Detector pixel structure and electronic detector
By designing doped and metal protective rings in the detector pixel structure, the problem of electron beam offset caused by uneven metal electrode coverage was solved, achieving higher imaging accuracy and detection performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI IND U TECH RES INST
- Filing Date
- 2022-04-18
- Publication Date
- 2026-07-21
AI Technical Summary
In existing technologies, the metal electrode coverage of electron detectors is poor, resulting in the deposited metal coating layer not being thick enough to effectively dissipate charge, causing the electron beam propagation direction to deviate and affecting imaging accuracy.
A doped protective ring structure was designed, and a metal protective ring was placed near the central hole of the detector to establish a circuit path, guide the charge accumulated on the insulating layer, prevent the electron beam propagation direction from deviating, and reduce leakage current.
It effectively avoids image distortion, reduces leakage current, increases breakdown voltage, and improves the imaging quality and performance of the detector.
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Figure CN116960134B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of detector technology, and in particular to a detector pixel structure and an electronic detector. Background Technology
[0002] Electron detectors, as imaging devices, are widely used in characterization tests based on electron detection and are a core component, such as in scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning transmission electron microscopy (STEM). Electron detectors have a large effective detection area (~50 mm²). 2 The characteristics mentioned above are as follows. To ensure imaging quality, it is generally required that the detector leakage current be low and that the electron beam not deviate from its path when passing through the detector's central aperture, as this would lead to a decrease in imaging quality. For example... Figure 1 The diagram shows a typical cross-sectional structure of an electronic detector, including an electron channel electrode 32 deposited on the inner wall of the detector's central hole 31 and an insulating layer 33 adjacent to the detector's central hole 31. Metal electrodes are typically formed by filling metal into vias created through-holes using processes such as thermal evaporation or PVD sputtering. However, due to limitations in current technology, these processes often result in uneven metal deposition in deep holes, particularly poor coverage of the electrodes on the bottom sidewalls of the vias. For example, in the middle of the via (approximately 220 μm from the top), the deposited metal provides good coverage of the sidewalls; however, at the bottom of the via, the deposited metal layer cannot form a sufficiently thick, continuous film to conduct charge, and charge accumulates on the insulating layer, leading to… Figure 1 The area indicated by the dashed line forms a local electric field, causing a shift in the direction of electron beam propagation, resulting in image distortion and affecting imaging accuracy. Summary of the Invention
[0003] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a detector pixel structure and an electronic detector to solve the problems in the prior art where the poor coverage of the metal electrodes in the electronic detector results in the deposited metal cover layer not being able to form a sufficiently thick continuous film, thus failing to conduct charge, and accumulating charge on the insulating layer, causing a local electric field to form in the insulating layer region near the detector's central hole, causing the electron beam propagation direction to deviate, resulting in image distortion and affecting imaging accuracy.
[0004] To achieve the above and other related objectives, the present invention provides a detector pixel structure, comprising a semiconductor substrate, a first conductivity type heavily doped layer, a second conductivity type heavily doped layer, an insulating layer, an upper electrode, a lower electrode, an electron channel hole electrode, a metal guard ring, and a doped ring. The first conductivity type is P-type and the second conductivity type is N-type, or the first conductivity type is N-type and the second conductivity type is P-type. The semiconductor substrate has opposing first and second surfaces. The first conductivity type heavily doped layer and the second conductivity type heavily doped layer are located within the semiconductor substrate and are respectively exposed on the first and second surfaces of the semiconductor substrate. The doped ring is located within the semiconductor substrate and is located on the... The first conductivity type heavily doped layer is located outside the semiconductor substrate and exposed on the first surface of the semiconductor substrate. The surface of the first conductivity type heavily doped layer defines a detection region and a non-detection region located outside the detection region. The insulating layer extends from the surface of the non-detection region to the surface of the semiconductor substrate. The upper electrode extends from the surface of the non-detection region to the surface of the insulating layer. The lower electrode is located on the surface of the second conductivity type heavily doped layer opposite to the semiconductor substrate. The electron channel hole electrode is located on the sidewall of the semiconductor substrate, with one end electrically connected to the lower electrode and the other end extending to the side of the insulating layer. The metal guard ring is located on the surface of the semiconductor substrate and outside the upper electrode.
[0005] In an alternative embodiment, the detector pixel structure further includes a doped ring lead-out electrode that extends from the surface of the doped ring to the surface of the insulating layer and is located between the upper electrode and the metal guard ring, and is spaced apart from both the upper electrode and the metal guard ring.
