Deposition machine

Abstract

The present invention is a deposition machine, comprising a chamber, a carrier plate, an exhaust ring and a diffusion unit, wherein the carrier plate is located in a accommodating space of the chamber. The chamber comprises an exhaust channel arranged around the periphery of the accommodating space, wherein the exhaust channel has a first, a second and a third exhaust zone. The first exhaust zone is connected to the third exhaust zone via the second exhaust zone, wherein the height of the third exhaust zone is greater than that of the first exhaust zone. The exhaust ring comprises a plurality of exhaust holes and an annular channel, wherein the exhaust holes are located around the carrier plate, and the gas in the accommodating space can be discharged in sequence through the exhaust holes, the annular channel and the exhaust channel, and is conducive to forming a stable flow field on the carrier plate, so as to improve the uniformity of thin film deposition.

Description

Technical Field

[0001] The invention relates to a deposition machine, which is beneficial to forming a stable flow field on a wafer carried by a carrier plate and improving the uniformity of thin film deposition. Background Art

[0002] With the continuous advancement of integrated circuit technology, electronic products are currently developing towards being thin, light, short, high-performance, highly reliable and intelligent. The miniaturization of transistors in electronic products is crucial. As the size of transistors decreases, the current transmission time and energy consumption can be reduced to achieve the purpose of fast computing and energy saving. In today's miniaturized transistors, some key thin films are only a few atoms thick, and the atomic layer deposition process is one of the main technologies for developing these micro structures.

[0003] The atomic layer deposition process is a technology that deposits materials layer by layer on the surface of a substrate in the form of single atoms. The main reactants of atomic layer deposition are two chemical substances, usually called precursors, and the two precursors are delivered to the reaction space in sequence.

[0004] Specifically, the first precursor is first delivered to the reaction space so that the first precursor is guided to the surface of the substrate. The chemical adsorption process automatically terminates when the surface is saturated. A clean gas is delivered to the reaction space, and the gas in the reaction space is extracted to remove the residual first precursor in the reaction space. A second precursor is injected into the reaction space so that the second precursor reacts with the first precursor chemically adsorbed on the surface of the substrate to generate the desired film. The reaction process ends until the reaction of the first precursor adsorbed on the surface of the substrate is completed. Thereafter, a clean gas is injected into the reaction space to remove the residual second precursor in the reaction space. By repeating the above steps, a thin film can be formed on the substrate.

[0005] In actual applications, the uniform distribution of precursors in the reaction space and the temperature of the substrate will have a considerable impact on the uniformity of the atomic layer deposition film. For this reason, major process equipment manufacturers have tried their best to improve the diffusion mechanism to improve the quality of the atomic layer deposition process. Summary of the invention

[0006] As described in the prior art, conventional deposition machines often fail to evenly distribute the precursors on the substrate, which affects the quality of the thin film deposited on the substrate surface. To this end, the present invention proposes a novel deposition machine that can form a uniform and stable flow field above the substrate and the carrier plate, so as to facilitate the formation of a thin film with uniform thickness on the surface of the substrate.

[0007] One object of the present invention is to provide a deposition machine, which mainly includes a chamber, a carrier plate, an exhaust ring and a diffusion unit, wherein the chamber includes a containing space and an exhaust channel. The exhaust channel is an annular body and is arranged around the periphery of the containing space. The exhaust ring includes a plurality of exhaust holes and an annular channel, wherein the exhaust holes are connected to the annular channel, so that the containing space is connected to the exhaust channel via the exhaust holes and the annular channel in sequence.

[0008] The plurality of exhaust holes can be evenly distributed around the carrier plate, and the exhaust channel includes a first exhaust area, a second exhaust area and a third exhaust area, wherein the third exhaust area is higher than the first exhaust area and is connected to the first exhaust area via the second exhaust area. The height of the second exhaust area gradually increases from the first exhaust area toward the third exhaust area, which is conducive to transferring the gas in the first exhaust area to the third exhaust area via the second exhaust area.

[0009] The special design of the exhaust channel and the exhaust ring of the present invention is conducive to exhausting the gas in the accommodating space of the cavity and forming a uniform and stable flow field on the substrate carried by the carrier plate, so as to deposit a thin film with uniform thickness on the surface of the substrate.

[0010] An object of the present invention is to provide a deposition machine, wherein the annular channel of the pumping ring is connected to the pumping channel via a plurality of connecting holes, and the setting density or aperture of the exhaust holes and / or connecting holes can be adjusted according to the structure of the pumping channel of the chamber.

