A method for manufacturing a resistance wire for an aluminum nitride heating base

Abstract

The present invention discloses a method for making a resistance wire for an aluminum nitride heating base, comprising the following steps: according to the heat dissipation of the base body during use, determining the various parameter values ​​of the molybdenum wire made into the resistance wire, the arrangement mode of the resistance wire, and the spacing between each spiral after being arranged in a spiral shape; winding the resistance wire into a spiral resistance wire that conforms to the arrangement mode of the resistance wire by a winding machine; using a machining center to open a spiral placement groove that is completely consistent with the arrangement mode of the resistance wire on a ceramic block; inserting the spiral resistance wire into the spiral placement groove; placing the ceramic block and the resistance wire inserted therein into an insulation box for insulation treatment; taking out the resistance wire from the ceramic block, and burying it in the aluminum nitride blank that needs to be sintered and sintering it together with the aluminum nitride to form the required aluminum nitride heating base. The present invention can produce resistance wires arranged in partitions to ensure the uniformity of the wafer temperature during the use of the heating base.

Description

Technical Field

[0001] The invention relates to the technical field of resistance wire processing, and in particular to a method for manufacturing a resistance wire used for an aluminum nitride heating base. Background Art

[0002] In the production process of semiconductor chips, a key process is CVD (chemical vapor deposition). In this process, the wafer usually needs to be heated to nearly 500°C to allow the plasma in the CVD equipment chamber to undergo a chemical reaction and deposit the required film on the wafer. Therefore, the CVD equipment usually needs to be equipped with a pedestal with a heating function to place the wafer.

[0003] The structure of this type of base is usually as follows Figure 1 As shown in the figure, the main body includes a disc and a shaft, and its material is usually aluminum nitride. A resistance wire is buried inside the disc, and the resistance wire is usually spiral-shaped and made of molybdenum. There is a metal rod in the middle of the shaft connected to the resistance wire to connect to an external power source. When using a base to heat the wafer, the temperature of the wafer must be kept uniform, so the arrangement of the resistance wire needs to be certain. Generally speaking, the arrangement of the resistance wire is as follows Figure 2 As shown, it can be divided into three areas. The center of the disk is arrangement area a, which requires a higher heating power because the heat dissipation through the axis is faster. The edge of the disk is arrangement area b, which also requires a higher heating power because it is close to the edge of the disk and the heat dissipation to the surrounding environment is also faster. The area between arrangement area a and arrangement area c is arrangement area b. Therefore, the heating resistance wires are usually arranged densely in areas a and c, and loosely in area b.

[0004] However, when using molybdenum as raw material to make resistance wire, due to its high hardness and difficulty in processing, there are great technical difficulties in forming Figure 2 The resistance wire structure shown.

[0005] Therefore, it is necessary to provide a method for manufacturing a resistance wire for an aluminum nitride heating base to solve the above problems. Summary of the invention

[0006] In order to overcome the above-mentioned shortcomings, the purpose of the present invention is to provide a method for manufacturing a resistance wire for an aluminum nitride heating base, to manufacture resistance wires arranged in partitions, and to ensure the uniformity of the wafer temperature during the use of the aluminum nitride heating base.

[0007] In order to achieve the above purpose, the technical solution adopted by the present invention is: a method for manufacturing a resistance wire for an aluminum nitride heating base, comprising the following steps:

[0008] Step 1: Use simulation software to determine the various parameter values ​​of the molybdenum wire used to make the resistance wire, the arrangement of the resistance wire, and the spacing between each spiral after being arranged in a spiral shape according to the heat dissipation of the base body during use; the simulation software tests the heat dissipation and generates data, which is a prior art, and its specific structure and principle are not elaborated here.

[0009] Step 2: Select a suitable molybdenum wire according to the parameters in step 1, and wind it into a spiral resistance wire that conforms to the resistance wire arrangement method through a winding machine;

[0010] Step 3: Take a ceramic block and use a machining center to open a spiral placement groove on the ceramic block that is exactly the same as the arrangement of the resistance wire;

[0011] Step 4: insert the spiral resistance wire rolled in step 2 into the spiral placement groove opened on the ceramic block in step 3;

[0012] Step 5: Place the ceramic block in step 4 and the resistance wire inserted thereinto into an insulation box for insulation treatment;

[0013] Step 6: Take out the resistance wire from the ceramic block, bury it in the aluminum nitride blank to be sintered, and sinter it together with the aluminum nitride to form the required aluminum nitride heating base.

[0014] Furthermore, the parameters of the resistance wire required in step one are: the diameter d of the molybdenum wire, the total length L, and the outer diameter D and length I of the molybdenum wire after being wound into a spiral.

[0015] Furthermore, the arrangement area of ​​the resistance wire in step one includes arrangement area a, arrangement area b and arrangement area c, with lengths I1, I2 and I3 respectively, and the spacing between adjacent spirals in the area is P1, P2 and P3. After being arranged in a spiral shape, the spacing between each spiral is S.

