Microelectronic element and method of making same, electronic device

Abstract

The application provides a microelectronic element and a preparation method thereof and an electronic device, and relates to the technical field of integrated circuits. The microelectronic element comprises a substrate, at least two adjusting members, a support structure and a micro-mirror structure; the at least two adjusting members are arranged along a first direction, the first end of each adjusting member is arranged on the substrate, and the second end of each adjusting member is arranged in an extendable and retractable manner along a second direction; the support structure comprises a support beam, a support column and a rotating beam, the support beam is connected to the second end of the adjusting member, the surface of the support beam away from the substrate is connected to the rotating beam through the support column, and the surface of the rotating beam away from the support beam is connected to the micro-mirror structure. The application can solve the problems that the structure of the microelectronic element is complex and the adjustment process of the deflection angle of the micro-vibration mirror is difficult.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of integrated circuits, in particular to a microelectronic element and a preparation method thereof, and an electronic device. BACKGROUND

[0002] A micro-mirror is a common microelectronic structure, which is widely used in the field of automotive laser radar and the like. With the development of automotive automatic driving technology, microelectronic elements with micro-mirrors are also constantly innovated and improved.

[0003] At present, in the microelectronic element with a micro-mirror, the adjustment process of the deflection angle of the micro-mirror is usually realized by using electromagnetic driving and the like. However, the above-mentioned microelectronic element has a complex structure, and the adjustment process of the deflection angle of the micro-mirror is difficult. SUMMARY

[0004] The present application provides a microelectronic element and a preparation method thereof, and an electronic device, to solve the problems of complex structure of the microelectronic element and difficult adjustment process of the deflection angle of the micro-mirror.

[0005] The microelectronic element provided by the present application comprises a substrate, at least two adjusting members, a support structure and a micro-mirror structure.

[0006] The at least two adjusting members are arranged along a first direction, and each adjusting member is arranged to be stretchable or contractible along a second direction, and a first end of the adjusting member is arranged on the substrate.

[0007] The support structure comprises a support beam, a support column and a rotating beam, the support beam is connected to a second end of the adjusting member, the surface of the support beam away from the substrate is connected to the rotating beam through the support column, and the surface of the rotating beam away from the support beam is connected to the micro-mirror structure.

[0008] By adopting the above technical solution, by arranging at least two adjusting members, a support structure and a micro-mirror structure, and arranging the adjusting members along a first direction, when the adjustment process of the deflection angle of the micro-mirror structure is needed, each adjusting member is elongated or shortened along a second direction, thereby driving the support beam to rotate around a rotating shaft perpendicular to the first direction, so that the support beam can in turn drive the support column and the rotating beam to rotate, and then the rotating beam can drive the micro-mirror structure to rotate around the rotating shaft perpendicular to the first direction, so as to make the micro-mirror structure inclined, realize the adjustment process of the deflection angle of the micro-mirror structure, simplify the structure of the microelectronic element with the micro-mirror, and make the adjustment process of the deflection angle of the micro-mirror more convenient.

[0009] In some possible implementation manners, the support beam and the rotating beam extend along the first direction, and the support beam is arranged opposite to the rotating beam.

[0010] The number of the support columns is two, the first end of the support column is connected with the support beam, and the second end of the support column is connected with the rotating beam.

[0011] In some possible embodiments, the micro-mirror structure comprises two micro-mirror units and a connecting part, the two micro-mirror units are arranged along a third direction, the third direction is perpendicular to the first direction, and the rotating beam is arranged between the two micro-mirror units.

[0012] The connecting part is connected with the surface of the rotating beam away from the support beam, the first end of the connecting part is connected with one of the micro-mirror units, and the second end of the connecting part is connected with the other micro-mirror unit.

[0013] In some possible embodiments, the substrate is provided with an electrostatic attraction layer to make the micro-mirror unit close to or away from the substrate.

[0014] In some possible embodiments, the electrostatic attraction layer comprises a plurality of electrostatic attraction parts, and the plurality of electrostatic attraction parts are arranged in multiple rows and multiple columns.

[0015] In some possible embodiments, the second direction is perpendicular to the first direction.

[0016] The number of the adjusting members is three, two of the adjusting members are respectively arranged at the ends of the support beam along the first direction, and the other adjusting member is arranged at the middle of the support beam along the first direction.

[0017] In some possible embodiments, a plurality of micro-mirror structures are arranged, and the plurality of micro-mirror structures are arranged in multiple rows and multiple columns; each micro-mirror structure is connected with at least two adjusting members through one support structure.

[0018] In some possible embodiments, the adjusting member comprises a first electrode plate and a second electrode plate capable of storing electric charges, and an elastic connecting member;

[0019] The first electrode plate and the second electrode plate are arranged apart along the second direction, one of the first electrode plate and the second electrode plate is connected with the substrate, and the other is connected with the support beam.

[0020] One end of the elastic connecting member is connected with the first electrode plate, and the other end of the elastic connecting member is connected with the second electrode plate.

[0021] In some possible embodiments, the first electrode plate is provided with an insulating layer, and the insulating layer is connected with one end of the elastic connecting member away from the second electrode plate.

[0022] In addition, the second electrode plate is provided with an insulating layer, and the insulating layer is connected with one end of the elastic connecting member away from the first electrode plate.

[0023] In some possible implementation manners, the adjusting member comprises an electrically resistive heat conducting layer, an expansion layer and a fixing layer.

[0024] The first surface of the expansion layer is connected to the electrically resistive heat conducting layer, and the second surface of the expansion layer is connected to the fixing layer.

[0025] In some possible implementation manners, the expansion layer is arranged in a ring shape, and the inner side of the expansion layer accommodates the fixing layer.

[0026] The electrically resistive heat conducting layer is arranged on the outer side of the expansion layer, and the end of the electrically resistive heat conducting layer is close to the substrate.

[0027] The embodiment of the present application further provides an electronic device comprising the microelectronic element.

[0028] By adopting the above technical solution, at least two adjusting members, a support structure and a micro-mirror structure are arranged, and the adjusting members are arranged along a first direction. When the adjustment process of the deflection angle of the micro-mirror structure needs to be implemented, each adjusting member is elongated or shortened along a second direction, thereby driving the support beam to rotate around a rotation axis perpendicular to the first direction, so that the support beam can drive the support column and the rotating beam to rotate in turn, and then the rotating beam can drive the micro-mirror structure to rotate around the rotation axis perpendicular to the first direction, so as to make the micro-mirror structure tilt, and the adjustment process of the deflection angle of the micro-mirror structure is implemented, which simplifies the structure of the microelectronic element with the micro-vibration mirror, and makes the adjustment process of the deflection angle of the micro-vibration mirror more convenient.

