Method for automatically controlling film thickness and element doping concentration in the film

Abstract

The present invention provides a method for automatically controlling film thickness and element doping concentration within the film, which is applicable to the field of semiconductor processing. Specifically, the method first uses the calculation formula provided by the present invention to calculate the total amount of reaction gas remaining in at least one batch of operations performed before a furnace tube reaction, that is, the actual amount of reaction gas remaining in the furnace tube reaction chamber. Then, based on the actual situation, the process compensation parameters required for this process are designed (set). Then, while forming the target film (or film layer) in the furnace tube reaction chamber, the influence of the residual reaction gas in the furnace tube reaction chamber on the film thickness and element doping concentration formed in this process is automatically eliminated.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a method for determining the residual amount of reaction gas in a reaction chamber and a method for automatically regulating film thickness and element doping concentration in the film using the determination method. Background Art

[0002] During the operation of semiconductor atmospheric-pressure oxidation furnaces and low-pressure chemical deposition furnaces, the presence of reactive gases, such as trans-dichloroethylene (DCE) and phosphine (PH3), will inevitably cause trace amounts of these gases to remain in the reaction chamber in some form. These residual gases will continue to participate in the film growth process of subsequent batches, resulting in thicker films or higher concentrations of specific elements in the films. Figure 1 This is an example diagram showing a 1% fluctuation in film thickness between different batches of a certain oxidation process in the prior art due to residual DCE (trans-dichloroethylene) gas in the reaction chamber after a DCE (trans-dichloroethylene) purge process in an atmospheric pressure oxidation furnace tube. Summary of the Invention

[0003] The object of the present invention is to provide a method for determining the residual amount of reaction gas in a reaction chamber and a method for automatically controlling the thickness of a film and the concentration of element doping in the film using the determination method. In the process of a semiconductor atmospheric pressure oxidation furnace tube process or a low-pressure chemical deposition furnace tube process, by setting process compensation parameters, the influence of the residual reaction gas in the furnace tube reaction chamber on the thickness of the film formed in each process and the concentration of element doping in the film is automatically eliminated.

[0004] In a first aspect, to solve the above technical problems, the present invention provides a method for determining the residual amount of reaction gas in a reaction chamber, which can be specifically applied to a semiconductor atmospheric pressure oxidation furnace tube process or a low-pressure chemical deposition furnace tube process. The determination method comprises at least the following steps:

[0005] For each process menu operation executed by the furnace tube, determine the initial residual amount of the reaction gas generated after each process menu operation is executed, and calculate the residual amount of the reaction gas remaining in each process menu operation before the subsequent n-th operation batch is executed based on the preset special gas residual equivalent calculation formula;

[0006] The residual amounts of reaction gas generated by the first n batches of operations previously executed in the furnace tube are accumulated to obtain the total residual amount of reaction gas in the reaction chamber of the furnace tube.

[0007] Further, the preset special gas residue equivalent calculation formula for calculating the residue amount of the reaction gas remaining after each process menu operation of the furnace tube before the subsequent nth batch operation is as follows:

[0008] Q , , n-1 , n , n-1 , n , , n , ,

[0013] ,

[0012] , n , n , 2 , n , 3-1 ,

[0015] ,

[0014] = Q i *(M i ) n-1

[0009] Where, Q n is the residue amount of the reaction gas remaining after each process menu operation before the subsequent nth operation batch, and Q i is the initial residue amount of the reaction gas generated by each process menu operation; M is the residue coefficient of the reaction gas after each batch operation of this process menu; the value range of M is: 0 < M ≤ 1, and the value range of n is: 1 < n < 10000.

