Plating method and plating apparatus

Abstract

The present application provides a technology capable of removing bubbles adhering to the pores of an ion resistor. A plating method includes: in a state where an anode and an ion resistor are immersed in a plating solution, stirring the plating solution by driving a stirring bar arranged at a position higher than the ion resistor (step S20); in a state where the stirring of the plating solution by the stirring bar is stopped, immersing a substrate as a cathode in the plating solution (step S40); in a state where the substrate is immersed in the plating solution, starting the stirring of the plating solution again by a stirring bar arranged at a position higher than the ion resistor and lower than the substrate (step S50); and in a state where the stirring of the plating solution by the stirring bar is started again, causing a current to flow between the substrate and the anode, thereby performing a plating treatment on the substrate (step S60).

Description

[0001] This application is a divisional application of the parent application whose applicant is "EBARA Manufacturing Co., Ltd.", whose invention name is "Plating method and plating device" and whose application number is "202180017530.5". Technical Field

[0002] The present invention relates to a plating method and a plating device. Background Art

[0003] Conventionally, a so-called cup-type plating apparatus is known as a plating apparatus capable of plating a substrate (see, for example, Patent Document 1). This plating apparatus includes a plating tank for storing a plating solution, a substrate holder for holding a substrate serving as a cathode, a rotating mechanism for rotating the substrate holder, and a lifting mechanism for raising and lowering the substrate holder.

[0004] Furthermore, conventionally, there is known a technique of disposing an ion resistor having a plurality of holes inside a plating tank in order to achieve in-plane uniformity in the thickness of a plating film (see, for example, Patent Document 2).

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2008-19496

[0006] Patent Document 2: Japanese Patent Application Laid-Open No. 2004-363422

[0007] In the case where an ion resistor is arranged inside the plating tank of a cup-type plating device as exemplified in the above-mentioned patent document 1, if a large number of bubbles contained in the plating liquid in the plating tank adhere to the holes of the ion resistor, the bubbles attached to the holes may cause the plating quality of the substrate to deteriorate. Summary of the Invention

[0008] The present invention has been made in view of the above circumstances, and one of its objects is to provide a technology capable of removing bubbles adhering to the pores of an ion resistor.

[0009] (Form 1)

[0010] To achieve the above object, one aspect of the present application relates to a plating method including: supplying a plating solution to a plating bath in which an anode and an ion resistor are disposed so as to be immersed in the plating solution, the ion resistor being disposed at a position higher than the anode and having a plurality of holes; stirring the plating solution by driving a stirrer disposed at a position higher than the ion resistor while the anode and the ion resistor are immersed in the plating solution; immersing a substrate as a cathode in the plating solution while the stirring of the plating solution by the stirrer is stopped; again starting the stirring of the plating solution by the stirrer disposed at a position higher than the ion resistor and lower than the substrate while the substrate is immersed in the plating solution; and flowing a current between the substrate and the anode while the stirring of the plating solution by the stirrer is again started, thereby performing a plating treatment on the substrate.

[0011] According to this aspect, for example, even if bubbles contained in the plating solution adhere to the holes of the ion resistor at the time of the supply of the plating solution to the plating bath, the movement of the bubbles adhering to the holes upward can be promoted by the stirring of the plating solution by the stirrer. Thus, the bubbles adhering to the holes of the ion resistor can be removed.

[0012] Further, according to this aspect, since the substrate is immersed in the plating solution while the stirring of the plating solution by the stirrer is stopped, the fluctuation of the liquid level of the plating solution caused by the stirring of the plating solution by the stirrer at the time of the immersion of the substrate in the plating solution can be suppressed. Thus, the bubbles can be suppressed from adhering to the substrate in a large amount at the time of the immersion of the substrate in the plating solution.

[0013] Further, according to this aspect, since the stirring of the plating solution by the stirrer is again started while the substrate is immersed in the plating solution, the plating solution can be efficiently supplied to the substrate. Thus, for example, the pre-wetting treatment solution remaining in the inside of the wiring pattern of the substrate can be efficiently replaced with the plating solution.

[0014] Further, according to this aspect, since the plating treatment is performed while the stirring of the plating solution by the stirrer is again started, the plating solution can be efficiently supplied to the substrate at the time of the plating treatment. Thus, the plating film can be efficiently formed on the substrate.

[0015] (Aspect 2)

[0016] The above aspect 1 can further include: overflowing the plating solution from the plating bath while the stirring of the plating solution by the stirrer is stopped, and immersing the substrate in the plating solution while the stirring of the plating solution by the stirrer is stopped after the overflowing of the plating solution from the plating bath.

[0017] According to this aspect, bubbles that float above the ionic resistor can be discharged to the outside of the plating tank together with the plating solution overflowing from the plating tank. This effectively prevents bubbles from adhering to the substrate when the substrate is immersed in the plating solution.

[0018] (Form 3)

[0019] It can also be constructed so that the above-mentioned form 1 or 2 also includes: after the above-mentioned substrate is plated, the above-mentioned substrate is lifted from the plating liquid; in the state where the above-mentioned substrate is lifted from the plating liquid, the plating liquid is stirred by driving the above-mentioned stirring rod arranged at a position above the above-mentioned ion resistor; in the state where the above-mentioned stirring rod stops stirring the plating liquid, the second substrate is immersed in the plating liquid; in the state where the above-mentioned second substrate is immersed in the plating liquid, the above-mentioned stirring rod arranged at a position above the above-mentioned ion resistor and below the above-mentioned second substrate is restarted to stir the plating liquid; and in the state where the above-mentioned stirring rod is restarted to stir the plating liquid, current is caused to flow between the above-mentioned second substrate and the above-mentioned anode, thereby plating the above-mentioned second substrate.

[0020] (Form 4)

[0021] It can also be constructed as follows: based on any one of the above-mentioned forms 1 to 3, immersing the above-mentioned substrate in the plating liquid in a state where the above-mentioned stirring rod stops stirring the plating liquid, including: immersing the above-mentioned substrate in the plating liquid in a state where the above-mentioned stirring rod stops stirring the plating liquid and the plated surface of the above-mentioned substrate is tilted relative to the horizontal direction.

[0022] (Form 5)

[0023] It can also be constructed so that, on the basis of the above-mentioned form 4, it further includes: returning the plated surface of the above-mentioned substrate immersed in the above-mentioned plating solution to a horizontal direction, and after returning the plated surface of the above-mentioned substrate immersed in the above-mentioned plating solution to a horizontal direction, stirring the plating solution by the above-mentioned stirring rod is resumed while the above-mentioned substrate is immersed in the plating solution.

[0024] If the stirring of the plating solution by the stirring rod is resumed while the substrate's surface to be plated is tilted relative to the horizontal, the upper end of the tilted substrate's surface to be plated is close to the liquid surface of the plating solution. Therefore, when the liquid surface of the plating solution fluctuates due to the resumption of stirring of the plating solution by the stirring rod, bubbles may be easily drawn into the substrate's surface to be plated. In contrast, according to this embodiment, stirring of the plating solution by the stirring rod is resumed after the substrate's surface to be plated is returned to the horizontal direction. Therefore, even if the liquid surface of the plating solution fluctuates due to the resumption of stirring of the plating solution by the stirring rod, bubbles can be effectively suppressed from being drawn into the substrate's surface to be plated.

[0025] (Mode 6)

[0026] It can also be configured such that, on the basis of Mode 1 described above, the flow rate of the plating solution flowing from the lower surface side of the ion resistor toward the upper surface side of the ion resistor through the plurality of holes is greater than the flow rate of the plating solution when the plating treatment is performed on the substrate, when the plating solution is agitated by driving the stirring bar in a state in which the anode and the ion resistor are immersed in the plating solution.