[0029] The embodiment of the present application further provides a preparation method of a microelectronic element, comprising:

[0030] forming a first sacrificial layer on the surface of the substrate;

[0031] forming an adjusting member and a support beam on the first sacrificial layer, wherein the support beam is formed on the surface of the first sacrificial layer away from the substrate; the first end of the adjusting member is connected to the substrate, and the second end of the adjusting member is connected to the support beam;

[0032] forming a second sacrificial layer on the surface of the support beam away from the first sacrificial layer;

[0033] forming a support column and a rotating beam on the second sacrificial layer, wherein the rotating beam is formed on the surface of the second sacrificial layer away from the support beam; the support column is connected to the support beam and the rotating beam;

[0034] forming a micro-mirror structure on the surface of the rotating beam away from the second sacrificial layer;

[0035] removing the first sacrificial layer and the second sacrificial layer.

[0036] By adopting the technical scheme, when the microelectronic element is prepared, the first sacrificial layer is formed on the substrate, and the adjusting member and the support beam are formed by using the first sacrificial layer; then the second sacrificial layer is formed on the surface of the support beam, and the support column and the rotating beam for connecting the micro-mirror structure are formed by using the second sacrificial layer; when the adjusting process of the deflection angle of the micro-mirror structure is needed to be realized, each adjusting member is elongated or shortened along the second direction, so as to drive the support beam to rotate around the rotating shaft perpendicular to the first direction, so that the support beam can drive the support column and the rotating beam to rotate in turn, and then the rotating beam can drive the micro-mirror structure to rotate around the rotating shaft perpendicular to the first direction, so as to make the micro-mirror structure tilt, and realize the adjusting process of the deflection angle of the micro-mirror structure, which simplifies the structure of the microelectronic element with the micro-mirror, and makes the adjusting process of the deflection angle of the micro-mirror more convenient.

[0037] In some possible implementation manners, the micro-mirror structure comprises two micro-mirror units, and the preparation method further comprises:

[0038] forming an electrostatic attraction layer on the substrate, so as to drive the micro-mirror units to approach or move away from the substrate through the electrostatic attraction layer.

[0039] In some possible implementation manners, in the step of forming the adjusting member in the first sacrificial layer, the following steps are included:

[0040] forming a transition hole in the first sacrificial layer, a length of the transition hole along the second direction is equal to a thickness of the first sacrificial layer;

[0041] forming a first electrode plate at one end of the transition hole close to the substrate;

[0042] forming an elastic connecting member on the surface of the first electrode plate away from the substrate;

[0043] forming a second electrode plate at one end of the elastic connecting member away from the first electrode plate.

[0044] In some possible implementation manners, in the step of forming the elastic connecting member on the surface of the first electrode plate away from the substrate, the following steps are included:

[0045] forming an insulating layer on the surface of the first electrode plate away from the substrate;

[0046] forming a plurality of third sacrificial layers and a plurality of conductive layers on the surface of the insulating layer away from the first electrode plate, and the plurality of third sacrificial layers and the plurality of conductive layers are arranged alternately in the direction away from the substrate;

[0047] The third sacrificial layer is removed to form a plurality of connecting parts.

[0048] The third sacrificial layer is removed to form a plurality of connecting parts. BRIEF DESCRIPTION OF DRAWINGS

[0049] The accompanying drawings, which are incorporated herein and form part of the specification, illustrate embodiments consistent with the present application and, together with the description, further serve to explain the principles of the application.

[0050] Figure 1 A structural schematic diagram of a microelectronic element provided by an embodiment of the present application;

[0051] Figure 2 A structural schematic diagram of a supporting structure provided by an embodiment of the present application;

[0052] Figure 3 A structural schematic diagram of an adjusting member provided by an embodiment of the present application;

[0053] Figure 4 A structural schematic diagram of an adjusting member provided by another embodiment of the present application;

[0054] Figure 5 A structural schematic diagram of a microelectronic element provided by an embodiment of the present application;

[0055] Figure 6 A structural schematic diagram of a microelectronic element provided by an embodiment of the present application;

[0056] Figure 7 A structural schematic diagram of a microelectronic element provided by an embodiment of the present application;

[0057] Figure 8 A structural schematic diagram of a microelectronic element provided by an embodiment of the present application;

[0058] Figure 9 A structural schematic diagram of an adjusting member provided by an embodiment of the present application;

[0059] Figure 10 A structural schematic diagram of an adjusting member provided by an embodiment of the present application;

[0060] BRIEF DESCRIPTION OF DRAWINGS

[0061] 100, base; 110, electrostatic attraction layer; 111, electrostatic attraction part; 200, adjusting piece; 210, first electrode plate; 211, insulating layer; 220, elastic connecting piece; 221, extension part; 222, conductive layer; 230, second electrode plate; 240, resistance heat conduction layer; 250, expansion layer; 260, fixing layer; 300, support structure; 310, support beam; 320, support column; 330, rotating beam; 400, micro-mirror structure; 410, micro-mirror unit; 420, connecting part; 500, first sacrificial layer; 510, transition hole; 600, second sacrificial layer; 610, accommodating hole; 700, third sacrificial layer; 710, through hole.

[0062] The specific embodiments of the present application have been shown by the above drawings, and will be described in more detail hereinafter. These drawings and the written description are not intended to restrict the scope of the present application concept in any way, but to illustrate the present application concept to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0063] As described in the background, the Micro-Electro-Mechanica System (MEMS) technology is an advanced manufacturing technology, which has many advantages such as miniaturization, executability, integrability and good process compatibility, and is widely used in many high-tech industries. In the microelectronic element with a micro-mirror, the adjustment process of the deflection angle of the micro-mirror is usually realized by electromagnetic driving and the like, that is, a magnetic material is arranged on the micro-mirror, and an electric current is applied on the base, so that the electromagnetic force is generated between the base and the magnetic material through the interaction between the electric current and the magnetic field formed by the magnetic material, so that the micro-mirror with the magnetic material is deflected by the electromagnetic force, and the adjustment process of the deflection angle of the micro-mirror is realized. However, the structure of the above-mentioned microelectronic element with a micro-mirror is complex, and the adjustment process of the deflection angle of the micro-mirror is difficult.

