Semiconductor defect repair apparatus and method

Abstract

The present application provides a semiconductor defect repairing device and method, which passes reaction gas into a first cavity with specific temperature and specific pressure, so that the semiconductor element in the first cavity can perform defect repairing process in a lower temperature environment, and the second cavity is arranged to avoid the reaction gas from leaking to the environment.

Description

Technical Field

[0001] This invention relates to a semiconductor defect repair apparatus and method, and more particularly to a semiconductor defect repair apparatus and method under high voltage. Background Technology

[0002] In the semiconductor chip manufacturing process, wafer defects have always been a significant factor affecting product yield. Firstly, as integrated circuit dimensions shrink, processes such as film deposition, etching, and cleaning can introduce defects into the semiconductor's internal structure and / or surface, making wafer defects a critical issue. Secondly, with the development of 5G and electric vehicles, the demand for new optoelectronic components, power devices, and communication RF components has increased dramatically, driving the application of wide-bandgap semiconductor materials (such as SiC, GaN, and GaAs). However, wide-bandgap semiconductor devices are prone to defects during epitaxy and processing, leading to reduced device performance and decreased reliability.

[0003] The existing conventional method for repairing semiconductor defects involves annealing the semiconductor material in the front-end of the process by introducing hydrogen gas into a high-temperature furnace tube at a temperature greater than 800°C. However, if a wafer with a metal layer deposited on it is to be annealed, the temperature above 800°C may melt the metal. Therefore, only a temperature of about 400°C can be used for annealing, and the repair effect is far inferior to that under high-temperature conditions.

[0004] In view of this, there is an urgent need to provide a device and method for semiconductor defect repair to replace the existing conventional high-temperature furnace tube annealing method, and to achieve effective defect repair at low temperature. Summary of the Invention

[0005] One aspect of the present invention is to provide a semiconductor defect repair device, which forms a first cavity for accommodating semiconductor elements and a second cavity for preventing gas leakage by means of the configuration of gate components.

[0006] Another aspect of the present invention is to provide a method for repairing semiconductor defects, which involves placing a semiconductor device in the semiconductor defect repair apparatus of the above-described aspect and setting the environment of the first chamber to supercritical pressure and temperature of the reaction gas to perform a defect repair process on the semiconductor device.

[0007] According to one aspect of the present invention, a semiconductor defect repair apparatus is provided, comprising a cavity housing, a gate member, a first inlet pipe, and a first vent pipe. The cavity housing has an opening and a plurality of heating devices. The gate member is disposed at the aforementioned opening. The gate member comprises a body, a first flange connected to the top of the body, at least one first seal disposed on the top surface of the first flange, a second flange connected to the side of the body and lower than the first flange, and at least one second seal disposed on the top surface of the second flange. The outer surface of the first flange overlaps with the inner surface of the cavity housing, and the outer surface of the second flange also overlaps with the inner surface of the cavity housing.

[0008] The aforementioned body, first flange, and cavity shell form a first cavity, which is configured to accommodate at least one semiconductor element. The body, second flange, first flange, and cavity shell form a second cavity. In the projection direction parallel to the second flange, the aforementioned heating device does not overlap with the second cavity. A first inlet pipe is connected to the first cavity and configured to introduce reactive gas into the first cavity. A first vent pipe is connected to the first cavity and configured to release gas components and / or reactive gas from the first cavity.

[0009] According to one embodiment of the present invention, the gate component further includes at least one third seal disposed on the bottom surface of the first flange.

[0010] According to an embodiment of the present invention, the semiconductor defect repair apparatus further includes a second inlet pipe, a second vent pipe, and a first gas detection port, each connected to a second cavity. The second inlet pipe is configured to introduce non-flammable gas into the second cavity. The second vent pipe is configured to release gas components from the second cavity. The first gas detection port is configured to detect reactive gases.

[0011] According to one embodiment of the present invention, the semiconductor defect repair apparatus further includes an outer cover disposed outside the cavity housing and the gate component. The outer cover has a conical top.