[0011] Specifically, the density or diameter of the exhaust holes and / or connecting holes above the first exhaust zone may be greater than the density or diameter of the exhaust holes and / or connecting holes above the third exhaust zone, while the density or diameter of the exhaust holes and / or connecting holes above the second exhaust zone is between the two. Through the above design, the gas or precursor in the accommodating space will diffuse to the exhaust holes around the carrying surface on the upper surface of the wafer, roughly along the radial direction of the carrier plate, to form a uniform and stable flow field on the upper surface of the wafer.

[0012] In order to achieve the above-mentioned purpose, the present invention proposes a deposition machine, comprising: a chamber, comprising a accommodating space and a pumping channel, the pumping channel is located outside the accommodating space, wherein the pumping channel comprises a first pumping area, a second pumping area and a third pumping area, wherein a first height of the first pumping area is less than a third height of the third pumping area, and the second pumping area is located between the first pumping area and the third pumping area, and a second height of the second pumping area gradually increases from the first pumping area toward the third pumping area; a carrier plate, located in the accommodating space, and comprising a carrier surface for Carrying at least one wafer; an exhaust ring, comprising: an annular outer wall; an annular inner wall, located on the inner side of the annular outer wall and located around the carrying plate, wherein an annular channel is provided between the annular outer wall and the annular inner wall, and the fluid is connected to the exhaust channel of the cavity; a plurality of exhaust holes, arranged on the annular inner wall, and fluidly connected to the annular channel and the accommodating space, wherein a plurality of exhaust holes are arranged around the carrying surface of the carrying plate; and a diffusion unit, comprising: a diffusion surface, facing the carrying surface of the carrying plate; a plurality of air inlet holes, arranged on the diffusion surface, and fluidly connected to the accommodating space of the cavity.

[0013] The deposition machine comprises a third exhaust zone connected to an exhaust channel by an exhaust motor, and the cavity comprises a wafer inlet and outlet connected to the accommodating space, and the wafer inlet and outlet are located below the first exhaust zone.

[0014] In the deposition machine, the exhaust ring includes one or more connecting holes, and the annular channel of the exhaust ring is connected to the exhaust channel of the cavity via the connecting holes.

[0015] In the deposition machine, the arrangement density or aperture of the connection holes above the first exhaust zone is greater than the arrangement density or aperture of the connection holes on the third exhaust zone.

[0016] In the deposition machine, the plurality of exhaust holes of the exhaust ring are higher than the carrying surface of the carrying plate.

[0017] The deposition machine includes a transmission pipeline fluid connected to a diffusion unit, the transmission pipeline includes a transmission space and a guide unit, wherein the guide unit is arranged in the transmission space of the transmission pipeline, and the transmission space is divided into a first transmission space and a second transmission space, the second transmission space is connected to the diffusion unit, wherein the guide unit includes a plurality of perforations, connecting the first transmission space and the second transmission space.

[0018] The deposition machine comprises a protrusion arranged on a surface of the guide unit connected to the first transmission space, and the through holes are arranged around the protrusion and inclined relative to the surface of the guide unit connected to the first transmission space.

[0019] The deposition machine described above, wherein the vacuum ring includes a first annular slope located on the inner side of the annular outer wall, inclined relative to an axis of the carrier plate and facing the diffusion unit, and the diffusion unit includes a second annular slope arranged around the diffusion surface, wherein the inclination angles of the first annular slope and the second annular slope are the same, and are used to align the diffusion unit and the vacuum ring.

[0020] In the deposition machine, the density or diameter of the exhaust holes above the first exhaust zone is greater than the density or diameter of the exhaust holes above the third exhaust zone.

[0021] In the deposition machine, the second pumping area includes at least one inclined surface or an arc surface, connecting the first pumping area and a bottom of the third pumping area.

[0022] The beneficial effect of the present invention is to provide a novel deposition machine, which can form a uniform and stable flow field above the substrate and the carrier plate, so as to facilitate the formation of a thin film with uniform thickness on the surface of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 FIG. 4 is a cross-sectional schematic diagram of an embodiment of a deposition machine of the present invention.

[0024] Figure 2 It is a three-dimensional cross-sectional schematic diagram of an embodiment of a deposition machine of the present invention.

[0025] Figure 3 It is a three-dimensional exploded schematic diagram of an embodiment of a deposition machine of the present invention.

[0026] Figure 4 It is a top view of an embodiment of a chamber of a deposition machine of the present invention and a perspective view of an embodiment of an exhaust channel of the chamber.

[0027] Figure 5 FIG. 1 is a schematic exploded cross-sectional view of an embodiment of a deposition machine of the present invention.

[0028] Figure 6 It is a three-dimensional cross-sectional schematic diagram of an embodiment of a transmission pipeline of a deposition machine of the present invention.

