Semiconductor light emitting device and method of fabricating the same

Abstract

The present disclosure provides a semiconductor light emitting device and a preparation method thereof. The preparation method of the semiconductor light emitting device comprises: forming a mask layer on a substrate, the mask layer being provided with a plurality of openings exposing the substrate; etching the substrate at the openings to form a first recess, and forming a first mirror in the first recess; epitaxially growing a light emitting structure on the first mirror, the light emitting structure comprising a first conductive type semiconductor layer, a multiple quantum well layer and a second conductive type semiconductor layer which are epitaxially grown in sequence; and forming a second mirror on a side of the light emitting structure away from the first mirror. The first mirror is formed in the first recess to form a plurality of first mirrors arranged at intervals, and a patterning step of the first mirror is not required, thereby simplifying the preparation process of the semiconductor light emitting device.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor, and in particular, to a semiconductor light emitting device and a preparation method of the semiconductor light emitting device. BACKGROUND

[0002] In recent years, as a new generation of green light source, semiconductor light emitting devices are widely used in lighting, backlight, display, indication and other fields.

[0003] In order to improve the performance of the semiconductor light emitting device, a resonant cavity is often formed in the semiconductor light emitting device. In the preparation process of the semiconductor light emitting device with the resonant cavity, a first mirror, a light emitting structure and a second mirror are often formed on a substrate in sequence. However, in order to form a plurality of semiconductor light emitting devices, the first mirror also needs to be patterned, and the preparation process is relatively complex. SUMMARY

[0004] The purpose of the present disclosure is to provide a semiconductor light emitting device and a preparation method of the semiconductor light emitting device, which can simplify the preparation process.

[0005] According to one aspect of the present disclosure, a preparation method of a semiconductor light emitting device is provided, comprising:

[0006] forming a mask layer on a substrate, the mask layer being provided with a plurality of openings exposing the substrate;

[0007] etching the substrate at the openings to form a first recess, and forming a first mirror in the first recess;

[0008] epitaxially growing a light emitting structure on the first mirror, the light emitting structure comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer which are epitaxially grown in sequence;

[0009] forming a second mirror on a side of the light emitting structure away from the first mirror.

[0010] Optionally, before forming the first mirror in the first recess, the preparation method further comprises:

[0011] conformally forming a layer of dielectric layer on the first recess and the mask layer;

[0012] removing the dielectric layer on the horizontal bottom surface of the first recess to expose the bottom surface of the first recess.

[0013] Optionally, after forming the second mirror, the preparation method further comprises forming a first electrode electrically connected to the first conductive type semiconductor layer and a second electrode electrically connected to the second conductive type semiconductor layer.

[0014] Optionally, forming the first electrode electrically connected to the first conductivity type semiconductor layer includes:

[0015] A second groove is formed on the side of the semiconductor light-emitting device away from the substrate, and the second groove exposes the side of the first conductivity type semiconductor layer away from the substrate;

[0016] A first electrode is disposed on the first conductivity type semiconductor layer within the second groove.

[0017] Optionally, forming a first electrode electrically connected to the first conductivity type semiconductor layer includes: forming a third groove on the back side of the substrate extending to the first conductivity type semiconductor layer; and disposing a first electrode electrically connected to the first conductivity type semiconductor layer within the third groove.

[0018] Optionally, the first reflector is conductive, and the formation of the first electrode electrically connected to the first conductive type semiconductor layer includes: forming a third groove on the back side of the substrate extending to the first reflector; and disposing of the first electrode electrically connected to the first reflector within the third groove.

[0019] Optionally, the first reflector is a porous conductive structure, which includes alternating stacked first porous conductive layers and second porous conductive layers formed after electrochemical corrosion. The first porous conductive layer has a plurality of first pores, and the second porous conductive layer has a plurality of second pores. The diameters of the first pores and the second pores are different.

[0020] Optionally, the second reflector is a Bragg reflector. Before forming the second reflector, the fabrication method further includes: forming an ITO layer on the side of the light-emitting structure away from the first reflector, and forming the second reflector on the surface of the ITO layer facing away from the first reflector.

[0021] Optionally, multiple light-emitting structures may share the second electrode.

