High frequency module and communication device

Abstract

Increasing the element value of the circuit element included in the electronic component. In the high-frequency module (100), the conductive layer (6) covers the main surface (51) on the opposite side to the mounting substrate (9) side in the resin layer (5) and the main surface (11) on the opposite side to the mounting substrate (9) side in the electronic component (1). The electronic component (1) has an electronic component body (2) and a plurality of external electrodes (3). The electronic component body (2) includes an electrical insulator portion (21) and a conductor portion (14) arranged in the electrical insulator portion (21) and constituting at least a part of the circuit element (15) of the electronic component (1). The electronic component body (2) has a third main surface (23) and a fourth main surface (24) facing each other and an outer peripheral surface (25). The third main surface (23) constitutes the main surface (11) of the electronic component (1) and is in contact with the conductive layer (6). A plurality of external electrodes (3) are respectively provided on the fourth main surface (24) of the electronic component body (2) and do not reach the third main surface (23).

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly to a high-frequency module including an electronic component and a communication device including the high-frequency module. Background Art

[0002] Patent Document 1 discloses a module (high-frequency module) including a module substrate (mounting substrate), a chip coil (electronic component), a resin layer, and a metal film (conductive layer).

[0003] In the module disclosed in Patent Document 1, the chip coil is mounted on electrodes provided on the mounting surface of the module substrate.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: International Publication No. 2014 / 013831 Summary of the Invention

[0007] Problems to be solved by the invention

[0008] In high-frequency modules like the one disclosed in Patent Document 1, to prevent short circuits between the two external electrodes of an electronic component, such as a chip coil, and the metal film, a portion of the resin layer must be interposed between the electronic component and the metal film in the thickness direction of the module substrate. Consequently, in the high-frequency module disclosed in Patent Document 1, it is difficult to increase the component value (e.g., inductance or capacitance) of the circuit elements (e.g., inductors or capacitors) included in the electronic component.

[0009] An object of the present invention is to provide a high-frequency module and a communication device capable of increasing the element value of circuit elements included in an electronic component.

[0010] Means used to solve problems

[0011] A high-frequency module according to one embodiment of the present invention comprises a mounting substrate, an electronic component, a resin layer, and a conductive layer. The mounting substrate has a first main surface and a second main surface facing each other. The electronic component is mounted on the first main surface of the mounting substrate. The resin layer is arranged on the first main surface of the mounting substrate and covers at least a portion of the outer peripheral surface of the electronic component. The conductive layer covers at least a portion of the main surface of the resin layer opposite to the mounting substrate side and at least a portion of the main surface of the electronic component opposite to the mounting substrate side. The electronic component has an electronic component body and a plurality of external electrodes. The electronic component body includes an electrical insulator portion and a conductor portion, the conductor portion being arranged within the electrical insulator portion and constituting at least a portion of a circuit element of the electronic component. The electronic component body has a third main surface and a fourth main surface facing each other and an outer peripheral surface. In the electronic component, the third main surface of the electronic component body constitutes the main surface of the electronic component and is in contact with the conductive layer. The plurality of external electrodes are respectively provided on the fourth main surface of the electronic component body and do not reach the third main surface.

[0012] A communication device according to one aspect of the present invention includes the high-frequency module described above and a signal processing circuit. The signal processing circuit is connected to the high-frequency module.

[0013] Effects of the Invention

[0014] The high-frequency module and communication device according to the above-described aspects of the present invention can increase the element value of circuit elements included in the electronic component. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a plan view of the high-frequency module according to the first embodiment.

[0016] Figure 2 The high frequency module shown above is Figure 1 XX line cross-sectional view.

[0017] Figure 3 The high frequency module shown above is Figure 1 YY line sectional view.

[0018] Figure 4 This is a partially enlarged cross-sectional view of the high-frequency module shown above.

[0019] Figure 5 This is a circuit diagram of a communication device equipped with the same high-frequency module.

[0020] Figure 6 This is a cross-sectional view of a high-frequency module according to Modification 1 of Embodiment 1.

[0021] Figure 7 This is a partially enlarged cross-sectional view of a high-frequency module according to a second modification of the first embodiment.

[0022] Figure 8 This is a circuit diagram of a high-frequency module according to Modification 3 of Embodiment 1.

[0023] Figure 9 This is a top view of a partially broken high-frequency module.

[0024] Figure 10 The high frequency module shown above is Figure 9 XX line cross-sectional view.

[0025] Figure 11 The high frequency module shown above is Figure 9 YY line sectional view.

[0026] Figure 12 This is a cross-sectional view of a high-frequency module according to the second embodiment.

[0027] Figure 13 This is a partially enlarged cross-sectional view of the high-frequency module shown above.

[0028] Figure 14 This is a perspective view showing another example of the first electronic component as viewed from the bottom surface side of an LC filter. DETAILED DESCRIPTION

[0029] In the following embodiments, etc., reference is made to Figures 1 to 4 , 6, 7, 9 to 14 are schematic diagrams, and the ratios of the sizes and thicknesses of the components in the diagrams do not necessarily reflect the actual dimensional ratios.

[0030] (Implementation Method 1)

[0031] For example, Figure 1 As shown in FIG. 2 , the high-frequency module 100 according to the first embodiment includes a mounting substrate 9, an electronic component 1, and a resin layer 5 (see FIG. 2 ). Figure 2 ) and conductive layer 6 (refer to Figure 2 ).like Figure 2 As shown, the mounting substrate 9 has a first main surface 91 and a second main surface 92 facing each other. The electronic component 1 is mounted on the first main surface 91 of the mounting substrate 9. The resin layer 5 is arranged on the first main surface 91 of the mounting substrate 9, covering the outer peripheral surface 13 of the electronic component 1. The conductive layer 6 covers the main surface 51 of the resin layer 5 on the side opposite to the mounting substrate 9, and the main surface 11 of the electronic component 1 on the side opposite to the mounting substrate 9. Figure 3 As shown, the electronic component 1 includes an electronic component body 2 and a plurality of external electrodes 3. The electronic component 1 is an SMD (Surface Mount Device).

[0032] In addition, if Figure 1 As shown in FIG. 2 , the high-frequency module 100 according to the first embodiment further includes a second electronic component 4 mounted on the first main surface 91 of the mounting substrate 9, which is different from the electronic component 1 (hereinafter also referred to as the first electronic component 1 ). Figure 2 As shown, the resin layer 5 covers the outer peripheral surface 43 of the second electronic component 4. The conductive layer 6 covers the main surface 41 of the second electronic component 4 on the side opposite to the mounting substrate 9 side.

[0033] In addition, if Figure 1 As shown in FIG. 2 , the high frequency module 100 further includes a third electronic component 7. The third electronic component 7 is mounted on the first main surface 91 of the mounting substrate 9. Figure 2 As shown, third electronic component 7 is shorter than first electronic component 1 and second electronic component 4. Resin layer 5 covers outer peripheral surface 73 of third electronic component 7. Resin layer 5 also covers main surface 71 of third electronic component 7 opposite to mounting substrate 9.

[0034] In addition, if Figure 1 As shown in FIG. 2 , the high frequency module 100 further includes a fourth electronic component 10. The fourth electronic component 10 is mounted on the first main surface 91 of the mounting substrate 9. Figure 2 As shown, the resin layer 5 covers the outer peripheral surface 103 of the fourth electronic component 10. The conductive layer 6 covers the main surface 101 of the fourth electronic component 10 on the side opposite to the mounting substrate 9 side.

[0035] Below, refer to Figures 1 to 5 The high-frequency module 100 and the communication device 300 according to the first embodiment will be described in more detail.

[0036] (1) High-frequency module and communication device

[0037] (1.1) Circuit Structure of High-Frequency Module and Communication Device

[0038] Reference Figure 5 The circuit configurations of the high-frequency module 100 and the communication device 300 according to the first embodiment will be described.

[0039] The high-frequency module 100 is used in, for example, a communication device 300. The communication device 300 is, for example, a portable phone (e.g., a smartphone), but is not limited thereto. For example, it may also be a wearable terminal (e.g., a smartwatch). The high-frequency module 100 is, for example, a module that can support the 4G (fourth generation mobile communication) standard, the 5G (fifth generation mobile communication) standard, etc. The 4G standard is, for example, the 3GPP (Third Generation Partnership Project) LTE (Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 100 is, for example, a module that can support carrier aggregation and dual connectivity.

[0040] The high-frequency module 100 is configured, for example, to amplify a transmission signal input from a signal processing circuit 301 and output the amplified signal to an antenna 310. Furthermore, the high-frequency module 100 is configured to amplify a reception signal input from an antenna 310 and output the amplified signal to the signal processing circuit 301. The signal processing circuit 301 is not a component of the high-frequency module 100, but rather a component of a communication device 300 including the high-frequency module 100. The high-frequency module 100 according to Embodiment 1 is controlled, for example, by the signal processing circuit 301 included in the communication device 300. The communication device 300 includes the high-frequency module 100 and the signal processing circuit 301. The communication device 300 further includes an antenna 310. The communication device 300 further includes a circuit substrate on which the high-frequency module 100 is mounted. The circuit substrate is, for example, a printed wiring board. The circuit substrate has a ground electrode to which a ground potential is applied.

[0041] The signal processing circuit 301 includes, for example, an RF signal processing circuit 302 and a baseband signal processing circuit 303. The RF signal processing circuit 302 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on high-frequency signals. The RF signal processing circuit 302 performs signal processing, such as up-conversion, on the high-frequency signal (transmit signal) output from the baseband signal processing circuit 303, and outputs the processed high-frequency signal. Furthermore, the RF signal processing circuit 302 performs signal processing, such as down-conversion, on the high-frequency signal (receive signal) output from the high-frequency module 100, and outputs the processed high-frequency signal to the baseband signal processing circuit 303. The baseband signal processing circuit 303 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 303 generates an I-phase signal and a Q-phase signal from the baseband signal. The baseband signal can be, for example, an externally input audio signal or image signal. The baseband signal processing circuit 303 combines the I-phase signal and the Q-phase signal to perform IQ modulation processing, and outputs the transmit signal. At this time, a transmit signal is generated as a modulated signal (IQ signal) obtained by amplitude-modulating a carrier signal of a predetermined frequency with a period longer than the carrier signal's period. The received signal processed by baseband signal processing circuit 303 is used, for example, as an image signal for image display or as an audio signal for a user of communication device 300. High-frequency module 100 transmits high-frequency signals (received and transmitted signals) between antenna 310 and RF signal processing circuit 302 of signal processing circuit 301.

[0042] The high-frequency module 100 includes multiple (e.g., three) transmit filters 131, 132, and 133. Furthermore, the high-frequency module 100 includes a power amplifier 111 and an output matching circuit 113. Furthermore, the high-frequency module 100 includes multiple (e.g., three) receive filters 171, 172, and 173. Furthermore, the high-frequency module 100 includes a low-noise amplifier 121 and an input matching circuit 123. Input matching circuit 123 includes, for example, a single inductor. Furthermore, the high-frequency module 100 includes a controller 115. Furthermore, the high-frequency module 100 includes a first switch 104, a second switch 105, and a third switch 106. In the high-frequency module 100, the inductor included in the input matching circuit 123 constitutes the first electronic component 1. Furthermore, in the high-frequency module 100, the transmit filter 131 constitutes the aforementioned second electronic component 4. Furthermore, in the high-frequency module 100, the power amplifier 111 constitutes the aforementioned third electronic component 7. Furthermore, in the high-frequency module 100 , the reception filter 171 constitutes the fourth electronic component 10 .

[0043] Furthermore, the high frequency module 100 includes a plurality of external connection terminals 8. The plurality of external connection terminals 8 include an antenna terminal 81, a signal input terminal 82, a signal output terminal 83, a control terminal 84, and a plurality of ground terminals 85 (see Figure 2 The plurality of ground terminals 85 are terminals that are electrically connected to the ground electrodes of the circuit board included in the communication device 300 and are given a ground potential.

[0044] The following is based on Figure 5 The circuit structure of the high-frequency module 100 will be described in more detail.

[0045] The plurality of transmit filters 131, 132, and 133 are transmit filters that have different frequency bands as their passbands. Hereinafter, when describing the three transmit filters 131, 132, and 133 separately, the three transmit filters 131, 132, and 133 may be referred to as the first transmit filter 131, the second transmit filter 132, and the third transmit filter 133, respectively.

[0046] The first transmit filter 131 is, for example, a filter that uses the transmission band of the first communication frequency band as a passband. The second transmit filter 132 is, for example, a filter that uses the transmission band of the second communication frequency band as a passband. The third transmit filter 133 is, for example, a filter that uses the transmission band of the third communication frequency band as a passband. The first communication frequency band corresponds to the transmission signal that passes through the first transmit filter 131. The second communication frequency band corresponds to the transmission signal that passes through the second transmit filter 132. The third communication frequency band corresponds to the transmission signal that passes through the third transmit filter 133. The first to third communication frequency bands are, for example, communication frequency bands of the 3GPP LTE standard or communication frequency bands of the 5G NR standard.

[0047] The power amplifier 111 has an input terminal and an output terminal. The power amplifier 111 amplifies the transmission signal input to the input terminal and outputs the amplified signal from the output terminal. The input terminal of the power amplifier 111 is connected to the signal input terminal 82. The input terminal of the power amplifier 111 is connected to the signal processing circuit 301 via the signal input terminal 82. The signal input terminal 82 is a terminal for inputting a high-frequency signal (transmission signal) from an external circuit (e.g., the signal processing circuit 301) into the high-frequency module 100. In the high-frequency module 100, the output terminal of the power amplifier 111 and the first to third transmission filters 131 to 133 can be connected via the output matching circuit 113 and the second switch 105. The second switch 105 has a common terminal 150 and a plurality of (e.g., three) selection terminals 151 to 153. In high-frequency module 100 , the output terminal of power amplifier 111 is connected to common terminal 150 of second switch 105 via output matching circuit 113 . Three selection terminals 151 , 152 , and 153 of second switch 105 are connected one-to-one to three transmission filters 131 , 132 , and 133 . Power amplifier 111 is controlled by controller 115 .

