Ion beam current acceleration tube device
By designing an ion beam acceleration tube device and using acceleration, focusing, and suppression electrodes to adjust the beam state, the problem of insufficient control over injection depth and uniformity in existing technologies has been solved, achieving high energy transmission and uniformity control, and preventing metal ion contamination and high radiation.
Patent Information
- Application Number
- CN202111656352.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-12-30
- Publication Date
- 2025-12-12
- Estimated Expiration
- 2041-12-30
AI Technical Summary
Existing ion implanters struggle to simultaneously achieve high-precision implantation depth and uniformity control when increasing chip integration and varying implantation angles, particularly in terms of beam state and energy regulation.
Design an ion beam accelerating tube device, comprising an accelerating electrode, a focusing electrode, and a suppressing electrode. The acceleration, focusing, and diffusion width of the beam are adjusted by applying different voltages. Current backflow and partial discharge are prevented by an insulating ring and a discharge resistor. Graphite electrodes are used to prevent metal ion contamination.
It achieves high-energy transmission and uniformity control of ion beams, improves the implantation depth and uniformity of ion doping processes, and prevents metal ion contamination and high radiation effects.
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Figure CN116417316B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to semiconductor device manufacturing equipment, in particular to an ion beam flow accelerating tube device. BACKGROUND
[0002] The development of microelectronic technology is inseparable from the rapid progress of related manufacturing equipment and technology, and ion implantation is a key technology in integrated circuit production. Ion implanters are devices that extract ions generated by ion sources, accelerate them through electric and magnetic fields, screen them, adjust their beam distribution shape, and inject them into silicon wafers at a certain angle and energy. With the increasing integration of chips, wafer implantation dose is increasing, and implantation angle is changing, so the comprehensive requirements for ion implanters are becoming higher and higher. It is the continuous improvement of key semiconductor equipment, including ion implanters, that has promoted the rapid development of integrated circuit devices. With the continuous improvement of semiconductor process technology, higher requirements are placed on ion implantation doping, mainly including control of implantation depth and implantation uniformity. In order to improve the precision of ion implantation depth and the uniformity of ion implantation silicon wafer, the beam state of the ion implanter can be improved, and the energy of the beam can be increased.
[0003] A large number of experiments have shown that increasing the transmission energy of the ion beam can increase the implantation depth of the ion implantation process, and that the controllability of implantation uniformity can be improved by effectively changing the pinch and diffusion width of the beam during beam transmission. This requires the design of an accelerating tube device that has both acceleration and adjustable beam diffusion width functions. SUMMARY
[0004] The technical problem to be solved by the present application is to provide an accelerating tube device that has both acceleration and adjustable beam diffusion width functions, which requires a corresponding constant voltage power supply and graphite electrodes designed on the accelerating tube to realize these functions.
[0005] To solve the above technical problems, the technical solution adopted by the present application is: an ion beam flow accelerating tube device, on which an accelerating voltage is applied, and ion beam flow is accelerated therein; an accelerating tube middle component, on which a focusing voltage is applied, and ion beam flow is focused therein; an accelerating tube outlet component, on which a suppression voltage is applied, and secondary electrons in the ion beam flow will be hindered by the electric field force of the suppression electrode and cannot pass through, avoiding the high radiation influence caused by secondary electrons, and also performing a certain focusing effect on the beam flow; a focusing silicon stack as a connecting piece connecting the focusing power supply and the accelerating tube middle component, which can effectively prevent current backflow; a discharge resistor as a connecting piece connecting the accelerating tube middle component and the focusing power supply, which can effectively prevent the phenomenon of excessive loop current; an accelerating tube support welding piece that can support and fix the accelerating tube; and an accelerating tube overall protective cover made of silicone rubber material, which can effectively prevent the local discharge phenomenon on the surface of the accelerating tube.
[0006] The accelerating tube entrance electrode assembly is provided with an accelerating electrode flange at the entrance end, and accelerating electrode graphite and accelerating tube entrance protection graphite are arranged on the front and back sides of the accelerating electrode flange.
[0007] The accelerating tube entrance electrode assembly is provided with a first focusing electrode flange at the exit end, and two first focusing electrode graphites are arranged on the upper and lower sides of the first focusing electrode flange.
[0008] The accelerating tube entrance electrode assembly is provided with a first insulating ring between the accelerating electrode flange and the first focusing electrode flange.
[0009] The accelerating tube entrance electrode assembly is provided with 585×5.3 O-shaped sealing rings between the accelerating electrode flange, the first focusing electrode flange and the first insulating ring.
[0010] The accelerating tube middle assembly is provided with a second focusing electrode flange at the entrance end.
