Radiation-emitting laser component and method for producing a radiation-emitting laser component

Abstract

The invention proposes a radiation-emitting laser component (1) having: - an edge-emitting laser diode (2) which is configured for generating electromagnetic laser radiation, and - a substrate (3) on which the edge-emitting laser diode (2) is arranged, wherein - the edge-emitting laser diode (2) comprises a contact layer (6), - the substrate (3) has a substrate tab (5), and - the contact layer (6) is mechanically stably connected to the substrate tab (5) by means of a solder layer (7). Furthermore, the invention proposes a method for producing a radiation-emitting laser component (1).

Description

Technical Field

[0001] This invention provides a laser component that emits radiation. Furthermore, this invention provides a method for manufacturing the laser component that emits radiation. Summary of the Invention

[0002] The object of this invention is to provide a laser component that emits particularly reliable radiation. A further objective is to provide a method for manufacturing such a laser component that emits radiation.

[0003] According to at least one embodiment, the laser component emitting radiation includes an edge-emitting laser diode configured to generate electromagnetic laser radiation. For example, the edge-emitting laser diode is configured to emit electromagnetic laser radiation from a facet.

[0004] An edge-emitting laser diode, for example, has a main extending plane. A vertical direction extends perpendicular to the main extending plane, and a lateral direction extends parallel to the main extending plane. Furthermore, the edge-emitting laser diode extends, for example, along a main extending direction, which is oriented parallel to one of the lateral directions.

[0005] For example, the facets are arranged in a plane that extends substantially perpendicular to the main extension direction. "Substantially perpendicular" means that the side faces are inclined at most 5°, and especially at most 1°, relative to the normal to the main extension direction. Electromagnetic laser radiation is particularly monochromatic and coherent laser radiation. Electromagnetic laser radiation is, for example, infrared (IR) radiation, visible light radiation, or ultraviolet (UV) radiation.

[0006] According to at least one embodiment, the laser component emitting radiation includes a substrate on which an edge-emitting laser diode is disposed. For example, the substrate particularly includes a base plate. The base plate has a main extending plane extending in a lateral direction. Furthermore, the base plate, for example, has a main extending direction that extends parallel to the main extending direction of the edge-emitting laser diode.

[0007] The substrate serves as a connection carrier for the edge-emitting laser diode, for example. The edge-emitting laser diode can be energized via the substrate. Furthermore, the edge-emitting laser diode can dissipate heat via the substrate, for example.

[0008] The substrate is formed or constituted using, for example, metallic and / or ceramic materials. In particular, the substrate is formed or constituted using ceramic materials.

[0009] According to at least one embodiment of the laser-emitting component, the edge-emitting laser diode includes a contact layer. The contact layer allows for, for example, energizing the semiconductor body of the edge-emitting laser diode. Furthermore, the semiconductor body of the edge-emitting laser diode can dissipate heat, for example, through a substrate.

[0010] The contact layer has a height of at least 0.05 micrometers and at most 5 micrometers, for example, about 1 micrometer, in the vertical direction. The contact layer comprises or is composed of one or more of the following metals: Cu, Ti, Pt, Au, Ni, Rh, Pd, Cr.

[0011] According to at least one embodiment of the laser component that emits radiation, the substrate has a substrate tab. Specifically, the substrate includes a substrate and a substrate tab. The substrate tab is disposed, for example, on the substrate. For example, the substrate tab is in direct contact with the substrate.

[0012] The substrate patch includes, for example, a top surface and a side surface adjacent to the top surface. The top surface faces the edge-emitting laser diode in particular. The substrate patch extends in the lateral direction, for example, along the main extension direction of the edge-emitting laser diode.

[0013] The top surface of the substrate patch is connected to the recessed outer surface of the substrate patch, for example, via a side surface. For example, the recessed outer surface of the substrate patch only partially covers the substrate. Edge regions of the substrate, for example, do not have the recessed outer surface of the substrate patch.