[0010] Further, the calculation formula for the total residue amount of the reaction gas in the reaction chamber of the furnace tube is:

[0011] Q total = Q1 + Q2 + Q3 +... + Q n = Q1*(M1) 1-1 + Q2*(M2) 2-1 + Q3*(M3) 3-1 +... + Q n *(M n ) n-1

[0012] = Q1 + Q2*M2 + Q3*(M3) 2 +... + Q n *(M n ) n-1

[0013] Where, Q1, Q2, Q3,..., Q n are the initial residue amounts of the reaction gas corresponding to the 1st, 2nd, 3rd,.. nth batches of the process menu, and M1, M2, M3,..., M n are the residue coefficients of the reaction gas corresponding to the​​​​​Determine the type of process menu and operation batch to be performed on the furnace tube, and calculate the total residual amount of reaction gas in the reaction chamber of the furnace tube before the current process based on the type of process menu, operation batch and the method for determining the residual amount of reaction gas in the reaction chamber as described above;

[0016] Based on the total residual amount of reaction gas in the furnace tube reaction chamber before the current process, the process compensation parameters corresponding to the current process are set and the current process is executed, so as to automatically eliminate the influence of the residual gas in the furnace tube reaction chamber on the thickness of the film formed in the current process and the element doping concentration in the film while depositing the target film.

[0017] Furthermore, the process compensation parameter may include at least one of compensation operation time, compensation operation temperature and compensation residual gas flow.

[0018] Furthermore, the furnace tube may include three air inlets and five temperature control ends.

[0019] Furthermore, the calculation formula for the compensation operation time is as follows:

[0020] Δtime=Ctime*Q total

[0021] Among them, Δtime is specifically the compensation operation time, Ctime is specifically the time compensation coefficient originally set in the process menu corresponding to this operation, which can be specifically obtained through the linear relationship between the total residual amount of the reaction gas in the actual operation and the film thickness. total Specifically, it refers to the total residual amount of reaction gas in the furnace tube reaction chamber before this operation.

[0022] Furthermore, the calculation formula for the compensation operating temperature is as follows:

[0023] ΔTemp1=Ctemp1*Q total

[0024] ΔTemp2=Ctemp2*Q total

[0025] ΔTemp3=Ctemp3*Q total

[0026] ΔTemp4=Ctemp4*Q total

[0027] ΔTemp5=Ctemp5*Q total

[0028] Among them, ΔTemp1~ΔTemp5 are specifically the five compensation operating temperatures corresponding to the five temperature control ends, and Ctemp1~Ctemp5 are specifically the five temperature compensation coefficients corresponding to the five temperature control ends, which can be obtained through the linear relationship between the total residual amount of the reaction gas and the film thickness in actual operation. total Specifically, it refers to the total residual amount of reaction gas in the furnace tube reaction chamber before this operation.

[0029] Furthermore, the calculation formula for compensating the residual gas flow is as follows:

[0030] ΔCmfc1=Cmfc1*Q total

[0031] ΔCmfc2=Cmfc2*Q total

[0032] ΔCmfc3=Cmfc3*Q total

[0033] Among them, ΔCmfc1~ΔCmfc3 are the three compensation operating temperatures corresponding to the three air inlets, and Cmfc1~Cmfc2 are the three gas flow compensation coefficients corresponding to the three air inlets, which can be obtained through the linear relationship between the total residual amount of the reaction gas and the film thickness in actual operation. total Specifically, it refers to the total residual amount of reaction gas in the furnace tube reaction chamber before this operation.

[0034] In a third aspect, the present invention further provides an electronic device, specifically comprising a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other via the communication bus;

[0035] Memory for storing computer programs;

[0036] The processor is used to implement the above-mentioned method steps for determining the residual amount of reaction gas in the reaction chamber, or the above-mentioned method steps for automatically controlling the film thickness and the element doping concentration in the film when executing the program stored in the memory.

[0037] In a fourth aspect, based on the same inventive concept, the present invention also provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, it implements the method steps for determining the residual gas amount in the reaction chamber as described above, or the method steps for automatically controlling the film thickness and the element doping concentration in the film.