[0048] Power amplifier 111 is, for example, a multi-stage amplifier including a driver-stage amplifier and a final-stage amplifier. In power amplifier 111, the input terminal of the driver-stage amplifier is connected to signal input terminal 82, the output terminal of the driver-stage amplifier is connected to the input terminal of the final-stage amplifier, and the output terminal of the final-stage amplifier is connected to output matching circuit 113. Power amplifier 111 is not limited to a multi-stage amplifier and may be, for example, an in-phase combining amplifier, a differential combining amplifier, or a Doherty amplifier.

[0049] The controller 115 controls the power amplifier 111, for example, according to a control signal from the signal processing circuit 301. The controller 115 is connected to, for example, a driver-stage amplifier and an output-stage amplifier of the power amplifier 111. The controller 115 is connected to the signal processing circuit 301 via a plurality of (for example, four) control terminals 84. The control terminal 84 is a terminal for inputting a control signal from an external circuit (for example, the signal processing circuit 301) to the controller 115. The controller 115 controls the power amplifier 111 based on the control signal obtained from the control terminal 84. The control signal obtained by the controller 115 from the control terminal 84 is a digital signal. The number of control terminals 84 is, for example, four, but Figure 5 Based on the control signal from the signal processing circuit 301 , the controller 115 supplies, for example, a first bias current to the driver-stage amplifier and a second bias current to the output-stage amplifier.

[0050] The output matching circuit 113 is provided in the signal path between the output terminal of the power amplifier 111 and the common terminal 150 of the second switch 105. The output matching circuit 113 is a circuit for achieving impedance matching between the power amplifier 111 and the three transmission filters 131, 132, and 133. The output matching circuit 113 includes, for example, a first inductor L1 connected between the output terminal of the power amplifier 111 and the common terminal 150 of the second switch 105 (see FIG. 1 ). Figure 1 The output matching circuit 113 may include, for example, a plurality of inductors and a plurality of capacitors.

[0051] Furthermore, the plurality of receive filters 171, 172, and 173 are receive filters that have different frequency bands as their passbands. Hereinafter, when the three receive filters 171, 172, and 173 are described separately, the three receive filters 171, 172, and 173 may be referred to as the first receive filter 171, the second receive filter 172, and the third receive filter 173, respectively.

[0052] The first receive filter 171 is, for example, a filter that uses the receive band of the first communication frequency band as its passband. The second receive filter 172 is, for example, a filter that uses the receive band of the second communication frequency band as its passband. The third receive filter 173 is, for example, a filter that uses the receive band of the third communication frequency band as its passband. The first communication frequency band corresponds to the received signal that passes through the first receive filter 171. The second communication frequency band corresponds to the received signal that passes through the second receive filter 172. The third communication frequency band corresponds to the received signal that passes through the third receive filter 173. The first to third communication frequency bands are, for example, communication frequency bands of the 3GPP LTE standard or communication frequency bands of the 5G NR standard, respectively. Furthermore, in the high-frequency module 100, the first transmit filter 131 and the first receive filter 171 form a first duplexer. Furthermore, in the high-frequency module 100, the second transmit filter 132 and the second receive filter 172 form a second duplexer. Furthermore, in the high-frequency module 100 , the third transmission filter 133 and the reception filter 173 constitute a third duplexer.

[0053] The low-noise amplifier 121 has an input terminal and an output terminal. The low-noise amplifier 121 amplifies the received signal input to the input terminal and outputs the amplified signal from the output terminal. The input terminal of the low-noise amplifier 121 is connected to the common terminal 160 of the third switch 106 via the input matching circuit 123. The output terminal of the low-noise amplifier 121 is connected to the signal output terminal 83. The output terminal of the low-noise amplifier 121 is connected to the signal processing circuit 301 via the signal output terminal 83, for example. The signal output terminal 83 is used to output the high-frequency signal (received signal) from the low-noise amplifier 121 to an external circuit (e.g., the signal processing circuit 301). In the high-frequency module 100, the input terminal of the low-noise amplifier 121 and the first to third receive filters 171 to 173 can be connected via the input matching circuit 123 and the third switch 106. The third switch 106 has a common terminal 160 and a plurality (e.g., three) of select terminals 161 to 163. In high-frequency module 100 , the input terminal of low-noise amplifier 121 is connected to common terminal 160 of third switch 106 via input matching circuit 123 . Three selection terminals 161 , 162 , and 163 of third switch 106 are connected to three reception filters 171 , 172 , and 173 in a one-to-one manner.

[0054] The input matching circuit 123 is a circuit for achieving impedance matching between the low noise amplifier 121 and the three reception filters 171, 172, and 173. The input matching circuit 123 includes, for example, a second inductor L2 connected between the input terminal of the low noise amplifier 121 and the common terminal 160 of the third switch 106 (see Figure 1 The input matching circuit 123 may include, for example, multiple inductors and multiple capacitors. Furthermore, the high-frequency module 100 may include multiple (three) input matching circuits 123. In this case, one input matching circuit 123 may be provided between the low-noise amplifier 121 and each of the three receive filters 171, 172, and 173.

[0055] The first switch 104 has a common terminal 140 and a plurality (e.g., three) of selection terminals 141 to 143. In the first switch 104, the common terminal 140 is connected to the antenna terminal 81. The high-frequency module 100 is not limited to a case where the common terminal 140 and the antenna terminal 81 are connected without intervening other circuit elements; for example, they may be connected via a low-pass filter and a coupler. The selection terminal 141 is connected to the connection point between the output terminal of the first transmit filter 131 and the input terminal of the first receive filter 171. The selection terminal 142 is connected to the connection point between the output terminal of the second transmit filter 132 and the input terminal of the second receive filter 172. The selection terminal 143 is connected to the connection point between the output terminal of the third transmit filter 133 and the input terminal of the third receive filter 173. The first switch 104 is, for example, a switch capable of connecting at least one or more of the three selection terminals 141 to 143 to the common terminal 140. Here, the first switch 104 is, for example, a switch capable of both one-to-one and one-to-many connections.

[0056] The first switch 104 is controlled by, for example, the signal processing circuit 301. The first switch 104 switches the connection state between the common terminal 140 and the three selection terminals 141 to 143 according to a control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The first switch 104 is, for example, a switch IC (Integrated Circuit).

[0057] Second switch 105 includes a common terminal 150 and a plurality (e.g., three) of selection terminals 151, 152, and 153. In second switch 105, common terminal 150 is connected to the output terminal of power amplifier 111 via output matching circuit 113. Selection terminal 151 is connected to the input terminal of first transmit filter 131. Selection terminal 152 is connected to the input terminal of second transmit filter 132. Selection terminal 153 is connected to the input terminal of third transmit filter 133. Second switch 105 is, for example, a switch capable of connecting at least one of the three selection terminals 151 to 153 to common terminal 150. Here, second switch 105 is, for example, a switch capable of both one-to-one and one-to-many connections.

[0058] The second switch 105 is controlled by, for example, the signal processing circuit 301. The second switch 105 switches the connection state between the common terminal 150 and the three selection terminals 151 to 153 according to a control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The second switch 105 is, for example, a switch IC.

[0059] Third switch 106 includes a common terminal 160 and a plurality of (e.g., three) selection terminals 161, 162, and 163. In third switch 106, common terminal 160 is connected to the input terminal of low-noise amplifier 121 via input matching circuit 123. Selection terminal 161 is connected to the output terminal of first receive filter 171. Selection terminal 162 is connected to the output terminal of second receive filter 172. Selection terminal 163 is connected to the output terminal of third receive filter 173. Third switch 106 is, for example, a switch capable of connecting at least one of the three selection terminals 161 to 163 to common terminal 160. Here, third switch 106 is, for example, a switch capable of both one-to-one and one-to-many connections.

[0060] The third switch 106 is controlled by, for example, the signal processing circuit 301. The third switch 106 switches the connection state between the common terminal 160 and the three selection terminals 161 to 163 according to a control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The third switch 106 is, for example, a switch IC.

[0061] (1.2) Structure of high-frequency module

[0062] like Figure 1 As shown, the high frequency module 100 includes a mounting substrate 9 and three transmission filters 131, 132, and 133. In addition, the high frequency module 100 includes a power amplifier 111 and an output matching circuit 113 (see FIG. Figure 5 ) and controller 115 (refer to Figure 2 ). In addition, the high-frequency module 100 includes three reception filters 171, 172, and 173, a low-noise amplifier 121, and an input matching circuit 123 (see Figure 5 ), the first switch 104 (refer to Figure 5 ), the second switch 105 (refer to Figure 5 ) and the third switch 106 (refer to Figure 5 ). In addition, the high-frequency module 100 includes a plurality of external connection terminals 8 (see Figure 2 ).

[0063] like Figure 2As shown, the mounting substrate 9 has a first main surface 91 and a second main surface 92 that oppose each other in the thickness direction D1 of the mounting substrate 9. The mounting substrate 9 is, for example, a multilayer substrate including multiple dielectric layers and multiple conductive layers. The multiple dielectric layers and the multiple conductive layers are stacked in the thickness direction D1 of the mounting substrate 9. The multiple conductive layers are formed into a predetermined pattern determined for each layer. Each of the multiple conductive layers includes one or more conductor portions within a plane perpendicular to the thickness direction D1 of the mounting substrate 9. The material of each conductive layer is, for example, copper. The multiple conductor pattern layers include a ground layer. In the high-frequency module 100, the multiple ground terminals 85 are electrically connected to the ground layer via via conductors, etc., included in the mounting substrate 9. The mounting substrate 9 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. The mounting substrate 9 is not limited to an LTCC substrate and may also be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate.

[0064] In addition, the mounting substrate 9 is not limited to an LTCC substrate, and may be, for example, a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed into a prescribed pattern. In the case where there are multiple insulating layers, the multiple insulating layers are formed into a prescribed pattern determined for each layer. The conductive layer is formed into a prescribed pattern different from the prescribed pattern of the insulating layer. In the case where there are multiple conductive layers, the multiple conductive layers are formed into a prescribed pattern determined for each layer. The conductive layer may also include one or more rewiring portions. In the wiring structure, the first of the two surfaces facing each other in the thickness direction of the multilayer structure is the first main surface 91 of the mounting substrate 9, and the second surface is the second main surface 92 of the mounting substrate 9. The wiring structure may also be, for example, an interposer. The interposer may be an interposer using a silicon substrate, or a substrate composed of multiple layers.

[0065] The first principal surface 91 and the second principal surface 92 of the mounting substrate 9 are separated in the thickness direction D1 of the mounting substrate 9 and intersect with the thickness direction D1 of the mounting substrate 9. The first principal surface 91 of the mounting substrate 9 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 9, but may also include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. In addition, the second principal surface 92 of the mounting substrate 9 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 9, but may also include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. In addition, the first principal surface 91 and the second principal surface 92 of the mounting substrate 9 may also be formed with fine bumps, recesses, or projections. For example, when a recess is formed on the first principal surface 91 of the mounting substrate 9, the first principal surface 91 includes the inner surface of the recess.

[0066] In the high-frequency module 100 according to the first embodiment, the first group of circuit components is mounted on the first main surface 91 of the mounting substrate 9. Figure 1 As shown, the first group of circuit components includes three transmit filters 131, 132, and 133, a power amplifier 111, the first inductor L1 of the output matching circuit 113, three receive filters 171, 172, and 173, and the second inductor L2 of the input matching circuit 123. The phrase "circuit components are mounted on the first principal surface 91 of the mounting substrate 9" encompasses both the placement of the circuit components on the first principal surface 91 of the mounting substrate 9 (mechanically connected) and the electrical connection of the circuit components to (appropriate conductors of) the mounting substrate 9. In the high-frequency module 100, the second group of circuit components, among the multiple circuit components, is mounted on the second principal surface 92 of the mounting substrate 9. This second group of circuit components includes the controller 115, the low-noise amplifier 121, the first switch 104, the second switch 105, and the third switch 106. The phrase "circuit components are mounted on the second principal surface 92 of the mounting substrate 9" encompasses both the placement of the circuit components on the second principal surface 92 of the mounting substrate 9 (mechanically connected) and the electrical connection of the circuit components to (appropriate conductors of) the mounting substrate 9. In the high-frequency module 100 according to the first embodiment, as described above, the second inductor L2 , the transmission filter 131 , the power amplifier 111 , and the reception filter 171 constitute the first electronic component 1 , the second electronic component 4 , the third electronic component 7 , and the fourth electronic component 10 , respectively.

[0067] The three transmit filters 131, 132, and 133 are, for example, ladder filters each having multiple (for example, four) series-arm resonators and multiple (for example, three) parallel-arm resonators. The three transmit filters 131, 132, and 133 are, for example, elastic wave filters. The multiple series-arm resonators and the multiple parallel-arm resonators of the elastic wave filters are each composed of elastic wave resonators. The elastic wave filters are, for example, surface acoustic wave filters that utilize surface acoustic waves. In a surface acoustic wave filter, the multiple series-arm resonators and the multiple parallel-arm resonators are, for example, SAW (Surface Acoustic Wave) resonators.