[0014] The substrate patch may include or be made of metal. For example, the substrate patch may be formed of a material different from the substrate.

[0015] According to at least one embodiment of the laser component emitting radiation, the contact layer and the substrate tab are mechanically and stably connected by means of a solder layer. In particular, the edge-emitting laser diode and the substrate are mechanically and stably connected by means of a solder layer.

[0016] The weld layer, for example, has a height of at least 0.5 micrometers and a maximum of 5 micrometers, such as about 2 micrometers, in the vertical direction. The weld layer may comprise or be composed of metal. The weld layer may be formed, for example, of AuSn, wherein the mass fraction of Au is particularly 70% ± 5%.

[0017] In at least one embodiment, the laser component emitting radiation includes an edge-emitting laser diode and a substrate, the edge-emitting laser diode being configured to generate electromagnetic laser radiation, the edge-emitting laser diode being disposed on the substrate. The edge-emitting laser diode includes a contact layer and the substrate has a substrate tab, wherein the contact layer and the substrate tab are mechanically and stably connected by means of a solder layer.

[0018] For example, it is feasible to separate an edge-emitting laser diode composed of a wafer composite by laser scribing. The semiconductor body of the laser diode is particularly based on GaN. During laser scribing, the GaN material of the semiconductor body of the laser diode decomposes into metallic Ga and N2. Here, the generated nitrogen is particularly volatile, and the resulting gallium is retained as slag on the side of the semiconductor body.

[0019] For example, edge-emitting laser diodes are heated to approximately 300°C when applied to a substrate. Since pure gallium has a liquidus temperature of, for example, 29.76°C, the gallium residue left during separation, especially movable gallium, can lead to direct contact between the laser diode and the substrate without substrate tabs. This, for example, results in short circuits and current shunting.

[0020] The concept of the laser component for emitting radiation described herein is particularly advantageous in that the distance between the edge-emitting laser diode and the substrate is advantageously increased compared to a substrate without a substrate tab. Through this type of spatial separation between the edge-emitting laser diode and the substrate, especially the substrate, gallium residue cannot establish a direct conductive contact between the laser diode and the substrate, especially the substrate. This type of laser component for emitting radiation is advantageously particularly reliable.

[0021] According to at least one embodiment of the laser component that emits radiation, the edge-emitting laser diode has a semiconductor body with a tab.

[0022] For example, a semiconductor body may include a first semiconductor layer sequence of a first conduction type and a second semiconductor layer sequence of a second conduction type different from the first conduction type. The semiconductor body may also include a semiconductor substrate on which the first and second semiconductor layer sequences are disposed.

[0023] For example, the first semiconductor layer sequence is p-type doped and therefore p-type conductive. Furthermore, the second semiconductor layer sequence is, for example, n-type doped and therefore n-type conductive. Thus, the first conduction type is, for example, p-type conduction type, and the second conduction type is, for example, n-type conduction type. Alternatively, the first conduction type is, for example, n-type conduction type, and the second conduction type is, for example, p-type conduction type.

[0024] The semiconductor substrate is grown epitaxially, for example. That is, for example, a first semiconductor layer sequence and a second semiconductor layer sequence are epitaxially grown overlapping each other in the vertical direction and grown on a semiconductor substrate.

[0025] An active region is arranged, for example, between the first and second semiconductor layer sequences. This active region is configured to generate electromagnetic radiation. For example, the electromagnetic radiation generated in the active region is converted into electromagnetic laser radiation within the semiconductor bulk. In contrast to electromagnetic radiation generated solely through spontaneous emission, electromagnetic laser radiation typically has a very high coherence length, a very narrow emission spectrum, and / or a high degree of polarization.

[0026] The semiconductor body is preferably formed of or has a III / V compound semiconductor. The III / V compound semiconductor can be an arsenide compound semiconductor, a nitride compound semiconductor, or a phosphide compound semiconductor.

