A lanthanide metal-doped IZO target material and its preparation method and application

Abstract

The present invention discloses a lanthanide metal-doped IZO target material and a preparation method and application thereof. The lanthanide metal-doped IZO target material of the present invention comprises, by mass percentage, 0.5% to 10% of Ln metal oxide, 60% to 87% of indium oxide and 5% to 15% of zinc oxide, wherein the Ln metal is selected from at least one of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium. The lanthanide metal-doped IZO target material prepared by controlling the proportion of each component in the lanthanide metal-doped IZO target material and combining chemical coprecipitation has the advantages of high density, uniform color and not easy to form nodules during the sputtering process, and has a wide range of application value.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic functional materials, and in particular to a lanthanide metal-doped IZO target material and a preparation method and application thereof. Background Art

[0002] Lanthanide metal-doped IZO target is a semiconductor material of multi-metal oxide. Due to its high light transmittance and high carrier concentration, it can be used to make large-size and high-resolution displays.

[0003] In the related art, most of the lanthanide-doped IZO films are prepared by sputtering deposition using Ln-IZO targets, wherein the Ln-IZO target is a Ln-IZO powder precursor prepared by chemical coprecipitation, which is calcined to obtain a uniform Ln-IZO powder with high sintering activity, and then sintered under certain conditions after compression molding to obtain a high-density target. In addition, the Ln-IZO powder prepared by the conventional mixing method (i.e., directly using various oxide powders to mix in proportion) is difficult to mix evenly and has low sintering activity. In the actual production process, the uneven distribution of components can easily cause uneven color of the target after sintering, and low sintering activity can also cause its sintering density to be low. In order to increase the sintering density, the relevant technical personnel will further increase the sintering temperature. However, the increase in sintering temperature is likely to cause the grain size of the target to grow rapidly, resulting in component segregation, abnormal discharge effects during sputtering coating, and deterioration of the quality and characteristics of the film.

[0004] Therefore, it is still necessary to improve the uniformity and density of lanthanide metal-doped IZO targets and ensure that sputtering does not easily lead to nodules. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides a lanthanide metal-doped IZO target material and a preparation method thereof, which can improve the uniformity and density of the lanthanide metal-doped IZO target material and ensure that sputtering is not prone to nodule formation.

[0006] The present invention also provides a method for preparing the lanthanide metal-doped IZO target material.

[0007] The present invention also proposes an application of the lanthanide metal-doped IZO target in the preparation of a display.

[0008] In a first aspect of the present invention, there is provided a lanthanide metal-doped IZO target material, comprising, by mass percentage:

[0009] Ln-based metal oxides 0.5%-10%, indium oxide 60%-87% and zinc oxide 5%-15%;

[0010] The Ln-based metal is selected from at least one of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium.

[0011] The lanthanide metal-doped IZO target material according to the embodiment of the present invention has at least the following beneficial effects: by controlling the proportion of each component in the lanthanide metal-doped IZO target material, the lanthanide metal-doped IZO target material obtained has the advantages of high density, uniform color, and not easy to form nodules during the sputtering process.

[0012] According to some embodiments of the present invention, the method comprises, by weight percentage:

[0013] Ln-based metal oxide 0.5%-10%wt%, indium oxide 60%-87% and zinc oxide 5%-15%;

[0014] The Ln-based metal is selected from at least one of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium.

[0015] According to some embodiments of the present invention, the method comprises, by weight percentage:

[0016] Ln-based metal oxide 0.5%-10%wt%, indium oxide 60%-87% and zinc oxide 5%-15%;

[0017] The Ln-based metal is selected from at least one of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium.

[0018] According to some embodiments of the present invention, the density of the lanthanide metal-doped IZO target is 98.0% to 99.3%.

[0019] According to some embodiments of the present invention, the density of the lanthanide metal-doped IZO target is 98.5% to 99.22%.

