Tray and epitaxial growth reaction chamber for epitaxial growth

Abstract

The application provides a tray applied to epitaxial growth and an epitaxial growth reaction chamber. The tray is provided with a plurality of wafer bearing areas for placing wafers on the upper side of the tray, and the tray is internally provided with a gas guiding channel; the tray comprises a coaxially arranged central area and a peripheral area, one end of the gas guiding channel extends to the central area of the upper side of the tray, and the other end of the gas guiding channel extends to the outer side of the tray. In the epitaxial growth reaction process, the tray can utilize the pressure difference between the upper side of the central area of the tray and the outer side of the tray, and utilize the Venturi principle, so that part of the gas on the upper side of the tray flows to the outer side of the tray through the gas guiding channel, thereby increasing the gas flow speed of the central area above the tray, reducing the residence of the gas flow of the central area above the tray, thereby inhibiting the convection and vortex phenomena of the central area above the tray due to the rotation of the tray and the thermal buoyancy, improving the utilization efficiency of the gas source, and improving the epitaxial growth uniformity of the wafer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor deposition technology, and more particularly to a tray and an epitaxial growth reaction chamber used for epitaxial growth. Background Technology

[0002] Epitaxial growth is a process in which reactive gases are delivered onto a high-temperature wafer, and a thin film is grown on the wafer through a chemical reaction.

[0003] Figure 28 This is a reaction chamber 600 of an existing epitaxial growth apparatus. Several substrates W are placed on a wafer tray 400 within the reaction chamber 600. An air inlet device 500 is positioned opposite the wafer tray 400, and an exhaust device 800 is located below the reaction chamber 600. During epitaxial growth, the reaction gas is transported along path 900 from above the reaction chamber 600 to the surface of the wafer tray 400, then along the surface of the wafer tray 400 to its outer edge (along path 902), and finally discharged from the interior of the reaction chamber 600 by the exhaust device 800 along path 904. During epitaxial growth, the wafer tray 400 typically rotates. The linear velocity of the tray surface is inversely proportional to its diameter, decreasing towards the center and reaching zero at the center point. The rotation of the tray affects the airflow above it. Due to the low linear velocity in the central region of the tray, the horizontal airflow velocity above the center is very low or even zero, easily forming a gas stagnation zone above the center of the tray. Under certain conditions, this can lead to vortices, such as... Figure 29 As shown.

[0004] When the tray temperature rises, the gas above the tray that is closer to the tray is preheated than the gas further above. This gas will move upward under the action of thermal buoyancy, generating convection, which will intensify the formation of eddies, reduce the utilization efficiency of the gas source in the central area above the tray, and affect the uniformity of epitaxial growth of the wafer on the tray.

[0005] To address the aforementioned issues, common methods include adding a purge gas outlet in the central area of ​​the air intake device to suppress vortex generation in the central area above the tray through airflow adjustment, or adjusting the overall flow field within the reaction chamber. However, both methods require adjusting the airflow to suppress vortex generation in the central area, which is time-consuming and labor-intensive, and also reduces the process debugging window. Summary of the Invention

[0006] The purpose of this invention is to provide a tray and an epitaxial growth reaction chamber for use in epitaxial growth, so as to suppress convection and eddy current phenomena in the central area above the tray due to tray rotation and thermal buoyancy, and improve the problems of low gas source utilization and low uniformity of wafer epitaxial growth in the reaction chamber of the prior art.

[0007] To achieve the above objectives, the present invention provides a tray for epitaxial growth, wherein the upper side of the tray is provided with multiple wafer-bearing areas for placing wafers, and the interior of the tray is provided with air guiding channels.

[0008] The tray includes a central region and a peripheral region coaxially arranged, the wafer carrier area is located in the peripheral region, and the central region is a non-wafer carrier area;

[0009] One end of the air guide channel extends to the central area on the upper side of the tray, and the other end of the air guide channel extends to the outer side of the tray. The air guide channel is used to connect the space on the upper side of the tray and the space on the outer side of the tray.

[0010] In one feasible embodiment, the air guide channel includes at least one first section and at least one second section; the first section is located in the central region of the tray and communicates with the space on the upper side of the tray, the second section communicates with the space on the outer side of the tray, the first section is arranged along the axial direction of the tray, and the second section is arranged along the radial direction of the tray.

[0011] In one feasible embodiment, the distance between the end of the second segment near the outer side of the tray and the upper side of the tray is greater than or equal to the distance between the end of the second segment near the center region of the tray and the upper side of the tray.

[0012] In one feasible embodiment, the distance from each position on the second segment to the upper side of the tray gradually increases in the direction along the central region toward the outer side of the tray.

[0013] In one feasible embodiment, the second segment is mapped into an arc shape on the upper side of the tray, and the arrangement direction of the arc is opposite to the rotation direction of the tray during the epitaxial growth process.