[0068] like Figure 1 As shown, three transmission filters 131, 132, and 133 are mounted on the first main surface 91 of the mounting substrate 9. When viewed from the thickness direction D1 of the mounting substrate 9, the outer peripheral shape of each of the three transmission filters 131, 132, and 133 is a quadrilateral. Figure 4As shown, the transmission filter 131 constituting the second electronic component 4 includes, for example, a substrate 401 and a circuit portion 414. The substrate 401 has a first principal surface 411 and a second principal surface 412 that oppose each other in the thickness direction of the substrate 401. The circuit portion 414 includes a plurality of IDT (Interdigital Transducer) electrodes 415 formed on the first principal surface 411 of the substrate 401. Furthermore, the transmission filter 131 includes a spacer layer 417, a cover member 418, and a plurality of external electrodes 45 as components of the package structure. The transmission filter 131 has a rectangular shape when viewed from above in the thickness direction D1 of the mounting substrate 9, but is not limited to this and may also have a square shape. In the transmission filter 131, the substrate 401 is a piezoelectric substrate, such as a lithium tantalate substrate or a lithium niobate substrate.

[0069] The spacer layer 417 is provided on the first main surface 411 side of the substrate 401. When viewed from above in the thickness direction of the substrate 401, the spacer layer 417 surrounds the multiple IDT electrodes 415. When viewed from above in the thickness direction of the substrate 401, the spacer layer 417 has a rectangular frame shape. It is electrically insulating. The material of the spacer layer 417 is epoxy resin, polyimide, or the like. The cover member 418 is a flat plate. It is arranged on the spacer layer 417 so as to face the substrate 401 in the thickness direction of the substrate 401. The cover member 418 overlaps the multiple IDT electrodes 415 in the thickness direction of the substrate 401 and is separated from the multiple IDT electrodes 415 in the thickness direction of the substrate 401. The cover member 418 is electrically insulating. The material of the cover member 418 is epoxy resin, polyimide, or the like. The transmit filter 131 has a space S1 enclosed by the substrate 401, the spacer layer 417, and the cover member 418. There is a gas in the space S1 . The gas is air, an inert gas (for example, nitrogen), etc. The plurality of external electrodes 45 are exposed from the cover member 418 .

[0070] The structures of the second transmission filter 132 and the third transmission filter 133 are the same as the structure of the first transmission filter 131 .

[0071] The power amplifier 111 is an IC chip for power amplification. Figure 1As shown in FIG2 , power amplifier 111 is mounted on first principal surface 91 of mounting substrate 9. When viewed from above in thickness direction D1 of mounting substrate 9, power amplifier 111 has a rectangular outer periphery. Power amplifier 111 is an IC chip comprising a substrate having a first principal surface and a second principal surface facing each other, and a circuit portion formed on the first principal surface side of the substrate. The substrate is, for example, a gallium arsenide substrate. The circuit portion includes a driver-stage amplifier connected to the input terminals of power amplifier 111 and a final-stage amplifier connected to the output terminals of the driver-stage amplifier. The driver-stage amplifier and the final-stage amplifier each include an amplification transistor. The amplification transistor is, for example, an HBT (Heterojunction Bipolar Transistor). Power amplifier 111 may also include a capacitor for DC blocking. Power amplifier 111 is flip-chip mounted on first principal surface 91 of mounting substrate 9, with the first principal surface of the substrate facing the first principal surface 91 of mounting substrate 9. Therefore, in the third electronic component 7 formed by the power amplifier 111, the second main surface of the substrate (gallium arsenide substrate) of the power amplifier 111 constitutes the main surface 71 of the third electronic component 7 on the side opposite to the mounting substrate 9. When viewed from above in the thickness direction D1 of the mounting substrate 9, the outer peripheral shape of the IC chip including the power amplifier 111 is a quadrilateral. The substrate in the power amplifier 111 is not limited to a gallium arsenide substrate, and may be, for example, a silicon substrate, a silicon germanium substrate, or a gallium nitride substrate. In addition, the amplification transistor is not limited to an HBT, and may be, for example, a bipolar transistor or a FET (Field Effect Transistor). An example of a FET is a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor).

[0072] The first inductor L1 included in the output matching circuit 113 is mounted on the first main surface 91 of the mounting substrate 9. When viewed from above in the thickness direction D1 of the mounting substrate 9, the outer periphery of the first inductor L1 is a quadrilateral. The first inductor L1 is a chip inductor. The output matching circuit 113 is not limited to including only the first inductor L1; it may also include an inductor and a capacitor. Furthermore, if the power amplifier 111 is a differential combining amplifier, the output matching circuit 113 may also include a transformer.

[0073] like Figure 2As shown, controller 115 is mounted on second principal surface 92 of mounting substrate 9. When viewed from above in thickness direction D1 of mounting substrate 9, controller 115 has a rectangular outer periphery. Controller 115 is, for example, an IC chip comprising a substrate having a first principal surface and a second principal surface facing each other, and a circuit portion formed on the first principal surface of the substrate. The substrate is, for example, a silicon substrate. The circuit portion includes a control circuit that controls power amplifier 111 based on a control signal from signal processing circuit 301.

[0074] The three receive filters 171, 172, and 173 are, for example, ladder filters each having multiple (for example, four) series-arm resonators and multiple (for example, three) parallel-arm resonators. The three receive filters 171, 172, and 173 are, for example, elastic wave filters. The multiple series-arm resonators and the multiple parallel-arm resonators of the elastic wave filters are each composed of elastic wave resonators. The elastic wave filters are, for example, surface acoustic wave filters that utilize surface acoustic waves. In a surface acoustic wave filter, the multiple series-arm resonators and the multiple parallel-arm resonators are, for example, SAW resonators.

[0075] like Figure 1 As shown, three reception filters 171, 172, and 173 are mounted on the first main surface 91 of the mounting substrate 9. When viewed from the thickness direction D1 of the mounting substrate 9, the outer peripheral shape of each of the three reception filters 171, 172, and 173 is a quadrilateral. Figure 4 As shown, the reception filter 171 constituting the fourth electronic component 10 includes, for example, a substrate 1001 and a circuit portion 1014. The substrate 1001 has a first principal surface 1011 and a second principal surface 1012 that oppose each other in the thickness direction of the substrate 1001. The circuit portion 1014 includes a plurality of IDT electrodes 1015 formed on the first principal surface 1011 of the substrate 1001. Furthermore, the reception filter 171 includes a spacer layer 1017, a cover member 1018, and a plurality of external electrodes 1045 as components of the package structure. The reception filter 171 has a rectangular shape when viewed from above in the thickness direction D1 of the mounting substrate 9, but is not limited to this and may also have a square shape. In the reception filter 171, the substrate 1001 is a piezoelectric substrate, such as a lithium tantalate substrate or a lithium niobate substrate.

[0076] The spacer layer 1017 is provided on the first main surface 1011 side of the substrate 1001. When viewed from above in the thickness direction of the substrate 1001, the spacer layer 1017 surrounds the multiple IDT electrodes 1015. When viewed from above in the thickness direction of the substrate 1001, the spacer layer 1017 has a rectangular frame shape. The spacer layer 1017 has electrical insulating properties. The material of the spacer layer 1017 is epoxy resin, polyimide, or the like. The cover member 1018 is in the form of a flat plate. The cover member 1018 is arranged on the spacer layer 1017 so as to oppose the substrate 1001 in the thickness direction of the substrate 1001. The cover member 1018 overlaps with the multiple IDT electrodes 1015 in the thickness direction of the substrate 1001 and is separated from the multiple IDT electrodes 1015 in the thickness direction of the substrate 1001. The cover member 1018 has electrical insulating properties. The material of the cover member 1018 is epoxy resin, polyimide, or the like. The reception filter 171 has a space S2 surrounded by the substrate 1001 , the spacer layer 1017 , and the cover member 1018 . A gas enters the space S2 . The gas is air, an inert gas (eg, nitrogen), etc. A plurality of external electrodes 1045 are exposed from the cover member 1018 .

[0077] The structures of the second reception filter 172 and the third reception filter 173 are the same as that of the first reception filter 171 .

[0078] like Figure 2 As shown, the low-noise amplifier 121 is mounted on the second main surface 92 of the mounting substrate 9. When viewed from above in the thickness direction D1 of the mounting substrate 9, the outer peripheral shape of the low-noise amplifier 121 is a quadrilateral. The low-noise amplifier 121 is, for example, an IC chip including a substrate having a first main surface and a second main surface facing each other, and a circuit portion formed on the first main surface side of the substrate. The substrate is, for example, a silicon substrate. The circuit portion includes a FET as an amplification transistor that amplifies the received signal input to the input terminal of the low-noise amplifier 121. The amplification transistor is not limited to a FET and can also be, for example, a bipolar transistor. The low-noise amplifier 121 is flip-chip mounted on the second main surface 92 of the mounting substrate 9 so that the first main surface of the substrate, of the first and second main surfaces, is on the second main surface 92 side of the mounting substrate 9.

[0079] like Figure 1 As shown in FIG. 2, the input matching circuit 123 (refer to Figure 5 ) is mounted on the first main surface 91 of the mounting substrate 9. When viewed from above in the thickness direction D1 of the mounting substrate 9, the outer periphery of the second inductor L2 is a quadrilateral. The second inductor L2 is a chip inductor. The input matching circuit 123 is not limited to including only the second inductor L2; it may also include an inductor and a capacitor.

[0080] Figure 5The first switch 104, second switch 105, and third switch 106 shown are mounted on the second principal surface 92 of the mounting substrate 9. When viewed from above in the thickness direction D1 of the mounting substrate 9, the outer periphery of each of the first switch 104, second switch 105, and third switch 106 is a quadrilateral. Each of the first switch 104, second switch 105, and third switch 106 is, for example, an IC chip including a substrate having a first principal surface and a second principal surface facing each other, and a circuit portion formed on the first principal surface of the substrate. The substrate is, for example, a silicon substrate. The circuit portion includes a plurality of FETs as switching elements. The switching elements are not limited to FETs; for example, bipolar transistors may also be employed. The first switch 104, second switch 105, and third switch 106 are flip-chip mounted on the second principal surface 92 of the mounting substrate 9, with the first principal surface of the substrate facing the second principal surface 92 of the mounting substrate 9. In the high-frequency module 100 , two or three of the first switch 104 , the second switch 105 , and the third switch 106 may be included in one IC chip.

[0081] like Figure 2 As shown, the plurality of external connection terminals 8 are arranged on the second main surface 92 of the mounting substrate 9. The so-called "external connection terminals 8 are arranged on the second main surface 92 of the mounting substrate 9" includes the case where the external connection terminals 8 are mechanically connected to the second main surface 92 of the mounting substrate 9, and the case where the external connection terminals 8 are electrically connected to (the appropriate conductor portion of) the mounting substrate 9. The material of the plurality of external connection terminals 8 is, for example, metal (for example, copper, copper alloy, etc.). The plurality of external connection terminals 8 are columnar electrodes. The columnar electrodes are, for example, cylindrical electrodes. The plurality of external connection terminals 8 are joined to the conductor portion of the mounting substrate 9, for example, by soldering, but are not limited thereto. For example, they can also be joined using a conductive adhesive (for example, a conductive paste), or they can be joined directly.

[0082] like Figure 2 As shown in FIG5 , the plurality of external connection terminals 8 include an antenna terminal 81, a signal input terminal 82, a signal output terminal 83, a plurality of ( Figure 5 (Only one is shown in the figure) a control terminal 84 and a plurality of ground terminals 85. The plurality of ground terminals 85 are electrically connected to the ground layer of the mounting substrate 9. The ground layer serves as the circuit ground for the high-frequency module 100, and the plurality of circuit components of the high-frequency module 100 include circuit components electrically connected to the ground layer.

[0083] like Figure 2As shown, the resin layer 5 (hereinafter also referred to as the first resin layer 5) is arranged on the first main surface 91 of the mounting substrate 9. The first resin layer 5 covers the outer peripheral surface of each of the first group of circuit components mounted on the first main surface 91 of the mounting substrate 9 among the plurality of circuit components. Here, the first resin layer 5 covers the outer peripheral surface 13 of the first electronic component 1 (second inductor L2), the outer peripheral surface 43 of the second electronic component 4 (transmit filter 131), the outer peripheral surface 73 of the third electronic component 7 (power amplifier 111), and the outer peripheral surface 103 of the fourth electronic component 10 (receive filter 171). The first resin layer 5 includes a resin (e.g., an epoxy resin). In addition to the resin, the first resin layer 5 may also include a filler.

[0084] High-frequency module 100 further includes a second resin layer 19 disposed on second principal surface 92 of mounting substrate 9. Second resin layer 19 covers the second set of circuit components mounted on second principal surface 92 of mounting substrate 9 and the outer peripheral surfaces of each of the plurality of external connection terminals 8. Second resin layer 19 comprises a resin (e.g., epoxy resin). In addition to the resin, second resin layer 19 may also include a filler. The material of second resin layer 19 may be the same as or different from that of first resin layer 5.

[0085] The conductive layer 6 covers the first resin layer 5. The conductive layer 6 has conductivity. In the high-frequency module 100, the conductive layer 6 is provided for the purpose of electromagnetic shielding inside and outside the high-frequency module 100. The conductive layer 6 has a multilayer structure in which a plurality of metal layers are stacked, but is not limited thereto and may be a single metal layer. The metal layer includes one or more metals. The conductive layer 6 covers the main surface 51 of the first resin layer 5 opposite to the mounting substrate 9 side, the outer peripheral surface 53 of the first resin layer 5, and the outer peripheral surface 93 of the mounting substrate 9. In addition, the conductive layer 6 also covers the outer peripheral surface 193 of the second resin layer 19. The conductive layer 6 is in contact with at least a portion of the outer peripheral surface of the ground layer of the mounting substrate 9. Accordingly, the potential of the conductive layer 6 can be made the same as the potential of the ground layer.

[0086] Conductive layer 6 covers principal surface 11 on the mounting substrate 9 side of first electronic component 1, principal surface 41 on the mounting substrate 9 side of second electronic component 4, and principal surface 101 on the mounting substrate 9 side of fourth electronic component 10. Conductive layer 6 is in contact with principal surface 11 on the mounting substrate 9 side of first electronic component 1, principal surface 41 on the mounting substrate 9 side of second electronic component 4, and principal surface 101 on the mounting substrate 9 side of fourth electronic component 10.

