Semiconductor laser device and method for manufacturing semiconductor laser device

Abstract

A semiconductor laser device (1) includes a base (40), a semiconductor laser element (10), and a joining member (30). The semiconductor laser element (10) includes a substrate (11) and a laminate (SL). The laminate (SL) is arranged opposite the base. A waveguide path extending in a first direction (D1) parallel to a main surface (11s) of the substrate (11) is formed in the laminate (SL). The joining member (30) includes an inner region (30M) joined to the semiconductor laser element (10), and one outer region (30B) and another outer region (30C) arranged outside the inner region (30M). The one outer region (30B) is separated from one side surface (10B) of the semiconductor laser element (10). The another outer region (30C) is separated from another side surface (10C) of the semiconductor laser element (10). A width A of the semiconductor laser element (10) in a second direction (D2) perpendicular to the first direction (D1) and parallel to the main surface (11s) of the substrate (11), a width B of the one outer region (30B), and a width C of the another outer region (30C) satisfy relationships of B ≥ A / 4 and C ≥ A / 4.

Description

Technical Field

[0001] This disclosure relates to a semiconductor laser device and a method for manufacturing a semiconductor laser device. Background Technology

[0002] In recent years, semiconductor laser elements have attracted attention for various applications, including light sources for image display devices such as displays or projectors, light sources for automotive headlights, industrial or residential lighting, and light sources for industrial equipment such as laser welding equipment, thin film annealing equipment, and laser processing equipment. Furthermore, for semiconductor laser elements used as light sources for these applications, there is a high expectation for output significantly exceeding 1 watt and high beam quality.

[0003] As semiconductor laser elements generate higher output power, their heat generation also increases. Therefore, structures are adopted that mount the semiconductor laser element on heat dissipation components such as a substrate with high thermal conductivity (see Patent Document 1). In the semiconductor laser element described in Patent Document 1, an n-type semiconductor layer stacked close to the substrate and a p-type semiconductor layer stacked far from the substrate are used, with one side of the p-type semiconductor layer mounted on the substrate with the junction facing downwards. This allows the active layer to be closer to the substrate than when the substrate side of the semiconductor laser element is mounted on the substrate, thus improving heat dissipation characteristics.

[0004] When a semiconductor laser element is mounted to a heat dissipation component such as a base with the junction facing downwards, the bonding components, such as solder, that join the semiconductor laser element to the base may adhere to the side of the semiconductor laser element, sometimes causing a short circuit between the p-type and n-type semiconductor layers. In the semiconductor laser device described in Patent Document 1, the end of the p-side electrode of the semiconductor laser element is positioned at a predetermined distance from the side of the semiconductor laser element toward the inward side, thereby suppressing the adhesion of bonding components to the side of the semiconductor laser element.

[0005] Existing technical documents

[0006] Patent documents

[0007] Patent Document 1: Japanese Patent Application Publication No. 2010-171047

[0008] However, with the increasing output of semiconductor laser devices, these devices are gradually becoming larger. To ensure the bonding area between the electrodes and bonding components of these larger semiconductor laser devices, there is a tendency to thicken the bonding components. In the semiconductor laser device described in Patent Document 1, the bonding components are also thickened, which makes it possible for the bonding components to protrude near the side of the semiconductor laser device and adhere to the side of the semiconductor laser device. Summary of the Invention

[0009] This disclosure is made to solve such problems, and its purpose is to provide a semiconductor laser device capable of suppressing the adhesion of bonding components to the side of a semiconductor laser element.

[0010] To address the aforementioned issues, in one embodiment of the semiconductor laser device disclosed herein, the semiconductor laser device comprises: a base; a semiconductor laser element; and a bonding member for bonding the base to the semiconductor laser element. The semiconductor laser element has a substrate and a laminate stacked on the main surface of the substrate, the laminate being configured opposite to the base. The laminate has a first conductivity semiconductor layer, an active layer, and a second conductivity semiconductor layer sequentially stacked on the substrate. A waveguide extending in a first direction is formed in the laminate, the first direction being parallel to the main surface of the substrate. In a cross-section perpendicular to the first direction, the bonding member has an internal region for bonding with the semiconductor laser element, and a region disposed within the internal region... The region consists of one outer region and another outer region, one outer region being disposed on one side of the semiconductor laser element relative to the inner region, and the other outer region being disposed on the other side of the semiconductor laser element relative to the inner region. The one outer region includes a region disposed on the outer side of the one side, and the other outer region includes a region disposed on the outer side of the other side. The one outer region is separate from the one side of the semiconductor laser element. The width A of the semiconductor laser element, the width B of the one outer region, and the width C of the other outer region in a second direction perpendicular to the first direction and parallel to the main surface of the substrate satisfy the relationships B≥A / 4 and C≥A / 4.

[0011] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the width A of the semiconductor laser element, the width B of one external region, and the width C of the other external region may satisfy at least one of the relationships B≥A / 2 and C≥A / 2.

[0012] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the width B of one outer region may be equal to the width C of the other outer region.

[0013] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the average thickness of the bonding component may be less than 3.5 μm.

[0014] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the distance from the location where the thickness of the bonding member in the inner region is the greatest to the other side is smaller than the distance to the other side, with respect to the location where the thickness of the bonding member is the greatest, the maximum thickness t3 of the bonding member in the inner region and the thickness t4 of the flat portion of the bonding member in the other outer region satisfying the relationship t4≤t3.

[0015] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the minimum thickness of the bonding member in the inner region may be such that the distance from the minimum thickness location to one side is smaller than the distance to the other side, and the minimum thickness t1 of the bonding member in the inner region and the thickness t2 of the flat portion of the bonding member in one of the outer regions satisfy the relationship t2≤t1.

[0016] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the surface of the portion disposed between the semiconductor laser element and the base may be concave or flat, which may be the surface of at least one of the outer regions of the one and the other.

[0017] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the semiconductor laser element may have a stepped portion formed at an end of at least one of the two sides near the base, wherein the semiconductor laser element is separate from the bonding member in the stepped portion.

[0018] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the semiconductor laser element may have a first step portion and a second step portion, the first step portion being formed at one end of one side near the base, and the second step portion being formed at one end of the other side near the base. In the first step portion and the second step portion, the semiconductor laser element is separate from the bonding member. The maximum thickness t13 of the bonding member in one external region and the distance t12 between the first step portion and the base-side surface of the bonding member satisfy the relationship t13≤t12. The maximum thickness t17 of the bonding member in the other external region and the distance t16 between the second step portion and the base-side surface of the bonding member satisfy the relationship t17≤t16.

[0019] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the maximum thickness t15 of the bonding member in the internal region, the minimum thickness t11 of the bonding member in the internal region, the maximum thickness t13 of the bonding member in one of the external regions, and the maximum thickness t17 of the bonding member in the other external region may satisfy at least one of the relationships t13≤t11×4 and t17≤t15×4.

[0020] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the maximum thickness t15 of the bonding member in the internal region, the minimum thickness t11 of the bonding member in the internal region, the maximum thickness t13 of the bonding member in one of the external regions, and the maximum thickness t17 of the bonding member in the other external region may satisfy at least one of the relationships t13≤t11×2 and t17≤t15×2.

[0021] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the semiconductor laser element may have a first stepped portion and a second stepped portion, the first stepped portion being formed at one end of one side near the base, and the second stepped portion being formed at one end of the other side near the base. In both the first and second stepped portions, the semiconductor laser element is separate from the bonding member. The thickness of the bonding member is greatest in the internal region, and the distance from this location to the other side is greater than the distance to the first side. Furthermore, regarding the position where the thickness of the joining member in the inner region is minimum, the distance from the position of minimum thickness to one side is smaller than the distance to the other side. The maximum thickness t15 of the joining member in the inner region, the minimum thickness t11 of the joining member in the inner region, the thickness t14 of the joining member at the outer edge of one outer region, and the thickness t18 of the joining member at the outer edge of the other outer region, at least satisfy one of the relationships t11≥t14 / 1.5 and t15≥t18 / 1.5.

[0022] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the semiconductor laser element may have an insulating layer disposed between the laminate and the bonding member, the insulating layer being separate from the bonding member at both ends of the semiconductor laser element in the second direction.

[0023] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the semiconductor laser element may have a front end face that emits laser light in the first direction and a rear end face opposite to the front end face. The front end face is configured such that it is located outside the base relative to the outer edge of the base in the first direction.

[0024] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the rear end face may be positioned such that it is located inside the base relative to the outer edge of the base in the first direction, and the joining member is disposed between the rear end face and the outer edge of the base, wherein the joining member is separate from the rear end face.

[0025] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the thickness t5 in the flat portion of the joining member disposed between the rear end face and the outer edge of the base, and the thickness t6 of the joining member at a position from the rear end face toward the inward side and at a distance from the rear end face equal to the width A of the semiconductor laser element, satisfy the relationship t5≤t6.

[0026] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the distance t22 between the rear end face and the base side surface of the bonding member, and the maximum thickness t23 of the bonding member disposed between the rear end face and the outer edge of the base, satisfy the relationship t23≤t22.

[0027] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the maximum thickness t21 of the bonding member located in the first direction at a position that is the same as the width A of the semiconductor laser element and is located from the rear end face toward the inward side and at a distance from the rear end face, and the maximum thickness t23 of the bonding member disposed between the rear end face and the outer edge of the base, satisfy the relationship t23≤t21×4.