[0012] According to one embodiment of the present invention, the outer casing further includes a third vent pipe and a second gas detection port respectively connected to the conical top of the outer casing. The second gas detection port is configured to detect reactive gases.

[0013] According to one embodiment of the present invention, the pressure and temperature of the first cavity are the supercritical pressure and supercritical temperature of the reaction gas, respectively.

[0014] According to one embodiment of the present invention, the semiconductor device comprises a wafer. The wafer includes a semiconductor layer or an insulating layer and / or is a wafer processed by an ion implantation process.

[0015] According to an embodiment of the present invention, the semiconductor element includes at least one defect, and the defect includes at least one of interface trap, dislocation, and dangling bond.

[0016] According to one embodiment of the present invention, the heating device is disposed in the housing of the cavity shell.

[0017] According to another aspect of the present invention, a method for repairing semiconductor defects is provided, which includes providing a semiconductor defect repair apparatus. The semiconductor defect repair apparatus includes a cavity housing, a gate member, a first inlet pipe, and a first vent pipe. The cavity housing has an opening and a heating device. The gate member is disposed at the aforementioned opening. The gate member includes a body, a first flange connected to the top of the body, at least one first seal disposed on the top surface of the first flange, a second flange connected to the side of the body and lower than the first flange, and at least one second seal disposed on the top surface of the second flange. The outer surface of the first flange overlaps with the inner surface of the cavity housing, and the outer surface of the second flange also overlaps with the inner surface of the cavity housing. The aforementioned body, first flange, and cavity housing form a first cavity. The body, second flange, first flange, and cavity housing form a second cavity. In the projection direction parallel to the second flange, the aforementioned heating device does not overlap the second cavity. The first inlet pipe is connected to the first cavity and configured to introduce a reaction gas into the first cavity. The first vent pipe is connected to the first cavity and is configured to release the gas inside the first cavity.

[0018] The method further includes placing at least one semiconductor element into a first cavity. The at least one semiconductor element has at least one defect. Next, a first pressure and a first temperature in the first cavity are set to the supercritical pressure and supercritical temperature of the reaction gas, respectively. The method further includes introducing a non-flammable gas into a second cavity. Then, the reaction gas is introduced into the first cavity through a first inlet pipe to perform a defect repair process on the semiconductor element.

[0019] According to one embodiment of the present invention, the heating device is disposed in the housing of the cavity shell.

[0020] According to an embodiment of the present invention, the semiconductor defect repair device further includes at least one third seal disposed on the bottom surface of the first flange.

[0021] According to one embodiment of the present invention, the reactant gas is selected from hydrogen, hydrogen isotopes, compounds containing hydrogen isotopes, oxygen (O2), nitrogen (N2), nitric oxide (NO), nitrogen dioxide (NO2), nitrous oxide (N2O), carbon dioxide (CO2), carbon monoxide (CO), sulfur dioxide (SO2), nitrogen trifluoride (NF3), carbon tetrafluoride (CF4), tungsten fluoride (WF6), fluorine (F2), carbonyl fluoride (COF2), and chlorine trifluoride (Cl). A group consisting of xenon difluoride (XeF2), molybdenum fluoride (MoF6), tellurium hexafluoride (TeF6), phosphorus trifluoride (PF3), phosphorus pentafluoride (PF5), arsenic trifluoride (AsF3), arsenic pentafluoride (AsF5), hexafluoroethane (C2F6), octafluoropropane (C3F8), hexafluorobutadiene (C4F6), octafluorocyclobutane (C4F8), octafluorocyclopentene (C5F8), silicon tetrafluoride (SiF4), boron trifluoride (BF3), germanium tetrafluoride (GeF4), chlorotrifluoromethane (CClF3), and chloropentafluoroethane (C2ClF5).

[0022] According to one embodiment of the present invention, the first pressure is 10 atm to 300 atm, and the first temperature is below 850°C.

[0023] According to one embodiment of the present invention, the non-flammable gas comprises nitrogen, carbon dioxide and / or an inert gas.