[0087] (1.3) Detailed structure of the high-frequency module

[0088] like Figure 3As shown, the first electronic component 1 includes an electronic component body 2 and a plurality of (for example, two) external electrodes 3. The electronic component body 2 has a thickness direction D1 (see FIG. 1 ) of the mounting substrate 9. Figure 2 ) on the third main surface 23 and the fourth main surface 24, and the outer peripheral surface 25 facing each other. The electronic component body 2 has electrical insulation on the third main surface 23, the fourth main surface 24 and the outer peripheral surface 25. In the first electronic component 1, the third main surface 23 of the electronic component body 2 constitutes the main surface 11 of the first electronic component 1 and is in contact with the conductive layer 6. The plurality of external electrodes 3 are respectively arranged on the fourth main surface 24 of the electronic component body 2 and do not reach the third main surface 23. The so-called plurality of external electrodes 3 do not reach the third main surface 23 respectively means that the plurality of external electrodes 3 are not respectively arranged on the third main surface 23 of the electronic component body 2. Accordingly, in the first electronic component 1, the plurality of external electrodes 3 are not in contact with the conductive layer 6. The plurality of external electrodes 3 are respectively arranged to span the fourth main surface 24 of the electronic component body 2 and the outer peripheral surface 25 of the electronic component body 2. In other words, each of the plurality of external electrodes 3 includes a first portion provided on the fourth principal surface 24 of the electronic component body 2 and a second portion provided on the outer peripheral surface 25 of the electronic component body 2 and connected to the first portion. Each of the plurality of external electrodes 3 also does not reach the ridgeline between the third principal surface 23 and the outer peripheral surface 25 of the electronic component body 2. The first electronic component 1 is an SMD, and the plurality of external electrodes 3 are surface-mounted on the mounting substrate 9 by being bonded to the mounting substrate 9 via bonding portions 39 that correspond one-to-one with the plurality of external electrodes 3. The material of the bonding portions 39 is, for example, solder.

[0089] The material of the electronic component body 2 includes ceramic. The third main surface 23 of the electronic component body 2 is a portion of the portion formed of ceramic in the electronic component body 2. The inductor (second inductor L2) constituting the first electronic component 1 is a laminated ceramic inductor. The electronic component body 2 has a multilayer ceramic structure 20. The second inductor L2 has a winding portion 26 connected between two external electrodes 3. The winding portion 26 is provided inside the multilayer ceramic structure 20. The winding portion 26 includes a plurality of conductor layers 27 and a via conductor that connects two adjacent conductor layers 27 in the thickness direction D1 of the mounting substrate 9. The plurality of conductor layers 27 are, for example, C-shaped when viewed in the thickness direction D1 of the mounting substrate 9. In the first electronic component 1, the multilayer ceramic structure 20 constitutes the electrical insulator portion 21 in the electronic component body 2, and the circuit element 15 included in the first electronic component 1 is constituted by the winding portion 26 and the two external electrodes 3. The winding portion 26 constitutes the conductor portion 14 provided within the electrical insulator portion 21 in the electronic component body 2 and constituting a portion of the circuit element 15. The winding axis of the second inductor L2 is the winding axis of the winding portion 26. The winding axis of the second inductor L2 is along the thickness direction D1 of the mounting substrate 9 (refer to FIG. 1 ). Figure 2). The winding axis of the second inductor L2 is parallel to the thickness direction D1 of the mounting substrate 9, but is not limited to being strictly parallel, as long as it is approximately parallel. The so-called approximately parallel means that the angle formed by the winding axis and the thickness direction D1 is less than 10 degrees. The winding axis of the second inductor L2 is not limited to the direction along the thickness direction D1 of the mounting substrate 9, but may be a direction along a direction orthogonal to the thickness direction D1. In the electronic component 1 in the high-frequency module 100 involved in embodiment 1, the "electronic component body 2" is the part other than the multiple external electrodes 3 of the electronic component 1, and is a structure including an electrical insulator portion 21 and a winding portion 26. The electrical insulator portion 21 has a third main surface 23 constituting the main surface 11 of the electronic component 1 and an outer peripheral surface 25 constituting a part of the outer peripheral surface 13 of the electronic component 1. The winding portion 26 is arranged in the electrical insulator portion 21. The size of the electronic component body 2 is approximately the same as that of the electronic component 1. The shape of the electrical insulator portion 21 is, for example, a rectangular parallelepiped. The electrical insulator portion 21 is composed of a plurality of laminated dielectric layers (ceramic layers).

[0090] For the sake of convenience, the following Figure 2 As shown, a plane perpendicular to the thickness direction D1 of the mounting substrate 9 and including at least a portion of the first principal surface 91 of the mounting substrate 9 is defined as a reference plane RP1. In the high-frequency module 100, the first electronic component 1 is mounted on the first principal surface 91 of the mounting substrate 9 such that the thickness direction of the first electronic component 1 coincides with the thickness direction D1 of the mounting substrate 9. The second electronic component 4 is mounted on the first principal surface 91 of the mounting substrate 9 such that the thickness direction of the second electronic component 4 coincides with the thickness direction D1 of the mounting substrate 9. The principal surface 11 of the first electronic component 1 and the principal surface 41 of the second electronic component 4 are each substantially parallel to the reference plane RP1. In the high-frequency module 100, a first distance H1 between the reference plane RP1 and the principal surface 11 of the first electronic component 1 in the thickness direction D1 of the mounting substrate 9 is equal to a second distance H2 between the reference plane RP1 and the principal surface 41 of the second electronic component 4 in the thickness direction D1 of the mounting substrate 9. The first distance H1 is the same as the second distance H2, and is not limited to being strictly the same. It is sufficient as long as the second distance H2 is within the range of 15% of the first distance H1, more preferably within the range of 10% of the first distance H1, and further preferably within the range of 5% of the first distance H1.

[0091] In high-frequency module 100, principal surface 11 of first electronic component 1 and principal surface 41 of second electronic component 4 are both roughened surfaces. In other words, in high-frequency module 100, fine irregularities are formed on principal surface 11 of first electronic component 1 and principal surface 41 of second electronic component 4. Principal surface 11 of first electronic component 1 may be rougher than outer peripheral surface 13 of first electronic component 1. Principal surface 41 of second electronic component 4 may be rougher than outer peripheral surface 43 of second electronic component 4.

[0092] In high-frequency module 100, first electronic component 1, second electronic component 4, and third electronic component 7 are mounted on first principal surface 91 of mounting substrate 9. Third electronic component 7 is shorter than first and second electronic components 1 and 4. In other words, a third distance H3 between reference plane RP1 and principal surface 71 of third electronic component 7 in thickness direction D1 of mounting substrate 9 is shorter than both first distance H1 and second distance H2. Resin layer 5 covers principal surface 71 of third electronic component 7. In high-frequency module 100, the maximum height roughness (Rz) of principal surface 11 of first electronic component 1 and principal surface 41 of second electronic component 4 is greater than the maximum height roughness of principal surface 71 of third electronic component 7. The maximum height roughness of principal surface 11 of first electronic component 1, principal surface 41 of second electronic component 4, and principal surface 71 of third electronic component 7 is measured using a STEM (Scanning Transmission Electron Microscope) image of a cross-section of high-frequency module 100. The maximum height roughness of each of the main surface 11 of the electronic component 1, the main surface 41 of the second electronic component 4, and the main surface 71 of the third electronic component 7 is the sum of the maximum peak height and the maximum valley depth in the STEM image. In other words, the maximum height roughness of each of the main surface 11 of the electronic component 1, the main surface 41 of the second electronic component 4, and the main surface 71 of the third electronic component 7 is the peak-to-valley value of the concave and convex surfaces. The surface roughness of each of the main surface 11 of the electronic component 1 and the main surface 41 of the second electronic component 4 can be changed, for example, according to the conditions of the treatment for roughening the first electronic component 1 and the second electronic component 4 by grinding or the like during the manufacture of the high-frequency module 100. When discussing the relative size relationship of the maximum height roughness, the maximum height roughness is not limited to the value obtained from the STEM image, and can also be a value obtained from an SEM (Scanning Electron Microscope) image, for example.

[0093] Furthermore, in high-frequency module 100, a fourth distance H4 between reference plane RP1 in thickness direction D1 of mounting substrate 9 and principal surface 101 of fourth electronic component 10 is identical to first distance H1. While fourth distance H4 and first distance H1 need not be strictly identical, fourth distance H4 may be within a range of ±15% of first distance H1, more preferably within a range of ±10%, and even more preferably within a range of ±5%.

[0094] Furthermore, in high-frequency module 100, a fifth distance H5 between reference plane RP1 in thickness direction D1 of mounting substrate 9 and principal surface 51 of resin layer 5 is identical to first distance H1. The fifth distance H5 and first distance H1 are not necessarily identical; however, the fifth distance H5 may be within a range of ±15% of first distance H1, more preferably within a range of ±10%, and even more preferably within a range of ±5%.

[0095] In high-frequency module 100 , principal surface 11 of first electronic component 1 , principal surface 41 of second electronic component 4 , principal surface 101 of fourth electronic component 10 , and principal surface 51 of resin layer 5 are substantially flush.

[0096] In high-frequency module 100, the portions of first electronic component 1 and second electronic component 4 that contact conductive layer 6 are made of different materials. The portion of first electronic component 1 that contacts conductive layer 6 is made of ceramic, while the portion of second electronic component 4 that contacts conductive layer 6 is made of lithium tantalate or lithium niobate. In high-frequency module 100 according to Embodiment 1, the portion of fourth electronic component 10 that contacts conductive layer 6 is made of the same material as the portion of second electronic component 4 that contacts conductive layer 6, but these materials may be different.

[0097] In the high-frequency module 100 according to the first embodiment, from the viewpoint of improving heat dissipation, the conductive layer 6 preferably contacts the entire main surface of each of the plurality of transmission filters 131 , 132 , and 133 opposite to the mounting substrate 9 .

[0098] (1.4) Layout of circuit components in high-frequency modules

[0099] In the high-frequency module 100, the mounting substrate 9 is provided in the thickness direction D1 (see Figure 2 ) When looking down, Figure 1 As shown, in conjunction with the power amplifier 111 and the output matching circuit 113 (refer to Figure 5 ) in a direction parallel to the direction in which the first inductor L1 is arranged, the first transmit filter 131, the second transmit filter 132 and the third transmit filter 133 are arranged in the order of the first transmit filter 131, the second transmit filter 132 and the third transmit filter 133 in a direction from the power amplifier 111 toward the first inductor L1.

[0100] Furthermore, in the high frequency module 100, when viewed from the thickness direction D1 of the mounting substrate 9, as shown in FIG. Figure 1As shown, in a direction parallel to the direction in which the first transmit filter 131, the second transmit filter 132, and the third transmit filter 133 are arranged, the first receive filter 171, the second receive filter 172, and the third receive filter 173 are arranged in the order of the first receive filter 171, the second receive filter 172, and the third receive filter 173 in the direction from the first transmit filter 131 toward the third transmit filter 133.

[0101] When viewed from the thickness direction D1 of the mounting substrate 9, the input matching circuit 123 (see Figure 5 ) is adjacent to the reception filter 171 (see Figure 1 The phrase “the second inductor L42 is adjacent to the reception filter 171 ” means that, when viewed from above in the thickness direction D1 of the mounting substrate 9 , no other circuit components are mounted on the first main surface 91 of the mounting substrate 9 between the second inductor L2 and the reception filter 171 , and the second inductor L2 is adjacent to the reception filter 171 .

[0102] In the high-frequency module 100, the reception filter 171 overlaps the low-noise amplifier 121 when viewed from the thickness direction D1 of the mounting substrate 9 (see Figure 2 ). When viewed from above in the thickness direction D1 of the mounting substrate 9, a portion of the reception filter 171 overlaps a portion of the low-noise amplifier 121. However, the present invention is not limited thereto, and the entire reception filter 171 may overlap the entire low-noise amplifier 121. Furthermore, the entire reception filter 171 may overlap a portion of the low-noise amplifier 121, or the entire low-noise amplifier 121 may overlap a portion of the reception filter 171.

[0103] In the high-frequency module 100, the power amplifier 111 does not overlap with the low-noise amplifier 121 when viewed from the thickness direction D1 of the mounting substrate 9 (see FIG. Figure 2 ).

[0104] (1.5) Manufacturing method of high-frequency module

[0105] As a manufacturing method for the high-frequency module 100, for example, a manufacturing method including a first step, a second step, a third step, a fourth step, and a fifth step can be employed. The first step is a step of mounting a plurality of circuit components on a mounting substrate 9 and arranging a plurality of external connection terminals 8. The second step is a step of forming a first resin material layer on the first principal surface 91 side of the mounting substrate 9, which covers the first group of circuit components and serves as a base for the first resin layer 5, and forming a second resin material layer on the second principal surface 92 side of the mounting substrate 9, which serves as a base for the second resin layer 19. The third step is a step of grinding the first resin material layer from the principal surface opposite to the mounting substrate 9 side of the first resin material layer, and further grinding the first resin material layer and the first electronic component 1, the second electronic component 4, and the fourth electronic component 10 to form the first resin layer 5 and thinning the first electronic component 1, the second electronic component 4, and the fourth electronic component 10, respectively. In the third step, the first electronic component 1, the second electronic component 4, and the fourth electronic component 10 are ground to roughen the principal surface 11 of the first electronic component 1, the principal surface 41 of the second electronic component 4, and the principal surface 101 of the fourth electronic component 10. The fourth step involves grinding the second resin material layer from the principal surface opposite to the mounting substrate 9 side of the second resin material layer to expose the tips of the plurality of external connection terminals 8. Thereafter, the second resin material layer and the external connection terminals 8 are ground to form a second resin layer 19. The fifth step involves forming a conductive layer 6 by, for example, sputtering, vapor deposition, or printing. The conductive layer 6 is in contact with the principal surface 51 of the first resin layer 5 and the principal surfaces 11, 41, and 101 of the first electronic component 1, the second electronic component 4, and the fourth electronic component 10, respectively, opposite to the mounting substrate 9 side.