[0028] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the maximum thickness t21 of the bonding member located in the first direction at a position that is the same as the width A of the semiconductor laser element and is located from the rear end face toward the inward side and at a distance from the rear end face, and the maximum thickness t23 of the bonding member disposed between the rear end face and the outer edge of the base, satisfy the relationship t23≤t21×2.

[0029] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the maximum thickness t21 of the bonding member located in the first direction at a position that is the same as the width A of the semiconductor laser element and is located from the rear end face toward the inside and at a distance from the rear end face, and the thickness t24 of the outer edge of the bonding member disposed between the rear end face and the outer edge of the base, satisfy the relationship t21≥t24 / 1.5.

[0030] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the distance D between the rear end face and the outer edge of the joining member disposed between the rear end face and the outer edge of the base in the first direction, and the width A of the semiconductor laser element, may satisfy the relationship D≥A / 4.

[0031] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the distance D between the rear end face and the outer edge of the joining member disposed between the rear end face and the outer edge of the base in the first direction, and the width A of the semiconductor laser element, may satisfy the relationship D≥A / 2.

[0032] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the semiconductor laser element may have an insulating layer disposed between the laminate and the bonding member, wherein the insulating layer is separate from the bonding member at one end of the semiconductor laser element in the first direction near the rear end face.

[0033] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the base may have: a metal electrode film electrically connected to the bonding member; and a barrier layer disposed between the electrode film and the bonding member.

[0034] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the area S1 of the barrier layer and the area S2 of the bonding member in contact with the base may satisfy the relationship S1≥S2.

[0035] Furthermore, in one embodiment of the semiconductor laser device disclosed herein, the base may have: a first abutment; and a bonding layer disposed between the first abutment and the electrode film.

[0036] In addition, in one aspect of the method for manufacturing a semiconductor laser device according to the present disclosure, the manufacturing method includes the following steps: a step of preparing a base, the base being a base having an electrode film and a bonding member laminated above the electrode film; a step of disposing a semiconductor laser element on the bonding member; a first heating step of heating the base after the step of disposing the semiconductor laser element to melt the bonding member; a first cooling step of lowering the temperature of the base after the first heating step; a second heating step of heating the base after the first cooling step; and a second cooling step of lowering the temperature of the base after the second heating step.

[0037] In addition, in one aspect of the method for manufacturing a semiconductor laser device according to the present disclosure, when the melting point of the bonding member is set to Tm, the peak temperature in the first heating step is set to the first peak temperature T1, and the peak temperature in the second heating step is set to the second peak temperature T2, the relationship of Tm < T1 < T2 may be satisfied.

[0038] According to the present disclosure, it is possible to provide a semiconductor laser device or the like that can suppress the bonding member from adhering to the side surface of the semiconductor laser element. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 It is a schematic cross-sectional view showing a cross-section perpendicular to the first direction of the semiconductor laser device in Embodiment 1.

[0040] Figure 2 It is a schematic cross-sectional view showing a cross-section perpendicular to the second direction of the semiconductor laser device in Embodiment 1.

[0041] Figure 3 It is a schematic cross-sectional view showing the overall structure of the semiconductor laser element in Embodiment 1.

[0042] Figure 4 It is a schematic diagram showing the relationship between the width of one outer region of the bonding member and the maximum thickness of the bonding member in one outer region in the comparative example and Embodiment 1.

[0043] Figure 5 It is a flowchart showing the process of the method for manufacturing a semiconductor laser device in Embodiment 1.

[0044] Figure 6 It is a schematic cross-sectional view showing the step of disposing a semiconductor laser element in the method for manufacturing a semiconductor laser device in Embodiment 1.

[0045] Figure 7This is a schematic cross-sectional view showing the state after the first heating step in the manufacturing method of the semiconductor laser device in Embodiment 1.

[0046] Figure 8 This is a schematic cross-sectional view showing the state after the second cooling process in the manufacturing method of the semiconductor laser device in Embodiment 1.

[0047] Figure 9 This is a schematic cross-sectional view showing a section perpendicular to the first direction of the semiconductor laser device in Embodiment 2.

[0048] Figure 10 This is a schematic cross-sectional view showing a section perpendicular to the second direction of the semiconductor laser device in Embodiment 2.

[0049] Figure 11 This is a schematic cross-sectional view showing a section perpendicular to the first direction of the semiconductor laser device in Embodiment 3.

[0050] Figure 12 This is a schematic cross-sectional view showing the overall structure of the semiconductor laser element in Embodiment 3. Detailed Implementation

[0051] The following description describes embodiments of the present disclosure with reference to the accompanying drawings. Furthermore, the embodiments described below are specific examples of the present disclosure. Therefore, the values, shapes, materials, constituent elements, arrangement positions of constituent elements, and connection methods shown in the following embodiments are merely examples and are not intended to limit the scope of the present disclosure.

[0052] Furthermore, the figures are schematic diagrams, not rigorous illustrations. Therefore, the scales and other parameters may not be consistent across the figures. Additionally, substantially identical components are given the same symbols across the figures, and repetitive descriptions are omitted or simplified.

[0053] Furthermore, in this specification, the terms "above" and "below" do not refer to the absolute spatial orientation of upward (vertically above) and downward (vertically below), but rather to the relative positional relationship defined by the stacking order in a layered structure. Moreover, the terms "above" and "below" apply not only to situations where two constituent elements are arranged with gaps between them, or where other constituent elements exist between them, but also to situations where two constituent elements are arranged in a state of contact with each other.

[0054] (Implementation Method 1)

[0055] The semiconductor laser device and its manufacturing method according to Embodiment 1 will be described.

[0056] [1-1. Overall Structure]

[0057] Firstly, regarding the overall structure of the semiconductor laser device involved in this embodiment, Figure 1 as well as Figure 2 Please provide an explanation. Figure 1 as well as Figure 2 Each of the shown sections represents a schematic cross-sectional view of the semiconductor laser device 1 in this embodiment, perpendicular to the first direction D1 and the second direction D2. Figure 2 The middle shows along Figure 1 The cross section of line II-II.

[0058] like Figure 1 as well as Figure 2 As shown, the semiconductor laser device 1 includes a base 40, a semiconductor laser element 10, and a bonding member 30 for bonding the base 40 and the semiconductor laser element 10.

[0059] The semiconductor laser element 10 is a component bonded to the main surface of the base 40 and emitting laser light. The overall structure of the semiconductor laser element 10 is described below using… Figure 3 To explain. Figure 3 This is a schematic cross-sectional view showing the overall structure of the semiconductor laser element 10 in this embodiment. Figure 3 The image shows a cross section of the semiconductor laser element 10 perpendicular to the first direction D1.

[0060] like Figure 3 As shown, the semiconductor laser element 10 has a substrate 11 and a laminate SL. In this embodiment, the semiconductor laser element 10 has an insulating layer 15, a p-side contact electrode 16, a p-side electrode 17, and an n-side electrode 19. Figure 1 as well as Figure 2 As shown, the semiconductor laser element 10 is configured as a stack SL opposite to the base 40, and the p-side electrode 17 is electrically connected to the base 40. In other words, the semiconductor laser element 10 is mounted on the base 40 with the junction facing downwards.

[0061] A waveguide path extending in a first direction D1, parallel to the main surface 11s of the substrate 11, is formed in the laminate SL. For example... Figure 2As shown, the semiconductor laser element 10 has a front end surface 10F that emits laser light in a first direction D1, and a rear end surface 10R opposite to the front end surface 10F. The front end surface 10F and the rear end surface 10R constitute the resonator of the semiconductor laser element 10. The size of the semiconductor laser element 10 in the first direction D1 corresponds to the resonator length L. The resonator length L is, for example, approximately 1 mm or more and 10 mm or less. In this embodiment, the resonator length L is 1.2 mm. The front end surface 10F of the semiconductor laser element 10 is positioned such that it is located outside the base 40 relative to the outer edge of the base 40 in the first direction D1. In other words, the front end surface 10F of the semiconductor laser element 10 protrudes from the edge of the base 40 to the outside of the base 40 in the first direction D1. Therefore, interference between the laser light emitted from the front end surface 10F and the base 40 can be suppressed.

[0062] Figure 1 The width A of the semiconductor laser element 10 shown represents the size of the semiconductor laser element 10 in the second direction D2, which is perpendicular to the first direction D1 and parallel to the main surface 11s of the substrate 11. Furthermore, Figures 1-3 The third direction D3 shown is perpendicular to both the first direction D1 and the second direction D2. The width A of the semiconductor laser element 10 is, for example, approximately 0.1 mm or more and 3 mm or less. In this embodiment, the width A of the semiconductor laser element 10 is 0.15 mm.

[0063] In addition, such as Figure 3 As shown, the semiconductor laser element 10 of this embodiment has a stepped portion 11b formed on its side 10B and a stepped portion 11c formed on its side 10C. The stepped portion 11b is an example of a first stepped portion formed at one end of one side 10B of the semiconductor laser element 10 near the base 40. The stepped portion 11c is an example of a second stepped portion formed at one end of the other side 10C of the semiconductor laser element 10 near the base 40. The stepped portions 11b and 11c are parts of a separation groove extending in the first direction D1, formed during the slicing of the semiconductor laser element 10. Each stepped portion is a portion recessed from each side towards the second direction D2.

[0064] Next, utilize Figure 3 The various components of the semiconductor laser element 10 will be explained.

[0065] The substrate 11 is a plate-shaped component that serves as the base for the semiconductor laser element 10. In this embodiment, the substrate 11 is a semiconductor substrate formed of n-type GaN.