[0024] According to one embodiment of the present invention, the second cavity has a second pressure. The second pressure is greater than the first pressure of the first cavity.

[0025] According to one embodiment of the present invention, the semiconductor device comprises a wafer. The wafer includes a semiconductor layer or an insulating layer and / or is a wafer processed by an ion implantation process.

[0026] According to an embodiment of the present invention, the above-mentioned defects include at least one of interface traps, differential packing, and dangling keys.

[0027] The semiconductor defect repair apparatus and method of the present invention allow semiconductor devices to be repaired at a lower temperature through a supercritical fluid-state reaction gas in a first chamber, and prevents the reaction gas from leaking into the environment through the setting of a second chamber. Attached Figure Description

[0028] A better understanding of the features disclosed herein will be achieved by reading the following detailed description in conjunction with the accompanying drawings. It should be noted that, as is standard practice in the industry, many features are not drawn to scale. In fact, for clarity of discussion, the dimensions of many features may be arbitrarily scaled.

[0029] Figure 1A and Figure 1B This is a cross-sectional schematic diagram illustrating a semiconductor defect repair apparatus according to some embodiments of the present invention.

[0030] Figure 2 This is a cross-sectional schematic diagram illustrating a semiconductor defect repair apparatus according to some embodiments of the present invention.

[0031] Figure 3 This is a flowchart illustrating a semiconductor defect repair method according to some embodiments of the present invention.

[0032] [Explanation of Key Component Symbols]

[0033] 100, 100B, 200: Semiconductor defect repair device; 110: Cavity housing

[0034] 112: Opening; 114: Heating device

[0035] 116: Housing; 120: Gate component

[0036] 122: Body 124: First flange

[0037] 126: Second flange; 130: First cavity

[0038] 132: Semiconductor element; 135: First seal.

[0039] 140: Second cavity; 145: Second seal

[0040] 150: First intake pipe; 160: First vent pipe

[0041] 210: Outer casing; 220: Gas detection port

[0042] 230: Third vent pipe; 245: Third seal.

[0043] 300: Methods 310, 320, 330, 340, 350: Operations

[0044] X: Direction Detailed Implementation

[0045] The following disclosure provides numerous different embodiments or illustrations to implement various features of the invention. The specific examples of components and configurations described below are for the purpose of simplifying this disclosure. These are, of course, merely illustrative and are not intended to be limiting. For example, a description of a first feature formed on or above a second feature includes embodiments where the first and second features are in direct contact, as well as embodiments where other features are formed between the first and second features such that the first and second features are not in direct contact. Furthermore, element symbols and / or letters are repeated in various specific examples in this disclosure. This repetition is for the purpose of simplifying and clarifying the description and does not imply a relationship between the various discussed embodiments and / or configurations.

[0046] Furthermore, spatially relative terms, such as "beneath," "below," "lower," "above," and "upper," are used to facilitate the description of the relationship between a part or feature depicted in the accompanying drawings and other parts or features. In addition to the directions depicted in the drawings, spatially relative terms also include different orientations of the elements during use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used in this disclosure can also be interpreted in this way.

[0047] As used in this disclosure, “around,” “about,” “approximately,” or “substantively” generally mean within 20 percent, 10 percent, or 5 percent of the stated value or range.

[0048] As described above, the present invention provides an apparatus and method for semiconductor defect repair, which involves introducing a reaction gas into a first chamber having a supercritical temperature and supercritical pressure, so that the semiconductor device can be repaired at a lower temperature. The design of the second chamber is used to prevent leakage of the reaction gas.

[0049] Please see Figure 1A This is a cross-sectional schematic diagram illustrating a semiconductor defect repair apparatus 100 according to some embodiments of the present invention. The semiconductor defect repair apparatus 100 includes a cavity housing 110. The cavity housing 110 includes an opening 112 and a plurality of heating devices 114. The heating devices 114 are disposed within a housing 116 of the cavity housing 110. In some embodiments, the heating devices 114 are disposed within holes in the housing 116 to make subsequent heating more stable and uniform; therefore, the thickness of the housing 116 needs to be adjusted according to the size of the heating devices 114.

