Optoelectronic functional film, light-transmitting component, preparation method thereof and vehicle

Abstract

The present invention provides an optoelectronic functional film, a light-transmitting component, a preparation method thereof, and a vehicle. The optoelectronic functional film includes an optoelectronic functional layer, a first conductive layer, and a first substrate layer which are stacked; the first conductive layer is composed of two or more mutually insulated electrical partition regions, and each electrical partition region is connected with a corresponding electrode. The present invention also provides a light-transmitting component including the above optoelectronic functional film, a preparation method of the light-transmitting component, and a vehicle including the light-transmitting component. The optoelectronic functional film provided by the present invention can achieve controllable zonal dimming, and has a simplified structure, a small volume, and is easy to mass-produce.

Description

Technical Field

[0001] The present invention relates to an optoelectronic functional film, a light-transmitting component, a preparation method thereof, and a vehicle. Background Art

[0002] At present, PDLC technology has been widely used as a new technology in automobiles. However, PDLC still faces some technical problems that need to be solved or improved in applications. One technical problem is related to the fabrication of PDLC electrodes: The conventional PDLC film structure is composed of two layers of PET and a liquid crystal polymer. Each layer of PET has an ITO or other conductive layer. The electrodes of the optoelectronic functional film are arranged on the PET with ITO on both sides, and the electrode fabrication is relatively cumbersome.

[0003] Another technical problem is the encapsulation of the film: PDLC films are usually encapsulated with a PVB adhesive film. Small molecules in the middle of the PVB adhesive film can penetrate into the middle functional layer through the gaps of the film, resulting in the failure of the dimming function of the functional layer in the penetrated area. At present, there are mainly two solutions: (1) Replace PVB with EVA. Compared with PVB, EVA has a smaller poisoning effect on PDLC films. However, the glass composed entirely of EVA combination is inferior to that using PVB in some mechanical properties, and there is a lack of mass-produced colored EVA for product color matching. (2) Design the film for anti-permeation. The basic idea of the currently adopted solution is to seal the edge gaps around the film with a specific glue to block the channels for PVB small molecules to diffuse into the film. This method does not require replacing the used PVB adhesive film and does not affect its mechanical properties. However, using glue for edge sealing (encapsulation / sealing) requires certain deep processing, which is time-consuming and laborious. In addition, the existing PDLC films usually adopt the method of staggering and half-cutting the upper and lower substrates and then connecting the electrodes (as shown in Figure 14 )), which makes it necessary to apply glue on both sides during edge sealing, making the process relatively complex. Summary of the Invention

[0004] In order to solve the above problems, the purpose of the present invention is to provide an optoelectronic functional film, a light-transmitting component, a preparation method thereof, and a vehicle. The optoelectronic functional film can achieve controllable zonal dimming, and has a simplified structure, a small volume, and a low processing difficulty.

[0005] To achieve the above purpose, the present invention provides an optoelectronic functional film, which includes an optoelectronic functional layer, a first conductive layer, and a first substrate layer arranged in a stacked manner; the first conductive layer is composed of two or more mutually insulated electrical zones, and each electrical zone is connected with a corresponding electrode.

[0006] In the above-mentioned optoelectronic functional film, the first conductive layer can be disposed between the first substrate layer and the optoelectronic functional layer, can also be disposed on the side of the optoelectronic functional layer facing away from the first substrate layer, or can also be disposed on the side of the first substrate layer facing away from the optoelectronic functional layer.

[0007] In a conventional optoelectronic functional film, usually two conductive layers are provided, and the two conductive layers are simultaneously powered on or off to control the working state of the entire optoelectronic functional film. The above-mentioned optoelectronic functional film of the present invention can achieve controllable dimming of different regions of the optoelectronic functional film by only providing one (or shared) conductive layer (the first conductive layer). Specifically, in the present invention, the first conductive layer is divided into several electrically insulated electrical sub-regions, and electrodes are separately led out from each electrical sub-region, so that the regions of the optoelectronic functional layer covered by the positive projections of the respective electrical sub-regions onto the optoelectronic functional layer can form corresponding mutually independent optical sub-regions. By powering on two or more selected electrodes and the electrical sub-regions, the optical sub-regions corresponding to the powered-on electrical sub-regions can be made to work, while the optical sub-regions corresponding to the other unpowered electrical sub-regions are in a non-active working state, and the states of the respective optical sub-regions are independent of each other, thereby achieving controllable zonal dimming of the optoelectronic functional film.

[0008] According to a specific embodiment of the present invention, the above-mentioned optoelectronic functional layer is used to exert optoelectronic functions, and there is no need to provide electrically connected components in the optoelectronic functional layer. The voltage required for the operation of the optoelectronic functional layer can be generated through the electrical connection between each electrical sub-region in the conductive layer and the power supply. In some specific embodiments, the area of the positive projection of the optoelectronic functional layer onto the conductive layer can be substantially equivalent to the area of the conductive layer.

[0009] According to a specific embodiment of the present invention, the working states of the respective optical sub-regions in the optoelectronic functional layer are independently controlled by the corresponding electrical sub-regions, and these electrical sub-regions are located in the same plane (forming the first conductive layer) and on the same side of the optoelectronic functional layer. As Figure 5 shown, when the optical sub-regions in the optoelectronic functional layer are in the working state, the positive and negative poles of the external power supply are both connected to the first conductive layer.

[0010] In the above-mentioned optoelectronic functional film, in the first conductive layer, the horizontal distance between adjacent electrical sub-regions can be controlled to be between 10 μm and 1 mm, and further can be controlled to be between 10 μm and 100 μm. In the present invention, "between" means a range including both endpoints. For example, the horizontal distance between the above-mentioned adjacent electrical sub-regions can specifically be 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, 200 μm, 300 μm, 400 μm, 500 μm, 600 μm, 700 μm, 800 μm, 900 μm, 1000 μm and other specific values, as well as ranges with any two of the above specific values as endpoints.

[0011] In the above-mentioned optoelectronic functional film, the material of the first conductive layer can be a metal conductor (including metals, metal oxides, etc.) or a non-metal conductor. Among them, the metal conductor can include TCO (transparent conductive metal oxide) and / or silver, etc., and the non-metal conductor can be a carbon material, such as carbon nanomaterials (carbon nanotubes), graphite, etc. In some specific implementation embodiments, the material of the first conductive layer specifically includes one or a combination of two or more of TCO, silver, and carbon materials, and the first conductive layer can be a TCO layer, a nano-silver layer, a carbon layer (such as a graphite layer, a carbon nanotube layer), etc.

[0012] In the above-mentioned first conductive layer, the TCO can include one or a combination of two or more of ITO (indium tin oxide), AZO (aluminum-doped tin oxide), and FTO (fluorinated tin oxide); the silver can be nano-silver, such as nano-silver wires. Then, the first conductive layer can include one or a combination of two or more of an ITO layer, an AZO layer, an FTO layer, a nano-silver layer, and a carbon layer.

[0013] In the above-mentioned optoelectronic functional film, the material of the optoelectronic functional layer can include, but is not limited to, one or a combination of two or more of LC (dye liquid crystal), PDLC (polymer dispersed liquid crystal), GHLC (guest-host liquid crystal), PNLC (polymer network liquid crystal), PSLC (polymer stabilized liquid crystal), PILC (pixel isolation type liquid crystal), EC (electrochromic device), and SPD (suspended particles).

