Deposition mask

Abstract

The present application relates to deposition masks. The deposition mask can include a patterned region provided with a pattern portion and a plurality of bonding regions provided near opposite ends of the patterned region in a first direction. The pattern portion can include a first pattern portion in which first pattern holes are defined, and a plurality of second pattern portions in which second pattern holes are defined and located between the first pattern portion and the opposite ends of the bonding regions in the first direction. A minimum distance between adjacent ones of the second pattern holes can be greater than a minimum distance between adjacent ones of the first pattern holes.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2018-0067675, filed with the Korean Intellectual Property Office on June 12, 2018, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure relates to deposition masks and mask assemblies including deposition masks, and more particularly to deposition masks configured to improve accuracy and uniformity in deposition processes and mask assemblies including the deposition masks. Background Technology

[0004] Organic light-emitting display devices (OLEDs), as a type of self-emissive display device, possess technical advantages such as wide viewing angles, good contrast, and fast response times, thus standing out as a next-generation display device. OLEDs include two opposing electrodes and an intermediate layer (e.g., at least one light-emitting layer) interposed between the electrodes. Various methods, including deposition methods, can be used to form the intermediate layer. In the case of deposition methods, a deposition mask (e.g., a fine metal mask (FMM)) is positioned in close contact with the substrate. Deposition material is supplied onto the substrate through the deposition mask to form a thin deposited film with a desired pattern. Here, the deposition mask is configured to have openings whose shape is identical to the shape of the pattern of the thin deposited film to be formed on the substrate. Summary of the Invention

[0005] Embodiments of the present invention provide a deposition mask configured to improve accuracy and uniformity in a deposition process.

[0006] According to an embodiment of the present invention, a deposition mask may include a patterned region having a patterned portion and a plurality of bonding regions disposed near opposite ends in a first direction of the patterned region. The patterned portion may include: a first patterned portion defining a first patterned hole; and a plurality of second patterned portions, each defining a second patterned hole and located between opposite ends of the first patterned portion and the bonding regions in the first direction. A second distance, which is the minimum distance between adjacent second patterned holes, may be greater than a first distance, which is the minimum distance between adjacent first patterned holes.

[0007] In one embodiment, the size of each of the first pattern holes may be substantially equal to the size of each of the second pattern holes.

[0008] In an implementation, the second distance may be greater than or equal to about 20 μm.

[0009] In an embodiment, each of the second pattern portions can include: a first portion, the first portion being disposed adjacent to the bonding region of the plurality of bonding regions, and the second pattern hole being defined in the first portion; and a second portion, the second portion being disposed between the first portion and the first pattern portion, and the first pattern hole being defined in the second portion.

[0010] In an embodiment, in the first portion, the second pattern hole can be defined to form at least two rows.

[0011] In an embodiment, each of the second pattern portions can further include a third portion, the third portion being disposed between the first portion and the bonding region, and a third pattern hole being defined in the third portion. A third distance, which is a minimum distance between adjacent ones of the third pattern holes, can be greater than the second distance.

[0012] In an embodiment, the first pattern portion can include: a plurality of deposition portions, the plurality of deposition portions being spaced apart from each other in the first direction, and the first pattern hole being defined in the plurality of deposition portions; and at least one barrier portion, the at least one barrier portion being disposed between the deposition portions.

[0013] In an embodiment, an open ratio of the barrier portion can be less than an open ratio of each of the deposition portions.

[0014] In an embodiment, the open ratio of the barrier portion can be 0.

[0015] In an embodiment, the barrier portion can be disposed to have a plurality of fourth pattern holes defined therein. A size of each of the fourth pattern holes can be substantially equal to a size of each of the first pattern holes.

[0016] In an embodiment, a minimum distance between adjacent ones of the fourth pattern holes can be greater than or equal to the second distance.

[0017] In an embodiment, the barrier portion can be disposed to have a plurality of fourth pattern holes defined therein. A size of each of the fourth pattern holes can be less than a size of each of the first pattern holes.