[0066] The stacked structure SL is a semiconductor stacked structure stacked on the main surface 11s of the substrate 11. In this embodiment, the stacked structure SL has an n-type semiconductor layer 12, an active layer 13, and a p-type semiconductor layer 14 sequentially stacked on the substrate 11. The stacked structure SL may also further have layers other than these. Two trench portions 10t extending in the first direction D1 are formed in the stacked structure SL. The trench portions 10t extend at least from the p-type semiconductor layer 14 to the n-type semiconductor layer 12 of the stacked structure SL. A ridge portion 10s is formed between the two trench portions 10t. Current is supplied to the ridge portion 10s, and the active layer 13 in the ridge portion 10s emits light. Furthermore, a waveguide path is formed in the region including the ridge portion 10s.

[0067] The n-type semiconductor layer 12 is an example of a first conductivity type semiconductor layer stacked above the main surface 11s of the substrate 11. In this embodiment, the n-type semiconductor layer 12 includes at least an n-type cladding layer. Additionally, the n-type semiconductor layer 12 may include a buffer layer disposed between the substrate 11 and the n-type cladding layer, and an n-side guiding layer disposed between the n-type cladding layer and the active layer 13. In this embodiment, the n-type semiconductor layer 12 is formed of an n-type nitride semiconductor such as n-type AlGaN.

[0068] The active layer 13 is a light-emitting layer stacked above the n-type semiconductor layer 12. In this embodiment, the active layer 13 is a quantum well active layer formed of a nitride semiconductor.

[0069] The p-type semiconductor layer 14 is an example of a second conductivity type semiconductor layer disposed above the active layer 13. In this embodiment, the p-type semiconductor layer 14 includes at least a p-type cladding layer. Additionally, the p-type semiconductor layer 14 may include a contact layer disposed between the p-type cladding layer and the p-side contact electrode 16, and a p-side guiding layer disposed between the p-type cladding layer and the active layer 13. In this embodiment, the p-type semiconductor layer 14 is formed of a p-type nitride semiconductor such as p-type AlGaN.

[0070] The insulating layer 15 is a layer that electrically insulates the p-side electrode 17 from the laminate SL. The insulating layer 15 can function to enclose light within the ridge portion 10s. In this embodiment, the insulating layer 15 is disposed between the laminate SL and the p-side electrode 17. The insulating layer 15 continuously covers the surface of the laminate SL from the side of the ridge portion 10s up to the steps 11b and 11c. An opening is provided in the upper part of the ridge portion 10s, and the ridge portion 10s and the p-side electrode 17 are connected via a p-side contact electrode 16 disposed in the opening of the insulating layer 15. Figure 1As shown, the insulating layer 15, at both ends in the second direction D2 of the semiconductor laser element 10, is separate from the bonding member 30. Furthermore, as... Figure 2 As shown, the outer edges of the ridge portion 10s on the front end face 10F side and the rear end face 10R side are covered by the insulating layer 15. At the outer edges of the front end face 10F side and the rear end face 10R side, the insulating layer 15 is exposed from the p-side contact electrode 16 and the p-side electrode 17, with the ends of the p-side contact electrode 16 and the p-side electrode 17 extending above the insulating layer 15. The ends of the p-side contact electrode 16 and the p-side electrode 17 are separate from the front end face 10F and the rear end face 10R. Furthermore, the insulating layer 15 is exposed from the p-side contact electrode 16 and the p-side electrode 17 at the outer edges of the semiconductor laser element 10 on the front end face 10F side and the rear end face 10R side, and also at the stepped portions 11b and 11c, from the p-side electrode 17. Additionally, at one end of the insulating layer 15 in the first direction D1 of the semiconductor laser element 10 near the rear end face 10R, it is separate from the bonding member 30. As the insulating layer 15, for example, a SiO2 film, a SiN film, etc. can be used.

[0071] The p-side contact electrode 16 is an example of a second conductive side contact electrode that makes resistive contact with the second conductive semiconductor layer. In this embodiment, the p-side contact electrode 16 is an electrode that makes resistive contact with the p-type semiconductor layer 14. The p-side contact electrode 16 is disposed within the opening of the insulating layer 15 and contacts the upper part of the ridge portion 10s. As the p-side contact electrode 16, for example, a Pd and Pt laminate film, or a Pd, Ti, and Pt laminate film sequentially stacked on the p-type semiconductor layer 14, can be used.

[0072] The p-side electrode 17 is an electrode electrically connected to the p-type semiconductor layer 14 via the p-side contact electrode 16. The p-side electrode 17 covers the upper surface of the insulating layer 15 except for the outer edge of the insulating layer 15. In other words, the p-side electrode 17 is not disposed on the outer edge of the front end face 10F side and the outer edge of the rear end face 10R side of the ridge portion 10s. Furthermore, it is not disposed on the stepped portions 11b and 11c of the semiconductor laser element 10. In this embodiment, the p-side electrode 17 is, for example, a single-layer film such as a Ti film, or a stacked film of Ti and Pt sequentially stacked on the p-side contact electrode 16, or a stacked film of Ti, Pt, Au, and Pt. In addition, an Au film may be further formed on the outermost layer of the p-side electrode 17. The Au film formed on the outermost layer is sometimes integrated with a bonding member 30 made of AuSn or the like, which is bonded to the p-side electrode 17. In such cases, the Au film integrated with the bonding member 30 can be considered as part of the bonding member 30.

[0073] The n-side electrode 19 is an electrode formed on the back side of the main surface of the substrate 11, on which the laminate SL is stacked. As the n-side electrode 19, for example, a laminate of Ti and Au stacked sequentially on the substrate 11 can be used.

[0074] Furthermore, the structures of each electrode, including the p-side contact electrode 16, the p-side electrode 17, and the n-side electrode 19, are not limited to the structures described above. For example, each electrode may be a laminated film or alloy film comprising at least one of C, N, Co, Cu, Ag, Ir, Sc, Au, Cr, Mo, La, W, Al, Tl, Y, La, Ce, Pr, Nd, Sm, Eu, Tb, Ti, Zr, Hf, V, Nb, Ta, Pt, and Ni.

[0075] The base 40 is a platform that is bonded to the semiconductor laser element 10. The base 40 functions as a heat sink to dissipate heat generated by the semiconductor laser element 10. In this embodiment, the base 40 has a plate-like shape. Figure 1 as well as Figure 2 It is indicated that the base 40 has a first base 41, a close-fitting layer 42, an electrode film 43, and a barrier layer 44.

[0076] The first base 41 is a main component of the base 40. In this embodiment, the first base 41 has a rectangular plate shape. As the first base 41, a ceramic substrate, polycrystalline substrate, or single-crystal substrate made of materials such as alumina, AlN, SiC, or diamond can be used.

[0077] The bonding layer 42 is a layer disposed between the first substrate 41 and the electrode film 43. For example, a single-layer film such as a Ti film, or a laminated film of Ti and Pt sequentially stacked on the first substrate 41, can be used as the bonding layer 42. However, the composition of the bonding layer 42 is not limited to these; it can be a laminated film or an alloy film similar to the p-side contact electrode 16 described above.

[0078] The electrode film 43 is a metal film electrically connected to the bonding member 30. The electrode film 43 functions as an electrode of the base 40. For example, Au can be used as the electrode film 43. Therefore, wires made of Au can be easily connected to the electrode film 43.

[0079] The barrier layer 44 is a metallic layer disposed between the electrode film 43 and the bonding member 30. The barrier layer 44 is connected to the bonding member 30. The barrier layer 44 is formed of a material with low wettability to the bonding member 30, which is formed from solder or the like, and has the function of suppressing contact between the bonding member 30, which melts due to heating, and the electrode film 43. The area S1 of the barrier layer 44 and the area S2 of the bonding member 30 in contact with the base 40 satisfy the relationship S1 ≥ S2. Therefore, it is possible to suppress contact between the bonding member 30, which melts due to heating, and the electrode film 43.

[0080] For example, Pt can be used as the barrier layer 44. However, the composition of the barrier layer 44 is not limited to this, and it can be a laminate or alloy film that includes at least one of Ti, Pt, Ni, Cr, Co, Ru, and W.

[0081] The bonding component 30 is the component that bonds the base 40 to the semiconductor laser element 10. For example... Figure 1As shown, in a cross-section perpendicular to the first direction D1, the bonding member 30 has an inner region 30M that bonds to the semiconductor laser element 10, an outer region 30B disposed outside the inner region 30M, and another outer region 30C. The outer region 30B is disposed on one side 10B of the semiconductor laser element 10 relative to the inner region 30M, and the other outer region 30C is disposed on the other side 10C of the semiconductor laser element 10 relative to the inner region 30M. In other words, the outer region 30B is the region disposed outside the inner region 30M that is closer to the side 10B of the semiconductor laser element 10, and the outer region 30C is the region disposed outside the inner region 30M that is closer to the side 10C of the semiconductor laser element 10. One outer region 30B of the bonding member 30, in the second direction D2, includes a region disposed on the outer side of one side 10B of the semiconductor laser element 10 and a region disposed on the inner side of one side 10B of the semiconductor laser element 10 between the semiconductor laser element 10 and the base 40. The other outer region 30C, in the second direction D2, includes a region disposed on the outer side of the other side 10C of the semiconductor laser element 10 and a region disposed on the inner side of the other side 10C of the semiconductor laser element 10 between the semiconductor laser element 10 and the base 40. The region where the bonding member 30 is bonded to the semiconductor laser element 10 generally coincides with the region where the p-side electrode 17 is formed. The bonding member 30 is separated from the insulating layer 15 exposed from the p-side electrode 17 on the front end face 10F side and the rear end face 10R side of the semiconductor laser element 10. Furthermore, the stepped portions 11b and 11c of the semiconductor laser element 10 are also separated from the insulating layer 15 exposed from the p-side electrode 17. The bonding component 30 is formed, for example, from AuSn solder. However, the bonding component 30 is not limited to AuSn solder; it can also be solder such as AgSn solder or SAC solder, or a conductive paste other than solders such as Au nanoparticles or Ag nanoparticles. Detailed configuration of the bonding component 30 will be described later.