[0011] The accelerating tube middle assembly is provided with a third focusing electrode flange at the exit end, and a focusing electrode fixing rod is arranged on the left and right sides of the third focusing electrode flange, and a second focusing electrode graphite is arranged on the focusing electrode fixing rod.
[0012] The accelerating tube middle assembly is provided with a second insulating ring between the second focusing electrode flange and the third focusing electrode flange.
[0013] The accelerating tube entrance electrode assembly is provided with 585×5.3 O-shaped sealing rings between the second focusing electrode flange, the third focusing electrode flange and the second insulating ring.
[0014] The accelerating tube exit assembly is provided with a suppression electrode flange at the entrance end.
[0015] The accelerating tube exit assembly is provided with a first ground electrode flange at the exit end.
[0016] The accelerating tube exit assembly is provided with a third insulating ring between the suppression electrode flange and the first ground electrode flange.
[0017] The accelerating tube exit assembly is provided with 585×5.3 O-shaped sealing rings between the suppression electrode flange, the first ground electrode flange and the third insulating ring.
[0018] The first ground electrode flange is provided with an insulating ceramic column on the upper and lower sides of the entrance side, each insulating ceramic column is provided with a first suppression electrode support, and each suppression electrode support is provided with a first suppression electrode graphite. The first ground electrode flange is provided with an insulating ceramic column on the left and right sides of the entrance side, each insulating ceramic column is provided with a second suppression electrode support, and each suppression electrode support is provided with a second suppression electrode graphite.
[0019] The first ground electrode flange has a ground electrode graphite installed on its inlet side and an outlet graphite installed on its internal channel side.
[0020] The first ground electrode flange has a second ground electrode flange installed on its outlet side, and the second ground electrode flange is equipped with two 90° water connectors; an O-ring is installed between the second ground electrode flange and the first ground electrode flange.
[0021] In the accelerator tube outlet assembly, four high-voltage output connectors are installed on the outside of the first ground electrode flange, and each high-voltage output connector is connected to the first suppression electrode support and the second suppression electrode support through a conductive spring. Attached Figure Description
[0022] Figure 1 Layout diagram of the accelerator tube device;
[0023] Figure 2 Exploded and isometric views of the accelerator tube inlet electrode assembly;
[0024] Figure 3 Exploded view and isometric view of the intermediate electrode assembly of the accelerator tube;
[0025] Figure 4 Exploded view and isometric view of the accelerator tube outlet assembly;
[0026] Figure 5 Distribution diagram of the accelerator tube electrode assembly. Detailed Implementation
[0027] like Figure 1 As shown, the ion beam accelerator tube device of the present invention includes: an accelerator tube inlet electrode assembly; an accelerator tube intermediate assembly; an accelerator tube outlet assembly; a focusing silicon stack; a discharge resistor; an accelerator tube support welding component 5; and an overall protective cover 32 made of silicone rubber. The accelerator tube support welding component can support and fix the accelerator tube; the overall protective cover 32 made of silicone rubber can effectively prevent partial discharge phenomena on the surface of the accelerator tube.
[0028] like Figure 2 As shown, the accelerator tube inlet electrode assembly 1 has an accelerator electrode flange 7 installed at its inlet end, which is used to fix the accelerator tube device to the high-voltage chamber of the front-end component. The acceleration voltage is applied to the high-voltage chamber and transmitted to the accelerator electrode through the accelerator electrode flange 7. Accelerator electrode graphite 8 and accelerator tube inlet protective graphite 9 are respectively installed on the front and rear sides of the accelerator electrode flange 7. In addition to being used as electrodes, the graphite parts can also prevent the beam from directly sputtering onto the metal flanges, thus avoiding metal ion contamination.
[0029] like Figure 2As shown in the figure, in the entrance electrode assembly 1 of the acceleration tube, one end of the focusing silicon pile (which can effectively prevent current backflow) 4 is connected to the negative electrode of the focusing power supply for introducing the focusing voltage, and the other end is connected to the first focusing electrode flange 11. Two first focusing electrode graphite blocks 10 are respectively arranged on the upper and lower sides of the first focusing electrode flange 11. The two first focusing electrode graphite blocks 10 arranged on the upper and lower sides can adjust the vertical width of the beam. In addition to being used as an electrode, the graphite block can also prevent the beam from directly sputtering on the metal flanges, thereby avoiding metal ion pollution.
[0030] As shown in the figure, Figure 2 As shown in the figure, in the entrance electrode assembly 1 of the acceleration tube, one end of the discharge resistor 6 (which can reduce the current in the focusing circuit) is connected to the ground electrode of the focusing power supply, and the other end is connected to the first focusing electrode flange 11, forming a closed loop with the focusing silicon pile 4 and the focusing power supply.