[0022] Optionally, the surface of each light-emitting structure facing away from the first reflector is flush with the surface of the mask layer facing away from the substrate, and multiple light-emitting structures share a single ITO layer.

[0023] Optionally, the light-emitting structure includes an oxide layer, the oxide layer including a low-resistivity region and a high-resistivity region surrounding the low-resistivity region.

[0024] Another aspect of this disclosure provides a semiconductor light-emitting device, which is prepared by the above-described method for preparing a semiconductor light-emitting device.

[0025] The disclosed semiconductor light-emitting device and its fabrication method involve forming a mask layer on a substrate, the mask layer having multiple openings exposing the substrate; etching the substrate at the openings to form a first groove, and forming a first reflector within the first groove; epitaxially growing a light-emitting structure around the first reflector, the light-emitting structure including a first conductivity type semiconductor layer, a multiple quantum well layer, and a second conductivity type semiconductor layer sequentially epitaxially grown; and forming a second reflector on the side of the light-emitting structure away from the first reflector. Forming multiple spaced first reflectors within the first groove eliminates the need for a patterning step for the first reflectors, simplifying the fabrication process of the semiconductor light-emitting device. Alternatively, because a dielectric layer is added to the sidewall, and the material of the dielectric layer is different from the substrate material, subsequent epitaxial structures are difficult to grow on the sidewall of the first groove, thereby reducing stress in the subsequent epitaxial structures and improving the performance of the semiconductor light-emitting device of this embodiment. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a flowchart of the method for fabricating a semiconductor light-emitting device according to Embodiment 1 of this disclosure;

[0028] Figure 2 This is a schematic diagram showing the completion of step S100 in the method for fabricating a semiconductor light-emitting device according to Embodiment 1 of this disclosure;

[0029] Figure 3 This is a schematic diagram showing the completion of step S200 in the method for fabricating a semiconductor light-emitting device according to Embodiment 1 of this disclosure;

[0030] Figure 4 This is a schematic diagram of the first reflector in the semiconductor light-emitting device according to Embodiment 1 of this disclosure;

[0031] Figure 5 This is a schematic diagram showing the completion of step S300 in the method for fabricating a semiconductor light-emitting device according to Embodiment 1 of this disclosure;

[0032] Figure 6 This is a schematic diagram showing the completion of step S400 in the method for fabricating a semiconductor light-emitting device according to Embodiment 1 of this disclosure;

[0033] Figure 7 This is a schematic diagram showing the completion of step S500 in the method for fabricating a semiconductor light-emitting device according to Embodiment 1 of this disclosure;

[0034] Figure 8 This is a schematic diagram showing the completion of step S220 in the method for fabricating a semiconductor light-emitting device according to Embodiment 2 of this disclosure;

[0035] Figure 9 This is a schematic diagram showing the completion of step S230 in the method for fabricating a semiconductor light-emitting device according to Embodiment 2 of this disclosure;

[0036] Figure 10 This is a schematic diagram of the structure of the semiconductor light-emitting device according to Embodiment 3 of this disclosure;

[0037] Figure 11 This is a schematic diagram of the structure of the semiconductor light-emitting device according to Embodiment 4 of this disclosure.

[0038] Explanation of reference numerals in the attached figures:

[0039] 1. Substrate; 2. Mask layer; 201. Opening; 3. First reflector; 301. First porous conductive layer; 302. Second porous conductive layer; 4. Light-emitting structure; 401. First conductivity type semiconductor layer; 402. Active layer; 403. Second conductivity type semiconductor layer; 41. Oxide layer; 411. High-resistivity region; 412. Low-resistivity region; 5. Second reflector; 6. Dielectric layer; 7. ITO layer; 8. First electrode; 9. Second electrode; 101. First groove; 102. Second groove; 103. Third groove; 4011. First side surface; 4012. Second side surface. Detailed Implementation

[0040] The technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. Based on the embodiments of this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0041] In the following description, when referring to the accompanying drawings, the same numbers in different drawings denote the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this disclosure. Rather, they are merely examples of apparatuses consistent with some aspects of this disclosure as detailed in the appended claims.

