Deposition chamber and thin film deposition equipment having the same

Abstract

The present invention relates to the field of thin film deposition technology, and discloses a deposition chamber and a thin film deposition device having the deposition chamber, including: a reaction chamber, a transition plate and a flow stabilizing mechanism. A chamber is arranged in the reaction chamber, an exhaust hole is arranged at the bottom of the chamber, and the bottom of the chamber is suitable for installing a heating plate. The transition plate is arranged near the bottom of the chamber, and a first flow cavity is left between the transition plate and the bottom of the chamber. A plurality of through holes are provided on the transition plate, and the through holes are connected to the first flow cavity. The flow stabilizing mechanism is arranged in the chamber, and a second flow cavity is formed between the flow stabilizing mechanism and the transition plate, and the second flow cavity is connected to the first flow cavity through the through holes. A plurality of flow stabilizing holes are evenly distributed in an annular manner on the upper surface of the flow stabilizing mechanism, and the chamber is connected to the second flow cavity through the flow stabilizing holes. The present invention allows the reaction gas flowing on the surface of the wafer to diffuse evenly from the center of the wafer to the periphery of the wafer, thereby ensuring the uniformity of the reaction gas above the wafer, and further ensuring the uniformity of the thin film on the surface of the wafer.

Description

Technical Field

[0001] The present invention relates to the technical field of thin film deposition, and in particular to a deposition chamber and a thin film deposition device having the deposition chamber. Background Art

[0002] Thin film deposition is an important part of wafer processing and manufacturing, which forms a thin film on the surface of the wafer through thin film deposition equipment. Chemical vapor thin film deposition equipment is one of them. It places the wafer in the reaction chamber, and the reaction gas enters the reaction chamber through the gas distribution plate, and uses a radio frequency device to plasmatize the reaction gas. The heating plate in the reaction chamber provides the temperature required for the wafer reaction, so that a thin film is deposited on the wafer.

[0003] In the prior art, the gas distribution plate is located above the wafer, and the reaction gas is sprayed from top to bottom to the wafer carried on the heating plate, and deposition is performed at a certain temperature and pressure. An exhaust hole is eccentrically provided at the bottom of the reaction chamber, and the reacted gas flows through the heating plate and is discharged from the exhaust hole at the bottom of the reaction chamber. When the reacted gas is discharged through the exhaust hole, since it is discharged through a single eccentric exhaust hole, the gas distribution in the reaction chamber is uneven when the reacted gas flows out, which affects the uniformity of the reaction gas above the heating plate to a certain extent, causing the reaction gas flowing on the surface of the wafer on the heating plate to be uneven, and then causing the film on the surface of the wafer to be uneven, affecting the quality of the wafer film deposition. Summary of the invention

[0004] In view of this, the present invention provides a deposition chamber and a thin film deposition device having the deposition chamber to solve the problem that the gas distribution in the reaction chamber is uneven when the post-reaction gas is discharged through the exhaust hole, resulting in uneven film on the surface of the wafer.

[0005] In a first aspect, the present invention provides a deposition chamber, comprising:

[0006] A reaction chamber is provided inside the reaction chamber, and a vent hole communicating with the chamber is provided at the bottom of the reaction chamber; the bottom of the chamber is suitable for installing a heating plate;

[0007] A transition plate is arranged near the bottom of the chamber, a first flow cavity is left between the transition plate and the bottom of the chamber, and the first flow cavity is communicated with the exhaust hole, and a plurality of through holes communicated with the first flow cavity are arranged on the transition plate;

[0008] A flow stabilizing mechanism is arranged between the heating disk and the transition plate, and a second flow cavity is formed between the flow stabilizing mechanism and the transition plate. The second flow cavity is connected with the first flow cavity through the through hole. A plurality of flow stabilizing holes are evenly distributed in an annular shape on the upper surface of the flow stabilizing mechanism, and the chamber is connected with the second flow cavity through the flow stabilizing holes.

[0009] Under the action of the annularly evenly distributed stabilizing holes in the stabilizing mechanism, the reaction gas in the chamber diffuses evenly from the center of the wafer to the surrounding areas. Then, the reaction gas is adjusted twice through the first flow chamber and the second flow chamber, so that the reaction gas flowing on the wafer surface diffuses evenly from the center of the wafer to the surrounding areas, thereby ensuring the uniformity of the reaction gas above the wafer, and then ensuring the uniformity of the film on the wafer surface, and ensuring the quality of the wafer film deposition.