[0031] As shown in the figure, Figure 2 As shown in the figure, the beam enters from the side of the acceleration electrode flange 7 in the entrance electrode assembly 1 of the acceleration tube and flows out from the side of the first focusing electrode flange 11. When the ion beam passes through the vacuum cavity channel of the assembly, it not only accelerates and gains energy but also adjusts the beam width in the vertical direction by adjusting the voltage value of the focusing power supply. A first insulating ring 12 is arranged between the acceleration electrode flange 7 and the first focusing electrode flange 11 to isolate the acceleration voltage and the focusing voltage.
[0032] As shown in the figure, Figure 3 As shown in the figure, in the middle electrode assembly 2 of the acceleration tube, one end of the focusing silicon pile 4 (which can effectively prevent current backflow) is connected to the negative electrode of the focusing power supply for introducing the focusing voltage, and the other end is connected to the third focusing electrode flange 13. Two focusing electrode fixing rods 17 are respectively arranged on the left and right sides of the third focusing electrode flange 13, and a second focusing electrode graphite block 14 is arranged on the focusing electrode fixing rod 17. The two second focusing electrode graphite blocks 14 arranged on the upper and lower sides can adjust the horizontal width of the beam. In addition to being used as an electrode, the graphite block can also prevent the beam from directly sputtering on the metal flanges, thereby avoiding metal ion pollution.
[0033] As shown in the figure, Figure 3 As shown in the figure, in the middle electrode assembly 2 of the acceleration tube, one end of the discharge resistor 6 (which can reduce the current in the focusing circuit) is connected to the ground electrode of the focusing power supply, and the other end is connected to the third focusing electrode flange 13, forming a closed loop with the focusing silicon pile 4 and the focusing power supply.
[0034] As shown in the figure, Figure 3As shown, the beam current enters from the side of the second focusing electrode flange 15 in the middle electrode assembly 2 of the accelerating tube, and flows out from the side of the third focusing electrode flange 13. When the ion beam passes through the vacuum cavity passage of the assembly, the beam width in the left-right (horizontal) direction can be adjusted by adjusting the voltage value of the focusing power supply; the second insulating ring 16 is arranged between the second focusing electrode flange 15 and the third focusing electrode flange 13, and is used to isolate the two focusing voltages in the left-right and up-down directions.
[0035] As shown in the drawing, Figure 4 The accelerating tube outlet assembly 3 is provided with an inhibiting electrode flange 18 at the inlet end and a first ground electrode flange 19 at the outlet end. The third insulating ring 20 is arranged between the inhibiting electrode flange 18 and the first ground electrode flange 19, and is used to isolate the voltage values of the inhibiting electrode and the focusing electrode.
[0036] As shown in the drawing, Figure 4 The first ground electrode flange 19 is provided with an insulating ceramic column 24 on the inlet side in the up-down direction. The first inhibiting electrode support 25 is arranged on each insulating ceramic column 24, and the first inhibiting electrode graphite 26 is arranged on each first inhibiting electrode support 25.
[0037] As shown in the drawing, Figure 4 The first ground electrode flange 19 is provided with an insulating ceramic column 24 on the inlet side in the left-right direction. The second inhibiting electrode support 27 is arranged on each insulating ceramic column 24, and the second inhibiting electrode graphite 28 is arranged on each second inhibiting electrode support 27.
[0038] As shown in the drawing, Figure 4 The first ground electrode flange 19 is provided with a ground electrode graphite 29 on the inlet side, and an outlet graphite 30 on the inner passage side. In addition to being used as an electrode, the graphite member can also prevent the beam current from directly sputtering on the metal material flanges, thereby avoiding the generation of metal ion pollution.
[0039] As shown in the drawing, Figure 4 The first ground electrode flange 19 and the second ground electrode flange 22 are provided with cooling water passages, which are used for cooling the ground electrode of the accelerating tube to avoid damage caused by high temperature. The second ground electrode flange 22 is provided with two 90° water connectors 21, which are used for water circulation.
[0040] As shown in the drawing, Figure 4 The first ground electrode flange 19 is provided with four high-voltage output connectors 23 on the outer side. Each high-voltage output connector 23 is connected to the first inhibiting electrode support 25 and the second inhibiting electrode support 27 through the conductive spring 31. One end of the high-voltage output connector 23 is connected to the negative electrode of the inhibiting power supply, and the other end is connected to the first ground electrode flange 19 through a sealing ring (the sealing ring is used for vacuum sealing).
[0041] As shown in the drawing, Figure 4As shown, the beam enters from the suppression electrode flange 18 side of the acceleration tube outlet electrode assembly 3 and flows out from the second ground electrode flange 22 side into the parallel lens.