[0014] In one feasible embodiment, a plurality of the wafer carrier areas are evenly arranged on the circumference of the tray, and each of the wafer carrier areas is provided with at least one receiving groove for placing wafers.

[0015] In one feasible embodiment, the second segment is evenly distributed in a plurality on the circumference of the tray.

[0016] In one feasible embodiment, the second segment is disposed between two adjacent wafer carrier regions; or, the second segment is disposed on the lower side of the receiving groove; or, at least one of a plurality of second segments is disposed on the lower side of the receiving groove, and at least one of a plurality of second segments is disposed between two adjacent wafer carrier regions.

[0017] In one feasible embodiment, the central area of ​​the tray is provided with a plurality of tubular channels that are recessed downward from the upper side of the tray and do not penetrate the tray. Each of the tubular channels forms a first segment. The number of the tubular channels is the same as the number of the second segments. The tubular channels correspond one-to-one with the second segments and are connected.

[0018] In one feasible embodiment, the tubular channel and the second segment corresponding to the tubular channel are located in the same longitudinal section.

[0019] In one feasible embodiment, the plurality of tubular channels are evenly distributed or staggered around the central axis of the tray.

[0020] In one feasible embodiment, a first air guide is provided on the solid portion of the central region of the tray surrounded by the tubular channel, the size of the first air guide gradually decreasing from bottom to top.

[0021] In one feasible embodiment, the central region of the tray is provided with a hollow recess that is recessed downward from the upper side of the tray and does not penetrate the tray. The central axis of the hollow recess coincides with the central axis of the tray. The hollow recess is formed as the first segment and is connected to the second segment.

[0022] In one feasible embodiment, a second air guide is provided in the hollow recess, the outer diameter of the second air guide is smaller than the outer diameter of the hollow recess, and an annular channel between the hollow recess and the second air guide is formed as the first section, and the annular channel is connected to the second section.

[0023] In one feasible embodiment, the top end of the second air guide is flush with the upper side of the tray, or the top end of the second air guide protrudes from the upper side of the tray.

[0024] In one feasible embodiment, the second air guide includes a cylindrical portion and a conical portion, wherein the interface between the cylindrical portion and the conical portion is flush with or lower than the upper side of the tray.

[0025] In one feasible embodiment, the cylindrical portion and the tapered portion are integrally formed components or are separate components.

[0026] In one feasible embodiment, the size of the second air guide gradually decreases from bottom to top.

[0027] 0 In one possible embodiment, the central region of the tray is provided with a structure formed by the upper side of the tray.

[0028] A downward-facing, recessed annular portion that does not penetrate the tray has a central axis that coincides with the central axis of the tray. The annular portion is formed as the first segment and is connected to the second segment.

[0029] In one feasible embodiment, a third air guide is provided on the 5 solid portion of the central region surrounded by the annular recess on the tray, the size of the third air guide gradually decreasing from bottom to top.

[0030] The present invention also provides an epitaxial growth reaction chamber, including an air inlet device, a drive device, and the tray described in any of the above embodiments;

[0031] The tray is disposed in the reaction chamber and connected to the driving device. The driving device is used to drive the tray to rotate during the epitaxial growth process. The tray is used to place the wafer to be processed.

[0032] The air intake device is disposed opposite to the tray, and the air intake device is used to deliver gas source material for wafer processing into the reaction chamber during the epitaxial growth process;

[0033] Furthermore, during the epitaxial growth reaction, a portion of the gas in the central region of the reaction chamber moves to the outer side of the tray via the gas guide channel.

[0034] Compared with the prior art, the present invention has the following advantages:

[0035] This invention, from the perspective of airflow guidance, guides airflow by setting an air-guiding channel inside the tray, pointing from the center of the tray to the edge. One end of the air-guiding channel is located on the upper side of the tray near the center.

[0036] The other end is positioned on the outer side of the tray, so that the air guide channel connects the space on the upper five sides and the outer side of the tray. Therefore, during the epitaxial growth reaction, due to the rotation of the tray, it is possible to utilize...

[0037] The pressure difference between the upper side of the center area of ​​the tray and the outer side of the tray, and utilizing the Venturi principle, allows a portion of the gas on the upper side of the tray to flow to the outer side of the tray through the air guide channel. This increases the gas flow velocity in the center area above the tray, reduces the stagnation of airflow in the center area above the tray, and suppresses the flow of gas in the center area above the tray.

[0038] Due to the convection and eddy currents generated by the tray rotation and thermal buoyancy, the area with uniform gas source distribution (Z0 region) becomes larger, increasing the effective contact between the gas and the wafer, thereby improving the utilization efficiency of the gas source.