[0082] [1-2. Functions and Effects]

[0083] Next, the function and effects of the semiconductor laser device 1 according to this embodiment will be compared with those of a comparative example. Figures 1-4 To explain.

[0084] In the semiconductor laser device 1 of this embodiment, in the second direction D2, the width A of the semiconductor laser element 10, the width B of one outer region 30B of the bonding member 30, and the width C of the other outer region 30C satisfy the relationships B≥A / 4 and C≥A / 4.

[0085] Here, the relationship between the widths of the outer regions 30B and 30C of the bonding member 30 of the semiconductor laser device 1 and the shape of the bonding member 30 is determined by utilizing... Figure 4 To explain. Figure 4 This is a schematic diagram showing the relationship between the width B of one outer region 30B of the joining member 30 in the comparative example and this embodiment and the maximum thickness of the joining member 30 in one outer region 30B. Figure 4 Cross-sectional view (a) shows a comparative example, and cross-sectional views (b) and (c) show an example of this embodiment and another example. Figure 4 In the comparative example shown in cross-sectional view (a), the lower surface of the semiconductor laser element 10 (in other words, the surface opposite to the base 40) is integrally joined to the bonding member 30. Therefore, the outer region 30B is defined as the region located on the outer side relative to the side of the semiconductor laser element 10. However, in order to... Figure 4 By comparing the width B of the external region 30B involved in this embodiment as shown in cross-sectional views (b) and (c), Figure 4 In the comparative example (a), the width B is considered as the region located on the outside of the stepped portion 11b of the semiconductor laser element 10. Hereinafter, the width B and the width C are assumed to be of the same degree, and only the relationship between the width B and the maximum thickness of the bonding member 30 in one of the outer regions 30B will be explained.

[0086] exist Figure 4 The cross-sectional view (a) shows the width B of the outer region 30B, in B Figure 4 The cross-sectional view (b) shows the shape of the outer region 30B with respect to the width B, provided that B ≥ A / 4. Figure 4 The cross-sectional view (c) shows the shape of the outer region 30B when the width B is greater than that shown in the cross-sectional view (b).

[0087] Figure 4 The bonding member 30, shown in the cross-sectional diagrams, melts due to heating when bonded to the semiconductor laser element 10. Furthermore, a load is applied to the semiconductor laser element 10 to increase the contact area between the semiconductor laser element 10 and the bonding member 30. Consequently, the semiconductor laser element 10 is pressed against the base 40. At this time, a portion of the bonding member 30, disposed between the semiconductor laser element 10 and the base 40, is pushed against the outer region 30B (and outer region 30C). Assuming... Figure 4 ​In each cross-sectional view, when the thickness of the bonding member 30 before bonding with the semiconductor laser element 10 is the same, the bonding member 30 is pushed into the outer region 30B by the same amount in each cross-sectional view. Therefore, the narrower the width of the outer region 30B, the greater the maximum thickness of the bonding member 30 in the outer region 30B. Figure 4 As shown in the cross-sectional view (a), when the width B is narrow, the maximum thickness of the bonding member 30 in the outer region 30B is greater than the distance from the base 40 to the side surface 10B of the semiconductor laser element 10, and the bonding member 30 is attached to the side surface 10B. Furthermore, the bonding member 30 is formed only in the region where the barrier layer 44 is formed, directly contacting the barrier layer 44. Therefore, the outer edge of the outer region 30B in the second direction D2 is approximately aligned with the outer edge of the barrier layer 44. The bonding member 30 is not directly contacted with the electrode film 43.

[0088] On the other hand, such as Figure 4 As shown in cross-sectional view (b), regarding the width B, when B ≥ A / 4, the bonding member 30 pushed towards the outer region 30B is dispersed in the width direction (in other words, the second direction D2). Therefore, the maximum thickness of the bonding member 30 in the outer region 30B is smaller than the distance from the base 40 to the side surface 10B of the semiconductor laser element 10. Consequently, the outer region 30B is separated from the side surface 10B of the semiconductor laser element 10. In other words, a gap gB is formed between the side surface 10B and the outer region 30B of the bonding member 30. Thus, it is possible to suppress the bonding member 30 from adhering to the side surface 10B of the semiconductor laser element 10.

[0089] exist Figure 4 The width B in cross-sectional view (c) is larger than the width B in cross-sectional view (b), so the maximum thickness of the bonding member 30 in the outer region 30B is further reduced. This further suppresses the bonding member 30 from adhering to the side surface 10B of the semiconductor laser element 10.

[0090] In addition, such as Figure 1 As shown, the outer region 30C also has the same configuration as the outer region 30B. In other words, the other outer region 30C is separate from the other side 10C of the semiconductor laser element 10. In other words, a gap gC is formed between the other side 10C and the other outer region 30C of the bonding member 30. Thus, it is possible to prevent the bonding member 30 from adhering to the other side 10C of the semiconductor laser element 10.

[0091] As described above, in this embodiment, the bonding member 30 can be prevented from attaching to the sides 10B and 10C of the semiconductor laser element 10, so the short circuit between the p-type semiconductor layer 14 and the n-type semiconductor layer 12 caused by the bonding member 30 can be suppressed.

[0092] Furthermore, the width A of the semiconductor laser element 10, the width B of one external region 30B, and the width C of the other external region 30C must satisfy at least one of the following relationships: B ≥ A / 2 and C ≥ A / 2. This allows for a further reduction in the maximum thickness of the bonding member 30 in each external region, thus further suppressing the bonding member 30 from adhering to the side 10B of the semiconductor laser element 10.

[0093] Furthermore, the width A of the semiconductor laser element 10, the width B of one external region 30B, and the width C of the other external region 30C can satisfy the relationships B≤2A and C≤2A. This helps to suppress the enlargement of the semiconductor laser device 1. Furthermore, the width A of the semiconductor laser element 10, the width B of one external region 30B, and the width C of the other external region 30C can satisfy the relationships B≤A and C≤A. This further helps to suppress the enlargement of the semiconductor laser device 1.

[0094] Furthermore, the width B of one outer region 30B can be equal to the width C of the other outer region 30C. Here, "width B equal to width C" means not only that width B and width C are exactly the same, but also that width B and width C are practically equal. For example, "width B equal to width C" means that the difference between width B and width C is less than 10% of width B. This equality of width B and width C allows the maximum thickness of the bonding member 30 in both outer regions 30B and 30C to be the same. Therefore, it is possible to suppress the thickening of the bonding member 30 in either outer region 30B or 30C, thus suppressing the adhesion of the bonding member 30 to either side 10B or 10C of the semiconductor laser element 10.

[0095] Furthermore, in at least one of the surfaces of the outer regions 30B and 30C of the bonding member 30, the surface of the portion disposed between the semiconductor laser element 10 and the base 40 is either concave or flat. In this embodiment, as... Figure 1 As shown, the surfaces of the portions of one outer region 30B and the other outer region 30C of the bonding member 30 disposed between the semiconductor laser element 10 and the base 40 are both concave.

[0096] Furthermore, in this embodiment, the average thickness of the bonding member 30 can be smaller than 3.5 μm. The average thickness of the bonding member 30 is equal to its thickness before the semiconductor laser element 10 is disposed on the bonding member 30. This reduces the average thickness of the bonding member 30, thereby reducing its thermal resistance and improving heat dissipation characteristics from the semiconductor laser element 10 to the base 40. Furthermore, by reducing the average thickness of the bonding member 30, adhesion of the bonding member 30 to the various sides of the semiconductor laser element 10 can be suppressed. Moreover, the average thickness of the bonding member 30 can be smaller than 0.3% of the resonator length L of the semiconductor laser element 10. Furthermore, the average thickness of the bonding member 30 can be smaller than 3% of the width A of the semiconductor laser element 10.

[0097] Furthermore, in this embodiment, the average thickness of the bonding member 30 can be greater than 2.0 μm. If the thickness of the bonding member 30 is too small, the bonding member 30 cannot be fully extended on the bonding surface of the semiconductor laser element 10, thereby reducing the bonding area between the bonding member 30 and the semiconductor laser element 10. However, by setting the average thickness of the bonding member 30 to be greater than 2.0 μm, it is possible to suppress the reduction in the bonding area between the semiconductor laser element 10 and the bonding member 30. Therefore, it is possible to suppress the increase in thermal resistance between the semiconductor laser element 10 and the bonding member 30 due to the reduction in the bonding area. Furthermore, the average thickness of the bonding member 30 can be greater than 0.05% of the resonator length L of the semiconductor laser element 10. Furthermore, the average thickness of the bonding member 30 can be greater than 0.4% of the width A of the semiconductor laser element 10.