[0027] According to this mode, bubbles adhering to the holes of the ion resistor can be effectively removed.

[0028] (Mode 7)

[0029] It can also be configured such that, on the basis of any one of Modes 1 to 6 described above, the plating solution is agitated by driving the stirring bar alternately in a first direction parallel to the upper surface of the ion resistor and in a second direction opposite to the first direction.

[0030] (Mode 8)

[0031] It can also be configured such that, on the basis of Mode 7 described above, the stirring bar has a honeycomb structure including a plurality of stirring members each having a through-hole in the shape of a polygon extending in the vertical direction, and the plurality of stirring members have, in plan view, a square portion in the shape of a quadrangle, a first protruding portion protruding in the shape of a circular arc toward the first direction side from the side surface of the square portion on the first direction side, and a second protruding portion protruding in the shape of a circular arc toward the second direction side from the side surface of the square portion on the second direction side.

[0032] According to this mode, since the stirring bar has a honeycomb structure, the arrangement density of the plurality of stirring members can be easily increased. Thus, the plating solution can be effectively agitated by the stirring bar, and bubbles adhering to the holes of the ion resistor can be effectively removed.

[0033] Further, according to this mode, since the plurality of stirring members of the stirring bar have the square portion, the first protruding portion, and the second protruding portion, the area that can be agitated by the stirring bar after the stirring bar has moved a certain distance can be easily enlarged, for example, as compared to a case in which the plurality of stirring members have the square portion but do not have the first protruding portion and the second protruding portion. Thus, the plating solution can be effectively agitated by the stirring bar, and bubbles adhering to the holes of the ion resistor can be more effectively removed.

[0034] (Mode 9)

[0035] It is also possible to configure, on the basis of the above-described Mode 8, such that the maximum value of the distance between the above-described first protruding portion and the above-described second protruding portion, that is, the width of the stirrer, is smaller than the maximum value of the distance between the outer edge in the above-described first direction and the outer edge in the above-described second direction of the plated surface of the above-described substrate on which plating processing is performed, that is, the width of the substrate.

[0036] According to this mode, for example, compared to the case where the width of the stirrer and the width of the substrate are the same or the case where the width of the stirrer is larger than the width of the substrate, it is possible to increase the moving distance of the stirrer in the first direction and the second direction. Thereby, it is possible to more effectively stir the plating solution by the stirrer, and thus it is possible to effectively remove the bubbles adhering to the holes of the ion resistor.

[0037] (Mode 10)

[0038] To achieve the above-described object, a plating device according to one mode of the present application includes: a plating bath in which an anode and an ion resistor are disposed, the ion resistor is disposed at a position higher than the anode, and has a plurality of holes; a substrate holder that holds a substrate as a cathode; and a stirrer configured to be disposed at a position higher than the ion resistor and lower than the substrate, and is alternately driven in a first direction parallel to the upper surface of the ion resistor and a second direction opposite to the first direction to stir a plating solution stored in the plating bath, the stirrer has a honeycomb configuration including a plurality of stirring members having a plurality of through holes in the shape of a polygon extending in the vertical direction, the plurality of stirring members have, when viewed from above, a square portion in the shape of a quadrangle, a first protruding portion protruding in the shape of a circular arc from a side in the first direction of the square portion toward the first direction, and a second protruding portion protruding in the shape of a circular arc from a side in the second direction of the square portion toward the second direction.

[0039] According to this mode, even in the case where bubbles adhere to the holes of the ion resistor, it is possible to promote the movement of the bubbles adhering to the holes upward by the stirring of the plating solution by the stirrer. Thereby, it is possible to remove the bubbles adhering to the holes of the ion resistor.

[0040] In addition, according to this mode, the plurality of stirring members of the stirrer have a honeycomb configuration, and the plurality of stirring members of the stirrer have a square portion, a first protruding portion, and a second protruding portion, and thus, as described above, it is possible to more effectively stir the plating solution by the stirrer, and thus it is possible to effectively remove the bubbles adhering to the holes of the ion resistor.

[0041] (Mode 11)

[0042] It is also possible to configure such that the maximum value of the distance between the first protruding portion and the second protruding portion, that is, the width of the stirring bar, is smaller than the maximum value of the distance between the outer edge in the first direction of the plated surface of the substrate on which plating processing is performed and the outer edge in the second direction, that is, the width of the substrate. BRIEF DESCRIPTION OF DRAWINGS

[0043] Figure 1 is a perspective view showing the overall structure of a plating apparatus according to the embodiment.

[0044] Figure 2 is a plan view showing the overall structure of a plating apparatus according to the embodiment.

[0045] Figure 3 is a schematic view showing the structure of a plating module in a plating apparatus according to the embodiment.

[0046] Figure 4 is a schematic view showing a state in which a substrate according to the embodiment is immersed in a plating solution.

[0047] Figure 5 is a schematic plan view of a stirring bar according to the embodiment.

[0048] Figure 6 is one example of a flowchart for explaining a plating method according to the embodiment.

[0049] Figure 7 is one example of a flowchart for explaining a plating method according to the modified example 1 of the embodiment.

[0050] Figure 8 is one example of a flowchart for explaining a plating method according to the modified example 2 of the embodiment.

[0051] Figure 9 is a schematic plan view of a stirring bar according to the modified example 3 of the embodiment.

[0052] Figure 10 is a schematic plan view of a stirring bar according to the modified example 4 of the embodiment.

[0053] Figure 11 is a schematic plan view of a stirring bar according to the modified example 5 of the embodiment.

[0054] Figure 12 is a schematic cross-sectional view showing one example of the internal structure of a plating bath in a case where a film is arranged inside the plating bath according to the embodiment. DETAILED DESCRIPTION

[0055] (EMBODIMENT)

[0056] An embodiment of the present application will be described below with reference to the accompanying drawings. Note that the drawings schematically illustrate the features of the components for easy understanding, and the dimensional proportions and the like of the components are not necessarily the same as in actuality. In addition, in several drawings, an orthogonal coordinate of X-Y-Z is illustrated as a reference. In the orthogonal coordinate, the Z direction corresponds to the upper side, and the -Z direction corresponds to the lower side (the direction in which gravity acts).

[0057] Figure 1 is a perspective view showing the overall structure of the plating apparatus 1000 of the present embodiment. Figure 2 is a plan view (top view) showing the overall structure of the plating apparatus 1000 of the present embodiment. As shown in Figure 1 and Figure 2 The plating apparatus 1000 is provided with a load port 100, a transfer robot 110, an aligner 120, a pre-wetting module 200, a pre-dip module 300, a plating module 400, a cleaning module 500, a spin dryer 600, a transfer device 700, and a control module 800.

[0058] The load port 100 is a module for carrying in a substrate housed in a cassette such as a FOUP or the like into the plating apparatus 1000, and carrying out the substrate from the plating apparatus 1000 to the cassette. In the present embodiment, four load ports 100 are arranged in the horizontal direction, but the number and arrangement of the load ports 100 are arbitrary. The transfer robot 110 is a robot for transferring a substrate, and is configured to transfer the substrate between the load port 100, the aligner 120, the pre-wetting module 200, and the spin dryer 600. The transfer robot 110 and the transfer device 700 can transfer the substrate via a temporary placement table (not illustrated) when the substrate is transferred between the transfer robot 110 and the transfer device 700.