[0014] In the above-mentioned optoelectronic functional film, at least one electrode is respectively connected to each electrical partition. The electrodes connected to each electrical partition can be located on the same side, the opposite side, and / or the adjacent side of the conductive layer. In some specific implementation embodiments, all the electrodes connected to the first conductive layer can be located on the same side of the optoelectronic functional layer (as Figure 5 shown), so as to simplify the preparation process flow of the optoelectronic functional film.

[0015] In the above-mentioned optoelectronic functional film, the orthographic projections of the optoelectronic functional layer and the first conductive layer on the first substrate layer can be respectively located within the surface range of the first substrate layer. At this time, the area of the first substrate layer is respectively greater than or equal to the area of the optoelectronic functional layer and the area of the first conductive layer.

[0016] Furthermore, the area of the optoelectronic functional layer, the area of the first conductive layer, and the area of the first substrate layer can be equal or approximately equivalent.

[0017] Alternatively, further, the orthographic projections of the optoelectronic functional layer and the first conductive layer onto the first substrate layer may also be respectively located within the edges of the first substrate layer, in which case the area of the first substrate layer is respectively larger than the areas of the optoelectronic functional layer and the first conductive layer. At this time, the side surface of the optoelectronic functional film presents a stepped structure, which helps to simplify the encapsulation and lamination process of the optoelectronic functional film.

[0018] According to a specific embodiment of the present invention, the above-mentioned optoelectronic functional film may further include a second substrate layer, and the first substrate layer and the second substrate layer are located on opposite sides of the optoelectronic functional layer.

[0019] In the above-mentioned optoelectronic functional film, the orthographic projection of the second substrate layer onto the first substrate layer may be located within the edges of the first substrate layer, in which case the area of the second substrate layer is smaller than the area of the first substrate layer.

[0020] In the above-mentioned optoelectronic functional film, in the horizontal direction, the minimum distance from each point on the edge of the orthographic projection of the second substrate layer onto the first substrate layer to the edge of the first substrate layer may be between 5 mm and 30 mm. For example, the minimum distance may be specific values such as 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, 10 mm, 15 mm, 20 mm, 25 mm, 30 mm, etc., and ranges with any two of the above specific values as endpoints.

[0021] In the above-mentioned optoelectronic functional film, the orthographic projection of the optoelectronic functional layer onto the second substrate layer may be located within the surface range of the second substrate layer, in which case the area of the optoelectronic functional layer may be less than or equal to the area of the second substrate layer.

[0022] In the above-mentioned optoelectronic functional film, the orthographic projection of the optoelectronic functional layer onto the first conductive layer may be located within the surface range of the first conductive layer, in which case the area of the optoelectronic functional layer may be less than or equal to the area of the first conductive layer. Further, the orthographic projection of the optoelectronic functional layer onto the first conductive layer may be located within the edges of the conductive layer, in which case the area of the optoelectronic functional layer is smaller than the area of the first conductive layer.

[0023] According to a specific embodiment of the present invention, when the above-mentioned optoelectronic functional film further includes other conductive layers in addition to the first conductive layer, the other conductive layers in addition to the first conductive layer may be connected or not connected to an external electrode according to actual needs.

[0024] In the above-mentioned optoelectronic functional film, the optoelectronic functional film may further include a second conductive layer, and the second conductive layer and the first conductive layer may be respectively located on opposite sides of the optoelectronic functional layer.

[0025] In the above-mentioned optoelectronic functional film, the second conductive layer can form an induced electric field covering the optoelectronic functional layer with the first conductive layer in an energized state.

[0026] In the above-mentioned optoelectronic functional film, the second conductive layer may be (directly or indirectly) connected or not connected to an electrode. When the second conductive layer is not connected to an electrode, the second conductive layer can also be used to achieve functions that do not require power supply, such as anti-fogging, heat insulation, etc.; when the second conductive layer is connected to an electrode, before or while the optoelectronic functional layer is working, a direct current can be passed through the electrode to the second conductive layer, and the energized second conductive layer heats up to heat the optoelectronic functional layer, thereby improving the working response speed of the optoelectronic functional layer, especially the working response speed of SPD-based optoelectronic functional layers in a low-temperature environment. Similarly, the optoelectronic functional layer can also be heated by applying electricity to the electrode of the first conductive layer to raise its temperature, improving the working response speed of the optoelectronic functional layer in a low-temperature environment. In the optoelectronic functional film provided by the present invention, zoned dimming, heating, and other functions that do not require power supply can be carried out simultaneously.

[0027] In some specific embodiments, the material of the second conductive layer may be a metal conductor, for example, it may include one or a combination of two or more of an ITO layer, an FTO layer, a Low-E film, an infrared reflection film, a radiation-resistant film, a carbon layer, etc.; it may also be a non-metal conductor, such as carbon materials like carbon nanotubes and graphite.

[0028] In the above-mentioned optoelectronic functional film, the orthographic projection of the second conductive layer on the first substrate layer may be located within the edge of the first substrate layer, and at this time, the area of the second conductive layer is smaller than that of the first substrate layer.

[0029] According to specific embodiments of the present invention, a layer structure formed of an insulating material, i.e., an insulating layer, may be further provided in the optoelectronic functional film. The insulating layer may be located between the first conductive layer and the optoelectronic functional layer or between the second conductive layer and the optoelectronic functional layer. When a relatively large voltage is applied to the first conductive layer or the second conductive layer, the insulating layer can prevent electric breakdown. Similarly, a layer structure formed of a conductive material may also be provided between the first conductive layer and the optoelectronic functional layer and / or between the second conductive layer and the optoelectronic functional layer. This layer structure is other conductive layers in addition to the first conductive layer and the second conductive layer.

[0030] Compared with conventional optoelectronic functional films such as dimming films that require at least two conductive layers to achieve dimming, the above-mentioned optoelectronic functional film provided by the present invention can achieve controllable dimming by only providing one (or shared) conductive layer. The optoelectronic functional film of the present invention has a simpler structure, lower processing difficulty, and a more simplified process flow.

[0031] The present invention also provides a light-transmitting component, which includes a first light-transmitting plate, an adhesive layer, a second light-transmitting plate, and an optoelectronic functional film. The optoelectronic functional film includes the above-mentioned optoelectronic functional film provided by the present invention; the optoelectronic functional film is located between the first light-transmitting plate and the second light-transmitting plate, and the adhesive layer is sandwiched between the first light-transmitting plate and the optoelectronic functional film and between the optoelectronic functional film and the second light-transmitting plate.

[0032] In the above light-transmitting component, the material of the bonding layer may include PVB and / or EVA.

[0033] In a specific embodiment of the present invention, when the areas of the optoelectronic functional layer, the first conductive layer, and the first substrate layer in the optoelectronic functional film are equal or comparable respectively, in the above light-transmitting component, a bonding layer having the same thickness as the optoelectronic functional film may further be clamped on the side surface of the optoelectronic functional film, which can fix the position of the optoelectronic functional film in the light-transmitting component.

