A method for preparing a patterned thermal radiation control device
By using electron beam evaporation technology to deposit V2O5 thin films and prepare polyaniline films on gold-plated/nylon 66 substrates, the problem that traditional methods are difficult to prepare patterned thermal radiation control devices is solved, and efficient infrared control performance and electrical performance are improved, making it suitable for commercial production.
Patent Information
- Application Number
- CN202211493280.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-11-25
- Publication Date
- 2025-09-16
- Estimated Expiration
- 2042-11-25
AI Technical Summary
Traditional electrochemical methods make it difficult to prepare patterned thermal radiation control devices, and V2O5 has poor bonding with the substrate, affecting the infrared thermal radiation control performance and electrical properties.
V2O5 thin films were deposited on gold-plated/nylon 66 substrates using electron beam evaporation technology, and polyaniline films were prepared by in situ oxidative polymerization, avoiding the use of binders. Selective deposition and thickness control of V2O5 were achieved through electron beam evaporation to prepare polyaniline films with different thermal radiation properties.
The rapid preparation of polyaniline films was achieved, the bonding strength between the oxidant layer and the substrate was improved, the process was simplified, suitable for commercial production, and patterned devices with different thermal radiation characteristics in different areas were obtained, which have the ability to encode information.
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Figure CN115857240B_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a method for preparing a thermal radiation regulating device. Background Art
[0002] Electrochromism refers to the phenomenon in which a material undergoes a reversible change in its optical properties under the influence of an applied voltage. The application of electrochromism has expanded from the visible light domain to the infrared domain, primarily in the regulation of thermal radiation. Among electrochromic materials, conductive polymers exhibit excellent processing properties, rich color variations, and rapid response speeds, attracting extensive research. Among these, polyaniline, as an electrochromic material, possesses excellent electrical, electrochemical, and optical properties, and holds broad application prospects in the field.
[0003] Polyaniline (PAI) films, used as electrochromic layers, are typically prepared via electrochemical methods, which offer the advantage of synthesizing high-quality PAI films in situ directly on conductive substrates. However, this method struggles to achieve the convenient and rapid deposition of PAI patterns with diverse thermal radiation properties, limiting its further application. In this context, chemical oxidation is the most suitable method for preparing PAI patterns with diverse thermal radiation properties. The typical process of this method involves immersing the substrate in a polymerization solution containing an oxidant and monomers. However, this method is non-selective and inefficient because polymerization occurs simultaneously in the bulk phase and on the substrate, lacking regioselectivity on the substrate.
[0004] In order to confine polyaniline to the surface of the substrate for oxidative polymerization, it is first necessary to fix the oxidant on the substrate. Currently commonly used oxidants are ferric chloride (FeCl3), ammonium persulfate (APS) and V2O5. Among them, V2O5 is an oxidant with a unique layered structure. Due to its excellent solution processability and film-forming ability, it has been widely studied and is considered to be a very promising oxidant. According to current literature reports, Chen et al. used indium tin oxide (ITO) as a substrate, coated a V2O5 hydrosol as an oxidant layer, and obtained a polyaniline film by in situ oxidative polymerization in an acid solution of aniline monomer (R.Chen, LPZhang, YLZhou, ZCRen, YYZhang, B.Guo, X.Xing, GOOdunmbaku, Y.Li, K.Sun, In-situ synthesis of large-area PANI films via sequential solutionpolymerization technique for electrochromic applications, 8 (2021) 100072.). However, the V2O5 hydrosol obtained by this method has poor bonding strength with the substrate, and requires pre-coating of water-based polyurethane as an adhesive on the substrate, which is bound to affect the infrared thermal radiation regulation performance and electrical properties of the material. Summary of the Invention
[0005] The purpose of the present invention is to solve the problems of difficulty in preparing patterned thermal radiation control devices and poor infrared thermal radiation control performance and electrical performance by traditional electrochemical methods, and to provide a method for preparing patterned thermal radiation control devices.