[0059] The aligner 120 is a module for aligning the orientation plane, notch, or the like of a substrate to a prescribed direction. In the present embodiment, two aligners 120 are arranged in the horizontal direction, but the number and arrangement of the aligners 120 are arbitrary. The pre-wetting module 200 wets the plating surface of a substrate before plating processing with a processing liquid such as pure water or degassed water, thereby replacing the air inside a pattern formed on the surface of the substrate with the processing liquid. The pre-wetting module 200 is configured to perform pre-wetting processing that facilitates the supply of plating liquid to the inside of the pattern by replacing the processing liquid inside the pattern with plating liquid at the time of plating. In the present embodiment, two pre-wetting modules 200 are arranged in the vertical direction, but the number and arrangement of the pre-wetting modules 200 are arbitrary.

[0060] The pre-dip module 300 is configured to perform a pre-dip treatment such as etching and removing an oxide film having a large resistance present at a site such as a surface of a seed layer formed at a plating surface of a substrate before a plating treatment with a treatment liquid such as sulfuric acid or hydrochloric acid to clean or activate the plating substrate surface. In the present embodiment, two pre-dip modules 300 are arranged in the vertical direction, but the number and arrangement of the pre-dip modules 300 are arbitrary. The plating module 400 performs a plating treatment on the substrate. In the present embodiment, a group of 12 plating modules 400 arranged in the vertical direction by three and in the horizontal direction by four is two, and a total of 24 plating modules 400 are provided, but the number and arrangement of the plating modules 400 are arbitrary.

[0061] The cleaning module 500 is configured to perform a cleaning treatment on the substrate in order to remove a plating liquid or the like remaining on the substrate after the plating treatment. In the present embodiment, two cleaning modules 500 are arranged in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The spin dryer 600 is a module for drying the substrate after the cleaning treatment by high-speed rotation. In the present embodiment, two spin dryers 600 are arranged in the vertical direction, but the number and arrangement of the spin dryers 600 are arbitrary. The conveyance device 700 is a device for conveying the substrate between the plurality of modules in the plating apparatus 1000. The control module 800 is configured to control the plurality of modules of the plating apparatus 1000, and for example, can be constituted by a general-purpose computer or a dedicated computer provided with an input / output interface with an operator.

[0062] An example of a series of plating treatments performed by the plating apparatus 1000 will be described. First, a substrate that has been housed in a cassette is carried into the load port 100. Next, the substrate is taken out of the cassette of the load port 100 by the conveyance robot 110, and is carried to the aligner 120. The aligner 120 aligns the position of the orientation plane, notch, or the like of the substrate to a prescribed direction. The conveyance robot 110 hands over the substrate whose direction has been aligned by the aligner 120 to the pre-wetting module 200.

[0063] The pre-wetting module 200 performs a pre-wetting treatment on the substrate. The conveyance device 700 carries the substrate on which the pre-wetting treatment has been performed to the pre-dip module 300. The pre-dip module 300 performs a pre-dip treatment on the substrate. The conveyance device 700 carries the substrate on which the pre-dip treatment has been performed to the plating module 400. The plating module 400 performs a plating treatment on the substrate.

[0064] The conveyance device 700 conveys the substrate on which the plating treatment has been performed to the cleaning module 500. The cleaning module 500 performs a cleaning treatment on the substrate. The conveyance device 700 conveys the substrate on which the cleaning treatment has been performed to the spin dryer 600. The spin dryer 600 performs a drying treatment on the substrate. The conveyance robot 110 receives the substrate from the spin dryer 600, and conveys the substrate on which the drying treatment has been performed to the cassette of the load port 100. Finally, the cassette in which the substrate has been accommodated is carried out from the load port 100.

[0065] Further, the structure of the plating device 1000 described in Figure 1 , Figure 2 is only one example, and the structure of the plating device 1000 is not limited to Figure 1 , Figure 2 .

[0066] Next, the plating module 400 will be described. Further, the plurality of plating modules 400 included in the plating device 1000 according to the present embodiment have the same structure, and thus one plating module 400 will be described.

[0067] Figure 3 is a schematic view showing the structure of the plating module 400 in the plating device 1000 according to the present embodiment. Specifically, Figure 3 schematically shows the plating module 400 in a state before the substrate Wf is immersed in the plating solution Ps. Figure 4 is a schematic view showing a state after the substrate Wf is immersed in the plating solution Ps. Further, a part of Figure 4 is also shown as an enlarged view of the Al portion, but the illustration of the stirrer 70 described later is omitted in the enlarged view of the Al portion.

[0068] The plating device 1000 according to the present embodiment is a cup plating device. The plating module 400 of the plating device 1000 includes a plating bath 10, an overflow bath 20, a substrate holder 30, and a stirrer 70. In addition, as exemplified in Figure 3 , the plating module 400 can include a rotation mechanism 40, an inclination mechanism 45, and a lifting mechanism 50.

[0069] The plating bath 10 according to the present embodiment is composed of a bottomed container having an opening in the upper portion. Specifically, the plating bath 10 has a bottom wall 10a, and an outer peripheral wall 10b extending upward from the outer periphery of the bottom wall 10a, the upper portion of the outer peripheral wall 10b being open. Further, the shape of the outer peripheral wall 10b of the plating bath 10 is not particularly limited, but as one example, the outer peripheral wall 10b according to the present embodiment has a cylindrical shape. The plating solution Ps is stored in the inside of the plating bath 10. In addition, a supply port 13 for supplying the plating solution Ps to the plating bath 10 is provided in the plating bath 10.

[0070] As the plating solution Ps, it is only necessary to be a solution containing ions of metal elements constituting a plated film, and specific examples thereof are not particularly limited. In the present embodiment, a copper plating treatment is used as one example of a plating treatment, and a copper sulfate solution is used as one example of the plating solution Ps. In addition, a prescribed additive can also be contained in the plating solution Ps.

[0071] An anode 11 is arranged inside the plating bath 10. The specific type of the anode 11 is not particularly limited, and it can be either a non-dissolving anode or a dissolving anode. In the present embodiment, a non-dissolving anode is used as one example of the anode 11. The specific type of the non-dissolving anode is not particularly limited, and platinum, iridium oxide, or the like can be used.

[0072] Inside the plating bath 10, an ion resistor 12 is arranged at a position higher than the anode 11. Specifically, as shown in Figure 4 (A1 portion enlarged view), the ion resistor 12 is composed of a porous plate member having a plurality of pores 12a (fine holes). The pores 12a are provided to communicate the lower surface and the upper surface of the ion resistor 12. As shown in Figure 3 , the region in the ion resistor 12 in which the plurality of pores 12a are formed is referred to as a "pore formation region PA". The pore formation region PA according to the present embodiment has a circular shape in plan view. In addition, the area of the pore formation region PA according to the present embodiment is the same as or larger than the area of the plated surface Wfa of the substrate Wf. However, the structure is not limited thereto, and the area of the pore formation region PA can be smaller than the area of the plated surface Wfa of the substrate Wf.

[0073] The ion resistor 12 is provided in order to achieve uniformization of the electric field formed between the anode 11 and the substrate Wf (reference numeral illustrated in Figure 6 later) serving as a cathode. As shown in the present embodiment, by arranging the ion resistor 12 in the plating bath 10, it is possible to easily achieve uniformization of the film thickness of the plated film (plating layer) formed on the substrate Wf.