[0027] For example, the semiconductor substrate is away from the substrate. That is, the first semiconductor layer sequence and the second semiconductor layer sequence are, for example, facing the substrate.

[0028] According to at least one embodiment of the laser component emitting radiation, the tab of the semiconductor body has a top surface and a side surface adjacent to the top surface. For example, the tab of the semiconductor body is formed through a raised region of the tab of the semiconductor body. The tab of the semiconductor body extends, for example, as a protrusion from the recessed outer surface of the semiconductor body. The tab of the semiconductor body extends in the lateral direction, for example, along the main extension direction of the edge-emitting laser diode.

[0029] The recessed outer surface is disposed, for example, on the side of the contact of the semiconductor body. For example, the top surface of the contact of the semiconductor body is directly connected to the recessed outer surface via a side surface of the contact of the semiconductor body adjacent to the top surface. In particular, the top surface, the side surface, and the recessed outer surface form a stepped profile.

[0030] According to at least one embodiment of the laser component emitting radiation, a contact layer covers the top and side surfaces of the contacts of the semiconductor body, as well as the recessed outer surface of the semiconductor body. The contacts of the semiconductor body are, for example, embedded in the contact layer. Embedded here means that the top and side surfaces of the contacts of the semiconductor body are completely covered by the contact layer. For example, the top and side surfaces of the contacts of the semiconductor body are in direct contact with the contact layer.

[0031] The recessed outer surface of the semiconductor body is covered only partially, for example, by a contact layer. For example, at least one edge region of the recessed outer surface lacks a contact layer. In this edge region, the semiconductor body is, for example, freely accessible.

[0032] According to at least one embodiment of the laser component that emits radiation, the semiconductor body's tab and the substrate tab face each other. In particular, the semiconductor body's tab and the substrate tab are positioned facing each other.

[0033] According to at least one embodiment of the laser component emitting radiation, the width of the substrate patch is smaller than the width of the semiconductor body. For example, the width of the substrate patch is at least 20%, and particularly at least 50%, smaller than the width of the semiconductor body. This width extends perpendicularly to the main extension direction of the edge-emitting laser diode and extends along the main extension plane of the edge-emitting laser diode.

[0034] The substrate and the semiconductor body extend, in particular, along the main extension direction of the laser diode. The substrate extends, for example, within a first side and a second side of the semiconductor body in a top view. In this case, the substrate and the semiconductor body completely overlap each other in the lateral direction in a top view.

[0035] The sides of the substrate patch are, for example, spaced apart from the first and second sides of the semiconductor body in the lateral direction. This distance advantageously prevents short circuits between the laser diode and the substrate due to gallium residue.

[0036] According to at least one embodiment of the laser-emitting component, the contacts of the semiconductor body are asymmetrically arranged in the contact layer in the lateral direction. For example, both the contact layer and the contacts of the semiconductor body extend in the lateral direction along the main extension direction of the edge-emitting laser diode. The cross-sections of the contacts passing through the contact layer and the semiconductor body perpendicular to the main extension direction do not, for example, have mirror symmetry along the main extension direction.

[0037] The contacts of the semiconductor body are arranged in the contact layer in a non-centered manner, for example, in the lateral direction. In particular, the contacts of the semiconductor body have a greater distance to the first side of the semiconductor body than to the second side of the semiconductor body opposite to the first side, or vice versa.

[0038] According to at least one embodiment of the laser component that emits radiation, the semiconductor body includes a first semiconductor layer of a first conduction type and a second semiconductor layer of a second conduction type different from the first conduction type, and the first semiconductor layer faces the substrate.

[0039] For example, a contact layer is disposed on the first semiconductor layer. The first semiconductor layer is, for example, only partially covered by the contact layer. For example, at least one edge region of the first semiconductor layer is not covered by the contact layer. In the edge region, the first semiconductor layer is, for example, freely accessible.

[0040] According to at least one embodiment of the laser component that emits radiation, the first conduction type is a p-type conduction type.