[0029] Description of reference numerals: 10-deposition machine; 11-chamber; 111-wafer inlet and outlet; 112-accommodation space; 12-exhaust channel; 121-first exhaust area; 123-second exhaust area; 1231-inclined surface; 1233-arc surface; 125-third exhaust area; 13-carrying plate; 131-carrying surface; 14-wafer; 15-exhaust ring; 151-annular outer wall; 152-annular channel; 153-annular inner wall; 154-exhaust hole; 1 55-first annular slope; 156-connecting hole; 157-bottom; 16-exhaust motor; 17-diffusion unit; 171-diffusion surface; 172-air inlet hole; 173-second annular slope; 19-transmission pipeline; 191-flow guide unit; 1911-protrusion; 1912-perforation; 192-transmission space; 1921-first transmission space; 1923-second transmission space; H1-first height; H2-second height; H3-third height. DETAILED DESCRIPTION

[0030] See also Figure 1 and Figure 2 , are respectively a cross-sectional schematic diagram and a three-dimensional cross-sectional schematic diagram of an embodiment of a deposition machine of the present invention. As shown in the figure, the deposition machine 10 mainly includes a chamber 11, a carrier plate 13, an exhaust ring 15 and a diffusion unit 17, wherein the chamber 11 includes a receiving space 112 and an exhaust channel 12, and the exhaust channel 12 is located at the periphery of the receiving space 112. The carrier plate 13 is located in the receiving space 112 and includes a carrying surface 131 for carrying at least one wafer 14 as a substrate.

[0031] In one embodiment of the present invention, the accommodating space 112 of the cavity 11 is approximately cylindrical, and the air extraction channel 12 is an annular body or a tubular body and is disposed around the outside of the accommodating space 112. In another embodiment of the present invention, the accommodating space 112 may be a polygonal body, and the air extraction channel 12 is a polygonal tubular body.

[0032] like Figure 3 and Figure 4 As shown, the air pumping channel 12 includes a first air pumping area 121, a second air pumping area 123 and a third air pumping area 125, wherein the first air pumping area 121 is a partial annular channel with a first height H1, the second air pumping area 123 is a partial annular channel with a second height H2, and the third air pumping area 125 is a partial annular channel with a third height H3. The first air pumping area 121 is connected to the third air pumping area 125 via the second air pumping area 123 to form an annular air pumping channel 12.

[0033] The first height H1 of the first pumping area 121 is smaller than the third height H3 of the third pumping area 125, and the second height H2 of the second pumping area 123 gradually increases from the first pumping area 121 toward the third pumping area 125. Specifically, the second pumping area 123 may include an inclined surface 1231 or an arc surface 1233, wherein the inclined surface 1231 or the arc surface 1233 connects the bottom of the first pumping area 121 and the bottom of the third pumping area 125.

[0034] like Figure 1 As shown, the diffusion unit 17 includes a diffusion surface 171 and a plurality of air inlet holes 172, wherein when the diffusion unit 17 is connected to the chamber 11, the diffusion surface 171 and the air inlet holes 172 disposed on the diffusion surface 171 face the carrying surface 131 of the carrying plate 13 and / or the wafer 14. The air inlet holes 172 of the diffusion unit 17 are fluidically connected to the accommodating space 112 and are used to deliver gas or precursor to the top of the wafer 14.

[0035] Please refer to Figure 5 The exhaust ring 15 is an annular body and includes an annular outer wall 151 and an annular inner wall 153, wherein the annular inner wall 153 is located radially inward of the annular outer wall 151, and an annular channel 152 is formed between the annular outer wall 151 and the annular inner wall 153. For example, the annular outer wall 151 can be a larger cylinder, and the annular inner wall 153 can be a smaller cylinder.

[0036] The annular inner wall 153 is disposed around the carrying surface 131 of the carrier plate 13, and a plurality of exhaust holes 154 are disposed on the annular inner wall 153, wherein the exhaust holes 154 are fluidically connected to the annular channel 152 and the accommodating space 112 of the chamber 11. Specifically, when deposition is performed on the wafer 14 on the carrier plate 13, the exhaust holes 154 are disposed around the carrying surface 131 of the carrier plate 13 and / or around the wafer 14.