[0020] The second aspect of the present invention provides a method for preparing the above-mentioned lanthanide metal-doped IZO target, comprising the following preparation steps:

[0021] Step S1, adding a precipitant to a mixed solution of Ln-based metal salt, indium salt and zinc salt for precipitation, solid-liquid separation, and drying and calcining the solid phase to obtain a Ln-IZO precursor; wherein the Ln-based metal in the Ln-based metal salt is selected from at least one of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium;

[0022] Step S2, mixing the Ln-IZO precursor with a dispersant and a binder to prepare a slurry, and spray drying the mixture to obtain Ln-IZO powder;

[0023] Step S3, subjecting the Ln-IZO powder to compression molding and cold isostatic pressing in sequence to obtain a blank target material;

[0024] Step S4, sintering the rough target material to obtain the lanthanide metal-doped IZO target material.

[0025] The preparation method according to the embodiment of the present invention has at least the following beneficial effects: the present invention prepares a powder with uniform sintering composition and high sintering activity by controlling the precipitation process through the method of chemical co-precipitation, and achieves high density of the target material by controlling the sintering process.

[0026] According to some embodiments of the present invention, the Ln-based metal salt is selected from at least one of Ln-based metal sulfates, Ln-based metal nitrates and Ln-based metal chlorides.

[0027] According to some embodiments of the present invention, the indium salt is selected from at least one of indium sulfate, indium nitrate and indium chloride.

[0028] According to some embodiments of the present invention, the zinc salt is selected from at least one of zinc sulfate, zinc nitrate and zinc chloride.

[0029] According to some embodiments of the present invention, in step S1, the precipitant is selected from inorganic bases and carbonates.

[0030] According to some embodiments of the present invention, the inorganic base is selected from at least one of sodium hydroxide, potassium hydroxide, cesium hydroxide, ammonia monohydrate and ammonia water.

[0031] Preferably, the inorganic base is sodium hydroxide or potassium hydroxide.

[0032] According to some embodiments of the present invention, the carbonate is selected from at least one of sodium carbonate, potassium carbonate, cesium carbonate, sodium bicarbonate, potassium bicarbonate and cesium bicarbonate.

[0033] Preferably, the carbonate is sodium carbonate.

[0034] Preferably, the concentration of the ammonia water is 25% to 28%.

[0035] Preferably, the concentration of the ammonia water is 28%.

[0036] In the present invention, the precipitant is preferably sodium hydroxide. Under the same other conditions, when the precipitant is sodium hydroxide, the relative density of the lanthanide metal doped IZO target obtained is better than that of adding other precipitants, which is 99.00%. When ammonia water is used as the precipitant, the relative density of the lanthanide metal doped IZO target obtained is 98.5%, which is relatively low.

[0037] According to some embodiments of the present invention, the pH value of the precipitate is 6-9.

[0038] Preferably, the pH value of the precipitation is 6-8.

[0039] The pH value of precipitation is an important factor affecting the quality of lanthanide metal-doped IZO target materials. In the present invention, when the pH value is greater than 9, the prepared lanthanide metal-doped IZO target materials are prone to nodule formation during the sputtering process due to excessively fast crystal growth; and when the precipitation pH value is between 6 and 8, a higher target material relative density can be obtained, and no nodule formation will occur during the sputtering process.

[0040] According to some embodiments of the present invention, in step S1, the drying method is vacuum freeze-drying.

[0041] Vacuum freeze drying is helpful to prevent the agglomeration of nanopowders.

[0042] According to some embodiments of the present invention, the calcination temperature is 600°C to 1200°C.

[0043] According to some embodiments of the present invention, the calcination temperature is 700°C to 900°C.

[0044] Preferably, the calcination temperature is 800°C.

[0045] According to some embodiments of the present invention, the calcination time is 1.5 h to 2.5 h.

[0046] Preferably, the calcination time is 2 hours.

[0047] According to some embodiments of the present invention, the model of the dispersant is CELUNA D-305, which is purchased from Chukyo Oil & Fats Co., Ltd.

[0048] According to some embodiments of the present invention, the added amount of the dispersant is 0.5% to 2%.

[0049] According to some embodiments of the present invention, the binder is polyvinyl alcohol, purchased from Shanghai Sinopharm Reagent Group Sinopharm Group with a product number of 30153160.

[0050] According to some embodiments of the present invention, the added amount of the binder is 2% to 4%.