[0018] In an embodiment, a minimum distance between adjacent ones of the fourth pattern holes can be substantially equal to the first distance.

[0019] In an embodiment, an open ratio of the barrier portion can be substantially equal to an open ratio of each of the deposition portions.

[0020] In an embodiment, a width of the barrier portion in the first direction can be different from a width of the second pattern portion in the first direction.

[0021] In an embodiment, a maximum distance between the first pattern holes can be substantially equal to the second distance.

[0022] In embodiments, the deposition mask can further include cutouts disposed adjacent opposite ends of the plurality of bonding regions in the first direction. Each of the cutouts can include a dummy pattern portion having dummy pattern holes defined therein, and the dummy pattern holes can be defined to have substantially the same arrangement as the arrangement of the first pattern holes.

[0023] In embodiments, each of the cutouts can be disposed to have a clamping notch recessed inwardly from an outer side of the cutout in the first direction.

[0024] According to embodiments of the inventive concept, a mask assembly can include a frame set and a plurality of deposition masks disposed on the frame set, each of the plurality of deposition masks extending in a first direction. The frame set can include a support frame and a plurality of support bars extending in a second direction crossing the first direction and arranged in the first direction. Opposite ends of each of the plurality of support bars in the second direction can be coupled to the support frame. Each of the deposition masks can include a plurality of bonding regions spaced apart from each other in the first direction and fixed to the support frame, and a patterned region disposed between the bonding regions and provided with pattern portions. The pattern portions can include a first pattern portion disposed to overlap a center of the patterned region, and a plurality of second pattern portions disposed between the first pattern portion and opposite ends of the bonding regions in the first direction. A plurality of second pattern holes can be defined in at least one region of each of the plurality of second pattern portions. A minimum distance between adjacent ones of the second pattern holes can be greater than a minimum distance between adjacent ones of the first pattern holes.

[0025] In embodiments, a size of each of the first pattern holes can be substantially equal to a size of each of the second pattern holes.

[0026] In embodiments, the support bars include at least one first support bar arranged in the first direction and overlapping a portion of the first pattern portion, and a second support bar that is an outermost support bar of the support bars in the first direction and overlaps the second pattern portions of each of the deposition masks.

[0027] In embodiments, the first pattern portion includes a plurality of deposition portions spaced apart from each other in the first direction and having the first pattern holes defined therein, and at least one blocking portion disposed between the deposition portions and overlapping the first support bar.

[0028] In embodiments, a width of each of the second support bars in the first direction can be different from a width of each of the first support bars in the first direction.

[0029] In embodiments, the opening ratio of the bonding region can be 0.

[0030] In embodiments, each of the inner side portions of the support frame opposite to each other in the second direction can be provided to have a plurality of coupling receiving ports arranged in the first direction. The opposite ends of the support bar can be provided in the plurality of coupling receiving ports.

[0031] In embodiments, the minimum distance between adjacent ones of the second pattern holes in the second pattern portion can be greater than or equal to about 20 pm.

[0032] In embodiments, in the second pattern portion, the second pattern holes can form at least two rows.

[0033] According to embodiments of inventive concepts, a deposition mask can include a patterned region and a plurality of bonding regions, wherein a plurality of pattern holes are defined in the patterned region, the plurality of bonding regions are disposed adjacent to opposite ends of the patterned region in a first direction. A minimum distance between adjacent ones of the pattern holes defined in a portion of the patterned region adjacent to the bonding regions can be greater than a minimum distance between adjacent ones of the pattern holes defined in another portion of the patterned region other than the portion adjacent to the bonding regions.

[0034] According to embodiments of inventive concepts, a deposition mask can include a patterned region having a pattern portion and a plurality of bonding regions disposed adjacent to opposite ends of the patterned region in a first direction. The pattern portion can include a first pattern portion in which pattern holes are defined in a first arrangement and a plurality of second pattern portions in which pattern holes are defined in a second arrangement. A minimum distance between the pattern holes in the second arrangement can be greater than a minimum distance between the pattern holes in the first arrangement.