[0041] According to at least one embodiment of the laser component emitting radiation, the substrate patch and the contact layer overlap each other in the lateral direction in a top view. For example, the substrate patch and the contact layer are mostly the same size in the lateral direction. Here, "mostly the same size" means that the width of the substrate patch and the width of the contact layer differ from each other by a maximum of + / -10%, and more particularly by a maximum of + / -5%. The width extends perpendicular to the main extension direction of the edge-emitting laser diode.

[0042] The length of the substrate patch is, for example, greater than the length of the contact layer. The length extends along the edge of the laser diode.

[0043] For example, it is possible for the substrate patch and the contact layer to have the same width. For example, at least one side of the substrate patch and at least one side of the contact layer are arranged in a common plane extending in a vertical direction.

[0044] According to at least one embodiment of the laser-emitting component, the weld layer does not extend beyond at least one side of the substrate in the lateral direction. For example, the side of the substrate may have essentially no weld layer. "Essentially no" means that, due to manufacturing reasons, small particles of the welding material in the weld layer can be arranged on the side.

[0045] This advantageously allows for further improvement in the reliability of laser components that emit radiation.

[0046] According to at least one embodiment of the laser component emitting radiation, a metal layer is disposed on a substrate having a base plate. For example, the metal layer completely covers the base plate. Specifically, the metal layer completely covers the top surface of the base plate and the side surface adjacent to the top surface. For example, the metal layer is in direct contact with the base plate, especially with the top surface and the side surface. Furthermore, the substrate is at least partially covered by a contact layer.

[0047] The metal layer, for example, has a height of at least 0.1 micrometers and a maximum of 0.5 micrometers in the vertical direction. The metal layer may include, for example, one or more metals selected from the list of metals, or be composed of metals such as Au, Pt, and Ti. For example, the metal layer may comprise multiple layers, wherein each layer is formed of one of these metals.

[0048] The substrate is remarkably reliably connected to the edge-emitting laser diode via the metal layer.

[0049] According to at least one embodiment of the laser component that emits radiation, the substrate patch has a height of at least 5 micrometers and a maximum of 15 micrometers. For example, the height of the substrate patch in the vertical direction is approximately 10 micrometers.

[0050] Furthermore, a method for manufacturing a laser component that emits radiation is proposed. This method is particularly effective in manufacturing the laser component that emits radiation as described herein. In other words, the laser component that emits radiation as described herein can be manufactured or will be manufactured using the described method. Therefore, all the features disclosed in connection with the laser component that emits radiation are also disclosed in connection with this method, and vice versa.

[0051] According to at least one embodiment of the method, an edge-emitting laser diode including a contact layer is provided.

[0052] According to at least one embodiment of the method, a substrate having a substrate patch is provided. For example, the substrate patch is applied to a substrate.

[0053] According to at least one embodiment of the method, welding material is applied to a substrate patch or contact layer. In particular, the welding material includes the same material as the welding layer.

[0054] The welding material has a height of at least 1 micrometer and at most 5 micrometers, for example, 3 micrometers, in the vertical direction. For example, the height of the welding material is greater than the height of the welding layer.

[0055] According to at least one embodiment of the method, an edge-emitting laser diode is applied to a substrate. The edge-emitting laser diode, particularly the contact layer, and the substrate, particularly the substrate tabs, are directly connected to each other via a welding material.

[0056] According to at least one embodiment of the method, the welding material is heated to a first temperature. The welding material is heated, for example, to connect with an edge-emitting laser diode, particularly a contact layer. Furthermore, the welding material is heated, for example, to connect with a substrate, particularly a substrate tab. This connection is, for example, a brazing process.

[0057] For example, the first temperature has a temperature of at least 200°C and a maximum of 400°C. For example, the first temperature is approximately 300°C. The welding material is in a liquid aggregated state, especially at the first temperature.

[0058] According to at least one embodiment of the method, a weld layer is formed by cooling the welding material. The weld layer is cooled, for example, to a second temperature. The second temperature is, for example, 30°C. Upon cooling, the welding material solidifies. After cooling, the welding material has a solid aggregated state.