[0051] According to some embodiments of the present invention, in step S2, the specific surface area of ​​the Ln-IZO powder is 5 m 2 / g~15m 2 / g.

[0052] Preferably, the specific surface area of ​​the Ln-IZO powder is 10 m 2 / g~12m 2 / g.

[0053] While retaining the powder sintering activity, the Ln-IZO powder with this specific surface area is more conducive to molding, and the elastic aftereffect of compression molding is smaller.

[0054] According to some embodiments of the present invention, in step S3, the compression molding pressure is 0.1 MPa to 0.8 MPa.

[0055] Preferably, the cold isostatic pressing pressure is 200 MPa to 400 MPa.

[0056] According to some embodiments of the present invention, in step S4, the debonding temperature during the sintering process is 400°C to 700°C.

[0057] Debinding at this temperature can effectively remove the added dispersant and binder from the green body, making it easier for subsequent sintering.

[0058] According to some embodiments of the present invention, in step S4, the sintering temperature is 1100° C. to 1400° C.;

[0059] Preferably, the sintering temperature is 1150°C to 1400°C;

[0060] In the present invention, if the sintering temperature is too low, it is easy to cause a low relative density of the target material, thereby reducing the quality of the target material; if the relative density is too high, nodules are likely to occur during the sputtering process of the target material, and the crystals of the target material are coarse. Therefore, choosing a suitable sintering temperature is crucial to improving the quality of the target material.

[0061] According to some embodiments of the present invention, in step S4, the sintering pressure is 0.05 MPa to 0.3 MPa.

[0062] Preferably, the sintering pressure is 0.2Mpa to 0.3Mpa.

[0063] When the sintering pressure is too high, the density improvement effect is not obvious, and the equipment requirements are higher, the production cost is also higher, which is not conducive to industrial production. When the sintering pressure is too low, it is difficult to achieve the effect of increasing density.

[0064] Increasing the sintering pressure during the sintering process is beneficial to improving the quality of the lanthanide metal-doped IZO target. In the present invention, under the same other preparation conditions, as the sintering pressure increases, the relative density of the target material is significantly improved, and the prepared target material does not show nodule phenomenon during the sputtering process.

[0065] According to some embodiments of the present invention, in step S4, the sintering time is 550 min to 650 min.

[0066] Preferably, the sintering time is 600 min.

[0067] The third aspect of the present invention provides an application of the above-mentioned lanthanide metal-doped IZO target in the preparation of a display.

[0068] Since this application adopts all the technical solutions of the lanthanide metal-doped IZO target material of the above-mentioned embodiment, it has at least all the beneficial effects brought by the technical solutions of the above-mentioned embodiment.

[0069] Other features and advantages of the present invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the present invention. DETAILED DESCRIPTION

[0070] The following will be combined with the embodiments to clearly and completely describe the concept of the present invention and the technical effects produced, so as to fully understand the purpose, characteristics and effects of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, other embodiments obtained by those skilled in the art without creative work are all within the scope of protection of the present invention.

[0071] In the description of the present invention, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0072] If the specific conditions are not specified in the examples, the experiments were carried out under conventional conditions or conditions recommended by the manufacturer. If the manufacturers of the reagents or instruments are not specified, they are all conventional products that can be purchased commercially.

[0073] In the embodiment of the present invention, the dispersant was purchased from Chukyo Oil Co., Ltd., and the product number is CELUNA D-305;

[0074] The binder was PVA with a degree of polymerization of 1750±50, purchased from Shanghai Sinopharm Reagent Group Co., Ltd., with the catalog number 30153160.

[0075] Example 1

[0076] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0077] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 6 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 140 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0078] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and a slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0079] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0080] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1400° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0081] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0082] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , continuous coating for 60 hours, and observed the poisoning of the lanthanide metal-doped IZO target, that is, point-like protrusions appeared on the surface of the target.

[0083] Example 2

[0084] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0085] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 7 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 120 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0086] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0087] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0088] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1400° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0089] The lanthanide metal-doped IZO target prepared in this embodiment includes, by weight percentage, 5% wt% of Ln-based metal praseodymium oxide, 85 wt% of indium oxide, and 10 wt% of zinc oxide;

[0090] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the coating was continued for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 98.90%, the color was uniform, and no nodules or coarse crystals appeared.