[0042] Example 1

[0043] Embodiment 1 of this disclosure provides a semiconductor light-emitting device and a method for fabricating the semiconductor light-emitting device. For example... Figure 1 As shown, the method for fabricating this semiconductor light-emitting device may include steps S100 to S400, wherein:

[0044] Step S100: A mask layer 2 is formed on a substrate 1, the mask layer 2 having a plurality of openings 201 that expose the substrate 1;

[0045] Step S200: The substrate 1 is etched at the opening 201 to form a first groove 101, and a first reflector 3 is formed in the first groove 101.

[0046] Step S300: A light-emitting structure 4 is epitaxially grown on the first reflector 3. The light-emitting structure 4 includes a first conductivity type semiconductor layer 401, a multiple quantum well layer 402, and a second conductivity type semiconductor layer 403, which are epitaxially grown sequentially.

[0047] Step S400: A second reflector 5 is formed on the side of the light-emitting structure 4 away from the first reflector 3.

[0048] The method for fabricating a semiconductor light-emitting device according to Embodiment 1 of this disclosure involves a mask layer 2 having multiple openings 201, and first grooves 101 being etched at the multiple openings 201. First reflectors 3 are formed in each of the first grooves 101, and the first reflectors 3 are spaced apart from each other. This eliminates the need for a patterning step for the first reflectors, thus simplifying the fabrication process of the semiconductor light-emitting device.

[0049] The following is a detailed description of each step in the fabrication method of the semiconductor light-emitting device according to Embodiment 1 of this disclosure:

[0050] In step S100, a mask layer 2 is formed on a substrate 1, the mask layer 2 having a plurality of openings 201 that expose the substrate 1.

[0051] like Figure 2 As shown, substrate 1 can be a III-V or II-VI semiconductor material. For example, substrate 1 can be a silicon substrate. Of course, substrate 1 can also be a silicon carbide substrate, but this embodiment is not limited to this. Substrate 1 can also be a sapphire substrate. Substrate 1 can also be a composite substrate, such as a gallium nitride-silicon carbide composite substrate formed by epitaxial growth of gallium nitride on silicon carbide, or a silicon arsenide-germanium composite substrate formed by epitaxial growth of silicon arsenide on germanium. Composite substrates alleviate the problems of lattice mismatch and thermal mismatch that exist when using ordinary sapphire substrates to grow gallium nitride-based semiconductor materials, thereby reducing the cost of existing gallium nitride-based semiconductor growth substrates and improving the quality of the light-emitting structure of the subsequently grown gallium nitride-based semiconductor materials.

[0052] The mask layer 2 can be made of silicon oxide, such as SiO2. The opening 201 penetrates the mask layer 2 in its thickness direction. The number of openings 201 can be two, four, or more, and the openings 201 are spaced apart. For example, step S100 may include: forming a dielectric material layer on a substrate 1; patterning the dielectric material layer to form the mask layer 2, which has openings 201 exposing the substrate 1. The dielectric material layer can be prepared by vapor deposition, or by other methods. In embodiments of this disclosure, the dielectric material layer can be patterned using photolithography.

[0053] In step S200, the substrate 1 is etched at the opening 201 to form a first groove 101, and a first reflector 3 is formed in the first groove 101.

[0054] like Figure 3 As shown, in this embodiment of the present disclosure, the substrate 1 can be epitaxially grown using atomic layer deposition. Of course, the substrate 1 can also be epitaxially grown using chemical vapor deposition, but this embodiment is not limited to these methods. The first reflecting mirror 3 can be a Bragg reflector.

[0055] Furthermore, the first reflector 3 of the Bragg reflector can be a porous conductive structure. For example... Figure 4 As shown, the porous conductive structure may include alternating stacks of a first porous conductive layer 301 and a second porous conductive layer 302 formed through electrochemical etching. The first porous conductive layer 301 may contain multiple first pores, and the second porous conductive layer 302 may contain multiple second pores, with the diameters of the first and second pores being different. The significant difference in refractive index between the first porous conductive layer 301 and the second porous conductive layer 302 improves the reflectivity of the first reflecting mirror 3.