[0006] In another alternative, the doped ring is a first conductivity type doped ring or a second conductivity type doped ring, the doped ring is spaced apart from the first conductivity type heavily doped layer, and the lead-out electrode of the doped ring covers the doped ring.
[0007] In another alternative, the doped ring is a first conductivity type doped ring or a second conductivity type doped ring, the doped ring is spaced apart from the first conductivity type heavily doped layer, the lead-out electrode of the doped ring is located on a portion of the surface of the doped ring, and the metal guard ring extends inward to a portion of the surface of the doped ring.
[0008] In another alternative embodiment, the doped ring includes a first conductivity type doped ring and a second conductivity type doped ring spaced apart. The first conductivity type doped ring is spaced apart outside the first conductivity type heavily doped layer. The doped ring lead-out electrode and the metal guard ring both extend to a portion of the surface of the first conductivity type doped ring. The second conductivity type doped ring is located outside the first conductivity type doped ring and is covered by the insulating layer.
[0009] In another alternative embodiment, the doped ring includes a first conductivity type doped ring and a second conductivity type doped ring spaced apart. The first conductivity type doped ring is adjacent to the first conductivity type heavily doped layer and is covered by the insulating layer. The second conductivity type doped ring is located outside the first conductivity type doped ring. The doped ring lead-out electrode and the metal guard ring both extend to a portion of the surface of the second conductivity type doped ring.
[0010] Optionally, the planar topography of the detector pixel structure includes any one of rectangle, sector, fan-shaped, ring, and circle.
[0011] The present invention also provides an electronic detector, the electronic detector comprising a detector central hole and a plurality of detector pixel structures as described in any of the above embodiments, the plurality of detector pixel structures being centrally symmetrically distributed with the detector central hole as the center, and the electronic channel hole electrodes of the detector pixel structures being adjacent to the detector central hole.
[0012] Optionally, adjacent detector pixel structures are spaced apart from each other.
[0013] In another alternative, adjacent detector pixel structures are adjacent to each other.
[0014] Optionally, the detector pixel structure has 4 or 5 pixels.
[0015] As described above, the detector pixel structure and electronic detector of the present invention have the following beneficial effects: The detector pixel structure and electronic detector of the present invention are designed with a doped protective ring structure around the detection area, and a metal protective ring is set near the central hole of the detector, and a circuit path is established with the outside. This can effectively guide the charge that was originally accumulated on the insulating layer, thereby effectively avoiding image distortion caused by the deviation of the electron beam propagation direction, and can reduce the leakage current of the detector and increase the breakdown voltage, thereby improving the detection performance. Attached Figure Description
[0016] Figure 1 The diagram shown is a cross-sectional structural schematic of an electronic detector in the prior art.
[0017] Figure 2 The diagram shown is an exemplary cross-sectional view of the detector pixel structure provided in Embodiment 1 of the present invention.
[0018] Figure 3 The diagram shown is an exemplary cross-sectional view of the detector pixel structure provided in Embodiment 2 of the present invention.
[0019] Figure 4 The diagram shown is an exemplary cross-sectional view of the detector pixel structure provided in Embodiment 3 of the present invention.
[0020] Figure 5 The diagram shown is an exemplary cross-sectional view of the detector pixel structure provided in Embodiment 4 of the present invention.
[0021] Figure 6 The diagram shown is an exemplary top view of an electronic detector fabricated according to the detector pixel structure of Example 1.
[0022] Figure 7 for Figure 6 A schematic diagram of the cross-sectional structure along line AA'.
[0023] Figure 8 The diagram shown is an exemplary top view of an electronic detector fabricated according to the detector pixel structure of Example 2.
[0024] Figure 9 for Figure 8 A schematic diagram of the cross-sectional structure along line AA'.
[0025] Figure 10 The diagram shown is an exemplary top view of an electronic detector fabricated according to the detector pixel structure of Example 3.
[0026] Figure 11 for Figure 10 A schematic diagram of the cross-sectional structure along line AA'.
[0027] Figure 12 The diagram shown is an exemplary top view of an electronic detector fabricated according to the detector pixel structure of Example 4.
[0028] Figure 13 for Figure 12 A schematic diagram of the cross-sectional structure along line AA'.
[0029] Figure 14 and 15 The diagram shows top views of the electronic detector provided by the present invention in different examples.