[0059] According to at least one embodiment of the method, the contact layer and the substrate patch are mechanically and stably connected by means of a welding layer.

[0060] According to at least one embodiment of the method, welding material is applied asymmetrically in the transverse direction to the substrate patch or contact layer.

[0061] The cross section that passes through the substrate patch and / or contact layer perpendicular to the main extension direction and through the welding material does not, for example, have mirror symmetry along the main extension direction.

[0062] The soldering material is disposed off-center on the substrate patch or contact layer, for example, in the lateral direction. In particular, the soldering material on the first side of the semiconductor body has a greater distance from the second side of the semiconductor body, or vice versa.

[0063] For example, the substrate and contact layer can be divided into two equal-sized portions, namely a first portion and a second portion, by means of a virtual line along the main extension direction. If the semiconductor body's bonding pad is arranged within the first portion, then the second portion has a larger amount of solder material than the first portion, or vice versa. If the semiconductor body's bonding pad is arranged within the first portion, then the second portion has a larger coverage area with solder material than the first portion, or vice versa.

[0064] According to at least one embodiment of the method, depending on the amount of welding material, the weld layer does not extend beyond at least one side of the substrate patch. Specifically, depending on the coverage of the welding material in the first and second portions, the weld layer does not extend beyond the side of the substrate patch. For example, the side of the substrate patch may have virtually no welding material. "Visibly no" means that, due to manufacturing reasons, small particles of the welding material in the weld layer can be arranged on the side.

[0065] According to at least one embodiment of the method, the substrate is heated at least locally using a laser process during heating. The laser process allows for localized heating of the substrate only in the area where the substrate tabs are positioned. For example, this area can be irradiated with an infrared laser.

[0066] According to at least one embodiment of the method, the edge-emitting laser diode is heated at least locally using a laser process during heating. Through the laser process, the edge-emitting laser diode can only be heated in the area where the contact layer is positioned.

[0067] Alternatively, laser diodes and the substrate can be emitted from both sides of the heated edge by means of a heated punch. Attached Figure Description

[0068] The following describes in more detail, with reference to the accompanying drawings and embodiments, a laser component that emits radiation and a method for manufacturing such a laser component.

[0069] This is shown here: Figure 1 and Figure 2 A schematic cross-sectional view of a laser component emitting radiation according to one embodiment is shown, and Figure 3 A schematic cross-sectional view is shown of a method stage in manufacturing a laser component that emits radiation according to an embodiment.

[0070] Identical, similar, or functionally equivalent elements are given the same reference numerals in the accompanying drawings. The size relationships between the figures and the elements shown in them are not considered to be to scale. Rather, individual elements may be shown exaggeratedly for better visibility and / or for better understanding. Detailed Implementation

[0071] according to Figure 1The laser component emitting radiation in one embodiment includes an edge-emitting laser diode 2 and a substrate 3 on which the edge-emitting laser diode 2 is disposed.

[0072] The edge-emitting laser diode 2 has a semiconductor body 8 with a tab 12. The tab 12 of the semiconductor body extends as a protrusion from the recessed outer surface of the semiconductor body 8. The tab 12 of the semiconductor body extends in the lateral direction, for example, along the main extension direction of the edge-emitting laser diode 2.

[0073] The semiconductor body's contact 12 includes a top surface and a side surface adjacent to the top surface, wherein the top surface, the side surface, and the recessed outer surface of the semiconductor body 8 form a stepped profile.

[0074] Contact layer 6 is disposed on semiconductor body 8 and semiconductor body patch 12. In this embodiment, contact layer 6 covers the top and side surfaces of semiconductor body patch 12 and the recessed outer surface of semiconductor body 8. The recessed outer surface of semiconductor body 8 is covered by contact layer 6 only, for example, on the side surface of semiconductor body patch 12. The edge region of the recessed outer surface of semiconductor body 8 is not covered by contact layer 6, and this edge region is disposed in the region on the side surface of semiconductor body 8.