[0106] In the high-frequency module 100 manufactured using the manufacturing method including the third step described above, the principal surface 51 of the first resin layer 5 and the principal surfaces 11, 41, and 101 of the first electronic component 1, the second electronic component 4, and the fourth electronic component 10, respectively, on the side opposite to the mounting substrate 9, are roughened and may have grinding marks. In the manufacturing method of the high-frequency module 100, the thickness of the multilayer ceramic structure 20 in the electronic component body 2 before grinding is increased so that the portion of the first electronic component 1 that constitutes the circuit element 15 is not ground during the third step. The thickness direction of the multilayer ceramic structure 20 is along the thickness direction D1 of the mounting substrate 9. In the first electronic component 1 before grinding, the portion that constitutes the circuit element 15 (the winding portion 26 and the plurality of external electrodes 3) is located on the mounting substrate 9 side in the thickness direction of the multilayer ceramic structure 20. In other words, the shortest distance between the surface of the multilayer ceramic structure 20 on the side opposite to the mounting substrate 9 side and the winding portion 26 in the thickness direction of the multilayer ceramic structure 20 is longer than the shortest distance between the surface of the multilayer ceramic structure 20 on the mounting substrate 9 side and the winding portion 26 in the thickness direction of the multilayer ceramic structure 20. Furthermore, the shortest distance between the surface of the multilayer ceramic structure 20 on the side opposite to the mounting substrate 9 side and the plurality of external electrodes 3 in the thickness direction of the multilayer ceramic structure 20 is longer than the shortest distance between the surface of the multilayer ceramic structure 20 on the mounting substrate 9 side and the plurality of external electrodes 3 in the thickness direction of the multilayer ceramic structure 20.

[0107] (2) Effect

[0108] (2.1) High-frequency module

[0109] The high-frequency module 100 according to the first embodiment includes a mounting substrate 9, an electronic component 1, a resin layer 5, and a conductive layer 6. The mounting substrate 9 has a first principal surface 91 and a second principal surface 92 that face each other. The electronic component 1 is mounted on the first principal surface 91 of the mounting substrate 9. The resin layer 5 is disposed on the first principal surface 91 of the mounting substrate 9 and covers the outer peripheral surface 13 of the electronic component 1. The conductive layer 6 covers the principal surface 51 of the resin layer 5 that faces away from the mounting substrate 9 and the principal surface 11 of the electronic component 1 that faces away from the mounting substrate 9. The electronic component 1 has an electronic component body 2 and a plurality of external electrodes 3. The electronic component body 2 includes an electrical insulator portion 21 and a conductor portion 14 disposed within the electrical insulator portion 21 and constituting at least a portion of a circuit element 15 of the electronic component 1. The electronic component body 2 has a third principal surface 23 and a fourth principal surface 24 that face each other, and an outer peripheral surface 25. The plurality of external electrodes 3 are provided on the electronic component body 2. In electronic component 1 , third principal surface 23 of electronic component body 2 constitutes principal surface 11 of electronic component 1 and contacts conductive layer 6 . External electrodes 3 are provided on fourth principal surface 24 of electronic component body 2 and do not reach third principal surface 23 .

[0110] The high-frequency module 100 according to Embodiment 1 can increase the component value of the circuit element 15 included in the electronic component 1. When the multiple external electrodes of the electronic component reach the third main surface of the electronic component body, the multiple external electrodes contact the conductive layer, and the multiple external electrodes in contact with the conductive layer are short-circuited via the conductive layer. Furthermore, when using the above-described high-frequency module manufacturing method, grinding in the third step requires grinding a portion of each of the multiple external electrodes, making grinding difficult. In the high-frequency module 100 according to Embodiment 1, even when the main surface 11 of the electronic component 1 opposite the mounting substrate 9 side contacts the conductive layer 6, the multiple external electrodes 3 do not contact the conductive layer 6. This allows the high-frequency module 100 to be thinner in the thickness direction D1 of the mounting substrate 9, and the component value of the circuit element 15 included in the electronic component 1 to be increased. In the high-frequency module 100 according to Embodiment 1, the component value of the circuit element 15 included in the electronic component 1 is an inductor. In high-frequency module 100 according to Embodiment 1, third principal surface 23 of electronic component body 2 constitutes principal surface 11 of electronic component 1 and is in contact with conductive layer 6. Therefore, the thickness of electrical insulator portion 21 can be increased compared to a case where electronic component 1 is not in contact with conductive layer 6. Consequently, high-frequency module 100 according to Embodiment 1 can increase the number of turns of conductor portion 14, or winding portion 26, which constitutes part of circuit element 15 (increasing the number of conductor layers 27 and via conductors included in winding portion 26), thereby increasing the inductance of circuit element 15.

[0111] (2.2) Communication device

[0112] The communication device 300 according to the first embodiment includes a signal processing circuit 301 and a high-frequency module 100 . The signal processing circuit 301 is connected to the high-frequency module 100 .

[0113] Since the communication device 300 according to the first embodiment includes the high-frequency module 100 , the element value of the circuit element 15 included in the electronic component 1 can be increased.

[0114] The plurality of electronic components constituting the signal processing circuit 301 may be mounted on, for example, the aforementioned circuit substrate or on a circuit substrate (second circuit substrate) different from the circuit substrate (first circuit substrate) on which the high-frequency module 100 is mounted.

[0115] (3) Modification of high-frequency module

[0116] (3.1) Modification 1

[0117] Reference Figure 6A high-frequency module 100a according to Modification 1 of Embodiment 1 will be described. Components of the high-frequency module 100a according to Modification 1 that are identical to those of the high-frequency module 100 according to Embodiment 1 are denoted by the same reference numerals, and description thereof will be omitted.

[0118] The high-frequency module 100a according to the first modification is different from the high-frequency module 100 according to the first embodiment in that the plurality of external connection terminals 8 are ball bumps. In addition, the high-frequency module 100a according to the first modification does not include the second resin layer 19 (see FIG. 1 ) of the high-frequency module 100 according to the first embodiment. Figure 2 ) This aspect differs from the high-frequency module 100 according to the first embodiment. The high-frequency module 100a according to the first modification may also include an underfill portion provided in the gap between the second group of circuit components (e.g., the controller 115 and the low-noise amplifier 121) mounted on the second principal surface 92 of the mounting substrate 9 and the second principal surface 92 of the mounting substrate 9.

[0119] The material of the ball bump constituting each of the plurality of external connection terminals 8 is, for example, gold, copper, solder, or the like.

[0120] The plurality of external connection terminals 8 may include a mixture of external connection terminals 8 formed of ball bumps and external connection terminals 8 formed of columnar electrodes.

[0121] (3.2) Modification 2

[0122] Reference Figure 7 A high-frequency module 100b according to a second modification of Embodiment 1 will be described. Regarding the high-frequency module 100b according to the second modification, the same components as those of the high-frequency module 100 according to Embodiment 1 are denoted by the same reference numerals, and description thereof will be omitted.

[0123] The high-frequency module 100 b according to the second modification is different from the high-frequency module 100 according to the first embodiment in that the controller 115 is mounted on the first main surface 91 of the mounting substrate 9 .

[0124] In high-frequency module 100b according to Modification 2, controller 115 constitutes fourth electronic component 10. Resin layer 5 covers outer peripheral surface 103 of fourth electronic component 10. Conductive layer 6 covers principal surface 101 of fourth electronic component 10, which is opposite to mounting substrate 9. In fourth electronic component 10, principal surface 101 and conductive layer 6 are in contact.

[0125] Controller 115 is an IC chip that includes a substrate 1150 and a circuit unit 1154. Substrate 1150 has a first main surface 1151 and a second main surface 1152 that face each other. Circuit unit 1154 is formed on the first main surface 1151 side of substrate 1150. Substrate 1150 is, for example, a silicon substrate. Circuit unit 1154 includes a control circuit that controls power amplifier 111 in accordance with a control signal from signal processing circuit 301.

[0126] In the high-frequency module 100b according to the second modification, the first electronic component 1 (see Figure 2 )、Second electronic component 4 (refer to Figure 2 ) and the fourth electronic component 10 are made of different materials in the portion contacting the conductive layer 6. The portion contacting the conductive layer 6 of the first electronic component 1 is made of ceramic. The portion contacting the conductive layer 6 of the second electronic component 4 is made of a piezoelectric material (lithium tantalate or lithium niobate). The portion contacting the conductive layer 6 of the fourth electronic component 10 is made of silicon.

[0127] (3.3) Modification 3

[0128] Reference Figures 8-11 A high-frequency module 100c according to a third modification of Embodiment 1 will be described. Regarding the high-frequency module 100c according to the third modification, the same components as those of the high-frequency module 100 according to Embodiment 1 are denoted by the same reference numerals, and description thereof will be omitted.

[0129] like Figure 8 As shown, the high-frequency module 100 c according to the third modification differs from the high-frequency module 100 according to the first embodiment in that it includes a matching circuit 114 connected between the connection point between the output terminal of the transmission filter 131 and the input terminal of the reception filter 171 and the first switch 104 .

[0130] Matching circuit 114 is a circuit for achieving impedance matching between transmit filter 131 and receive filter 171, and first switch 104. Matching circuit 114 includes a capacitor C3 provided on signal path r1 between connection point T1 (the connection point between the output terminal of transmit filter 131 and the input terminal of receive filter 171) and first switch 104, and a third inductor L3 connected between signal path r1 and ground.

[0131] In the high-frequency module 100c according to the third modification, Figure 9As shown in Figures 10 and 10, the first inductor L1 of the output matching circuit 113 is mounted on the second principal surface 92 of the mounting substrate 9. Furthermore, in the high-frequency module 100c, the second inductor L2 of the input matching circuit 123 is mounted on the first principal surface 91 of the mounting substrate 9. Furthermore, in the high-frequency module 100c, the capacitor C3 of the matching circuit 114 is mounted on the first principal surface 91 of the mounting substrate 9. Furthermore, in the high-frequency module 100c, the third inductor L3 of the matching circuit 114 is mounted on the second principal surface 92 of the mounting substrate 9. When viewed from above in the thickness direction D1 of the mounting substrate 9, the capacitor C3 is located between the transmit filter 131 and the receive filter 171. In the high-frequency module 100c according to Modification 3, the principal surfaces SL1 and SL3 of the first inductor L1 and the third inductor L3, respectively, on the side opposite to the mounting substrate 9, are exposed from the principal surface 191 of the second resin layer 19 on the side opposite to the mounting substrate 9.

[0132] In the high-frequency module 100c according to the third modification, the capacitor C3 constitutes the first electronic component 1. Figure 11 As shown, the first electronic component 1 has an electronic component body 2 and a plurality of (for example, two) external electrodes 3. The electronic component body 2 has a third main surface 23 and a fourth main surface 24, and an outer peripheral surface 25, which are opposite to each other in the thickness direction D1 of the mounting substrate 9. The electronic component body 2 has electrical insulation properties on the third main surface 23, the fourth main surface 24, and the outer peripheral surface 25. In the first electronic component 1, the third main surface 23 of the electronic component body 2 constitutes the main surface 11 of the first electronic component 1 and is in contact with the conductive layer 6. The plurality of external electrodes 3 are respectively arranged on the fourth main surface 24 of the electronic component body 2 and do not reach the third main surface 23. Accordingly, in the first electronic component 1, the plurality of external electrodes 3 are not in contact with the conductive layer 6. The plurality of external electrodes 3 are respectively arranged to span the fourth main surface 24 of the electronic component body 2 and the outer peripheral surface 25 of the electronic component body 2. The plurality of external electrodes 3 also do not reach the ridgeline between the third main surface 23 and the outer peripheral surface 25 of the electronic component body 2.

[0133] The material of the electronic component body 2 includes ceramic. The third main surface 23 of the electronic component body 2 is part of the portion of the electronic component body 2 formed of ceramic. The capacitor C3 constituting the first electronic component 1 is a multilayer ceramic capacitor. The electronic component body 2 has a multilayer ceramic structure 20, a plurality of first internal electrodes 28, and a plurality of second internal electrodes 29. In capacitor C3, the plurality of first internal electrodes 28 are connected to one of the two external electrodes 3, and the plurality of second internal electrodes 29 are connected to the other of the two external electrodes 3. In capacitor C3, the plurality of first internal electrodes 28 and the plurality of second internal electrodes 29 are arranged alternately and spaced apart from each other in the thickness direction D1 of the mounting substrate 9. In the first electronic component 1, the multilayer ceramic structure 20 constitutes the electrical insulator portion 21 of the electronic component body 2. The plurality of first internal electrodes 28, the plurality of second internal electrodes 29, and the two external electrodes 3 constitute the circuit element 15 included in the first electronic component 1. The component value of the circuit element 15 is capacitance. In the first electronic component 1, the multilayer ceramic structure 20 constitutes the electrical insulator portion 21 in the electronic component body 2. The circuit element 15 included in the first electronic component 1 is formed by a plurality of first internal electrodes 28, a plurality of second internal electrodes 29, and two external electrodes 3. The plurality of first internal electrodes 28 and the plurality of second internal electrodes 29 constitute the conductor portion 14, which is disposed within the electrical insulator portion 21 in the electronic component body 2 and constitutes a portion of the circuit element 15. In the electronic component 1 in the high-frequency module 100c according to the third modification, the "electronic component body 2" refers to the portion of the electronic component 1 excluding the plurality of external electrodes 3 and is a structure including the electrical insulator portion 21 and the plurality of first internal electrodes 28 and the plurality of second internal electrodes 29. The electrical insulator portion 21 has a third principal surface 23 constituting the principal surface 11 of the electronic component 1 and an outer peripheral surface 25 constituting a portion of the outer peripheral surface 13 of the electronic component 1. The plurality of first internal electrodes 28 and the plurality of second internal electrodes 29 are disposed within the electrical insulator portion 21. The size of the electronic component body 2 is substantially the same as that of the electronic component 1. The shape of the electrical insulator portion 21 is, for example, a rectangular parallelepiped. The electrical insulator portion 21 is composed of a plurality of laminated dielectric layers (ceramic layers).