[0056] The first reflector 3 can be made of a group III-V semiconductor material. Taking an example where the first reflector 3 includes alternately stacked first porous conductive layers 301 and second porous conductive layers 302, both the first porous conductive layer 301 and the second porous conductive layer 302 are gallium nitride-based materials. For instance, the material of the first porous conductive layer 301 is n-type GaN or n-type AlInGaN, and the material of the second porous conductive layer 302 is u-type GaN or u-type AlInGaN.

[0057] Furthermore, before forming the first reflector 3, this embodiment of the present disclosure may form a buffer layer within the first groove 101, with the first reflector 3 formed on the side of the buffer layer facing away from the substrate 1. In practice, the first groove 101 can be etched using either dry etching or wet etching. Dry etching can be inductively coupled plasma etching (ICP). The etching gas may include Cl2 and BCl3. The etching solution for wet etching can be an H3PO4 solution or a KOH solution.

[0058] In step S300, a light-emitting structure 4 is epitaxially grown on the first reflector 3. The light-emitting structure 4 includes a first conductivity type semiconductor layer 401, a multi-quantum well layer 402, and a second conductivity type semiconductor layer 403, which are epitaxially grown sequentially.

[0059] like Figure 5 As shown, the light-emitting structure 4 may include a first conductivity type semiconductor layer 401, an active layer 402, and a second conductivity type semiconductor layer 403 stacked together. The active layer 402 may be at least one of a single quantum well structure, a multiple quantum well (MQW) structure, a quantum wire structure, and a quantum dot structure. Taking a multiple quantum well structure as an example, the active layer 402 may include alternating potential well layers and potential barrier layers. The first conductivity type is different from the second conductivity type. The first conductivity type semiconductor layer 401 may be a p-type semiconductor layer, and the second conductivity type semiconductor layer 403 may be an n-type semiconductor layer, but this embodiment does not specifically limit this. Furthermore, the surface of each light-emitting structure 4 located within each opening 201 facing away from the substrate 1 may be flush with the surface of the mask layer 2 facing away from the substrate 1.

[0060] In step S400, a second reflector 5 is formed on the side of the light-emitting structure 4 away from the first reflector 3.

[0061] like Figure 6 As shown, the reflectivity of the second reflector 5 can be less than that of the first reflector 3, but this embodiment does not impose any special limitations on this. The second reflector 5 can be a Bragg reflector, and the material is selected from a group of multi-periodic materials including TiO2 / SiO2, Ti3O5 / SiO2, Ta2O5 / SiO2, Ti3O5 / Al2O3, ZrO2 / SiO2, or TiO2 / Al2O3, but this embodiment is not limited to this.

[0062] Before forming the second reflector 5, this embodiment may further include forming an ITO layer 7 on the side of the light-emitting structure 4 away from the first reflector 3.

[0063] The second reflector 5 is formed on the surface of the ITO layer 7 facing away from the first reflector 3. Taking the surface of each light-emitting structure 4 facing away from the substrate 1 as being flush with the surface of the mask layer 2 facing away from the substrate 1 as an example, multiple light-emitting structures 4 can share one ITO layer 7.

[0064] After the second reflecting mirror 5 is formed, as Figure 1 As shown, the preparation method of this embodiment may further include:

[0065] Step S500: Form a first electrode 8 electrically connected to the first conductivity type semiconductor layer 401 and a second electrode 9 electrically connected to the second conductivity type semiconductor layer 403.

[0066] like Figure 7 As shown, the first conductive semiconductor layer 401 has a first side surface 4011 and a second side surface 4012. The first side surface 4011 faces away from the surface of the substrate 1, and the second side surface 4012 is the other surface close to the substrate 1. A second groove 102 is formed on the side of the semiconductor light-emitting device facing away from the substrate 1, exposing the first side surface 4011 of the first conductive semiconductor layer 401 facing away from the substrate 1. A first electrode 8 is formed on the first conductive semiconductor layer 401 within the second groove 102, that is, the first electrode 8 is formed on the first side surface 4011 of the first conductive semiconductor layer 401, and a second electrode 9 is electrically connected to the second conductive semiconductor layer 403. Multiple light-emitting structures 4 can share the second electrode 9, and the second electrode 9 can contact the ITO layer 7.

