Impedance optimization method and device based on beam control

Abstract

The present application is applicable to the field of metamaterial technology, and provides an impedance optimization method and device based on beam control, the method comprising: determining a first equivalent parameter matrix, the first equivalent parameter matrix corresponding to the beam control function of a target beam control device, generating a first cellular database, selecting a plurality of first cells from the first cellular database according to a first slow-changing requirement, and splicing the first cells to form a target beam control device, so that the target beam control device changes its control capability of a first incident beam in a horizontal direction from weak to strong and then from strong to weak, and the reflectivity of the first incident beam changes from small to large and then from large to small, thereby increasing the efficiency of beam coupling into the device and realizing impedance optimization during beam propagation.

Description

Technical Field

[0001] The present application belongs to the field of metamaterial technology, and in particular, relates to an impedance optimization method and device based on beam control. Background Art

[0002] At present, in the field of metamaterials, the equivalent material parameters of metamaterial devices are usually changed by changing the microstructure of metamaterial cells. For example, the length, area, rotation angle, etc. of the microstructure of metamaterial cells can be changed.

[0003] However, merely changing the microstructure of the metamaterial cell to make the equivalent parameters of the metamaterial device match the electromagnetic parameter requirements of the ideal device model can meet the electromagnetic parameter requirements and achieve the control effect of the beam path of the electromagnetic wave or sound wave. However, the electromagnetic wave or sound wave will be reflected when passing through the interface between the background environment and the metamaterial device due to impedance mismatch. After the electromagnetic wave or the sound wave is reflected, the energy entering the metamaterial device is reduced, which reduces the efficiency of energy coupling into the metamaterial device system. In addition, when multiple metamaterial devices are used in combination, additional interference will be generated, which will also reduce the efficiency of energy coupling into the system. Summary of the invention

[0004] The present application provides an impedance optimization method and device based on beam control, by determining a first equivalent parameter matrix, which corresponds to the beam control function of a target beam control device, generating a first cellular database, selecting a plurality of the first cells from the first cellular database according to a first slow-changing requirement and splicing the first cells to form a target beam control device, so that the control capability of the target beam control device over a first incident beam in a horizontal direction changes from weak to strong and then from strong to weak, and the reflectivity of the first incident beam changes from small to large and then from large to small, thereby increasing the efficiency of beam coupling into the device and realizing impedance optimization during beam propagation.

[0005] In a first aspect, a beam control-based impedance optimization method is provided, which determines a first equivalent parameter matrix, wherein the first equivalent parameter matrix corresponds to a beam control function of a target beam control device, wherein the target beam control device includes a plurality of first partitions, wherein the first partitions include a plurality of first cells, wherein the first cells include one or more first structures and a first background material, and wherein one or more first structures are placed above the first background material; generates a first cell database, wherein a first impedance matrix and a first characteristic matrix of the first cells in the first cell database vary within a first range; selects a plurality of the first cells from the first cell database according to a first gradual change requirement and splices the first cells to form the target beam control device, wherein the first gradual change requirement includes a second equivalent parameter matrix of the target beam control device. The matrix is ​​the same as the first equivalent parameter matrix, and the first slow-changing requirement also includes that the number of the first partitions is an odd number greater than 1; the plurality of the first partitions are arranged in the horizontal direction, so that the control ability of the target beam control device composed of the plurality of the first partitions in the horizontal direction over the first incident beam changes from weak to strong and then from strong to weak, and the reflectivity of the first incident beam changes from small to large and then from large to small, and the reflectivity is when the first incident beam enters the target beam control device from the outside, the energy of the first incident beam reflected out of the outside accounts for the proportion of the total energy of the first incident beam; after controlling the first incident beam to be incident from the outside to the target beam control device in the horizontal direction, the first incident beam is controlled to be horizontally emitted to the outside through the target beam control device.

[0006] In combination with the first aspect, in certain implementations of the first aspect, the geometric parameters of the first structure are changed so that the first cell has a different first characteristic matrix, wherein when the first characteristic matrix of the first cell is different, the control ability of the first cell over the first incident beam is different; the material of the first background material is changed so that the first cell has a different first impedance matrix, wherein when the first impedance matrix of the first cell is different, the reflectivity of the first incident beam is different.