[0038] Compared with the prior art, the technical solution of the present invention has at least one of the following beneficial effects:

[0039] The present invention provides a method for automatically controlling film thickness and element doping concentration within the film. Specifically, the method first uses the calculation formula provided by the present invention to calculate the total residual amount of reaction gas remaining from at least one batch of operations performed before a furnace tube reaction, that is, the actual residual amount of reaction gas currently present in the furnace tube reaction chamber. Then, based on this actual situation, the process compensation parameters required for this process are designed (set). Then, while depositing the target film (or film layer) in the furnace tube reaction chamber, the effect of the residual reaction gas in the furnace tube reaction chamber on the film thickness and element doping concentration formed in this process is automatically eliminated. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 This is an example diagram showing a 1% fluctuation in film thickness between different batches of a certain oxidation process in the prior art due to residual DCE (trans-dichloroethylene) gas in the reaction chamber after a DCE (trans-dichloroethylene) purge process in an atmospheric pressure oxidation furnace tube.

[0041] Figure 2 4 is a flow chart of a method for determining the residual amount of reaction gas in a reaction chamber according to one embodiment of the present invention.

[0042] Figure 3 FIG2 is a graph showing the film thickness trend of different batches of products of a certain process type after a DCE (residual reaction gas) reaction operation according to one embodiment of the present invention, and a curve showing the simulated impact of the residual reaction gas amount on subsequent batches calculated using the settings of M=0.67 and Q=0.67.

[0043] Figure 4 Schematic diagram of a flow chart of a method for automatically controlling film thickness and element doping concentration within a film provided in one embodiment of the present invention. DETAILED DESCRIPTION

[0044] As described in the background, during the operation of semiconductor atmospheric oxidation furnaces and low-pressure chemical deposition furnaces, the presence of reactive gases, such as trans-dichloroethylene (DCE) and phosphine (PH3), inevitably results in trace amounts of these gases remaining in the reaction chamber. These residual gases can contribute to the film growth of subsequent batches, resulting in thicker films or higher concentrations of specific elements within the films. Figure 1 This is an example diagram showing a 1% fluctuation in film thickness between different batches of a certain oxidation process in the prior art due to residual DCE (trans-dichloroethylene) gas in the reaction chamber after a DCE (trans-dichloroethylene) purge process in an atmospheric pressure oxidation furnace tube.

[0045] To this end, the present invention provides a method for determining the residual amount of reaction gas in a reaction chamber and a method for automatically controlling the film thickness and the element doping concentration in the film using the determination method. In the semiconductor atmospheric pressure oxidation furnace tube process or the low-pressure chemical deposition furnace tube process, by setting process compensation parameters, the influence of the residual gas in the furnace tube reaction chamber on the film thickness and the element doping concentration in the film formed in each process is automatically eliminated.

[0046] The following is a further detailed description of the method for determining the residual amount of reaction gas in the reaction chamber proposed by the present invention and the method for automatically controlling the film thickness and the element doping concentration in the film using the determination method, in conjunction with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will become clearer. It should be noted that the accompanying drawings are all in a very simplified form and are not in precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention can also be implemented in other ways different from those described herein, so the present invention is not limited to the specific embodiments disclosed below.

[0047] As shown in this application and the claims, unless the context clearly indicates an exception, the words "a", "an", "a kind" and / or "the" do not specifically refer to the singular and may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements. When describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional views showing the device structure will not be partially enlarged according to the general proportion, and the schematic views are only examples, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional spatial dimensions of length, width and depth should be included.

[0048] The following first introduces the method for determining the residual amount of reaction gas in the reaction chamber provided by the present invention.

[0049] See also Figure 2 , Figure 2 A flow chart of a method for determining the residual amount of reaction gas in a reaction chamber provided by the present invention is shown as follows: Figure 2 As shown, the method may include at least the following steps:

[0050] In step S201, for each process menu operation executed by the furnace tube, the initial residual amount of the reaction gas generated after each process menu operation is executed is determined, and based on the preset special gas residual equivalent calculation formula, the residual amount of the reaction gas remaining in each process menu operation executed before the subsequent nth operation batch is executed is calculated.

