Isolation baffle device for MOCVD reaction chamber

Abstract

The application provides an isolation baffle device of an MOCVD reaction chamber, which comprises a ring-shaped baffle, a sandwich flow channel suitable for containing cooling liquid inside the ring-shaped baffle, a liquid injection channel at one end of the sandwich flow channel, a liquid outlet channel at the other end of the sandwich flow channel, and a plurality of longitudinally distributed injection passages for connecting the sandwich flow channel and the liquid injection channel, and a plurality of longitudinally distributed discharge passages for connecting the sandwich flow channel and the liquid outlet channel. The application adjusts the positions of the cooling liquid injection and discharge of the sandwich flow channel in the isolation baffle device, so that the distribution range of the cooling liquid in the sandwich flow channel is wider and more uniform, the problem of uneven cooling of the isolation baffle device is improved, and the uniformity of the temperature field distribution inside the reaction chamber is improved.

Description

Technical Field

[0001] This invention relates to the field of metal-organic chemical vapor deposition equipment, and more particularly to an isolation baffle device for an MOCVD reaction chamber. Background Technology

[0002] MOCVD (Metal-organic Chemical Vapor Deposition) is a novel vapor-phase epitaxial growth technology developed based on vapor-phase epitaxy (VPE). MOCVD operates via thermal decomposition reactions. The most crucial aspect of MOCVD reaction chamber design lies in the design of the internal flow and temperature fields. Only with appropriately designed flow and temperature fields can the reaction process proceed smoothly, improving the utilization rate of the reactant source materials and enhancing the quality of the deposited film. Therefore, MOCVD equipment typically incorporates shutters to influence the flow and temperature field distribution within the reaction chamber.

[0003] As attached Figure 1a As shown, several process gases required for the MOCVD epitaxial process enter the reaction chamber 10 through the gas inlet device of the upper cover 20. The flow field of the process gases is restricted by the isolation baffle device 30 surrounding the side wall of the reaction chamber, guiding the gas flow onto the substrate tray 40. A chemical reaction occurs on the substrate surface to deposit a thin film. Afterward, a vacuum pump is used to discharge the reaction gases (and reaction byproducts, etc.) from the evacuation port at the bottom of the reaction chamber 10. The side wall of the reaction chamber 10 is provided with an opening for inserting or removing the substrate tray 40. The isolation baffle device 30 can move between a first position with the opening closed and a second position with the opening open.

[0004] The isolation baffle device 30 typically has a coolant pipe inside. Coolant is introduced into the isolation baffle device 30 through the corresponding coolant inlet on the upper cover 20 to cool the isolation baffle device 30. Its water-cooling structure is usually designed so that coolant is injected from the top of the isolation baffle device 30 and flows out from the top of the isolation baffle device 30. (See attached diagram) Figure 1b .

[0005] An analysis of the application of water-cooled structures in existing isolation baffle devices is provided (see Appendix). Figure 1cIt is found that, due to the adoption of the up-in and up-out cooling structure, the flow rate of the upper layer of the cooling liquid in the isolation baffle device is obviously higher than that of the lower layer, the flow rate uniformity is poor, the cooling of the isolation baffle device is uneven, the temperature of the lower layer is much higher than that of the upper layer, the temperature field in the reaction chamber is uneven, and the uniformity of the epitaxial layer grown on the substrate surface is affected. Moreover, when used for a long time, due to the uneven cooling, the deformation of the isolation baffle device is difficult to predict, and the repeatability of material growth is easily affected, which interferes with the judgment of the process for the poor repeatability. For the isolation baffle device itself, the service life is also affected.

[0006] Therefore, it is necessary to provide a new isolation baffle device of a MOCVD reaction chamber to solve the above problems existing in the prior art. SUMMARY

[0007] The purpose of the present application is to provide an isolation baffle device of a MOCVD reaction chamber to improve the problem of uneven cooling of the isolation baffle device.