[0098] Furthermore, the average thickness of the bonding component 30 can be adjusted according to the dimensions of the semiconductor laser element 10. For example, the resonator length L [μm] of the semiconductor laser element 10 and the average thickness ts of the bonding component 30 can satisfy ts < 2.0 + 0.5 × (L / 800). Thus, the thickness of the bonding component 30 can be optimized according to the dimensions of the semiconductor laser element 10.

[0099] Furthermore, in this embodiment, such as Figure 1As shown, the thickness t2 of the flat portion in one outer region 30B and the thickness t4 of the flat portion in the other outer region 30C can be less than or equal to the maximum thickness t3 of the joining member 30 in the inner region 30M. Here, "flat portion" refers to the portion where the surface of each outer region (in other words, the back side surface of the face of the joining member 30 opposite to the base 40) is parallel to the main surface of the base 40. Furthermore, "parallel" not only means that the main surface of the base 40 and the surface of the joining member 30 are completely parallel, but also that they are substantially parallel. For example, parallel means that the angle formed by the main surface of the base 40 and the surface of the joining member 30 is 2° or less. Additionally, the thickness of the flat portion of each outer region can be defined by the thickness of the central portion of each outer region in the second direction D2.

[0100] By setting the thickness of the flat portion in each outer region to below the maximum thickness of the inner region 30M, the thickness of the bonding member 30 in the inner region 30M can be sufficiently ensured, and the thickness of the bonding member 30 in each outer region can be reduced. Therefore, the bonding area between the semiconductor laser element 10 and the bonding member 30 can be ensured, while the adhesion of the bonding member 30 to each side of the semiconductor laser element 10 can be suppressed.

[0101] Furthermore, the semiconductor laser element 10 can be configured to be tilted relative to the main surface of the base 40. For example, regarding the position where the thickness of the bonding member 30 in the inner region 30M is the greatest, the distance from the position of greatest thickness to the other side 10C of the semiconductor laser element 10 can be smaller than the distance from the position of greatest thickness to one side 10B of the semiconductor laser element 10. In this case, the maximum thickness t3 of the inner region 30M and the thickness t4 of the flat portion of the bonding member 30 in the outer region 30C can satisfy the relationship t4≤t3. Even in such a configuration, by setting the thickness t4 of the flat portion in the outer region 30C to be less than or equal to the maximum thickness t3 of the inner region 30M, it is possible to ensure the bonding area between the semiconductor laser element 10 and the bonding member 30 while suppressing the adhesion of the bonding member 30 in the outer region 30C to the side 10C of the semiconductor laser element 10.

[0102] Furthermore, regarding the position where the thickness of the bonding member 30 in the inner region 30M is minimized, the distance from this minimum thickness position to one side 10B of the semiconductor laser element 10 can be smaller than the distance from this minimum thickness position to the other side 10C of the semiconductor laser element 10. In this case, the minimum thickness t1 of the inner region 30M and the thickness t2 of the flat portion of the bonding member 30 in one of the outer regions 30B can satisfy the relationship t2 ≤ t1. Even in such a configuration, by setting the thickness t2 of the flat portion in the outer region 30B to be less than or equal to the minimum thickness t1 of the inner region 30M, it is possible to ensure the bonding area between the semiconductor laser element 10 and the bonding member 30 while suppressing the adhesion of the bonding member 30 in the outer region 30B to the side 10B of the semiconductor laser element 10.

[0103] In addition, such as Figure 3 As shown, the semiconductor laser element 10 has a stepped portion formed at at least one end of one side 10B and the other side 10C, near the base 40. In the stepped portion, the semiconductor laser element 10 and the bonding member 30 can be separated. In the stepped portion, a portion of the insulating layer 15, continuously disposed from the side of the ridge portion 10s, is exposed from the p-side electrode 17, and the bonding member 30 is separated from the insulating layer 15 disposed in the stepped portion. In this embodiment, the p-side electrode 17 is formed only on the upper surface of the laminate SL and not on the side of the laminate SL, i.e., the stepped portion.

[0104] In this embodiment, stepped portions 11b and 11c are formed on one side 10B and the other side 10C, respectively. By forming stepped portions 11b and 11c on the semiconductor laser element 10, the distance from the surface of the bonding member 30 to each side of the semiconductor laser element 10 is increased, thus suppressing the bonding member 30 from adhering to each side of the semiconductor laser element 10.

[0105] In addition, such as Figure 2 As shown, the rear end face 10R of the semiconductor laser element 10 is disposed on the outer edge of the base 40 in the first direction D1. Figure 2The right end of the base 40 shown is located inside the base 40, and the bonding member 30 is disposed between the rear end face 10R and the outer edge of the base 40. In the outer edge of the rear end face 10R side of the semiconductor laser element 10, the insulating layer 15 is disposed such that it exposes from the p-side contact electrode 16 and the p-side electrode 17. The p-side electrode 17 is disposed throughout the upper surface of the laminate SL, except for the stepped portions 11b and 11c of the semiconductor laser element 10, the outer edge of the front end face 10F side, and the outer edge of the rear end face 10R side. The bonding member 30 is bonded to the p-side electrode 17 but not to the insulating layer 15. Therefore, the bonding member 30 is separate from the insulating layer 15 at the outer edge of the rear end face 10R side, and the bonding member 30 is separate from the rear end face 10R of the semiconductor laser element 10. In other words, a gap gR is formed between the rear end face 10R and the bonding member 30. Therefore, it is possible to suppress the attachment of the bonding member 30, which is located on the outside of the rear end face 10R of the semiconductor laser element 10, to the rear end face 10R of the semiconductor laser element 10.

[0106] Furthermore, the thickness t5 of the flat portion of the joining member 30 disposed between the rear end face 10R of the semiconductor laser element 10 and the outer edge of the base 40, and the thickness t6 of the joining member 30 located at a position from the rear end face 10R toward the inner side of the semiconductor laser element 10 and at a distance from the rear end face 10R equal to the width A of the semiconductor laser element 10, satisfy the relationship t5 ≤ t6. Here, the flat portion refers to the surface of the joining member 30 (in other words, the back side surface of the surface of the joining member 30 opposite to the base 40) that is parallel to the main surface of the base 40. In addition, parallelism not only means that the main surface of the base 40 and the surface of the joining member 30 are completely parallel, but also that they are substantially parallel. For example, parallelism means that the angle formed by the main surface of the base 40 and the surface of the joining member 30 is 2° or less. In addition, the thickness of the flat portion can be defined as the thickness at the midpoint between the position of the rear end face 10R in the second direction D2 and the outer edge of the joining member 30.

[0107] As described above, by satisfying the relationship t5≤t6, it is possible to suppress the attachment of the bonding member 30, which is located on the outside of the rear end face 10R of the semiconductor laser element 10, to the rear end face 10R of the semiconductor laser element 10.

[0108] Furthermore, the distance D in the first direction D1 between the rear end face 10R of the semiconductor laser element 10 and the outer edge of the bonding member 30 disposed between the rear end face 10R and the outer edge of the base 40, and the width A of the semiconductor laser element 10, satisfy the relationship D ≥ A / 4. Therefore, similar to the outer regions 30B and 30C of the bonding member 30 described above, the maximum thickness of the bonding member 30 located on the outer side relative to the rear end face 10R can be reduced. Thus, it is possible to suppress the bonding member 30 located on the outer side relative to the rear end face 10R of the semiconductor laser element 10 from attaching to the rear end face 10R of the semiconductor laser element 10.

[0109] Furthermore, the distance D and the width A of the semiconductor laser element 10 can satisfy the relationship D≥A / 2. This further suppresses the attachment of the bonding member 30, which is located on the outer side relative to the rear end face 10R of the semiconductor laser element 10, to the rear end face 10R of the semiconductor laser element 10.

[0110] Furthermore, the distance D and the width A of the semiconductor laser element 10 can satisfy the relationship D ≤ 2A. This helps to suppress the enlargement of the semiconductor laser device 1. Furthermore, the distance D and the width A of the semiconductor laser element 10 can satisfy the relationship D ≤ A. This further helps to suppress the enlargement of the semiconductor laser device 1.

[0111] In addition, such as Figure 2 As shown in the cross-section perpendicular to the second direction D2, the semiconductor laser element 10 can be joined at an angle relative to the main surface of the base 40. For example, by joining the semiconductor laser element 10 at an angle to the main surface of the base 40, the thickness of the joining member 30 increases as it moves closer to the rear end surface 10R from the front end surface 10F of the semiconductor laser element 10. Even in this case, the various configurations described above can suppress the adhesion of the joining member 30 to the rear end surface 10R of the semiconductor laser element 10.

[0112] [1-3. Manufacturing Method]

[0113] Next, we will discuss the manufacturing method of the semiconductor laser device 1 according to this embodiment. Figures 5-8 Please provide an explanation. Figure 5 This is a flowchart illustrating the manufacturing method of the semiconductor laser device 1 in this embodiment. Figures 6-8 Each of the above shows a schematic cross-sectional view of a step in the manufacturing method of the semiconductor laser device 1 in this embodiment. Figures 6-8 The diagram shows a cross-section of the semiconductor laser element 10, the base 40, and the bonding member 30 perpendicular to the second direction D2.

[0114] First, such as Figure 5As shown, a semiconductor laser element 10 is prepared (S10).

[0115] Next, a base 40 for which the bonding member 30 is stacked on top of the electrode film 43 is prepared (S20). In this embodiment, a bonding member 30 of thickness ts is stacked on the barrier layer 44 of the base 40.