[0007] In combination with the first aspect, in certain implementations of the first aspect, geometric parameters of the first structure of the first cell, the material of the first background material, the first characteristic matrix and the first impedance matrix corresponding to the first cell are stored in a first cell database.

[0008] In combination with the first aspect, in some implementations of the first aspect, one or more of the first structures and the first background material of the first cells in the same first partition are respectively the same.

[0009] In combination with the first aspect, in certain implementations of the first aspect, the first subarea located in the center portion of the target beam control device has the strongest control capability over the first incident beam and the largest reflectivity;

[0010] The control capability gradually decreases from the center of the target beam control device to both sides in the horizontal direction;

[0011] The reflectivity gradually decreases from the center of the target beam control device to both sides in the horizontal direction.

[0012] In combination with the first aspect, in some implementations of the first aspect, the number of the first partitions is used to characterize the control capability of the target beam control device on the first incident beam and the slowness of the change of the reflectivity;

[0013] Among them, when the number of the first partitions is larger, the control ability of the target beam control device over the first incident beam and the slowness of the change of the reflectivity are greater; when the number of the first partitions is smaller, the control ability of the target beam control device over the first incident beam and the slowness of the change of the reflectivity are smaller.

[0014] In combination with the first aspect, in some implementations of the first aspect, the beam control function includes shifting or rotating the first incident beam.

[0015] In combination with the first aspect, in some implementations of the first aspect, the type of the first incident beam includes acoustic waves or electromagnetic waves.

[0016] In a second aspect, a device for impedance optimization based on beam control is provided, comprising: one or more processors; one or more memories; the one or more memories storing one or more computer programs, the one or more computer programs comprising instructions, which, when executed by the one or more processors, enable the terminal device to execute the method described in the first aspect.

[0017] In a third aspect, a computer-readable storage medium is provided, characterized in that the computer-readable storage medium stores computer-executable program instructions, and when the computer-executable program instructions are executed on a computer, the computer executes the method according to the first aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 A schematic diagram of a process of an impedance optimization method based on beam control provided in an embodiment of the present application;

[0020] Figure 2 A schematic plan view of a plurality of different first cells provided in an embodiment of the present application;

[0021] Figure 3 A schematic diagram of a target beam control device provided in an embodiment of the present application;

[0022] Figure 4 A schematic diagram of another impedance optimization method based on beam control provided in an embodiment of the present application;

[0023] Figure 5 A schematic diagram of a slowly varying model of an acoustic wave translator provided in an embodiment of the present application. DETAILED DESCRIPTION

[0024] In the following description, specific details such as specific system structures, technologies, etc. are provided for the purpose of illustration rather than limitation, so as to provide a thorough understanding of the embodiments of the present application. However, it should be clear to those skilled in the art that the present application may also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to prevent unnecessary details from obstructing the description of the present application.

[0025] It should be understood that when used in the present specification and the appended claims, the term "comprising" indicates the presence of described features, wholes, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or combinations thereof.

[0026] It should also be understood that the term “and / or” used in the specification and appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0027] As used in the specification and appended claims of this application, the term "if" can be interpreted as "when" or "uponce" or "in response to determining" or "in response to detecting", depending on the context. Similarly, the phrase "if it is determined" or "if [described condition or event] is detected" can be interpreted as meaning "uponce it is determined" or "in response to determining" or "uponce [described condition or event] is detected" or "in response to detecting [described condition or event]", depending on the context.

[0028] In addition, in the description of the present application specification and the appended claims, the terms "first", "second", "third", etc. are only used to distinguish the descriptions and cannot be understood as indicating or implying relative importance.

[0029] References to "one embodiment" or "some embodiments" etc. described in the specification of this application mean that one or more embodiments of the present application include specific features, structures or characteristics described in conjunction with the embodiment. Therefore, the statements "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. that appear in different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways. The terms "including", "comprising", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized in other ways.

[0030] As described in the background technology, there is a problem in the prior art that during beam propagation, the electromagnetic wave or the sound wave is reflected when passing through the interface between the background environment and the metamaterial device due to impedance mismatch. After the electromagnetic wave or the sound wave is reflected, the energy entering the metamaterial device is reduced, and the efficiency of energy coupling into the metamaterial device system is reduced.