[0039] This improves the uniformity of wafer epitaxial growth. Furthermore, because the area with a more uniform gas source distribution is larger, more wafers can be arranged on the tray, increasing production capacity and reducing wafer fabrication costs. Attached Figure Description

[0040] Figures 1 to 19 This is a schematic diagram of the structure of the tray used for epitaxial growth in the first embodiment of the present invention;

[0041] Figure 20 This is a schematic diagram of the structure of the tray used for epitaxial growth in the second embodiment of the present invention;

[0042] Figure 21 This is a schematic diagram of the structure of the tray used for epitaxial growth in the third embodiment of the present invention;

[0043] Figure 22 and Figure 23 This is a schematic diagram of the structure of the tray used for epitaxial growth in the fourth embodiment of the present invention;

[0044] Figure 24 This is a schematic diagram of the structure of the tray used for epitaxial growth in the fifth embodiment of the present invention;

[0045] Figure 25 and Figure 26 This is a schematic diagram of the structure of the tray used for epitaxial growth in the sixth embodiment of the present invention;

[0046] Figure 27 This is a schematic cross-sectional view of the epitaxial growth reaction chamber in an embodiment of the present invention.

[0047] Figure 28 This is a schematic cross-sectional view of an epitaxial growth reaction chamber in the prior art.

[0048] Figure 29 This is a flow field simulation diagram of an epitaxial growth reaction chamber in the prior art.

[0049] Numbering on the map:

[0050] 1. Tray; 101. Central area; 102. Peripheral area; 103. Wafer carrying area; 104. Receiving slot;

[0051] 2. Air guide channel; 201. First section; 202. Second section; 203. Tubular channel; 204. Hollow recessed section; 205. Annular recessed section;

[0052] 3. First air guide component;

[0053] 4. Second air guide component; 401. Cylindrical section; 402. Conical section;

[0054] 5. Third air guide component;

[0055] 6. Air intake device;

[0056] 7. Drive unit;

[0057] 8. Reaction chamber. Detailed Implementation

[0058] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0059] To address the problems existing in the prior art, on one hand, embodiments of the present invention provide a tray for epitaxial growth, wherein the upper side of the tray is provided with multiple wafer-bearing areas for placing wafers, and the interior of the tray is provided with a gas guiding channel; the tray includes a central region and a peripheral region arranged coaxially, the wafer-bearing areas are located in the peripheral region, and the central region is a non-wafer-bearing area; one end of the gas guiding channel extends to the central region of the upper side of the tray, and the other end of the gas guiding channel extends to the outer side of the tray, the gas guiding channel being used to connect the space on the upper side of the tray and the space on the outer side of the tray.

[0060] The tray will now be described in detail with reference to Embodiments 1 to 6 and the accompanying drawings.

[0061] Example 1

[0062] refer to Figures 1 to 3 The tray 1 used for epitaxial growth has multiple wafer support areas 103 on its upper side for placing wafers, and a gas guide channel 2 is provided inside the tray 1. The tray 1 includes a central area 101 and a peripheral area 102. The wafer support areas 103 are located in the peripheral area 102, and the central area 101 is a non-wafer support area. One end of the gas guide channel 2 extends to the central area 101 on the upper side of the tray 1, and the other end of the gas guide channel 2 extends to the outer side of the tray 1. The gas guide channel 2 is used to connect the space on the upper side of the tray 1 and the space on the outer side of the tray 1.

[0063] In some specific embodiments, the tray 1 is configured as a disc and horizontally positioned, with a central region 101 and a peripheral region 102 coaxially arranged around the central axis of the tray 1, and the peripheral region 3 located outside the central region 101. The area on the upper side of the tray 1, excluding the central region 101, is the area for placing wafers; in other words, the area occupied by the wafers on the tray 1 does not cover the center of the tray 1. In some embodiments, the wafer carrying areas 103 are evenly distributed around the central axis of the tray 1, and the wafer carrying areas 103 are arranged in at least one circle around the circumference of the tray 1, then the area of ​​the central region 101 does not exceed the area of ​​the circle tangent to each wafer carrying area 103 at the central axis of the tray 1.

[0064] In some specific embodiments, such as Figure 4 , Figure 5 The air passage 2 includes at least a first section 201 and at least a second section 202; the first section 201 is located in the central region 101 of the tray 1 and communicates with the space on the upper side of the tray 1, and the second section 202 communicates with the space on the outer side of the tray 1. The first section 201 is arranged along the axial direction of the tray 1, and the second section 202 is arranged along the radial direction of the tray 1.

[0065] In some embodiments, refer to Figure 6 and Figure 7 The first segment 201 is provided on the tray 1, and the second segment 202 is provided as one or more, and the one or more second segments 202 are in communication with the first segment 201.