[0008] To achieve the above purpose, the present application provides an isolation baffle device of a MOCVD reaction chamber, comprising: an annular baffle, a sandwich flow channel adapted to accommodate a cooling liquid inside the annular baffle, a liquid injection channel located at one end of the sandwich flow channel, a liquid outlet channel located at the other end of the sandwich flow channel, and a plurality of longitudinally distributed injection passages communicating the sandwich flow channel and the liquid injection channel, and a plurality of longitudinally distributed discharge passages communicating the sandwich flow channel and the liquid outlet channel.

[0009] Specifically, the sandwich flow channel and the annular baffle have the same shape in the vertical direction, the sandwich flow channel comprises a plurality of annular segment portions with different inner diameters from top to bottom, at least one injection point of the injection passage is located in the uppermost annular segment portion, and at least one injection point of the injection passage is located in the lowermost annular segment portion.

[0010] Exemplarily, each of the annular segment portions is provided with an injection point of the injection passage, and the injection points of the injection passage on each of the annular segment portions are uniformly distributed.

[0011] The inner diameters of the annular segment portions gradually increase from top to bottom, and the inner diameters of the upper and lower annular segment portions of the uppermost annular segment portion of the sandwich flow channel are the same, and the inner diameters of the other annular segment portions gradually increase from top to bottom with different slopes.

[0012] In a possible embodiment, the injection passage and the discharge passage are located on the vertical section of the sandwich flow channel, each of the injection passages forms an angle with the tangent plane of the annular segment portion connected thereto, and the angle is greater than or equal to 30°.

[0013] In one possible embodiment, the included angles are all greater than or equal to 45°.

[0014] In one specific embodiment, the included angles are all greater than or equal to 70° and less than or equal to 120°.

[0015] Optionally, when one of the annular segment portions is connected to multiple injection channels, the multiple injection channels are parallel to each other.

[0016] Each of the injection channels forms an included angle with the tangent plane of the annular segment portion connected to the injection channel.

[0017] The injection channels are all arranged in a horizontal direction.

[0018] The injection channels and the discharge channels are symmetrically arranged about the central axis of the interlayer flow channel at both ends of the interlayer flow channel.

[0019] The isolation baffle device of the MOCVD reaction chamber provided by the present application has the following beneficial effects: multiple cooling liquid injection channels are arranged at one end of the interlayer flow channel in the isolation baffle device, and multiple cooling liquid discharge channels are arranged at the other end, so that the cooling liquid can flow into the interlayer flow channel from different positions and be discharged from the interlayer flow channel from different positions, thereby adjusting the flow rate distribution state of the cooling liquid in the interlayer flow channel, making the flow range of the cooling liquid in the interlayer flow channel larger and the distribution more uniform. Compared with the prior art, the design of the present application significantly improves the problem of uneven cooling of the isolation baffle device, thereby improving the uniformity of the temperature field distribution inside the reaction chamber, and thus improving the uniformity of the epitaxial layer grown on the surface of the substrate. At the same time, the cooling effect of the isolation baffle device is significantly improved, and the isolation baffle is less likely to deform, thereby reducing the interference with the repeatability of the epitaxial growth process. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1a FIG. 1 is a structural schematic diagram of a MOCVD reaction chamber in the prior art;

[0021] Figure 1b FIG. 2 is a structural schematic diagram of an isolation baffle device of a MOCVD reaction chamber in the prior art;

[0022] Figure 1c FIG. 3 is a simulation diagram of the cooling liquid flow effect of the isolation baffle device in the prior art;

[0023] Figures 2a-2b FIG. 4 is a structural schematic diagram of an isolation baffle device of a MOCVD reaction chamber according to Embodiment 1 of the present application and a corresponding simulation diagram of the cooling liquid flow effect thereof;

[0024] Figures 3a-3b FIG. 5 is a structural schematic diagram of an isolation baffle device of a MOCVD reaction chamber according to Embodiment 2 of the present application and a corresponding simulation diagram of the cooling liquid flow effect thereof;