[0116] Next, as follows Figure 6 As shown, a semiconductor laser element 10 is disposed on the bonding component 30. Figure 5 (S30). Here, the semiconductor laser element 10 is disposed on the bonding member 30 with the stacked body SL of the semiconductor laser element 10 facing the bonding member 30. At this time, the front end face 10F of the semiconductor laser element 10 is positioned on the outside relative to the outer edge of the base 40.

[0117] like Figure 5 As shown, after step S30 of configuring the semiconductor laser element 10, the base 40 is heated to a first peak temperature T1 higher than the melting point Tm of the bonding member 30, causing the bonding member 30 to melt (first heating step S40). Specifically, as... Figure 6 As shown, the base 40 is positioned on the heater 990, and the base 40 is heated by raising the temperature of the heater 990. In this first heating step S40, before the temperature of the base 40 reaches the melting point Tm of the joining member 30, as... Figure 7 As shown, a load is applied to the semiconductor laser element 10, thereby pressing the semiconductor laser element 10 against the base 40. As a result, after the bonding member 30 melts, the surface of the semiconductor laser element 10 opposite to the bonding member 30 and the contact area with the bonding member 30 can be increased. In other words, the formation of voids between the semiconductor laser element 10 and the bonding member 30 can be suppressed. Furthermore, by applying a load to the semiconductor laser element 10, the bonding member 30 is compressed from the inner region 30M located between the semiconductor laser element 10 and the base 40 to the outer regions 30B and 30C, and to the region outside the rear end face 10R of the semiconductor laser element 10. Therefore, the maximum thickness of the bonding member 30 in the outer regions 30B and 30C, etc., is increased.

[0118] like Figure 5 As shown, after the first heating step S40, the temperature of the base 40 is reduced to a temperature lower than the melting point Tm of the bonding member 30, i.e., the switching temperature Tv (first cooling step S50). In this first cooling step S50, the application of load to the semiconductor laser element 10 is stopped before the temperature of the base 40 reaches the melting point Tm of the bonding member 30. The temperature at which the application of load is stopped is not necessarily a temperature higher than the melting point Tm, but can also be a temperature lower than the melting point Tm.

[0119] After the first temperature reduction step S50, the base 40 is heated to a second peak temperature T2 higher than the melting point Tm of the bonding member 30, and the bonding member 30 is melted again (second heating step S60). Here, the first peak temperature T1, the second peak temperature T2, and the melting point Tm of the bonding member 30 satisfy the relationship Tm < T1 < T2.

[0120] After the second heating step S60, the temperature of the base 40 is lowered to a temperature lower than the melting point Tm of the bonding member 30 (second temperature reduction step S70). Here, the temperature of the base 40 is lowered to the temperature before the first heating step S40 is performed (in other words, the preparation stage temperature).

[0121] In the second heating step S60 and the second temperature reduction step S70, a load may or may not be applied to the semiconductor laser element 10. Further, by not applying a load to the semiconductor laser element 10, the bonding member 30 extruded from the internal region 30M located between the semiconductor laser element 10 and the base 40 to the external regions 30B and 30C and the like can be moved to the internal region 30M by surface tension. Thereby, the maximum thickness of the bonding member 30 in the external regions 30B and 30C can be reduced.

[0122] Through the above steps, it is possible to manufacture Figure 8 the semiconductor laser device 1 shown.

[0123] (Embodiment 2)

[0124] Next, the semiconductor laser device according to Embodiment 2 will be described. The semiconductor laser device according to this embodiment is mainly different from the semiconductor laser device 1 according to Embodiment 1 in the shape of the bonding member. Next, the semiconductor laser device of this embodiment will be described centering on the differences from the semiconductor laser device 1 of Embodiment 1.

[0125] [2-1. Overall Structure]

[0126] First, regarding the overall structure of the semiconductor laser device according to this embodiment, use Figure 9 and Figure 10 to explain. Figure 9 and Figure 10 each show schematic cross-sectional views of the semiconductor laser device of this embodiment perpendicular to the first direction D1 and the second direction D2. In Figure 10 a cross-section along the X-X line of Figure 9 is shown.

[0127] As Figure 9 and Figure 10As shown, the semiconductor laser device 101 includes a base 40, a semiconductor laser element 10, and a bonding member 130, which bonds the base 40 to the semiconductor laser element 10. The semiconductor laser element 10 and the base 40 in this embodiment have the same structure as those in Embodiment 1.

[0128] The bonding component 130 involved in this embodiment is a component that bonds the base 40 to the semiconductor laser element 10. For example... Figure 9 As shown, the bonding member 130, in a cross-section perpendicular to the first direction D1, has an inner region 130M that bonds to the semiconductor laser element 10, an outer region 130B disposed outside the inner region 130M, and another outer region 130C. The outer region 130B is disposed relative to the inner region 130M on one side 10B of the semiconductor laser element 10, and the other outer region 130C is disposed relative to the inner region 130M on the other side 10C of the semiconductor laser element 10. In other words, the outer region 130B is the region disposed outside the inner region 130M that is closer to the side 10B of the semiconductor laser element 10, and the outer region 130C is the region disposed outside the inner region 130M that is closer to the side 10C of the semiconductor laser element 10.

[0129] In this embodiment, the surfaces of each external region are convex. The joining member 130 having such a shape can be achieved, for example, by reducing the width of each external region or changing a portion of the manufacturing method in the semiconductor laser device 1 according to Embodiment 1. For example, in the case of Embodiment 1, shortening the time of the second heating step or increasing the load applied to the semiconductor laser element 10 can achieve the joining member 130 according to this embodiment. The detailed configuration of the joining member 130 will be described later.

[0130] [2-2. Functions and Effects]

[0131] Next, regarding the function and effect of the semiconductor laser device 101 involved in this embodiment, we will utilize... Figure 9 as well as Figure 10 Please provide an explanation.

[0132] exist Figure 9In the semiconductor laser device 101 shown, similar to the semiconductor laser device 1 according to Embodiment 1, in the second direction D2, the width A of the semiconductor laser element 10, the width B of one outer region 130B of the bonding member 130, and the width C of the other outer region 130C satisfy the relationships B≥A / 4 and C≥A / 4. Therefore, similar to the semiconductor laser device 1 according to Embodiment 1, it is possible to suppress the bonding member 130 from attaching to the sides 10B and 10C of the semiconductor laser element 10, thus suppressing short circuits between the p-type semiconductor layer 14 and the n-type semiconductor layer 12 caused by the bonding member 130.

[0133] Furthermore, the width A of the semiconductor laser element 10, the width B of one external region 130B, and the width C of the other external region 130C can satisfy at least one of the following relationships: B≥A / 2 and C≥A / 2.

[0134] Furthermore, the width A of the semiconductor laser element 10, the width B of one external region 130B, and the width C of the other external region 130C can satisfy the relationships B≤2A and C≤2A. Furthermore, the width A of the semiconductor laser element 10, the width B of one external region 130B, and the width C of the other external region 130C can satisfy the relationships B≤A and C≤A.

[0135] As described in Embodiment 1, the semiconductor laser element 10 has a stepped portion 11b and a stepped portion 11c. The stepped portion 11b is formed at one end of one side 10B of the semiconductor laser element 10, near the base 40. The stepped portion 11c is formed at one end of the other side 10C of the semiconductor laser element 10, near the base 40. Figure 9 As shown, in the stepped portions 11b and 11c, the semiconductor laser element 10 and the bonding member 130 are separated. In other words, a gap gB is formed between one side 10B and one outer region 130B of the bonding member 130, and a gap gC is formed between the other side 10C and the other outer region 130C of the bonding member 130. This prevents the bonding member 130 from adhering to the sides 10B and 10C of the semiconductor laser element 10.

[0136] Furthermore, the maximum thickness t13 of the bonding member 130 in one outer region 130B, and the distance t12 between the stepped portion 11b and the surface of the bonding member 130 on the base 40 side (i.e., the distance between the side surface 10B and the base 40), satisfy the relationship t13≤t12. Furthermore, the maximum thickness t17 of the bonding member 130 in the other outer region 130C, and the distance t16 between the stepped portion 11c and the surface of the bonding member 130 on the base 40 side (i.e., the distance between the side surface 10C and the base 40), satisfy the relationship t17≤t16. Thus, it is possible to suppress the bonding member 130 from adhering to the sides 10B and 10C of the semiconductor laser element 10.

[0137] Furthermore, the maximum thickness t15 of the bonding member 130 in the inner region 130M, the minimum thickness t11 of the bonding member 130 in the inner region 130M, the maximum thickness t13 of the bonding member 130 in one outer region 130B, and the maximum thickness t17 of the bonding member 130 in the other outer region 130C, must at least satisfy one of the relationships t13 ≤ t11 × 4 and t17 ≤ t15 × 4. Therefore, since the thickness of the bonding member 130 in each outer region can be reduced, it is possible to suppress the bonding member 130 from attaching to the sides 10B and 10C of the semiconductor laser element 10.

[0138] Furthermore, the aforementioned maximum thickness t15, minimum thickness t11, maximum thickness t13, and maximum thickness t17 can satisfy at least one of the relationships t13 ≤ t11 × 2 and t17 ≤ t15 × 2. Therefore, since the thickness of the bonding member 130 in each external region can be reduced, adhesion of the bonding member 130 to the sides 10B and 10C of the semiconductor laser element 10 can be suppressed.

