Heating device, chemical vapor deposition apparatus, and purging method

Abstract

The application discloses a heating device, a chemical vapor deposition device and a blowing method. The heating device is used for a chemical vapor deposition device and comprises a heater base, a fixed edge ring, a buffer cavity and a gap. The fixed edge ring is sleeved on the heater base. The buffer cavity and the gap are located between the fixed edge ring and the heater base. The gap comprises a horizontal gap and an inclined gap. One end of the horizontal gap is communicated with the buffer cavity, and the other end is communicated with the inclined gap. An opening end of the inclined gap is directed to the edge of a substrate. A plurality of hollow air plugs are arranged in the heater base in a circumferential interval around the edge of the heater base. A through hole is arranged in each air plug and used for air communication with the buffer cavity. The application can improve the blowing uniformity of the edge of the substrate.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor processing equipment, in particular to a heating device, a chemical vapor deposition equipment and a purge method. BACKGROUND

[0002] A chemical vapor deposition (CVD) or atomic layer deposition (ALD) reaction equipment has a carrier disc (substrate support assembly) on which a substrate is placed during deposition. A typical vapor deposition reactor structure has a reaction chamber surrounded by a reaction chamber sidewall, the reaction chamber includes a shaft structure, and a heating device on which the substrate is placed is installed at the top end of the shaft structure. The top of the reaction chamber includes a gas shower head for uniformly injecting reaction gas from a reaction gas source into the reaction chamber to process the substrate, and a gas extraction device is further included below the reaction chamber to control the internal pressure of the reaction chamber and extract waste gas generated during the reaction process.

[0003] When processing a substrate (substrate or wafer) using the above reaction equipment, edge purge and bottom purge functions are required to purge the substrate to reduce the accumulation of deposits on the edge of the substrate support pedestal and to protect the substrate support pedestal from the processing gas. The edge ring assembly can be maintained at a relatively low temperature to help minimize the deposits on the edge ring assembly; improve chamber performance, extend the time to maintain a clean environment, and prevent reaction gas from contacting the back of the wafer and contamination.

[0004] Through edge purge testing of the substrate, it is found that since the hardware of the existing heating device cannot be changed, the purge aperture depends on the assembly position of two components, and due to the existence of assembly tolerances, the purge aperture changes, causing uneven distribution of the edge purge gas of the substrate. At the same time, if it is necessary to adjust the distribution of the purge gas flow, the entire heater or the structure of the heating device needs to be changed, in order to obtain the ideal gas flow distribution, the structure needs to be changed every time the test is performed, which inevitably leads to an increase in cost, a long test waiting period, and it is difficult to flexibly control the wafer edge purge gas of the prior art. SUMMARY

[0005] The purpose of the present application is to provide a heating device, a chemical vapor deposition equipment and a purge method to achieve control of wafer edge effects and improve the uniformity of substrate edge purge.

[0006] In order to achieve the above purpose, the present application realizes the following technical solutions:

[0007] A heating device for a chemical vapor deposition apparatus, comprising: a heater base, on which a substrate to be processed can be carried; a fixed edge ring, which is sleeved on the heater base, a buffer cavity and a gap being located between the fixed edge ring and the heater base; the gap comprises a horizontal gap and an inclined gap, one end of the horizontal gap being communicated with the buffer cavity, the other end being communicated with the inclined gap, one end of the inclined gap being opened towards the edge of the substrate; a plurality of hollow air plugs are arranged in the heater base in a circumferential direction around the edge of the heater base, and a through hole is arranged in each air plug for air communication with the buffer cavity.

[0008] Optionally, a plurality of steps are arranged on the edge of the heater base and extend radially inwardly; the fixed edge ring is located on the steps, and the surface of the first step near the bottom surface of the heater base and the inner surface of the fixed edge ring form the buffer cavity; the surfaces of the other steps and the inner surface of the fixed edge ring form the gap.

[0009] Optionally, the width of the horizontal gap is the same as or different from the width of the inclined gap.

[0010] Optionally, the steps comprise three layers, which are referred to as a first step, a second step and a third step; each air plug is located below the first step, and the through hole of the air plug is communicated with the buffer cavity through the first step face of the first step; the second step face of the second step and the inner surface of the fixed edge ring form the horizontal gap; the side surface of the third step and the inner surface of the fixed edge ring form the inclined gap.