[0025] Figures 4a-4b Structure diagram of the isolation baffle device of the MOCVD reaction chamber of the embodiment 3 of the present application and the corresponding simulation diagram of the cooling liquid flow effect thereof;

[0026] Figures 5a-5b Structure diagram of the isolation baffle device of the MOCVD reaction chamber of the embodiment 4 of the present application and the corresponding simulation diagram of the cooling liquid flow effect thereof;

[0027] Figures 6a-6b Structure diagram of the isolation baffle device of the MOCVD reaction chamber of the embodiment 5 of the present application and the corresponding simulation diagram of the cooling liquid flow effect thereof;

[0028] Figures 7a-7b Structure diagram of the isolation baffle device of the MOCVD reaction chamber of the embodiment 6 of the present application and the corresponding simulation diagram of the cooling liquid flow effect thereof.

[0029] Reference signs:

[0030] 100 - annular baffle; 1 - interlayer flow channel; 11 - outer layer cylindrical baffle; 12 - inner layer cylindrical baffle; 13 - first annular segment; 14 - second annular segment; 15 - third annular segment; 21 - liquid injection channel; 22 - liquid outlet channel; 31 - injection passage; 32 - discharge passage; 4 - center axis of the interlayer flow channel. DETAILED DESCRIPTION

[0031] In order to make the objects, technical solutions and advantages of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application. Unless otherwise defined, the technical terms or scientific terms used herein should be understood as the common meanings thereof by those of ordinary skill in the art to which the present application belongs. The similar words such as "comprise" used herein mean that the elements or objects before the words cover the elements or objects listed after the words and their equivalents, without excluding other elements or objects.

[0032] In view of the problems in the prior art, the embodiments of the present application provide an isolation baffle device of a MOCVD reaction chamber.

[0033] Reference is made to Figure 2aThe isolation baffle device of the MOCVD reaction chamber comprises a ring-shaped baffle 100, a sandwich flow channel 1 adapted to accommodate a cooling liquid inside the ring-shaped baffle 100, a liquid injection channel 21 at one end of the sandwich flow channel 1, a liquid outlet channel 22 at the other end of the sandwich flow channel 1, and a plurality of longitudinally distributed injection passages 31 connecting the sandwich flow channel 1 and the liquid injection channel 21, and a plurality of longitudinally distributed discharge passages 32 connecting the sandwich flow channel 1 and the liquid outlet channel 22.

[0034] In the isolation baffle device of the MOCVD reaction chamber of the embodiment, a plurality of longitudinally distributed cooling liquid injection passages 31 are arranged at one end of the sandwich flow channel 1, and a plurality of longitudinally distributed cooling liquid discharge passages 32 are arranged at the other end of the sandwich flow channel 1, so that the cooling liquid can flow into the sandwich flow channel 1 from different positions and be discharged from the sandwich flow channel 1 from different positions, thereby adjusting the flow rate distribution state of the cooling liquid in the sandwich flow channel 1, making the range of the cooling liquid flowing in the sandwich flow channel 1 larger and the cooling liquid distribution more uniform. Compared with the prior art, the design of the embodiment significantly improves the problem of uneven cooling of the isolation baffle device, improves the uniformity of the temperature field distribution inside the reaction chamber, and is therefore beneficial to the improvement of the uniformity of the epitaxial layer grown on the surface of the substrate. At the same time, the cooling effect of the isolation baffle device is significantly improved, and the isolation baffle is not easy to deform, thereby reducing the interference with the repeatability of the epitaxial growth process.