[0066] In some embodiments, refer to Figure 8 The first segment 201 is provided in multiple ways on the tray 1, and the second segment 202 is provided in multiple ways. The number of the first segment 201 is equal to the number of the second segment 202, and each first segment 201 and each second segment 202 are connected in a one-to-one correspondence.

[0067] In some embodiments, the distance between the end of the second segment 202 near the outer side of the tray 1 and the upper side of the tray 1 is greater than or equal to the distance between the end of the second segment 202 near the center region 101 of the tray 1 and the upper side of the tray 1.

[0068] In some specific embodiments, the second segment 202 extends horizontally outward from the tray 1.

[0069] In some specific embodiments, the second segment 202 extends obliquely outward from the tray 1, that is, the axis of the second segment 202 intersects the horizontal plane. In other words, since the tray 1 is horizontally positioned, the horizontal plane can also be referred to as the radial plane of the tray 1, that is, the second segment 202 is obliquely positioned relative to the tray 1.

[0070] In some specific embodiments, the distance between the end of the second segment 202 near the outer side of the tray 1 and the upper side of the tray 1 is greater than the distance between the end of the second segment 202 near the central region 101 of the tray 1 and the upper side of the tray 1. That is, the position of the second segment 202 near the central region 101 is relatively high, and the first segment 201 is located above the second segment 202. This facilitates the discharge of gas above the central region 101 of the tray 1 through the gas guide channel 2. (Refer to...) Figure 9 The second segment 202 is configured as a zigzag channel, which may be composed of two or more zigzag channels. The zigzag channel closest to the center of the tray 1 has the highest height inside the tray 1, and the zigzag channel closest to the outer side of the tray 1 has the lowest height inside the tray 1. In some specific embodiments, refer to... Figure 5 In the direction from the center of the tray 1 to the outside of the tray 1, the height of the second segment 202 inside the tray 1 gradually decreases or the depth gradually increases. That is, as the second segment 202 gradually extends outward, the distance of the point on the second segment 202 from the upper side of the tray 1 gradually increases.

[0071] In some embodiments, refer to Figures 10 to 12 The second segment 202, mapped onto the upper side of the tray 1, is arc-shaped, and the direction of the arc arrangement is opposite to the rotation direction of the tray during epitaxial growth. For example, it can be an arc-shaped channel, and in use, the arrangement direction of the arc-shaped channel is opposite to the rotation direction of the tray 1 during epitaxial growth. Since the tray 1 rotates at high speed during epitaxial growth, this arc-shaped air guide channel 2 is more conducive to the gas being discharged following the rotation of the tray 1. If the arrangement direction of the arc-shaped channel is the same as the rotation direction of the tray 1 during epitaxial growth, it will weaken or counteract the negative pressure effect caused by the Venturi effect, which is not conducive to gas discharge.

[0072] In some embodiments, the cross-section of the second segment 202 is circular. In some other embodiments, the cross-section of the air guide channel 2 is elliptical, square, or hexagonal.

[0073] In some embodiments, the wafer carrier areas 103 are evenly distributed around the central axis of the tray 1 for at least one circumference, and each wafer carrier area 103 is provided with at least one receiving slot 104 for placing wafers. In some specific embodiments, the wafer carrier areas 103 are evenly distributed around the central axis of the tray 1 for two or three circumferences.

[0074] In some specific embodiments, such as Figure 1As shown, the tray 1 is provided with multiple wafer carrying areas 103, which are evenly distributed around the central axis of the tray 1. Each wafer carrying area 103 is provided with a receiving slot 104 for placing wafers. Figure 1 The entire tray 1 is shown schematically as having six wafer carrier areas 103, each wafer carrier area 103 having a receiving slot 104. In reality, the entire tray 1 can have different numbers of wafer carrier areas 103 as needed, and each wafer carrier area 103 can also accommodate two or more receiving slots 104 for placing wafers.

[0075] In other specific embodiments, such as Figure 13 As shown, the tray 1 is provided with multiple wafer carrying areas 103, which are evenly distributed in two circles around the central axis of the tray 1. Each wafer carrying area 103 is provided with a receiving slot 104 for placing wafers.

[0076] In some specific embodiments, such as Figure 14 As shown, a plurality of wafer carrying areas 103 are provided on the tray 1. The plurality of wafer carrying areas 103 are evenly distributed around the central axis of the tray 1. Each wafer carrying area 103 is provided with a plurality of receiving slots 104 for placing wafers, and the relative positions of the receiving slots 104 in the wafer carrying area 103 are the same, thus forming that the receiving slots 104 in the wafer carrying area 103 are evenly distributed on the circumference.

[0077] In some embodiments, a plurality of second segments 202 are evenly arranged around the circumference of the tray 1. Each second segment 202 is respectively disposed between two adjacent wafer carrying areas 103 on the circumference of the tray 1, such as... Figure 1 and Figure 14 .