[0050] The semiconductor defect repair apparatus 100 further includes a gate member 120. The gate member 120 is disposed at the opening 112. According to some embodiments, the gate member 120 includes a body 122, a first flange 124, a second flange 126, a first seal 135, and a second seal 145. The first flange 124 connects to the top of the body 122. It should be understood that the top of the body 122 is near the opening 112 of the cavity housing 110. The outer surface of the first flange 124 overlaps with the inner surface of the cavity housing 110. The second flange 126 connects to the side of the body 122, and the second flange 126 is lower than the first flange 124. The outer surface of the second flange 126 also overlaps with the inner surface of the cavity housing 110.

[0051] The space enclosed by the body 122, the first flange 124, and the cavity housing 110 of the gate component 120 is a first cavity 130. In some embodiments, the first cavity 130 is used to accommodate at least one semiconductor element 132, such as a semiconductor substrate, a wafer, and / or a semiconductor device. In one specific example, the semiconductor element 132 comprises a wafer having a semiconductor layer or an insulating layer thereon, or a wafer that has undergone an ion implantation process. In some embodiments, the first cavity 130 is a chamber used to repair defects in the defective semiconductor element 132. In one specific example, the aforementioned defects may be interface traps in heterogeneous interfaces, dislocations generated during film deposition or etching, or dangling bonds in molecular / atomic bonds.

[0052] In some embodiments, the pressure and temperature of the first cavity 130 are the supercritical pressure and supercritical temperature of the introduced reaction gas, respectively. In some embodiments, the temperature of the first cavity 130 is increased by the heating device 114 described above. A first seal 135 is disposed on the top surface of the first flange 124 to seal the first cavity 130. In some embodiments, the number of first seals 135 is at least one, and the number may be changed according to the design of the device; the present invention is not limited thereto.

[0053] The semiconductor defect repair apparatus 100 further includes a first inlet pipe 150 and a first vent pipe 160 respectively connected to a first cavity 130. The first inlet pipe 150 is configured to introduce reactive gas into the first cavity 130, while the first vent pipe 160 is configured to release gas components and / or reactive gas from the first cavity 130. Figure 1A The connection between the first air inlet pipe 150 and the first air outlet pipe 160 and the first cavity 130 shown is only one example, and the present invention does not limit the connection position and connection method.

[0054] The space enclosed by the body 122, first flange 124, second flange 126, and cavity housing 110 of the gate component 120 is the second cavity 140. It should be understood that the second cavity 140 surrounds the outer side of the body 122 of the gate component 120. The second cavity 140 is configured to prevent the reactant gas in the first cavity 130 from directly leaking into the environment. In some embodiments, the first cavity 130 and the second cavity 140 are within the same cavity housing 110, thus allowing for faster detection of whether reactant gas is leaking from the first cavity 130. Since the second cavity 140 does not need to be heated to a specific temperature, the heating device 114 does not extend into the second cavity 140; in other words, the heating device 114 does not overlap the second cavity 140 in the direction X parallel to the second flange 126.

[0055] The second seal 145 is disposed on the top surface of the second flange 126 to seal the second cavity 140. In some embodiments, the number of second seals 145 is at least one, and the number may be varied depending on the design of the device; the invention is not limited thereto. Please refer to... Figure 2 This is a cross-sectional schematic diagram illustrating a semiconductor defect repair apparatus 200 according to other embodiments of the present invention. In some embodiments, the gate member 120 may optionally include a third seal member 245 to enhance the sealing of the second cavity 140 and prevent gas in the second cavity 140 from seeping into the first cavity 130.

[0056] In some embodiments, the semiconductor defect repair device 100 may selectively include a second inlet pipe, a second vent pipe, and a gas detection port (not shown) respectively connected to a second cavity 140. The second inlet pipe is configured to introduce non-flammable gas into the second cavity 140; the second vent pipe is configured to release gas components within the second cavity 140; and the gas detection port is configured to detect reactive gas within the first cavity 130. If the gas detection port detects reactive gas, the device can be immediately shut off to prevent further leakage of reactive gas. The second cavity 140 is supplied with non-flammable gas, and the pressure within the second cavity 140 is made greater than the pressure within the first cavity 130, thus the first cavity 130 is under negative pressure, making it difficult for reactive gas within it to leak out.