[0067] Example 2

[0068] The semiconductor light-emitting device and its fabrication method in Embodiment 2 of this disclosure are largely the same as those in Embodiment 1 of this disclosure, except that step S200 includes:

[0069] S210: The substrate 1 is etched at the opening 201 to form the first groove 101;

[0070] S220: A dielectric layer 6 is formed conformally on the first groove 101 and the mask layer 2;

[0071] S230: Remove the dielectric layer 6 on the horizontal bottom surface of the first groove 101, while retaining the dielectric layer 6 on the side wall of the first groove 101;

[0072] S240: A first reflecting mirror 3 is formed in the first groove 101.

[0073] like Figure 8Before forming the first reflector 3 within the first groove 101, the fabrication method further includes: conformally forming a dielectric layer 6 on the first groove 101 and the mask layer 2; as shown Figure 9 As shown, the dielectric layer on the horizontal bottom surface of the first groove 101 is removed. Because the thickness of the dielectric layer 2 on the horizontal bottom surface of the first groove 101 is less than the thickness of the dielectric layer 6 on the sidewall of the first groove 101, the dielectric layer 6 on the horizontal bottom surface of the first groove 101 can be easily removed by etching, while the dielectric layer 6 on the sidewall of the first groove 101 is retained. In Embodiment 2, compared with Embodiment 1, because a dielectric layer 6 is added to the sidewall, and the material of the dielectric layer 6 is different from the material of the substrate 1, it is difficult for the subsequent epitaxial structure to grow on the sidewall of the first groove 101, thereby reducing the stress in the subsequent epitaxial structure and improving the performance of the semiconductor light-emitting device of this embodiment.

[0074] Example 3

[0075] The semiconductor light-emitting device and its fabrication method in Embodiment 3 of this disclosure are largely the same as those in Embodiment 1 or Embodiment 2 of this disclosure, with the only difference being: Figure 10 As shown, the position of the first electrode 8 is different. A third groove 103 extending to the first conductive type semiconductor layer is formed on the back side of the substrate 1. The first electrode 8 is disposed in the third groove 103 and electrically connected to the first conductive type semiconductor layer 401.

[0076] In this embodiment, if the first reflector 3 is conductive, for example, the first reflector 3 is a metal reflector, or the first reflector 3 is a porous conductive structure, then the third groove 103 is formed on the back side of the substrate 1 and extends to the first reflector 3, and the first electrode 8 is disposed in the third groove 103 and electrically connected to the first reflector 3.

[0077] The semiconductor light-emitting devices of Embodiments 1 to 3 of this disclosure can be resonant cavity LEDs. Taking a first conductivity type semiconductor layer 401 as a p-type semiconductor layer and a second conductivity type semiconductor layer 403 as an n-type semiconductor layer as an example, the first electrode 8 is a p-type electrode and the second electrode 9 is an n-type electrode. The materials of the first electrode 8 and the second electrode 9 can both be selected from at least one of gold, silver, aluminum, chromium, nickel, platinum, and titanium.

[0078] Example 4

[0079] The semiconductor light-emitting device and its preparation method in Embodiment 4 of this disclosure are largely the same as those in Embodiments 1 to 3 of this disclosure, with the only difference being the light-emitting structure.

[0080] likeFigure 11 As shown, the light-emitting structure 4 of Embodiment 4 of this disclosure may include an oxide layer 41. This oxide layer 41 may be stacked with the aforementioned light-emitting layer. The oxide layer 41 may include a low-resistance region 412 and a high-resistance region 411. The high-resistance region surrounds the low-resistance region, and the low-resistance region forms a current aperture, i.e., an internal current window, thereby enabling the light-emitting device of this embodiment to constitute a vertical-cavity surface-emitting laser (VCSEL). The low-resistance region also forms the optical path of the VCSEL.

[0081] like Figure 11 As shown, taking an example where the light-emitting layer includes a first conductive semiconductor layer 401, an active layer 402, and a second conductive semiconductor layer 403 stacked together, the oxide layer 41 can also be located on the side of the second conductive semiconductor layer 403 away from the active layer 402. Alternatively, the oxide layer 41 can also be located within the active layer 402. The number of oxide layers 41 can be multiple. For example, if there are two oxide layers 41, one oxide layer 41 can be located within the active layer 402, and the other oxide layer 41 can be located on the side of the second conductive semiconductor layer 403 away from the active layer 402. In this embodiment, the oxide layer 41 can be obtained by oxidizing a single-layer structure of AlInN, AlGaAs, AlAs, or AlN, or by oxidizing AlInN / GaN, AlN / GaN, AlGaAs / GaN, or AlAs / GaN.