[0134] Furthermore, the high-frequency module 100c according to the third modification includes an IC chip 108 including a low-noise amplifier 121 and a first switch 104 (see FIG. Figure 9 as well as Figure 10 ).like Figure 10 As shown, the IC chip 108 is mounted on the second main surface 92 of the mounting substrate 9. Although not shown, a capacitor having the function of a bypass capacitor is mounted on the second main surface 92 of the mounting substrate 9 and is arranged on a path for supplying power to the low noise amplifier 121 and the like. Figure 10In the structure of Modification 3 described above, the first inductor L1, the third inductor L3, and the bypass capacitors mounted on the second principal surface 92 of the mounting substrate 9—in other words, the principal surface of the SMD mounted on the second principal surface 92 of the mounting substrate 9, which is opposite the mounting substrate 9 side—are arranged flush with the principal surface 191 of the second resin layer 19, which is opposite the mounting substrate 9 side. The principal surface of the SMD, which is opposite the mounting substrate 9 side, is exposed from the principal surface 191 of the second resin layer 19. This structure enables a thinner high-frequency module 100c. Furthermore, during the manufacture of high-frequency module 100c, the second resin layer 19, the SMD arranged on the second principal surface 92 of the mounting substrate 9, and the plurality of external connection terminals 8 are ground from the side opposite the mounting substrate 9 side, further thinning the high-frequency module 100c.

[0135] When viewed from the thickness direction D1 of the mounting substrate 9, Figure 9 As shown, the reception filter 171 overlaps with the IC chip 108. When viewed from above in the thickness direction D1 of the mounting substrate 9, the entire reception filter 171 overlaps with a portion of the IC chip 108. However, this is not limiting; the entire reception filter 171 may overlap with the entire IC chip 108. Furthermore, a portion of the reception filter 171 may overlap with the entire IC chip 108, or a portion of the reception filter 171 may overlap with a portion of the IC chip 108. Furthermore, in the high-frequency module 100c according to Modification 3, the three reception filters 171, 172, and 173 may overlap with the IC chip 108.

[0136] In the high-frequency module 100c, when viewed from the thickness direction D1 of the mounting substrate 9, Figure 9 As shown, the transmit filter 131 does not overlap with the IC chip 108 .

[0137] In high-frequency module 100c according to Modification 3, similarly to high-frequency module 100 according to Embodiment 1, third principal surface 23 of electronic component body 2 in electronic component 1 constitutes principal surface 11 of electronic component 1 and is in contact with conductive layer 6. Furthermore, multiple external electrodes 3 are provided on fourth principal surface 24 of electronic component body 2, not reaching third principal surface 23. Consequently, high-frequency module 100c according to Modification 3 can increase the component value (capacitance) of circuit elements 15 included in electronic component 1. Similar to high-frequency module 100 according to Embodiment 1, third principal surface 23 of electronic component body 2 constitutes principal surface 11 of electronic component 1 and is in contact with conductive layer 6. Therefore, the thickness of electrical insulator portion 21 can be increased compared to a case where electronic component 1 is not in contact with conductive layer 6. Accordingly, the high-frequency module 100c involved in the third modification can increase the number of first internal electrodes 28 and second internal electrodes 29 included in the conductor portion 14 constituting a part of the circuit element 15 (the number of pairs of first internal electrodes 28 and second internal electrodes 29 can be increased), thereby increasing the capacitance of the circuit element 15.

[0138] (Implementation Method 2)

[0139] Reference Figure 12 13, a high-frequency module 100d according to Embodiment 2 is described. Regarding the high-frequency module 100d according to Embodiment 2, the same components as those of the high-frequency module 100 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted. Furthermore, the high-frequency module 100d according to Embodiment 2, like the high-frequency module 100c according to Modification 3 of Embodiment 1, includes an IC chip 108 including a low-noise amplifier 121 and a first switch 104. Figure 12 As shown, the IC chip 108 is mounted on the second main surface 92 of the mounting substrate 9 .

[0140] In the high-frequency module 100d according to the second embodiment, some of the plurality of external electrodes 45 of the second electronic component 4 are in contact with the conductive layer 6. The external electrodes 45 in contact with the conductive layer 6 penetrate the second electronic component 4 in the thickness direction.

[0141] In the high-frequency module 100d according to the second embodiment, Figure 13 As shown, the structures of the transmission filter 131 and the reception filter 171 are different from those of the transmission filter 131 and the reception filter 171 in the high-frequency module 100 according to the first embodiment.

[0142] In the transmission filter 131 of the high-frequency module 100d according to the second embodiment, the substrate 401 is a silicon substrate and includes a low-acoustic-velocity film 420 provided on the first main surface 411 of the substrate 401 and a piezoelectric layer 430 provided on the low-acoustic-velocity film 420. In the transmission filter 131, the substrate 401, the low-acoustic-velocity film 420, and the piezoelectric layer 430 constitute a piezoelectric substrate. In the transmission filter 131, a circuit portion 414 including a plurality of IDT electrodes 415 is formed on the piezoelectric layer 430.

[0143] The low-acoustic-velocity film 420 is located at a position separated from the outer periphery of the substrate 401 when viewed from above in the thickness direction of the substrate 401. The transmission filter 131 also includes an insulating layer 450 that covers the area of ​​the first main surface 411 of the substrate 401 that is not covered by the low-acoustic-velocity film 420. The insulating layer 450 has electrical insulating properties. The insulating layer 450 is formed on the first main surface 411 of the substrate 401 along the outer edge of the substrate 401. The insulating layer 450 surrounds the multiple IDT electrodes 415. When viewed from above in the thickness direction of the substrate 401, the insulating layer 450 has a frame shape (e.g., a rectangular frame). A portion of the insulating layer 450 overlaps with the outer periphery of the piezoelectric layer 430 in the thickness direction of the substrate 401. The outer periphery of the piezoelectric layer 430 and the outer periphery of the low-acoustic-velocity film 420 are covered by the insulating layer 450. The insulating layer 450 is made of a material such as epoxy resin or polyimide.

[0144] The material of the piezoelectric layer 430 is, for example, lithium niobate or lithium tantalate. The low-acoustic-velocity film 420 is a film in which the acoustic velocity of the bulk wave propagating through the low-acoustic-velocity film 420 is lower than the acoustic velocity of the bulk wave propagating through the piezoelectric layer 430. The material of the low-acoustic-velocity film 420 is, for example, silicon oxide, but is not limited to silicon oxide. In the substrate 401, the acoustic velocity of the bulk wave propagating through the substrate 401 is higher than the acoustic velocity of the elastic wave propagating through the piezoelectric layer 430. Here, the bulk wave propagating through the substrate 401 is the bulk wave with the lowest acoustic velocity among the multiple bulk waves propagating through the substrate 401.

[0145] Transmit filter 131 may further include a high-acoustic-velocity film disposed between substrate 401 and low-acoustic-velocity film 420. The high-acoustic-velocity film is a film in which the acoustic velocity of bulk waves propagating through the high-acoustic-velocity film is higher than the acoustic velocity of elastic waves propagating through piezoelectric layer 430. The material of the high-acoustic-velocity film is, for example, silicon nitride, but is not limited to silicon nitride. The material may also include at least one material selected from the group consisting of diamond-like carbon, aluminum nitride, silicon carbide, silicon nitride, silicon oxynitride, silicon, sapphire, lithium tantalate, lithium niobate, quartz, zirconium oxide, cordierite, mullite, steatite, forsterite, magnesium oxide, and diamond.

[0146] When the wavelength of the elastic wave determined by the electrode finger period of the IDT electrode 415 is λ, the thickness of the piezoelectric layer 430 is, for example, 3.5λ or less. The thickness of the low acoustic velocity film 420 is, for example, 2.0λ or less.

[0147] The transmission filter 131 may also include, for example, a close contact layer between the low-acoustic-velocity film 420 and the piezoelectric layer 430. The close contact layer may include, for example, a resin (epoxy resin, polyimide resin). Furthermore, the transmission filter 131 may include a dielectric film between the low-acoustic-velocity film 420 and the piezoelectric layer 430, on the piezoelectric layer 430, or below the low-acoustic-velocity film 420.

[0148] External electrode 45 in contact with conductive layer 6 penetrates substrate 401, insulating layer 450, spacer 417, and lid member 418. The portion of external electrode 45 in contact with conductive layer 6 that penetrates substrate 401 is, for example, a TSV (through-silicon via).

[0149] In the reception filter 171 of the high-frequency module 100d according to the second embodiment, the substrate 1001 is a silicon substrate and includes a low-acoustic-velocity film 1020 provided on the first main surface 1011 of the substrate 1001 and a piezoelectric layer 1030 provided on the low-acoustic-velocity film 1020. In the reception filter 171, the substrate 1001, the low-acoustic-velocity film 1020, and the piezoelectric layer 1030 constitute a piezoelectric substrate. In the reception filter 171, a circuit portion 1014 including a plurality of IDT electrodes 1015 is formed on the piezoelectric layer 1030.

[0150] The low-acoustic-velocity film 1020 is located at a position separated from the outer periphery of the substrate 1001 when viewed from above in the thickness direction of the substrate 1001. The receive filter 171 further includes an insulating layer 1050 covering the area of ​​the first main surface 1011 of the substrate 1001 not covered by the low-acoustic-velocity film 1020. The insulating layer 1050 has electrical insulating properties. The insulating layer 1050 is formed on the first main surface 1011 of the substrate 1001 along the outer edge of the substrate 1001. The insulating layer 1050 surrounds the plurality of IDT electrodes 1015. When viewed from above in the thickness direction of the substrate 1001, the insulating layer 1050 has a frame shape (e.g., a rectangular frame). A portion of the insulating layer 1050 overlaps with the outer periphery of the piezoelectric layer 1030 in the thickness direction of the substrate 1001. The outer periphery of the piezoelectric layer 1030 and the outer periphery of the low-acoustic-velocity film 1020 are covered by the insulating layer 1050. The material of the insulating layer 1050 is epoxy resin, polyimide, or the like.

[0151] The material of the piezoelectric layer 1030 is, for example, lithium niobate or lithium tantalate. The low-acoustic-velocity film 1020 is a film in which the acoustic velocity of bulk waves propagating through the low-acoustic-velocity film 1020 is lower than the acoustic velocity of bulk waves propagating through the piezoelectric layer 1030. The material of the low-acoustic-velocity film 1020 is, for example, silicon oxide, but is not limited to silicon oxide and may also include at least one material selected from the group consisting of tantalum oxide and compounds obtained by adding fluorine, carbon, or boron to silicon oxide.

[0152] The reception filter 171 may further include a high acoustic velocity film provided between the substrate 1001 and the low acoustic velocity film 1020 .

[0153] In the high-frequency module 100d according to the second embodiment, similarly to the high-frequency module 100 according to the first embodiment, the third main surface 23 (see Figure 3 ) constitutes the main surface 11 of the electronic component 1 and is in contact with the conductive layer 6. In addition, the plurality of external electrodes 3 are respectively provided on the fourth main surface 24 of the electronic component body 2 and do not reach the third main surface 23 (see Figure 3 ). Thus, the high-frequency module 100d according to the second embodiment can increase the size of the circuit element 15 included in the electronic component 1 (see Figure 3 ) component value (inductance).

[0154] Furthermore, in the high-frequency module 100 d according to the second embodiment, the external electrode 45 in contact with the conductive layer 6 penetrates the second electronic component 4 in the thickness direction, thereby enhancing the grounding of the transmission filter 131 constituting the second electronic component 4 .

[0155] (Other Modifications)

[0156] The above-mentioned embodiments 1 and 2 are merely one of various embodiments of the present invention. As long as the purpose of the present invention can be achieved, various modifications can be made to the above-mentioned embodiments 1 and 2 according to design, etc., and different structural elements of different embodiments can be appropriately combined.

[0157] For example, in the first electronic component 1 , the plurality of external electrodes 3 are not limited to being provided across the fourth principal surface 24 and the outer peripheral surface 25 of the electronic component body 2 , but may be provided on the fourth principal surface 24 of the fourth principal surface 24 and the outer peripheral surface 25 .

[0158] Furthermore, the first electronic component 1 is not limited to an inductor or a capacitor, and may be, for example, Figure 14 The LC filter shown in the figure is Figure 14 The first electronic component 1 composed of the LC filter shown has four external electrodes 3 arranged to span the fourth main surface 24 and the outer peripheral surface 25 of the electronic component body 2. The four external electrodes 3 include an external electrode 3 corresponding to the input terminal of the LC filter, an external electrode 3 corresponding to the output terminal of the LC filter, and two external electrodes 3 corresponding to the two ground terminals of the LC filter. In the case where the first electronic component 1 is an LC filter, the circuit elements included in the first electronic component 1 are inductors and capacitors. The LC filter is, for example, a low-pass filter or a high-pass filter. In the case where the LC filter is, for example, a low-pass filter, the LC filter is provided at the antenna terminal 81 (see Figure 5) and the first switch 104 (refer to Figure 5 ) on the signal path between .