[0006] A method for preparing a patterned thermal radiation control device is completed by the following steps:
[0007] 1. Preparation of gold-plated / nylon 66 substrate:
[0008] Gold particles were thermally evaporated on a nylon 66 substrate under vacuum conditions to obtain a gold-plated / nylon 66 substrate;
[0009] 2. Electron beam evaporation V2O5 thin film:
[0010] Depositing a patterned V2O5 film on the gold-plated / nylon 66 substrate described in step 1 using V2O5 particles by electron beam evaporation to obtain a V2O5 film / gold-plated / nylon 66 substrate;
[0011] 3. Preparation of polymerization solution:
[0012] 1. Prepare an aqueous solution of camphorsulfonic acid;
[0013] ②, adding the distilled aniline to the aqueous solution of camphorsulfonic acid described in step 3①, stirring until mixed uniformly to obtain a mixed solution;
[0014] 4. Preparation of polyaniline film by in-situ oxidation:
[0015] ①, immersing the V2O5 film / gold-plated / nylon 66 substrate described in step 2 into the mixed solution described in step 3, and then reacting at room temperature to obtain a polyaniline film;
[0016] ②, immersing the polyaniline film described in step 4① in dilute hydrochloric acid, reacting for a period of time to eliminate unreacted aniline monomer and residual V2O5, and then drying in an oven to obtain a cleaned polyaniline film;
[0017] 5. Preparation of electrolyte film:
[0018] ① Dissolve lithium perchlorate in 1,2-propylene glycol carbonate to obtain PC-LiClO4 electrolyte solution;
[0019] ②, immersing the PVDF-HFP film in the PC-LiClO4 electrolyte solution described in step 5①, reacting for a period of time to obtain an electrolyte film adsorbing PC-LiClO4;
[0020] 6. Preparation of polyaniline devices:
[0021] The PE film, the cleaned polyaniline film described in step 4②, the electrolyte film adsorbed with PC-LiClO4 described in step 5, and the PET film are hot-pressed and packaged in the order of PE film / cleaned polyaniline film / electrolyte film adsorbed with PC-LiClO4 / cleaned polyaniline film / PET film to obtain a patterned thermal radiation control device.
[0022] Principle of the present invention:
[0023] To achieve the goal of preparing a polyaniline film with excellent infrared tuning properties and overcome the challenge of constructing integrated devices with multiple thermal radiation properties, the present invention introduces electron beam evaporation technology to deposit a vanadium (V2O5) film. The V2O5 film is then used as an oxidant to drive the in-situ polymerization of the polyaniline film. Unlike traditional methods for preparing V2O5 films (blade coating and spin coating), the electron beam evaporation technology proposed in the present invention can achieve selective deposition of V2O5 and precise control of thickness, thereby obtaining a polyaniline film with different thermal radiation properties in different regions. More importantly, a patterned device is constructed based on the above-mentioned polyaniline film. At the same time, the patterns with multiple thermal radiation properties are captured using an infrared thermal imager, demonstrating excellent information encoding capabilities.
[0024] Advantages of the present invention:
[0025] First, the present invention uses V2O5 as an oxidant in conjunction with electron beam evaporation to deposit V2O5 on a substrate, thereby achieving a closer bond between the oxidant layer and the substrate. Then, due to the layered structure of V2O5, aniline monomers are in situ etched layer by layer on its surface, thereby achieving rapid preparation of polyaniline films.
[0026] Second, the patterned thermal radiation control device prepared by the present invention does not require the use of additional adhesives, and the process is simple, which is conducive to the commercial large-scale production of polyaniline films;
[0027] 3. The present invention can obtain a polyaniline film with different thermal radiation properties in different areas. At the same time, a patterned device is constructed based on this polyaniline film, and patterns with various thermal radiation properties are captured using an infrared thermal imager, showing excellent information encoding capabilities.