[0064] In order to solve the above technical problems, the microelectronic element and the preparation method thereof and the electronic device provided by the embodiments of the present application are provided. The microelectronic element is provided with at least two adjusting pieces, a support structure and a micro-mirror structure, and the at least two adjusting pieces are arranged along a first direction. When the adjustment process of the deflection angle of the micro-mirror structure is needed to be realized, each adjusting piece is elongated or shortened along a second direction, so as to drive the support beam to rotate around a rotation axis perpendicular to the first direction, so that the support beam can in turn drive the support column and the rotating beam to rotate, and then the rotating beam can drive the micro-mirror structure to rotate around the rotation axis perpendicular to the first direction, so as to make the micro-mirror structure tilt, and realize the adjustment process of the deflection angle of the micro-mirror structure. Compared with the microelectronic element in the related art, the microelectronic element provided by the embodiments of the present application simplifies the structure of the micro-mirror, and the adjustment process of the deflection angle of the micro-mirror is more convenient.

[0065] The exemplary embodiments will be described in detail herein with reference to the attached drawings. In the following description, like reference numerals refer to like elements, unless the context clearly dictates otherwise. The following description of exemplary embodiments is not representative of all possible embodiments consistent with the present application. Instead, it is merely intended to provide an example of apparatus and methods consistent with some aspects of the present application as detailed in the appended claims.

[0066] The technical solutions of the present application and how the technical solutions solve the above technical problems will be described in detail below with specific embodiments. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments. The embodiments of the present application will be described below with reference to the accompanying drawings.

[0067] With reference to Figures 1-4 The embodiment of the present application provides a microelectronic element, comprising a substrate 100, at least two adjusting members 200, a support structure 300 and a micro-mirror structure 400; the at least two adjusting members 200 are arranged along a first direction (i.e. the x direction in the figure), each adjusting member 200 is arranged to be extended or contracted along a second direction, and the first end of the adjusting member 200 is arranged on the substrate 100. The support structure 300 comprises a support beam 310, a support column 320 and a rotating beam 330, the second end of the adjusting member 200 is connected to the support beam 310, the surface of the support beam 310 away from the substrate 100 is connected to the rotating beam 330 through the support column 320, and the surface of the rotating beam 330 away from the support beam 310 is connected to the micro-mirror structure 400.

[0068] When the adjusting process of the deflection angle of the micro-mirror structure 400 needs to be implemented, each adjusting member 200 is extended or contracted along the second direction (i.e. the y direction in the figure), so as to drive the support beam 310 to rotate around the rotating shaft perpendicular to the first direction and parallel to the substrate 100, so that the support beam 310 can in turn drive the support column 320 and the rotating beam 330 to rotate, and then the rotating beam 330 can drive the micro-mirror structure 400 to rotate around the rotating shaft perpendicular to the first direction, so as to implement the adjusting process of the deflection angle of the micro-mirror structure 400.

[0069] For example, the second direction is perpendicular to the first direction, i.e. the second direction is perpendicular to the plane where the substrate 100 is located, and the adjusting member 200 can move along the direction close to or away from the substrate 100. It is easy to understand that the second direction can also be arranged in other directions, for example, the second direction can form an angle of 45° or 60° with the first direction, and the embodiment of the present application does not make further limitation.

[0070] With reference to Figure 1 and Figure 2In the embodiment of the present application, the number of the adjusting members 200 is set to three, two of which are respectively arranged at the ends of the support beam 310 along the first direction, and the other is arranged at the middle of the support beam 310 along the first direction. When the deflection angle of the micro-mirror structure 400 is adjusted by using the three adjusting members 200, the length of each adjusting member 200 along the second direction is adjusted, so that the length of the three adjusting members 200 along the first direction gradually increases or decreases in order, so that the distance between one end of the support beam 310 along the first direction and the substrate 100 is greater or less than the distance between the other end of the support beam 310 along the first direction and the substrate 100, thereby realizing the adjustment process of the deflection angle of the micro-mirror structure 400.

[0071] The following will be described in combination with the accompanying drawings Figure 2 The support structure 300 is described. In the embodiment of the present application, the support beam 310 and the rotating beam 330 both extend along the first direction, and the support beam 310 is arranged opposite to the rotating beam 330. The first end of the support column 320 is connected to the support beam 310, and the second end of the support column 320 is connected to the rotating beam 330, so that the support beam 310 can drive the rotating beam 330 to move through the support column 320. For example, the number of the support columns 320 is set to two, and the two support columns 320 are arranged along the first direction, and each support column 320 extends along the second direction.

[0072] In addition, it should be noted that the support beam 310, the support column 320 and the rotating beam 330 can all be provided with conductive lines, so that the rotating beam 330 can be electrically connected to the support beam 310 through the support column 320, thereby realizing the electrical connection between the micro-mirror structure 400 and the support beam 310, so that the function of the support structure 300 is more abundant.

[0073] Referring to Figures 1-2 In the embodiment of the present application, the micro-mirror structure 400 includes two micro-mirror units 410 and a connecting portion 420. The two micro-mirror units 410 are arranged along the third direction, and the third direction is perpendicular to the first direction. The rotating beam 330 is arranged between the two micro-mirror units 410, so that the two micro-mirror units 410 are arranged on both sides of the rotating beam 330 along the first direction. The connecting portion 420 is connected to the surface of the rotating beam 330 away from the support beam 310. The first end of the connecting portion 420 is connected to one of the micro-mirror units 410, and the second end of the connecting portion 420 is connected to the other micro-mirror unit 410, so that the rotating beam 330 can drive the two micro-mirror units 410 to rotate around the rotating shaft perpendicular to the first direction through the connecting portion 420.

[0074] Exemplarily, in the first direction, the connecting portion 420 is arranged at the middle of the rotating beam 330. The two micro-mirror units 410 are integrally formed with the connecting portion 420, so that the forming process of the micro-mirror structure 400 is more convenient, and the connection between the micro-mirror units 410 and the connecting portion 420 is more stable. In addition, in the embodiment of the present application, the micro-mirror units 410 can also be arranged in various shapes, for example, the shape of the micro-mirror units 410 can be arranged as a square, or the shape of the micro-mirror units 410 can also be arranged as a circle.

[0075] By adopting the above technical scheme, when the deflection angle of the micro-mirror structure 400 is adjusted by using the three adjusting members 200, the support beam 310 rotates around the rotating shaft perpendicular to the first direction, so that the support beam 310 drives the rotating beam 330 to move through the support column 320, the rotating beam 330 is in contact with the connecting portion 420, and the connecting portion 420 is driven to move by the two micro-mirror units 410, so as to realize the adjustment of the angle of the micro-mirror units 410.