[0139] Furthermore, the semiconductor laser element 10 can be configured at an angle relative to the main surface of the base 40. For example, regarding the position where the thickness of the bonding member 130 in the inner region 130M is the greatest, the distance from the position of the greatest thickness to the other side 10C is smaller than the distance to the other side 10B, and regarding the position where the thickness of the bonding member 130 is the least, the distance from the position of the least thickness to the other side 10B is smaller than the distance to the other side 10C. In this case, the maximum thickness t15 of the bonding member 130 in the inner region 130M, the minimum thickness t11 of the bonding member 130 in the inner region 130M, the thickness t14 of the bonding member 130 at the outer edge in one outer region 130B, and the thickness t18 of the bonding member 130 at the outer edge in the other outer region 130C, can at least satisfy one of the relationships t11≥t14 / 1.5 and t15≥t18 / 1.5. Therefore, the thickness of the bonding member 130 in the internal region 130M can be sufficiently ensured, while the thickness of the bonding member 130 in each external region can be reduced. Thus, the bonding area between the semiconductor laser element 10 and the bonding member 130 can be ensured, while the adhesion of the bonding member 130 to each side of the semiconductor laser element 10 can be suppressed.

[0140] In addition, such as Figure 10 As shown, the distance t22 between the rear end face 10R of the semiconductor laser element 10 and the surface of the bonding member 130 on the base 40 side (i.e., the distance between the rear end face 10R and the base 40), and the maximum thickness t23 of the bonding member 130 disposed between the rear end face 10R and the outer edge of the base 40, satisfy the relationship t23≤t22. Therefore, it is possible to suppress the bonding member 130 from adhering to the rear end face 10R of the semiconductor laser element 10.

[0141] Furthermore, in the first direction D1, the maximum thickness t21 of the bonding member 130 located at a position from the rear end face 10R toward the inward side and at a distance from the rear end face 10R equal to the width A of the semiconductor laser element 10, and the maximum thickness t23 of the bonding member 130 disposed between the rear end face 10R and the outer edge of the base 40, satisfy the relationship t23 ≤ t21 × 4. Thus, the thickness of the bonding member 130 between the semiconductor laser element 10 and the base 40 is sufficiently ensured, while the thickness of the bonding member 130 on the outer side of the rear end face 10R of the semiconductor laser element 10 is reduced. Therefore, the bonding area between the semiconductor laser element 10 and the bonding member 130 is ensured, while adhesion of the bonding member 130 to the rear end face 10R of the semiconductor laser element 10 is suppressed.

[0142] Furthermore, the maximum thicknesses t21 and t23 can satisfy the relationship t23 ≤ t21 × 2. This further suppresses the adhesion of the bonding member 130 to the rear end face 10R of the semiconductor laser element 10.

[0143] Furthermore, in the first direction D1, the maximum thickness t21 of the bonding member 130 located at a position extending inward from the rear end face 10R and at a distance from the rear end face 10R equal to the width A of the semiconductor laser element 10, and the thickness t24 of the outer edge of the bonding member 130 disposed between the rear end face 10R and the outer edge of the base 40, satisfy the relationship t21 ≥ t24 / 1.5. Therefore, it is possible to suppress the bonding member 130 from adhering to the rear end face 10R of the semiconductor laser element 10.

[0144] (Implementation Method 3)

[0145] Next, the semiconductor laser device according to Embodiment 3 will be described. The main difference between the semiconductor laser device according to this embodiment and the semiconductor laser device 1 according to Embodiment 1 is that the semiconductor laser element does not have a stepped portion formed. The semiconductor laser device of this embodiment will be described in detail below, focusing on the differences between it and the semiconductor laser device 1 of Embodiment 1.

[0146] Figure 11 This is a schematic cross-sectional view showing a section perpendicular to the first direction of the semiconductor laser device 201 in this embodiment. (As shown...) Figure 11 As shown, the semiconductor laser device 201 includes a base 40, a semiconductor laser element 210, and a bonding member 30 for bonding the base 40 and the semiconductor laser element 210. The base 40 and bonding member 30 of this embodiment have the same structure as the base 40 and bonding member 30 of Embodiment 1.

[0147] Regarding the semiconductor laser element 210 involved in this embodiment, using Figure 12 Please provide an explanation. Figure 12 This is a schematic cross-sectional view showing the overall structure of the semiconductor laser element 210 in this embodiment. (As shown...) Figure 12 As shown, the semiconductor laser element 210 includes a substrate 211, a laminate SL, an insulating layer 15, a p-side contact electrode 16, a p-side electrode 17, and an n-side electrode 19. In the semiconductor laser element 210 of this embodiment, the stepped portions 11b and 11c are not formed. Therefore, the shape of the substrate 211, etc., differs from the shape of the substrate 11, etc., in Embodiment 1.

[0148] In the semiconductor laser device 201 using a semiconductor laser element 210 with such a structure, similar to the semiconductor laser device 1 of Embodiment 1, it is possible to suppress the adhesion of the bonding member 30 to one side 210B and the other side 210C of the semiconductor laser element 210, and to suppress the adhesion of the bonding member 30 to the rear end face (in Figure 11 as well as Figure 12 (Not shown in the figure). Specifically, the p-side electrode 17 of the semiconductor laser element 210, as shown in the figure. Figure 11 as well as Figure 12 As shown, it is not formed on each side. Such a p-side electrode 17 is bonded to the bonding member 30. Furthermore, in this embodiment, the insulating layer 15 of the semiconductor laser element 10 is not bonded to the bonding member 30. Thus, as... Figure 11 As shown, the bonding member 30 has an inner region 30M that is bonded to the p-side electrode 17 of the semiconductor laser element 210, and an outer region 30B and an outer region 30C disposed outside the inner region 30M. The outer region 30B is disposed on one side 210B of the semiconductor laser element 210 relative to the inner region 30M, and the outer region 30C is disposed on the other side 210C of the semiconductor laser element 210 relative to the inner region 30M.

[0149] Therefore, as Figure 11 As shown, the outer region 30B of the bonding member 30 can be separated from one side 210B of the semiconductor laser element 210. In other words, a gap gB is formed between one side 210B and the outer region 30B of the bonding member 30. Furthermore, the outer region 30C of the bonding member 30 can be separated from the other side 210C of the semiconductor laser element 210. In other words, a gap gC is formed between the other side 210C and the outer region 30C of the bonding member 30.

[0150] In this way, even when using a semiconductor laser element 210 without a stepped portion, it is possible to realize a semiconductor laser device 201 that can suppress the attachment of the bonding member 30 to each side and rear end of the semiconductor laser element 210.

[0151] (variant examples, etc.)

[0152] The semiconductor laser device involved in this disclosure has been described above based on various embodiments; however, this disclosure is not limited to the above embodiments.

[0153] For example, in the various embodiments described above, the semiconductor laser element is a component using a nitride semiconductor material, but the semiconductor laser element is not limited to this. For example, the semiconductor laser element can be a component using GaAs material. Furthermore, in this case, the resonator length L can be approximately 4 mm, and the width A can be approximately 0.5 mm.

[0154] Furthermore, in the semiconductor laser element 10 according to the above embodiments, the waveguide path is formed by the ridge portion 10s, but the structure of the waveguide path is not limited to this. For example, the waveguide path can be formed using an electrode stripe structure, an embedded structure, etc.

[0155] Furthermore, any forms obtained by implementing the above embodiments through various modifications conceived by those skilled in the art, as well as forms achieved by arbitrarily combining the constituent elements and functions of the above embodiments without departing from the spirit of this disclosure, are all included in this disclosure.

[0156] The semiconductor laser device disclosed herein is suitable, for example, as a high-output and high-efficiency light source, for laser beam processing machines, projectors, automotive headlights, etc.

[0157] Symbol Explanation

[0158] 1, 101, 201 Semiconductor laser device; 10, 210 Semiconductor laser element; 10B, 10C, 210B, 210C side surface; 10F front end surface; 10R rear end surface; 10s ridge portion; 10t trench portion; 11, 211 substrate; 11b, 11c stepped portion; 11s main surface; 12n-type semiconductor layer; 13 active layer; 14p-type semiconductor layer; 15 insulating layer; 16p-side contact electrode; 17p-side electrode; 19n-side electrode; 30, 130 bonding component; 30B, 30C, 130B, 130C external region; 30M, 130M internal region; 40 base; 41 first base plate; 42 close bonding layer; 43 electrode film; 44 barrier layer; 990 heater; gB, gC, gR gap; SL laminate.

Claims

1. A semiconductor laser device, The semiconductor laser device comprises: Base; Semiconductor laser components; and The bonding component bonds the base to the semiconductor laser element. The semiconductor laser element has a substrate and a laminate stacked on the main surface of the substrate, and the laminate is configured to face the base. The laminate has a first conductivity semiconductor layer, an active layer, and a second conductivity semiconductor layer sequentially stacked on the substrate. A waveguide path extending in a first direction is formed in the laminate, the first direction being parallel to the main surface of the substrate. In a cross-section perpendicular to the first direction, the bonding member has an internal region that bonds to the semiconductor laser element, and one external region and the other external region disposed outside the internal region. One external region is disposed on one side of the semiconductor laser element relative to the internal region, and the other external region is disposed on the other side of the semiconductor laser element relative to the internal region. The outer region of one side includes the region disposed on the outer side of the one side. The other external region includes the region disposed on the outer side of the other side. The outer region of the semiconductor laser element is separated from the side of the semiconductor laser element. The semiconductor laser element has a first step portion and a second step portion, the first step portion being formed at one end of one side near the base, and the second step portion being formed at one end of the other side near the base. In the first and second step portions, the semiconductor laser element is separate from the bonding component. The maximum thickness t13 of the joining member in the outer region of one party, and the distance t12 between the first step portion and the base side surface of the joining member, satisfy the relationship t13 ≤ t12. The maximum thickness t17 of the joining member in the other outer region and the distance t16 between the second step and the base side surface of the joining member satisfy the relationship t17 ≤ t16. The width A of the semiconductor laser element, the width B of one external region, and the width C of the other external region in the second direction, which is perpendicular to the first direction and parallel to the main surface of the substrate, satisfy the relationships B≥A / 4 and C≥A / 4.