[0028] The present invention can obtain a patterned thermal radiation control device. BRIEF DESCRIPTION OF THE DRAWINGS
[0029] Figure 1 This is an SEM image of the patterned V2O5 thin film obtained by electron beam evaporation in step 2 of Example 1;
[0030] Figure 2 This is a SEM image of the cleaned polyaniline film obtained in step 4 of Example 1;
[0031] Figure 3 This is a digital photo of the patterned polyaniline film obtained in step 2 of Example 1;
[0032] Figure 4 This is an infrared thermal image of the patterned thermal radiation control device obtained in step 6 of Example 1;
[0033] Figure 5 This is the infrared emissivity change curve of the patterned thermal radiation control device obtained in step 6 of Example 1, where 1 is the oxidized state and 2 is the reduced state;
[0034] Figure 6 This is a digital photo of the patterned polyaniline film obtained in step 2 of Example 2;
[0035] Figure 7 The infrared emissivity curves of the patterned polyaniline film obtained in step 2 of Example 2 are shown. In the figure, 1 represents the oxidized state, 2 represents the reduced state, (a) represents PANI 300 nm, (b) represents PANI 700 nm, and (c) represents PANI 900 nm.
[0036] Figure 8 This is an infrared thermal image of the patterned thermal radiation control device obtained in step six of Example 2. DETAILED DESCRIPTION
[0037] Specific embodiment 1: In this embodiment, a method for preparing a patterned thermal radiation control device is completed by the following steps:
[0038] 1. Preparation of gold-plated / nylon 66 substrate:
[0039] Gold particles were thermally evaporated on a nylon 66 substrate under vacuum conditions to obtain a gold-plated / nylon 66 substrate;
[0040] 2. Electron beam evaporation V2O5 thin film:
[0041] Depositing a patterned V2O5 film on the gold-plated / nylon 66 substrate described in step 1 using V2O5 particles by electron beam evaporation to obtain a V2O5 film / gold-plated / nylon 66 substrate;
[0042] 3. Preparation of polymerization solution:
[0043] 1. Prepare an aqueous solution of camphorsulfonic acid;
[0044] ②, adding the distilled aniline to the aqueous solution of camphorsulfonic acid described in step 3①, stirring until mixed uniformly to obtain a mixed solution;
[0045] 4. Preparation of polyaniline film by in-situ oxidation:
[0046] ①, immersing the V2O5 film / gold-plated / nylon 66 substrate described in step 2 into the mixed solution described in step 3, and then reacting at room temperature to obtain a polyaniline film;
[0047] ②, immersing the polyaniline film described in step 4① in dilute hydrochloric acid, reacting for a period of time to eliminate unreacted aniline monomer and residual V2O5, and then drying in an oven to obtain a cleaned polyaniline film;
[0048] 5. Preparation of electrolyte film:
[0049] ① Dissolve lithium perchlorate in 1,2-propylene glycol carbonate to obtain PC-LiClO4 electrolyte solution;
[0050] ②, immersing the PVDF-HFP film in the PC-LiClO4 electrolyte solution described in step 5①, reacting for a period of time to obtain an electrolyte film adsorbing PC-LiClO4;
[0051] 6. Preparation of polyaniline devices:
[0052] The PE film, the cleaned polyaniline film described in step 4②, the electrolyte film adsorbed with PC-LiClO4 described in step 5, and the PET film are hot-pressed and packaged in the order of PE film / cleaned polyaniline film / electrolyte film adsorbed with PC-LiClO4 / cleaned polyaniline film / PET film to obtain a patterned thermal radiation control device.
[0053] Specific embodiment 2: This embodiment differs from specific embodiment 1 in that the thickness of the nylon 66 substrate in step 1 is 0.095 mm, and the thickness of the gold film on the gold-plated / nylon 66 substrate is 200 nm to 350 nm. The other steps are the same as those in specific embodiment 1.
[0054] Specific embodiment 3: The difference between this embodiment and specific embodiment 1 or 2 is that the electron beam evaporation technology described in step 2 is to evacuate the chamber to a vacuum of less than 6×10 -4 Pa, and the substrate is kept rotating during the deposition process to ensure uniformity of thin film deposition. Other steps are the same as those in the first or second embodiment.