[0076] With reference to Figure 1 In the embodiment of the present application, the substrate 100 is provided with an electrostatic attraction layer 110 to drive the micro-mirror units 410 to approach or move away from the substrate 100, so that the micro-mirror structure 400 rotates around the rotating shaft parallel to the first direction, and the rotating mode of the micro-mirror structure 400 is more diverse, and the use of the micro-mirror structure 400 is more convenient. In addition, the surface of the electrostatic attraction layer 110 away from the substrate 100 is also formed with a dielectric layer 270, so as to separate the electrostatic attraction layer 110 from the adjusting member 200 through the dielectric layer 270, and reduce the possibility of contact between the adjusting member 200 and the electrostatic attraction layer 110.

[0077] Exemplarily, the electrostatic attraction layer 110 includes a plurality of electrostatic attraction portions 111, each of which can store electric charges to generate electrostatic attraction to the micro-mirror units 410. Specifically, in the plane of the substrate 100, the plurality of electrostatic attraction portions 111 are distributed in multiple rows and multiple columns, each of which is rectangular, and at least part of the electrostatic attraction portions 111 are arranged on one side of the rotating beam 330 along the first direction to attract one of the micro-mirror units 410; at least part of the electrostatic attraction portions 111 are arranged on the other side of the rotating beam 330 along the first direction to attract the other micro-mirror unit 410, so that the two micro-mirror units 410 can be attracted by the plurality of electrostatic attraction portions 111, and the micro-mirror structure 400 can be driven to rotate around the rotating shaft parallel to the first direction by changing the attraction force of the two micro-mirror units 410 to the electrostatic attraction layer 110.

[0078] By adopting the above technical solution, when the micro-mirror structure 400 is driven to move by the electrostatic attraction layer 110 to change the deflection angle of the micro-mirror structure 400, the plurality of electrostatic attraction parts 111 are adjusted so that the charge stored by the part of the electrostatic attraction parts 111 arranged on one side of the rotating beam 330 in the first direction is more than the charge stored by the other part of the electrostatic attraction parts 111, thereby changing the attraction force of the electrostatic attraction layer 110 on the two micro-mirror units 410, so that the attraction force on one of the micro-mirror units 410 is greater than the attraction force on the other micro-mirror unit 410, and then the distance between the micro-mirror unit 410 with greater attraction force and the substrate 100 is less than the distance between the other micro-mirror unit 410 and the substrate 100, thereby realizing the adjustment process of the deflection angle of the micro-mirror structure 400.

[0079] With reference to Figure 3 and Figure 4 In the embodiment of the present application, the adjusting member 200 can be provided in various structures, as long as it can drive the support beam 310 to rotate to realize the adjustment process of the deflection angle of the micro-mirror structure 400 through the support structure 300.

[0080] For example, the following will be described in combination with the accompanying drawings Figure 3 The structure of one of the adjusting members 200 is described, the adjusting member 200 includes a first electrode plate 210 and a second electrode plate 230 capable of storing charges, and an elastic connecting member 220 connecting the first electrode plate 210 and the second electrode plate 230; the first electrode plate 210 and the second electrode plate 230 are arranged in the second direction, one of the first electrode plate 210 and the second electrode plate 230 is connected to the substrate 100, and the other is connected to the support beam 310; one end of the elastic connecting member 220 is connected to the first electrode plate 210, and the other end is connected to the second electrode plate 230.

[0081] By adopting the above technical solution, when the length of the adjusting member 200 in the second direction is adjusted, the amount of charge stored by the first electrode plate 210 and the second electrode plate 230 is adjusted, thereby adjusting the attraction force between the first electrode plate 210 and the second electrode plate 230, and then the distance between the first electrode plate 210 and the second electrode plate 230 in the second direction can be adjusted, and the elastic connecting member 220 is elongated or shortened, to realize the adjustment process of the length of the adjusting member 200 in the second direction.

[0082] When it is needed to reset the micromirror structure 400, the amount of the electric charges stored in the first electrode plate 210 and the second electrode plate 230 is adjusted to the initial state, the elastic connecting member 220 can drive the first electrode plate 210 or the second electrode plate 230 to return to the initial state, and then the elastic connecting member 220 can play a certain reset role. Moreover, when the distance between the first electrode plate 210 and the second electrode plate 230 is adjusted, the elastic connecting member 220 can play a certain buffering role in the adjustment process of the distance between the first electrode plate 210 and the second electrode plate 230, so as to reduce the possibility that the breakdown occurs due to the too small distance between the first electrode plate 210 and the second electrode plate 230, or the adjustment member 200 is disabled due to the too large distance between the first electrode plate 210 and the second electrode plate 230.

[0083] For example, the second electrode plate 230 is connected with the support beam 310, and the first electrode plate 210 is connected with the substrate 100. It is easily understood that the second electrode plate 230 can be electrically connected with the support beam 310, so that the electric charges stored in the second electrode plate 230 can come from the micromirror structure 400; or the electric charges stored in the second electrode plate 230 can also come from other components, and the embodiments of the present application do not make further limitation in this regard.

[0084] In order to reduce the possibility that the first electrode plate 210 and the second electrode plate 230 are short-circuited and thus the adjustment member 200 is damaged, in the embodiments of the present application, the first electrode plate 210 is provided with an insulating layer 211 connected with one end of the elastic connecting member 220 away from the second electrode plate 230; and / or the second electrode plate 230 is provided with an insulating layer 211 connected with one end of the elastic connecting member 220 away from the first electrode plate 210, so as to separate the first electrode plate 210 and the second electrode plate 230 by the insulating layer 211, and thus reduce the possibility that the first electrode plate 210 and the second electrode plate 230 contact with each other and are short-circuited.

[0085] Moreover, when the elastic connecting member 220 is made of a conductive material, the insulating layer 211 is arranged between the elastic connecting member 220 and the second electrode plate 230 and / or the first electrode plate 210, so as to separate the elastic connecting member 220 from the second electrode plate 230 and / or the first electrode plate 210, and thus reduce the possibility that the first electrode plate 210 and the second electrode plate 230 are short-circuited through the elastic connecting member 220.