[0074] The overflow tank 20 is composed of a bottomed container arranged outside the plating bath 10. The overflow tank 20 is provided in order to temporarily store the plating solution Ps that has exceeded the upper end of the outer peripheral wall 10b of the plating bath 10 (i.e., the plating solution Ps that has overflowed from the plating bath 10). The plating solution Ps stored in the overflow tank 20 is temporarily stored in the liquid storage tank 80 (refer to Figure 4 ) after being discharged from the discharge port 14, through the flow path 15. The plating solution Ps stored in the liquid storage tank 80 is later pressurized by the pump 81 (refer to Figure 4 ) and is circulated again to the plating bath 10 from the supply port 13.

[0075] The plating module 400 may also include a liquid level sensor 60a for detecting the liquid level position of the plating solution Ps in the plating tub 10. The detection result of the liquid level sensor 60a is transmitted to the control module 800.

[0076] The plating module 400 may also include a flow sensor 60b for detecting the flow rate (L / min) of the plating solution Ps overflowing from the plating tank 10. The detection result of the flow sensor 60b is transmitted to the control module 800. The specific location of the flow sensor 60b is not particularly limited, but as an example, the flow sensor 60b according to this embodiment is arranged in the flow path 15 connecting the discharge port 14 of the overflow tank 20 and the liquid storage tank 80.

[0077] The substrate holder 30 holds the substrate Wf serving as a cathode so that its plated surface Wfa faces the anode 11. Specifically, in this embodiment, the plated surface Wfa of the substrate Wf is provided on the downward surface (lower surface) of the substrate Wf.

[0078] like Figure 3 As illustrated, the substrate holder 30 may include a ring 31 provided so as to protrude downward from the outer peripheral edge of the plated surface Wfa of the substrate Wf. Specifically, the ring 31 according to the present embodiment has an annular shape when viewed from below.

[0079] The substrate holder 30 is connected to a rotation mechanism 40 . The rotation mechanism 40 is a mechanism for rotating the substrate holder 30 . Figure 3 The illustrated "R1" is an example of the rotation direction of the substrate holder 30. A known rotary motor or the like can be used as the rotation mechanism 40. The tilting mechanism 45 is a mechanism for tilting the rotation mechanism 40 and the substrate holder 30. The lifting mechanism 50 is supported by a support shaft 51 extending in the vertical direction. The lifting mechanism 50 is a mechanism for vertically lifting the substrate holder 30, the rotation mechanism 40, and the tilting mechanism 45. A known lifting mechanism such as a linear actuator can be used as the lifting mechanism 50.

[0080] In addition, if Figure 12As exemplified, the film 16 can be arranged at a position above the anode 11 and below the ion resistor 12 in the interior of the plating bath 10. In this case, the interior of the plating bath 10 is divided by the film 16 into an anode chamber 17a below the film 16 and a cathode chamber 17b above the film 16. The anode 11 is arranged in the anode chamber 17a, and the ion resistor 12 is arranged in the cathode chamber 17b. The film 16 is configured to allow passage of ion species including metal ions contained in the plating solution Ps therethrough, and to inhibit passage of non-ion species, such as plating additives, contained in the plating solution Ps therethrough. For example, an ion exchange membrane can be used as such a film 16.

[0081] In addition, in the case where the interior of the plating bath 10 is divided by the film 16 into the anode chamber 17a and the cathode chamber 17b, it is preferable that the supply port 13 be provided in each of the anode chamber 17a and the cathode chamber 17b. In addition, it is preferable that a discharge port 14a for discharging the plating solution Ps from the anode chamber 17a be provided.

[0082] Figure 5 is a schematic plan view of the stirring bar 70. Referring to Figure 3 , Figure 4 and Figure 5 , the stirring bar 70 is arranged at a position above the ion resistor 12 and below the substrate Wf. The stirring bar 70 is driven by a driving device 77. The plating solution Ps in the plating bath 10 is stirred by driving the stirring bar 70.

[0083] As one example, the stirring bar 70 according to the present embodiment is driven alternately in a "first direction (as one example, the X direction in the present embodiment) parallel to the upper surface of the ion resistor 12" and a "second direction (as one example, the -X direction in the present embodiment) opposite to the first direction". That is, as one example, the stirring bar 70 according to the present embodiment reciprocates in the X-axis direction. The driving operation of this stirring bar 70 is controlled by the control module 800.

[0084] As exemplified in Figure 5 , as one example, the stirring bar 70 according to the present embodiment has a plurality of stirring members 71a extending in a direction (Y-axis direction) perpendicular to the first direction and the second direction with respect to the stirring bar 70. A gap is provided between adjacent stirring members 71a. One end of the plurality of stirring members 71a is connected to a connecting member 72a, and the other end is connected to a connecting member 72b.

[0085] The stirring bar 70 is preferably configured so that a movement area MA of the stirring bar 70 (i.e., a range in which the stirring bar 70 reciprocates) when the plating solution Ps is stirred in a plan view covers the entire hole formation area PA of the ion resistor 12. According to this configuration, the plating solution Ps above the hole formation area PA of the ion resistor 12 can be effectively stirred by the stirring bar 70.

[0086] Further, the stirring bar 70 only needs to be disposed inside the plating bath 10 at least when the plating solution Ps is stirred, and does not need to be disposed inside the plating bath 10 at all times. For example, the stirring bar 70 can be configured so as not to be disposed inside the plating bath 10 in a case where the driving of the stirring bar 70 is stopped and the stirring of the plating solution Ps by the pair of stirring bars 70 is not performed.

[0087] The control module 800 includes a microcomputer including a CPU (Central Processing Unit) 801 as a processor, a storage device 802 as a non-transitory storage medium, and the like. The control module 800 controls the operation of the plating module 400 by the CPU 801 as a processor operating based on an instruction of a program stored in the storage device 802.

[0088] However, sometimes a bubble Bu is generated in the plating solution Ps of the plating bath 10. Specifically, for example, when air flows into the plating bath 10 together with the plating solution Ps at the time of supplying the plating solution Ps to the plating bath 10, the air can become a bubble Bu.

[0089] As described above, when a bubble Bu is generated in the plating solution Ps of the plating bath 10, there is a case where the bubble Bu adheres to the hole 12a of the ion resistor 12. It is assumed that when plating processing is performed on the substrate Wf in a state where a large amount of the bubble Bu adheres to the hole 12a, the plating quality of the substrate Wf can be deteriorated by the bubble Bu. Therefore, in the present embodiment, a technique described below is used in order to cope with this problem.

[0090] Figure 6 is one example of a flowchart for describing a plating method according to the present embodiment. The plating method according to the present embodiment includes steps S10 to S60. Further, the plating method according to the present embodiment can be automatically executed by the control module 800. In addition, before the start of the step S10 according to the present embodiment, the plating solution Ps is not stored inside the plating bath 10, or even when the plating solution Ps is stored inside the plating bath 10, the liquid surface of the plating solution Ps of the plating bath 10 is located at a position lower than the ion resistor 12.

[0091] In step S10, plating solution Ps is supplied to plating tub 10 to immerse anode 11 and ion resistor 12 in plating solution Ps. Specifically, in this embodiment, plating solution Ps is supplied from supply port 13 to plating tub 10 to immerse anode 11 and ion resistor 12 in plating solution Ps.

[0092] In addition, it can also be constructed as follows: in step S10, the liquid level position of the plating liquid Ps is obtained based on the detection result of the above-mentioned liquid level sensor 60a, and the plating liquid Ps is supplied to the plating tank 10 until it is determined that the liquid level position of the obtained plating liquid Ps becomes a specified position above the anode 11 and the ion resistor 12.