[0030] Component designation explanation
[0031] 100 detector pixel structure
[0032] 11 Semiconductor substrate
[0033] 12 Heavy doped layers of the first conductivity type
[0034] 13. Heavily doped layer of the second conductivity type
[0035] 14 Insulation layer
[0036] 15 Upper electrode
[0037] 16 Lower Electrode
[0038] 17 Electron Channel Hole Electrode
[0039] 18 Metal protective ring
[0040] 19 First conductivity type doped ring
[0041] 20 Second conductivity type doped ring
[0042] 21 Doped ring lead-out electrode
[0043] 22 pads
[0044] 23. Detector center hole Detailed Implementation
[0045] The following specific examples illustrate the embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. For ease of explanation, when detailing the embodiments of the present invention, the cross-sectional views showing the device structure are partially enlarged, not according to the general scale, and the schematic diagrams are merely examples and should not limit the scope of protection of the present invention. Furthermore, in actual manufacturing, the three-dimensional spatial dimensions of length, width, and depth should be included.
[0046] For ease of description, spatial relation terms such as “below,” “under,” “lower than,” “below,” “above,” and “upper” may be used herein to describe the relationship between one element or feature shown in the accompanying drawings and other elements or features. It will be understood that these spatial relation terms are intended to include directions other than those depicted in the drawings for devices in use or operation. Furthermore, when a layer is referred to as being “between” two layers, it may be the only layer between the two layers, or there may be one or more layers in between.
[0047] In the context of this application, the structure described above the first feature may include embodiments in which the first and second features are formed in direct contact, or embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
[0048] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show components related to the present invention and are not drawn according to the actual number, shape, and size of the components in the actual implementation. In the actual implementation, the form, quantity, and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex. To keep the illustrations as concise as possible, not all structures are shown in the figures.
[0049] Please see Figures 2 to 12 .
[0050] Example 1
[0051] like Figure 2 As shown, the present invention provides a detector pixel structure 100, including a semiconductor substrate 11, a first conductivity type heavily doped layer 12, a second conductivity type heavily doped layer 13, an insulating layer 14, an upper electrode 15, a lower electrode 16, an electron channel hole electrode 17, a metal guard ring 18, and a doped ring. The first conductivity type is P-type and the second conductivity type is N-type, or the first conductivity type is N-type and the second conductivity type is P-type. The accompanying drawings will primarily illustrate the first conductivity type as P-type and the second conductivity type as N-type. The semiconductor substrate 11 has opposing first and second surfaces, respectively corresponding to… Figure 2The upper and lower surfaces are shown in the diagram; the first conductivity type heavily doped layer 12 and the second conductivity type heavily doped layer 13 are located within the semiconductor substrate 11 and exposed on the first and second surfaces of the semiconductor substrate 11, respectively, and are formed by different types of doping; the doping ring is located within the semiconductor substrate 11 and outside the first conductivity type heavily doped layer 12 (or wrapped around the outside of the first conductivity type heavily doped layer 12), and exposed on the first surface of the semiconductor substrate 11, and is also formed by doping; the surface of the first conductivity type heavily doped layer 12 defines a detection region and a non-detection region located outside the detector region, and the insulating layer 14 extends from the surface of the non-detection region to the surface of the semiconductor substrate 11. In this embodiment, the detection region is located throughout the detector pixel structure 10. In the middle region of 0, all other structures on the first surface are arranged around the detection region, so the upper electrode 15 and the insulating layer 14 are essentially ring structures; the upper electrode 15 extends from the surface of the non-detection region to the surface of the insulating layer 14; the lower electrode 16 is located on the surface of the second conductivity type heavily doped layer 13 away from the semiconductor substrate 11; the electron channel hole electrode 17 is located on the sidewall of the semiconductor substrate 11, with one end electrically connected to the lower electrode 16 and the other end extending to the side of the insulating layer 14 and adjacent to the insulating layer 14; the metal protective ring 18 is located on the surface of the semiconductor substrate 11 and outside the upper electrode 15. The metal protective ring 18 is close to the electron channel hole electrode 17 but not connected to it. The metal protective ring 18 can establish a circuit path with the outside to achieve grounding, or it can be ungrounded. This invention designs a doped protective ring structure around the detection area and sets a metal protective ring 18 near the center hole of the detector. The metal protective ring 18 can establish a circuit path with the outside to achieve grounding, which can effectively guide the charge originally accumulated on the insulating layer 14. The metal protective ring 18 can also be ungrounded (i.e. floating) to play the role of uniform electric field, thereby effectively avoiding image distortion caused by the deviation of the electron beam propagation direction, and reducing the leakage current of the detector and increasing the breakdown voltage, thereby improving the detection performance.