[0042] like Figure 5 As shown, the ion beam passes sequentially through the accelerating electrode 8 of the accelerating tube, and has focusing electrodes 14 and 10 distributed vertically and horizontally, as well as suppression electrodes 26 and 28 distributed vertically and horizontally. This can improve the transmission energy of the ion beam and deepen the implantation depth of the ion doping process. At the same time, by adjusting the output voltage of the focusing power supply and the suppression power supply, the diffusion width during the beam transmission process can be effectively changed, thereby improving the controllability of the implantation uniformity.
Claims
1. An ion beam acceleration tube device, comprising an acceleration tube inlet electrode assembly, an acceleration electrode flange is arranged at the inlet end, an acceleration electrode graphite and an acceleration tube inlet protection graphite are arranged at the front and back sides of the acceleration electrode flange respectively, a first focusing electrode flange is arranged at the outlet end, two first focusing electrode graphites are arranged at the upper and lower sides of the first focusing electrode flange respectively, an acceleration voltage is applied to the acceleration tube inlet electrode assembly, and ion beam is accelerated therein. The accelerating tube middle assembly is provided with a second focusing electrode flange at the inlet end and a third focusing electrode flange at the outlet end, and the third focusing electrode flange is provided with a focusing electrode fixing rod on each side, and the focusing electrode fixing rod is provided with a second focusing electrode graphite. The accelerating tube outlet assembly is provided with an inhibiting electrode flange at the inlet end and a first ground electrode flange at the outlet end, and the inhibiting voltage is applied to the accelerating tube outlet assembly to inhibit the secondary electrons in the ion beam from passing through the inhibiting electrode flange, thereby avoiding the high radiation caused by the secondary electrons and focusing the ion beam. The focusing silicon stack is used as a connecting piece between the focusing power supply and the accelerating tube middle assembly to effectively prevent current backflow, and the discharge resistor is used as a connecting piece between the accelerating tube middle assembly and the focusing power supply to effectively prevent excessive loop current. The accelerating tube support welding piece can support and fix the accelerating tube, and the accelerating tube overall protection cover made of silicone rubber can effectively prevent the local discharge phenomenon on the surface of the accelerating tube.
2. The ion beam current accelerating tube apparatus of claim 1, wherein, The first insulating ring is arranged between the accelerating electrode flange and the first focusing electrode flange.
3. The ion beam current accelerating tube apparatus of claim 1, wherein, 585×5.3 O-shaped sealing rings are arranged between the accelerating electrode flange, the first focusing electrode flange and the first insulating ring.
4. The ion beam current accelerating tube apparatus of claim 1, wherein, The second insulating ring is arranged between the second focusing electrode flange and the third focusing electrode flange.
5. The ion beam current accelerating tube apparatus of claim 1, wherein, 585×5.3 O-shaped sealing rings are arranged between the second focusing electrode flange, the third focusing electrode flange and the second insulating ring.
6. The ion beam current accelerating tube apparatus of claim 1, wherein, The third insulating ring is arranged between the inhibiting electrode flange and the ground electrode flange.
7. The ion beam current accelerating tube apparatus of claim 1, wherein, 585×5.3 O-shaped sealing rings are arranged between the inhibiting electrode flange, the ground electrode flange and the third insulating ring.
8. The ion beam current accelerating tube apparatus of claim 6, wherein, The first ground electrode flange is provided with an insulating ceramic column on each side of the inlet side, each insulating ceramic column is provided with a first inhibiting electrode support, and each first inhibiting electrode support is provided with a first inhibiting electrode graphite.
9. The ion beam current accelerating tube apparatus of claim 6, wherein, The first ground electrode flange is provided with an insulating ceramic column on each side of the inlet side, each insulating ceramic column is provided with a second inhibiting electrode support, and each second inhibiting electrode support is provided with a second inhibiting electrode graphite.
10. The ion beam current accelerating tube apparatus of claim 6, wherein, The first ground electrode flange is provided with a ground electrode graphite at the inlet side.
11. The ion beam current accelerating tube apparatus of claim 6, wherein, The first ground electrode flange is provided with an outlet graphite at the inner passage side.
12. The ion beam current accelerating tube apparatus of claim 6, wherein, The first ground electrode flange is provided with a second ground electrode flange at the outlet side.
13. The ion beam current accelerating tube apparatus of claim 12, wherein, The second ground electrode flange is provided with two 90° water joints, and the second ground electrode flange is provided with an O-shaped sealing ring between the first ground electrode flange.
14. The ion beam current accelerating tube apparatus of claim 12, wherein, The first ground electrode flange is provided with four high-voltage output joints on the outer side, and each high-voltage output joint is connected to the first inhibiting electrode support and the second inhibiting electrode support through a conductive spring.
Citation Information
Patent Citations
Focused silicon stack device of beam ion implanter
CN106653540A
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CN113169004A