[0031] In view of this, the present application provides an impedance optimization method based on beam control, by determining a first equivalent parameter matrix, which corresponds to the beam control function of a target beam control device, generating a first cellular database, selecting multiple first cells from the first cellular database according to a first slow-changing requirement and splicing the first cells to form a target beam control device, so that the control ability of the target beam control device over the first incident beam in the horizontal direction changes from weak to strong and then from strong to weak, and the reflectivity of the first incident beam changes from small to large and then from large to small, thereby increasing the efficiency of beam coupling into the device and realizing impedance optimization during beam propagation.

[0032] In some embodiments, Figure 1As shown, it is a schematic diagram of the process of an impedance optimization method based on beam control provided in an embodiment of the present application. The method may specifically include the following steps:

[0033] S101. Determine a first equivalent parameter matrix.

[0034] In some embodiments, the first equivalent parameter matrix corresponds to a beam control function of a target beam control device, wherein the beam control function includes shifting or rotating a first incident beam, and the type of the first incident beam includes an acoustic wave or an electromagnetic wave. The target beam control device includes a plurality of first partitions, the first partitions include a plurality of first cells, the first cells include one or more first structures and a first background material, and the one or more first structures are placed above the first background material.

[0035] S102: Generate a first cell database.

[0036] In some embodiments, the first impedance matrix and the first characteristic matrix of the first cell in the first cellular database vary within a first range. The first range is designed as needed. In practical applications, the first range should be as large as possible so that there are as many types of the first cells in the first cellular database as possible.

[0037] In some embodiments, the geometric parameters of the first structure are changed so that the first cell has a different first characteristic matrix, wherein when the first characteristic matrix of the first cell is different, the control capability of the first cell over the first incident beam is different.

[0038] For example, the first characteristic matrix can be changed by changing the number, shape, placement angle and other geometric parameters of the first structure in the first cell. This method is applicable to two-dimensional electromagnetic wave H polarization and sound wave. In some embodiments, such as Figure 2 As shown, it is a schematic diagram of a plan view of multiple different first cells, from Figure 2 It can be seen that the first structure in the first cell from the left is a cylinder with a circular cross-section, the first structure in the middle first cell is a cylinder with an elliptical cross-section, and the first structure in the first cell from the right includes three cylinders with elliptical cross-sections.

[0039] In some embodiments, the material of the first background material is changed so that the first cell has a different first impedance matrix, wherein when the first impedance matrix of the first cell is different, the reflectivity of the first incident beam is different.

[0040] It should be noted that the first equivalent parameter matrix is ​​the result of multiplying the first characteristic matrix by the first impedance matrix.

[0041] In some embodiments, the geometric parameters of the first structure of the first cell, the material of the first background material, the first characteristic matrix and the first impedance matrix corresponding to the first cell are stored in a first cell database.

[0042] After generating multiple first cells, the multiple first cells in the first cell database are classified. The classification method may be to classify the first cells having the same first characteristic matrix and different first impedance matrices, or to classify the first cells having the same first impedance matrix and different first characteristic matrices.

[0043] S103 , selecting a plurality of first cells from a first cell database according to a first slow variation requirement and splicing the first cells to form a target beam control device.

[0044] In some embodiments, the first gradual variation requirement includes that the second equivalent parameter matrix of the target beam control device is the same as the first equivalent parameter matrix, and the first gradual variation requirement also includes that the number of the first partitions is an odd number greater than 1.

[0045] S104: Arrange multiple first partitions in a horizontal direction.

[0046] In some embodiments, a plurality of the first partitions are arranged in the horizontal direction, so that the control capability of the target beam control device composed of the plurality of the first partitions in the horizontal direction over the first incident beam changes from weak to strong and then from strong to weak, and the reflectivity of the first incident beam changes from small to large and then from large to small. The reflectivity is the ratio of the energy of the first incident beam reflected from the outside to the total energy of the first incident beam when the first incident beam enters the target beam control device from the outside.

[0047] It should be noted that one or more of the first structures and the first background material of the first cell in the same first partition are respectively the same. The first partition located in the center of the target beam control device has the strongest control ability over the first incident beam and the largest reflectivity. The control ability gradually weakens from the center of the target beam control device to both sides in the horizontal direction, and the reflectivity gradually decreases from the center of the target beam control device to both sides in the horizontal direction.