[0051] Typically, in actual operation, for each process menu operation executed by the furnace tube, a relatively fixed amount of reaction gas will remain in the furnace tube reaction chamber after the operation is completed, which is the initial residual amount of reaction gas of the corresponding batch. Then, after the subsequent n other batches of operations, the initial residual amount of reaction gas will decrease according to the trend of an exponential relationship. The present invention provides a way to specifically characterize the residual amount of reaction gas under such changes, which is the preset special gas residual equivalent calculation formula proposed by the present invention.

[0052] In this embodiment, in order to form a certain film layer (or called a thin film) on the surface of the wafer during the semiconductor atmospheric oxidation furnace tube process or the low-pressure chemical deposition furnace tube process, the participation of reaction gas is usually required. Since the fluidity and concentration of the reaction gas are related to other factors such as height, each batch of operations will inevitably leave a part of the reaction gas in the furnace tube reaction chamber, and this part of the residual reaction gas will participate in the next batch of semiconductor process reactions, that is, the next batch of processes will consume a certain amount of residual gas (or called residual special gas) in the furnace tube reaction chamber, and in the next operation process, there will also be the problem of the participation of reaction gas and the new trace reaction gas remaining in the reaction chamber after the operation. Therefore, the residual amount of special gas in the furnace tube reaction chamber is the result of the accumulation of residues from multiple batches of operations.

[0053] To address this issue, the present inventors proposed (the inventive concept of this invention): relying on the actual operation process and results of the furnace tube, a model was established to calculate the equivalent amount of residual special gas in the furnace tube reaction chamber (i.e., a formula for calculating the residual special gas equivalent). This model then estimates the impact of the residual special gas on the film thickness of the upcoming operation batch. By adjusting parameters such as the operation time, operation temperature, and special gas flow rate of the batch, the target film thickness or element doping concentration in the film can be achieved.

[0054] Specifically, before each execution of the next batch of atmospheric pressure oxidation furnace tube process or low-pressure chemical deposition furnace tube process, it is necessary to first calculate the total residual amount of reaction gas remaining in the furnace tube reaction chamber of all batches before the process menu batch operation. To calculate the total residual amount of reaction gas, it is necessary to first calculate the residual amount of reaction gas remaining in each process menu operation in actual conditions before the execution of the subsequent nth operation batch.

[0055] As a preferred example, the present invention provides a preset special gas residual equivalent calculation formula specifically for calculating the residual amount of reaction gas remaining in each process menu operation executed by the furnace tube before the subsequent n-th batch operation is executed:

[0056] Q n =Q i *(M i ) n-1

[0057] where Q n is the residual amount of the reaction gas remaining after performing the operations for each process menu before the execution of the subsequent nth job batch, and Q i is the initial residual amount of the reaction gas generated by performing the operations for each process menu; M is the residual coefficient of the reaction gas after each batch of operations for this process menu; the value range of M is: 0 < M ≤ 1, and the value range of n is: 1 < n < 10000.

[0058] It can be understood that since the reaction gases used in each batch of operations are different and parameters such as the reaction temperature are different, during the operations of different batches of different process types (which can also be called process menus), the influence of the residual gas generated by the previous batch of operations on the subsequent batch of operations must also be different, specifically as shown in Figure 3 the film thickness (abbreviation for thin film thickness) trend graph of products of a certain process type in different batches after the DCE (residual reaction gas) reaction operation, and the simulated influence curve of the residual amount of the reaction gas calculated with M = 0.67 and Q = 0.67 on the subsequent batches.

[0059] Step S202, accumulate the residual amounts of the reaction gases generated by the previous n batches of operations previously performed in the furnace tube to obtain the total residual amount of the reaction gas in the reaction chamber of the furnace tube.