[0034] In a specific embodiment of the present invention, when the orthographic projections of the optoelectronic functional layer and the first conductive layer in the optoelectronic functional film on the first substrate layer are respectively located within the edge of the first substrate layer (that is, the area of the first substrate layer is respectively larger than the areas of the optoelectronic functional layer and the first conductive layer), the bonding layer in the light-transmitting component may further include a first bonding layer and a second bonding layer. The first bonding layer is clamped between the first light-transmitting plate and the first substrate layer of the optoelectronic functional film, and the second bonding layer is clamped between the first substrate layer of the optoelectronic functional film and the second light-transmitting plate.

[0035] In the above light-transmitting component, the first bonding layer may include an EVA layer, and the second bonding layer may include a PVB layer and / or an EVA layer. Among them, the first bonding layer including an EVA layer can reduce the poisoning effect on the optoelectronic functional layer in the optoelectronic functional film, which helps the stable performance of the optoelectronic functional layer.

[0036] The present invention also provides a preparation method of the above light-transmitting component. The preparation method includes: stacking a first light-transmitting plate, a raw material film of the bonding layer, an optoelectronic functional film, and a second light-transmitting plate in sequence, heating and molding, and laminating to obtain a dimming glass.

[0037] According to a specific embodiment of the present invention, when the areas of the optoelectronic functional layer, the first conductive layer, and the first substrate layer in the optoelectronic functional film are equal respectively, the above preparation method may further include: an operation of setting a film on the side surface of the optoelectronic functional film after stacking the raw materials of each layer in sequence and before heating and molding. Specifically, it may be to set a raw material film of a bonding layer having the same thickness as the optoelectronic functional film on the side surface of the optoelectronic functional film.

[0038] According to a specific embodiment of the present invention, when the positive projections of the optoelectronic functional layer and the first conductive layer in the optoelectronic functional film are respectively located within the edge of the first substrate layer, the above preparation method may include: stacking the first transparent plate, the raw material film of the first adhesive layer, the optoelectronic functional film, the raw material film of the second adhesive layer, and the second transparent plate in sequence, heating and forming, and laminating to obtain the transparent component; wherein, since a stepped structure is formed on the side surface of the optoelectronic functional film, the raw material films of the first adhesive layer and the second adhesive layer can be melted simultaneously from both sides of the optoelectronic functional film and respectively clamped between the first transparent plate and the optoelectronic functional film and between the optoelectronic functional film and the second transparent plate. Therefore, this preparation method may not include the operation of setting a film on the side surface of the optoelectronic functional film.

[0039] The present invention also provides a vehicle, and the glass of the vehicle includes the above transparent component.

[0040] The beneficial effects of the present invention at least include:

[0041] 1. The optoelectronic functional film provided by the present invention can achieve controllable zonal dimming with only one conductive layer. The structure of the optoelectronic functional film is simplified, the volume is small, and the cost is low.

[0042] 2. All electrodes in the optoelectronic functional film provided by the present invention are connected to the same conductive layer (the first conductive layer), and can be further located on the same side of the optoelectronic functional film, which can greatly reduce the requirements for electrode manufacturing equipment, reduce the difficulty and manufacturing cost of the electrode processing technology, and can also significantly improve the yield of the optoelectronic functional film.

[0043] 3. The transparent component provided by the present invention can effectively prevent the optoelectronic functional film from being penetrated by the toxic film during use, especially under high-temperature conditions, which is beneficial to maintaining the dimming function of the optoelectronic functional film. At the same time, the bonding strength between the layers of the transparent component is high, and it has high mechanical properties and impact resistance, and also has good aging resistance.

[0044] 4. During the production process of the transparent component provided by the present invention, it is also possible not to set a film on the side surface of the optoelectronic functional film, thereby reducing the processing difficulty, simplifying the process flow, and saving material costs. Description of the Drawings

[0045] Figures 1 to 4 It is a schematic structural diagram of the optoelectronic functional film in Example 1.

[0046] Figure 5 It is a schematic structural diagram of the first conductive layer and the electrode in the optoelectronic functional film in Example 1.

[0047] Figure 6 It is a schematic structural diagram of the first conductive layer and the optoelectronic functional layer in the optoelectronic functional film in Example 1.

[0048] Figure 7 Schematic diagram of the electrode lead-out method of the first conductive layer in the optoelectronic functional film of Example 1.

[0049] Figure 8 Physical photo of the optoelectronic functional film of Example 1.

[0050] Figure 9 Physical photo of the optoelectronic functional film in the working state of Example 1.

[0051] Figure 10 Schematic diagram of the structure of the optoelectronic functional film of Example 2.

[0052] Figures 11 to 12 Schematic diagram of the structure of the optoelectronic functional film of Example 3.

[0053] Figure 13 Schematic diagram of the structure of the light-transmitting component of Example 4.

[0054] Figure 14 Schematic diagram of the structure of the existing optoelectronic functional film.

[0055] Symbol description

[0056] First light-transmitting plate 1, first adhesive layer 2, optoelectronic functional film 3, second adhesive layer 4, second light-transmitting plate 5.

[0057] Second substrate layer 31, second conductive layer 32, optoelectronic functional layer 33, first conductive layer 34, first substrate layer 35, electrode 36, first insulating layer 37, second insulating layer 38.

[0058] Etching line 340, external connection area 3400, first electrical partition 341, second electrical partition 342, third electrical partition 343, fourth electrical partition 344, first optical partition 331, second optical partition 332, third optical partition 333, fourth optical partition 334, first electrode 361, second electrode 362, third electrode 363, fourth electrode 364, common electrode 360.

[0059] External electrode 41, conductive copper foil 42, cured silver glue 43, high-temperature tape 44, external power source 45.

[0060] Second substrate layer 61, first substrate layer 62, first conductive layer 63, second conductive layer 64, optoelectronic functional layer 65, first FPC electrode 66, second FPC electrode 67. Detailed implementation manners

[0061] For a clearer understanding of the technical features, objectives, and beneficial effects of the present invention, the technical solution of the present invention will be described in detail below, but it should not be construed as a limitation on the implementable scope of the present invention.

[0062] In the present invention, it is understandable that the orientation or positional relationship indicated by terms such as "upper", "lower", "horizontal", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the invention. Terms such as "first", "second", etc. are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first", "second", etc. may explicitly or implicitly include one or more of such features.

[0063] In the present invention, the orthographic projection refers to the projection along the thickness direction of the optoelectronic functional film.

[0064] In the present invention, the orthographic projection of A onto B being within the surface range of B means that the orthographic projection of A does not exceed the surface range of B. The orthographic projection of A can be completely inside the surface of B. At this time, the edges of the orthographic projection of A do not coincide with the edges of B, or at least part of the edges of the orthographic projection of A coincide with part of the edges of B.

[0065] In the present invention, the orthographic projection of A onto B being within the edge of B means that the orthographic projection of A is completely inside the surface of B, and the edges of the orthographic projection of A do not coincide with the edges of B.

[0066] In the drawings of the present invention, a three-dimensional coordinate system xyz is introduced. The direction from the first substrate layer to the second substrate layer is the direction in which the z-axis coordinate increases; the plane where the optoelectronic functional layer is located is the xy-plane formed by the x-axis and the y-axis, and the electrode lead-out direction is the direction in which the y-axis coordinate increases.

[0067] Example 1

[0068] This example provides an optoelectronic functional film. As Figures 1 to 4 shown, the optoelectronic functional film includes a second substrate layer 31, a second conductive layer 32, an optoelectronic functional layer 33, a first conductive layer 34, and a first substrate layer 35 which are stacked.