[0075] The contacts 12 of the semiconductor body are asymmetrically arranged in the contact layer 6 in the lateral direction. The distance from the contacts 12 of the semiconductor body to the first side of the semiconductor body 8 is greater than the distance to the second side of the semiconductor body 8 opposite to the first side.

[0076] The contact layer 6 can be divided into two equal-sized portions along the main extension direction by a virtual line 16: a first portion 17 adjacent to the first side of the semiconductor body 8 and a second portion 18 adjacent to the second side of the semiconductor body 8. The chip 12 of the semiconductor body is arranged in the second portion.

[0077] The substrate 3 includes a substrate 4 and a substrate patch 5. The substrate patch 5 is disposed on the substrate 4 and faces the patch 12 of the semiconductor body. The substrate patch 5 extends along the main extension direction of the edge-emitting laser diode 2, just like the patch 12 of the semiconductor body.

[0078] The substrate patch 5 includes a top surface and a side surface adjacent to the top surface. The top surface is connected to the recessed outer surface of the substrate patch 5 via the side surface. The recessed outer surface of the substrate patch 5 only partially covers the substrate 4. The edge regions of the substrate 4 do not have the recessed outer surface of the substrate patch 5.

[0079] The contact layer 6 and the substrate patch 5 have the same dimensions in the lateral direction. That is, the width of the contact layer 6 is equal to the width of the substrate patch 5.

[0080] Furthermore, a solder layer 7 is arranged between the contact layer 6 and the substrate patch 5. The contact layer 6 and the substrate patch 5 are mechanically and stably connected by the solder layer 7. That is, the edge-emitting laser diode 2 and the substrate 3 are mechanically and stably connected to each other by means of the solder layer 7. The edge-emitting laser diode 2 can be energized via this connection, and the heat generated can be dissipated from the edge-emitting laser diode 2 through the connection.

[0081] The substrate patch 5 can be divided into two equal parts along the main extension direction, similar to the contact layer 6, by a virtual line 16: a first part 17 adjacent to the first side of the substrate patch 5 and a second part 18 adjacent to the second side of the substrate patch 5.

[0082] In the first portion 17, the weld layer 7 extends beyond the side surface of the base patch 5 in the lateral direction. The weld layer 7 covers the side surface and the outer surface of the base patch 5 adjacent to the side surface in the first portion 17. In contrast, in the second portion 18, the weld layer 7 does not extend beyond the side surface of the base patch 5 in the lateral direction. In the second portion 18, the side surface of the base patch 5 and the outer surface adjacent to the side surface are not covered by the weld layer 7.

[0083] The substrate patch 5 has, for example, a height of approximately 10 micrometers in the vertical direction. Therefore, the substrate patch 5 creates a distance A between the recessed side of the substrate patch 5 and the recessed outer surface of the semiconductor body 8. Distance A is, for example, approximately 13 micrometers.

[0084] For example, gallium residue 14 is located on the side of the semiconductor body 8, and this gallium residue is obtained through the separation process of the edge-emitting laser diode 2. Due to the distance A facilitated by the substrate patch 5, residue 14 cannot cause short circuits or shunting. In particular, residue 14 cannot establish direct contact between the substrate 3 and the semiconductor body 8. Furthermore, direct contact between residue 14 and the solder layer 7 can be prevented if the solder layer 7 does not extend beyond the side of the substrate patch 5.

[0085] according to Figure 2 In this embodiment, the edge-emitting laser diode 2 of the emitting laser component 1 does not include the semiconductor body's contact patch 12. The semiconductor body 8 includes a first semiconductor layer sequence 9 of a first conduction type and a second semiconductor layer sequence 10 of a second conduction type different from the first conduction type. The first conduction type is a p-conduction type and the second conduction type is an n-conduction type.