[0159] In high-frequency modules 100a, 100b, 100c, and 100d, resin layer 5 is not limited to covering the entirety of outer peripheral surface 13 of first electronic component 1; it is sufficient to cover at least a portion of outer peripheral surface 13. Furthermore, resin layer 5 is not limited to covering the entirety of outer peripheral surface 43 of second electronic component 4; it is sufficient to cover at least a portion of outer peripheral surface 43. Furthermore, resin layer 5 is not limited to covering the entirety of outer peripheral surface 73 of third electronic component 7; it is sufficient to cover at least a portion of outer peripheral surface 73. Furthermore, resin layer 5 is not limited to covering the entirety of principal surface 71 of third electronic component 7; it is sufficient to cover at least a portion of principal surface 71. Furthermore, resin layer 5 is not limited to covering the entirety of outer peripheral surface 103 of fourth electronic component 10; it is sufficient to cover at least a portion of outer peripheral surface 103.

[0160] Furthermore, in high-frequency modules 100a, 100b, 100c, and 100d, conductive layer 6 is not limited to covering the entire principal surface 51 of resin layer 5; it is sufficient to cover at least a portion of principal surface 51 of resin layer 5. Furthermore, conductive layer 6 is not limited to covering the entire principal surface 11 of first electronic component 1; it is sufficient to cover at least a portion of principal surface 11 of first electronic component 1. Furthermore, conductive layer 6 is not limited to covering the entire principal surface 41 of second electronic component 4; it is sufficient to cover at least a portion of principal surface 41 of second electronic component 4. Furthermore, conductive layer 6 is not limited to covering the entire principal surface 101 of fourth electronic component 10; it is sufficient to cover at least a portion of principal surface 101 of fourth electronic component 10.

[0161] Furthermore, in the high-frequency module 100, the first electronic component 1 may be positioned between the first inductor L1 included in the output matching circuit 113 and the second inductor L2 included in the input matching circuit 123 when viewed in plan from the thickness direction D1 of the mounting substrate 9. In this case, in the high-frequency module 100, electromagnetic coupling between the first inductor L1 included in the output matching circuit 113 and the second inductor L2 included in the input matching circuit 123 can be suppressed.

[0162] Furthermore, in high-frequency modules 100a, 100b, 100c, and 100d, the second set of circuit components mounted on second principal surface 92 of mounting substrate 9 may be mounted on first principal surface 91 instead of second principal surface 92 of mounting substrate 9. In this case, no circuit components are mounted on second principal surface 92 of mounting substrate 9 in high-frequency modules 100a, 100b, 100c, and 100d.

[0163] Furthermore, in high-frequency modules 100, 100b, and 100d, similar to high-frequency module 100c, the principal surface of the circuit components (second principal surface-side electronic components) mounted on second principal surface 92 of mounting substrate 9, which is opposite to the mounting substrate 9 side, can be exposed from principal surface 191 of second resin layer 19, which is opposite to the mounting substrate 9 side. This allows high-frequency modules 100, 100b, and 100d to be thinner. The circuit components mounted on second principal surface 92 of mounting substrate 9 and exposed on the principal surface opposite to the mounting substrate 9 side are, for example, capacitors, inductors, LC filters, elastic wave filters, or IC chips. Furthermore, the circuit components mounted on second principal surface 92 of mounting substrate 9 and exposed on the principal surface opposite to the mounting substrate 9 side are multilayer ceramic capacitors or capacitors formed on a silicon substrate.

[0164] Furthermore, the multiple transmit filters 131-133 and the multiple receive filters 171-173 are not limited to surface acoustic wave filters; for example, they may also be BAW (bulk acoustic wave) filters. The resonators in BAW filters are, for example, FBAR (film bulk acoustic resonator) or SMR (solidly mounted resonator). BAW filters have a substrate, such as a silicon substrate.

[0165] Furthermore, each of the plurality of transmission filters 131 to 133 and the plurality of reception filters 171 to 173 is not limited to a ladder filter, and may be, for example, a longitudinally coupled resonator type surface acoustic wave filter.

[0166] Furthermore, the elastic wave filter described above utilizes surface acoustic waves or bulk acoustic waves, but is not limited thereto. For example, an elastic wave filter utilizing boundary acoustic waves, plate waves, or the like may also be employed.

[0167] The circuit configuration of the high-frequency modules 100 to 100 d is not limited to the above-described example. Alternatively, the high-frequency modules 100 to 100 d may include a high-frequency front-end circuit compatible with MIMO (Multi Input Multi Output), for example.

[0168] Furthermore, the communication device 300 according to the first embodiment may include any one of the high-frequency modules 100 a , 100 b , 100 c , and 100 d instead of the high-frequency module 100 .

[0169] (Way)

[0170] This specification discloses the following aspects.

[0171] The high-frequency module (100; 100a; 100b; 100c; 100d) involved in the first embodiment includes a mounting substrate (9), an electronic component (1), a resin layer (5) and a conductive layer (6). The mounting substrate (9) has a first main surface (91) and a second main surface (92) facing each other. The electronic component (1) is mounted on the first main surface (91) of the mounting substrate (9). The resin layer (5) is arranged on the first main surface (91) of the mounting substrate (9) and covers at least a portion of the outer peripheral surface (13) of the electronic component (1). The conductive layer (6) covers at least a portion of the main surface (51) of the resin layer (5) on the opposite side to the mounting substrate (9) side and at least a portion of the main surface (11) of the electronic component (1) on the opposite side to the mounting substrate (9) side. The electronic component (1) has an electronic component body (2) and a plurality of external electrodes (3). The electronic component body (2) includes an electrical insulator portion (21) and a conductor portion (14) disposed within the electrical insulator portion (21) and constituting at least a portion of a circuit element (15) of the electronic component (1). The electronic component body (2) has a third main surface (23) and a fourth main surface (24) facing each other, and an outer peripheral surface (25). In the electronic component (1), the third main surface (23) of the electronic component body (2) constitutes the main surface (11) of the electronic component (1) and is in contact with the conductive layer (6). A plurality of external electrodes (3) are respectively disposed on the fourth main surface (24) of the electronic component body (2) and do not reach the third main surface (23).

[0172] The high-frequency module (100; 100a; 100b; 100c; 100d) according to the first embodiment can increase the element value of the circuit element (15) included in the electronic component (1).

[0173] In the high-frequency module (100; 100a; 100b; 100c; 100d) involved in the second embodiment, according to the first embodiment, multiple external electrodes (3) are respectively arranged to span the fourth main surface (24) of the electronic component body (2) and the outer peripheral surface (25) of the electronic component body (2).

[0174] In the high-frequency module (100; 100a; 100b; 100c; 100d) according to the second embodiment, it is possible to improve the bonding strength between the mounting substrate (9) and the electronic component (1).

[0175] In the high-frequency module (100; 100a; 100b; 100c; 100d) according to the third aspect, according to the first or second aspect, the electronic component (1) is any one of a capacitor, an inductor, and an LC filter.

[0176] In the high-frequency module (100; 100a; 100b; 100c; 100d) involved in the third embodiment, when the electronic component (1) is a capacitor (C3), the capacitance can be increased; when the electronic component (1) is an inductor (second inductor L2), the inductance can be increased; when the electronic component (1) is an LC filter, at least one of the inductance of the inductor included in the LC filter and the capacitance of the capacitor included in the LC filter can be increased.

[0177] In the high-frequency module according to the fourth embodiment, the material of the electrical insulator portion (multilayer ceramic structure 20) includes ceramic according to the third embodiment. The third main surface (23) of the electronic component body (2) is a portion of the portion of the electronic component body (2) formed of ceramic.

[0178] In the high-frequency module (100; 100a; 100b; 100c; 100d) according to the fifth aspect, according to the fourth aspect, the electronic component (1) is a laminated ceramic capacitor, a laminated ceramic inductor, or a laminated ceramic LC filter.

[0179] The high-frequency module (100; 100a; 100b; 100c; 100d) according to the sixth embodiment further comprises a second electronic component (4) mounted on a first main surface (91) of a mounting substrate (9) different from the first electronic component (1) serving as the electronic component (1). The resin layer (5) covers at least a portion of an outer peripheral surface (43) of the second electronic component (4). The conductive layer (6) covers at least a portion of a main surface (41) of the second electronic component (4) that is opposite to the mounting substrate (9). In the second electronic component (4), the main surface (41) of the second electronic component (4) is in contact with the conductive layer (6).

[0180] The high-frequency module (100; 100a; 100b; 100c; 100d) according to the sixth aspect can achieve a reduction in thickness of the high-frequency module (100; 100a; 100b; 100c; 100d).

[0181] In the high-frequency module (100d) according to the seventh aspect, according to the sixth aspect, the second electronic component (4) has a plurality of external electrodes (45), and some of the plurality of external electrodes (45) of the second electronic component (4) are in contact with the conductive layer (6).

[0182] The high-frequency module (100d) according to the seventh embodiment is capable of electrically connecting a portion of the external electrode (45) of the second electronic component (4) to the conductive layer (6).

[0183] In the high-frequency module (100d) according to the eighth aspect, according to the seventh aspect, a portion of the plurality of external electrodes (45) penetrates the second electronic component (4) in the thickness direction.

[0184] The high-frequency module (100d) according to the eighth aspect can enhance the grounding of the second electronic component (4).

[0185] In the high-frequency module (100; 100a; 100b; 100c; 100d) according to any one of the sixth to eighth embodiments, the second electronic component (4) includes a substrate (401) and a circuit portion (414). The substrate (401) has a first main surface (411) and a second main surface (412) facing each other. The circuit portion (414) is formed on the first main surface (411) side of the substrate (401). In the second electronic component (4), the second main surface (412) of the substrate (401) constitutes the main surface (41) of the second electronic component (4). The second electronic component (4) is an elastic wave filter or an IC chip.

[0186] In the high-frequency module (100; 100a; 100b; 100c) according to the tenth aspect, according to the ninth aspect, the second electronic component (4) is an elastic wave filter, and the substrate (401) is a lithium tantalate substrate or a lithium niobate substrate.

[0187] In the high-frequency module (100d) according to the eleventh aspect, according to the ninth aspect, the substrate (401) is a silicon substrate.

[0188] In the high-frequency module (100; 100a; 100b; 100c; 100d) involved in the twelfth embodiment, according to any one of the sixth to eleventh embodiments, when a plane that is orthogonal to the thickness direction (D1) of the mounting substrate (9) and includes at least a portion of the first main surface (91) is set as a reference plane (RP1), a first distance (H1) between the reference plane (RP1) and the main surface (11) of the first electronic component (1) and a second distance (H2) between the reference plane (RP1) and the main surface (41) of the second electronic component (4) are the same.

[0189] The high-frequency module (100; 100a; 100b; 100c; 100d) according to the twelfth embodiment can achieve thinning in the thickness direction (D1) of the mounting substrate (9).

[0190] In the high-frequency module (100; 100a; 100b; 100c; 100d) according to the 13th embodiment, according to any one of the 6th to 12th embodiments, the main surface (11) of the first electronic component (1) and the main surface (41) of the second electronic component (4) are respectively rough surfaces.

[0191] The high-frequency module (100; 100a; 100b; 100c; 100d) according to the thirteenth embodiment can improve the adhesion between the main surface (11) of the first electronic component (1) and the main surface (41) of the second electronic component (4) and the conductive layer (6).

[0192] The high-frequency module (100; 100a; 100b; 100c; 100d) according to the 13th embodiment further includes a third electronic component (7). The third electronic component (7) is mounted on the first main surface (91) of the mounting substrate (9) and is shorter than the first electronic component (1) and the second electronic component (4). The resin layer (5) covers the main surface (71) of the third electronic component (7) that is opposite to the mounting substrate (9). The maximum height roughness of each of the main surface (11) of the first electronic component (1) and the main surface (41) of the second electronic component (4) is greater than the maximum height roughness of the main surface (71) of the third electronic component (7).

[0193] The high-frequency module (100; 100a; 100b; 100c; 100d) according to the fourteenth embodiment can improve the adhesion between the main surface (11) of the first electronic component (1) and the main surface (41) of the second electronic component (4) and the conductive layer (6).

[0194] The high-frequency module (100b) involved in the 15th embodiment further includes a fourth electronic component (10) mounted on the first main surface (91) of the mounting substrate (9) according to the 14th embodiment. The resin layer (5) covers at least a portion of the outer peripheral surface (103) of the fourth electronic component (10). The conductive layer (6) covers at least a portion of the main surface (101) of the fourth electronic component (10) that is opposite to the mounting substrate (9) side. In the fourth electronic component (10), the main surface (101) of the fourth electronic component (10) is in contact with the conductive layer (6). The materials of the portions of the first electronic component (1), the second electronic component (4), and the fourth electronic component (10) that are in contact with the conductive layer (6) are different from each other.

[0195] The high-frequency module (100c) according to the sixteenth embodiment further comprises a fourth electronic component (10) according to any one of the sixth to fourteenth embodiments. The fourth electronic component (10) is mounted on the first main surface (91) of the mounting substrate (9). The second electronic component (4) is a transmitting filter (131). The fourth electronic component (10) is a receiving filter (171). The first electronic component (1) is located between the second electronic component (4) and the fourth electronic component (10) when viewed from above in the thickness direction (D1) of the mounting substrate (9).

[0196] The high-frequency module (100c) according to the sixteenth embodiment can suppress electromagnetic coupling between the transmission filter (131) constituting the second electronic component (4) and the reception filter (171) constituting the fourth electronic component (10). Furthermore, the high-frequency module (100c) according to the sixteenth embodiment can suppress a temperature rise of the transmission filter (131) because the transmission filter (131) as the second electronic component (4) is in contact with the conductive layer (6). Consequently, the high-frequency module (100c) can stabilize the temperature characteristics of the transmission filter (131), thereby stabilizing the characteristics of the high-frequency module (100c).

[0197] The high-frequency module (100; 100a; 100b; 100c; 100d) according to the 17th embodiment further comprises a power amplifier (111), an output matching circuit (113), a low-noise amplifier (121), and an input matching circuit (123). The power amplifier (111) is mounted on the first main surface (91) of the mounting substrate (9). The output matching circuit (113) is connected to the output terminal of the power amplifier (111). The low-noise amplifier (121) is mounted on the second main surface (92) of the mounting substrate (9). The input matching circuit (123) is connected to the input terminal of the low-noise amplifier (121). The output matching circuit (113) includes a first inductor (L1). The input matching circuit (123) includes a second inductor (L2). The electronic component (1) is located between the first inductor (L1) and the second inductor (L2) when viewed from above in the thickness direction (D1) of the mounting substrate (9).