[0011] Optionally, the buffer cavity is in a circular ring shape.

[0012] Optionally, the horizontal gap is in a circular ring shape.

[0013] Optionally, the inclined gap is in a circular ring shape.

[0014] Optionally, the horizontal width of the horizontal gap ranges from 1.5 mm to 5 mm.

[0015] Optionally, the vertical thickness of the horizontal gap ranges from 0.2 mm to 1 mm.

[0016] Optionally, the hole wall of the through hole in each air plug is irregular.

[0017] Optionally, the through hole in each air plug is in a cylindrical shape.

[0018] Optionally, each of the air plugs is arranged obliquely in the heater base, and an end of the air plug close to the first step surface is away from the central axis of the heater base; and an end of the air plug away from the first step surface is close to the central axis of the heater base.

[0019] Optionally, an outer surface of each of the air plugs is in a cylindrical shape.

[0020] Optionally, each of the air plugs is made of aluminum.

[0021] Optionally, the device further comprises a movable edge ring sleeved on the fixed edge ring, and an inner diameter of the movable edge ring is smaller than that of the fixed edge ring.

[0022] In another aspect, the application further provides a chemical vapor deposition device, comprising a reaction chamber, and a gas shower head arranged at a top end of the reaction chamber, and a heating device as described above arranged below the gas shower head.

[0023] In other aspects, the application further provides a method for processing a substrate by using the chemical vapor deposition device as described above, characterized in that the method comprises: uniformly injecting reaction gas from a reaction gas source into the reaction chamber by using the gas shower head to realize processing of the substrate, and passing edge purge gas into the edge of the substrate to be processed through the through hole in each of the air plugs, the buffer chamber, the horizontal gap and the inclined gap; and adjusting the aperture of the through hole to adjust the flow rate and the direction of the gas flow to improve the uniformity of the edge purge.

[0024] The application has at least one of the following advantages:

[0025] The heating device for the chemical vapor deposition device provided by the application passes the edge purge gas into the buffer chamber through the through hole in the air plug, and the edge purge gas in the buffer chamber is sequentially purged through the horizontal gap and the inclined gap to the edge of the substrate, so as to prevent the deposition of the deposition gas on the back side of the edge of the substrate, and to solve the problem that the substrate is easily broken when taken out due to the adhesion of the substrate to the heating device, improve the performance of the chamber, prolong the time for maintaining the clean environment, and prevent the reaction gas from contacting the back side of the wafer and being contaminated.

[0026] The horizontal gap slows down the flow rate of the gas flow to the edge of the substrate, and the length and / or the width of the horizontal gap can be changed to achieve the required edge purge effect or requirement. When the distribution of the purge gas along the edge of the substrate is uneven due to the installation tolerance between different components, the horizontal gap is directly located between the inclined gap and the buffer chamber, and the thickness of the horizontal gap is not affected by the horizontal displacement of different components, so that the gas flow from the horizontal gap can be uniformly distributed along the edge of the substrate.

[0027] The buffer cavity is arranged to temporarily store the purge gas from the through hole, so that the gas flow rate and flow through the horizontal gap and the inclined gap can be kept stable at the edge of the substrate.

[0028] The inclined gap is arranged to ensure the integrity of the horizontal gap.

[0029] The through hole wall in the gas plug is irregular, so that by adjusting the aperture and / or shape of the through hole of the gas plug, the gas flow direction and gas flow rate into the buffer cavity can be changed, thereby further improving the uniformity of the deposited film at the edge of the substrate.

[0030] By adjusting the aperture and / or shape of the through hole of the gas plug, the process edge purge test is low in cost and short in test time, effectively improving the efficiency of the process edge purge test. BRIEF DESCRIPTION OF DRAWINGS

[0031] Figure 1 The main structure cross-sectional view of the heating device provided by an embodiment of the present application is shown in the figure;

[0032] Figure 2 The main structure cross-sectional view of the heating device provided by another embodiment of the present application is shown in the figure;

[0033] Figure 3 The main structure cross-sectional view of the heating device provided by another embodiment of the present application is shown in the figure;

[0034] Figure 4 The mass flow distribution curve of the purge gas during the horizontal gap test provided by an embodiment of the present application is shown in the figure;

[0035] Figure 5 The mass flow distribution curve of the purge gas during the horizontal gap test provided by another embodiment of the present application is shown in the figure. DETAILED DESCRIPTION

[0036] The heating device, chemical vapor deposition equipment, and purging method proposed in this invention will be further described in detail below with reference to specific embodiments. The advantages and features of this invention will become clearer from the following description. It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions, only for the purpose of conveniently and clearly illustrating the embodiments of this invention. Please refer to the accompanying drawings to make the objectives, features, and advantages of this invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationships, or adjustments to the size, without affecting the effects and objectives achieved by this invention, should still fall within the scope of the technical content disclosed in this invention.