[0035] In a possible embodiment, at least two connecting rods are mounted on the top of the ring-shaped baffle 100, each of the connecting rods is provided with the liquid injection channel 21 or the liquid outlet channel 22 for introducing the cooling liquid into the sandwich flow channel 1 inside the ring-shaped baffle 100, and at least one liquid injection channel 21 and at least one liquid outlet channel 22 are included. At one end of the sandwich flow channel 1, the sandwich flow channel 1 and the liquid injection channel 21 are connected through a plurality of injection passages 31 longitudinally distributed along the sandwich flow channel 1, and at the other end of the sandwich flow channel 1, the sandwich flow channel 1 and the liquid outlet channel 22 are connected through a plurality of discharge passages 32 longitudinally distributed along the sandwich flow channel 1. That is, the liquid injection channel 21 is the main passage for introducing the cooling liquid, the plurality of longitudinally distributed injection passages 31 are branch passages for introducing the cooling liquid into the sandwich flow channel 1, the plurality of longitudinally distributed discharge passages 32 are branch passages for discharging the cooling liquid in the sandwich flow channel 1, and the liquid outlet channel 22 is the main passage for discharging the cooling liquid.

[0036] In one specific embodiment, the isolation baffle device of the MOCVD reaction chamber is provided with two channels for injecting or discharging the cooling liquid into or out of the interlayer flow channel 1, one of which is the injection channel 21 and the other is the discharge channel 22. Preferably, the injection channel 21 and the discharge channel 22 are oppositely distributed, and the line between the injection channel 21 and the discharge channel 22 intersects the central axis 4 of the interlayer flow channel 1. The opposite distribution of the injection channel 21 and the discharge channel 22 can make the cooling liquid flow into the interlayer flow channel 1 through the injection channel 21, and the range of the interlayer flow channel 1 passed by the cooling liquid flowing to the discharge channel 22 in any direction is relatively uniform, which is beneficial to the uniform distribution of the cooling liquid.

[0037] Optionally, the injection passage 31 and the discharge passage 32 can be symmetrically distributed about the central axis 4 of the interlayer flow channel 1 at both ends of the interlayer flow channel 1. That is, the injection passage 31 and the discharge passage 32 include the same number of passages, the same height, and the same direction. The injection passage 31 and the discharge passage 32 can also include different numbers of passages and / or different heights and angles.

[0038] In addition, the structure design of the embodiment makes it unnecessary to explicitly distinguish which of the above channels is the injection channel 21 and which is the discharge channel 22 when applied. For example, when two channels for injecting or discharging the cooling liquid into or out of the interlayer flow channel 1 are provided, selecting one as the injection channel 21 makes the other one the discharge channel 22.

[0039] In one possible embodiment, the plurality of injection passages 31 are uniformly distributed. Specifically, the injection points of the plurality of injection passages 31 are uniformly distributed in the height direction of the interlayer flow channel 1.

[0040] In one possible embodiment, the plurality of injection passages 31 are all located on the vertical cross section of the interlayer flow channel 1 and are parallel to each other; or the plurality of injection passages 31 are all located on the vertical cross section of the interlayer flow channel 1, but at least two of the plurality of injection passages 31 are not parallel to each other but at a certain angle; or the plurality of injection passages 31 are not all located on the vertical cross section of the interlayer flow channel 1, that is, at least one of the plurality of injection passages 31 is located on a plane at a certain angle to the vertical cross section of the interlayer flow channel 1.

[0041] In one possible embodiment, the plurality of injection passages 31 are all arranged in the horizontal direction.

[0042] The arrangement of the plurality of discharge passages 32 is similar to the arrangement of the injection passages 31 described above.

[0043] The specific arrangement of the plurality of injection passages 31 and the plurality of discharge passages 32 is adjusted according to the flow velocity distribution state of the cooling liquid in the interlayer flow channel 1.