[0069] The optoelectronic functional layer 33 is located between the second substrate layer 31 and the first substrate layer 35, and the second conductive layer 32 and the first conductive layer 34 are respectively located on opposite sides of the optoelectronic functional layer 33.

[0070] The optoelectronic functional layer 33 is used to realize optoelectronic functions. Specifically, it can be an optoelectronic functional film operating with an alternating voltage, such as a PDLC film, an SPD film, etc.

[0071] The material of the first conductive layer 34 is one or a combination of two or more of ITO, FTO, AZO, nano silver, carbon nano materials, graphite, etc. Among them, the sheet resistance of ITO and FTO is 100 Ω / sq - 300 Ω / sq.

[0072] The first conductive layer 34 is etched to form (N - 1) etching lines 340 in the first conductive layer 34. Since the etching lines 340 are non-conductive, the first conductive layer is separated into N electrically insulated sub-regions, where N ≥ 2. The number of electrically insulated sub-regions in the first conductive layer can be adjusted according to actual needs. Taking the case where there are 4 electrically insulated sub-regions in the first conductive layer 34 as an example: As Figure 5 shown, there are 3 parallel etching lines 340 in the first conductive layer 34 of this embodiment, and the etching lines 340 divide the first conductive layer 34 into 4 electrically insulated sub-regions. In the horizontal direction (the direction perpendicular to the thickness of the optoelectronic functional film), the first conductive layer 34 is divided into a first electrically insulated sub-region 341, a second electrically insulated sub-region 342, a third electrically insulated sub-region 343, and a fourth electrically insulated sub-region 344 arranged in sequence. The horizontal distance between two adjacent electrically insulated sub-regions is the width of the etching line 340. In this embodiment, this horizontal distance is between 10 - 100 μm.

[0073] External connection regions 3400 are provided at the edges of each electrically insulated sub-region in the first conductive layer 34 for use as electrodes or for leading out electrodes. The positions of the external connection regions 3400 of each electrically insulated sub-region can be adjusted according to actual needs and can be located on the same side, opposite side, and / or adjacent sides of the first conductive layer 34. When the external connection regions 3400 of each electrically insulated sub-region are located on the same side of the first conductive layer 34, it is convenient to lead out the electrodes and also convenient for the fabrication of the common electrode. In some embodiments, the external connection region 3400 can be a region where each electrically insulated sub-region in the first conductive layer 34 protrudes outward relative to the edge of the optoelectronic functional layer 33 to facilitate the leading out of the electrodes.

[0074] In this embodiment, at least one electrode is connected to the external connection region 3400 of each electrically insulated sub-region in the first conductive layer 34. Specifically, a first electrode 361 is connected to the first electrically insulated sub-region 341, a second electrode 362 is connected to the second electrically insulated sub-region 342, a third electrode 363 is connected to the third electrically insulated sub-region 343, and a fourth electrode 364 is connected to the fourth electrically insulated sub-region 344. The first electrode 361, the second electrode 362, the third electrode 363, and the fourth electrode 364 can be located on the same side, opposite side, and / or adjacent sides of the first conductive layer 34. Figure 5 Schematically shows the case where the above electrodes are located on the same side of the first conductive layer 34.

[0075] The material of the second conductive layer 32 includes metal conductors and / or non-metal conductors, specifically, it can be ITO, FTO, Low-E, silver-coated films (double-silver films, triple-silver films, etc.), carbon materials (carbon nanomaterials, graphite), etc. When the first conductive layer 34 is energized (generally alternating current), the second conductive layer 32 can form an induced electric field with the first conductive layer 34, and the induced electric field covers at least part of the optoelectronic functional layer 33, so that the optical partition in the optoelectronic functional layer 33 located within the induced electric field is in an operating state.

[0076] Furthermore, the second conductive layer 32 can also be connected to an electrode. When the optoelectronic functional film is working, direct current can be passed through the second conductive layer 32 through the electrode to heat the optoelectronic functional layer 33, thereby improving the working response speed of the optoelectronic functional layer 33 in a low-temperature environment.

[0077] Alternatively, the second conductive layer 32 can also be used to implement other functions without power supply, such as anti-fogging, heat insulation, etc. In this case, the second conductive layer 32 can be not connected to an electrode.

[0078] In this embodiment, the second conductive layer 32 and the first conductive layer 34 can be in direct contact with the optoelectronic functional layer 33 respectively. The second conductive layer 32 can also have a structure formed by other conductors or insulating materials, such as a transparent substrate, other conductive layers, etc., intervening between it and the optoelectronic functional layer 33; the first conductive layer 34 is in direct contact with the optoelectronic functional layer 33, and can also have a structure formed by other conductors or insulating materials, such as a transparent substrate, other conductive layers, etc., intervening between it and the optoelectronic functional layer 33, as long as there is a corresponding conductive layer on the opposite side of the optoelectronic functional layer 33 for the first conductive layer 34.

[0079] As Figure 1 shown, the first conductive layer 34 and the second conductive layer 32 are in direct contact with the optoelectronic functional layer 33 respectively; as Figure 2 shown, the first conductive layer 34 is in direct contact with the optoelectronic functional layer 33, and there is a second substrate layer 31 intervening between the second conductive layer 32 and the optoelectronic functional layer 33; as Figure 3 shown, the second conductive layer 32 is in direct contact with the optoelectronic functional layer 33, and there is a first substrate layer 35 intervening between the first conductive layer 34 and the optoelectronic functional layer 33; as Figure 4 shown, there is a second substrate layer 31 intervening between the second conductive layer 32 and the optoelectronic functional layer 33, and there is a first substrate layer 35 intervening between the first conductive layer 34 and the optoelectronic functional layer 33. It can be understood that Figures 1 to 4 the positions of the second conductive layer 32 and the first conductive layer 34 in

[0080] Among them, compared with the situation shown in Figures 1 to 3 In the situation shown in Figure 4 and the situation shown in Figure 4In the case where the positions of the second conductive layer 32 and the first conductive layer 34 are interchanged, the second conductive layer 32 and the optoelectronic functional layer 33 are respectively located on the exposed surface of the optoelectronic functional film. This not only allows the electrodes to be arranged on the surface of the dimming layer, reducing the difficulty of electrode fabrication, but also helps to better control the etching of the first conductive layer 34, reducing the difficulty of the etching process and maintaining the cleanliness of the first conductive layer 34 after etching, thereby ensuring the etching quality.

[0081] The positions in the optoelectronic functional layer 33 corresponding to the respective electrical partitions in the first conductive layer 34 are divided into optical partitions. Taking Figure 1 、 Figure 2 the optoelectronic functional film structure shown as an example, the optoelectronic functional layer 33 is divided into the first optical partition 331, the second optical partition 332, the third optical partition 333, and the fourth optical partition 334 as shown in Figure 6 . Among them, the first optical partition 331 corresponds to the region where the first electrical partition 341 of the first conductive layer 34 projects orthogonally onto the optoelectronic functional layer 33 and covers the optoelectronic functional layer 33. The second optical partition 332 corresponds to the region where the second electrical partition 342 of the first conductive layer 34 projects orthogonally onto the optoelectronic functional layer 33 and covers the optoelectronic functional layer 33. The third optical partition 333 corresponds to the region where the third electrical partition 343 of the first conductive layer 34 projects orthogonally onto the optoelectronic functional layer 33 and covers the optoelectronic functional layer 33. The fourth optical partition 334 corresponds to the region where the fourth electrical partition 344 of the first conductive layer 34 projects orthogonally onto the optoelectronic functional layer 33 and covers the optoelectronic functional layer 33. Figure 3 、 Figure 4 In the optoelectronic functional film structure shown, there is a first substrate layer 35 between the optoelectronic functional layer 33 and the first conductive layer 34, and the division of the optoelectronic functional layer 33 is also the same as that shown in Figure 6 .