[0037] Example 1

[0038] like Figure 1 As shown, this embodiment provides a heating device for a chemical vapor deposition (CVD) apparatus, including: a heater base 100, on which a substrate to be processed is supported; a fixing ring 101 sleeved on the heater base 100; a buffer cavity 111 and a gap located between the fixing ring 101 and the heater base 100; the gap includes a horizontal gap 1010 and an inclined gap 1011; one end of the horizontal gap 1010 communicates with the buffer cavity 111, and the other end communicates with the inclined gap 1011; one end of the inclined gap 1011 opens towards the edge of the substrate, that is, one end of the inclined gap 1011 opens towards the upper surface edge of the heater base 100.

[0039] A plurality of hollow air plugs 200 are circumferentially spaced within the heater base 100, surrounding its edge. Each air plug 200 has a through hole 2010 for allowing air to pass into the buffer cavity 111.

[0040] The heater base 100 has several steps extending radially inward along its edge; the fixing ring 101 is located on the steps, and the surface of the first step closest to the bottom surface of the heater base 100 forms the buffer cavity 111 with the inner surface of the fixing ring 101. The surfaces of the other steps form the gaps with the inner surface of the fixing ring 101.

[0041] In the embodiment, the steps include three layers, which are denoted as a first step 10, a second step 11 and a third step 12; the inner surface of the part of the fixed edge ring 101 corresponding to the second step 11 is away from the vertical side of the second step 11, so that when the fixed edge ring 101 is sleeved on the heater base 100, a buffer cavity 111 can be formed, each of the gas plugs 200 is located below the first step 10, the upper surface of the first step 10 is a first step surface, the gas plug 200 is in communication with the buffer cavity 111 through the first step surface of the first step 10; the upper surface of the second step 11 is a second step surface, the second step surface and the inner surface of the fixed edge ring 101 form the horizontal gap 1010; the third step 12 has an inclined side, which and the inner surface of the fixed edge ring 101 form the inclined gap 1011.

[0042] In the embodiment, each of the gas plugs 200 is arranged obliquely in the heater base 100, one end of the gas plug 200 close to the first step surface is away from the central axis of the heater base 100; one end of the gas plug 200 away from the first step surface is close to the central axis of the heater base 100. Such a placement position is to facilitate the preparation of the gas plug 200 in the first step 10 of the heater base 100. Due to the difference in arrangement of other parts of the lower part of the heater base 100, the gas plug arranged in this way can more flexibly meet the input requirement of the purge gas. Each of the gas plugs 200 is provided with a sealing element 300 at the end port close to the bottom of the first step 10. In other embodiments, the gas plug 200 can also be arranged vertically.

[0043] In the embodiment, the buffer cavity 111 is a whole annular shape, the horizontal gap 1010 is a whole annular shape, and the inclined gap 1011 is a whole annular shape, so as to ensure uniform gas purging of the edge of the substrate, but the present application is not limited thereto, the buffer cavity 111, the horizontal gap 1010 and the inclined gap 1011 can be customized according to the shape of the heater base 100.

[0044] In the embodiment, the horizontal width of the horizontal gap 1010 ranges from 1.5 mm to 5 mm. The vertical thickness of the horizontal gap 1010 is 0.2 mm-1 mm. The width of the horizontal gap 1010 is the same as or different from the width of the inclined gap 1011.

[0045] Therefore, in the embodiment, the thickness of the horizontal gap 1010 does not change due to the relative movement of the fixed edge ring 101 and the heater base 100 in the horizontal direction, which is inevitable during assembly. If the thickness of the horizontal gap 1010 does not change, the flow rate of the purge gas flowing out of the buffer cavity 111 through the horizontal gap 1010 will be basically stable. Even if the thickness of the inclined gap 1011 changes, it will not affect the distribution of the edge purge gas of the substrate, because the pressure difference from the buffer cavity 111 to the horizontal gap 1010 is relatively large, and the pressure difference from the horizontal gap 1010 to the inclined gap 1011 is very small and can be ignored. The setting of the horizontal gap 1010 unifies the flow rate of the gas flow to the edge of the substrate, and by changing the length and / or width of the horizontal gap 1010, the required edge purge effect or requirement can be achieved.