[0055] Specific embodiment 4: This embodiment differs from specific embodiments 1 to 3 in that the thickness of the patterned V2O5 film in step 2 is 900 nm, or a combination of 300 nm, 700 nm, and 900 nm; and the pattern of the patterned V2O5 film is a panda or checkerboard pattern. The remaining steps are the same as specific embodiments 1 to 3.
[0056] Specific embodiment 5: This embodiment differs from specific embodiments 1 to 4 in that the concentration of the aqueous solution of camphorsulfonic acid in step 3① is 0.1 mol / L. The other steps are the same as those of specific embodiments 1 to 4.
[0057] Specific embodiment 6: This embodiment differs from specific embodiments 1 to 5 in that the molar ratio of camphorsulfonic acid to aniline in the mixed solution in step 3② is 10:1. The other steps are the same as those in specific embodiments 1 to 5.
[0058] Specific embodiment 7: This embodiment differs from specific embodiments 1 to 6 in that the stirring speed in step 3 ② is 700 to 800 r / min and the stirring time is 30 to 60 min. The other steps are the same as those of specific embodiments 1 to 6.
[0059] Specific embodiment 8: This embodiment differs from specific embodiments 1 to 7 in that: the reaction time at room temperature in step 4 (1) is 24 hours; the reaction time in step 4 (2) is 30 minutes; the drying temperature in step 4 (2) is 60°C and the drying time is 30 minutes; and the concentration of dilute hydrochloric acid in step 4 (2) is 0.1 mol / L. Other steps are the same as specific embodiments 1 to 7.
[0060] Specific embodiment 9: This embodiment differs from specific embodiments 1 to 8 in that the concentration of the PC-LiClO4 electrolyte solution in step 5 (1) is 1 mol / L and the reaction time in step 5 (2) is 24 hours. The other steps are the same as specific embodiments 1 to 8.
[0061] Specific embodiment 10: This embodiment differs from specific embodiments 1 to 9 in that the thickness of the PE film described in step 6 is 0.023 mm; the thickness of the electrolyte film adsorbing PC-LiClO4 is 0.115 mm; and the thickness of the PET film is 0.078 mm. The other steps are the same as specific embodiments 1 to 9.
[0062] The following examples are used to verify the beneficial effects of the present invention:
[0063] Example 1: A method for preparing a patterned thermal radiation control device is completed by the following steps:
[0064] 1. Preparation of gold-plated / nylon 66 substrate:
[0065] Gold particles were thermally evaporated on a nylon 66 substrate under vacuum conditions to obtain a gold-plated / nylon 66 substrate;
[0066] The area of the nylon 66 substrate described in step 1 is 10×11 cm 2 ;
[0067] The thickness of the gold film on the gold-plated / nylon 66 substrate described in step 1 is 250 nm;
[0068] The thickness of the nylon 66 substrate described in step 1 is 0.095 mm;
[0069] 2. Electron beam evaporation V2O5 thin film:
[0070] Depositing a patterned V2O5 film on the gold-plated / nylon 66 substrate described in step 1 using V2O5 particles (purity of 99.99%) by electron beam evaporation to obtain a V2O5 film / gold-plated / nylon 66 substrate;
[0071] The electron beam evaporation technique described in step 2 is to evacuate the chamber to a vacuum of less than 6×10 -4Pa, and the substrate keeps rotating during the deposition process to ensure the uniformity of film deposition;
[0072] The thickness of the patterned V2O5 film in step 2 is 900 nm; the pattern of the patterned V2O5 film is a panda;
[0073] 3. Preparation of polymerization solution:
[0074] 1. Prepare an aqueous solution of camphorsulfonic acid;