[0086] In the embodiments of the present application, the adjustment member 200 can also be arranged in other structures, for example, referring to Figure 4 The adjustment member 200 can also be arranged to include a resistance heat-conducting layer 240, an expansion layer 250 and a fixing layer 260, a first surface of the expansion layer 250 is connected with the resistance heat-conducting layer 240, a second surface of the expansion layer 250 is connected with the fixing layer 260, and the thermal expansion coefficient of the expansion layer 250 is greater than the thermal expansion coefficient of the fixing layer 260.

[0087] When it is needed to adjust the length of the adjusting member 200 along the second direction, the electric current is passed through the electrically resistive heat conducting layer 240, so that the temperature of the electrically resistive heat conducting layer 240 is raised and the expansion layer 250 is heated, so that the expansion layer 250 is expanded by the heat, and the fixed layer 260 arranged on the second surface of the expansion layer 250 supports the expansion layer 250 to some extent, so that the expansion layer 250 can expand along the second direction, thereby realizing the adjusting process of the length of the adjusting member 200 along the second direction.

[0088] Specifically, the expansion layer 250 is arranged in a ring shape, and the fixed layer 260 is arranged in the inside of the expansion layer 250; and the electrically resistive heat conducting layer 240 is arranged on the outside of the expansion layer 250, and the end of the electrically resistive heat conducting layer 240 is close to the base 100. That is, the first surface of the expansion layer 250 is arranged on the outside of the expansion layer 250, and the second surface of the expansion layer 250 is arranged on the inside of the expansion layer 250; and the fixed layer 260 can be arranged in various shapes, for example, the fixed layer 260 can be arranged in a ring shape, or the fixed layer 260 can also be arranged in a plate shape, and the embodiments of the present application do not make further limitation in this regard.

[0089] By using the above technical solution, when it is needed to adjust the length of the adjusting member 200 along the second direction, the electrically resistive heat conducting layer 240 arranged on the outside of the expansion layer 250 heats the expansion layer 250, so that the expansion layer 250 is expanded by the heat, and the fixed layer 260 arranged on the inside of the expansion layer 250 supports the inside of the expansion layer 250 to some extent, so that the expansion layer 250 can expand towards the outside of the expansion layer 250, thereby increasing the length of the expansion layer 250 along the second direction, so as to realize the adjusting process of the length of the adjusting member 200 along the second direction; and the end of the electrically resistive heat conducting layer 240 is close to the base 100, so that the electrically resistive heat conducting layer 240 fully covers the outside of the expansion layer 250, so as to ensure the heat receiving area of the expansion layer 250, and at the same time, reduce the possibility of short circuit caused by the contact of the two ends of the electrically resistive heat conducting layer 240.

[0090] It is easy to understand that when the support column 320 is arranged in a plurality of support columns, and the plurality of support columns 320 are arranged along the first direction, each support column 320 can also be arranged to be telescopic along the second direction, so that the deflection angle of the micro-mirror structure 400 can be further adjusted on the basis of the plurality of adjusting members 200, thereby increasing the angle adjusting range of the micro-mirror structure 400; and the structure of the support column 320 can be the same as the structure of the adjusting member 200, and the embodiments of the present application do not make further limitation in this regard.

[0091] Reference Figure 5In the embodiment of the present application, the plurality of micro-mirror structures 400 are arranged in multiple rows and multiple columns, and each micro-mirror structure 400 is connected to at least two adjusting members 200 through a support structure 300, so that each micro-mirror structure 400 can be adjusted in the deflection angle through the corresponding adjusting member 200, thereby increasing the application range of the microelectronic element and improving the use effect of the microelectronic element.

[0092] In summary, when the adjusting process of the deflection angle of the micro-mirror structure 400 is needed, each adjusting member 200 is elongated or shortened in the second direction, thereby driving the support beam 310 to rotate around the rotation axis perpendicular to the first direction, so that the support beam 310 can in turn drive the support column 320 and the rotating beam 330 to rotate, and then the rotating beam 330 can drive the micro-mirror structure 400 to rotate around the rotation axis perpendicular to the first direction, so that the micro-mirror structure 400 is inclined; and the plurality of electrostatic attraction parts 111 are adjusted, so that the charge stored in the part of the electrostatic attraction parts 111 arranged on one side of the rotating beam 330 in the first direction is more than the charge stored in the other part of the electrostatic attraction parts 111, thereby changing the attraction force of the electrostatic attraction layer 110 on the two micro-mirror units 410, so that the attraction force on one of the micro-mirror units 410 is greater than the attraction force on the other micro-mirror unit 410, and then the distance between the micro-mirror unit 410 with the greater attraction force and the substrate 100 is less than the distance between the other micro-mirror unit 410 and the substrate 100, thereby realizing the adjusting process of the deflection angle of the micro-mirror structure 400, simplifying the structure of the micro-mirror, and making the adjusting process of the deflection angle of the micro-mirror more convenient.

[0093] The embodiment of the present application also provides an electronic device, which can be applied to a car laser radar and the like, and includes the microelectronic element in any of the above-mentioned embodiments. Since the electronic device provided by the embodiment of the present application includes the microelectronic element in any of the above-mentioned embodiments, the electronic device has the advantages and beneficial effects of the microelectronic element in any of the above-mentioned embodiments, which will not be repeated here.

[0094] Reference Figure 6 and Figure 7The embodiment of the present application further provides a preparation method of the microelectronic element, comprising: forming a first sacrificial layer 500 on a surface of a substrate 100; forming an adjusting member 200 and a support beam 310 on the first sacrificial layer 500, wherein the support beam 310 is formed on a surface of the first sacrificial layer 500 away from the substrate 100; a first end of the adjusting member 200 is connected to the substrate 100, and a second end of the adjusting member 200 is connected to the support beam 310; forming a second sacrificial layer 600 on a surface of the support beam 310 away from the first sacrificial layer 500; forming a support column 320 and a rotating beam 330 on the second sacrificial layer 600, wherein the rotating beam 330 is formed on a surface of the second sacrificial layer 600 away from the support beam 310; the support column 320 is connected to the support beam 310 and the rotating beam 330; forming a micro-mirror structure 400 on a surface of the rotating beam 330 away from the second sacrificial layer 600; and removing the first sacrificial layer 500 and the second sacrificial layer 600. The preparation method specifically comprises the following steps:

[0095] S101, forming a first sacrificial layer 500 on a surface of a substrate 100;

[0096] In some possible embodiments, the substrate 100 is used as a support component of the microelectronic element to support other components arranged thereon, and the substrate 100 can be made of a printed circuit board (PCB) or a material such as ceramic, silicon, etc.

