A method for improving particle residue in a degumming chamber

Abstract

The present application provides a method for improving the residual particles in the degumming chamber, comprising: step S1, heating the chamber; step S2, softening the polymer in the chamber with water vapor; step S3, applying high pressure to the chamber, introducing nitrogen and oxygen, and removing the polymer on the side wall of the chamber; step S4, repeating step S3 to enhance the removal ability; step S5, applying low pressure to the chamber, introducing nitrogen and oxygen, and taking away the polymer; step S6, repeating step S5 to enhance the removal ability; step S7, closing the valve controlling the chamber pressure, applying high pressure to the chamber, bombarding the valve with nitrogen, and breaking up the polymer at the valve; step S8, opening the valve controlling the chamber pressure, applying low pressure to the chamber, and taking away the polymer with nitrogen. Through steps S4 and S6, the cleaning effect of the polymer accumulated on the side wall of the chamber can be enhanced; through steps S7 and S8, the polymer accumulated at the valve can be effectively removed.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a method for improving particle residue in a degumming chamber. Background Art

[0002] The Lam 2300Versys series is the main machine launched by LAM for polysilicon and metal etching. It is an important process machine for wafer processing. Among them, the Lam Versys Metal model is mostly used for aluminum etching processes, such as etching aluminum pads.

[0003] In the process of etching aluminum, the thickness of aluminum formed by the deposition process is usually 8000-25000 angstroms. When the LamVersys Metal model is used for the process of etching aluminum for power MOS devices, the thickness of aluminum is usually 40000-50000 angstroms. The thickness of the photoresist formed before etching aluminum is usually 40000-50000 angstroms. The amount of polymer produced during the etching process increases, which puts higher requirements on the ability to remove the polymer produced during the etching process and the residual photoresist particles in the strip chamber. The existing cleaning process makes it difficult to completely clean the strip chamber, resulting in an increase in residual polymer and photoresist particles, which seriously affects the operation time and efficiency of the machine. Summary of the invention

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present application is to provide a method for improving the particle residue in the degumming chamber, so as to solve the problem that it is difficult to completely clean the degumming chamber in the prior art, resulting in serious residue of polymer and photoresist particles.

[0005] To achieve the above objectives and other related objectives, the present application provides a method for improving the particle residue in a degumming chamber, comprising:

[0006] Step S1, heating the chamber;

[0007] Step S2, softening the polymer in the chamber with water vapor;

[0008] Step S3, applying high pressure to the chamber, introducing nitrogen and oxygen, and removing polymers accumulated on the side walls of the chamber;

[0009] Step S4, repeating step S3 to enhance the ability to remove the polymer accumulated on the side wall of the chamber;

[0010] Step S5, applying low pressure to the chamber, introducing nitrogen and oxygen to take away the polymer removed from the side wall of the chamber;

[0011] Step S6, repeating step S5 to enhance the removal capability of the polymer removed from the side wall of the chamber;

[0012] Step S7, closing the valve controlling the chamber pressure, applying high pressure to the chamber, and bombarding the valve with nitrogen to break up the polymer accumulated at the valve;

[0013] Step S8, opening the valve for controlling the chamber pressure, applying low pressure to the chamber, and taking away the polymer removed from the valve with nitrogen.

[0014] Preferably, in step S1, the temperature of the chamber is raised to 290°C-310°C.

[0015] Preferably, in step S2, the steam softening treatment time is 45s-55s.

[0016] Preferably, in step S3, the pressure applied to the chamber is 1500mTorr-2500mTorr, the flow rate of nitrogen is 350sccm-450sccm, the flow rate of oxygen is 3500sccm-4500sccm, and the processing time is 55s-65s.

[0017] Preferably, in step S5, the pressure applied to the chamber is 700mTorr-800mTorr, the flow rate of nitrogen is 350sccm-450sccm, the flow rate of oxygen is 3500sccm-4500sccm, and the processing time is 55s-65s.

[0018] Preferably, in step S7, the pressure applied to the chamber is 4500mTorr-5500mTorr, the flow rate of nitrogen is 850sccm-950sccm, and the processing time is 35s-45s.