[0060] In this embodiment, after calculating the residual amount of the reaction gas remaining after performing each process menu operation before the execution of the subsequent nth job batch using the above step S201, the total residual amount of the reaction gas in the reaction chamber of the furnace tube can be obtained by accumulation. After calculating the actual current total residual amount of the reaction gas in the reaction chamber of the furnace tube, the influence value of the residual special gas on the film thickness of the upcoming job batch can be estimated using this parameter value (the current total residual amount of the reaction gas). By adjusting parameters such as the operation time, operation temperature, and special gas flow rate of this batch, the purpose of achieving the target thickness of the film thickness of the job batch or the target concentration of the element doping in the thin film can be achieved.

[0061] As a preferred example, according to the calculation formula provided in the above step S201 for calculating the residual amount of the reaction gas remaining after performing each process menu operation before the execution of the subsequent nth job batch, it can be known that the calculation formula for the total residual amount of the reaction gas in the reaction chamber of the furnace tube can be specifically the following formula:

[0062] Q total = Q1 + Q2 + Q3 +... + Q n = Q1*(M1) 1-1 + Q2*(M2) 2-1 + Q3*(M3)3-1 +...+Q n *(M n ) n-1

[0063] =Q1+Q2*M2+Q3*(M3) 2 +...+Q n *(M n ) n-1

[0064] Among them, Q1, Q2, Q3, ..., Q n is the initial residual amount of reaction gas in the process menu corresponding to the 1st, 2nd, 3rd, ..nth batch, M1, M2, M3, ..., M n It is the residual coefficient of the reaction gas in the process menu corresponding to the 1st, 2nd, 3rd, ..nth batch operation.

[0065] In addition, based on the above-mentioned method for determining the residual amount of reaction gas in the reaction chamber, the present invention also provides a method as follows: Figure 4 The method for automatically controlling the film thickness and the element doping concentration in the film is shown, wherein: Figure 4 The following is a flow chart of a method for automatically controlling the thickness of a film and the doping concentration of an element in the film provided in one embodiment of the present invention. Specifically, the method for automatically controlling the thickness of a film and the doping concentration of an element in the film may include the following steps:

[0066] Step S401 , determining the process type and operation batch to be performed on the furnace tube, and calculating the total residual amount of the reaction gas in the reaction chamber of the furnace tube before the current process based on the process type, operation batch and the method for determining the residual amount of the reaction gas in the reaction chamber as described above.

[0067] Step S402, based on the total residual amount of reaction gas in the furnace tube reaction chamber before the current process, set the process compensation parameters corresponding to the current process and execute the current process, so as to automatically eliminate the influence of the residual reaction gas in the furnace tube reaction chamber on the thickness of the film formed in the current process and the element doping concentration in the film while depositing the target film.

[0068] The process compensation parameters include at least one of: compensation operating time, compensation operating temperature, and compensation residual gas flow rate. Preferably, in an embodiment of the present invention, the process compensation parameters specifically include compensation operating time, compensation operating temperature, and compensation residual gas flow rate. The furnace tube may specifically include three air inlets and five temperature control ends.

[0069] In this embodiment, using Figure 2The method for determining the residual amount of reaction gas in the reaction chamber shown in the figure calculates the total residual amount of reaction gas in the furnace tube reaction chamber before the current process. Then, based on the originally designed operation time, operation temperature and residual gas flow rate of the current process, the following formula provided by the present invention can be used to calculate the compensation operation time, compensation operation temperature and compensation residual gas flow rate corresponding to each process type.

[0070] Specifically, the calculation formula for the compensation operation time is as follows:

[0071] Δtime=Ctime*Q total

[0072] Among them, Δtime is the compensation operation time, Ctime is the time compensation coefficient originally set in the process menu corresponding to this operation, which can be obtained through the linear relationship between the total residual amount of reaction gas and the film thickness in the actual operation, Q total It is the total residual amount of reaction gas in the furnace tube reaction chamber before this operation.