[0052] The semiconductor substrate 11 is typically an intrinsic semiconductor substrate, preferably a silicon substrate, germanium substrate, germanium-silicon substrate, or gallium arsenide substrate; the upper electrode 15, lower electrode 16, and electron channel hole electrode 17 may be made of the same or different materials. For example, the upper electrode 15 is an aluminum electrode, while the lower electrode 16 and electron channel hole electrode 17 are preferably made of the same material, such as gold electrodes. The insulating layer 14 is preferably, but not limited to, a silicon oxide layer. The thickness of each structural layer is not strictly limited. The concentration of the doping ring is usually not higher than the doping concentration of the first conductivity type heavily doped layer 12 and the second conductivity type heavily doped layer 13.
[0053] In one example, the detector pixel structure 100 further includes a doped ring lead-out electrode 21, which extends from the surface of the doped ring to the surface of the insulating layer 14 and is located between the upper electrode 15 and the metal guard ring 18, and is spaced apart from both the upper electrode 15 and the metal guard ring 18. The doped ring can be grounded through the doped ring lead-out electrode 21, which helps to further reduce the detector's leakage current and improve the breakdown voltage. Of course, in other examples, the doped ring may not be grounded, which can still reduce the detector's leakage current and improve the breakdown voltage.
[0054] The planar topography (i.e., top view) of the detector pixel structure 100 can be determined as needed, and can be selected from any one of rectangle (e.g., square), sector, fan-shaped, ring, and circle. When used in an electronic detector, the same electronic detector typically includes multiple detector pixel structures 100, and the planar topography of these multiple detector pixel structures 100 can be the same or different, which will be further described in the following content.
[0055] In this embodiment, the doped ring is a single first conductivity type doped ring 19 or a second conductivity type doped ring 20. That is, the doped ring can be of the first conductivity type or the second conductivity type. The doped ring is spaced apart from the first conductivity type heavily doped layer 12. The doped ring lead-out electrode 21 covers the doped ring and can extend to both sides to the surface of the insulating layer 14. The metal guard ring 18 is located outside the doped ring lead-out electrode 21. It is adjacent to but not connected to the electron channel hole electrode 17. The upper electrode 15, the doped ring lead-out electrode 21, the metal guard ring 18 and the electron channel hole electrode 17 are isolated from each other by the insulating layer 14.
[0056] Example 2
[0057] like Figure 3 As shown, this embodiment provides another detector pixel structure 100. The main difference between this embodiment and Embodiment 1 is that in this embodiment, the doped ring is a single first conductivity type doped ring 19 or a second conductivity type doped ring 20. That is, the doped ring can be of the first conductivity type or the second conductivity type. The doped ring is spaced apart from the first conductivity type heavily doped layer 12. The doped ring lead-out electrode 21 is located on a portion of the surface of the doped ring, and the metal guard ring 18 extends inward to a portion of the surface of the doped ring. Similarly, the metal guard ring 18 is located outside the doped ring lead-out electrode 21. The upper electrode 15, the doped ring lead-out electrode 21, the metal guard ring 18, and the electron channel hole electrode 17 are isolated from each other by an insulating layer 14. The other structures of the detector pixel structure 100 in this embodiment are the same as those in Embodiment 1. Please refer to the description of Embodiment 1 for details, which will not be repeated for the sake of brevity.
[0058] Example 3
[0059] like Figure 4 As shown, this embodiment provides another detector pixel structure 100. The detector pixel structure 100 provided in this embodiment includes doped rings comprising a first conductivity type doped ring 19 and a second conductivity type doped ring 20 spaced apart. The first conductivity type doped ring 19 is spaced apart outside the first conductivity type heavily doped layer 12. The doped ring lead-out electrode 21 and the metal guard ring 18 both extend to a portion of the surface of the first conductivity type doped ring 19. The second conductivity type doped ring 20 is located outside the first conductivity type doped ring 19 and is covered by the insulating layer 14. Of course, the conductivity types of the first conductivity type doped ring 19 and the second conductivity type doped ring 20 can be interchanged, or both can be electrically led out simultaneously. Other structures of the detector pixel structure 100 in this embodiment are the same as in Embodiment 1; please refer to the description of Embodiment 1 for details, which will not be repeated for the sake of brevity.