[0093] Alternatively, the configuration may be such that, in step S10, based on the detection result of the flow sensor 60b, the flow rate of the plating solution Ps overflowing from the plating tank 10 is obtained, and the plating solution Ps is supplied to the plating tank 10 until it is determined that the obtained flow rate reaches a predetermined flow rate greater than zero. In this case, the liquid level of the plating solution Ps in the plating tank 10 can be positioned above the anode 11 and the ion resistor 12, so that the anode 11 and the ion resistor 12 are immersed in the plating solution Ps.

[0094] After step S10, step S20 is executed. Specifically, after the supply of the plating solution Ps to the plating tank 10 involved in step S10 is started, and when the liquid level of the plating solution Ps in the plating tank 10 reaches a position where the plating solution Ps can be stirred by the stirring rod 70 (for example, when the liquid level of the plating solution Ps is located above the stirring rod 70), step S20 is executed.

[0095] In step S20, the stirring bar 70, which is located above the ionic resistor 12 and below the substrate Wf, is driven to stir the plating solution Ps. That is, in step S20, stirring of the plating solution Ps by the stirring bar 70 is started. Specifically, in this embodiment, the plating solution Ps is stirred by alternately driving the stirring bar 70 in the first direction and the second direction.

[0096] According to this embodiment, even if, for example, bubbles Bu contained in the plating solution Ps adhere to the holes 12a of the ion resistor 12 when the plating solution Ps is supplied to the plating tank 10, the stirring rod 70 involved in step S20 can be used to stir the plating solution Ps, thereby promoting the upward movement of the bubbles Bu. As a result, the bubbles Bu adhering to the holes 12a of the ion resistor 12 can be removed.

[0097] Further, in terms of being able to effectively remove the bubbles Bu adhering to the holes 12a of the ion resistor 12, it is preferable that the flow rate (L / min) of the plating solution Ps flowing from the lower surface side of the ion resistor 12 toward the upper surface side of the ion resistor 12 through the plurality of holes 12a be greater.

[0098] Therefore, for example, it is preferable that the flow rate of the plating solution Ps flowing from the lower surface side of the ion resistor 12 toward the upper surface side of the ion resistor 12 through the plurality of holes 12a in step S20 be greater than the flow rate of the plating solution Ps flowing from the lower surface side of the ion resistor 12 toward the upper surface side of the ion resistor 12 through the plurality of holes 12a in step S60 described later. According to this structure, the bubbles Bu adhering to the holes 12a of the ion resistor 12 can be effectively removed.

[0099] Further, for example, by increasing the rotation speed of the pump 81, which is a pump for pressurizing the plating solution Ps in the liquid storage tank 80 toward the plating bath 10, the circulation flow rate of the plating solution Ps circulating between the liquid storage tank 80 and the plating bath 10 can be increased. Thereby, the flow rate of the plating solution Ps flowing inside the plating bath 10 can be increased, and thus the flow rate of the plating solution Ps flowing from the lower surface side of the ion resistor 12 toward the upper surface side of the ion resistor 12 through the plurality of holes 12a can be increased.

[0100] That is, in the present embodiment, it is preferable that the circulation flow rate (L / min) of the plating solution Ps in step S20 be greater than the circulation flow rate (which will be referred to as "reference flow rate (L / min)") of the plating solution Ps in step S60. Thereby, the flow rate of the plating solution Ps flowing from the lower surface side of the ion resistor 12 toward the upper surface side of the ion resistor 12 through the plurality of holes 12a in step S20 is greater than the flow rate of the plating solution Ps flowing from the lower surface side of the ion resistor 12 toward the upper surface side of the ion resistor 12 through the plurality of holes 12a in step S60. As a result, the bubbles Bu adhering to the holes 12a of the ion resistor 12 can be effectively removed.

[0101] Step S30 is executed after step S20. In step S30, the driving of the stirring bar 70 is stopped to stop the stirring of the plating solution Ps by the stirring bar 70.

[0102] Further, a specific example of the time from the start of the stirring by the stirring bar 70 in step S20 to the stop of the stirring by the stirring bar 70 in step S30, that is, the stirring time based on the stirring bar 70, is not particularly limited, but for example, a prescribed time selected from 2 seconds or more and 10 seconds or less can be used. In this way, according to the present embodiment, by only short-time stirring of the plating solution Ps with the stirring bar 70, the bubbles Bu adhering to the holes 12a of the ion resistor 12 can be removed.

[0103] Step S40 is executed after step S30. In step S40, the substrate Wf is immersed in the plating liquid Ps in a state where the stirring of the plating liquid Ps by the stirrer 70 is stopped. Specifically, in the present embodiment, the substrate holder 30 is lowered by the lifting mechanism 50 to immerse at least the plated surface Wfa of the substrate Wf in the plating liquid Ps.

[0104] As in the present embodiment, the substrate Wf is immersed in the plating liquid Ps in step S40 in a state where the stirring of the plating liquid Ps by the stirrer 70 is stopped in step S30, and thus it is possible to suppress the fluctuation of the liquid level of the plating liquid Ps caused by the stirring of the plating liquid Ps by the stirrer 70 at the time of the immersion of the substrate Wf in the plating liquid Ps. Thus, it is possible to suppress the attachment of the bubbles Bu to the plated surface Wfa of the substrate Wf at the time of the immersion of the substrate Wf in the plating liquid Ps.

[0105] Further, it can also be configured such that, in step S40, the plated surface Wfa of the substrate Wf is brought into contact with the plating liquid Ps in a state where the substrate holder 30 is tilted by the tilting mechanism 45 in a manner that the plated surface Wfa of the substrate Wf is tilted with respect to the horizontal direction (i.e., in a manner that the plated surface Wfa is tilted with respect to the horizontal plane). According to this configuration, it is possible to effectively suppress the attachment of the bubbles Bu to the plated surface Wfa as compared to the case where the plated surface Wfa of the substrate Wf is brought into contact with the plating liquid Ps in a state where the plated surface Wfa is in the horizontal direction.

[0106] Step S50 is executed after step S40. In step S50, the stirring of the plating liquid Ps by the stirrer 70 is started again in a state where the substrate Wf is immersed in the plating liquid Ps. Specifically, in the present embodiment, the stirring of the plating liquid Ps by the stirrer 70 is started again by alternately driving the stirrer 70 disposed at a position higher than the ion resistor 12 and lower than the substrate Wf in the first direction and the second direction in a state where the substrate Wf is immersed in the plating liquid Ps.

[0107] Thus, by starting the stirring of the plating liquid Ps by the stirrer 70 again in a state where the substrate Wf is immersed in the plating liquid Ps, it is possible to effectively supply the plated surface Wfa of the substrate Wf with the plating liquid Ps. Thus, for example, it is possible to effectively replace the pre-wetting treatment liquid remaining inside the wiring pattern of the plated surface Wfa of the substrate Wf with the plating liquid Ps.

[0108] In addition, as described above, in the case where the plated surface Wfa of the substrate Wf is brought into contact with the plating liquid Ps in a state where the plated surface Wfa of the substrate Wf is inclined, it is preferable that the resuming of the stirring of the plating liquid Ps by the stirrer 70 involved in the step S50 be performed after the return of the plated surface Wfa of the substrate Wf in the state of being immersed in the plating liquid Ps to the horizontal direction. That is, in this case, when the plated surface Wfa of the substrate Wf is brought into contact with the plating liquid Ps in a state where the plated surface Wfa of the substrate Wf is inclined in the step S40, then the plated surface Wfa of the substrate Wf is returned to the horizontal direction (which will be referred to as "step S45"), and then the stirring of the plating liquid Ps by the stirrer 70 involved in the step S50 is started.