[0073] Furthermore, the calculation formula for the compensation operating temperature is as follows:

[0074] ΔTemp1=Ctemp1*Q total

[0075] ΔTemp2=Ctemp2*Q total

[0076] ΔTemp3=Ctemp3*Q total

[0077] ΔTemp4=Ctemp4*Q total

[0078] ΔTemp5=Ctemp5*Q total

[0079] Among them, ΔTemp1~ΔTemp5 are the five compensation operating temperatures corresponding to the five temperature control ends, and Ctemp1~Ctemp5 are the five temperature compensation coefficients corresponding to the five temperature control ends, which can be obtained through the linear relationship between the total residual amount of the reaction gas and the film thickness in actual operation, Q total It is the total residual amount of reaction gas in the furnace tube reaction chamber before this operation.

[0080] Furthermore, the calculation formula for compensating the residual gas flow is as follows:

[0081] ΔCmfc1=Cmfc1*Q total

[0082] ΔCmfc2=Cmfc2*Qtotal

[0083] ΔCmfc3=Cmfc3*Q total

[0084] Among them, ΔCmfc1~ΔCmfc3 are the three compensation operating temperatures corresponding to the three air inlets, and Cmfc1~Cmfc2 are the three gas flow compensation coefficients corresponding to the three air inlets, which can be obtained through the linear relationship between the total residual amount of the reaction gas and the film thickness in actual operation. total It is the total residual amount of reaction gas in the furnace tube reaction chamber before this operation.

[0085] From this, it can be seen that in the present invention, an automatic furnace tube control system can be established to set the relevant parameters of the special gas residual amount (residual gas residual amount) of each process menu (process type), that is, the operation time, temperature, special gas flow rate compensation coefficient and the benchmark operation time, temperature, special gas flow rate. When the product is dispatched, the actual operation time, temperature, special gas flow rate are determined according to the process menu (process type) selected for the operation, the special gas equivalent in the reaction chamber, and the compensation coefficient of the process menu, and assigned to the machine to execute the operation of the corresponding process menu. After the operation is completed, the current special gas residual equivalent will be calculated based on the records of the current and historical operation batches and the initial residual amount of special gases of different process menus, the residual coefficient of special gases, etc.

[0086] In summary, the present invention provides a method for automatically controlling film thickness and element doping concentration within the film. Specifically, the method first uses the calculation formula provided by the present invention to calculate the total residual amount of reaction gas remaining in at least one batch of operations performed before a certain furnace tube reaction, that is, the actual residual amount of reaction gas currently present in the furnace tube reaction chamber, and then designs (sets) the process compensation parameters required for this process based on the actual situation, and then automatically eliminates the influence of the residual reaction gas in the furnace tube reaction chamber on the film thickness and element doping concentration within the film formed in this process while depositing and forming the target film (or film layer) in the furnace tube reaction chamber.

[0087] In addition, an embodiment of the present invention further provides an electronic device, including a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other via the communication bus.

[0088] Memory for storing computer programs;

[0089] The processor is configured to, when executing the program stored in the memory, implement the method steps for determining the residual amount of reaction gas in the reaction chamber provided in the embodiments of the present invention, or the method steps for automatically controlling the thickness of a film and the doping concentration of elements in the film, wherein the method for determining the residual amount of reaction gas in the reaction chamber specifically includes the following steps:

[0090] For each process menu operation executed by the furnace tube, determine the initial residual amount of the reaction gas generated after each process menu operation is executed, and calculate the residual amount of the reaction gas remaining in each process menu operation before the subsequent n-th operation batch is executed based on the preset special gas residual equivalent calculation formula;

[0091] The residual amounts of reaction gas generated by the first n batches of operations previously executed in the furnace tube are accumulated to obtain the total residual amount of reaction gas in the reaction chamber of the furnace tube.

[0092] In addition, other implementation methods of the method steps for determining the residual amount of reaction gas in a reaction chamber or the method steps for automatically controlling the thickness of a film and the doping concentration of elements in the film, which are implemented by the processor executing a program stored in the memory, are the same as the implementation methods mentioned in the aforementioned method embodiment section and will not be repeated here.

[0093] The communication bus mentioned in the control terminal can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus. This communication bus can be divided into an address bus, a data bus, a control bus, etc. For ease of illustration, the figure shows only one thick line, but this does not mean that there is only one bus or only one type of bus.