[0097] It is easy to understand that the first sacrificial layer 500 can be formed on the substrate 100 in various ways, such as coating or chemical vapor deposition (CVD) method, and the embodiment of the present application does not make further limitation.

[0098] For example, the micro-mirror structure 400 comprises two micro-mirror units 410, and the preparation method of the microelectronic element further comprises: forming an electrostatic attraction layer 110 on the substrate 100 to drive the micro-mirror units 410 to approach or move away from the substrate 100 through the electrostatic attraction layer 110, so as to increase the deflection angle of the micro-mirror structure 400.

[0099] For example, the micro-mirror structure 400 comprises two micro-mirror units 410, and the preparation method of the microelectronic element further comprises: forming an electrostatic attraction layer 110 on the substrate 100 to drive the micro-mirror units 410 to approach or move away from the substrate 100 through the electrostatic attraction layer 110, so as to increase the deflection angle of the micro-mirror structure 400.

[0100] After the electrostatic attraction layer 110 is formed on the substrate 100, a dielectric layer 270 can also be deposited on the surface of the electrostatic attraction layer 110 away from the substrate 100, so that the first sacrificial layer 500 can be formed on the surface of the dielectric layer 270 away from the electrostatic attraction layer 110, to separate the adjusting member 200 from the electrostatic attraction layer 110 through the dielectric layer 270.

[0101] S102, forming the adjusting member 200 and the support beam 310 on the first sacrificial layer 500, wherein the support beam 310 is formed on the surface of the first sacrificial layer 500 away from the substrate 100; the first end of the adjusting member 200 is connected to the substrate 100, and the second end of the adjusting member 200 is connected to the support beam 310;

[0102] Referring to Figures 7-9 For example, the adjusting member 200 can be provided to include the electrically resistive and heat-conductive layer 240, the expansion layer 250, and the fixing layer 260; the first surface of the expansion layer 250 is connected to the electrically resistive and heat-conductive layer 240, and the second surface of the expansion layer 250 is connected to the fixing layer 260. It can be understood that the fixing layer 260, the expansion layer 250, and the electrically resistive and heat-conductive layer 240 can be deposited in the transition hole 510 by a physical vapor deposition (PVD) method, an atomic layer deposition (ALD) method, and a chemical vapor deposition (CVD) method, to realize the forming process of the adjusting member 200.

[0103] In the embodiment of the present application, the adjusting member 200 includes the first and second electrode plates 210 and 230 capable of storing electric charges, and the elastic connecting member 220 connecting the first and second electrode plates 210 and 230; the first and second electrode plates 210 and 230 are arranged in the second direction, one of the first and second electrode plates 210 and 230 is connected to the substrate 100, and the other is connected to the support beam 310; one end of the elastic connecting member 220 is connected to the first electrode plate 210, and the other end is connected to the second electrode plate 230. The step of forming the above adjusting member 200 on the first sacrificial layer 500 includes:

[0104] S1021, forming the transition hole 510 on the first sacrificial layer 500, wherein the length of the transition hole 510 in the second direction is equal to the thickness of the first sacrificial layer 500;

[0105] For example, part of the first sacrificial layer 500 can be removed by etching or the like to form the transition hole 510, and the length of the transition hole 510 in the second direction is equal to the thickness of the first sacrificial layer 500, so that the first electrode plate 210, the elastic connecting member 220, and the second electrode plate 230 can be formed in the transition hole 510.

[0106] S1022, forming the first electrode plate 210 on one end of the transition hole 510 close to the substrate 100;

[0107] In the embodiment of the present application, the first electrode plate 210 can be formed on the side of the transition hole 510 close to the substrate 100 by physical vapor deposition (PVD) or the like, so that the first electrode plate 210 can be formed on the surface of the dielectric layer 270 away from the substrate 100, and the first electrode plate 210 is electrically connected to the power supply element, so that the power supply element can provide the first electrode plate 210 with electric charges.

[0108] S1023, forming the elastic connecting piece 220 on the surface of the first electrode plate 210 away from the substrate 100;

[0109] With reference to Figures 7-10 , for example, in the step of forming the elastic connecting piece 220 on the surface of the first electrode plate 210 away from the substrate 100, the method comprises:

[0110] S10231, forming the insulating layer 211 on the surface of the first electrode plate 210 away from the substrate 100;

[0111] In the embodiment of the present application, the insulating layer 211 can be formed on the first electrode plate 210 by deposition or the like, so as to separate the first electrode plate 210 and the second electrode plate 230 by the insulating layer 211, so as to reduce the possibility of short circuit between the first electrode plate 210 and the second electrode plate 230; and the first electrode plate 210 and the elastic connecting piece 220 can also be separated by the insulating layer 211, so as to reduce the possibility of short circuit between the first electrode plate 210 and the second electrode plate 230 through the elastic connecting piece 220.

[0112] S10232, forming a plurality of third sacrificial layers 700 and a plurality of conductive layers 222 on the surface of the insulating layer 211 away from the first electrode plate 210, and the plurality of third sacrificial layers 700 and the plurality of conductive layers 222 are alternately arranged in sequence in the direction away from the substrate 100;

[0113] For example, the conductive layer 222 can be an interconnection layer, and it is easy to understand that the third sacrificial layer 700 can be formed on the substrate 100 by coating or chemical vapor deposition (CVD) method, and then the conductive layer 222 can be formed on the surface of the first sacrificial layer 500 away from the substrate 100 by BEOL (Back End Of Line) post technology; and then the third sacrificial layer 700 is formed on the surface of the conductive layer 222 away from the substrate 100, so as to form the elastic connecting piece 220 by alternately stacking the plurality of third sacrificial layers 700 and the plurality of conductive layers 222.

[0114] S10233, forming an extension 221 on each third sacrificial layer 700, and in the adjacent two extensions 221, one of the extensions 221 is connected to one end of the conductive layer 222, and the other extension 221 is connected to the other end of the conductive layer 222, so that the plurality of extensions 221 and the plurality of conductive layers 222 constitute the elastic connecting piece 220;

[0115] Exemplarily, part of the third sacrificial layer 700 can be removed by etching or the like to form a through hole 710 in each third sacrificial layer 700, and the length of the through hole 710 in the second direction is equal to the thickness of the corresponding third sacrificial layer 700; then the extension 221 is formed in the through hole 710 by physical vapor deposition (PVD) so that the extension 221 can be connected with the conductive layer 222.