[0078] In some embodiments, each second segment 202 is disposed below a receiving groove 104 for placing a wafer within a wafer carrier region 103, such as... Figure 15 .

[0079] In some embodiments, a portion of the second segment 202 is located between two adjacent wafer carrier regions 103 on the circumference, and another portion of the second segment 202 is located below the receiving groove 104 for placing wafers within the wafer carrier region 103, such as... Figure 16 .

[0080] In some embodiments, at least one of a plurality of second segments is disposed on the lower side of the receiving groove, and at least one of a plurality of second segments is disposed between two adjacent wafer carrier regions, such as... Figure 17 .

[0081] In some embodiments, refer to Figure 1 , Figure 18 and Figure 19 The central region 101 of the tray 1 is provided with a plurality of tubular channels 203 that are recessed downward from the upper side and do not penetrate the tray 1. The tubular channels 203 are formed as the first section 201. The number of tubular channels 203 is the same as the number of the second section 202. The tubular channels 203 and the second section 202 are connected in a one-to-one correspondence.

[0082] In some embodiments, the plurality of tubular channels 203 are evenly distributed or staggered around the central axis of the tray 1. In some specific embodiments, the tray 1 is evenly provided with a plurality of cylindrical holes around the circumference of the central axis, and the plurality of cylindrical holes are the plurality of first segments 201. In some specific embodiments, the plurality of cylindrical holes are not distributed on the same circumference, but may be distributed on multiple circumferences. In some specific embodiments, the plurality of cylindrical holes are staggered, so that the air inlet of the first segment 201 can be located close to the center position of the original easily formed vortex, which can directly affect the area where vortex is easily formed and reduce the possibility of vortex formation. In some embodiments, the various tubular channels 203 are not interconnected.

[0083] In some embodiments, the tubular channel 203 and the second segment 202 corresponding to the tubular channel 203 are located in the same longitudinal section, and the positions or directions of the longitudinal sections in which each tubular channel 203 and the corresponding second segment 202 are located are different.

[0084] In Embodiment 1, multiple tubular channels 203 located in the central region 101 and second segments 202 extending radially inside the tray 1 and correspondingly connected to the multiple tubular channels 203 together form the gas guiding channel 2 inside the tray 1. During the epitaxial growth process, the pressure difference between the upper side of the central region 101 of the tray 1 and the outer side of the tray 1, and using the Venturi principle, allows some of the reactive gas in the central region 101 above the tray 1 to enter the tubular channels 203 and then flow out from the outer side of the tray 1 through the multiple second segments 202. This increases the gas flow velocity in the central region 101 above the tray 1 and reduces the gas flow retention in the central region 101 above the tray 1, thereby suppressing the convection and eddy current phenomena generated by the rotation of the tray 1 and thermal buoyancy in the central region 101 above the tray 1. This makes the area of ​​uniform gas source distribution larger, increases the effective contact between the gas and the wafer, thereby improving the utilization efficiency of the gas source and improving the uniformity of wafer epitaxial growth. Furthermore, since the area with uniform gas source distribution is larger, more wafers can be arranged on tray 1, which can increase production capacity and reduce wafer manufacturing costs.

[0085] Example 2

[0086] The difference between Example 2 and Example 1 is that in Example 2, referring to... Figure 20 The tray 1 has a first air guide 3 on the solid part of the central region 101 surrounded by the plurality of tubular channels 203, and the size of the first air guide 3 gradually decreases from bottom to top.

[0087] In some specific embodiments, the area of ​​the contact surface between the first air guide 3 and the solid portion of the central region 101 surrounded by the plurality of tubular channels 203 is not greater than the area of ​​the solid portion of the central region 101 surrounded by the plurality of tubular channels 203.

[0088] In some specific embodiments, such as Figure 20 The first air guide 3 is configured as a cone shape and is coaxially arranged with the tray 1.

[0089] In Embodiment 2, based on Embodiment 1, a first air guide 3 is added. This guide 3 directs the airflow in the central region 101 above the tray 1 into the air guide channel 2, making it easier for the gas in the central region 101 to exit and further reducing the stagnation of airflow in the central region 101 above the tray 1. Furthermore, by setting the first air guide 3 to gradually decrease in size, the spatial morphology of the flow field can be altered, reducing the volume of the gas stagnation area and more effectively directing the gas along the sidewall of the conical structure into the air guide channel 2, suppressing convection and eddy current phenomena caused by the rotation of the tray 1 and thermal buoyancy.