[0048] Among them, the number of the first partitions is used to characterize the control ability of the target beam control device over the first incident beam and the slowness of the change of the reflectivity. When the number of the first partitions is larger, the control ability of the target beam control device over the first incident beam and the slowness of the change of the reflectivity are greater; when the number of the first partitions is smaller, the control ability of the target beam control device over the first incident beam and the slowness of the change of the reflectivity are smaller.

[0049] like Figure 3 FIG. 1 is a schematic diagram of a target beam control device provided by an embodiment of the present application. Figure 3 In the target beam control device, the target beam control device includes 25 cells and 5 first partitions. The first cells in each column of the target beam control device are the same, and each column of the first cells is a first partition, wherein the first partition located in the middle of the target beam control device is the axis of symmetry, and the multiple first partitions on both sides are symmetrical.

[0050] S105 . After controlling the first incident beam to be incident from the outside to the target beam control device in a horizontal direction, controlling the first incident beam to be emitted horizontally to the outside through the target beam control device.

[0051] In some embodiments, Figure 4 FIG. 1 is a flow chart of an impedance optimization method based on beam control provided in an embodiment of the present application. Figure 4 The flowchart shown is an introduction to the impedance optimization method based on beam control according to an embodiment of the present application when the first incident beam is an acoustic wave. The method may specifically include the following steps:

[0052] S201. Determine a first sound wave translation matrix according to a function of a sound wave shifter.

[0053] In some embodiments, the formula for the magnitude of the acoustic wave shifter's ability to shift the acoustic wave is as follows:

[0054]

[0055] Among them, b is the size of the acoustic wave shifter's ability to offset the sound wave, a is the offset coefficient of the acoustic wave shifter, x is the horizontal coordinate after coordinate transformation, and L is the width of the acoustic wave shifter. Among them, when the offset coefficient a is larger, it indicates that the acoustic wave shifter produces a greater offset for the sound waves passing through the inside of the device, and when the offset coefficient a is smaller, it indicates that the acoustic wave shifter produces a smaller offset for the sound waves passing through the inside of the device.

[0056] S202: Generate a first sound wave translation cell database.

[0057] In some embodiments, the first acoustic wave translation cell database is generated based on the size of the acoustic wave translation capability that the acoustic wave shifter needs to produce for the acoustic wave, so that the acoustic wave shifter composed of cells selected from the first acoustic wave translation cell database can achieve the acoustic wave translation capability corresponding to the offset coefficient.

[0058] S203, selecting a plurality of cells from the first sound wave translation cell database according to the first sound wave slow-changing control requirement of the sound wave shifter on the sound wave, and composing the cells into the sound wave shifter.

[0059] In some embodiments, the first sound wave slow variation control requirement includes the number of partitions in the sound wave translator, the size of the partitions, and the requirements for the cells constituting each partition.

[0060] The first acoustic wave slow-changing control requirement of the acoustic wave translator designed in the present embodiment also includes: at the interface between the external environment and the acoustic wave translator, weakening the transformation capability of acoustic wave propagation to achieve impedance optimization between the external environment and the acoustic wave translator, and selecting suitable cells in the middle part of the acoustic wave translator to allow the acoustic wave translator to have a stronger acoustic wave translation function.

[0061] Specifically, it is required that in the process of the sound wave passing through the sound wave shifter, the control ability of the sound wave of the sound wave shifter changes from small to large and then from large to small, and the impedance of the sound wave changes from small to large and then from large to small when passing through the sound wave shifter. By arranging different cells in different partitions of the sound wave shifter, the sound wave shifter not only realizes the control function of the sound wave, but also solves the problem of impedance mismatch when the sound wave enters the sound wave shifter from the external environment, and reduces the problem of large loss of sound wave energy caused by large impedance when the sound wave enters the sound wave shifter from the external environment.