[0060] Example 4
[0061] like Figure 5 As shown, this embodiment provides another detector pixel structure 100. The detector pixel structure 100 provided in this embodiment includes a first conductivity type doped ring 19 and a second conductivity type doped ring 20 spaced apart. The first conductivity type doped ring 19 is adjacent to the first conductivity type heavily doped layer 12 and is covered by the insulating layer 14. The second conductivity type doped ring 20 is located outside the first conductivity type doped ring 19. The doped ring lead-out electrode 21 and the metal guard ring 18 both extend to a portion of the surface of the second conductivity type doped ring 20. Other structures of the detector pixel structure 100 in this embodiment are the same as in Embodiment 1; please refer to the description of Embodiment 1 for details, which will not be repeated for the sake of brevity.
[0062] Of course, the specific structure of the detector pixel structure 100 provided by the present invention is not limited to the above types. Without affecting the detection function, the setting (including shape, number, etc.) of the metal guard ring 18 and the doped ring can be adjusted more flexibly. These will not be elaborated one by one, but the aforementioned structures are easier to manufacture.
[0063] like Figures 6 to 15As shown, the present invention also provides an electronic detector, which includes a detector central hole 23 and a plurality of detector pixel structures 100 as described in any of the above embodiments (each detector pixel structure serves as a different detection channel). Therefore, the foregoing description of the detector pixel structure can be quoted in its entirety here. The plurality of detector pixel structures 100 are centrally symmetrically distributed around the detector central hole 23. The electronic channel hole electrode 17 of the detector pixel structure 100 is adjacent to the detector central hole 23, while the metal protective ring surrounds the top of the detector central hole circumferentially. Specifically, the electronic detector pixel structure can be four, five or more, and each detector pixel structure 100 can be... Figure 6 , 8 10 and 12 ( Figure 6 , 8 10 and 12 are electronic detectors fabricated from the detector pixel structures of Examples 1, 2, 3, and 4, respectively. Their cross-sectional structural schematic diagrams along the AA' line direction are shown below. Figure 7 , 9 The square shown in Figures 11 and 13 can also be... Figure 14 The sector shown can also be circular or annular, or it can be like... Figure 15 The diagram shows detector pixel structures in various shapes, including circular and fan-shaped, with signals from different channels led out from different pads 22. It should be noted that adjacent detector pixel structures can be spaced apart or adjacent to each other, for example... Figure 6 , 8 In the electron detectors shown in Figures 10 and 12, the dashed lines represent the locations of doped rings, and the solid lines below the dashed lines correspond to the locations of metal guard rings. The doped rings and metal guard rings between adjacent channels within the boxes in the figures can be spaced apart or connected together.
[0064] by Figure 7 For example, it is Figure 6 The diagram shows a cross-sectional view of the electron detector along line AA' (taking the detector pixel structure shown in Embodiment 2 as an example). It can be seen that in adjacent detector pixel structures, the electron channel electrode 17 is located on the side of the detector center hole 23, guiding the detector electrons to be incident on the sample surface along a predetermined path. The metal guard ring and doped ring further ensure that the electron beam propagation direction does not deviate, avoiding image distortion, reducing detector leakage current, and increasing breakdown voltage, thereby effectively improving the detector's detection performance.
[0065] In summary, this invention provides a detector pixel structure and an electronic detector. The detector pixel structure includes a semiconductor substrate, a first conductivity type heavily doped layer, a second conductivity type heavily doped layer, an insulating layer, an upper electrode, a lower electrode, an electron channel hole electrode, a metal guard ring, and a doped ring. The first conductivity type is P-type and the second conductivity type is N-type, or the first conductivity type is N-type and the second conductivity type is P-type. The semiconductor substrate has opposing first and second surfaces. The first conductivity type heavily doped layer and the second conductivity type heavily doped layer are located within the semiconductor substrate and are exposed on the first and second surfaces of the semiconductor substrate, respectively. The doped ring is located within the semiconductor substrate and is located outside the first conductivity type heavily doped layer. The detector pixel structure and electronic detector of the present invention are designed with a doped protective ring structure around the detection area and a non-detection area located outside the detector area. The insulating layer extends from the surface of the non-detection area to the surface of the semiconductor substrate, and the upper electrode extends from the surface of the non-detection area to the surface of the insulating layer. The lower electrode is located on the surface of the second conductivity type heavily doped layer away from the semiconductor substrate. The electron channel hole electrode is located on the sidewall of the semiconductor substrate, with one end electrically connected to the lower electrode and the other end extending to the side of the insulating layer. The metal protective ring is located on the surface of the semiconductor substrate and outside the upper electrode. The detector pixel structure and electronic detector of the present invention have a doped protective ring structure around the detection area and a metal protective ring is set near the central hole of the detector. The metal protective ring is connected to the outside circuit, which can effectively guide the charge originally accumulated on the insulating layer. This can effectively avoid image distortion caused by the deviation of the electron beam propagation direction, reduce the leakage current of the detector, and increase the breakdown voltage, thereby improving the detection performance. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has high industrial application value.