[0075] The concentration of the aqueous solution of camphorsulfonic acid described in step 3① is 0.1 mol / L;
[0076] ②, adding the distilled aniline to the aqueous solution of camphorsulfonic acid described in step 3①, stirring until mixed uniformly to obtain a mixed solution;
[0077] The stirring speed in step 3② is 800 r / min and the stirring time is 30 min;
[0078] The molar ratio of camphorsulfonic acid to aniline in the mixed solution described in step 3② is 10:1;
[0079] 4. Preparation of polyaniline film by in-situ oxidation:
[0080] ① Immerse the V2O5 film / gold-plated / nylon 66 substrate described in step 2 in the mixed solution described in step 3, and then react at room temperature for 24 hours to obtain a polyaniline film;
[0081] ②, immersing the polyaniline film described in step 4① in dilute hydrochloric acid and reacting for 30 minutes to eliminate unreacted aniline monomer and residual V2O5, and then drying in an oven at a temperature of 60°C for 30 minutes to obtain a cleaned polyaniline film;
[0082] The concentration of the dilute hydrochloric acid described in step 4② is 0.1 mol / L;
[0083] 5. Preparation of electrolyte film:
[0084] ① Dissolve 1,2-propylene carbonate (PC) in lithium perchlorate (LiClO4) to obtain a PC-LiClO4 electrolyte solution;
[0085] The concentration of the PC-LiClO4 electrolyte solution described in step 5① is 1 mol / L;
[0086] ②, immerse the PVDF-HFP film in the PC-LiClO4 electrolyte solution described in step 5①, and react for 24 hours to obtain an electrolyte film adsorbing PC-LiClO4;
[0087] 6. Preparation of polyaniline devices:
[0088] The PE film, the cleaned polyaniline film described in step 4②, the electrolyte film adsorbed with PC-LiClO4 described in step 5, and the PET film are hot-pressed and packaged in the order of PE film / cleaned polyaniline film / electrolyte film adsorbed with PC-LiClO4 / cleaned polyaniline film / PET film to obtain a patterned thermal radiation control device;
[0089] The thickness of the PE film described in step six is 0.023 mm; the thickness of the electrolyte film adsorbing PC-LiClO4 is 0.115 mm; and the thickness of the PET film is 0.078 mm.
[0090] Figure 1 This is an SEM image of the patterned V2O5 thin film obtained by electron beam evaporation in step 2 of Example 1;
[0091] from Figure 1 It can be seen that there are incompletely filled pores on the surface of the V2O5 film.
[0092] Figure 2 This is a SEM image of the cleaned polyaniline film obtained in step 4 of Example 1;
[0093] from Figure 2 It can be seen that the surface of the polyaniline film is smooth and flat.
[0094] Figure 3 This is a digital photo of the patterned polyaniline film obtained in step 2 of Example 1;
[0095] from Figure 3 It can be seen that the portion of the gold-plated / nylon 66 substrate covered with polyaniline is blue-green and exhibits a panda pattern of polyaniline.
[0096] Figure 4 This is an infrared thermal image of the patterned thermal radiation control device obtained in step 6 of Example 1;
[0097] from Figure 4 It can be seen that the pattern is invisible when the device is in the reduced state, and the panda pattern is visible when it is in the oxidized state.
[0098] Figure 5 This is the infrared emissivity change curve of the patterned thermal radiation control device obtained in step 6 of Example 1, where 1 is the oxidized state and 2 is the reduced state;
[0099] from Figure 5 It can be seen that the infrared emissivity of the patterned thermal radiation control device in the infrared band (2.5-25μm) changes to 0.42.