[0044] In one possible embodiment, the sandwich flow channel 1 and the annular baffle 100 have the same shape in the vertical direction. Specifically, the annular baffle 100 is formed by welding an outer layer of cylindrical baffles 11 and an inner layer of cylindrical baffles 12, the outer layer of cylindrical baffles 11 and / or the inner layer of cylindrical baffles 12 are provided with annular grooves, and the space between the inner wall of the outer layer of cylindrical baffles 11 and the outer wall of the inner layer of cylindrical baffles 12 forms the sandwich flow channel 1. The outer layer of cylindrical baffles 11 and the inner layer of cylindrical baffles 12 have different inner diameters from top to bottom, and correspondingly, the sandwich flow channel 1 includes a plurality of annular sections with different inner diameters from top to bottom. Optionally, the injection points of the at least one injection passage 31 are located in the uppermost annular section, and the injection points of the at least one injection passage 31 are located in the lowermost annular section. Optionally, each annular section is provided with at least one injection point of the injection passage 31, and optionally, the injection points of the injection passage 31 on each annular section are uniformly distributed.

[0045] It should be understood that the number of annular sections is not limited in the embodiments of the present application, and can be two or more.

[0046] For example, when the sandwich flow channel 1 includes two annular sections with different inner diameters from top to bottom, i.e., an upper annular section and a lower annular section connected to the upper annular section, the upper annular section is connected to the at least one injection passage 31, and the lower annular section is also connected to the at least one injection passage 31. When the sandwich flow channel 1 includes three annular sections with different inner diameters from top to bottom, referring to Figure 2a , the sandwich flow channel 1 includes a first annular section 13 at the uppermost position, a second annular section 14 at the middle position, and a third annular section 15 at the lowermost position. The first annular section 13 at the uppermost position is connected to i injection passages 31, where i≥1; the second annular section 14 at the middle position is connected to j injection passages 31, where j≥0, and when j=0, the second annular section 14 at the middle position is not connected to the injection passage 31; and the third annular section 15 at the lowermost position is connected to k injection passages 31, where k≥1. Preferably, each annular section is connected to at least one injection passage 31, and preferably, when i≥2, the injection points of the i injection passages 31 in the first annular section 13 are uniformly distributed in the height direction, when j≥2, the injection points of the j injection passages 31 in the second annular section 14 are uniformly distributed in the height direction, and when k≥2, the injection points of the k injection passages 31 in the third annular section 15 are uniformly distributed in the height direction.

[0047] In one possible embodiment, among the plurality of annular sections with different inner diameters included in the sandwich flow channel 1 from top to bottom, the inner diameters of at least two annular sections change at different slopes, so that the sandwich flow channel 1 has a stepped shape.

[0048] In one possible embodiment, the inner diameter of the annular segment gradually increases from top to bottom, and the inner diameter of the annular segment located at the uppermost part of the interlayer flow channel is the same from top to bottom, and the inner diameter of the other annular segments gradually increases from top to bottom with different slopes.

[0049] For example, when the interlayer flow channel 1 includes two annular segments with different inner diameters from top to bottom, i.e., an annular segment located at the upper part and an annular segment located at the lower part connected to the annular segment located at the upper part, the inner diameter of the annular segment located at the upper part is the same from top to bottom, i.e., the inner diameter changes with a slope of 0, the inner diameter of the annular segment located at the lower part is greater than that of the annular segment located at the upper part, and the inner diameter of the annular segment located at the lower part gradually increases, i.e., the inner diameter increases with a slope other than 0. When the interlayer flow channel 1 includes three annular segments with different inner diameters from top to bottom, still referring to Figure 2a , the inner diameter of the first annular segment 13 located at the uppermost part is the same from top to bottom, the inner diameter of the second annular segment 14 is greater than that of the first annular segment 13, and the inner diameter of the third annular segment 15 is greater than that of the second annular segment 14, wherein the inner diameter of the second annular segment 14 gradually increases from top to bottom with a first slope, and the inner diameter of the third annular segment 15 gradually increases from top to bottom with a second slope, wherein the first slope is not equal to the second slope.

[0050] In one possible embodiment, the injection passage 31 and the discharge passage 32 are located on the vertical cross section of the interlayer flow channel 1, and the included angle formed by each injection passage 31 and the tangent plane of the annular segment connected to the injection passage is greater than or equal to 30°. Preferably, the included angle

[0051] is greater than or equal to 45°.