[0091] Example 3

[0092] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0093] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0094] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0095] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0096] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1400° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0097] The lanthanide metal-doped IZO target prepared in this embodiment includes, by weight percentage, 5% wt% of Ln-based metal praseodymium oxide, 85 wt% of indium oxide, and 10 wt% of zinc oxide;

[0098] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the coating was continued for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 99.00%, the color was uniform, and no nodules or coarse crystals appeared.

[0099] Example 4

[0100] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0101] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 9 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 100 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0102] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0103] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0104] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1400° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0105] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0106] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 98.80%, the color uniformity was relatively reduced, and no nodules and coarse crystals appeared.

[0107] Example 5

[0108] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0109] Step S1: adding a precipitant KOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0110] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0111] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0112] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1400° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0113] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0114] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the coating was continued for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 98.90%, the color was uniform, and no nodules or coarse crystals appeared.

[0115] Example 6

[0116] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0117] Step S1: adding a precipitant of sodium carbonate to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying the solid precipitate to obtain a specific surface area of ​​about 115 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0118] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0119] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0120] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1400° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0121] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0122] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the coating was continuously performed for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 98.70%, the color was uniform, and no nodules or coarse crystals appeared.

[0123] Example 7

[0124] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0125] Step S1: adding ammonia water as a precipitant to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying the solid precipitate to obtain a specific surface area of ​​about 120 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0126] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0127] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0128] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1400° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0129] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0130] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the coating was continuously performed for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 98.50%, the color was uniform, and no nodules or coarse crystals appeared.

[0131] Example 8

[0132] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0133] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0134] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0135] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0136] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1100° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0137] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0138] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the target obtained by the method of this embodiment had a relative density of 97.80%, yellow color, good uniformity, and no nodules or coarse crystals.

[0139] Example 9

[0140] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0141] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0142] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0143] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0144] Step S4: The formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1150° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0145] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0146] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 98.00%, the color was slightly yellow, the uniformity was good, and no nodules and coarse crystals appeared.

[0147] Example 10

[0148] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0149] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0150] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0151] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0152] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1200° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0153] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0154] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 98.10%, the color was slightly yellow, the uniformity was good, and no nodules and coarse crystals appeared.

[0155] Embodiment 11

[0156] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0157] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0158] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0159] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0160] Step S4: The formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1250° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0161] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0162] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 98.30%, the color was slightly yellow, the uniformity was good, and no nodules and coarse crystals appeared.

[0163] Example 12

[0164] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0165] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0166] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0167] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0168] Step S4: The formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1300° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0169] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0170] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the target obtained by the method of this embodiment had a relative density of 98.50%, a light dark green color, good uniformity, and no nodules or coarse crystals.

[0171] Example 13

[0172] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0173] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0174] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0175] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0176] Step S4: The formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1350° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0177] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0178] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the target obtained by the method of this embodiment had a relative density of 99.00%, a dark green color, good uniformity, and no nodules or coarse crystals.

[0179] Embodiment 14

[0180] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0181] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0182] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0183] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0184] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1400° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0185] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0186] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the target obtained by the method of this embodiment had a relative density of 99.00%, a dark green color, good uniformity, and no nodules or coarse crystals.

[0187] Embodiment 15

[0188] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0189] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0190] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0191] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0192] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1200° C. and a pressure of 0.05 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0193] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0194] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 98.60%, the color was light dark green, the uniformity was good, and no nodules and coarse crystals appeared.

[0195] Example 16

[0196] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0197] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0198] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0199] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0200] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1200° C. and a pressure of 0.1 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0201] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0202] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the target obtained by the method of this embodiment had a relative density of 99.00%, a dark green color, good uniformity, and no nodules or coarse crystals.

[0203] Embodiment 17

[0204] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0205] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0206] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0207] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0208] Step S4: The formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1200° C. and a pressure of 0.15 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0209] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0210] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the target obtained by the method of this embodiment had a relative density of 99.10%, a dark green color, good uniformity, and no nodules or coarse crystals.