[0019] Preferably, in step S8, the pressure applied to the chamber is 150 mTorr-250 mTorr, the flow rate of nitrogen is 850 sccm-950 sccm, and the processing time is 35 s-45 s.

[0020] Preferably, the debonding chamber is located on the etching machine.

[0021] Preferably, the etching machine is used for a process of etching aluminum.

[0022] Preferably, the process of etching aluminum is a back-end process of a power MOS device.

[0023] As described above, the method for improving the residual particles in the glue removal chamber provided in the present application has the following beneficial effects: through steps S4 and S6, the cleaning effect of the polymer accumulated on the side wall of the chamber can be enhanced; through steps S7 and S8, the polymer accumulated at the valve can be effectively removed. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0025] Figure 1 A schematic cross-sectional view of the debonding chamber of the Lam Versys Metal machine is shown;

[0026] Figure 2 A flow chart showing a method for improving particle residue in a degumming chamber provided by an embodiment of the present application. DETAILED DESCRIPTION

[0027] The following describes the implementation of the present application through specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. The present application can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0028] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in this application. Obviously, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0029] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating directions or positional relationships, are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", and "third" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0030] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, it can also be the internal connection of two components, it can be a wireless connection, or it can be a wired connection. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0031] In addition, the technical features involved in the different embodiments of the present application described below can be combined with each other as long as they do not conflict with each other.

[0032] See also Figure 1 , which shows a schematic cross-sectional structure of the degumming chamber of the Lam Versys Metal model.

[0033] like Figure 1 As shown, polymer accumulation is most likely to occur on the side walls of the chamber and at the valve that controls the chamber pressure, forming a particle source, resulting in a high number of particles in the chamber.

[0034] When cleaning a debonding chamber in the prior art, the chamber is first heated; then, the polymer in the chamber is softened with water vapor; then, high pressure is applied to the chamber, nitrogen and oxygen are introduced, and the polymer accumulated on the side wall of the chamber is removed; finally, low pressure is applied to the chamber, nitrogen and oxygen are introduced, and the polymer removed from the side wall of the chamber is taken away.

[0035] The cleaning process is basically unable to remove the polymer deposited on the valve controlling the chamber pressure, and the removal effect of the polymer deposited on the side wall of the chamber is also unsatisfactory.

[0036] In order to solve the above problems, the present application provides a method for improving the particle residue in the degumming chamber.

[0037] See also Figure 2 , which shows a flow chart of a method for improving particle residue in a degumming chamber provided by an embodiment of the present application.

[0038] like Figure 2 As shown, the method for improving the particle residue in the degumming chamber provided by the embodiment of the present application includes the following steps:

[0039] Step S1, heating the chamber;

[0040] Step S2, softening the polymer in the chamber with water vapor;

[0041] Step S3, applying high pressure to the chamber, introducing nitrogen and oxygen, and removing polymers accumulated on the side walls of the chamber;

[0042] Step S4, repeating step S3 to enhance the ability to remove the polymer accumulated on the side wall of the chamber;

[0043] Step S5, applying low pressure to the chamber, introducing nitrogen and oxygen to take away the polymer removed from the side wall of the chamber;

[0044] Step S6, repeating step S5 to enhance the removal capability of the polymer removed from the side wall of the chamber;

[0045] Step S7, closing the valve controlling the chamber pressure, applying high pressure to the chamber, and bombarding the valve with nitrogen to break up the polymer accumulated at the valve;

[0046] Step S8, opening the valve for controlling the chamber pressure, applying low pressure to the chamber, and taking away the polymer removed from the valve with nitrogen.

[0047] In step S1, the temperature of the chamber is raised to 290°C-310°C, preferably 300°C.

[0048] In step S2, the treatment time of water vapor softening is 45s-55s, preferably 50s.

[0049] In step S3, the pressure applied to the chamber is 1500mTorr-2500mTorr, preferably 2000mTorr, the flow rate of nitrogen is 350sccm-450sccm, preferably 400sccm, the flow rate of oxygen is 3500sccm-4500sccm, preferably 4000sccm, the flow ratio of nitrogen to oxygen is 1:10, and the processing time is 55s-65s, preferably 60s.