[0035] In embodiments, the minimum distance between the pattern holes in the second arrangement can be greater than or equal to about 20 pm.

[0036] In embodiments, a diameter of each of the pattern holes in the first and second arrangements can range from about 17 pm to about 22 pm.

[0037] In embodiments, the pattern holes in the second arrangement can form at least two rows. BRIEF DESCRIPTION OF DRAWINGS

[0038] Exemplary embodiments will be more fully understood from the following detailed description, taken in conjunction with the accompanying drawings, in which:

[0039] Figure 1is a perspective view showing a mask assembly according to an embodiment of the inventive concept.

[0040] Figure 2 is a perspective view showing a mask assembly according to an embodiment of the inventive concept. Figure 1 is a perspective view showing a frame set shown in

[0041] Figure 3 is a perspective view showing a mask assembly in which a cut-out is cut.

[0042] Figure 4 is a cross-sectional view schematically showing a deposition system according to an embodiment of the inventive concept.

[0043] Figure 5 is a plan view of a deposition mask.

[0044] Figure 6 is a perspective view showing a portion Figure 5 of the mask assembly shown in

[0045] Figure 7 is a perspective view showing a first pattern portion shown in Figure 6

[0046] Figure 8 is a perspective view showing a first portion shown in Figure 6

[0047] Figure 9 is a perspective view showing a second pattern portion according to an embodiment of the inventive concept.

[0048] Figure 10 is a perspective view showing a second pattern portion according to an embodiment of the inventive concept.

[0049] Figure 11 is a perspective view showing a third portion shown in Figure 10

[0050] Figure 12 is a perspective view showing a blocking portion according to an embodiment of the inventive concept.

[0051] Figure 13 is a perspective view showing a blocking portion according to an embodiment of the inventive concept.

[0052] Figure 14 is a perspective view showing a blocking portion according to an embodiment of the inventive concept.

[0053] ​​​It should be noted that the attached drawings are intended to show, by way of illustration, certain exemplary embodiments and are not intended to be actual views of the embodiments described herein. These drawings are not intended to limit or otherwise define the scope of the exemplary embodiments in any way. For example, relative thicknesses and positions of molecular, layers, regions, and / or structural elements can be exaggerated or reduced in the attached figures for clarity. The use of similar or same reference numerals in various drawings indicates similar or same elements or features. DETAILED DESCRIPTION

[0054] Exemplary embodiments of the inventive concept will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the inventive concept are shown. The inventive concept may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided by way of example so that this disclosure will be thorough and complete, and will fully convey the inventive concept to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Like reference numerals in the drawings denote like elements, and thus their description will be omitted.

[0055] It should be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements can be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present. Like reference numerals in the drawings denote like elements throughout the specification. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Other words used to describe the relationship between elements or layers should be interpreted in a like fashion (e.g., "between" versus "directly between," "adjacent" versus "directly adjacent," "on" versus "directly on," etc.).

[0056] It should be understood that, although the terms "first," "second," etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the exemplary embodiments.

[0057] For ease of description, spatially relative terms - such as "beneath", "below", "lower", "above", "upper" - can be used herein for describing an element's or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0058] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" "comprising", "includes" and / or "including" when used herein, specify the presence of stated features, integers, steps, operations, elements, and / or components but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0059] In this document, the terms "example" and "exemplary" are used as adjectives to indicate a particular implementation or an example. Unless otherwise stated, no inference should be drawn from the use of these terms that a particular implementation is or is not a recommendation or endorsement of that implementation.

[0060] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which example embodiments of the inventive concept belong. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0061] Figure 1 is a perspective view showing a mask assembly 100 according to an embodiment of the inventive concept. Figure 2 is a perspective view showing a mask assembly 100 according to an embodiment of the inventive concept. Figure 1 is a perspective view showing a frame assembly 10 shown in FIG.Figure 3 is a perspective view showing the mask assembly 100A in which the cutting portion 22 is cut.