[0016] Furthermore, the spiral shape formed by winding the molybdenum wire in step 2 is divided into spiral region 1, spiral region 2, spiral region 3, spiral region 4 and spiral region 5 along its length direction, and the spacing between adjacent spirals in spiral region 1 and spiral region 5 is P 1 / 2, the length of the spiral region is I 1 / 2, the spacing between adjacent spirals in spiral region 3 is P 3 / 2, length is I 3 , the spacing between adjacent spirals in other regions is P 2 / 2, length is I 2 / 2. Among them, I 1 ,I 2 and I 3 The sum of the lengths is the length I of the molybdenum wire after being wound into a spiral.

[0017] Furthermore, in step three, in the spiral placement groove, the width and depth of the spiral placement groove are D, the total length is I, and the spacing between each spiral is S.

[0018] Furthermore, in step four, both ends of the resistance wire are inserted into the area on the spiral placement groove corresponding to the arrangement area a, the middle area of ​​the resistance wire is inserted into the area on the spiral placement groove corresponding to the arrangement area c, and the other parts are inserted into the area on the spiral placement groove corresponding to the arrangement area b.

[0019] Furthermore, in step 5, the temperature in the heat preservation box is 600-800°C, and the heat preservation time is 3-5 hours. Due to the high hardness of molybdenum material, when the resistance wire is inserted into the spiral placement groove on the ceramic block, a large stress will be generated. If the arranged resistance wire is directly taken out of the ceramic block at this time, the resistance wire will be deformed, resulting in its shape being inconsistent with the required arrangement of the resistance wire. The above problem can be solved by continuing high temperature.

[0020] Beneficial effects of the present invention:

[0021] After the resistance wire is arranged in zones, it is placed in an insulation box together with the ceramic block for continuous heat preservation, which can ensure that the molybdenum resistance wire will not deform during the sintering process of aluminum nitride. At the same time, the resistance wire arranged in zones can also ensure the uniformity of the wafer temperature during the use of the aluminum nitride heating base. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic diagram of the heating base structure of the present invention;

[0023] Figure 2 It is a schematic diagram of the resistance wire arrangement structure of the present invention;

[0024] Figure 3 It is a schematic diagram of the spiral region structure of the present invention;

[0025] In the figure: 1. resistance wire; 2. base body; 21. disk; 22. shaft; 221. metal rod; 3. arrangement area; 31. arrangement area a; 32. arrangement area b; 33. arrangement area c; 41. spiral area one; 42. spiral area two; 43. spiral area three; 44. spiral area four; 45. spiral area five. DETAILED DESCRIPTION

[0026] The preferred embodiments of the present invention are described in detail below in conjunction with the accompanying drawings so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby making a clearer and more definite definition of the protection scope of the present invention.

[0027] See attached Figures 1 to 3As shown, a method for manufacturing a resistance wire for an aluminum nitride heating base in this embodiment includes the following steps:

[0028] Step 1: Use simulation software to determine the parameter values ​​of the molybdenum wire used to make the resistance wire 1, the arrangement of the resistance wire 1, and the spacing between each spiral after being arranged in a spiral shape according to the heat dissipation of the base body 2 during use; the simulation software tests the heat dissipation and generates data, which is a prior art, and its specific structure and principle are not elaborated here.

[0029] Step 2: Select a suitable molybdenum wire according to the parameters in step 1, and wind it into a spiral resistance wire 1 that conforms to the arrangement of the resistance wire 1 by a winding machine;

[0030] Step 3: Take a ceramic block and use a machining center to open a spiral placement groove on the ceramic block that is completely consistent with the arrangement of the resistance wire 1; so as to arrange the spiral resistance wire 1 into a resistance wire 1 arranged in zones.

[0031] Step 4: insert the spiral resistance wire 1 rolled in step 2 into the spiral placement groove opened on the ceramic block in step 3;

[0032] Step 5: Place the ceramic block in step 4 and the resistance wire 1 inserted thereinto into an insulation box for insulation treatment;

[0033] Step 6: Take out the resistance wire 1 from the ceramic block, bury it in the aluminum nitride blank to be sintered, and sinter it together with the aluminum nitride to form the required aluminum nitride heating base.

[0034] The resistance wire 1 is buried in the aluminum nitride blank in a required arrangement, thereby ensuring the uniformity of the wafer temperature during the use of the aluminum nitride base.

[0035] The parameters of the resistance wire 1 required in step 1 are: the diameter d of the molybdenum wire, the total length L, and the outer diameter D and length I of the molybdenum wire after being wound into a spiral.

[0036] In step one, the arrangement area of ​​the resistance wire 1 includes arrangement area a31, arrangement area b32 and arrangement area c33, with lengths I1, I2 and I3 respectively, and the spacing between adjacent spirals in the area is P1, P2 and P3. After being arranged in a spiral shape, the spacing between each spiral is S.