[0109] Here, it is assumed that, in the case where the stirring of the plating liquid Ps by the stirrer 70 is resumed in a state where the plated surface Wfa of the substrate Wf is inclined with respect to the horizontal direction, the upper end of the plated surface Wfa of the substrate Wf in the inclined state (the upper end of the outer edge of the plated surface Wfa) approaches the liquid surface of the plating liquid Ps, so when the liquid surface of the plating liquid Ps fluctuates due to the resuming of the stirring of the plating liquid Ps by the stirrer 70, the air bubbles Bu can easily be entrained into the plated surface Wfa of the substrate Wf. In contrast to this, according to this structure, the stirring of the plating liquid Ps by the stirrer 70 is resumed after the return of the plated surface Wfa of the substrate Wf in the state of being immersed in the plating liquid Ps to the horizontal direction, so even in the case where it is assumed that the liquid surface of the plating liquid Ps fluctuates due to the resuming of the stirring of the plating liquid Ps by the stirrer 70, it is possible to effectively suppress the air bubbles Bu from being entrained into the plated surface Wfa of the substrate Wf.

[0110] The step S60 is performed after the step S50. In the step S60, the current is caused to flow between the substrate Wf and the anode 11 in a state where the stirring of the plating liquid Ps by the stirrer 70 is resumed (i.e., in a state where the plating liquid Ps is stirred by the stirrer 70), thereby performing the plating treatment on the plated surface Wfa of the substrate Wf. By this, the plated film composed of metal is formed on the plated surface Wfa.

[0111] As in the step S60, by performing the stirring of the plating liquid Ps by the stirrer 70 at the time of the plating treatment on the substrate Wf, it is possible to effectively supply the plating liquid Ps to the plated surface Wfa of the substrate Wf at the time of the plating treatment. By this, it is possible to effectively form the plated film on the substrate Wf.

[0112] Further, the plating processing of the substrate Wf involved in step S60 can be started at the same time as the resuming of the agitation of the plating liquid Ps by the stirrer 70 involved in step S50. Alternatively, the plating processing of the substrate Wf involved in step S60 can be started after a prescribed time elapses from the resuming of the agitation of the plating liquid Ps involved in step S50. The prescribed time is not particularly limited in terms of its specific value, but for example, it is preferable to use a sufficient time required for the plating liquid Ps to spread over the via holes, through holes, and the like of the wiring pattern formed on the plating surface Wfa of the substrate Wf. If one example of such a prescribed time is cited, for example, a time selected from 30 seconds or more and 60 seconds or less can be used.

[0113] Further, in step S60, the rotation mechanism 40 can also rotate the substrate holder 30. In addition, in step S60, the inclination mechanism 45 can also incline the substrate holder 30 so that the plating surface Wfa of the substrate Wf is inclined with respect to the horizontal direction.

[0114] Further, the reciprocating movement speed of the stirrer 70 in step S20 (first reciprocating movement speed) and the reciprocating movement speed of the stirrer 70 in steps S50 and S60 (second reciprocating movement speed) can be the same value or different values. In the case where the reciprocating movement speed of the stirrer 70 in step S20 and the reciprocating movement speed of the stirrer 70 in steps S50 and S60 are different, step S20 can be faster or slower than steps S50 and S60.

[0115] However, the stirrer 70 has a tendency that the faster the reciprocating movement speed, the higher the removal effect of the bubbles Bu. In addition, in general, it can be considered that the amount of the bubbles Bu attached to the holes 12a of the ion resistor 12 is larger before the execution of step S20 is started than before the execution of step S50 is started. Therefore, from the viewpoint of effectively removing the bubbles Bu attached to the holes 12a of the ion resistor 12, it is preferable to make the movement speed of the stirrer 70 in step S20 faster than the reciprocating movement speed of the stirrer 70 in steps S50 and S60.

[0116] The specific value of the reciprocating movement speed of the stirrer 70 in the steps S20, S50, and S60 is not particularly limited, but if an example is given, a value selected from the range of 25 (rpm) or more and 400 (rpm) or less can be used, specifically, a value selected from the range of 100 (rpm) or more and 300 (rpm) or less can be used, more specifically, a value selected from the range of 150 (rpm) or more and 250 (rpm) or less can be used. Here, "the reciprocating movement speed of the stirrer 70 is N (rpm)" specifically means that the stirrer 70 performs N times of reciprocation in 1 minute (i.e., the stirrer 70 moves in the first direction, moves in the second direction after moving in the first direction, and moves in the first direction again to return to the prescribed position).

[0117] Further, for example, the procedure involved can also be executed when new plating solution Ps (unused plating solution) is supplied to the plating bath 10 at the time of maintenance of the plating device 1000. Figure 6 Alternatively, for example, the procedure involved can also be executed when, in the operation of the plating device 1000, for some reason, the storage amount of the plating solution Ps of the plating bath 10 decreases and the liquid surface of the plating solution Ps is located at a position lower than the ion resistor 12, and thus the plating solution Ps is replenished to the plating bath 10. Figure 6 Alternatively, for example, the procedure involved can also be executed when, in the operation of the plating device 1000, for some reason, the storage amount of the plating solution Ps of the plating bath 10 decreases and the liquid surface of the plating solution Ps is located at a position lower than the ion resistor 12, and thus the plating solution Ps is replenished to the plating bath 10.

[0118] According to the present embodiment as described above, the bubble Bu adhering to the hole 12a of the ion resistor 12 can be removed. Thereby, the deterioration of the plating quality of the substrate Wf caused by the adhering bubble Bu can be suppressed.

[0119] (Modified Example 1)

[0120] Figure 7 is one example of a flowchart for describing the plating method involved in the modified example 1 of the embodiment. The procedure involved in the present modified example as exemplified in Figure 7 differs from the plating method described in Figure 6 .

[0121] In the step S35, the plating solution Ps is overflowed from the plating bath 10 in a state where the stirring of the plating solution Ps by the stirrer 70 is stopped.

[0122] Specifically, in the present modified example, the plating solution Ps is overflowed from the plating bath 10 by supplying the plating solution Ps from the supply port 13. The plating solution Ps overflowed from the plating bath 10 flows into the overflow tank 20. Further, the step S35 can be executed for a prescribed time set in advance. The specific example of the prescribed time is not particularly limited, but for example, a time selected from the range of 2 seconds or more and 120 seconds or less can be used.

[0123] According to the present modification example, since step S35 is executed, the bubble Bu that has floated to a position higher than the ion resistor 12 is discharged to the outside of the plating bath 10 together with the plating solution Ps that overflows from the plating bath 10. Thus, when the substrate Wf is immersed in the plating solution Ps in step S40, the bubble Bu can be effectively suppressed from adhering to the substrate Wf.

[0124] Further, the flow rate of the plating solution Ps supplied to the plating bath 10 in this step S35 can be more than the flow rate of the plating solution Ps supplied to the plating bath 10 in the execution of the plating treatment involved in step S60, i.e., the "reference flow rate (L / min)", can be less than the same, or can be the same as the same.

[0125] However, in terms of the point that the bubble Bu of the plating solution Ps of the plating bath 10 can be discharged to the outside of the plating bath 10 as soon as possible in step S35, it is preferable that the flow rate of the plating solution Ps supplied to the plating bath 10 in step S35 be more than the reference flow rate.