[0062] Referring to Figures 1 to 3 , the mask assembly 100 according to the embodiments of the inventive concept can be used in a process of depositing an organic material onto a target substrate SUB to be described with reference to Figure 4 . For example, the mask assembly 100 can be used in an organic material deposition process, which is performed to manufacture an organic light emitting device (not shown).

[0063] In embodiments, the mask assembly 100 can include a frame set 10 and a plurality of deposition masks 20.

[0064] The frame set 10 can include a support frame 11 and a plurality of support bars 12 and 13. The support frame 11 can have a rectangular shape or a quadrangular shape. The support frame 11 can have a frame opening FOP in a central region thereof.

[0065] As shown in Figures 1 to 3 , the support frame 11 can have a rectangular shape in which short sides thereof extend in a first direction DR1 and long sides thereof extend in a second direction DR2 crossing the first direction DR1 when viewed in a plan view. However, the inventive concept is not limited to the specific shape of the support frame 11. The length of the support frame 11 in the first direction DR1 or the second direction DR2 can vary depending on the size or the number of the deposition masks 20 to be described in greater detail below.

[0066] Each of the support bars 12 and 13 can be shaped like a bar. For example, each of the support bars 12 and 13 can have an elongated shape in the second direction DR2. The support bars 12 and 13 can be arranged in the first direction DR1. The support bars 12 and 13 can be placed on an inner region of the support frame 11 to divide the frame opening FOP into a plurality of regions. The support bars 12 and 13 can be used to support the deposition masks 20 to be described below.

[0067] The support bars 12 and 13 can include at least one first support bar 12 and a plurality of second support bars 13. For example, as shown in Figures 1 to 3 , the frame set 10 can be configured to include a plurality of first support bars 12.

[0068] The plurality of first support bars 12 can be arranged to be spaced apart from each other by a predetermined distance in the first direction DR1. A pair of second support bars 13 can be outermost bars among the support bars 12 and 13 located at outermost regions of the mask assembly 100 in the first direction DR1. In other words, the plurality of first support bars 12 can be arranged between the pair of second support bars 13.

[0069] In the present embodiment, the distance between the adjacent pair of support bars 12 and 13 can be constant. However, the inventive concept is not limited to this example. For example, the distance between the support bars 12 and 13 can be changed according to the size or shape of a deposition region of a target substrate SUB (see, for example, Figure 4 ) on which a deposition process is to be performed.

[0070] In the present embodiment, the width of the first support bar 12 can be different from the width of the second support bar 13 when measured in the first direction DR1. Figures 1 to 3 An example in which the width of the second support bar 13 in the first direction DR1 is greater than the width of the first support bar 12 in the first direction DR1 is shown. However, the inventive concept is not limited to specific values for the width of the first support bar 12 and the second support bar 13 in the first direction DR1. The width of the first support bar 12 and the second support bar 13 in the first direction DR1 can be changed according to the size or shape of a deposition region of a target substrate SUB (see, for example, Figure 4 ) on which a deposition process is to be performed.

[0071] The support frame 11 can include inner side portions disposed adjacent to the frame openings FOP. In the present embodiment, a plurality of coupling receiving ports GR can be defined in a portion of the inner side portions positioned to face each other in the second direction DR2. The coupling receiving ports GR can be disposed in pairs, and each pair of coupling receiving ports GR can be disposed to face each other in the second direction DR2. The pairs of coupling receiving ports GR can be arranged in the first direction DR1.

[0072] Each pair of coupling receiving ports GR can be associated with a corresponding one of the support bars 12 and 13. For example, opposite end portions of each of the support bars 12 and 13 can be coupled to a corresponding pair of coupling receiving ports GR, and thus each of the support bars 12 and 13 can be fastened to the support frame 11.

[0073] In the present embodiment, the second support bar 13 can be in contact with the inner side portions of the support frame 11 that face each other in the first direction DR1. In other words, no gap region can be formed between the second support bar 13 and the inner side portions of the support frame 11 that face each other in the first direction DR1.