[0090] Example 3

[0091] The difference between Embodiment 3 and Embodiment 1 is that in Embodiment 1, the central region 101 of the tray 1 is provided with a plurality of tubular channels 203 that are recessed downward from the upper side and do not penetrate the tray 1, and the tubular channels 203 are formed as the first segment 201. However, in Embodiment 3, referring to... Figure 21 The central region 101 of the tray 1 is provided with a hollow recess 204 that is recessed downward from the upper side and does not penetrate the tray 1. The central axis of the hollow recess 204 coincides with the central axis of the tray 1. The hollow recess 204 forms the first section 201 of the air guide channel 2. The hollow recess 204 is connected to the second section 202.

[0092] In some specific embodiments, the hollow recess 204 is a non-through cylindrical hole or prism hole.

[0093] The second segment 202 can be one or more. When there are multiple second segments 202, each second segment 202 shares the first segment 201 formed by the hollow recess 204.

[0094] In Embodiment 3, the hollow recess 204 located in the central region 101 and one or more second segments 202 extending radially along the tray 1 and connected to the hollow recess 204 together form the gas guiding channel 2 inside the tray 1. During the epitaxial growth process, the pressure difference between the upper side of the central region 101 of the tray 1 and the outer side of the tray 1 is utilized, and the Venturi principle is used to allow some of the reactive gas in the central region 101 above the tray 1 to enter the hollow recess 204 and then flow out from the outer side of the tray 1 through one or more second segments 202. This increases the gas flow velocity in the central region 101 above the tray 1 and reduces the gas flow retention in the central region 101 above the tray 1, thereby suppressing the convection and eddy current phenomena in the central region 101 above the tray 1 caused by the rotation of the tray 1 and thermal buoyancy. This makes the area of ​​uniform gas source distribution larger, increases the effective contact between the gas and the wafer, thereby improving the utilization efficiency of the gas source and improving the uniformity of wafer epitaxial growth. Furthermore, since the area with uniform gas source distribution is larger, more wafers can be arranged on tray 1, which can increase production capacity and reduce wafer manufacturing costs.

[0095] Example 4

[0096] The difference between Embodiment 4 and Embodiment 3 is that: a second air guide 4 is provided inside the hollow recess 204, as shown in the reference. Figure 22 The outer diameter of the second air guide 4 is smaller than the outer diameter of the hollow recess 204, thereby forming the annular channel between the hollow recess 204 and the second air guide 4 into the first section 201 of the air guide channel 2. The annular channel communicates with the one or more second sections 202. The second air guide 4 is fixedly or detachably disposed on the bottom surface of the hollow recess 204.

[0097] In some embodiments, the top end of the second air guide 4 is flush with the upper side of the tray 1, or the top end of the second air guide 4 protrudes from the upper side of the tray 1.

[0098] In some embodiments, the size of the second air guide 4 gradually decreases from bottom to top.

[0099] In some specific embodiments, reference is made to Figure 23 The second air guide 4 includes a cylindrical portion 401 and a conical portion 402. The interface between the cylindrical portion 401 and the conical portion 402 is flush with the upper side of the tray 1. The cylindrical portion 401 and the conical portion 402 are integrally formed or separate components. For example, the lower side of the second air guide 4 is cylindrical, and the upper side of the second air guide 4 is conical. The upper conical shape and the lower cylindrical shape are integrally formed, or the upper conical shape is detachably connected to the lower cylindrical shape. The apex of the upper conical shape of the second air guide 4 is higher than the height of the upper side of the tray 1.

[0100] In some embodiments, the lower side of the second air guide 4 is configured as a cylindrical or regular polygonal prism.

[0101] In some embodiments, the upper side of the second air guide 4 is configured as a cone or a regular polygonal pyramid.

[0102] In some embodiments, the interface between the cylindrical portion 401 and the tapered portion 402 is lower than the upper side surface of the tray 1.

[0103] In Example 4, a second air guide 4 is added based on Example 3. This second air guide 4 guides the airflow in the central region 101 above the tray 1 into the air guide channel 2, making it easier for the gas in the central region 101 to be discharged and further reducing the stagnation of the airflow in the central region 101 above the tray 1. Furthermore, the top of the second air guide 4 is set as a cone with a gradually decreasing size. On the one hand, this can change the spatial shape of the flow field and reduce the volume of the gas stagnation area; on the other hand, it can more effectively guide the gas to flow along the side wall of the cone-shaped structure into the air guide channel 2, suppressing convection and eddy current phenomena caused by the rotation of the tray 1 and thermal buoyancy.

[0104] Example 5

[0105] The difference between Embodiment 5 and Embodiment 3 is as follows: In Embodiment 3, the central region 101 of the tray 1 is provided with a hollow recess 204 that is recessed downward from the upper side and does not penetrate the tray 1. The central axis of the hollow recess 204 coincides with the central axis of the tray 1. The hollow recess 204 is formed as the first segment 201, and the hollow recess 204 communicates with the second segment 202. In Embodiment 5, referring to... Figure 24 The central region 101 of the tray 1 is provided with an annular recess 205 that is recessed downward from the upper side and does not penetrate the tray 1. The central axis of the annular recess 205 coincides with the central axis of the tray 1. The annular recess 205 is formed as the first segment 201. The annular recess 205 is connected to the second segment 202.