[0037] like Figure 1 As shown, the gas or precursor transported to the accommodating space 112 by the diffusion unit 17 will be discharged from the accommodating space 112 through the exhaust holes 154 of the pumping ring 15, wherein the gas or precursor will diffuse to the exhaust holes 154 around the carrying surface 131 of the susceptor plate 13 and / or the upper surface of the wafer 14 approximately along the radial direction of the susceptor plate 13. In this way, a uniform and stable flow field can be formed on the carrying surface 131 of the susceptor plate 13 and / or the surface of the wafer 14, and it is conducive to depositing a thin film with uniform thickness on the surface of the wafer 14. For example, during the deposition process, the exhaust holes 154 can be higher than the carrying surface 131 of the susceptor plate 13, or approximately close to the height of the upper surface of the wafer 14.

[0038] like Figure 5As shown, the air pumping ring 15 is located between the diffusion unit 17 and the cavity 11. In one embodiment of the present invention, the air pumping ring 15 may include a first annular slope 155, wherein the first annular slope 155 is located on the inner side of the annular outer wall 151, is inclined relative to the axis of the annular inner wall 153 and / or the carrier plate 13, and faces the diffusion unit 17. The diffusion unit 17 may include a second annular slope 173, wherein the second annular slope 173 is arranged around the diffusion surface 171. The first annular slope 155 and the second annular slope 173 have the same inclination angle, which can be used to align the diffusion unit 17 and the air pumping ring 15, and can improve the tightness of the connection between the diffusion unit 17 and the air pumping ring 15.

[0039] In addition, the pumping ring 15 may also include one or more connecting holes 156. For example, the connecting hole 156 may be disposed at the bottom 157 of the pumping ring 15 and fluidically connected to the annular channel 152. When the pumping ring 15 is disposed in the cavity 11, the connecting hole 156 at the bottom 157 of the pumping ring 15 will be aligned with the pumping channel 12, so that the pumping channel 12 of the cavity 11 is connected to the annular channel 152 of the pumping ring 15 via the connecting hole 156. The connecting hole 156 may be a plurality of through holes, or may be an annular or partially annular through hole.

[0040] In one embodiment of the present invention, the plurality of exhaust holes 154 may be evenly distributed on the annular inner wall 153 of the air pumping ring 15 , and the plurality of connecting holes 156 may be evenly distributed on the bottom 157 of the air pumping ring 15 .

[0041] like Figure 2 and Figure 5 As shown, in another embodiment of the present invention, the area or arrangement density of the exhaust holes 154 and / or the connection holes 156 can be adjusted according to the structure of the exhaust channel 12 of the chamber 11 to change the flow field of the carrying surface 131 of the carrier plate 13 and / or the upper surface of the wafer 14. For example, the arrangement density or aperture of the exhaust holes 154 and / or the connection holes 156 located above the first exhaust zone 121 can be greater than the arrangement density or aperture of the exhaust holes 154 and / or the connection holes 156 located above the third exhaust zone 125, while the arrangement density or aperture of the exhaust holes 154 and / or the connection holes 156 located above the second exhaust zone 123 is between the two. For example, the arrangement density of the exhaust holes 154 and / or the connection holes 156 above the second exhaust zone 123 can decrease from the first exhaust zone 121 toward the third exhaust zone 125. Specifically, the spacing between adjacent exhaust holes 154 and / or connecting holes 156 located above the first exhaust zone 121 is smaller than the spacing between adjacent exhaust holes 154 and / or connecting holes 156 located above the third exhaust zone 125. Of course, the adjustment of the arrangement density or aperture of the exhaust holes 154 and / or connecting holes 156 is only an embodiment of the present invention and does not limit the scope of the present invention.

[0042] The special design of the exhaust channel 12 of the present invention is not only conducive to forming a uniform gas field on the surface of the wafer 14, but also convenient for configuring the pipelines of the deposition machine 10. Specifically, the exhaust motor 16 can be fluidically connected to the exhaust channel 12 via the third exhaust area 125, and the wafer inlet and outlet 111 is disposed below the first exhaust area 121 and connected to the accommodating space 112.

[0043] like Figure 1 As shown, the diffusion unit 17 is fluidically connected to a transmission pipeline 19 , wherein the transmission pipeline 19 is used to transport gas or precursor to the diffusion unit 17 and transport it to the accommodating space 112 of the chamber 11 through the gas inlet 172 of the diffusion unit 17 .

[0044] like Figure 6 As shown, the transmission pipeline 19 includes a transmission space 192 for transmitting gas, and a guide unit 191 can be set in the transmission space 192. The guide unit 191 can divide the transmission space 192 into a first transmission space 1921 and a second transmission space 1923, wherein the second transmission space 1923 is connected to the diffusion unit 17. The guide unit 191 includes a plurality of through holes 1912, connecting the first transmission space 1921 and the second transmission space 1923.