[0074] In the present embodiment, the support bars 12 and 13 can be configured to be inserted into the coupling receiving ports GR of the support frame 11, but the inventive concept is not limited to a method for fastening the support bars 12 and 13 to the support frame 11.

[0075] The deposition masks 20 can be mounted on the frame set 10. In the present embodiment, each of the support bars 12 and 13 of the frame set 10 can be provided to have a top surface substantially coplanar with a top surface of the support frame 11. In this case, the deposition masks 20 can be more stably mounted on the frame set 10.

[0076] Each of the deposition masks 20 can extend in the first direction DR1. The deposition masks 20 can be arranged in the second direction DR2.

[0077] Each of the deposition masks 20 can include a mask unit 21 and a plurality of cut portions 22.

[0078] The mask unit 21 can extend in the first direction DR1. The mask unit 21 can be a portion of the deposition mask 20 substantially supported by the frame set 10. In other words, both end portions of the mask unit 21 opposite to each other in the first direction DR1 can partially overlap with the long side of the support frame 11. The end portions of the mask unit 21 partially overlapping with the long side of the support frame 11 can be bonded to the long side of the support frame 11 by a bonding process such as a welding process.

[0079] The cut portions 22 can be placed adjacent to both end portions of the mask unit 21 opposite to each other in the first direction DR1. For example, the cut portions 22 can be connected to both end portions of the mask unit 21 opposite to each other in the first direction DR1. In other words, the mask unit 21 can be placed between the pair of cut portions 22. The cut portions 22 can not be in contact with the frame set 10.

[0080] According to the present embodiment, each of the deposition masks 20 can be supported by a fastening member (not shown) when each of the deposition masks 20 is not yet mounted on the frame set 10. The fastening member can be, for example, a clamp. Each of the cut portions 22 provided at opposite end portions of each deposition mask 20 can be fastened by the fastening member, and thus, the deposition mask 20 can be stably supported by the fastening member. Further, the fastening member can be configured to fasten each of the cut portions 22 and to exert a tension on the deposition mask 20. The tension can be exerted on the deposition mask 20 in the first direction DR1.

[0081] In the present embodiment, the cut portions 22 can be cut after a process of bonding the mask unit 21 to the support frame 11. Figure 3 The mask assembly 100A from which the cut portions 22 are separated is shown. In other words, if the cutting process is completed, the mask assembly 100A can include only the frame set 10 and the mask unit 21. It will be described with reference to FIG. 2A. Figures 5 to 8 The deposition mask 20 will be described in more detail.

[0082] Figure 4 is a cross-sectional view schematically showing a deposition system 1000 according to an embodiment of the present inventive concept.

[0083] in combination Figure 3 with reference Figure 4 to the above-described mask assembly 100A can be used in a process of depositing an organic material.

[0084] For example, a deposition system 1000 according to an embodiment of the inventive concept can include, in addition to the mask assembly 100A, a chamber CHB, a deposition source S, a stage STG, and a moving plate PP. The deposition source S, the stage STG, the moving plate PP, and the mask assembly 100A can be placed in the chamber CHB.

[0085] The chamber CHB can be configured to provide an isolated space. The chamber CHB can have at least one door GT. The isolated space of the chamber CHB can be optionally connected to the outside through the door GT. The mask assembly 100A and the target substrate SUB can enter or exit the chamber CHB through the door GT.

[0086] The deposition source S can be disposed in a lower region of the chamber CHB. The deposition source S can include a deposition material. Here, the deposition material can include at least one of an inorganic material, an organic material, and a metallic material capable of sublimation or evaporation. The following description will relate to an example in which the deposition source S is prepared to include an organic material for manufacturing an organic light emitting device (not shown).