[0066] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.
Claims
1. A detector pixel structure, characterized in that, The device includes a semiconductor substrate, a heavily doped layer of a first conductivity type, a heavily doped layer of a second conductivity type, an insulating layer, an upper electrode, a lower electrode, an electron channel hole electrode, a metal guard ring, and a doped ring. The first conductivity type is P-type and the second conductivity type is N-type, or the first conductivity type is N-type and the second conductivity type is P-type. The semiconductor substrate has opposing first and second surfaces. The first and second heavily doped layers are located within the semiconductor substrate and are exposed on the first and second surfaces of the semiconductor substrate, respectively. The doped ring is located within the semiconductor substrate and outside the first heavily doped layer, and is exposed on the first surface of the semiconductor substrate. The surface of the first conductivity type heavily doped layer is defined with a probe region and a non-probe region located outside the probe region. The insulating layer extends from the surface of the non-probe region to the surface of the semiconductor substrate. The upper electrode extends from the surface of the non-probe region to the surface of the insulating layer. The lower electrode is located on the surface of the second conductivity type heavily doped layer away from the semiconductor substrate. The electron channel hole electrode is located on the sidewall of the semiconductor substrate, with one end electrically connected to the lower electrode and the other end extending to the side of the insulating layer. The metal protective ring is located on the surface of the semiconductor substrate and is located outside the upper electrode.
2. The detector pixel structure according to claim 1, characterized in that, The detector pixel structure also includes a doped ring lead-out electrode, which extends from the surface of the doped ring to the surface of the insulating layer and is located between the upper electrode and the metal guard ring, and is spaced apart from both the upper electrode and the metal guard ring.
3. The detector pixel structure according to claim 2, characterized in that, The doped ring is either a first conductivity type doped ring or a second conductivity type doped ring, and the doped ring is spaced apart from the first conductivity type heavily doped layer, with the lead-out electrode of the doped ring covering the doped ring.
4. The detector pixel structure according to claim 2, characterized in that, The doped ring is either a first conductivity type doped ring or a second conductivity type doped ring. The doped ring is spaced apart from the first conductivity type heavily doped layer. The lead-out electrode of the doped ring is located on a portion of the surface of the doped ring. The metal guard ring extends inward to a portion of the surface of the doped ring.
5. The detector pixel structure according to claim 2, characterized in that, The doping ring includes a first conductivity type doping ring and a second conductivity type doping ring spaced apart. The first conductivity type doping ring is spaced apart on the outside of the first conductivity type heavily doped layer. The doping ring lead-out electrode and the metal guard ring both extend to a portion of the surface of the first conductivity type doping ring. The second conductivity type doping ring is located on the outside of the first conductivity type doping ring and is covered by the insulating layer.
6. The detector pixel structure according to claim 2, characterized in that, The doped ring includes a first conductivity type doped ring and a second conductivity type doped ring spaced apart. The first conductivity type doped ring is adjacent to the first conductivity type heavily doped layer and is covered by the insulating layer. The second conductivity type doped ring is located outside the first conductivity type doped ring. The doped ring lead-out electrode and the metal guard ring both extend to a portion of the surface of the second conductivity type doped ring.
7. The detector pixel structure according to any one of claims 1-6, characterized in that, The planar shape of the detector pixel structure includes any one of the following: rectangular, sector, fan-shaped, annular, and circular.
8. An electronic detector, characterized in that, The electronic detector includes a detector center hole and a plurality of detector pixel structures as described in any one of claims 1-7, wherein the plurality of detector pixel structures are centrally symmetrically distributed with the detector center hole as the center, and the electronic channel hole electrodes of the detector pixel structures are adjacent to the detector center hole.
9. The electronic detector according to claim 8, characterized in that, Adjacent detector pixel structures are spaced apart or adjacent to each other.
10. The electronic detector according to claim 8, characterized in that, The detector has a pixel structure of 4 or 5.