[0094] The communication interface is used for communication between the above electronic device and other devices.

[0095] The memory may include random access memory (RAM) or non-volatile memory (NVM), such as at least one disk storage. Alternatively, the memory may be at least one storage device located away from the processor.

[0096] The above-mentioned processor can be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, and discrete hardware components.

[0097] In another embodiment provided by the present invention, a computer-readable storage medium is also provided, which stores instructions. When the computer-readable storage medium is run on a computer, it enables the computer to execute the method for determining the residual amount of reaction gas in the reaction chamber or the method for automatically controlling the film thickness and the element doping concentration in the film as described in any of the above embodiments.

[0098] In the above embodiments, all or part of the embodiments can be implemented by software, hardware, firmware, or any combination thereof. When implemented using software, all or part of the embodiments can be implemented in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, all or part of the processes or functions described in the embodiments of the present invention are generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via a wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) method. The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or data center that includes one or more available media. The available medium can be a magnetic medium (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid-state drive (SSD)).

[0099] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0100] Each embodiment in this specification is described in a related manner. Similar portions between the various embodiments can be referenced to each other. Each embodiment focuses on the differences between the other embodiments. In particular, the device, electronic device, and computer-readable storage medium embodiments are generally similar to the method embodiments, so their descriptions are relatively simple. For related portions, reference can be made to the descriptions of the method embodiments.

[0101] The above description is only a preferred embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the scope of protection of the present invention.

Claims

1. A method for determining the residual amount of reaction gas in a reaction chamber, characterized in that: Applicable to semiconductor atmospheric pressure oxidation furnace tube process or low pressure chemical deposition furnace tube process, the determination method comprises at least the following steps: For each process menu operation executed by the furnace tube, determine the initial residual amount of the reaction gas generated after each process menu operation is executed, and calculate the residual amount of the reaction gas remaining in each process menu operation before the subsequent n-th operation batch is executed based on the preset special gas residual equivalent calculation formula; Accumulating the residual amounts of reaction gas generated by the first n batches of operations previously executed in the furnace tube to obtain a total residual amount of reaction gas in the reaction chamber of the furnace tube; The preset special gas residual equivalent calculation formula for calculating the residual amount of reaction gas before the subsequent n-th batch operation is executed for each process menu executed by the furnace tube is: Q n =Q i *(M i ) n-1 Among them, Q n is the residual amount of the reaction gas remaining after performing the operations for each process menu before the subsequent nth job batch is executed. Q i is the initial residual amount of the reaction gas generated by performing the operations for each process menu; M is the residual coefficient of the reaction gas after each batch of operations for this process menu; the value range of M is: 0 < M ≤ 1, and the value range of n is: 1 < n < 10000.

2. The method for determining the residual amount of reaction gas in the reaction chamber according to claim 1, wherein: The calculation formula for the total residual amount of reaction gas in the furnace tube reaction chamber is: <h2 style=";text-align:left;direction:ltr">Q<h2 style=";text-align:left;direction:ltr"> total <h2 style=";text-align:left;direction:ltr"> =Q1+Q2+Q3+...+Q<h2 style=";text-align:left;direction:ltr"> n <h2 style=";text-align:left;direction:ltr"> =Q1*(M1)<h2 style=";text-align:left;direction:ltr"> 1-1 <h2 style=";text-align:left;direction:ltr"> +Q2*(M2)<h2 style=";text-align:left;direction:ltr"> 2-1 <h2 style=";text-align:left;direction:ltr"> +Q3*(M3)<h2 style=";text-align:left;direction:ltr"> 3-1 <h2 style=";text-align:left;direction:ltr"> +...+Q<h2 style=";text-align:left;direction:ltr"> n <h2 style=";text-align:left;direction:ltr"> *(M<h2 style=";text-align:left;direction:ltr"> n <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> n-1 <h2 style=";text-align:left;direction:ltr">=Q1+Q2*M2+Q3*(M3)<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> +...+Q<h2 style=";text-align:left;direction:ltr"> n <h2 style=";text-align:left;direction:ltr"> *(M<h2 style=";text-align:left;direction:ltr"> n <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> n-1 Among them, Q1, Q2, Q3, ..., Q n is the initial residual amount of reaction gas in the process menu corresponding to the 1st, 2nd, 3rd, ..nth batch, M1, M2, M3, ..., M n It is the residual coefficient of the reaction gas in the process menu corresponding to the 1st, 2nd, 3rd, ..nth batch operation.