[0037] The molybdenum wire is wound into a spiral shape in step 2 and is divided into spiral region 1 41, spiral region 2 42, spiral region 3 43, spiral region 4 44 and spiral region 5 45 along its length direction. The spacing between adjacent spirals in spiral region 1 41 and spiral region 5 45 is P1 / 2, and the length of the spiral region is I1 / 2. The spacing between adjacent spirals in spiral region 3 43 is P3 / 2 and the length is I3. The spacing between adjacent spirals in other regions is P2 / 2 and the length is I2 / 2. The sum of the lengths of I1, I2 and I3 is the length I of the molybdenum wire after winding into a spiral shape.

[0038] In step three, in the spiral placement groove, the width and depth of the spiral placement groove are D, the total length is I, and the spacing between each spiral is S.

[0039] In step four, the two ends of the resistance wire 1 are inserted into the area on the spiral placement groove corresponding to the arrangement area a31, the middle area of ​​the resistance wire 1 is inserted into the area on the spiral placement groove corresponding to the arrangement area c33, and the other parts are inserted into the area on the spiral placement groove corresponding to the arrangement area b32.

[0040] In step 5, the temperature in the heat preservation box is 600-800°C, and the heat preservation time is 3-5 hours. Due to the high hardness of molybdenum material, when the resistance wire 1 is inserted into the spiral placement groove on the ceramic block, a large stress will be generated. If the arranged resistance wire 1 is directly taken out of the ceramic block at this time, the resistance wire 1 will be deformed, resulting in its shape being inconsistent with the required arrangement of the resistance wire 1. The above problem can be solved by continuing high temperature.

[0041] The above implementation modes are only for illustrating the technical concept and features of the present invention, and their purpose is to enable people familiar with this technology to understand the content of the present invention and implement it, and they cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for manufacturing a resistance wire for an aluminum nitride heating base, characterized in that: The following steps are involved: Step 1: using simulation software to determine the various parameter values ​​of the molybdenum wire used to make the resistance wire (1), the arrangement of the resistance wire (1), and the spacing between each spiral after being arranged in a spiral shape, based on the heat dissipation of the base body (2) during use; Step 2: Select a suitable molybdenum wire according to the parameters in step 1, and use a winding machine to wind it into a spiral resistance wire (1) that conforms to the arrangement of the resistance wire (1); Step 3: Take a ceramic block and use a machining center to open a spiral placement groove on the ceramic block that is completely consistent with the arrangement of the resistance wire (1); Step 4: insert the spiral resistance wire (1) rolled in step 2 into the spiral placement groove opened on the ceramic block in step 3; Step 5: Place the ceramic block prepared in step 4 and the resistance wire (1) inserted thereinto into an insulation box for insulation treatment; Step 6: Take out the resistance wire (1) from the ceramic block, and bury it in the aluminum nitride blank to be sintered together with the aluminum nitride to form the required aluminum nitride heating base; The parameters of the resistance wire (1) required in step 1 are: the diameter d, the total length L of the molybdenum wire, and the outer diameter D and length I of the molybdenum wire after being wound into a spiral shape; In step 1, the arrangement area (3) of the resistance wire (1) includes an arrangement area a (31), an arrangement area b (32) and an arrangement area c (33), the lengths of which are respectively I1, I2 and I3, and the spacings between adjacent spirals in the area are P1, P2 and P3, and the spacing between each spiral after being arranged in a spiral shape is S; The spiral shape formed by winding the molybdenum wire in step 2 is divided into spiral region 1 (41), spiral region 2 (42), spiral region 3 (43), spiral region 4 (44) and spiral region 5 (45) along its length direction. The spacing between adjacent spirals in spiral region 1 (41) and spiral region 5 (45) is P1 / 2, and the length of the spiral region is I1 / 2. The spacing between adjacent spirals in spiral region 3 (43) is P3 / 2, and the length is I3. The spacing between adjacent spirals in other regions is P2 / 2, and the length is I2 / 2.

2. The method for manufacturing a resistance wire for an aluminum nitride heating base according to claim 1, characterized in that: In step three, in the spiral placement groove, the width and depth of the spiral placement groove are D, the total length is I, and the spacing between each spiral is S.

3. The method for manufacturing a resistance wire for an aluminum nitride heating base according to claim 1, characterized in that: In step 4, the two ends of the resistance wire (1) are inserted into the area on the spiral placement groove corresponding to the arrangement area a (31), the middle area of ​​the resistance wire (1) is inserted into the area on the spiral placement groove corresponding to the arrangement area c (33), and the other parts are inserted into the area on the spiral placement groove corresponding to the arrangement area b (32).

4. The method for manufacturing a resistance wire for an aluminum nitride heating base according to claim 1, characterized in that: In step 5, the temperature in the heat preservation box is 600-800°C, and the heat preservation time is 3-5 hours.

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