[0211] Embodiment 18

[0212] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0213] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0214] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0215] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0216] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1200° C. and a pressure of 0.2 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0217] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0218] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the target obtained by the method of this embodiment had a relative density of 99.20%, a dark green color, good uniformity, and no nodules or coarse crystals.

[0219] Embodiment 19

[0220] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0221] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0222] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0223] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0224] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1200° C. and a pressure of 0.25 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0225] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0226] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the target obtained by the method of this embodiment had a relative density of 99.21%, a dark green color, good uniformity, and no nodules or coarse crystals.

[0227] Embodiment 20

[0228] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0229] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0230] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0231] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0232] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1200° C. and a pressure of 0.3 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0233] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0234] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the target obtained by the method of this embodiment had a relative density of 99.22%, a dark green color, good uniformity, and no nodules or coarse crystals.

[0235] Embodiment 21

[0236] This embodiment is a method for preparing a lanthanide metal cerium-doped IZO target, which specifically includes the following steps:

[0237] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt cerium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0238] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0239] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0240] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1200° C. and a pressure of 0.3 MPa for 10 hours to obtain a lanthanide metal cerium-doped IZO target material.

[0241] The lanthanide metal cerium doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal cerium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0242] The lanthanide metal cerium doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal cerium doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal cerium doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 99.25%, the color was dark green, the uniformity was good, and no nodules and coarse crystals appeared.

[0243] Embodiment 22

[0244] This embodiment is a method for preparing a lanthanide metal lanthanum doped IZO target, which specifically includes the following steps:

[0245] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt lanthanum chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying the solid precipitate to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0246] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0247] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0248] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1200° C. and a pressure of 0.3 MPa for 10 hours to obtain a lanthanide metal lanthanum-doped IZO target material.

[0249] The lanthanum metal lanthanum doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln metal lanthanum oxide, 85% of indium oxide and 10% of zinc oxide;

[0250] The lanthanide metal lanthanum doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal lanthanum doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal lanthanum doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 99.28%, the color was dark green, the uniformity was good, and no nodules and coarse crystals appeared.

[0251] Embodiment 23

[0252] This embodiment is a method for preparing a lanthanide metal neodymium-doped IZO target, which specifically includes the following steps:

[0253] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt neodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0254] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0255] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0256] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1200° C. and a pressure of 0.3 MPa for 10 hours to obtain a lanthanide metal neodymium-doped IZO target material.

[0257] The lanthanide metal neodymium doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln metal neodymium oxide, 85% of indium oxide and 10% of zinc oxide;

[0258] The lanthanide metal neodymium doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal neodymium doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal neodymium doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 99.24%, the color was dark green, the uniformity was good, and no nodules and coarse crystals appeared.

[0259] Embodiment 24

[0260] This embodiment is a method for preparing a lanthanide metal europium-doped IZO target, which specifically includes the following steps:

[0261] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt europium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0262] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0263] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0264] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1200° C. and a pressure of 0.3 MPa for 10 hours to obtain a lanthanide metal europium-doped IZO target material.

[0265] The lanthanide metal europium-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal europium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0266] The lanthanide metal europium doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal europium doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the coating was continuously performed for 60 hours, and the poisoning of the lanthanide metal europium doped IZO target was detected. The results showed that the target obtained by the method of this embodiment had a relative density of 99.25%, a dark green color, good uniformity, and no nodules or coarse crystals.

[0267] Comparative Example 1

[0268] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0269] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 10 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 70 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0270] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0271] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0272] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1400° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0273] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0274] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the coating was continuously performed for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 98.50%, the color uniformity was relatively low, and serious nodules and segregation occurred.

[0275] Comparative Example 2

[0276] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0277] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0278] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0279] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0280] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1450° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0281] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0282] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 99.00%, the color was dark green, and there were slight nodules and coarse crystals.