[0106] In some specific embodiments, the annular recess 205 is a non-through annular groove.

[0107] The second segment 202 can be one or more. When there are multiple second segments 202, each second segment 202 shares the first segment 201 formed by the annular recess 205.

[0108] In Embodiment 5, the annular recess 205 located in the central region 101 and one or more second segments 202 extending radially along the tray 1 and connected to the annular recess 205 together form the air guiding channel 2 inside the tray 1. During the epitaxial growth process, by utilizing the pressure difference between the upper side of the central region 101 of the tray 1 and the outer side of the tray 1, and by utilizing the Venturi principle, part of the reactive gas in the central region 101 above the tray 1 enters the annular recess 205, and then flows out from the outer side of the tray 1 through one or more second segments 202, reducing the retention of airflow in the central region 101 above the tray 1, thereby suppressing the generation of vortices in the central region 101 above the tray 1.

[0109] Example 6

[0110] The difference between Example 6 and Example 5 is that in Example 6, referring to... Figure 25 and Figure 26 A third air guide 5 is provided on the solid portion of the central region 101 surrounded by the annular recess 205 on the tray 1, and the size of the third air guide 5 gradually decreases from bottom to top.

[0111] In some specific embodiments, the area of ​​the contact surface between the third air guide 5 and the solid portion of the central region 101 surrounded by the annular recess 205 is not greater than the area of ​​the solid portion of the central region 101 surrounded by the annular recess 205.

[0112] In some specific embodiments, such as Figure 26 The third air guide 5 is cone-shaped and coaxially arranged with the tray 1.

[0113] In Example 6, a third air guide 5 is added based on Example 5. This third air guide 5 guides the airflow in the central region 101 above the tray 1 into the air guide channel 2, making it easier for the gas in the central region 101 to be discharged and further reducing the retention of airflow in the central region 101 above the tray 1. Furthermore, by setting the third air guide 5 to gradually decrease in size, the spatial morphology of the flow field can be changed, reducing the volume of the gas retention area and more effectively guiding the gas along the sidewall of the conical structure to the air guide channel 2, suppressing convection and eddy current phenomena caused by the rotation of the tray 1 and thermal buoyancy.

[0114] On the one hand, the present invention provides an epitaxial growth reaction chamber, with reference to Figure 27 The diagram shows a cross-sectional view of the epitaxial growth reaction chamber of the present invention.

[0115] The epitaxial growth reaction chamber 8 includes an air inlet device 6, a drive device 7, and a tray 1 as described in any of the above embodiments. The tray 1 is disposed inside the reaction chamber 8 and is connected to the drive device 7. The drive device 7 is used to drive the tray 1 to rotate during the epitaxial growth process. The tray 1 is used to place the wafer to be processed. The air inlet device 6 is disposed opposite to the tray 1. The air inlet device 6 is used to deliver gas source material for wafer processing into the reaction chamber 8 during the epitaxial growth process. During the epitaxial growth reaction, part of the reaction gas in the central region 101 of the reaction chamber 8 is discharged from the outer side of the tray 1 through the gas guide channel 2.

[0116] The epitaxial growth reaction chamber described in this invention is suitable for growing various III-V group, II-VI thin films or two-dimensional thin film materials, and the epitaxial process reactions involved include metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), etc.

[0117] In some specific embodiments of the present invention, the reaction chamber 8 is sealed, the rotating shaft of the driving device 7 extends into the reaction chamber 8, the tray 1 is fixed on the rotating shaft, and the air intake device 6 is connected to a gas source and located inside the reaction chamber 8. Exemplarily, for a vertical upright epitaxial growth reaction chamber, the air intake device 6 is disposed on the upper side of the tray 1 and is used to supply the gas source material for epitaxial growth onto the tray 1. The gas source material flows vertically from above the tray 1 towards the air source material.

[0118] On the upper surface of tray 1, a portion of the gas on the upper side of the central region 101 of tray 1 flows to the outside of tray 1 through the air guide channel 2 in the inner part of tray 1, reducing the retention of airflow in the central region 101 above tray 1, thereby suppressing the convection and vortex phenomena generated in the central region 101 above tray 1 due to the rotation of tray 1 and thermal buoyancy.

[0119] Although embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that all such modifications and variations fall within the scope and spirit of the invention as described in the claims.

[0120] The present invention described herein may have other embodiments and may be implemented or carried out in various ways.