[0057] Please see Figure 1B This is a cross-sectional schematic diagram illustrating a semiconductor defect repair apparatus 100B according to some embodiments of the present invention. The semiconductor defect repair apparatus 100B is similar to the semiconductor defect repair apparatus 100, except that the heating device 114 is disposed within the first cavity 130 to improve subsequent heating efficiency.

[0058] Please refer to the previous document. Figure 2In some embodiments, the semiconductor defect repair apparatus 200 may optionally include an outer casing 210 disposed outside the cavity housing 110 and the gate member 120 to further reduce the risk of reaction gas leakage into the environment. In one specific example, the outer casing 210 has a conical top. In some embodiments, the outer casing 210 further includes a third vent pipe 230 and a gas detection port 220 respectively connected to the outer casing 210. Generally, the reaction gas used in semiconductor defect repair processes is typically hydrogen. Since hydrogen is a gas lighter than air, the third vent pipe 230 and the gas detection port 220 are preferably connected to the conical top of the outer casing 210. In some embodiments, the space between the outer casing 210 and the cavity housing 110 is under normal environmental conditions, i.e., room temperature and room pressure.

[0059] Figure 3 This is a flowchart illustrating a semiconductor defect repair method 300 according to some embodiments of the present invention. First, operation 310 is performed, providing a semiconductor defect repair apparatus 100 (or a semiconductor defect repair apparatus 200). Please also refer to... Figure 1A (or Figure 1B or Figure 2 )and Figure 3 Next, operation 320 is performed to place at least one semiconductor element 132 into the first cavity 130. In some embodiments, the semiconductor element 132 has internal or surface defects. In one example, the semiconductor element 132 includes a semiconductor substrate, a wafer, and / or a semiconductor device. In a specific example, the semiconductor element 132 includes a wafer having a semiconductor layer or an insulating layer thereon, or a wafer that has undergone an ion-implantation process. In one embodiment, the aforementioned defects may be interface traps in heterogeneous interfaces, misalignments / dislocations generated during film deposition or etching, or dangling bonds in molecular / atomic bonds.

[0060] Then, operation 330 is performed to bring the pressure and temperature of the first chamber 130 to the supercritical pressure and supercritical temperature of the reaction gas to be subsequently introduced. In some embodiments, the pressure of the first chamber 130 is 10 atm to 300 atm. In some embodiments, the temperature of the first chamber 130 is below 850°C, preferably 25°C to 800°C, and more preferably 200°C to 400°C. Compared to conventional methods that utilize furnace tubes and employ low-pressure (e.g., less than 1 atm) and high-temperature (greater than 800°C) annealing, the high temperatures of conventional methods can damage parts of the structure of specific semiconductor elements. Therefore, the present invention uses a semiconductor defect repair device 100 (or semiconductor defect repair device 200) to repair semiconductor defects using higher pressure and lower temperature. The supercritical pressure within the first chamber 130 allows for a higher concentration of the subsequently introduced reaction gas, thus enabling the gas to diffuse into the semiconductor element 132 even at lower temperatures, and effectively increasing reactivity.

[0061] Next, operation 340 is performed, introducing a non-flammable gas into the second chamber 140. In some embodiments, the non-flammable gas includes nitrogen (N2), carbon dioxide (CO2), and / or an inert gas (such as argon (Ar)). In some embodiments, the pressure in the second chamber 140 is greater than the pressure in the first chamber 130. Since the reaction gas in the first chamber 130 may be a hazardous or toxic gas, the first chamber 130 needs to be under negative pressure to prevent leakage of the reaction gas from the first chamber 130.