[0050] In step S5, the pressure applied to the chamber is 700mTorr-800mTorr, preferably 750mTorr, the flow rate of nitrogen is 350sccm-450sccm, preferably 400sccm, the flow rate of oxygen is 3500sccm-4500sccm, preferably 4000sccm, the flow ratio of nitrogen to oxygen is 1:10, and the processing time is 55s-65s, preferably 60s.

[0051] In step S7, the pressure applied to the chamber is 4500mTorr-5500mTorr, preferably 5000mTorr, the flow rate of nitrogen is 850sccm-950sccm, preferably 900sccm, and the processing time is 35s-45s, preferably 40s.

[0052] In step S8, the pressure applied to the chamber is 150 mTorr-250 mTorr, preferably 200 mTorr, the flow rate of nitrogen is 850 sccm-950 sccm, preferably 900 sccm, and the processing time is 35 s-45 s, preferably 40 s.

[0053] Through step S4 and step S6, the cleaning effect of the polymer deposited on the side wall of the chamber can be enhanced; through step S7 and step S8, the polymer deposited at the valve can be effectively removed.

[0054] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present application in a schematic manner. Therefore, the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0055] In summary, the method for improving the residual particles in the degumming chamber provided by the present application can effectively remove the polymer accumulated in the degumming chamber of the Lam Versys Metal machine. Therefore, the present application effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value. At the same time, the method for improving the residual particles in the degumming chamber provided by the present application is also applicable to the removal of polymers in the degumming chambers of other models of etching machines launched by LAM.

[0056] The above embodiments are merely illustrative of the principles and effects of the present application and are not intended to limit the present application. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed by the present invention shall still be covered by the claims of the present application.

Claims

1. A method for improving particle residue in a degumming chamber, characterized in that: The method comprises: Step S1, heating the chamber; Step S2, softening the polymer in the chamber with water vapor; Step S3, applying a high pressure of 1500mTorr-2500mTorr to the chamber, introducing nitrogen and oxygen to remove the polymer accumulated on the side wall of the chamber; Step S4, repeating step S3 to enhance the ability to remove the polymer accumulated on the side wall of the chamber; Step S5, applying a low pressure of 700 mTorr-800 mTorr to the chamber, introducing nitrogen and oxygen to take away the polymer removed from the side wall of the chamber; Step S6, repeating the step S5 to enhance the removal capability of the polymer removed from the side wall of the chamber; Step S7, closing the valve controlling the chamber pressure, applying a high pressure of 4500mTorr-5500mTorr to the chamber, and bombarding the valve with nitrogen to break up the polymer accumulated at the valve; Step S8, opening the valve for controlling the chamber pressure, applying a low pressure of 150 mTorr-250 mTorr to the chamber, and taking away the polymer removed from the valve with nitrogen.

2. The method according to claim 1, characterized in that In the step S1, the temperature of the chamber is raised to 290°C-310°C.

3. The method according to claim 1, characterized in that In the step S2, the steam softening treatment time is 45s-55s.

4. The method according to claim 1, characterized in that: In step S3, the flow rate of the nitrogen gas is 350 sccm-450 sccm, the flow rate of the oxygen gas is 3500 sccm-4500 sccm, and the processing time is 55 s-65.

5. The method according to claim 1, characterized in that In the step S5, the flow rate of the nitrogen gas is 350 sccm-450 sccm, the flow rate of the oxygen gas is 3500 sccm-4500 sccm, and the processing time is 55 s-65 s.

6. The method according to claim 1, characterized in that In the step S7, the flow rate of the nitrogen gas is 850 sccm-950 sccm, and the processing time is 35 s-45 s.

7. The method according to claim 1, characterized in that In the step S8, the flow rate of the nitrogen gas is 850 sccm-950 sccm, and the processing time is 35 s-45 s.

8. The method according to claim 1, characterized in that: The debonding chamber is located on the etching machine platform.

9. The method according to claim 8, characterized in that The etching machine is used for the process of etching aluminum.

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