[0046] The buffer cavity 111 is provided to temporarily store the purge gas from the through hole 2010, so that the flow rate and flow of the gas flow through the horizontal gap 1010 and the inclined gap 1011 can be kept stable at the edge of the substrate. The setting of the inclined gap 1011 can ensure the integrity of the horizontal gap 1010 and adjust the direction of the purge gas at the edge of the substrate.

[0047] In the embodiment, each of the gas plugs 200 is made of aluminum material. The outer surface of each of the gas plugs 200 is cylindrical, and the hole wall of the through hole 2010 in each of the gas plugs 200 is irregular. Specifically, in the embodiment, the through hole 2010 in each of the gas plugs 200 is cylindrical as a whole. Each of the through holes 2010 is coaxially arranged with the corresponding gas plug 200. The gas plug 200 is movably connected with the heater base 100, so that during the purge test, the gas plug 200 with different through hole 2010 shape can be used to obtain appropriate purge gas distribution.

[0048] The embodiment further comprises a movable edge ring 102 sleeved on the fixed edge ring 101, and the inner diameter of the movable edge ring 102 is smaller than the inner diameter of the fixed edge ring 101. One of the functions of the movable edge ring 102 is to facilitate the assembly of the heating device, and the other function is that because the inner diameter of the movable edge ring 102 is smaller than the inner diameter of the fixed edge ring 101, when the movable edge ring 102 is assembled onto the fixed edge ring 101, the inner diameter of the movable edge ring 102 can form an edge above the inclined gap 1011, so that the edge purge gas flowing out of the inclined gap 1011 will blow in the horizontal direction towards the edge of the substrate, rather than upwards, improving the purge effect and improving the cleanliness of the substrate surface.

[0049] The heating device for the chemical vapor deposition equipment provided by the embodiment is characterized in that the edge purge gas is introduced into the buffer cavity 111 through the through hole 2010 in the gas plug 200, and the edge purge gas in the buffer cavity 111 is sequentially purged to the edge of the substrate through the horizontal gap 1010 and the inclined gap 1011, so as to prevent the deposition gas from being deposited at the back side of the edge of the substrate, and to solve the problem that the substrate is easily broken when being taken out due to the adhesion of the substrate to the heating device, improve the chamber performance, prolong the time of keeping the clean environment, and prevent the reaction gas from contacting the back side of the wafer and being contaminated.

[0050] Embodiment two

[0051] As shown in Figure 2 the embodiment, the difference between the embodiment and the embodiment one is that the shape of the through hole 2011 in each gas plug 200 is different from the shape of the through hole provided in the embodiment one.

[0052] In the embodiment, the through hole 2011 is in the shape of V-shaped bending as a whole, and specifically includes a first bending section and a second bending section connected with each other, the first bending section and the second bending section are respectively in the shape of cylinder, the first bending section is coaxially arranged with the gas plug 200, one end of the second bending section is connected with the first bending section, and the other end of the second bending section is arranged close to the central axis of the gas plug 200, so that the direction of the gas flow introduced into the buffer cavity 111 can be changed, and the flow rate of the edge purge gas introduced into the substrate can be changed, so as to facilitate the adjustment of the purging effect at the corresponding edge of the substrate.

[0053] Embodiment three

[0054] As shown in Figure 3 the embodiment, the difference between the embodiment and the embodiment one is that the arrangement position of each gas plug 200 is different from the arrangement position of the gas plug in the embodiment one.

[0055] In the embodiment, the gas plug 200 is vertically arranged inside the edge of the heater base 100; specifically, the gas plug 200 is arranged below the second step 11 and penetrates through the first step 10.

[0056] The through hole 2011 in each gas plug 200 is in the shape of cylinder and coaxially arranged with the gas plug 200, and the port 2012 at one end of the through hole 2011 communicated with the buffer cavity 111 is narrowed, so that the purging gas from below can be blocked by the narrower port 2012, so as to reduce the turbulence in the buffer cavity, ensure the stability of the gas flow of the edge purge gas in the buffer cavity 111, and improve the uniformity of the purging to the edge of the substrate.