[0045] In addition, the guide unit 191 may include a protrusion 1911, wherein the protrusion 1911 is arranged on a surface of the guide unit 191 connecting the first transmission space 1921, and the through hole 1912 is arranged around the protrusion 1911 and is inclined relative to the surface of the guide unit 191 connecting the first transmission space 1921 and the second transmission space 1932.

[0046] In actual application, gas or plasma can be transported to the first transmission space 1921 of the transmission pipeline 19. The gas or plasma will rotate in the first transmission space 1921 with the protrusion 1911 as the center, and will be transported to the second transmission space 1923 through the multiple perforations 1912 of the guide unit 191, so that the gas or plasma in the second transmission space 1923 forms a vortex with the axis of the transmission pipeline 19 as the rotation center.

[0047] The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. All equivalent changes and modifications to the shape, structure, characteristics and spirit described in the patent application scope of the present invention should be included in the patent application scope of the present invention.

[0048] Advantages of the present invention:

[0049] A novel deposition machine is provided, which can form a uniform and stable flow field above a substrate and a carrier plate, so as to facilitate the formation of a film with uniform thickness on the surface of the substrate.

[0050] The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. That is, all equivalent changes and modifications to the shape, structure, characteristics and spirit described in the patent application scope of the present invention should be included in the patent application scope of the present invention.

Claims

1. A deposition machine, characterized in that: include: A cavity, comprising a containing space and an exhaust channel, the exhaust channel is located outside the containing space, wherein the exhaust channel comprises a first exhaust zone, a second exhaust zone and a third exhaust zone, wherein a first height of the first exhaust zone is less than a third height of the third exhaust zone, and the second exhaust zone is located between the first exhaust zone and the third exhaust zone, a second height of the second exhaust zone gradually increases from the first exhaust zone toward the third exhaust zone, and the height of the exhaust zone refers to the distance between the top and the bottom of the exhaust zone; A carrier plate is located in the accommodating space and includes a carrying surface for carrying at least one wafer; A pumping ring, comprising: a circular outer wall; An annular inner wall is located inside the annular outer wall and around the carrier plate, wherein an annular channel is provided between the annular outer wall and the annular inner wall, and is fluidically connected to the air extraction channel of the cavity; A plurality of exhaust holes are disposed on the annular inner wall and fluidically connected to the annular channel and the accommodating space, wherein the plurality of exhaust holes are disposed around the carrying surface of the carrying plate; The air pumping ring comprises one or more connecting holes, and the annular channel of the air pumping ring is connected to the air pumping channel of the cavity via the connecting holes; and A diffusion unit, comprising: A diffusion surface facing the carrying surface of the carrying plate; A plurality of air inlet holes are arranged on the diffusion surface and are fluidically connected to the accommodating space of the cavity.

2. The deposition machine according to claim 1, characterized in that: The third exhaust zone includes an exhaust motor connected to the exhaust channel, and the cavity includes a wafer inlet and outlet connected to the accommodating space, and the wafer inlet and outlet is located below the first exhaust zone.

3. The deposition machine according to claim 1, characterized in that: The arrangement density or aperture of the connection holes above the first pumping area is greater than the arrangement density or aperture of the connection holes on the third pumping area.

4. The deposition machine according to claim 1, characterized in that: The plurality of exhaust holes of the air pumping ring are higher than the carrying surface of the carrying plate.

5. The deposition machine according to claim 1, characterized in that: It includes a transmission pipeline fluid connected to a diffusion unit, the transmission pipeline includes a transmission space and a guide unit, wherein the guide unit is arranged in the transmission space of the transmission pipeline and divides the transmission space into a first transmission space and a second transmission space, the second transmission space is connected to the diffusion unit, wherein the guide unit includes a plurality of perforations connecting the first transmission space and the second transmission space.

6. The deposition machine according to claim 5, characterized in that: A protrusion is arranged on a surface of the guide unit connected to the first transmission space, and the through hole is arranged around the protrusion and inclined relative to the surface of the guide unit connected to the first transmission space.

7. The deposition machine according to claim 1, characterized in that: The vacuum ring includes a first annular slope located on the inner side of the annular outer wall, inclined relative to an axis of the carrier plate and facing the diffusion unit. The diffusion unit includes a second annular slope arranged around the diffusion surface, wherein the inclination angles of the first annular slope and the second annular slope are the same and are used to align the diffusion unit and the vacuum ring.

8. The deposition machine according to claim 1, characterized in that: The arrangement density or aperture of the exhaust holes above the first exhaust zone is greater than the arrangement density or aperture of the exhaust holes above the third exhaust zone.

9. The deposition machine according to claim 1, characterized in that: The second pumping area includes at least one inclined surface or an arc surface, connecting the first pumping area and a bottom of the third pumping area.

Images