[0116] Moreover, between two adjacent third sacrificial layers 700, two through holes 710 are respectively arranged at two ends of the conductive layer 222, so that the two adjacent extensions 221 are respectively connected at the two ends of the conductive layer 222, thereby the elastic connecting piece 220 is arranged as an S-shaped elastic connecting piece 220 to release a certain stress through the S-shaped elastic connecting piece 220 and can play a certain buffering role between the first electrode plate 210 and the second electrode plate 230.

[0117] It is easy to understand that in the embodiment of the present application, the through hole 710 can be formed in the third sacrificial layer 700 after forming a layer of third sacrificial layer 700, and the extension 221 is deposited in the through hole 710, and then the conductive layer 222 is formed on the surface of the third sacrificial layer 700 away from the substrate 100;

[0118] Or, a plurality of third sacrificial layers 700 and a plurality of conductive layers 222 can be formed on the substrate 100 in turn, then the through hole 710 is formed in the third sacrificial layer 700, and then the extension 221 is deposited in each through hole 710 to form the S-shaped elastic connecting piece 220, so that one end of the S-shaped elastic connecting piece 220 is connected with the insulating layer 211 and the other end is connected with the second electrode plate 230, to realize the forming process of the elastic connecting piece 220.

[0119] S10234, remove the third sacrificial layer 700;

[0120] Exemplarily, after forming a plurality of extensions 221 and a plurality of conductive layers 222 in the transition hole 510, the third sacrificial layer 700 can be removed by etching or the like, so that the elastic connecting piece 220 is reserved between the insulating layer 211 and the second electrode plate 230, to connect the first electrode plate 210 and the second electrode plate 230 through the elastic connecting piece 220.

[0121] S1024, form the second electrode plate 230 at one end of the elastic connecting piece 220 away from the first electrode plate 210;

[0122] In the embodiment of the present application, the second electrode plate 230 can be formed at the end of the transition hole 510 away from the substrate 100 by physical vapor deposition (PVD) or the like, so that the surface of the second electrode plate 230 away from the substrate 100 is flush with the end of the transition hole 510 away from the substrate 100.

[0123] For example, when the end of the elastic connecting member 220 away from the substrate 100 is the extension 221, the second electrode plate 230 can be formed on the surface of the third sacrificial layer 700 corresponding to the extension 221, and the second electrode plate 230 is connected with the extension 221, and the surface of the second electrode plate 230 away from the substrate 100 is flush with the end of the transition hole 510 away from the substrate 100, and then the third sacrificial layer 700 is removed; when the end of the elastic connecting member 220 away from the substrate 100 is the conductive layer 222, the second electrode plate 230 can be formed on the surface of the conductive layer 222 away from the substrate 100, so that the second electrode plate 230 can be connected with the conductive layer 222, and the surface of the second electrode plate 230 away from the substrate 100 is flush with the end of the transition hole 510 away from the substrate 100.

[0124] After the adjusting member 200 is formed in the first sacrificial layer 500, the support beam 310 base can be deposited on the surface of the first sacrificial layer 500 away from the substrate 100 by physical vapor deposition (PVD), and then the support beam 310 base is patterned to form the support beam 310. It is easy to understand that an electrical connection structure can also be formed in the support beam 310, so that the support beam 310 can be electrically connected with the second electrode plate 230, and the embodiment of the present application does not make further limitation.

[0125] S103, forming a second sacrificial layer 600 on the surface of the support beam 310 away from the first sacrificial layer 500; forming a support column 320 and a rotating beam 330 in the second sacrificial layer 600, wherein the rotating beam 330 is formed on the surface of the second sacrificial layer 600 away from the support beam 310; the support column 320 connects the support beam 310 and the rotating beam 330.

[0126] It is easy to understand that in the embodiment of the present application, the second sacrificial layer 600 can be formed on the surface of the support beam 310 away from the first sacrificial layer 500 by coating or chemical vapor deposition (CVD) or the like, and then the accommodation hole 610 is formed in the second sacrificial layer 600 by etching or the like, so that the length of the accommodation hole 610 along the second direction is equal to the thickness of the second sacrificial layer 600, and then the support column 320 is deposited in the accommodation hole 610 by physical vapor deposition (PVD).

[0127] When the support column 320 is provided as a telescopic structure, for example, the support column 320 has the same structure as the adjusting member 200, the support column 320 can be formed in the accommodating hole 610 according to the forming mode of the adjusting member 200, and details are not described herein.

[0128] After the support column 320 is formed in the second sacrificial layer 600, a rotating beam 330 base is formed on the surface of the second sacrificial layer 600 away from the substrate 100 by a physical vapor deposition (PVD) method, and then the rotating beam 330 base is patterned to form the rotating beam 330, so that the rotating beam 330 is arranged opposite to the support beam 310, and the rotating beam 330 is connected to the support column 320 to realize the forming process of the rotating beam 330, so that the support beam 310, the support column 320 and the rotating beam 330 jointly constitute the support structure 300.

[0129] S104, forming a micro-mirror structure 400 on the surface of the rotating beam 330 away from the second sacrificial layer 600.

[0130] In the embodiment of the present application, after the forming process of the support column 320 and the rotating beam 330 is completed through the second sacrificial layer 600, a micro-mirror structure 400 base can be formed on the surface of the second sacrificial layer 600 away from the substrate 100 by a physical vapor deposition (PVD) method, and the micro-mirror structure 400 base is patterned to form the micro-mirror structure 400.

[0131] For example, when the micro-mirror structure 400 includes two micro-mirror units 410 and a connecting portion 420, the two micro-mirror units 410 are arranged opposite to the electrostatic attraction layer 110, so that the adjusting process of the deflection angle of the micro-mirror structure 400 can be realized by changing the attraction force of the electrostatic attraction layer 110 to the two micro-mirror units 410.

[0132] S105, removing the first sacrificial layer 500 and the second sacrificial layer 600.

[0133] In the embodiment of the present application, after the forming process of the micro-mirror structure 400 is completed, the first sacrificial layer 500 and the second sacrificial layer 600 can be removed together by etching or the like. Alternatively, after the adjusting member 200 and the support beam 310 are formed by the first sacrificial layer 500, the first sacrificial layer 500 can be removed, and then the second sacrificial layer 600 is formed on the surface of the support beam 310 away from the substrate 100, and after the forming process of the micro-mirror structure 400 is completed, the second sacrificial layer 600 is removed. The removal process of the first sacrificial layer 500 is not limited in the embodiment of the present application, as long as the forming process of the support column 320 and the rotating beam 330 can be ensured.