[0010] In an optional embodiment, the flow stabilizing mechanism includes a flow stabilizing surface and a support portion, wherein the support portion is disposed at the bottom of the flow stabilizing surface, the support portion abuts against the transition plate, and the flow stabilizing hole is opened on the flow stabilizing surface.

[0011] The flow stabilizing mechanism is supported by the support part, so that a second flow cavity is formed between the flow stabilizing table and the transition plate, ensuring that the reaction gas in the chamber flows evenly into the second flow cavity, thereby ensuring the deposition quality of the wafer film. At the same time, the support part is abutted against the transition plate to facilitate the disassembly of the flow stabilizing mechanism, and different flow stabilizing mechanisms can be replaced for heating plates of different models and sizes.

[0012] In an optional embodiment, the upper surface of the heating plate, the upper surface of the flow stabilizing table and the upper surface of the transition plate are all arranged in parallel.

[0013] By arranging the upper surface of the heating plate, the upper surface of the flow stabilizing table and the upper surface of the transition plate in parallel, the uniformity of the reaction gas above the wafer is ensured, and the quality of the wafer film deposition is ensured.

[0014] In an optional embodiment, the aperture of the flow stabilizing hole gradually increases from an end close to the exhaust hole to an end far away from the exhaust hole.

[0015] By gradually increasing the aperture of the steady flow hole from the end close to the exhaust hole to the end far from the exhaust hole, the uniformity of the flow of the reaction gas in the chamber is further ensured, and the gas intake of the steady flow hole close to the exhaust hole is prevented from being greater than the gas intake of the steady flow hole far from the exhaust hole, thereby ensuring the uniformity of the reaction gas above the wafer and the quality of the wafer thin film deposition.

[0016] In an optional embodiment, a plurality of the through holes are evenly arranged in an annular shape on the transition plate, so as to ensure that the gas in the second circulation cavity can evenly enter the first circulation cavity from the through holes.

[0017] In an optional implementation, the aperture of the flow stabilizing hole is larger than the aperture of the through hole.

[0018] The reaction gas in the chamber is allowed to enter the second flow chamber in a progressive manner, thereby ensuring the uniformity of the reaction gas above the wafer.

[0019] In an optional implementation, the number of the flow stabilizing holes is less than the number of the through holes.

[0020] The reaction gas in the chamber is allowed to enter the second flow chamber in a progressive manner, and then the gas in the second flow chamber is allowed to enter the first flow chamber, thereby further ensuring the uniformity of the gas above the wafer.

[0021] In an optional embodiment, the first flow cavity and the second flow cavity are both annular flow cavities.

[0022] After circulating through the annular circulation chamber twice, it is discharged from the exhaust hole, which can effectively ensure the uniformity of the reaction gas circulation in the chamber, and at the same time ensure the uniformity of the reaction gas circulation in the first circulation chamber and the second circulation chamber, further ensure the uniformity of the gas above the wafer, and ensure the quality of wafer thin film deposition.

[0023] In an optional embodiment, the flow stabilizing mechanism further includes a filling portion, the filling portion is disposed at the bottom of the flow stabilizing table, the filling portion is in contact with the transition plate, and the filling portion and the supporting portion form the second flow chamber.

[0024] By providing a filling portion to fill the second flow cavity and then fill the chamber, the loss of reaction gas and waste can be effectively reduced.

[0025] In an optional embodiment, the flow stabilizing hole is a round hole or a square hole to ensure the uniformity of the reaction gas flow.

[0026] In an optional embodiment, a connecting portion is provided on the transition plate, and the connecting portion is connected to the inner wall of the chamber.

[0027] The transition plate is arranged in the chamber through the connecting portion to ensure that the transition plate is fixed and stable in the chamber.

[0028] In an optional embodiment, a first through hole is provided in the middle area of ​​the transition plate for the connecting shaft of the heating plate to pass through;

[0029] A second through hole for the connecting shaft to pass through is provided in the middle area of ​​the flow stabilizing mechanism.

[0030] By providing the first through hole and the second through hole, the connecting shaft of the heating plate can pass through the transition plate and the flow stabilizing mechanism and be fixed to the bottom of the chamber.