Claims

1. A tray for epitaxial growth, characterized in that, The upper side of the tray is provided with multiple wafer-bearing areas for placing wafers, and the inside of the tray is provided with air guiding channels. The tray includes a central region and a peripheral region coaxially arranged, the wafer carrier area is located in the peripheral region, and the central region is a non-wafer carrier area; One end of the air guide channel extends to the central area on the upper side of the tray, and the other end of the air guide channel extends to the outer side of the tray. The air guide channel is used to connect the space on the upper side of the tray and the space on the outer side of the tray. The air guide channel includes at least one first section and at least one second section; the first section is located in the central region of the tray and communicates with the space on the upper side of the tray, the second section communicates with the space on the outer side of the tray, the first section is arranged along the axial direction of the tray, and the second section is arranged along the radial direction of the tray. The distance from the end of the second segment near the outer side of the tray to the upper side of the tray is greater than or equal to the distance from the end of the second segment near the center area of ​​the tray to the upper side of the tray; The tray has a hollow or annular recess in its central region that is recessed downwards from the upper side of the tray and does not penetrate the tray. When the tray has the hollow recess, the central axis of the hollow recess coincides with the central axis of the tray. A second air guide is provided inside the hollow recess, and the outer diameter of the second air guide is smaller than the outer diameter of the hollow recess, so that the gas in the central region of the tray can be discharged more easily. The annular channel between the hollow recess and the second air guide forms the first section, and the annular channel communicates with the second section. When the tray has the annular recess, the central axis of the annular recess coincides with the central axis of the tray. The annular recess forms the first section, and the annular recess communicates with the second section. A third air guide is provided on the solid portion of the central region of the tray surrounded by the annular recess, so that the gas in the central region of the tray can be discharged more easily.

2. The pallet according to claim 1, characterized in that, In the direction along the central region toward the outer side of the tray, the distance from each position on the second segment to the upper side of the tray gradually increases.

3. The tray according to claim 1, characterized in that, The second segment is mapped into an arc shape on the upper side of the tray, and the arrangement direction of the arc is opposite to the rotation direction of the tray during the epitaxial growth process.

4. The tray according to claim 1, characterized in that, Multiple wafer carrying areas are evenly arranged on the circumference of the tray, and each wafer carrying area is provided with at least one receiving groove for placing wafers.

5. The tray according to claim 4, characterized in that, The second section is evenly distributed in multiple parts on the circumference of the tray.

6. The pallet according to claim 5, characterized in that, The second segment is disposed between two adjacent wafer carrier regions; Alternatively, the second section may be disposed on the lower side of the receiving groove; Alternatively, at least one of the plurality of second segments may be disposed on the lower side of the receiving groove, and at least one of the plurality of second segments may be disposed between two adjacent wafer carrier areas.

7. The tray according to claim 1, characterized in that, The central area of ​​the tray is provided with a plurality of tubular channels that are recessed downward from the upper side of the tray and do not penetrate the tray. Each of the tubular channels forms a first segment. The number of the tubular channels is the same as the number of the second segments. The tubular channels correspond one-to-one with the second segments and are connected.

8. The tray according to claim 7, characterized in that, The tubular channel and the second segment corresponding to the tubular channel are located in the same longitudinal section.

9. The tray according to claim 7, characterized in that, The multiple tubular channels are evenly distributed or staggered around the central axis of the tray.

10. The tray according to claim 7, characterized in that, The solid portion of the central region of the tray surrounded by the tubular channel is provided with a first air guide, the size of which gradually decreases from bottom to top.

11. The tray according to claim 1, characterized in that, The top end of the second air guide is flush with the upper side of the tray, or the top end of the second air guide protrudes from the upper side of the tray.

12. The pallet according to claim 11, characterized in that, The second air guide includes a cylindrical part and a conical part, and the interface between the cylindrical part and the conical part is flush with or lower than the upper side of the tray.

13. The pallet according to claim 12, characterized in that, The cylindrical part and the conical part are either integrally formed components or separate components.

14. The tray according to claim 1, characterized in that, The size of the second air guide gradually decreases from bottom to top.

15. The pallet according to claim 1, characterized in that, The dimensions of the third air guide gradually decrease from bottom to top.

16. An epitaxial growth reaction chamber, characterized in that, Includes an air intake device, a drive device, and a tray as described in any one of claims 1 to 15; The tray is disposed in the reaction chamber and connected to the driving device. The driving device is used to drive the tray to rotate during the epitaxial growth process. The tray is used to place the wafer to be processed. The air intake device is disposed opposite to the tray, and the air intake device is used to deliver gas source material for wafer processing into the reaction chamber during the epitaxial growth process; Furthermore, during the epitaxial growth reaction, a portion of the gas in the central region of the reaction chamber moves to the outer side of the tray via the gas guide channel.

Images