[0082] In the present invention, the areas of the second substrate layer 31, the second conductive layer 32, the optoelectronic functional layer 33, the first conductive layer 34, and the first substrate layer 35 can be equal, and the dimensions of each layer in the xy plane are the same. At this time, the side edges of each layer are basically flush. This situation is called Structure A.

[0083] Alternatively, the area of the first substrate layer 35 can be respectively larger than the areas of the second substrate layer 31, the second conductive layer 32, the optoelectronic functional layer 33, and the first conductive layer 34, so that the first substrate layer 35 protrudes outward relative to the other layer structures, and a stepped structure is formed on the side of the optoelectronic functional film. That is, the orthographic projections of the second substrate layer 31, the second conductive layer 32, the optoelectronic functional layer 33, and the first conductive layer 34 onto the first substrate layer 35 are located within the edge of the first substrate layer 35. This situation is called Structure B.

[0084] When encapsulating the optoelectronic functional film with Structure A, adhesive films such as PVB and EVA can be used to supplement an adhesive film with the same or comparable thickness as the optoelectronic functional film in the thickness direction of the optoelectronic functional film to make the sides of the optoelectronic functional film flush.

[0085] Compared with the optoelectronic functional film A with Structure A, the optoelectronic functional film B with Structure B can further simplify the process of laminating and encapsulating. During the encapsulation process, adhesive films can be used to encapsulate the upper and lower surfaces of the optoelectronic functional film B respectively, and there is no need to supplement adhesive in the thickness direction of the film. Moreover, the optoelectronic functional film B can separate the upper and lower encapsulating adhesive films by designing a stepped structure, which can prevent harmful colloid molecules from entering the optoelectronic functional layer of the optoelectronic functional film B.

[0086] In this embodiment, the optoelectronic functional film adopts Structure B. The relative sizes of each layer structure in Structure B are described as follows: The relationship between the relative sizes of the second substrate layer 31, the second conductive layer 32, the optoelectronic functional layer 33, the first conductive layer 34 and the first substrate layer 35 can be:

[0087] The orthographic projection of the second substrate layer 31 onto the first substrate layer 35 is located within the edge of the first substrate layer 35: At this time, the area of the second substrate layer 31 is smaller than that of the first substrate layer 35, and all edges of the orthographic projection of the second substrate layer 31 fall inside the surface of the first substrate layer 35 and do not coincide with the edge of the first substrate layer 35. Further, in the horizontal plane (i.e., the xy plane), the minimum distance from each point on the edge of the orthographic projection of the second substrate layer 31 onto the first substrate layer 35 to the edge of the first substrate layer 35 is 5 - 30 mm.

[0088] The orthographic projections of the second conductive layer 32, the optoelectronic functional layer 33, and the first conductive layer 34 onto the first substrate layer 35 are also respectively located within the edge of the first substrate layer 35.

[0089] The orthographic projection of the optoelectronic functional layer 33 onto the second substrate layer 31 is located within the surface range of the second substrate layer 31, and the area of the optoelectronic functional layer 33 is less than or equal to the area of the second substrate layer 31. Specifically, the area of the optoelectronic functional layer 33 can be equal to the area of the second substrate layer 31, and the edge of the orthographic projection of the optoelectronic functional layer 33 onto the second substrate layer 31 coincides with the edge of the second substrate layer 31; or, the area of the optoelectronic functional layer 33 can also be smaller than the area of the second substrate layer 31, and all edges of the orthographic projection of the optoelectronic functional layer 33 onto the second substrate layer 31 do not cross the edge of the second substrate layer 31 (it can be that all edges of the orthographic projection are within the edge of the second substrate layer 31, or a part of the edges of the orthographic projection coincides with the edge of the second substrate layer 31 and the remaining edges of the orthographic projection are within the edge of the second substrate layer 31). In this embodiment, the area of the optoelectronic functional layer 33 is equal to the area of the second substrate layer 31.

[0090] The orthographic projection of the second conductive layer 32 onto the second substrate layer 31 is within the surface range of the second substrate layer 31, and the area of the second conductive layer 32 is less than or equal to the area of the second substrate layer 31.

[0091] The orthographic projection of the optoelectronic functional layer 33 onto the second conductive layer 32 is within the surface range of the second conductive layer 32, and the area of the optoelectronic functional layer 33 is less than or equal to the area of the second conductive layer 32.

[0092] The orthographic projection of the optoelectronic functional layer 33 onto the first conductive layer 34 is within the surface range of the first conductive layer 34, and the area of the optoelectronic functional layer 33 is less than or equal to the area of the first conductive layer 34, that is, all edges of the optoelectronic functional layer 33 do not cross the edges of the first conductive layer 34. In this embodiment, if it is convenient to lead out the electrodes, the area of the optoelectronic functional layer 33 can be less than or slightly less than that of the first conductive layer 34.

[0093] As can be seen from the above, the area relationship between the layers is: optoelectronic functional layer 33 ≤ second conductive layer 32 ≤ second substrate layer 31 < first substrate layer 35; optoelectronic functional layer 33 ≤ first conductive layer 34 < first substrate layer 35.

[0094] In the present invention, the electrodes connected to the first conductive layer 34 can be wires or FPCs. The way of leading out the electrodes can be selected from the following ways:

[0095] 1. Bond a conductive copper foil 42 to the edge of the external connection area 3400 of each electrical partition, and fix the external electrode 41 on the surface of the conductive copper foil 42, thereby leading out the external electrode.

[0096] Further optionally, the conductive copper foil 42 can be fixed to the external connection area 3400 by using a cured silver glue 43. The specific method is as follows: Figure 7 As shown, select a certain width of area (i.e., the external connection area 3400) at the edge of each electrical partition to coat the silver glue. The width is 1 / 5 - 4 / 5 of the electrode length, generally 5 - 10 mm, and the thickness of the silver glue is 5 - 20 μm; after drying, a cured silver glue 43 is formed, and the conductive copper foil 42 is attached to the surface of the cured silver glue 43 to lead out the external electrode 41.

[0097] 2. Bond a copper strip with conductive glue to the edge (external connection area 3400) of the first conductive layer 34, and then lead out the external electrode.

[0098] In the above methods, the electrodes can be protected by using a high-temperature tape 44 for fixation.

[0099] It can be understood that, in order to clearly show each structure, Figure 7There are gaps between the external electrode 41, the conductive copper foil 42, the cured silver glue 43, and the high-temperature tape 44. In actual situations, the above structures are closely attached to each other, and there will be no Figure 7 gaps as shown.