[0052] Preferably, the included angle is greater than or equal to 70° and less than or equal to 120°.

[0053] In one possible embodiment, when one annular segment is connected to multiple injection passages 31, the multiple injection passages connected to the annular segment are parallel to each other.

[0054] In one possible embodiment, the included angle formed by each injection passage 31 and the tangent plane of the annular segment connected to the injection passage is equal.

[0055] For example, referring to Figure 2a , the first annular segment 13 is connected to i injection passages 31, and the included angle formed by any one of the i injection passages 31 and the tangent plane of the first annular segment 13 is equal. ​; the second annular section 14 is provided with j injection channels 31, any one of the j injection channels 31 forms an angle with the tangent plane of the second annular section 14 , the j injection channels 31 form j angles ; the third annular section 15 is provided with k injection channels 31, any one of the k injection channels 31 forms an angle with the tangent plane of the third annular section 15 , the k injection channels 31 form k angles .

[0056] i angles may be the same or different, j angles may be the same or different, k angles may be the same or different. Preferably, when the first annular section 13 is connected with i (i≥2) injection channels 31, the i injection channels are parallel to each other, that is, the i injection channels 31 form i angles with the tangent plane of the first annular section 13 are all equal; when the second annular section 14 is connected with j (j≥2) injection channels 31, the j injection channels are parallel to each other, that is, the j injection channels 31 form j angles with the tangent plane of the second annular section 14 are all equal; when the third annular section 15 is connected with k (k≥2) injection channels 31, the k injection channels are parallel to each other, that is, the k injection channels 31 form k angles with the tangent plane of the third annular section 15 are all equal. Preferably, .

[0057] The embodiment of the present application provides a kind of isolation baffle device of MOCVD reaction chamber, so that cooling liquid can flow into interlayer flow channel from different positions also can be exported from different positions interlayer flow channel, so as to adjust the flow velocity distribution state of cooling liquid in interlayer flow channel, so that the flow range of cooling liquid in interlayer flow channel is larger, and distribution is more uniform.

[0058] The following provides the injection channel 31 and the angle formed by the tangent plane of the annular section connected with the injection channel is different angle (i.e. different injection angle) embodiment, relative to comparative example, it is obvious to improve the problem of uneven cooling of isolation baffle device, improve the uniformity of temperature field distribution in reaction chamber, thus it is advantageous to the uniformity of epitaxial layer of substrate surface growth promotion.The influence on the distribution state of the flow velocity of cooling liquid in interlayer flow channel 1, thus show its cooling effect to isolation baffle device.

[0059] Comparative example

[0060] Referring to the drawings attached in the specification Figures 1a-1cThe prior art isolation baffle device includes an annular baffle, a sandwich flow channel adapted to accommodate the cooling liquid inside the annular baffle, a liquid injection channel above the sandwich flow channel, and a liquid outlet channel. Figure 1c As shown in the simulation diagram of the cooling liquid flow effect of the prior art isolation baffle device, the upper layer cooling liquid flow rate inside the isolation baffle device is obviously higher than the lower layer cooling liquid flow rate, the flow rate uniformity is poor, the cooling liquid generates vortex flow in the sandwich flow channel, and the cooling liquid flow area is small, resulting in uneven cooling of the isolation baffle device.

[0061] Embodiment 1

[0062] Referring to Figure 2a The isolation baffle device includes an annular baffle 100, a sandwich flow channel 1 adapted to accommodate the cooling liquid inside the annular baffle 100, a liquid injection channel 21 at one end of the sandwich flow channel 1, a liquid outlet channel 22 at the other end of the sandwich flow channel 1, and a plurality of longitudinally distributed injection passages 31 communicating the sandwich flow channel 1 and the liquid injection channel 21, and a plurality of longitudinally distributed discharge passages 32 communicating the sandwich flow channel 1 and the liquid outlet channel 22. The liquid injection channel 21 and the liquid outlet channel 22 are symmetrically arranged.