[0031] In a second aspect, the present invention further provides a thin film deposition device, including a deposition chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0033] Figure 1 is a schematic structural diagram of a deposition chamber according to an embodiment of the present invention;

[0034] Figure 2 for Figure 1 A schematic diagram of the structure from another angle;

[0035] Figure 3 is a cross-sectional view of a deposition chamber according to an embodiment of the present invention;

[0036] Figure 4 for Figure 3 A schematic diagram of the structure from another angle;

[0037] Figure 5 It is a schematic plan view of a transition plate in a deposition chamber according to an embodiment of the present invention;

[0038] Figure 6 It is a structural schematic diagram of a flow stabilizing mechanism in a deposition chamber according to an embodiment of the present invention;

[0039] Figure 7 for Figure 6 Schematic diagram of the structure from another angle.

[0040] Description of reference numerals:

[0041] 1. Reaction chamber; 101. Chamber; 102. Exhaust hole; 2. Heating plate; 201. Connecting shaft; 3. Flow stabilizing mechanism; 301. Flow stabilizing table; 3011. Flow stabilizing hole; 3012. Second through hole; 302. Supporting part; 303. Filling part; 4. Transition plate; 401. Through hole; 402. Connecting part; 403. First through hole; 5. Second circulation chamber; 6. First circulation chamber. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0043] Combine the following Figure 1-7 , describing an embodiment of the present invention.

[0044] In the related art, the gas distribution plate is located above the wafer, and the reaction gas is sprayed from top to bottom to the wafer carried on the heating plate, and deposition is performed at a certain temperature and pressure. An exhaust hole is eccentrically provided at the bottom of the reaction chamber, and the reacted gas flows through the heating plate and is discharged from the exhaust hole at the bottom of the reaction chamber. When the reacted gas is discharged through the exhaust hole, since it is discharged through a single eccentric exhaust hole, the gas distribution in the reaction chamber is uneven when the reacted gas flows out, which affects the uniformity of the reaction gas above the heating plate to a certain extent, causing the reaction gas flowing on the surface of the wafer on the heating plate to be uneven, and then causing the film on the surface of the wafer to be uneven, affecting the quality of the wafer film deposition.

[0045] According to an embodiment of the present invention, a deposition chamber is provided, comprising: a reaction chamber 1, a transition plate 4 and a flow stabilizing mechanism 3. A chamber 101 is provided in the reaction chamber 1. An exhaust hole 102 is provided at the bottom of the chamber 101. The chamber 101 is connected to the outside through the exhaust hole 102. The bottom of the chamber 101 is suitable for installing a heating plate 2. The connecting shaft 201 of the heating plate 2 is detachably arranged at the bottom of the chamber 101. The transition plate 4 is arranged in the chamber 101. The transition plate 4 is arranged close to the bottom of the chamber 101. A first flow chamber 6 is left between the transition plate 4 and the bottom of the chamber 101. The first flow chamber 6 is connected to the exhaust hole 102, so that the reaction gas in the first flow chamber 6 can be discharged through the exhaust hole 102. A plurality of through holes 401 are opened on the transition plate 4, and the through holes 401 are connected to the first flow chamber 6. The flow stabilizing mechanism 3 is arranged in the chamber 101, and the flow stabilizing mechanism 3 is arranged between the heating plate 2 and the transition plate 4. A second flow chamber 5 is formed between the flow stabilizing mechanism 3 and the transition plate 4. The second flow chamber 5 is connected with the first flow chamber 6 through the through hole 401. A plurality of flow stabilizing holes 3011 are evenly distributed in an annular shape on the upper surface of the flow stabilizing mechanism 3. The chamber 101 and the second flow chamber 5 are connected through the flow stabilizing holes 3011, so that the reaction gas in the chamber 101 enters into the second flow chamber 5 through the flow stabilizing holes 3011, and then the reaction gas in the second flow chamber 5 enters into the first flow chamber 6 through the through hole 401, and finally the reaction gas in the first flow chamber 6 is discharged from the exhaust hole 102.