[0283] Comparative Example 3

[0284] This embodiment is a method for preparing a lanthanide metal-doped IZO target, which specifically includes the following steps:

[0285] Step S1: adding a precipitant NaOH to a mixed solution of 0.3 mol / L Ln-based metal salt praseodymium chloride, 0.3 mol / L indium chloride and 0.3 mol / L zinc chloride, and adjusting the precipitation pH to 8 for precipitation, solid-liquid separation, washing the solid precipitate with deionized water, and vacuum freeze-drying it to obtain a specific surface area of ​​about 110 m 2 / g of powder product, the powder product was calcined at 800°C for 2h to obtain a uniformly distributed Ln-IZO precursor;

[0286] Step S2: 1% dispersant and 3% binder are added to the above Ln-IZO precursor, and the slurry is obtained by ball milling, and then Ln-IZO powder is obtained by spray drying. The specific surface area of ​​the Ln-IZO powder is 10m 2 / g~12m 2 / g;

[0287] Step S3: molding the obtained Ln-IZO powder at a pressure of 0.1 MPa to 0.8 MPa, and performing cold isostatic pressing at a pressure of 200 MPa to 400 MPa to obtain a blank target material;

[0288] Step S4: the formed blank target material is placed at 450° C. for debonding, and then sintered at a temperature of 1500° C. and a pressure of 0 MPa for 10 hours to obtain a lanthanide metal-doped IZO target material.

[0289] The lanthanide metal-doped IZO target prepared in this embodiment includes, by mass percentage, 5% of Ln-based metal praseodymium oxide, 85% of indium oxide, and 10% of zinc oxide;

[0290] The lanthanide metal-doped IZO target prepared in this embodiment was subjected to a coating test. The obtained lanthanide metal-doped IZO target was bound to a copper backplane and installed in a DC magnetron sputtering device for sputtering coating. The coating power was 1.5 W / cm 2 , the film was continuously coated for 60 hours, and the poisoning of the lanthanide metal-doped IZO target was detected. The results showed that the relative density of the target obtained by the method of this embodiment was 99.01%, the color was dark green, and nodules and coarse crystals appeared.

[0291] In order to facilitate the understanding of the present invention, the process parameters of the above embodiments are summarized, which are specifically shown in Table 1:

[0292] Table 1: Control of preparation process parameters of lanthanide metal-doped IZO targets of Examples 1 to 20 and Comparative Examples 1 to 3

[0293]

[0294]

[0295] Note: The color is directly related to the density of the target material. Generally, the yellower the color, the lower the density. “-” means not detected.

[0296] As can be seen from Table 1, the difference between Examples 1 to 4 and Comparative Example 1 is that the precipitation pH values ​​are different. When the pH is 7 to 8, a target material with a relatively high relative density and good color uniformity can be obtained, and the target material is not prone to nodulation and segregation. When the pH value is 10 (as shown in Comparative Example 1), the density of the prepared target material is significantly reduced, and more serious nodulation and segregation occur.

[0297] In the present invention, the difference between Example 3 and Examples 5 to 7 is that different precipitants are used. The test results show that the type of precipitant has little effect on the color uniformity of the target material, but has a certain effect on the density of the target material. When the precipitant is sodium hydroxide, the relative density of the target material is the largest, which can reach 99.00%.

[0298] In the present invention, the difference between Examples 8 to 14 and Comparative Examples 2 to 3 lies in the different sintering temperatures, wherein the sintering temperature of Example 8 is the lowest, which is 1100°C. The results show that the target material obtained at this temperature has a low relative density of only 97.80%, and a yellowish color, but has no effect on its uniformity; when the sintering temperature is 1150°C to 1400°C, a relatively high target material density can be obtained, wherein when the sintering temperature is 1300°C to 1400°C, the target material quality obtained is the best, and its relative density reaches more than 98.5%; and when the sintering temperature reaches 1450°C and above (as shown in Comparative Examples 2 and 3), although a higher relative density can be obtained, nodules and coarse crystals exist.

[0299] In the present invention, the difference between Examples 15 to 20 is the different sintering pressures. The results show that under the same conditions, increasing the sintering pressure is beneficial to improving the sintering density, and the prepared target material is less likely to form nodules during the sputtering process.

[0300] In addition, in the present invention, the difference between Examples 20 to 24 is that the doped lanthanide metals are different. The results show that the different lanthanide metal-doped IZO target materials prepared by the preparation process of the present invention have good relative density, and the target material has uniform color and no nodule formation occurs.