[0126] (Modification Example 2)

[0127] Figure 8 is one example of a flowchart for describing the plating method involved in the modification example 2 of the embodiment. Figure 8 The flow of the plating method involved in the modification example 2 is executed after the execution of the flow of the plating method described above in Figure 6 The plating method involved in the modification example 2 is different from the plating method described in the embodiment in that steps S70, S80, S90, S100, S110, and S120 are further executed after the execution of step S60 of the plating method described in the embodiment. Figure 6

[0128] In step S70, the substrate Wf is lifted from the plating solution Ps after the plating treatment is performed on the substrate Wf. Specifically, in the present modification example, the substrate holder 30 is moved upward by the lifting mechanism 50 to lift the substrate Wf from the plating solution Ps.

[0129] Next, in step S80, the stirrer 70 disposed at a position higher than the ion resistor 12 is driven in a state where the substrate Wf is lifted from the plating solution Ps, thereby stirring the plating solution Ps. Further, the driving mode of the stirrer 70 involved in step S80 is the same as the driving mode of the stirrer 70 involved in step S20 described above, and thus the detailed description of step S80 is omitted.

[0130] ​According to the present modification example, even if it is assumed that the bubbles Bu contained in the plating solution Ps adhere to the holes 12a of the ion resistor 12 in a state before the second substrate Wf' described later is immersed in the plating solution Ps, the movement of the bubbles Bu upward can be promoted by the stirring of the plating solution Ps by the stirrer 70 involved in the step S80. Thus, the bubbles Bu adhering to the holes 12a of the ion resistor 12 can be removed.

[0131] Next, in the step S90, the stirring of the plating solution Ps by the stirrer 70 is stopped. Next, in the step S100, the "second substrate Wf'" is immersed in the plating solution Ps in a state where the stirring of the plating solution Ps by the stirrer 70 is stopped. Further, this second substrate Wf' is a substrate on which plating processing is to be performed next to the substrate Wf on which plating processing has been performed in the step S60. In the present modification example, the second substrate Wf' has the same specific structure as the substrate Wf. In addition, the step S100 is the same as the above-described step S40 except for the point that the second substrate Wf' is used instead of the substrate Wf. Therefore, the detailed explanation of the step S100 is omitted.

[0132] According to the present modification example, in the step S100, the second substrate Wf' is immersed in the plating solution Ps in a state where the stirring of the plating solution Ps by the stirrer 70 is stopped, and thus the fluctuation of the liquid surface of the plating solution Ps at the time of the immersion of the second substrate Wf' in the plating solution Ps can be suppressed. Thus, the adhesion of the bubbles Bu to the plating surface Wfa of the second substrate Wf' in a large amount can be suppressed.

[0133] Next, in the step S110, the stirring of the plating solution Ps by the stirrer 70 is started again in a state where the second substrate Wf' is immersed in the plating solution Ps. Specifically, the stirring of the plating solution Ps by the stirrer 70 is started again by alternately driving the stirrer 70 disposed at a position higher than the ion resistor 12 and lower than the second substrate Wf' in the first direction and the second direction. Further, the step S110 is the same as the above-described step S50 except for the point that the second substrate Wf' is used instead of the substrate Wf. Therefore, the detailed explanation of the step S110 is omitted.

[0134] Next, in step S120, the current is caused to flow between the second substrate Wf' and the anode 11 in a state where the stirring of the plating solution Ps by the stirrer 70 is started again, thereby performing a plating treatment on the plated surface Wfa of the second substrate Wf'. Thus, a plating film composed of metal is formed on the plated surface Wfa of the second substrate Wf'. Further, the step S120 is the same as the above-described step S60 except for the point that the second substrate Wf' is used instead of the substrate Wf. Therefore, the detailed description of the step S120 is omitted. By performing the stirring of the plating solution Ps by the stirrer 70 at the time of the plating treatment on the second substrate Wf' as in the step S120, it is possible to efficiently supply the plating solution Ps to the plated surface Wfa of the second substrate Wf' at the time of the plating treatment. Thus, it is possible to efficiently form the plating film on the second substrate Wf'.

[0135] Further, in a case where the plating treatment is performed on a third substrate after the plating treatment is performed on the second substrate Wf', the same procedure as that of the steps S10 to S35 is executed again on the third substrate. Figure 8

[0136] Further, in the present modified example, the above-described steps S35 to S40 can also be executed between the step S90 and the step S100. In this case, it is possible to further exert the effects of the invention related to the above-described modified example 1. Figure 7

[0137] (Modified Example 3)

[0138] Figure 9 is a schematic plan view of the stirrer 70A related to the modified example 3 of the embodiment. The stirrer 70A related to the present modified example is different from the above-described stirrer 70 illustrated in Figure 5 , in that the stirrer 70A has, in addition to the plurality of stirring members 71a (i.e., the first stirring member group), the plurality of stirring members 71b, 71c, 71d, 71e (i.e., the second stirring member group) which have a length in the extending direction that is shorter than that of the stirring members 71a.

[0139] Specifically, the stirrer 70A related to the present modified example has the stirring members 71b, 71c, 71d, 71e on the first direction side and the second direction side of the plurality of stirring members 71a, respectively.

[0140] Further, as illustrated in Figure 9 , the stirring members 71b, 71c, 71d, 71e can be configured such that the farther away from the stirring members 71a, the shorter the length in the extending direction. In addition, one end of the stirring members 71b, 71c, 71d, 71e can be connected to the connecting member 72c, and the other end thereof can be connected to the connecting member 72d.

[0141] ​​According to this modification, the paddle 70A includes stirring members 71b, 71c, 71d, and 71e. Figure 5 Compared with the paddle 70 of FIG. 7 , the area where the paddle 70A can stir after the paddle 70A moves a certain distance can be expanded.

[0142] Furthermore, the plating apparatus 1000 including the stirring rod 70A according to this modification performs the above-mentioned Figure 6 In addition, in the above-mentioned modification examples 1 and 2, the paddle 70A according to this modification example may be used instead of the paddle 70.

[0143] (Variation 4)

[0144] Figure 10 : is a schematic top view of a paddle 70B according to a fourth modification of the embodiment. The paddle 70B according to this modification is similar to the paddle 70B in that it includes a plurality of paddle members 71f extending in a predetermined direction and a connecting member 72e connecting both ends of each paddle member 71f, and the connecting member 72e has a ring shape when viewed from above. Figure 5 The paddles 70 illustrated are different.

[0145] In addition, the paddle 70B according to this modification is also similar to the paddle 70B in that it is driven to rotate in a horizontal plane by the drive device 77a and the drive device 77b. Figure 5 The illustrated paddle 70 is different. Specifically, the drive device 77a drives the connecting member 72e of the paddle 70B alternately in the Y direction and the -Y direction. The drive device 77b drives the connecting member 72e alternately in the -Y direction and the Y direction. As a result, the paddle 70B rotates alternately in a first rotational direction (e.g., clockwise when viewed from above) and a second rotational direction opposite to the first rotational direction (e.g., counterclockwise when viewed from above) within a horizontal plane, about the center of the annular connecting member 72e.

[0146] In this modification as well, the plating solution Ps can be stirred by the stirring bar 70B, and thus the bubbles Bu adhering to the holes 12 a of the ion resistor 12 can be removed.

[0147] Furthermore, the plating apparatus 1000 including the stirring rod 70B according to this modification performs the above-mentioned Figure 6 In addition, in the above-mentioned modification examples 1 and 2, the paddle 70B according to this modification example may be used instead of the paddle 70.

[0148] (Variant 5)

[0149] Figure 11is a schematic plan view of the stirring bar 70C according to the modification example 5 of the embodiment. The stirring bar 70C according to the modification example of the present embodiment is different from the stirring bar 70 exemplified above in that the plurality of stirring members 73 have a honeycomb structure. Figure 5 As exemplified above, the stirring bar 70C according to the modification example of the present embodiment can further have the covering frame 75, and the outer frames 76a and 76b. Figure 11 As exemplified above, the stirring bar 70C according to the modification example of the present embodiment can further have the covering frame 75, and the outer frames 76a and 76b.