[0063] The sandwich flow channel 1 has the same shape as the annular baffle 100 in the vertical direction. The sandwich flow channel 1 includes three annular segment portions with different inner diameters from top to bottom, i.e., a first annular segment portion 13 at the uppermost portion, a second annular segment portion 14 at the middle portion, and a third annular segment portion 15 at the lowermost portion. The inner diameter of the first annular segment portion 13 is the same from top to bottom, the inner diameter of the second annular segment portion 14 is larger than that of the first annular segment portion 13 and gradually increases from top to bottom, and the inner diameter of the third annular segment portion 15 is larger than that of the second annular segment portion 14 and gradually increases from top to bottom.

[0064] The first annular segment portion 13 is connected with a plurality of injection passages 31, the second annular segment portion 14 is connected with a plurality of injection passages 31, and the third annular segment portion 15 is connected with a plurality of injection passages 31. Each injection passage 31 is parallel to each other and arranged horizontally. The discharge passage 32 is symmetrically arranged with the injection passage 31.

[0065] The simulation diagram of the cooling liquid flow effect of the above-mentioned isolation baffle device is shown in Figure 2b As can be seen, the cooling liquid does not generate vortex flow when flowing through the sandwich flow channel 1, and compared with the comparative example, the cooling liquid flow area is larger and the cooling uniformity is better.

[0066] Embodiment 2

[0067] Referring to Figure 3a and Figure 3b, the difference between Example 2 and Example 1 is that in Example 1, each injection passage 31 is parallel to each other and horizontally arranged, while in Example 2, the injection passages 31 communicating with the first annular section 13 are parallel to each other and have an angle of 30° with the tangent plane of the first annular section 13, the injection passages 31 communicating with the second annular section 14 are parallel to each other and have an angle of 30° with the tangent plane of the second annular section 14, and the injection passages 31 communicating with the third annular section 15 are parallel to each other and have an angle of 30° with the tangent plane of the third annular section 15. With this angle arrangement, although the cooling liquid still generates vortex flow in the interlayer flow channel 1, the cooling liquid flow area is significantly increased, and the cooling uniformity is improved compared with the comparative example.

[0068] Example 3

[0069] Referring to Figure 4a and Figure 4b , the difference between Example 3 and Example 2 is that in this example, the injection passages 31 communicating with the first annular section 13 have an angle of 45° with the tangent plane of the first annular section 13, the injection passages 31 communicating with the second annular section 14 have an angle of 45° with the tangent plane of the second annular section 14, and the injection passages 31 communicating with the third annular section 15 have an angle of 45° with the tangent plane of the third annular section 15. With this angle arrangement, compared with the comparative example and the scheme of Example 2, the vortex flow area is reduced, the cooling liquid flow area is further increased, and the cooling uniformity is further improved.

[0070] Example 4

[0071] Referring to Figure 5a and Figure 5b , the difference between Example 4 and Example 3 is that in this example, the injection passages 31 communicating with the first annular section 13 have an angle of 90° with the tangent plane of the first annular section 13, the injection passages 31 communicating with the second annular section 14 have an angle of 90° with the tangent plane of the second annular section 14, and the injection passages 31 communicating with the third annular section 15 have an angle of 90° with the tangent plane of the third annular section 15. With this angle arrangement, no vortex flow is generated when the cooling liquid flows through the interlayer flow channel 1, and compared with the comparative example and the scheme of Example 3, the cooling liquid flow area is larger, and the cooling uniformity is better.

[0072] Example 5

[0073] Referring to Figure 6a and Figure 6b, the difference between Example 5 and Example 4 is that, in this example, the angle between the injection passage 31 communicating with the first annular section 13 and the tangent plane of the first annular section 13 is 100°, the angle between the injection passage 31 communicating with the second annular section 14 and the tangent plane of the second annular section 14 is 100°, and the angle between the injection passage 31 communicating with the third annular section 15 and the tangent plane of the third annular section 15 is 100°. With this angle setting, no vortex is generated when the cooling water flows through the interlayer flow channel 1, and compared with the comparative example and the scheme of Example 4, the cooling liquid flows more uniformly and the cooling effect is more ideal.