[0301] In summary, the preparation process of the lanthanide metal-doped IZO target of the present invention can solve the problems of low sintering density, uneven color and sputtering nodules in the preparation process of the lanthanide doped target by adjusting the type of precipitant, controlling the precipitation pH value, sintering temperature and sintering pressure, thereby providing an important reference value for the preparation of high-quality sputtering films.

[0302] The above is a detailed description of the embodiments of the present invention, but the present invention is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the relevant technical field without departing from the purpose of the present invention. In addition, the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

Claims

1. A lanthanide metal-doped IZO target, characterized in that: In terms of mass percentage, it includes: Ln series metal oxides 0.5%~10%, indium oxide 60%~87% and zinc oxide 5%~15%; In the Ln-based metal oxide, the Ln-based metal is at least one selected from lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium; The lanthanide metal-doped IZO target is prepared by the following preparation method: Step S1, adding a precipitant to a mixed solution of Ln-based metal salt, indium salt and zinc salt for precipitation, solid-liquid separation, and drying and calcining the solid phase to obtain a Ln-IZO precursor; wherein the pH value of the precipitate is 7-9; Step S2, slurrying the Ln-IZO precursor, dispersant and binder, and spray drying to obtain Ln-IZO powder; wherein the added amount of the dispersant is 0.5% to 2%, and the added amount of the binder is 2% to 4%; Step S3, subjecting the Ln-IZO powder to compression molding and cold isostatic pressing in sequence to obtain a blank target material; Step S4, sintering the rough target material to obtain the lanthanide metal-doped IZO target material, wherein the sintering temperature is 1150° C. to 1400° C., and the sintering time is 550 min to 650 min.

2. The lanthanide metal-doped IZO target according to claim 1, characterized in that: The density of the lanthanide metal-doped IZO target is 98.0% to 99.3%.

3. The lanthanide metal-doped IZO target according to claim 1, characterized in that: The Ln-based metal salt is selected from at least one of Ln-based metal sulfates, Ln-based metal nitrates and Ln-based metal chlorides.

4. The lanthanide metal-doped IZO target according to claim 1, characterized in that: The indium salt is selected from at least one of indium sulfate, indium nitrate and indium chloride.

5. The lanthanide metal-doped IZO target according to claim 1, characterized in that: The zinc salt is selected from at least one of zinc sulfate, zinc nitrate and zinc chloride.

6. The lanthanide metal-doped IZO target according to claim 1, characterized in that: In step S1, the precipitant is selected from inorganic bases and carbonates.

7. The lanthanide metal-doped IZO target according to claim 6, characterized in that: The inorganic base is selected from at least one of sodium hydroxide, potassium hydroxide, cesium hydroxide, ammonia monohydrate and ammonia water.

8. The lanthanide metal-doped IZO target according to claim 6, characterized in that: The carbonate is selected from at least one of sodium carbonate, potassium carbonate, cesium carbonate, sodium bicarbonate, potassium bicarbonate and cesium bicarbonate.

9. The lanthanide metal-doped IZO target according to claim 1, characterized in that: In step S1, the calcination temperature is 600° C. to 1200° C., and the calcination time is 1.5 h to 2.5 h.

10. The lanthanide metal-doped IZO target according to claim 1, characterized in that: In step S2, the specific surface area of ​​the Ln-IZO powder is 5 m 2 / g ~15m 2 / g.

11. The lanthanide metal-doped IZO target according to claim 1, characterized in that: The specific surface area of ​​the Ln-IZO powder is 10 m 2 / g ~12m 2 / g.

12. The lanthanide metal-doped IZO target according to claim 1, characterized in that: In step S3, the compression molding pressure is 0.1 MPa to 0.8 MPa.

13. The lanthanide metal-doped IZO target according to claim 1, characterized in that: The cold isostatic pressing pressure is 200Mpa~400Mpa.

14. The lanthanide metal-doped IZO target according to claim 1, characterized in that: In step S4, degumming is performed before sintering, and the degumming temperature is 400°C to 700°C.

15. The lanthanide metal-doped IZO target according to claim 1, characterized in that: The sintering pressure is 0.05Mpa~0.3Mpa.

16. Use of the lanthanide metal-doped IZO target material as claimed in any one of claims 1 to 15 in the preparation of a display.

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