3. A method for automatically controlling film thickness and element doping concentration within the film, characterized in that: Applicable to semiconductor atmospheric pressure oxidation furnace tube process or low pressure chemical deposition furnace tube process, the method for automatically controlling the thickness of the deposited film and the concentration of element doping in the film comprises at least the following steps: Determine the type of process menu and operation batch to be performed on the furnace tube, and calculate the total residual amount of reaction gas in the reaction chamber of the furnace tube before the current process based on the type of process menu, operation batch and the method for determining the residual amount of reaction gas in the reaction chamber according to any one of claims 1 to 2; Based on the total residual amount of reaction gas in the furnace tube reaction chamber before the current process, the process compensation parameters corresponding to the current process are set and the current process is executed, so as to automatically eliminate the influence of the residual reaction gas in the furnace tube reaction chamber on the thickness of the film formed in the current process and the element doping concentration in the film while depositing the target film.

4. The method for automatically controlling the film thickness and the element doping concentration in the film according to claim 3, wherein: The process compensation parameter includes at least one of a compensation operation time, a compensation operation temperature, and a compensation residual gas flow rate.

5. The method for automatically controlling the film thickness and the element doping concentration in the film according to claim 4, wherein: The furnace tube includes three air inlets and five temperature control ends.

6. The method for automatically controlling the film thickness and the element doping concentration in the film according to claim 5, wherein: The calculation formula for the compensatory operation time is as follows: Δtime=Ctime*Q total Among them, Δtime is the compensation operation time, Ctime is the time compensation coefficient originally set in the process menu corresponding to this operation, Q total It is the total residual amount of reaction gas in the furnace tube reaction chamber before this operation.

7. The method for automatically controlling the film thickness and the element doping concentration in the film according to claim 5, wherein: The calculation formula for the compensation operating temperature is as follows: ΔTemp1=Ctemp1*Q total ΔTemp2=Ctemp2*Q total ΔTemp3=Ctemp3*Q total ΔTemp4=Ctemp4*Q total ΔTemp5=Ctemp5*Q total Among them, ΔTemp1~ΔTemp5 are the 5 compensation operating temperatures corresponding to the 5 temperature control ends respectively, Ctemp1~Ctemp5 are the 5 temperature compensation coefficients corresponding to the 5 temperature control ends respectively, Q total It is the total residual amount of reaction gas in the furnace tube reaction chamber before this operation.

8. The method for automatically controlling film thickness and element doping concentration in a film according to claim 5, wherein: The calculation formula for compensating the residual gas flow is as follows: ΔCmfc1=Cmfc1*Q total ΔCmfc2=Cmfc2*Q total ΔCmfc3=Cmfc3*Q total Among them, ΔCmfc1~ΔCmfc3 are the three compensation operating temperatures corresponding to the three air inlets, Cmfc1~Cmfc2 are the three gas flow compensation coefficients corresponding to the three air inlets, Q total It is the total residual amount of reaction gas in the furnace tube reaction chamber before this operation.

9. An electronic device, characterized in that: It includes a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory communicate with each other via the communication bus; Memory for storing computer programs; The processor is configured to implement the method steps for determining the residual amount of reaction gas in the reaction chamber as described in any one of claims 1 to 2, or the method steps for automatically controlling the thickness of a thin film and the doping concentration of elements in the thin film as described in any one of claims 3 to 8 when executing the program stored in the memory.

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