[0150] Each of the stirring members 73 has a polygonal through-hole 73a extending in the vertical direction (the perpendicular direction). The polygonal shape of the through-hole 73a is not particularly limited, and various N-sided polygons (N is a natural number of 3 or more) such as a triangle, a quadrilateral, a pentagon, a hexagon, a heptagon, and an octagon can be used. In the present modification example, a hexagon is used as one example of the polygonal shape.

[0151] Further, the plurality of stirring members 73 have a square portion 74a having a quadrilateral shape in plan view. Specifically, the square portion 74a according to the present modification example has an oblong shape extending in the horizontal direction and having a direction (Y-axis direction) perpendicular to the first direction and the second direction as a long side direction. However, the structure is not limited thereto, and the square portion 74a can have an oblong shape having the first direction and the second direction as the long side directions, or can have a square shape.

[0152] Further, the plurality of stirring members 73 have a first protruding portion 74b protruding from a side surface of the square portion 74a on the first direction side toward the first direction side, and a second protruding portion 74c protruding from a side surface of the square portion 74a on the second direction side toward the second direction side. That is, the plurality of stirring members 73 according to the present modification example have an outer appearance shape having the square portion 74a, the first protruding portion 74b, and the second protruding portion 74c in plan view. The first protruding portion 74b according to the present modification example protrudes toward the first direction side in a circular arc shape (in other words, in an arch shape). Further, the second protruding portion 74c according to the present modification example protrudes toward the second direction side in a circular arc shape (in other words, in an arch shape).

[0153] The covering frame 75 is provided to cover the outer edges of the plurality of stirring members 73. The outer frame 76a is connected to a side surface of one side (Y direction side) of the covering frame 75. The outer frame 76b is connected to a side surface of the other side (−Y direction side) of the covering frame 75. The stirring bar 70C is connected to the driving device 77 and is alternately driven in the first direction and the second direction by the driving device 77. Specifically, for the stirring bar 70C according to the present modification example, the outer frame 76b of the stirring bar 70C is connected to the driving device 77.

[0154] In the present modification example, the plating solution Ps can be stirred by the stirrer 70C, and thus the bubbles Bu adhering to the hole 12a of the ion resistor 12 can be removed.

[0155] Further, according to the present modification example, the stirrer 70C has the honeycomb structure, and thus the arrangement density of the plurality of stirring members 73 can be increased as compared with a case where the stirrer 70C does not have the honeycomb structure and is composed of, for example, a rod-shaped or plate-shaped member extending in a direction perpendicular to the driving direction of the stirrer 70C (for example, the above-described Figure 5 case). As a result, the plating solution Ps can be effectively stirred by the stirrer 70C. Consequently, the bubbles Bu adhering to the hole 12a of the ion resistor 12 can be effectively removed.

[0156] Further, according to the present modification example, the plurality of stirring members 73 of the stirrer 70C have the square portion 74a, the first protruding portion 74b, and the second protruding portion 74c, and thus the area that can be stirred by the stirrer 70C after the stirrer 70C has moved by a certain distance can be enlarged as compared with, for example, a case where the plurality of stirring members 73 have the square portion 74a but do not have the first protruding portion 74b and the second protruding portion 74c.

[0157] Further, the maximum value of the distance between the first protruding portion 74b and the second protruding portion 74c, that is, the "stirrer width D2" can be larger than the maximum value of the distance between the outer edge in the first direction and the outer edge in the second direction of the plated surface Wfa of the substrate Wf, that is, the "substrate width Dl (this reference numeral is illustrated in Figure 3 FIG. 6). Alternatively, the stirrer width D2 can be smaller than the substrate width Dl. Alternatively, the stirrer width D2 can be the same value as the substrate width Dl.

[0158] However, as compared with the case where the stirrer width D2 is the same as the substrate width Dl or the case where the stirrer width D2 is larger than the substrate width Dl, the case where the stirrer width D2 is smaller than the substrate width Dl can more greatly ensure the gap between the stirrer 70C and the outer peripheral wall 10b of the plating bath 10. As a result, the moving distance of the stirrer 70C in the first direction and the second direction in the inside of the plating bath 10, that is, the stroke of the reciprocating movement of the stirrer 70C can be increased. As a result, the plating solution Ps can be effectively stirred by the stirrer 70C, and thus the bubbles Bu adhering to the hole 12a of the ion resistor 12 can be effectively removed. In this regard, it is preferable that the stirrer width D2 be smaller than the substrate width Dl.

[0159] Further, in the case where the plated surface Wfa of the substrate Wf is circular, the substrate width Dl corresponds to the diameter of the plated surface Wfa. In the case where the plated surface Wfa of the substrate Wf is quadrangular, the substrate width Dl corresponds to the maximum value of the interval between the edge in the first direction and the edge (edge in the second direction) opposite to the edge in the first direction of the plated surface Wfa.

[0160] The plating apparatus 1000 with the stirrer 70C according to the present modification performs the flow explained in the above-described Figure 6 , but is not limited to this configuration. As another example, the plating apparatus 1000 according to the present modification can perform stirring of the plating solution Ps by the stirrer 70C only in either of the case of supplying the plating solution Ps to the plating bath 10 (step S10, step S20) and the case of performing plating processing on the substrate Wf (step S50, step S60). In addition, in the above-described modification 1 Figure 7 ), modification 2 Figure 8 ), the stirrer 70C according to the present modification can be used instead of the stirrer 70.

[0161] The embodiments and modifications of the present application have been described above, but the present application is not limited to this specific embodiment and modification, and various modifications and changes can be made within the scope of the present application recited in the claims.

[0162] Explanation of Reference Numerals

[0163] 10...plating bath; 11...anode; 12...ion resistor; 12a...hole; 30...substrate holder; 70, 70A, 70B, 70C...stirrer; 73...stirring member; 73a...through hole; 74a...square portion; 74b...first protruding portion; 74c...second protruding portion; 1000...plating apparatus; Wf...substrate; Ps...plating solution; Bu...bubble.

Claims

1. A plating device, characterized in that: The plating device comprises: A plating tank is provided with an anode and an ion resistor, wherein the ion resistor is arranged above the anode and has a plurality of holes; a substrate holder for holding a substrate serving as a cathode; as well as a stirring rod, configured to be arranged above the ion resistor and below the substrate, and to be alternately driven in a first direction parallel to the upper surface of the ion resistor and in a second direction opposite to the first direction to stir the plating solution stored in the plating tank; The stirring rod has a honeycomb structure including a plurality of stirring members having polygonal through holes extending in the vertical direction. The plurality of stirring members have, when viewed from above, a quadrilateral square portion; a first protruding portion protruding from the side surface of the square portion on the first direction side toward the first direction side; and a second protruding portion protruding from the side surface of the square portion on the second direction side toward the second direction side.

2. The plating device according to claim 1, characterized in that The maximum distance between the first and second protruding portions, i.e., the paddle width, is smaller than the maximum distance between the outer edges of the plated surface of the substrate in the first direction and the outer edges in the second direction, i.e., the substrate width.

3. The plating device according to claim 1, wherein The first protruding portion protrudes in an arc shape from a side surface of the square portion on the first direction side toward the first direction side. The second protruding portion protrudes in an arc shape from a side surface of the square portion on the second direction side toward the second direction side.

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