[0087] The stage STG can be placed above the deposition source S. The mask assembly 100A can be mounted on the stage STG. The mask assembly 100A can be disposed to face the deposition source S. Figure 4 A vertical section of the mask assembly 100A taken along a line I-I' of Figure 3 is shown in FIG. 11. The stage STG can overlap the support frame 11 of the mask assembly 100A and can be used to support the mask assembly 100A. The stage STG can not overlap the frame opening FOP (see, for example, Figure 1 and Figure 2 ) defined in the support frame 11. In other words, the stage STG can be located outside of a travel path of the deposition material to be supplied from the deposition source S to the target substrate SUB.

[0088] The target substrate SUB can be mounted on the mask assembly 100A. The pattern provided in the mask unit 21 of the mask assembly 100A can be used to optionally deposit an organic material on a desired area of the target substrate SUB.

[0089] In the present embodiment, the moving plate PP can be configured to align the target substrate SUB with the mask assembly 100A. For example, the moving plate PP can be configured to move the target substrate SUB using electric force or magnetic force. The moving plate PP can be configured to be movable in a vertical direction or a horizontal direction.

[0090] In an embodiment, the moving plate PP can be used to fasten the target substrate SUB to the top surface of the mask assembly 100A. Since the target substrate SUB is fastened to the mask assembly 100A by the moving plate PP, it can be possible to improve the accuracy of the deposition process.

[0091] In the present embodiment, a deposition material in the deposition source S can be sublimated or evaporated, and the sublimated or evaporated deposition material can be supplied onto the target substrate SUB through the mask unit 21 of the mask assembly 100A. The deposition material can not be supplied onto a region of the target substrate SUB that is covered by the mask unit 21 (sometimes referred to as a covered region).

[0092] Figure 5 is a plan view of the deposition mask 20.

[0093] As described above, the deposition mask 20 according to the embodiment of the present inventive concept can include the mask unit 21 and the plurality of cut portions 22.

[0094] Referring to Figure 5 , the mask unit 21 can include a plurality of regions arranged in the first direction DR1. For example, the mask unit 21 can include a patterned region PA overlapping a center of the mask unit 21 and a plurality of bonding regions BA. The bonding regions BA can be disposed adjacent to both end portions of the patterned region PA opposite to each other in the first direction DR1. For example, the bonding regions BA can be connected to both end portions of the patterned region PA opposite to each other in the first direction DR1.

[0095] The patterned region PA can overlap a frame opening FOP (see, for example, Figure 2 ) of the support frame 11. A pattern portion PT in which a plurality of pattern holes are defined can be disposed in the patterned region PA.

[0096] Each of the bonding regions BA can overlap the aforementioned portion of the long side of the support frame 11. In other words, a width of each of the bonding regions BA can be substantially equal to a width of the long side of the support frame 11 when measured in the first direction DR1. A pattern hole can not be defined in the bonding regions BA, i.e., the bonding regions BA can not have any pattern hole. In other words, an open ratio of each of the bonding regions BA can be 0.

[0097] The pattern portion PT can include a first pattern portion PT1 and a plurality of second pattern portions PT2. In the present embodiment, a pattern hole can be defined in each of the first pattern portion PT1 and the second pattern portions PT2

[0098] The first pattern portion PT1 can include a plurality of deposition portions AT and at least one non-deposition portion NAT. For example, as shown in Figure 5 , the first pattern portion PT1 can include N deposition portions AT and (N-1) non-deposition portions NAT.

[0099] The deposition portions AT can be spaced apart from each other in the first direction DR1. Figure 4 The target substrate SUB can include a plurality of deposition regions on which deposition material is to be deposited, and the deposition portions AT can correspond to the deposition regions of the target substrate SUB, respectively. In other words, each of the deposition portions AT can include a region exposed by the mask assembly 100A.

[0100] Each of the non-deposition portions NAT can be positioned between the deposition portions AT. In other words, each of the non-deposition portions NAT can be disposed to separate each of the deposition portions AT from another deposition portion AT adjacent to the deposition portion AT. Each of the non-deposition portions NAT can include a region covered by the second support bar 13 described with reference to Figure 1 and Figure 2 the first support bar 12. In this case, the deposition material provided during the deposition process can not be deposited on the covered region corresponding to each of the non-deposition portions NAT.