[0086] An active region 11 is arranged between the first semiconductor layer sequence 9 and the second semiconductor layer sequence 10. This active region is configured to generate electromagnetic radiation.

[0087] The first semiconductor layer sequence 9 of the p-conductive type is oriented toward the substrate patch 5.

[0088] According to Figure 3 In the method phase of the embodiment, after providing the substrate 3 having the substrate patch 5, the welding material 15 is applied to the substrate patch 5.

[0089] In this embodiment, the substrate patch 5 and its outer surface adjacent to the substrate patch in the lateral direction are covered by a metal layer 13. The metal layer 13 comprises, for example, three layers. The first layer comprises, for example, Ti with a maximum height of 100 nm; the second layer comprises, for example, Pt with a height of at least 50 nm and a maximum of 100 nm; and the third layer comprises, for example, Au with a height of at least 20 nm and a maximum of 30 nm. The third layer is positioned away from the substrate patch 5.

[0090] For example, the third layer, including Au, is advantageously capable of particularly good wetting. The first and second layers, for example, form a barrier layer relative to the substrate patch 5. In this embodiment, the solder material 15 is disposed on the metal layer 13. That is, the solder material 15 is in direct contact with the metal layer 13.

[0091] The substrate patch 5 can be divided into two equal-sized portions, namely a first portion 17 and a second portion 18, along the main extension direction, similar to the contact layer 6 via a virtual line 16. In this embodiment, the first portion has a larger amount of welding material 15 than the second portion. That is, the first portion has a larger coverage area with welding material 15 compared to the second portion.

[0092] To apply the edge-emitting laser diode 2, the welding material 15 is heated so that it exists in a flowable form. It is feasible to apply the welding material 15 asymmetrically, such that when the edge-emitting laser diode 2 is applied to the welding material 15, the welding material 15 is not pressed out of the side surface of the second portion 18 in the lateral direction. In contrast, when applied in the first portion 17, the welding material 15 is pressed out into the side surface of the substrate patch 5 in the lateral direction.

[0093] The width of substrate B1 is, for example, about 0.5 mm, and the width of solder material B2 is, for example, about 0.04 mm. The height of substrate H1 is, for example, about 0.2 mm, and the height of substrate patch H2 is, for example, about 0.01 mm.

[0094] Next, an edge-emitting laser diode 2 including a contact layer 6 is provided. The edge-emitting laser diode 2 is applied to a substrate 3 using a welding material 15. The assembly is then heated to a first temperature. After the welding material 15 cools down, a welding layer 7 is formed by the welding material 15, which mechanically and stably connects the contact layer 6 to the substrate patch 5.

[0095] The features and embodiments described in conjunction with the accompanying drawings can be combined with each other according to other embodiments, even if not all combinations are explicitly described. Furthermore, the embodiments described in conjunction with the accompanying drawings can alternatively or additionally have other features as described in the overview section.

[0096] The invention is not limited thereto by the description of the embodiments. Rather, the invention includes each new feature and each combination of features, even if the feature or combination itself is not explicitly described in the embodiments.

[0097] This patent application claims priority to German patent application 10 2020 132 133.3, the disclosure of which is incorporated herein by reference.

[0098] List of reference numerals

[0099] 1. Laser component emitting radiation

[0100] 2 Edge-emitting laser diodes

[0101] 3. Base

[0102] 4 substrate

[0103] 5. Substrate splicing

[0104] 6. Contact layer

[0105] 7 Weld layer

[0106] 8 Semiconductor body

[0107] 9 First semiconductor layer

[0108] 10 Second semiconductor layer

[0109] 11 Active Area

[0110] 12. Semiconductor body bonding

[0111] 13 Metal Layers

[0112] 14 Residue

[0113] 15 Welding materials

[0114] 16 Virtual lines

[0115] 17 Part 1

[0116] 18 Part Two

[0117] A distance

[0118] B1 The width of the substrate

[0119] B2 Width of welding material

[0120] H1 Height of the substrate

[0121] H2 is the height of the substrate patch.