[0046] This deposition chamber is provided with a flow stabilizing mechanism 3 in the chamber 101, and a plurality of flow stabilizing holes 3011 are evenly distributed in an annular manner on the upper surface of the flow stabilizing mechanism 3, so that the reaction gas flowing on the surface of the wafer on the heating plate 2 flows evenly from the center of the wafer to the periphery of the wafer, and then the reaction gas in the chamber 101 enters the second flow chamber 5 evenly from the plurality of flow stabilizing holes 3011, and then the reaction gas in the second flow chamber 5 enters the first flow chamber 6 through the plurality of through holes 401, and finally the reaction gas is discharged from the exhaust hole 102, so that the reaction gas flow is discharged stably. It is equivalent to that the reaction gas in the chamber 101 is uniformly diffused from the center of the wafer to the periphery under the action of the flow stabilizing holes 3011 evenly distributed in an annular manner in the flow stabilizing mechanism 3, and then the reaction gas is adjusted twice by the first flow chamber 6 and the second flow chamber 5, so that the reaction gas flowing on the surface of the wafer is further uniformly diffused from the center of the wafer to the periphery of the wafer, so as to ensure the uniformity of the reaction gas above the wafer, and then ensure the uniformity of the film on the surface of the wafer, and ensure the quality of the wafer film deposition. At the same time, the flow stabilizing mechanism 3 is arranged between the heating disk 2 and the transition plate 4, which can fill the space below the heating disk 2 in the chamber 101 and reduce the consumption of the reaction gas.

[0047] Specifically, Figure 6 and Figure 7 As shown, the flow stabilizing mechanism 3 includes a flow stabilizing table 301 and a support portion 302. The support portion 302 is arranged on the flow stabilizing table 301, and the support portion 302 abuts against the transition plate 4. A plurality of flow stabilizing holes 3011 are evenly distributed in an annular pattern on the flow stabilizing table 301. The flow stabilizing mechanism 3 is supported by the support portion 302, so that a second flow cavity 5 is formed between the flow stabilizing table 301 and the transition plate 4, so as to ensure that the reaction gas in the chamber 101 flows evenly into the second flow cavity 5, thereby ensuring the deposition quality of the wafer film. At the same time, the support portion 302 is abutted against the transition plate 4 to facilitate the disassembly of the flow stabilizing mechanism 3, and different flow stabilizing mechanisms 3 can be replaced for heating plates 2 of different models and sizes.

[0048] Specifically, Figure 3 As shown, the upper surface of the heating plate 2, the upper surface of the flow stabilizing table 301 and the upper surface of the transition plate 4 in the chamber 101 are all arranged in parallel. By arranging the upper surface of the heating plate 2, the upper surface of the flow stabilizing table 301 and the upper surface of the transition plate 4 in parallel, it can further ensure that the reaction gas in the chamber 101 enters the second flow chamber 5 uniformly through the flow stabilizing holes 3011 from the upper surface of the flow stabilizing table 301, and then the reaction gas in the second flow chamber 5 enters the first flow chamber 6 uniformly through the through hole 401 from the upper surface of the transition plate 4, and finally the reaction gas is discharged from the exhaust hole 102, thereby further ensuring the uniformity of the reaction gas above the wafer and ensuring the quality of the wafer thin film deposition.

[0049] In addition, in other embodiments, the upper surface of the heating plate 2, the upper surface of the flow stabilizing table 301 and the upper surface of the transition plate 4 can all be arranged horizontally to ensure the uniformity of the reaction gas above the wafer.

[0050] Specifically, the aperture of the steady flow hole 3011 is gradually increased from the end close to the exhaust hole 102 to the end far away from the exhaust hole 102, that is, the aperture of the steady flow hole 3011 close to the exhaust hole 102 is smaller, and the aperture of the steady flow hole 3011 far away from the exhaust hole 102 is larger, so as to further ensure the uniformity of the flow of the reaction gas in the chamber 101, prevent the steady flow hole 3011 close to the exhaust hole 102 from having more air intake than the steady flow hole 3011 far away from the exhaust hole 102, thereby ensuring the uniformity of the reaction gas above the wafer and ensuring the quality of the wafer thin film deposition.

[0051] Specifically, Figure 5 As shown, the through holes 401 can be evenly distributed in an annular shape on the transition plate 4 to ensure that the gas in the second flow cavity 5 can evenly enter the first flow cavity 6 from the through holes 401 .

[0052] Specifically, Figure 4 , Figure 5 and Figure 6 As shown, the aperture of the flow stabilizing hole 3011 is larger than the aperture of the through hole 401 , so that the reaction gas in the chamber 101 can enter the second flow cavity 5 in a progressive manner, thereby ensuring the uniformity of the reaction gas above the wafer.

[0053] Specifically, Figure 4 , Figure 5 and Figure 6 As shown, the number of the flow-stabilizing holes 3011 is less than the number of the through holes 401, and the reaction gas in the chamber 101 is further allowed to enter the second flow chamber 5 in a layer-by-layer progressive manner, and then the gas in the second flow chamber 5 enters the first flow chamber 6, thereby further ensuring the uniformity of the gas above the wafer.