[0100] Example 2: A method for preparing a patterned thermal radiation control device is completed by the following steps:
[0101] 1. Preparation of gold-plated / nylon 66 substrate:
[0102] Gold particles were thermally evaporated on a nylon 66 substrate under vacuum conditions to obtain a gold-plated / nylon 66 substrate;
[0103] The area of the nylon 66 substrate described in step 1 is 10×11 cm 2 ;
[0104] The thickness of the gold film on the gold-plated / nylon 66 substrate described in step 1 is 250 nm;
[0105] The thickness of the nylon 66 substrate described in step 1 is 0.095 mm;
[0106] 2. Electron beam evaporation V2O5 thin film:
[0107] Depositing a patterned V2O5 film on the gold-plated / nylon 66 substrate described in step 1 using V2O5 particles (purity of 99.99%) by electron beam evaporation to obtain a V2O5 film / gold-plated / nylon 66 substrate;
[0108] The electron beam evaporation technique described in step 2 is to evacuate the chamber to a vacuum of less than 6×10 -4 Pa, and the substrate keeps rotating during the deposition process to ensure the uniformity of film deposition;
[0109] The thickness of the patterned V2O5 film in step 2 includes 300nm, 700nm and 900nm; the pattern of the patterned V2O5 film is a checkerboard pattern;
[0110] 3. Preparation of polymerization solution:
[0111] 1. Prepare an aqueous solution of camphorsulfonic acid;
[0112] The concentration of the aqueous solution of camphorsulfonic acid described in step 3① is 0.1 mol / L;
[0113] ②, adding the distilled aniline to the aqueous solution of camphorsulfonic acid described in step 3①, stirring until mixed uniformly to obtain a mixed solution;
[0114] The stirring speed in step 3② is 800 r / min and the stirring time is 30 min;
[0115] The molar ratio of camphorsulfonic acid to aniline in the mixed solution described in step 3② is 10:1;
[0116] 4. Preparation of polyaniline film by in-situ oxidation:
[0117] ① Immerse the V2O5 film / gold-plated / nylon 66 substrate described in step 2 in the mixed solution described in step 3, and then react at room temperature for 24 hours to obtain a polyaniline film;
[0118] ②, immersing the polyaniline film described in step 4① in dilute hydrochloric acid and reacting for 30 minutes to eliminate unreacted aniline monomer and residual V2O5, and then drying in an oven at a temperature of 60°C for 30 minutes to obtain a cleaned polyaniline film;
[0119] The concentration of the dilute hydrochloric acid described in step 4② is 0.1 mol / L;
[0120] 5. Preparation of electrolyte film:
[0121] ①, dissolving lithium perchlorate (LiClO4) in 1,2-propylene glycol carbonate (PC) to obtain a PC-LiClO4 electrolyte solution;
[0122] The concentration of the PC-LiClO4 electrolyte solution described in step 5① is 1 mol / L;
[0123] ②, immerse the PVDF-HFP film in the PC-LiClO4 electrolyte solution described in step 5①, and react for 24 hours to obtain an electrolyte film adsorbing PC-LiClO4;
[0124] 6. Preparation of polyaniline devices:
[0125] The PE film, the cleaned polyaniline film described in step 4②, the electrolyte film adsorbed with PC-LiClO4 described in step 5, and the PET film are hot-pressed and packaged in the order of PE film / cleaned polyaniline film / electrolyte film adsorbed with PC-LiClO4 / cleaned polyaniline film / PET film to obtain a patterned thermal radiation control device;
[0126] The thickness of the PE film described in step six is 0.023 mm; the thickness of the electrolyte film adsorbing PC-LiClO4 is 0.115 mm; and the thickness of the PET film is 0.078 mm.
[0127] Figure 6 This is a digital photo of the patterned polyaniline film obtained in step 2 of Example 2;
[0128] from Figure 6 It can be seen that the part covered with polyaniline on the gold-plated / nylon 66 substrate is blue-green and shows a checkerboard pattern of polyaniline, and the integration of three different thicknesses of polyaniline is achieved at the same time;
[0129] Figure 7The infrared emissivity curves of the patterned polyaniline film obtained in step 2 of Example 2 are shown. In the figure, 1 represents the oxidized state, 2 represents the reduced state, (a) represents PANI 300 nm, (b) represents PANI 700 nm, and (c) represents PANI 900 nm.
[0130] from Figure 7 It can be seen that the infrared emissivity of polyaniline films with different thicknesses in the infrared band (2.5-25 μm) varies by 0.10, 0.19 and 0.40 respectively.
[0131] Figure 8 This is an infrared thermal image of the patterned thermal radiation control device obtained in step six of Example 2.
[0132] from Figure 8 It can be seen that the pattern is invisible when the device is in the reduced state, but the checkerboard pattern is visible when it is in the oxidized state.