Claims

1. A laser component (1) that emits radiation, comprising: - An edge-emitting laser diode (2), said edge-emitting laser diode being configured to generate electromagnetic laser radiation, and - Substrate (3), on which the edge-emitting laser diode (2) is arranged, wherein, - The edge-emitting laser diode (2) includes a contact layer (6). - The edge-emitting laser diode (2) has a semiconductor body (8) with a tab (12), wherein - The patch (12) of the semiconductor body is embedded in the contact layer (6), - The substrate (3) has a substrate patch (5). - The substrate patch (5) and the contact layer (6) have the same width. - The contact layer (6) is mechanically and stably connected to the substrate tab (5) by means of the welding layer (7). - The semiconductor body's tab (12) and the substrate tab (5) face each other, and - The width of the substrate patch (5) is smaller than the width of the semiconductor body (8).

2. The laser component (1) emitting radiation according to claim 1, wherein, - The patch (12) of the semiconductor body has a top surface and a side surface adjacent to the top surface, and - The contact layer (6) covers the top surface and the side surface of the patch (12) of the semiconductor body and the outer surface of the semiconductor body (8).

3. The laser component (1) for emitting radiation according to claim 1, wherein, The distance from the patch (12) of the semiconductor body to the first side of the semiconductor body is greater than the distance to the second side of the semiconductor body opposite to the first side.

4. The laser component (1) for emitting radiation according to claim 1, wherein, - The semiconductor body (8) includes a first semiconductor layer (9) of a first conduction type and a second semiconductor layer (10) of a second conduction type different from the first conduction type, and - The first semiconductor layer (9) faces the substrate (3).

5. The laser component (1) emitting radiation according to claim 4, wherein, The first conduction type is the p-type conduction type.

6. The laser component (1) for emitting radiation according to claim 1, wherein, The base patch (5) and the contact layer (6) overlap each other in the top view.

7. The laser component (1) for emitting radiation according to claim 1, wherein, The weld layer (7) does not extend beyond at least one side of the substrate patch (5).

8. The laser component (1) for emitting radiation according to claim 1, wherein, A metal layer (13) is arranged on the substrate (3) having the substrate patch (5).

9. The laser component (1) emitting radiation according to claim 1, wherein, The substrate patch (5) has a height of at least 5 micrometers and a maximum of 15 micrometers.

10. A method for manufacturing a laser component (1) that emits radiation, comprising the following steps: - Provide an edge-emitting laser diode (2) comprising a contact layer (6). - Provide a substrate (3) having a substrate patch (5). - Apply welding material (15) to the substrate patch (5) or the contact layer (6), and - Apply the edge-emitting laser diode (2) to the substrate (3). - The welding material (15) is heated to a first temperature, at which the welding material is in a liquid aggregated state. - A weld layer (7) is formed by cooling the welding material (15), wherein, - The edge-emitting laser diode (2) has a semiconductor body (8) with a tab, wherein - The patch (12) of the semiconductor body is embedded in the contact layer (6), - The contact layer (6) is mechanically and stably connected to the substrate tab (5) by means of the welding layer (7). - The substrate patch (5) and the contact layer (6) have the same width. - The semiconductor body's tab (12) and the substrate tab (5) face each other, and - The width of the substrate patch (5) is smaller than the width of the semiconductor body (8).

11. The method according to claim 10, wherein, The welding material (15) is applied non-centeredly to the substrate patch (5) or the contact layer (6) through the main extension direction perpendicular to the edge-emitting laser diode, passing through the contact layer, the patch, and the cross section of the welding material.

12. The method according to claim 10, wherein, The amount of the welding layer (7) shall not exceed at least one side of the substrate patch (5) according to the amount of the welding material (15).

13. The method according to claim 10, wherein, The substrate is heated at least locally using a laser process during the heating process (3).

14. The method of claim 10, wherein, During the heating process, the edge-emitting laser diode (2) is heated at least locally using a laser process.

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