[0134] In summary, when the microelectronic element is prepared, the first sacrificial layer 500 is formed on the substrate 100, and the adjusting member 200 and the support beam 310 are formed by using the first sacrificial layer 500; then the second sacrificial layer 600 is formed on the surface of the support beam 310, and the support column 320 and the rotating beam 330 for connecting the micro-mirror structure 400 are formed by using the second sacrificial layer 600; when the adjusting process of the deflection angle of the micro-mirror structure 400 is needed to be realized, each adjusting member 200 can be elongated or shortened along the second direction, so as to drive the support beam 310 to rotate around the rotating shaft perpendicular to the first direction, so that the support beam 310 can drive the support column 320 and the rotating beam 330 to rotate in turn, and then the rotating beam 330 can drive the micro-mirror structure 400 to rotate around the rotating shaft perpendicular to the first direction, so as to make the micro-mirror structure 400 tilt, realize the adjusting process of the deflection angle of the micro-mirror structure 400, simplify the structure of the micro-mirror, and make the adjusting process of the deflection angle of the micro-mirror more convenient.

[0135] Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. It is intended that the specification and examples be considered as exemplary only, with the true scope and spirit of the application being indicated by the following claims.

[0136] It is to be understood that the application is not limited to the precise construction described and shown herein and that changes can be made in various details without departing from the scope of the application. The scope of the application is limited only by the claims appended hereto.

Claims

1. A microelectronic component, characterized in that, The microelectronic element comprises a substrate, at least two adjusting members, a support structure and a micro-mirror structure. The at least two adjusting members are arranged along a first direction, a first end of each adjusting member is arranged on the substrate, and a second end of each adjusting member is arranged to be extendable along a second direction. The support structure comprises a support beam, a support column and a rotating beam, the support beam is connected to the second end of each adjusting member, the support beam is connected to the rotating beam through the support column away from the surface of the substrate, and the rotating beam is connected to the micro-mirror structure away from the surface of the support beam. The support beam and the rotating beam both extend along the first direction. The micro-mirror structure comprises two micro-mirror units and a connecting part, the two micro-mirror units are arranged along a third direction, the third direction is perpendicular to the first direction, and the rotating beam is arranged between the two micro-mirror units. The connecting part is connected to the surface of the rotating beam away from the support beam, a first end of the connecting part is connected to one of the micro-mirror units, and a second end of the connecting part is connected to the other micro-mirror unit. The adjusting member comprises a first electrode plate and a second electrode plate capable of storing electric charges, and an elastic connecting member. The first electrode plate and the second electrode plate are arranged apart along the second direction, one of the first electrode plate and the second electrode plate is connected to the substrate, and the other is connected to the support beam. One end of the elastic connecting member is connected to the first electrode plate, and the other end is connected to the second electrode plate.

2. The microelectronic element as in claim 1, wherein, The support beam is arranged opposite to the rotating beam. The number of the support columns is at least two, a first end of the support column is connected to the support beam, and a second end of the support column is connected to the rotating beam.

3. The microelectronic element as in claim 1, wherein: The substrate is provided with an electrostatic attraction layer to make the micro-mirror unit close to or away from the substrate.

4. The microelectronic element as in claim 3, wherein: The electrostatic attraction layer comprises a plurality of electrostatic attraction parts, and the plurality of electrostatic attraction parts are distributed in multiple rows and multiple columns.

5. The microelectronic element as in claim 1, wherein: The second direction is perpendicular to the first direction. The number of the adjusting members is three, two of the adjusting members are arranged at the end of the support beam along the first direction respectively, and the other adjusting member is arranged at the middle of the support beam along the first direction.

6. The microelectronic element of claim 1, wherein: The number of the micro-mirror structures is multiple, and the multiple micro-mirror structures are distributed in multiple rows and multiple columns; each micro-mirror structure is connected to at least two adjusting members through one support structure.

7. The microelectronic element of claim 1, wherein: The first electrode plate is provided with an insulating layer, and the insulating layer is connected to one end of the elastic connecting member away from the second electrode plate. The second electrode plate is provided with an insulating layer, and the insulating layer is connected to one end of the elastic connecting member away from the first electrode plate.

8. An electronic device, comprising: The microelectronic element comprises the micro-mirror structure as claimed in any one of claims 1-7.

9. A method for producing a microelectronic element according to any one of claims 1 to 7, characterized in that The microelectronic element comprises: forming a first sacrificial layer on the surface of the substrate; forming the adjusting member and the support beam on the first sacrificial layer, wherein the support beam is formed on the surface of the first sacrificial layer away from the substrate, a first end of the adjusting member is connected to the substrate, and a second end of the adjusting member is connected to the support beam; forming a second sacrificial layer on the surface of the support beam away from the first sacrificial layer; forming a support column and a rotating beam in the second sacrificial layer, wherein the rotating beam is formed on a surface of the second sacrificial layer away from the support beam, and the support column connects the support beam and the rotating beam; forming a micro-mirror structure on a surface of the rotating beam away from the second sacrificial layer; removing the first sacrificial layer and the second sacrificial layer; in the step of forming a regulating member in the first sacrificial layer, comprising: forming a transition hole in the first sacrificial layer, wherein a length of the transition hole along a second direction is equal to a thickness of the first sacrificial layer; forming a first electrode plate on an end of the transition hole close to the substrate; forming an elastic connecting member on a surface of the first electrode plate away from the substrate; forming a second electrode plate on an end of the elastic connecting member away from the first electrode plate.

10. The method of manufacturing a microelectronic element of claim 9, wherein, the micro-mirror structure comprises two micro-mirror units, and the preparation method further comprises: forming an electrostatic attraction layer on the substrate to make the micro-mirror units close to or away from the substrate through the electrostatic attraction layer.

11. The method of fabricating a microelectronic element of claim 9, wherein, in the step of forming an elastic connecting member on a surface of the first electrode plate away from the substrate, comprising: forming an insulating layer on a surface of the first electrode plate away from the substrate; forming a plurality of third sacrificial layers and a plurality of conductive layers on a surface of the insulating layer away from the first electrode plate, wherein the plurality of third sacrificial layers and the plurality of conductive layers are arranged alternately in a direction away from the substrate; forming a connecting portion in each of the third sacrificial layers, wherein one of the connecting portions connects one end of the conductive layer, and the other of the connecting portions connects the other end of the conductive layer, so that the plurality of connecting portions and the plurality of conductive layers form the elastic connecting member; removing the third sacrificial layers.

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