[0062] Then, operation 350 is performed, introducing reaction gas from the first inlet pipe 150 into the first chamber 130 to perform a defect repair process for the semiconductor device. In some embodiments, the reaction gas includes hydrogen, hydrogen isotopes, compounds containing hydrogen isotopes, oxygen (O2), nitrogen (N2), nitric oxide (NO), nitrogen dioxide (NO2), nitrous oxide (N2O), carbon dioxide (CO2), carbon monoxide (CO), sulfur dioxide (SO2), nitrogen trifluoride (NF3), carbon tetrafluoride (CF4), tungsten fluoride (WF6), fluorine (F2), carbonyl fluoride (COF2), and chlorine trifluoride (Cl). The reaction gas includes xenon difluoride (XeF2), molybdenum fluoride (MoF6), tellurium hexafluoride (TeF6), phosphorus trifluoride (PF3), phosphorus pentafluoride (PF5), arsenic trifluoride (AsF3), arsenic pentafluoride (AsF5), hexafluoroethane (C2F6), octafluoropropane (C3F8), hexafluorobutadiene (C4F6), octafluorocyclobutane (C4F8), octafluorocyclopentene (C5F8), silicon tetrafluoride (SiF4), boron trifluoride (BF3), germanium tetrafluoride (GeF4), trifluorochloromethane (CClF3), and / or monochloropentafluoroethane (C2ClF5). The reaction gas is selected based on the semiconductor element 132. For example, if the semiconductor element 132 includes silicon, the reaction gas can be hydrogen, hydrogen isotopes, or compounds containing hydrogen isotopes, preferably hydrogen.

[0063] According to the above, the semiconductor defect repair apparatus and method provided by the present invention allows the semiconductor device in the first cavity to undergo defect repair at a lower temperature by introducing a reaction gas into a first cavity with a specific temperature and a specific pressure, and prevents the reaction gas from leaking into the environment by setting up a second cavity.

[0064] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.

Claims

1. A semiconductor defect repair apparatus, characterized by comprising: include: The outer shell of the cavity has an opening and multiple heating devices; A gate component, disposed in the opening, and the gate component comprising: ontology; A first flange is connected to the top of the body, and the outer surface of the first flange overlaps with the inner surface of the cavity shell, wherein the body, the first flange and the cavity shell form a first cavity, and the first cavity is configured to accommodate at least one semiconductor element. At least one first seal is disposed on the top surface of the first flange; The second flange connects to the side of the body and is lower than the first flange. The outer surface of the second flange overlaps with the inner surface of the cavity shell. The body, the second flange, the first flange, and the cavity shell form a second cavity, parallel to the projection direction of the second flange. The plurality of heating devices do not overlap the second cavity. At least one second seal is disposed on the top surface of the second flange; A first intake pipe is connected to the first cavity and configured to introduce reactant gas into the first cavity; and A first vent pipe is connected to the first cavity and configured to release the gaseous components and / or the reactive gas within the first cavity; wherein The protrusion direction is the direction in which the second flange is formed by protruding from a part of the body toward the cavity shell.

2. The semiconductor defect repair apparatus according to claim 1, wherein The gate component further includes: At least one third seal is disposed on the bottom surface of the first flange.

3. The semiconductor defect repair apparatus of claim 1, wherein It also includes: A second air inlet pipe is connected to the second cavity and configured to introduce non-flammable gas into the second cavity; A second vent pipe is connected to the second cavity and configured to release gas components within the second cavity; and A first gas detection port is connected to the second cavity and configured to detect the reactive gas.

4. The semiconductor defect repair apparatus according to claim 1 or 3, wherein It also includes: An outer cover is disposed outside the outer shell of the cavity and the gate component, wherein the outer cover has a conical top.

5. The semiconductor defect repair apparatus according to claim 4, wherein The outer cover further includes: The third vent pipe is connected to the conical top of the outer casing; and The second gas detection port is connected to the cone-shaped top of the outer casing and is configured to detect the reactive gas.

6. The semiconductor defect repair apparatus of claim 1, wherein The pressure and temperature of the first chamber are the supercritical pressure and supercritical temperature of the reacting gas, respectively.