[0057] Figure 4The figure shows the mass flow rate distribution curve of the purge gas during a horizontal gap test according to an embodiment of the present invention. The horizontal axis represents the position coordinates of different angles at the substrate edge, and the vertical axis represents the mass flow rate of the purge gas. The horizontal gap is selected as 1.5 mm wide and 0.2 mm thick. Non-uniformity is defined as the percentage difference between the maximum and minimum mass flow rates at different locations and the minimum value. It can be seen that within the substrate range of 0 to 30 mm, the maximum mass flow rate of the purge gas is 0.345, and the minimum is 0.339, with a non-uniformity of 2.1%. The curve fluctuation is due to the maximum value being reached near the gas plug and the minimum value being reached between the two gas plugs. It can be seen that using the technical solution of the present invention can significantly reduce non-uniformity.

[0058] like Figure 5 As shown, this is a mass flow rate distribution curve of the purge gas during a horizontal gap test provided by another embodiment of the present invention. The horizontal gap is selected to be 5 mm wide and 1 mm thick. Within the range of 0 to 30 mm on the substrate, the maximum mass flow rate of the purge gas is 0.3447, the minimum is 0.3405, and the non-uniformity is 1.2%. It can be seen that by adjusting the width and thickness of the horizontal gap, the uniformity of the purge gas distribution at the edge of the substrate can be adjusted.

[0059] Therefore, the uniformity of edge blowing can be adjusted by adjusting the diameter of the through hole and / or the width of the horizontal gap.

[0060] In another aspect, this embodiment also provides a chemical vapor deposition apparatus, including: a reaction chamber; a gas spray head is disposed at the top of the reaction chamber, and a heating device as described above is disposed below the gas spray head.

[0061] In other aspects, this embodiment also provides a method for processing a substrate using the chemical vapor deposition equipment described above, including: uniformly injecting reactive gas from a reactive gas source into a reaction chamber using a gas spray head to process the substrate; and introducing edge-blowing gas into the edge of the substrate to be processed through a through hole in each of the gas plugs, the buffer chamber, the horizontal gap, and the inclined gap; adjusting the aperture of the through hole to adjust the flow rate and direction of the airflow to improve the uniformity of the edge-blowing of the substrate.

[0062] In summary, the heating device for a chemical vapor deposition (CVD) apparatus provided in this embodiment introduces edge-purge gas into the buffer chamber through a through-hole in a gas plug. The edge-purge gas in the buffer chamber sequentially purges the edge of the substrate through a horizontal gap and an inclined gap, preventing deposition gas from depositing on the back side of the substrate edge. This solves the problem of the substrate easily breaking during wafer removal due to sticking to the heating device, improves chamber performance, extends the time of maintaining a clean environment, and prevents reactive gases from contacting the back side of the wafer and causing contamination.

[0063] The horizontal gap slows down the gas flow rate to the edge of the substrate, and the desired edge purge effect or requirement can be achieved by changing the length and / or width of the horizontal gap. When the purge gas is distributed unevenly along the edge of the substrate due to the installation tolerance between different components, the gas flow rate from the horizontal gap can be kept evenly distributed along the edge of the substrate because the horizontal gap is directly located between the inclined gap and the buffer cavity, and the thickness of the horizontal gap is not affected by the horizontal displacement of different components.

[0064] The buffer cavity is configured to temporarily store the purge gas from the through hole, so that the gas flow rate and flow rate through the horizontal gap and the inclined gap can be kept stable at the edge of the substrate.

[0065] The inclined gap is configured to ensure the integrity of the horizontal gap.

[0066] The through hole wall in the gas plug provided by the embodiment is irregular, so that by adjusting the aperture and / or shape of the through hole of the gas plug, the gas flow direction and gas flow rate to the buffer cavity can be changed, thereby further improving the uniformity of the deposited film at the edge of the substrate.

[0067] By adjusting the aperture and / or shape of the through hole of the gas plug, the process edge purge test is low in cost and short in test time, and the efficiency of the process edge purge test is effectively improved.

[0068] It should be noted that in this document, the terms "comprising", "containing", or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or further includes elements inherent to such a process, method, article or device. Without more limitations, the element defined by the statement "comprising a" does not exclude the presence of additional identical elements in the process, method, article or device comprising the element.