Claims
1. A method for preparing a patterned thermal radiation control device, characterized in that A method for preparing a patterned thermal radiation control device is completed by the following steps:
1. Preparation of gold-plated / nylon 66 substrate: Gold particles were thermally evaporated on a nylon 66 substrate under vacuum conditions to obtain a gold-plated / nylon 66 substrate; 2. Electron beam evaporation V2O5 thin film: Depositing a patterned V2O5 film on the gold-plated / nylon 66 substrate described in step 1 using V2O5 particles by electron beam evaporation to obtain a V2O5 film / gold-plated / nylon 66 substrate; 3. Preparation of polymerization solution:
1. Prepare an aqueous solution of camphorsulfonic acid; ②, adding the distilled aniline to the aqueous solution of camphorsulfonic acid described in step 3①, stirring until mixed uniformly to obtain a mixed solution; 4. Preparation of polyaniline film by in-situ oxidation: ①, immersing the V2O5 film / gold-plated / nylon 66 substrate described in step 2 into the mixed solution described in step 3, and then reacting at room temperature to obtain a polyaniline film; ②, immersing the polyaniline film described in step 4① in dilute hydrochloric acid, reacting for a period of time to eliminate unreacted aniline monomer and residual V2O5, and then drying in an oven to obtain a cleaned polyaniline film; 5. Preparation of electrolyte film: ① Dissolve lithium perchlorate in 1,2-propylene glycol carbonate to obtain PC-LiClO4 electrolyte solution; ②, immersing the PVDF-HFP film in the PC-LiClO4 electrolyte solution described in step 5①, reacting for a period of time to obtain an electrolyte film adsorbing PC-LiClO4; 6. Preparation of polyaniline devices: The PE film, the cleaned polyaniline film described in step 4②, the electrolyte film adsorbed with PC-LiClO4 described in step 5, and the PET film are hot-pressed and packaged in the order of PE film / cleaned polyaniline film / electrolyte film adsorbed with PC-LiClO4 / cleaned polyaniline film / PET film to obtain a patterned thermal radiation control device.
2. The method for preparing a patterned thermal radiation control device according to claim 1, characterized in that The thickness of the nylon 66 substrate described in step 1 is 0.095 mm; the thickness of the gold film on the gold-plated / nylon 66 substrate is 200 nm to 350 nm.
3. The method for preparing a patterned thermal radiation control device according to claim 1, characterized in that The electron beam evaporation technique described in step 2 is to evacuate the chamber to a vacuum of less than 6×10 -4 Pa, and the substrate keeps rotating during the deposition process to ensure the uniformity of film deposition.
4. The method for preparing a patterned thermal radiation control device according to claim 1, characterized in that The thickness of the patterned V2O5 film in step 2 is 900 nm or includes 300 nm, 700 nm and 900 nm; the pattern of the patterned V2O5 film is a panda or a checkerboard.
5. The method for preparing a patterned thermal radiation control device according to claim 1, characterized in that The concentration of the aqueous solution of camphorsulfonic acid described in step 3① is 0.1 mol / L.
6. The method for preparing a patterned thermal radiation control device according to claim 1, characterized in that The molar ratio of camphorsulfonic acid to aniline in the mixed solution described in step 3② is 10:
1.
7. The method for preparing a patterned thermal radiation control device according to claim 1, characterized in that The stirring speed described in step 3② is 700-800 r / min, and the stirring time is 30-60 min.
8. The method for preparing a patterned thermal radiation control device according to claim 1, characterized in that The reaction time at room temperature in step 4 ① is 24 h; the reaction time in step 4 ② is 30 min; the drying temperature in step 4 ② is 60° C. and the drying time is 30 min; the concentration of dilute hydrochloric acid in step 4 ② is 0.1 mol / L.
9. The method for preparing a patterned thermal radiation control device according to claim 1, characterized in that The concentration of the PC-LiClO4 electrolyte solution in step 5 ① is 1 mol / L; the reaction time in step 5 ② is 24 h.
10. The method for preparing a patterned thermal radiation control device according to claim 1, characterized in that The thickness of the PE film described in step six is 0.023 mm; the thickness of the electrolyte film adsorbing PC-LiClO4 is 0.115 mm, and the thickness of the PET film is 0.078 mm.