7. The semiconductor defect repair apparatus of claim 1, wherein The at least one semiconductor element comprises a wafer, and the wafer includes a semiconductor layer or an insulating layer and / or the wafer has undergone an ion implantation process.

8. The semiconductor defect repair apparatus of claim 1, wherein The at least one semiconductor element includes at least one defect, and the defect includes at least one of interface traps, differential packing, and dangling bonds.

9. The semiconductor defect repair apparatus of claim 1, wherein The plurality of heating devices are disposed within the housing of the cavity shell.

10. A method of semiconductor defect repair, characterized by, Include: A semiconductor defect repair apparatus is provided, wherein the semiconductor defect repair apparatus comprises: The outer shell of the cavity has an opening and multiple heating devices; A gate component, disposed in the opening, and the gate component comprising: ontology; A first flange is connected to the top of the body, and the outer surface of the first flange overlaps with the inner surface of the cavity shell, wherein the body, the first flange and the cavity shell form a first cavity; At least one first seal is disposed on the top surface of the first flange; The second flange connects to the side of the body and is lower than the first flange. The outer surface of the second flange overlaps with the inner surface of the cavity shell. The body, the second flange, the first flange, and the cavity shell form a second cavity, parallel to the projection direction of the second flange. The plurality of heating devices do not overlap the second cavity. At least one second seal is disposed on the top surface of the second flange; A first air inlet pipe is connected to the first cavity and configured to introduce reaction gas into the first cavity; as well as A first vent pipe is connected to the first cavity and configured to release gas from the first cavity; At least one semiconductor element is placed into the first cavity, wherein the at least one semiconductor element has at least one defect; The first pressure and the first temperature of the first cavity are respectively the supercritical pressure and the supercritical temperature of the reactant gas. Introduce non-flammable gas into the second cavity; and The reactive gas is introduced into the first cavity through the first inlet pipe to perform the defect repair process of the at least one semiconductor device; wherein The protrusion direction is the direction in which the second flange is formed by protruding from a part of the body toward the cavity shell.

11. The method of semiconductor defect repair of claim 10, wherein, The plurality of heating devices are disposed within the housing of the cavity shell.

12. The method of semiconductor defect repair of claim 10, wherein, The semiconductor defect repair device further includes: At least one third seal is disposed on the bottom surface of the first flange.

13. The method of semiconductor defect repair of claim 10, wherein, The reacting gas is selected from a group consisting of hydrogen, hydrogen isotopes, compounds containing hydrogen isotopes, oxygen, nitrogen, nitric oxide, nitrogen dioxide, nitrous oxide, carbon dioxide, carbon monoxide, sulfur dioxide, nitrogen trifluoride, carbon tetrafluoride, tungsten fluoride, fluorine, carbonyl fluoride, chlorine trifluoride, xenon difluoride, molybdenum fluoride, tellurium hexafluoride, phosphorus trifluoride, phosphorus pentafluoride, arsenic trifluoride, arsenic pentafluoride, hexafluoroethane, octafluoropropane, hexafluorobutadiene, octafluorocyclobutane, octafluorocyclopentene, silicon tetrafluoride, boron trifluoride, germanium tetrafluoride, chlorotrifluoromethane, and chloropentafluoroethane.

14. The method of semiconductor defect repair of claim 10, wherein, The first pressure is 10 atm to 300 atm, and the first temperature is below 850°C.

15. The method of semiconductor defect repair of claim 10, wherein, The non-flammable gas contains nitrogen, carbon dioxide and / or inert gases.

16. The method of semiconductor defect repair of claim 10, wherein, The second cavity has a second pressure, and the second pressure is greater than the first pressure of the first cavity.

17. The method for repairing semiconductor defects according to claim 10, characterized in that, The at least one semiconductor element comprises a wafer, and the wafer includes a semiconductor layer or an insulating layer and / or the wafer has undergone an ion implantation process.

18. The method of semiconductor defect repair of claim 10, wherein, The at least one defect includes at least one of interface traps, differential arrays, and dangling keys.

Images