[0100] Furthermore, a common electrode 360 can be provided at the edge of the first conductive layer 34, and the common electrode 360 is connected to the electrodes corresponding to each electrical partition. Figure 8 Figures are the front and back physical photos of the optoelectronic functional film in which the first conductive layer 34 has 6 electrical partitions and a common electrode is provided at the edge. It can be seen that the 6 electrical partitions in the first conductive layer 34 of the optoelectronic functional film are respectively connected with electrodes, and the electrodes corresponding to each electrical partition are connected to the common electrode 360 at the edge of the first conductive layer 34 for extraction. When there are two or more common electrodes 360, the common electrodes 360 can be located on the same side of the first conductive layer 34 to simplify the manufacturing process.

[0101] When the optoelectronic functional film works, the external power supply only needs to be connected to the electrodes in the first conductive layer 34 to achieve controllable dimming. Figure 5 Illustrates the situation where the two poles of the external power supply 45 (alternating current) are respectively connected to the first electrode 361 and the fourth electrode 364. Specifically, the working method of the above optoelectronic functional film can be: applying alternating current to the electrodes connected to at least two electrical partitions in the first conductive layer 34, then the optical partitions corresponding to the electrical partitions connected to the energized electrodes are in the working state, and the optical partitions corresponding to the electrical partitions connected to the non-energized electrodes do not actively work.

[0102] The situations where two partitions in the optoelectronic functional film work include:

[0103] 1. When the first electrode 361 and the second electrode 362 are energized, the first optical partition 331 and the second optical partition 332 work, and the third optical partition 333 and the fourth optical partition 334 do not actively work.

[0104] 2. When the first electrode 361 and the third electrode 363 are energized, the first optical partition 331 and the third optical partition 333 work, and the second optical partition 332 and the fourth optical partition 334 do not actively work.

[0105] 3. As Figure 5 shown, when the first electrode 361 and the fourth electrode 364 are energized, the first optical partition 331 and the fourth optical partition 334 work, and the second optical partition 332 and the third optical partition 333 do not actively work.

[0106] 4. When the second electrode 362 and the third electrode 363 are energized, the second optical partition 332 and the third optical partition 333 work, and the first optical partition 331 and the fourth optical partition 334 do not actively work.

[0107] 5. When power is applied to the second electrode 362 and the fourth electrode 364, the first optical partition 331 and the third optical partition 333 operate, while the second optical partition 332 and the fourth optical partition 334 do not actively operate.

[0108] When more than three optical partitions need to operate simultaneously, two or more electrodes can be connected in parallel and then powered on. The specific operating methods include:

[0109] 1. Connect the first electrode 361 and the second electrode 362 in parallel, and apply power to the first electrode 361 (or the second electrode 362) and the third electrode 363. The first optical partition 331, the second optical partition 332, and the third optical partition 333 operate, while the fourth optical partition 334 does not actively operate.

[0110] It can be understood that when the first electrode 361 is connected in parallel with the third electrode 363 and power is applied to the first electrode 361 (or the third electrode 363) and the second electrode 362, or when the second electrode 362 is connected in parallel with the third electrode 363 and power is applied to the second electrode 362 (or the third electrode 363) and the first electrode 361, the optoelectronic functional film is in a state where the first optical partition 331, the second optical partition 332, and the third optical partition 333 operate, and the fourth optical partition 334 does not actively operate. That is, after selecting the electrodes to be powered on, the specific parallel combination method between the electrodes has no effect on the operating state of the optical partitions corresponding to the electrical partitions connected to the powered electrodes.

[0111] 2. Connect the first electrode 361 and the second electrode 362 in parallel, and apply power to the first electrode 361 (or the second electrode 362) and the fourth electrode 364. The first optical partition 331, the second optical partition 332, and the fourth optical partition 334 operate, while the third optical partition 333 does not actively operate.

[0112] 3. Connect the first electrode 361 and the third electrode 363 in parallel, and apply power to the first electrode 361 (or the third electrode 363) and the fourth electrode 364. The first optical partition 331, the third optical partition 333, and the fourth optical partition 334 operate, while the second optical partition 332 does not actively operate.

[0113] 4. Connect the second electrode 362 and the third electrode 363 in parallel, and apply power to the second electrode 362 (or the third electrode 363) and the fourth electrode 364. The second optical partition 332, the third optical partition 333, and the fourth optical partition 334 operate, while the first optical partition 331 does not actively operate.

[0114] 5. Connect the first electrode 361 and the second electrode 362 in parallel, and connect the third electrode 363 and the fourth electrode 364 in parallel. Apply electricity to the first electrode 361 (or the second electrode 362) and the third electrode 363 (or the fourth electrode 364), and the first optical partition 331, the second optical partition 332, the third optical partition 333, and the fourth optical partition 334 all work.

[0115] Further, while or before the optoelectronic functional layer 33 is in the working state, a direct current can be applied to the second conductive layer 32 to heat the optoelectronic functional layer 33 by using the second conductive layer 32, which can improve the working response speed of the optical partitions where the optoelectronic functional layer 33 is energized. For example, a conventional SPD dimming film has a long working response time in an environment below -10°C. In this embodiment, when the optoelectronic functional layer 33 is an SPD dimming film, the optoelectronic functional layer 33 can be heated by applying a direct current to the second conductive layer 32, thereby shortening the working response time of the optoelectronic functional layer 33 in a low-temperature environment and improving the response speed.

[0116] During the operation of the optoelectronic functional film, the alternating current voltage connected to the electrodes in the first conductive layer 34 can be slightly higher than the conventional voltage. Alternatively, materials such as PET with a low sheet resistance can be used as the second substrate layer 31 and the first substrate layer 35. For example, PET with a sheet resistance of 10 - 40 ohms / square can be used as the second substrate layer 31 and / or the first substrate layer 35 to obtain a low voltage drop.

[0117] Figure 9 For Figure 1 The photo of the optoelectronic functional film (the material of the optoelectronic functional layer 33 is PDLC) after the first electrode 361 and the fourth electrode 364 are respectively connected to the alternating current is shown. It can be seen that in this working state, the first optical partition 331 and the fourth optical partition 334 work, while the second optical partition 332 and the third optical partition 333 do not actively work.

[0118] For Figures 1 to 4 The voltage test is performed on the optoelectronic functional film in the working state. The frequencies measured at the first conductive layer 34 and the second conductive layer 32 are the same. The voltage measured at the first conductive layer 34 is slightly greater than the voltage measured at the second conductive layer 32, but they are basically the same and do not affect the normal operation.

[0119] Embodiment 2

[0120] This embodiment also provides an optoelectronic functional film. The structure of this optoelectronic functional film is similar to that of the optoelectronic functional film in Embodiment 1, except that the optoelectronic functional film in this embodiment further includes a first insulating layer 37 and / or a second insulating layer 38. The first insulating layer 37 is located between the first conductive layer 34 and the optoelectronic functional layer 33, and the second insulating layer 38 is located between the second conductive layer 32 and the optoelectronic functional layer 33. When the optoelectronic functional film includes both of the above two insulating layers, the structure of the optoelectronic functional film is as shown in Figure 10 shown.

[0121] Similarly, according to actual needs, a layer structure formed of a conductive material, that is, a conductive layer other than the first conductive layer and the second conductive layer, may also be provided between the first conductive layer 34 and the optoelectronic functional layer 33 and / or between the second conductive layer 32 and the optoelectronic functional layer 33.