[0062] like Figure 5 As shown, it is a schematic diagram of a slowly varying model of an acoustic wave translator provided in an embodiment of the present application. Figure 5 Curve B in the figure is the offset of the sound wave at x, and curve Z is the impedance of the sound wave in the process of passing through the sound wave shifter. X represents the position of the sound wave. From curve Z, it can be seen that the impedance of the sound wave changes from small to large and then from large to small in the process of passing through the sound wave shifter. From curve B, it can be seen that the offset change rate of the sound wave changes from small to large and then from large to small, which means that the sound wave shifter's offset ability of the sound wave changes from large to small and then from small to large.

[0063] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described or recorded in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0064] Those of ordinary skill in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0065] In the embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the modules or units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0066] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0067] The embodiments described above are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, a person skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. An impedance optimization method based on beam steering, It is characterized in that include: Determine a first equivalent parameter matrix, wherein the first equivalent parameter matrix corresponds to a beam control function of a target beam control device, wherein the target beam control device includes a plurality of first partitions, wherein the first partitions include a plurality of first cells, wherein the first cells include one or more first structures and a first background material, wherein the one or more first structures are placed above the first background material; Generate a first cellular database, wherein a first impedance matrix and a first characteristic matrix of a first cell in the first cellular database vary within a first range; selecting a plurality of the first cells from the first cell database according to a first slow variation requirement and splicing the first cells to form the target beam control device, wherein the first slow variation requirement includes that the second equivalent parameter matrix of the target beam control device is the same as the first equivalent parameter matrix, and the first slow variation requirement also includes that the number of the first partitions is an odd number greater than 1; Arrange the plurality of first partitions in the horizontal direction, so that the control capability of the target beam control device formed by splicing the plurality of first partitions on the first incident beam in the horizontal direction changes from weak to strong and then from strong to weak, and the reflectivity of the first incident beam changes from small to large and then from large to small, and the reflectivity is the ratio of the energy of the first incident beam reflected out of the outside world to the total energy of the first incident beam when the first incident beam enters the target beam control device from the outside world; After controlling the first incident beam to be incident from the outside to the target beam control device in a horizontal direction, controlling the first incident beam to be emitted horizontally to the outside through the target beam control device.

2. The method according to claim 1, It is characterized in that Also includes: Changing geometric parameters of the first structure so that the first cell has different first characteristic matrices, wherein when the first characteristic matrices of the first cell are different, the control capabilities of the first cell over the first incident beam are different; The material of the first background material is changed so that the first cell has a different first impedance matrix, wherein when the first impedance matrix of the first cell is different, the reflectivity of the first incident beam is different.

3. The method according to claim 1 or 2, It is characterized in that Also includes: The geometric parameters of the first structure of the first cell, the material of the first background material, the first characteristic matrix and the first impedance matrix corresponding to the first cell are stored in a first cell database.

4. The method according to claim 3, It is characterized in that One or more of the first structures and the first background material of the first cells in the same first partition are respectively the same.

5. The method according to claim 1, It is characterized in that The first subarea located in the center of the target beam control device has the strongest control capability over the first incident beam and the largest reflectivity; The control capability gradually decreases from the center of the target beam control device to both sides in the horizontal direction; The reflectivity gradually decreases from the center of the target beam control device to both sides in the horizontal direction.

6. The method according to claim 1, It is characterized in that The number of the first partitions is used to characterize the control capability of the target beam control device on the first incident beam and the slowness of the change of the reflectivity; Among them, when the number of the first partitions is larger, the control ability of the target beam control device over the first incident beam and the slowness of the change of the reflectivity are greater; when the number of the first partitions is smaller, the control ability of the target beam control device over the first incident beam and the slowness of the change of the reflectivity are smaller.

7. The method according to claim 1, It is characterized in that The beam steering function includes shifting or rotating the first incident beam.

8. The method according to any one of claims 1-2 or 4-7, It is characterized in that The type of the first incident beam includes an acoustic wave or an electromagnetic wave.

9. An impedance optimization device based on beam steering, It is characterized in that include: one or more processors; one or more memories; The one or more memories store one or more computer programs, which include instructions. When the instructions are executed by the one or more processors, the impedance optimization device performs the method according to any one of claims 1 to 8.

10. A computer-readable storage medium, It is characterized in that The computer-readable storage medium stores computer-executable program instructions, which, when executed on the computer, enable the computer to execute the method according to any one of claims 1 to 8.

Images