[0074] Example 6

[0075] Referring to Figure 7a and Figure 7b , the difference between Example 6 and Example 5 is that, in this example, the angle between the injection passage 31 communicating with the first annular section 13 and the tangent plane of the first annular section 13 is 120°, the angle between the injection passage 31 communicating with the second annular section 14 and the tangent plane of the second annular section 14 is 120°, and the angle between the injection passage 31 communicating with the third annular section 15 and the tangent plane of the third annular section 15 is 120°. With this angle setting, compared with Example 5, although the cooling liquid will generate vortex in the interlayer flow channel 1, compared with the comparative example, the cooling liquid flows through a larger area, and more cooling liquid flows through the lower end of the interlayer flow channel 1. Since the heating disc of the MOCVD reaction chamber is located at the lower end of the isolation baffle device, this scheme is more suitable for actual production than the comparative example, and can achieve good cooling effect.

[0076] In summary, the isolation baffle device of the MOCVD reaction chamber provided by the present application makes the cooling liquid in the interlayer flow channel distribute more widely and uniformly, improves the problem of uneven cooling of the isolation baffle device, and thus can improve the uniformity of the temperature field distribution inside the reaction chamber. Further, by adjusting the angle between the injection passage on the interlayer flow channel and the tangent plane of the annular section where the injection passage is located, the vortex phenomenon of the cooling liquid in the interlayer flow channel can be eliminated, and the cooling uniformity is more ideal.

[0077] Although the embodiments of the present application have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes all fall within the scope and spirit of the present application described in the claims. Moreover, the present application described herein can have other embodiments, and can be implemented or realized in various ways.

Claims

1. An isolation baffle device for an MOCVD reaction chamber, characterized in that, include: An annular baffle, a jacketed flow channel located inside the annular baffle suitable for containing coolant, an injection channel located at one end of the jacketed flow channel, an outlet channel located at the other end of the jacketed flow channel, and a plurality of longitudinally distributed injection passages connecting the jacketed flow channel and the injection channel, and a plurality of longitudinally distributed discharge passages connecting the jacketed flow channel and the outlet channel. The interlayer flow channel and the annular baffle have the same shape in the vertical cross-section, and the interlayer flow channel includes multiple annular segments with different inner diameters from top to bottom; The inner diameter of the annular segment gradually increases from top to bottom, and the inner diameter of the annular segment at the top of the interlayer flow channel is the same at both the top and bottom, while the inner diameter of the other annular segments gradually increases from top to bottom with different slopes. The injection passage and the discharge passage are symmetrically arranged at both ends of the interlayer flow channel about the central axis of the interlayer flow channel; At least one injection point of the injection path is located in the uppermost annular segment, and at least one injection point of the injection path is located in the lowermost annular segment; Each of the annular segments is provided with an injection point of the injection path, and the injection points of the injection path on each of the annular segments are evenly distributed.

2. The isolation baffle device according to claim 1, characterized in that, Both the injection passage and the discharge passage are located on the vertical cross-section of the interlayer flow channel. Each injection passage forms an angle with the cross-section of the annular segment it connects to, and the angle is greater than or equal to 30°.

3. The isolation baffle device according to claim 2, characterized in that, All included angles are greater than or equal to 45°.

4. The isolation baffle device according to claim 3, characterized in that, The included angles are all greater than or equal to 70° and less than or equal to 120°.

5. The isolation baffle device according to claim 2, characterized in that, When one of the ring segments connects multiple injection paths, the multiple injection paths are parallel to each other.

6. The isolation baffle device according to claim 2, characterized in that, The included angles formed by each injection path and the cross-section of the annular segment connected by the injection path are all equal.

7. The isolation baffle device according to claim 1, characterized in that, All injection channels are arranged in a horizontal direction.

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