[0122] That is, an insulating layer and / or a conductive layer may be provided between the first conductive layer 34 and the optoelectronic functional layer 33; similarly, an insulating layer and / or a conductive layer may be provided between the second conductive layer 32 and the optoelectronic functional layer 33.

[0123] By providing the first insulating layer 37 and / or the second insulating layer 38, the optoelectronic functional film in this embodiment can prevent the optoelectronic functional layer 33 from being electrically broken down when the working voltage is relatively large; by providing a conductive layer, the optoelectronic functional film can also take into account other functions that require power supply (such as heating, etc.) or functions that do not require power supply (such as heat insulation, anti-fog, etc.).

[0124] Embodiment 3

[0125] This embodiment provides an optoelectronic functional film. The structure of this optoelectronic functional film is similar to that of the optoelectronic functional film in Embodiment 1, except that the optoelectronic functional film in this embodiment does not include the second conductive layer. The structure of the optoelectronic functional film is as shown in Figure 11 shown.

[0126] Further, an insulating layer and / or other conductive layers may be provided between the first conductive layer 34 and the optoelectronic functional layer 33. Figure 12 Illustrates the case where a first insulating layer 37 is provided between the first conductive layer 34 and the optoelectronic functional layer 33.

[0127] Compared with the optoelectronic functional film in Embodiment 1, the optoelectronic functional film in this embodiment can only provide the first conductive layer 34 and omit the second conductive layer 32, which can simplify the structure of the optoelectronic functional film; by providing an insulating layer, it can prevent the optoelectronic functional layer 33 from being electrically broken down when the working voltage is relatively large.

[0128] Embodiment 4

[0129] This embodiment provides a light-transmitting component. As shown in Figure 13As shown, the light-transmitting component includes a first light-transmitting plate 1, a first bonding layer 2, an optoelectronic functional film 3, a second bonding layer 4, and a second light-transmitting plate 5.

[0130] The first light-transmitting plate 1 and the second light-transmitting plate 5 can be made of glass plates respectively. Correspondingly, the light-transmitting component of this embodiment can specifically be a glass component.

[0131] The optoelectronic functional film 3 can be selected from the optoelectronic functional films of Embodiment 1, Embodiment 2, or Embodiment 3. The optoelectronic functional film of this embodiment is the optoelectronic functional film Figure 1 shown in Embodiment 1 (having Structure B in Embodiment 1).

[0132] The optoelectronic functional film 3 is located between the first light-transmitting plate 1 and the second light-transmitting plate 5. The first bonding layer 2 is sandwiched between the first light-transmitting plate 1 and the first substrate layer 35 in the optoelectronic functional film 3, and the second bonding layer 4 is sandwiched between the first substrate layer 35 in the optoelectronic functional film 3 and the second light-transmitting plate 5. The first bonding layer 2 and the second bonding layer 4 are joined, and the joint between the two is located between the upper surface and the lower surface (including the upper surface and the lower surface) of the first substrate layer 35. Among them, the upper surface of the first substrate layer 35 refers to the surface of the first substrate layer 35 that is in contact with the first conductive layer 34, and the lower surface of the first substrate layer 35 refers to the surface opposite to the upper surface. Figure 13 In [description], the joint between the first bonding layer 2 and the second bonding layer 4 is located on the lower surface of the first substrate layer 35.

[0133] The first bonding layer 2 is an EVA layer, and the second bonding layer 4 is a PVB layer or an EVA layer. Among them, the material of the EVA layer can include ordinary EVA or high UV-blocking EVA; the material of the PVB layer can include ordinary PVB or high UV-blocking PVB. The UV cut-off band of the high UV-blocking EVA and the high UV-blocking PVB is ≥390 nm. Preferably, the UV cut-off band is 400 nm.

[0134] The preparation method of the light-transmitting component is as follows: Stack the first light-transmitting plate 1, the raw material film of the first adhesive layer 2, the optoelectronic functional film 3, the raw material film of the second adhesive layer 4, and the second light-transmitting plate 5 in sequence, heat up, and in a high-temperature and high-pressure environment, melt the raw material films of the first adhesive layer 2 and the second adhesive layer 4. The melted raw material film of the first adhesive layer 2 bonds the first light-transmitting plate 1 and the second substrate layer 31 and then continues to flow towards the first substrate layer 35 to encapsulate the side opening between the second substrate layer 31 and the first substrate layer 35; the melted raw material of the second adhesive layer 4 bonds the first substrate layer 35 and the second light-transmitting plate 5 and continues to flow forward along the first substrate layer 35 until it meets the raw material film of the first adhesive layer 2. At this time, the raw material film of the first adhesive layer 2 fills between the first light-transmitting plate 1 and the first substrate layer 35 in the optoelectronic functional film 3, and the raw material film of the second adhesive layer 4 fills between the first substrate layer 35 and the second light-transmitting plate 5 in the optoelectronic functional film 3; perform molding and laminating to obtain the light-transmitting component. Compared with the conventional process method of laminated glass containing a light-adjusting film, the above preparation method provided by the present invention does not require the operation of supplementing the raw material film of the adhesive layer with the same thickness on the side of the optoelectronic functional film, and can significantly simplify the process flow.

[0135] When the second adhesive layer is a PVB layer, since the softening point of EVA (the material of the first adhesive layer) is 70 - 90 °C and the softening point of PVB (the material of the second adhesive layer) > 100 °C, and the fluidities of the two adhesive layer materials are different at the same temperature, the preparation method of the above light-transmitting component can be:

[0136] Stack the first light-transmitting plate 1, the raw material film of the first adhesive layer 2, the optoelectronic functional film 3, the raw material film of the second adhesive layer 4, and the second light-transmitting plate 5 in sequence, heat up, and in a high-temperature and high-pressure environment, melt the raw material film of the first adhesive layer 2. The melted raw material film of the first adhesive layer 2 bonds the first light-transmitting plate 1 and the second substrate layer 31 and then continues to flow towards the first substrate layer 35 until it completely levels and fills the side opening between the second substrate layer 31 and the first substrate layer 35; then melt the raw material film of the second adhesive layer 4, use the melted raw material of the second adhesive layer 4 to bond the first substrate layer 35 and the second light-transmitting plate 5 and continue to flow forward along the first substrate layer 35 until it meets the raw material film of the first adhesive layer 2, perform molding and laminating to obtain the light-transmitting component.

[0137] Compared with the light-transmitting component in which both the first adhesive layer and the second adhesive layer are EVA layers, the mechanical properties of the light-transmitting component with the first adhesive layer being an EVA layer and the second adhesive layer being a PVB layer can be further improved.

[0138] It can be understood that when the optoelectronic functional film 3 is replaced with the structure A in Embodiment 1, the preparation method of the light-transmitting component includes: stacking the first light-transmitting plate 1, the raw material film of the first adhesive layer 2, the optoelectronic functional film 3, the raw material film of the second adhesive layer 4, and the second light-transmitting plate 5 in sequence, arranging the raw material film of the first adhesive layer 2 and / or the raw material film of the second adhesive layer 4 on the side of the optoelectronic functional film 3 (the raw material film can be equal to or equivalent to the thickness of the optoelectronic functional film 3), heating up, melting the raw material film of the first adhesive layer 2 and the raw material film of the second adhesive layer 4 in a high-temperature and high-pressure environment until the melted raw material film fills the space between the optoelectronic functional film 3, the first light-transmitting plate 1, and the second light-transmitting plate 5, forming, and laminating to obtain the light-transmitting component.