[0069] In the description of the present application, it should be understood that the terms "center", "height", "thickness", "upper", "lower", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0070] In the description of the application, unless otherwise clearly specified and limited, the terms "mounting", "connection", "linking", "fixing" should be understood in a broad sense, for example, can be fixed connection, can also be detachable connection, or integral; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction relationship of two elements. For those skilled in the art, the specific meaning of the above terms in the application can be understood according to the specific circumstances.

[0071] In the present application, unless otherwise clearly specified and limited, "on" or "under" of the first feature to the second feature can include that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, "on", "above" and "above" of the first feature to the second feature include that the first feature is directly above and obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. "Below", "below" and "below" of the first feature to the second feature include that the first feature is directly below and obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0072] Although the content of the present application has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present application. After reading the above content, various modifications and alternatives of the present application will be obvious to those skilled in the art. Therefore, the protection scope of the present application should be defined by the appended claims.

Claims

1. A heating device for a chemical vapor deposition apparatus, characterized by, include: A heater base, on which a substrate to be processed can be held; A fixed edge ring is sleeved on the heater base, and a buffer cavity and a gap are located between the fixed edge ring and the heater base; The gap includes a horizontal gap and an inclined gap. One end of the horizontal gap is connected to the buffer cavity, and the other end is connected to the inclined gap. One end of the inclined gap opens towards the edge of the substrate. The heater base has several steps extending radially inward along its edge. The fixed edge ring is located on several layers of steps, and the surface of the first step closest to the bottom surface of the heater base and the inner surface of the fixed edge ring form the buffer cavity. The gap is formed between the surface of the other steps and the inner surface of the fixed edge ring; Several hollow air plugs are circumferentially spaced within the heater base, surrounding the edge of the heater base; Each of the air plugs is provided with a through hole for air to be introduced into the buffer chamber.

2. The heating device of claim 1, wherein The width of the horizontal gap and the width of the inclined gap may be the same or different.

3. The heating device of claim 2, wherein The steps consist of three levels, referred to as the first step, the second step, and the third step; Each of the air plugs is located below the first step, and the air plug communicates with the buffer cavity through the first step surface of the first step; The second step surface of the second step and the inner surface of the fixed edge ring form the horizontal gap; The side of the third step and the inner surface of the fixed edge ring form the inclined gap.

4. The heating device of claim 1, wherein The buffer cavity is circular.

5. The heating device of claim 1, wherein The horizontal gap is annular.

6. The heating device of claim 1, wherein, The inclined gap is annular.

7. The heating device of claim 1, wherein The horizontal width of the horizontal gap ranges from 1.5mm to 5mm.

8. The heating device of claim 7, wherein The vertical thickness of the horizontal gap ranges from 0.2mm to 1mm.

9. The heating device of claim 1, wherein, The walls of the through holes in each of the aforementioned air plugs are irregular in shape.

10. The heating device of claim 1, wherein, The through-hole in each of the aforementioned air plugs is cylindrical.

11. The heating device of claim 3, wherein Each of the air plugs is inclinedly disposed within the heater base, with one end of the air plug near the first stepped surface being away from the central axis of the heater base; The end of the air plug away from the first stepped surface is close to the central axis of the heater base.

12. The heating device of claim 1, wherein, The outer surface of each of the gas plugs is cylindrical.

13. The heating device of claim 1, wherein, Each of the aforementioned gas plugs is made of aluminum.

14. The heating device of claim 1, wherein Also includes: A movable side ring is fitted onto the fixed side ring, and the inner diameter of the movable side ring is smaller than the inner diameter of the fixed side ring.

15. A chemical vapor deposition apparatus characterized by comprising: include: reaction chamber; A gas spray head is provided at the top of the reaction chamber, and a heating device as described in any one of claims 1 to 14 is provided below the gas spray head.

16. A method of processing a substrate using the chemical vapor deposition apparatus of claim 15, wherein, include: A gas spray head is used to uniformly inject reactive gas from the reactive gas source into the reaction chamber to process the substrate. Edge blowing gas is introduced into the edge of the substrate to be processed through the through hole in each of the gas plugs, the buffer chamber, the horizontal gap and the inclined gap. Adjusting the aperture of the through hole to regulate the airflow velocity and direction improves the uniformity of the substrate edge cleaning.

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