[0054] Specifically, Figure 3 and Figure 4 As shown, the first flow chamber 6 and the second flow chamber 5 are both annular flow chambers, that is, the reaction gas passes through the annular flow chamber twice and is then discharged from the exhaust hole 102, which can effectively ensure the uniformity of the reaction gas circulation in the chamber 101, and at the same time ensure the uniformity of the reaction gas circulation in the first flow chamber 6 and the second flow chamber 5, further ensure the uniformity of the gas above the wafer, and ensure the quality of wafer thin film deposition.

[0055] In addition, in other embodiments, the first circulation cavity 6 and the second circulation cavity 5 can be configured as a circular circulation cavity, a rectangular circulation cavity, a square circulation cavity or an elliptical circulation cavity, etc., which is not specifically limited here.

[0056] Specifically, Figure 7 As shown, the flow stabilizing mechanism 3 further includes a filling portion 303, which is arranged at the bottom of the flow stabilizing surface 301, and the filling portion 303 abuts against the transition plate 4, and a second flow cavity 5 is formed between the filling portion 303 and the support portion 302. By setting the filling portion 303 to fill the second flow cavity 5, and then fill the chamber 101, the loss of the reaction gas can be effectively reduced, and the waste phenomenon can be reduced. For example, the filling portion 303 can be arranged in a cylindrical shape, and the cylindrical filling portion 303 and the flow stabilizing surface 301 can be arranged coaxially.

[0057] In addition, in other embodiments, the filling portion 303 may also be configured to be a rectangular parallelepiped, a polygon, etc., which is not specifically limited here.

[0058] Specifically, Figure 6 and Figure 7 As shown, the flow stabilizing hole 3011 can be set as a round hole or a square hole, thereby ensuring the uniformity of the flow of the reaction gas. Among them, the through hole 401 can also be set as a round hole or a square hole.

[0059] Specifically, Figure 5 As shown, the transition plate 4 is provided with a connecting portion 402, which is connected to the inner wall of the chamber 101. The transition plate 4 is arranged in the chamber 101 through the connecting portion 402, ensuring that the transition plate 4 is fixed and stable in the chamber 101. For example, the connecting portion 402 can be a connecting hole, and a boss is arranged at the bottom of the chamber 101. The connecting piece passes through the connecting hole so that the transition plate 4 is fixed and arranged on the boss, ensuring that the transition plate 4 is fixed and stable.

[0060] In addition, in other embodiments, the connection portion 402 may also be a buckle or a slot, and the transition plate 4 may be fixed in the chamber 101 by snapping.

[0061] Specifically, Figure 5 , Figure 6 and Figure 7 As shown, a first through hole 403 is set in the middle area of ​​the transition plate 4, and the connecting shaft 201 of the heating disk 2 can pass through the first through hole 403. A second through hole 3012 is set in the middle area of ​​the flow stabilizing mechanism 3, and the connecting shaft 201 of the heating disk 2 passes through the second through hole 3012. The positions of the first through hole 403 and the second through hole 3012 are set correspondingly. By setting the first through hole 403 and the second through hole 3012, the connecting shaft 201 of the heating disk 2 can pass through the transition plate 4 and the flow stabilizing mechanism 3 and be fixed at the bottom of the chamber 101.

[0062] Specifically, Figure 5 As shown, the transition plate 4 can be configured to be disc-shaped; Figure 6 and Figure 7As shown, the flow stabilizing mechanism 3 can be configured to be cylindrical, and during use, the transition plate 4 and the flow stabilizing mechanism 3 can be coaxially configured.

[0063] The working principle of the deposition chamber in this embodiment is:

[0064] By setting a flow stabilizing mechanism 3 in the chamber 101, and a plurality of flow stabilizing holes 3011 are evenly distributed in an annular manner on the upper surface of the flow stabilizing mechanism 3, the reaction gas flowing on the surface of the wafer on the heating plate 2 flows evenly from the center of the wafer to the periphery of the wafer, and then the reaction gas in the chamber 101 enters the second flow chamber 5 evenly from the plurality of flow stabilizing holes 3011, and then the reaction gas in the second flow chamber 5 enters the first flow chamber 6 through the plurality of through holes 401, and finally the reaction gas is discharged from the exhaust hole 102, so that the reaction gas flow is discharged stably. That is, the reaction gas in the chamber 101 is evenly diffused from the center of the wafer to the periphery under the action of the flow stabilizing holes 3011 evenly distributed in an annular manner in the flow stabilizing mechanism 3, and then the reaction gas is adjusted twice by the first flow chamber 6 and the second flow chamber 5, so that the reaction gas flowing on the surface of the wafer is evenly diffused from the center of the wafer to the periphery of the wafer, thereby ensuring the uniformity of the reaction gas above the wafer, thereby ensuring the uniformity of the film on the surface of the wafer, and ensuring the quality of the wafer film deposition. At the same time, the flow stabilizing mechanism 3 is arranged between the heating disk 2 and the transition plate 4, which can fill the space below the heating disk 2 in the chamber 101 and reduce the consumption of the reaction gas.

[0065] According to an embodiment of the present invention, a thin film deposition device is further provided, including a deposition chamber.

[0066] Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations are all within the scope defined by the appended claims.

Claims

1. A deposition chamber, characterized in that: include: A reaction chamber (1) is provided with a chamber (101) therein; the bottom of the reaction chamber (1) is provided with an exhaust hole (102) which is in communication with the chamber (101); the exhaust hole (102) is eccentrically arranged at the bottom of the reaction chamber (1); the bottom of the chamber (101) is suitable for installing a heating plate (2); a transition plate (4) disposed close to the bottom of the chamber (101), a first circulation cavity (6) being left between the transition plate (4) and the bottom of the chamber (101), the first circulation cavity (6) being in communication with the exhaust hole (102), and a plurality of through holes (401) being provided on the transition plate (4) and in communication with the first circulation cavity (6); A flow stabilizing mechanism (3) is arranged between the heating plate (2) and the transition plate (4), a second flow chamber (5) is formed between the flow stabilizing mechanism (3) and the transition plate (4), the second flow chamber (5) is connected to the first flow chamber (6) via the through hole (401), a plurality of flow stabilizing holes (3011) are evenly distributed in an annular shape on the upper surface of the flow stabilizing mechanism (3), and the chamber (101) is connected to the second flow chamber (5) via the flow stabilizing holes (3011); The flow stabilizing mechanism (3) comprises a flow stabilizing surface (301) and a supporting portion (302), wherein the supporting portion (302) is arranged at the bottom of the flow stabilizing surface (301), the supporting portion (302) is in contact with the transition plate (4), and the flow stabilizing hole (3011) is provided on the flow stabilizing surface (301); the flow stabilizing mechanism (3) further comprises a filling portion (303), wherein the filling portion (303) is arranged at the bottom of the flow stabilizing surface (301), the filling portion (303) is in contact with the transition plate (4), and the filling portion (303) and the supporting portion (302) form the second flow cavity (5); The aperture of the flow stabilizing hole (3011) gradually increases from an end close to the exhaust hole (102) to an end away from the exhaust hole (102).

2. The deposition chamber according to claim 1, characterized in that: The upper surface of the heating plate (2), the upper surface of the flow stabilizing table (301) and the upper surface of the transition plate (4) are all arranged in parallel.

3. The deposition chamber according to claim 2, characterized in that: The plurality of through holes (401) are evenly distributed in an annular shape on the transition plate (4).

4. The deposition chamber according to claim 3, characterized in that: The aperture of the flow stabilizing hole (3011) is larger than the aperture of the through hole (401).

5. The deposition chamber according to claim 4, characterized in that: The number of the flow stabilizing holes (3011) is less than the number of the through holes (401).

6. The deposition chamber according to claim 5, characterized in that The first circulation cavity (6) and the second circulation cavity (5) are both annular circulation cavities.

7. The deposition chamber according to claim 6, characterized in that: The flow stabilizing hole (3011) is a round hole or a square hole.

8. The deposition chamber according to claim 7, characterized in that: The transition plate (4) is provided with a connecting portion (402), and the connecting portion (402) is connected to the inner wall of the chamber (101).

9. The deposition chamber according to claim 8, characterized in that: A first through hole (403) is provided in the middle area of ​​the transition plate (4) for the connecting shaft (201) of the heating plate (2) to pass through; A second through hole (3012) for the connecting shaft (201) to pass through is provided in the middle area of ​​the flow stabilizing mechanism (3).

10. A thin film deposition device, characterized in that: include: A deposition chamber as claimed in any one of claims 1 to 9.

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