[0139] Figure 14 It is a schematic structural diagram of an existing dimming film. As Figure 14 shown, the existing dimming film is composed of a second base material layer 61, a first conductive layer 63, an optoelectronic functional layer 65, a second conductive layer 64, and a first base material layer 62 stacked in sequence. The second base material layer 61 and the first base material layer 62 are offset by half a cut on the same side, and the connection positions of the first FPC electrode 66 and the second FPC electrode 67 with the dimming film are on the side where the second base material layer 61 and the first base material layer 62 are cut. The first FPC electrode 66 is connected to the first conductive layer 63, and their connection position corresponds to the uncut area of the second base material layer 61. The first FPC electrode 66 does not contact the second conductive layer 64; the second FPC electrode 67 is connected to the second conductive layer 64, and their connection position corresponds to the uncut area of the first base material layer 62. The second FPC electrode 67 is not electrically connected to the first conductive layer 63.

[0140] Compared with the design in the existing dimming film where the upper and lower base materials are of the same size or Figure 14 as shown in the front and rear base materials being offset by half a cut up and down, in the present invention, the first base material layer 35 of the optoelectronic functional film protrudes outward from the periphery of other layer structures in the optoelectronic functional film, making the side of the optoelectronic functional film 3 present a stepped structure. The first base material layer 35 can divide the optoelectronic functional film 3 into two spaces in the vertical direction, and the position of the side opening between the second base material layer 31 and the first base material layer 35 projected onto the first base material layer 35 is within the edge of the first base material layer 35. When the optoelectronic functional film is encapsulated in the light-transmitting component with a film in the subsequent process, a non-toxic EVA film is used on the upper surface of the first base material layer 35 of the optoelectronic functional film, and a film with less harmful effect on the optoelectronic functional layer of the film is used to wrap the optoelectronic functional layer 33 of the film and the side opening between the second base material layer 31 and the first base material layer 35. The above structural setting method can reduce the penetration of harmful substances in the middle of the film into the interior of the optoelectronic functional layer from the side, reducing the failure rate of the optoelectronic functional layer of the optoelectronic functional film or avoiding the failure of the optoelectronic functional layer.

Claims

1. An optoelectronic functional film, which comprises an optoelectronic functional layer (33), a first conductive layer (34) and a first substrate layer (35) arranged in a stacked manner; the optoelectronic functional film realizes controllable dimming of different regions of the optoelectronic functional film through the first conductive layer (34), and the optoelectronic functional film is provided with only one conductive layer; The first conductive layer (34) is composed of two or more electrically insulated electrical partitions, and each electrical partition is connected with a corresponding electrode; The regions of the optoelectronic functional layer (33) covered by the orthographic projections of the respective electrical partitions onto the optoelectronic functional layer (33) form corresponding independent optical partitions; Apply alternating current to the electrodes connected to at least two electrical partitions in the first conductive layer (34), with the two poles of the alternating current being respectively connected to the at least two electrical partitions, then the optical partitions corresponding to the electrical partitions connected to the energized electrodes are in a working state, and the optical partitions corresponding to the electrical partitions connected to the non-energized electrodes do not actively work; In the first conductive layer (34), the horizontal distance between adjacent electrical partitions is between 10 μm and 1 mm.

2. The optoelectronic functional film according to claim 1, wherein, In the first conductive layer (34), the horizontal distance between adjacent electrical partitions is between 10 μm and 100 μm.

3. The optoelectronic functional film according to claim 1, wherein, All the electrodes connected to the first conductive layer (34) are located on the same side, the opposite side and / or the adjacent side of the optoelectronic functional layer (33).

4. The optoelectronic functional film according to claim 1, wherein, The material of the optoelectronic functional layer (33) includes one or a combination of two or more of LC, PDLC, GHLC, PNLC, PSLC, PILC, EC, and SPD.

5. The optoelectronic functional film according to claim 1, wherein, The orthographic projections of the optoelectronic functional layer (33) and the first conductive layer (34) onto the first substrate layer (35) are respectively within the surface range of the first substrate layer (35).

6. The optoelectronic functional film according to claim 1, wherein, The optoelectronic functional film further includes a second substrate layer (31), and the second substrate layer (31) and the first substrate layer (35) are respectively located on opposite sides of the optoelectronic functional layer (33).

7. The optoelectronic functional film according to claim 6, wherein The orthographic projection of the second substrate layer (31) onto the first substrate layer (35) is within the edge of the first substrate layer (35).

8. The optoelectronic functional film according to claim 7, wherein, In the horizontal direction, the minimum distance from each point on the edge of the orthographic projection of the second substrate layer (31) onto the first substrate layer (35) to the edge of the first substrate layer (35) is between 5 mm and 30 mm.

9. The optoelectronic functional film according to claim 7, wherein, The orthographic projection of the optoelectronic functional layer (33) onto the second substrate layer (31) is within the surface range of the second substrate layer (31), and the orthographic projection of the optoelectronic functional layer (33) onto the first conductive layer (34) is within the surface range of the first conductive layer (34).

10. A light-transmitting component, wherein, The light-transmitting assembly includes a first light-transmitting plate (1), an adhesive layer, a second light-transmitting plate (5) and an optoelectronic functional film (3), and the optoelectronic functional film (3) includes the optoelectronic functional film according to any one of claims 1-9; The optoelectronic functional film (3) is located between the first light-transmitting plate (1) and the second light-transmitting plate (5), and the adhesive layer is sandwiched between the first light-transmitting plate (1) and the optoelectronic functional film (3) and between the optoelectronic functional film (3) and the second light-transmitting plate (5).

11. The light-transmitting component according to claim 10, wherein, The bonding layer includes a first bonding layer (2) and a second bonding layer (4). The first bonding layer (2) is sandwiched between the first light-transmitting plate (1) and the first substrate layer (35) of the optoelectronic functional film (3), and the second bonding layer (4) is sandwiched between the first substrate layer (35) of the optoelectronic functional film (3) and the second light-transmitting plate (5).

12. The light-transmitting component according to claim 11, wherein, The first bonding layer (2) includes an EVA layer, and the second bonding layer (4) includes a PVB layer and / or an EVA layer.

13. The preparation method of the light-transmitting component according to any one of claims 10 to 12, wherein, The preparation method includes: stacking the first light-transmitting plate (1), the raw material film of the bonding layer, the optoelectronic functional film (3), and the second light-transmitting plate (5) in sequence, heating to form and laminating to obtain the light-transmitting component.

14. The preparation method according to claim 13, wherein, The preparation method includes: stacking the first light-transmitting plate (1), the raw material film of the first bonding layer (2), the optoelectronic functional film (3), the raw material film of the second bonding layer (4), and the second light-transmitting plate (5) in sequence, heating to form and laminating to obtain the light-transmitting component; wherein, the preparation method does not include the operation of disposing a film on the side of the optoelectronic functional film (3).

15. A vehicle, wherein, The glass of the vehicle includes the light-transmitting component according to any one of claims 10-12.

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