2. The semiconductor laser device as described in claim 1, The maximum thickness t15 of the joining component in the inner region, the minimum thickness t11 of the joining component in the inner region, the maximum thickness t13 of the joining component in one of the outer regions, and the maximum thickness t17 of the joining component in the other outer region shall at least satisfy one of the following relationships: t13 ≤ t11 × 4 and t17 ≤ t15 × 4.

3. The semiconductor laser device as described in claim 2, The maximum thickness t15 of the joining component in the inner region, the minimum thickness t11 of the joining component in the inner region, the maximum thickness t13 of the joining component in one of the outer regions, and the maximum thickness t17 of the joining component in the other outer region shall at least satisfy one of the following relationships: t13 ≤ t11 × 2 and t17 ≤ t15 × 2.

4. A semiconductor laser device, The semiconductor laser device comprises: Base; Semiconductor laser components; and The bonding component bonds the base to the semiconductor laser element. The semiconductor laser element has a substrate and a laminate stacked on the main surface of the substrate, and the laminate is configured to face the base. The laminate has a first conductivity semiconductor layer, an active layer, and a second conductivity semiconductor layer sequentially stacked on the substrate. A waveguide path extending in a first direction is formed in the laminate, the first direction being parallel to the main surface of the substrate. In a cross-section perpendicular to the first direction, the bonding member has an internal region that bonds to the semiconductor laser element, and one external region and the other external region disposed outside the internal region. One external region is disposed on one side of the semiconductor laser element relative to the internal region, and the other external region is disposed on the other side of the semiconductor laser element relative to the internal region. The outer region of one side includes the region disposed on the outer side of the one side. The other external region includes the region disposed on the outer side of the other side. The outer region of the semiconductor laser element is separated from the side of the semiconductor laser element. The semiconductor laser element has a first stepped portion and a second stepped portion. The first stepped portion is formed at one end of one side near the base, and the second stepped portion is formed at one end of the other side near the base. In both the first and second stepped portions, the semiconductor laser element is separate from the bonding member. Regarding the location where the thickness of the joining member in the inner region is at its maximum, the distance from the location of maximum thickness to the other side is smaller than the distance to the other side; and regarding the location where the thickness of the joining member in the inner region is at its minimum, the distance from the location of minimum thickness to the other side is smaller than the distance to the other side. The maximum thickness t15 of the joining member in the inner region, the minimum thickness t11 of the joining member in the inner region, the thickness t14 of the joining member at the outer edge of one of the outer regions, and the thickness t18 of the joining member at the outer edge of the other outer region shall at least satisfy one of the following relationships: t11 ≥ t14 / 1.5 and t15 ≥ t18 / 1.

5. The width A of the semiconductor laser element, the width B of one external region, and the width C of the other external region in the second direction, which is perpendicular to the first direction and parallel to the main surface of the substrate, satisfy the relationships B≥A / 4 and C≥A / 4.

5. A semiconductor laser device, The semiconductor laser device comprises: Base; Semiconductor laser components; and The bonding component bonds the base to the semiconductor laser element. The semiconductor laser element has a substrate and a laminate stacked on the main surface of the substrate, and the laminate is configured to face the base. The laminate has a first conductivity semiconductor layer, an active layer, and a second conductivity semiconductor layer sequentially stacked on the substrate. A waveguide path extending in a first direction is formed in the laminate, the first direction being parallel to the main surface of the substrate. In a cross-section perpendicular to the first direction, the bonding member has an internal region that bonds to the semiconductor laser element, and one external region and the other external region disposed outside the internal region. One external region is disposed on one side of the semiconductor laser element relative to the internal region, and the other external region is disposed on the other side of the semiconductor laser element relative to the internal region. The outer region of one side includes the region disposed on the outer side of the one side. The other external region includes the region disposed on the outer side of the other side. The outer region of the semiconductor laser element is separated from the side of the semiconductor laser element. The semiconductor laser element has a front end face that emits laser light in the first direction and a rear end face opposite to the front end face. The front end face is positioned such that it is located outside the base relative to the outer edge of the base in the first direction. The rear end face is positioned such that it is located inside the base relative to the outer edge of the base in the first direction. The joining component is disposed between the rear end face and the outer edge of the base. The joining component is separate from the rear end face. The width A of the semiconductor laser element, the width B of one outer region, and the width C of the other outer region in the second direction, which is perpendicular to the first direction and parallel to the main surface of the substrate, satisfy the relationships B ≥ A / 4 and C ≥ A / 4. The thickness t5 in the flat portion of the joining member disposed between the rear end face and the outer edge of the base, and the thickness t6 of the joining member at a position from the rear end face toward the inward side and at a distance from the rear end face equal to the width A of the semiconductor laser element, satisfy the relationship t5≤t6.

6. A semiconductor laser device, The semiconductor laser device comprises: Base; Semiconductor laser components; and The bonding component bonds the base to the semiconductor laser element. The semiconductor laser element has a substrate and a laminate stacked on the main surface of the substrate, and the laminate is configured to face the base. The laminate has a first conductivity semiconductor layer, an active layer, and a second conductivity semiconductor layer sequentially stacked on the substrate. A waveguide path extending in a first direction is formed in the laminate, the first direction being parallel to the main surface of the substrate. In a cross-section perpendicular to the first direction, the bonding member has an internal region that bonds to the semiconductor laser element, and one external region and the other external region disposed outside the internal region. One external region is disposed on one side of the semiconductor laser element relative to the internal region, and the other external region is disposed on the other side of the semiconductor laser element relative to the internal region. The outer region of one side includes the region disposed on the outer side of the one side. The other external region includes the region disposed on the outer side of the other side. The outer region of the semiconductor laser element is separated from the side of the semiconductor laser element. The semiconductor laser element has a front end face that emits laser light in the first direction and a rear end face opposite to the front end face. The front end face is positioned such that it is located outside the base relative to the outer edge of the base in the first direction. The rear end face is positioned such that it is located inside the base relative to the outer edge of the base in the first direction. The joining component is disposed between the rear end face and the outer edge of the base. The joining component is separate from the rear end face. The width A of the semiconductor laser element, the width B of one outer region, and the width C of the other outer region in the second direction, which is perpendicular to the first direction and parallel to the main surface of the substrate, satisfy the relationships B ≥ A / 4 and C ≥ A / 4. The distance t22 between the rear end face and the base side surface of the joining member, and the maximum thickness t23 of the joining member disposed between the rear end face and the outer edge of the base, satisfy the relationship t23≤t22.

7. The semiconductor laser device as described in claim 6, In the first direction, the maximum thickness t21 of the bonding member located at a position from the rear end face toward the inside and at a distance from the rear end face equal to the width A of the semiconductor laser element, and the maximum thickness t23 of the bonding member disposed between the rear end face and the outer edge of the base, satisfy the relationship t23≤t21×4.

8. The semiconductor laser device as described in claim 7, In the first direction, the maximum thickness t21 of the bonding member located at a position from the rear end face toward the inside and at a distance from the rear end face equal to the width A of the semiconductor laser element, and the maximum thickness t23 of the bonding member disposed between the rear end face and the outer edge of the base, satisfy the relationship t23≤t21×2.

9. The semiconductor laser device according to any one of claims 6 to 8, In the first direction, the maximum thickness t21 of the bonding member located at a position from the rear end face toward the inside and at a distance from the rear end face equal to the width A of the semiconductor laser element, and the thickness t24 of the outer edge of the bonding member disposed between the rear end face and the outer edge of the base, satisfy the relationship t21≥t24 / 1.

5.

10. The semiconductor laser device according to any one of claims 6 to 8, The distance D between the rear end face and the outer edge of the engaging member disposed between the rear end face and the outer edge of the base in the first direction, and the width A of the semiconductor laser element, satisfy the relationship D≥A / 4.

11. The semiconductor laser device as claimed in claim 10, The distance D between the rear end face and the outer edge of the engaging member disposed between the rear end face and the outer edge of the base in the first direction, and the width A of the semiconductor laser element, satisfy the relationship D≥A / 2.

12. The semiconductor laser device according to any one of claims 5 to 8, The semiconductor laser element has an insulating layer disposed between the laminate and the bonding member. The insulating layer is separate from the bonding member at one end of the semiconductor laser element in the first direction, near the rear end face.

13. The semiconductor laser device according to any one of claims 1 to 8, The base has: A metal electrode film is electrically connected to the bonding component; and A barrier layer is disposed between the electrode film and the bonding member.

14. The semiconductor laser device as described in claim 13, The area S1 of the barrier layer and the area S2 of the bonding component in contact with the base satisfy the relationship S1≥S2.

15. The semiconductor laser device as claimed in claim 13, The base has: The first base; and A tight-fitting layer is disposed between the first substrate and the electrode film.

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