[0082] The above description is merely a preferred embodiment of this disclosure and is not intended to limit this disclosure in any way. Although this disclosure has been disclosed above with reference to a preferred embodiment, it is not intended to limit this disclosure. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the technical solution of this disclosure. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of this disclosure without departing from the content of the technical solution of this disclosure shall still fall within the scope of the technical solution of this disclosure.

Claims

1. A method for fabricating a semiconductor light-emitting device, characterized in that, include: A mask layer is formed on a substrate, the mask layer having a plurality of openings that expose the substrate, the plurality of openings being spaced apart; A first groove is formed by etching the substrate at the opening, and a first reflector is formed within the first groove. The first reflector is a porous conductive structure, which includes alternating stacked first porous conductive layers and second porous conductive layers formed after electrochemical corrosion. The first porous conductive layer has a plurality of first pores, and the second porous conductive layer has a plurality of second pores. The diameters of the first pores and the second pores are different. A light-emitting structure is epitaxially grown on the first reflector, the light-emitting structure comprising a first conductivity type semiconductor layer, a multiple quantum well layer and a second conductivity type semiconductor layer epitaxially grown sequentially. A second reflector is formed on the side of the light-emitting structure away from the first reflector.

2. The method for fabricating a semiconductor light-emitting device according to claim 1, characterized in that, Before forming the first reflector within the first groove, the fabrication method further includes: A dielectric layer is formed conformally on the first groove and the mask layer; Remove the dielectric layer on the horizontal bottom surface of the first groove to expose the bottom surface of the first groove.

3. The method for fabricating a semiconductor light-emitting device according to claim 1, characterized in that, After forming the second reflector, the fabrication method further includes forming a first electrode electrically connected to the first conductivity type semiconductor layer and a second electrode electrically connected to the second conductivity type semiconductor layer.

4. The method for fabricating a semiconductor light-emitting device according to claim 3, characterized in that, The preparation method further includes: A second groove is formed on the side of the semiconductor light-emitting device away from the substrate, and the second groove exposes the side of the first conductivity type semiconductor layer away from the substrate; A first electrode is disposed on the first conductivity type semiconductor layer within the second groove, and a second electrode is formed that is electrically connected to the second conductivity type semiconductor layer.

5. The method for fabricating a semiconductor light-emitting device according to claim 3, characterized in that, A third groove extending to the first conductivity type semiconductor layer is formed on the back side of the substrate, and a first electrode is disposed in the third groove and electrically connected to the first conductivity type semiconductor layer.

6. The method for fabricating a semiconductor light-emitting device according to claim 3, characterized in that, The first reflector is conductive, and a third groove extending to the first reflector is formed on the back side of the substrate. A first electrode is disposed in the third groove and electrically connected to the first reflector.

7. The method for fabricating a semiconductor light-emitting device according to claim 1, characterized in that, The second reflector is a Bragg reflector, and the fabrication method further includes the following steps before forming the second reflector: An ITO layer is formed on the side of the light-emitting structure away from the first reflector, and a second reflector is formed on the surface of the ITO layer facing away from the first reflector.

8. The method for fabricating a semiconductor light-emitting device according to claim 3, characterized in that, Multiple light-emitting structures share the second electrode.

9. The method for fabricating a semiconductor light-emitting device according to claim 7, characterized in that, The surface of each light-emitting structure facing away from the first reflector is flush with the surface of the mask layer facing away from the substrate, and multiple light-emitting structures share a single ITO layer.

10. The method for fabricating a semiconductor light-emitting device according to claim 1, characterized in that, The light-emitting structure includes an oxide layer, the oxide layer including a low-resistivity region and a high-resistivity region surrounding the low-resistivity region.

11. A semiconductor light-emitting device, characterized in that, The semiconductor light-emitting device is prepared by the method for preparing a semiconductor light-emitting device according to any one of claims 1-10.

Images