[0198] The high-frequency module (100; 100a; 100b; 100c; 100d) according to the seventeenth embodiment is capable of suppressing electromagnetic coupling between a first inductor (L1) included in an output matching circuit (113) and a second inductor (L2) included in an input matching circuit (123).

[0199] The high-frequency module (100; 100a; 100b; 100c; 100d) according to the eighteenth embodiment is further provided with a plurality of external connection terminals (8). The plurality of external connection terminals (8) are arranged on the second main surface (92) of the mounting substrate (9). The plurality of external connection terminals (8) include a ground terminal (85) connected to the conductive layer (6).

[0200] The high-frequency module (100; 100a; 100b; 100c; 100d) according to the eighteenth embodiment can make the potential of the conductive layer (6) and the potential of the ground terminal (85) substantially the same.

[0201] The high-frequency module (100; 100a; 100b; 100c; 100d) involved in the 19th embodiment is based on any one of the 1st to 18th embodiments, and further includes circuit components (a first inductor L1, a third inductor L3) mounted on the second main surface (92) of the mounting substrate (9).

[0202] The high-frequency module (100; 100a; 100b; 100c; 100d) according to the nineteenth embodiment can achieve miniaturization of the high-frequency module (100; 100a; 100b; 100c; 100d) when viewed from above in the thickness direction (D1) of the mounting substrate (9).

[0203] In the high-frequency module (100; 100a; 100b; 100c; 100d) according to the 20th aspect, according to the 19th aspect, the circuit component is a capacitor, an inductor, an LC filter, an elastic wave filter, or an IC chip.

[0204] In the high-frequency module (100; 100a; 100b; 100c; 100d) involved in the 20th embodiment, when the circuit component is a capacitor, the capacitance can be increased; when the circuit component is an inductor (first inductor L1, third inductor L3), the inductance can be increased; when the circuit component is an LC filter, at least one of the inductance of the inductor included in the LC filter and the capacitance of the capacitor included in the LC filter can be increased.

[0205] In the high-frequency module (100; 100a; 100b; 100c; 100d) according to the 21st aspect, according to the 20th aspect, the circuit component is a multilayer ceramic capacitor or a capacitor formed on a silicon substrate.

[0206] The high-frequency module (100; 100b; 100c; 100d) according to the 22nd embodiment is further provided with a second resin layer (19) different from the first resin layer (5) serving as the resin layer (5). The second resin layer (19) is arranged on the second main surface (92) of the mounting substrate (9) and covers at least a portion of the outer peripheral surface of the circuit component.

[0207] The high-frequency module (100; 100b; 100c; 100d) according to the twenty-second embodiment can protect circuit components by the second resin layer (19).

[0208] In the high-frequency module (100; 100b; 100c; 100d) involved in the 23rd embodiment, according to the 22nd embodiment, the main surface (SL1, SL3) of the circuit component (the first inductor L1, the third inductor L3) on the side opposite to the mounting substrate (9) side is exposed from the main surface (191) of the second resin layer (19) on the side opposite to the mounting substrate (9) side.

[0209] The high-frequency module (100; 100b; 100c; 100d) according to the twenty-third aspect can be reduced in thickness.

[0210] A communication device (300) according to a 24th embodiment comprises a high-frequency module (100; 100a; 100b; 100c; 100d) according to any one of the 1st to 23rd embodiments and a signal processing circuit (301). The signal processing circuit (301) is connected to the high-frequency module (100; 100a; 100b; 100c; 100d).

[0211] In the communication device (300) according to the twenty-fourth embodiment, the element value of the circuit element (15) included in the electronic component (1) can be increased.

[0212] Description of Reference Numerals

[0213] 1 electronic component (first electronic component)

[0214] 11 Main side (1st main side)

[0215] 13 outer surface

[0216] 14 Conductor

[0217] 15 Circuit Elements

[0218] 2 Electronic component body

[0219] 20 Multilayer ceramic structure

[0220] 21 Electrical insulator

[0221] 23 3rd Main Side

[0222] 24 Main side 4

[0223] 25 outer surface

[0224] 26 Winding

[0225] 27 Conductor layer

[0226] 28 1st internal electrode

[0227] 29 Second internal electrode

[0228] 3 External electrodes

[0229] 4 Second electronic component

[0230] 41 Main side

[0231] 43 outer surface

[0232] 45 External electrodes

[0233] 401 substrate

[0234] 411 Main side 1

[0235] 412 2nd Main Side

[0236] 414 Circuit Department

[0237] 415 IDT electrode

[0238] 417 Interval Layer

[0239] 418 cover member

[0240] 420 Low Acoustic Velocity Membrane

[0241] 430 Piezoelectric layer

[0242] 5. Resin layer (first resin layer)

[0243] 51 Main side

[0244] 53 outer surface

[0245] 6 Conductive layer

[0246] 7. Third electronic component

[0247] 8 External connection terminals

[0248] 81 Antenna terminal

[0249] 82 signal input terminal

[0250] 83 signal output terminal

[0251] 84 control terminals

[0252] 85 ground terminal

[0253] 9 Install the base plate

[0254] 91 Main side 1

[0255] 92 2nd Main Side

[0256] 93 outer surface

[0257] 10. Fourth electronic component

[0258] 101 Main side

[0259] 103 outer surface

[0260] 1045 External Electrode

[0261] 1001 substrate

[0262] 1011 Main side 1

[0263] 1012 2nd main side

[0264] 1014 Circuit Department

[0265] 1015 IDT electrode

[0266] 1017 Interval Layer

[0267] 1018 Cover member

[0268] 19 2nd resin layer

[0269] 191 Main side

[0270] 193 outer surface

[0271] 104 1st switch

[0272] 140 common terminal

[0273] 141, 142, 143 Select terminals

[0274] 105 2nd switch

[0275] 150 common terminal

[0276] 151, 152, 153 Select terminals

[0277] 106 3rd switch

[0278] 160 common terminal

[0279] 161, 162, 163 Select terminals

[0280] 108 IC chips

[0281] 111 Power Amplifier

[0282] 113 Output Matching Circuit

[0283] 114 Matching Circuit

[0284] 115 Controller

[0285] 1150 base plate

[0286] 1151 1st Main Side

[0287] 1152 2nd main side

[0288] 1154 Circuit Department

[0289] 121 Low Noise Amplifier

[0290] 123 Input Matching Circuit

[0291] 131 Transmit filter (1st transmit filter)

[0292] 132 Transmit filter (2nd transmit filter)

[0293] 133 Transmit filter (3rd transmit filter)

[0294] 171 Receive filter (1st receive filter)

[0295] 172 Receive filter (second receive filter)

[0296] 173 Receive filter (3rd receive filter)

[0297] 100, 100a, 100b, 100c, 100d high-frequency modules

[0298] 300 communication device

[0299] 301 Signal Processing Circuit

[0300] 302 RF signal processing circuit

[0301] 303 Baseband Signal Processing Circuit

[0302] 310 Antenna

[0303] C3 capacitor

[0304] D1 thickness direction

[0305] H1 1st distance

[0306] H2 2nd distance

[0307] H3 3rd distance

[0308] H4 4th distance

[0309] H5 Distance 5

[0310] L1 1st inductor

[0311] SL1 main surface

[0312] L2 Second inductor

[0313] L3 3rd inductor

[0314] SL3 main surface

[0315] r1 signal path

[0316] T1 connection point.

Claims

1. A high-frequency module comprising: A mounting substrate having a first main surface and a second main surface facing each other; an electronic component mounted on the first main surface of the mounting substrate; a resin layer disposed on the first main surface of the mounting substrate and covering at least a portion of an outer peripheral surface of the electronic component; as well as a conductive layer covering at least a portion of the principal surface of the resin layer on the side opposite to the mounting substrate and at least a portion of the principal surface of the electronic component on the side opposite to the mounting substrate, The electronic component has: an electronic component body including an electrical insulator portion and a conductor portion disposed within the electrical insulator portion and constituting at least a portion of a circuit element of the electronic component, and having a third and fourth principal surfaces facing each other and an outer peripheral surface; as well as Multiple external electrodes, In the electronic component, The third main surface of the electronic component body constitutes the main surface of the electronic component and is in contact with the conductive layer. The plurality of external electrodes are respectively provided on the fourth main surface of the electronic component body and do not reach the third main surface. The plurality of external electrodes are respectively provided so as to straddle the fourth main surface of the electronic component body and the outer peripheral surface of the electronic component body.

2. The high-frequency module according to claim 1, wherein The electronic component is any one of a capacitor, an inductor, and an LC filter.

3. The high-frequency module according to claim 1 or 2, wherein: The material of the electrical insulator portion includes ceramic, The third main surface of the electronic component body is a portion of a portion of the electronic component body formed of ceramic.

4. The high-frequency module according to claim 3, wherein: The electronic component is a laminated ceramic capacitor, a laminated ceramic inductor, or a laminated ceramic LC filter.

5. The high-frequency module according to claim 1 or 2, wherein: The high-frequency module further includes a second electronic component mounted on the first main surface of the mounting substrate, the second electronic component being different from the first electronic component. The resin layer covers at least a portion of the outer peripheral surface of the second electronic component. The conductive layer covers at least a portion of a main surface of the second electronic component that is opposite to the mounting substrate. In the second electronic component, the main surface of the second electronic component is in contact with the conductive layer. The high-frequency module according to claim 5 , wherein: The second electronic component has a plurality of external electrodes. Some of the plurality of external electrodes of the second electronic component are in contact with the conductive layer.

7. The high-frequency module according to claim 6, wherein: The part of the plurality of external electrodes penetrates the second electronic component in the thickness direction.

8. The high-frequency module according to claim 5, wherein The second electronic component includes: a substrate having a first main surface and a second main surface facing each other; and a circuit portion formed on the first main surface side of the substrate, In the second electronic component, the second main surface of the substrate constitutes the main surface of the second electronic component. The second electronic component is an elastic wave filter or an IC chip.

9. The high-frequency module according to claim 8, wherein The second electronic component is an elastic wave filter, The substrate is a lithium tantalate substrate or a lithium niobate substrate.

10. The high-frequency module according to claim 8, wherein The substrate is a silicon substrate.

11. The high-frequency module according to claim 5, wherein When a plane perpendicular to the thickness direction of the mounting substrate and including at least a portion of the first main surface is set as a reference plane, A first distance between the reference plane and the main surface of the first electronic component and a second distance between the reference plane and the main surface of the second electronic component are the same.

12. The high-frequency module according to claim 5, wherein The main surface of the first electronic component and the main surface of the second electronic component are both rough surfaces.

13. The high frequency module according to claim 12, wherein: The high-frequency module further includes a third electronic component mounted on the first main surface of the mounting substrate and shorter than the first electronic component and the second electronic component. The resin layer covers the main surface of the third electronic component on the opposite side to the mounting substrate side. The maximum height roughness of each of the main surface of the first electronic component and the main surface of the second electronic component is greater than the maximum height roughness of the main surface of the third electronic component.

14. The high-frequency module according to claim 13, wherein: The high-frequency module further includes a fourth electronic component mounted on the first main surface of the mounting substrate. The resin layer covers at least a portion of the outer peripheral surface of the fourth electronic component. The conductive layer covers at least a portion of the main surface of the fourth electronic component that is opposite to the mounting substrate side. In the fourth electronic component, the main surface of the fourth electronic component is in contact with the conductive layer. Portions of the first electronic component, the second electronic component, and the fourth electronic component that are in contact with the conductive layer are made of different materials.

15. The high-frequency module according to claim 5, wherein The high-frequency module further includes a fourth electronic component mounted on the first main surface of the mounting substrate. The second electronic component is a transmission filter, The fourth electronic component is a reception filter. The first electronic component is located between the second electronic component and the fourth electronic component when viewed in plan from the thickness direction of the mounting substrate.

16. The high-frequency module according to claim 1 or 2, wherein: The high-frequency module further comprises: a power amplifier mounted on the first main surface of the mounting substrate; an output matching circuit connected to an output terminal of the power amplifier; a low-noise amplifier mounted on the second main surface of the mounting substrate; and an input matching circuit connected to an input terminal of the low noise amplifier, The output matching circuit includes a first inductor, The input matching circuit includes a second inductor, The electronic component is located between the first inductor and the second inductor when viewed in plan from the thickness direction of the mounting substrate.

17. The high-frequency module according to claim 1 or 2, wherein: The high-frequency module further includes a plurality of external connection terminals arranged on the second main surface of the mounting substrate. The plurality of external connection terminals include a ground terminal connected to the conductive layer.

18. The high-frequency module according to claim 1 or 2, wherein: The high-frequency module further includes a circuit component mounted on the second main surface of the mounting substrate.

19. The high-frequency module according to claim 18, wherein The circuit component is a capacitor, an inductor, an LC filter, an elastic wave filter, or an IC chip.

20. The high-frequency module according to claim 19, wherein The circuit component is a laminated ceramic capacitor or a capacitor formed on a silicon substrate.

21. The high frequency module according to claim 18, wherein The high-frequency module further includes a second resin layer different from the first resin layer serving as the resin layer. The second resin layer is disposed on the second main surface of the mounting substrate and covers at least a portion of the outer peripheral surface of the circuit component.

22. The high-frequency module according to claim 21, wherein The main surface of the circuit component on the side opposite to the mounting substrate is exposed from the main surface of the second resin layer on the side opposite to the mounting substrate.

23. A communication device comprising: The high-frequency module according to any one of claims 1 to 22; and A signal processing circuit is connected to the high frequency module.

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