[0101] In the present embodiment, a plurality of pattern holes spaced apart from each other by a predetermined distance can be arranged in each of the deposition portions AT and the non-deposition portions NAT. For example, in each of the deposition portions AT and the non-deposition portions NAT, the plurality of pattern holes can be arranged to form a first arrangement structure. Each of the deposition portions AT and the non-deposition portions NAT can be disposed to have an opening ratio to be referred to as a first opening ratio. In an example, the pattern holes defined in each of the deposition portions AT and the non-deposition portions NAT will be referred to as first pattern holes. This will be described in more detail with reference to Figures 6 to 8 .

[0102] The second pattern portions PT2 can be disposed near opposite end portions of the first pattern portion PT1 in the first direction DR1. Each of the second pattern portions PT2 can be disposed between one of the opposite end portions of the first pattern portion PT1 and one of the bonding regions BA. In an embodiment, each of the second pattern portions PT2 can be disposed to connect one of the opposite end portions of the first pattern portion PT1 to one of the bonding regions BA. For example, each of the second pattern portions PT2 can be disposed to connect an outermost deposition portion AT of the deposition portions AT of the first pattern portion PT1 to one of the bonding regions BA. Each of the second pattern portions PT2 can include a region covered by the second support bar 13 described with reference to Figure 1 and Figure 2 . Thus, the deposition material provided during the deposition process can not be deposited on the covered region corresponding to each of the second pattern portions PT2.

[0103] In the present embodiment, a width of each of the second pattern portions PT2 can be different from a width of each of the non-deposition portions NAT when measured in the first direction DR1. For example, asFigure 5 As shown in FIG. 2, a width of each of the second pattern portions PT2 in the first direction DR1 can be greater than a width of each of the barrier portions NAT in the first direction DR1. However, the inventive concept can not be limited to the widths of the second pattern portions PT2 and the barrier portions NAT in the first direction DR1. The widths of the second pattern portions PT2 and the barrier portions NAT in the first direction DR1 can be variously changed according to a size or a shape of a deposition area of a target substrate SUB (see, for example, FIG. 1) on which a deposition process is to be performed. Figure 4 ) of the target substrate SUB (see, for example, FIG. 1) on which a deposition process is to be performed.

[0104] In the present embodiment, a plurality of pattern holes spaced apart from each other by a predetermined distance can be arranged in each of the second pattern portions PT2. In each of the second pattern portions PT2, some of the plurality of pattern holes can be arranged to form a second arrangement structure. At least a portion of each of the second pattern portions PT2 can be provided to have a second opening rate. In an embodiment, a second pattern hole can be defined in each of the second pattern portions PT2. This will be described in more detail with reference to Figures 6 to 8 .

[0105] Each of the cut portions 22 can be provided near an outer end portion of the mask unit 21 in the first direction DR1. In other words, opposite end portions of the mask unit 21 can be connected to the cut portions 22, respectively.

[0106] Each of the cut portions 22 can include a plurality of clamping portions CP located at an outermost region in the first direction DR1. The clamping portions CP can be fastened by the aforementioned fastening members (not shown).

[0107] In the present embodiment, a clamping notch CG can be defined between the clamping portions CP. The clamping notch CG can be provided to have a shape concaved inward from an outer side of the deposition mask 20 in the first direction DR1. As shown in Figure 5 , the clamping notch CG can be provided to have a curved arc portion. In this case, it can be possible to prevent or inhibit the deposition mask 20 from being deformed or damaged due to a tension applied to the deposition mask 20.

[0108] Each of the cut portions 22 can further include a dummy pattern portion DP. The dummy pattern portion DP can be provided adjacent to the bonding area BA of the mask unit 21. For example, the dummy pattern portion DP can be connected to the bonding area BA of the mask unit 21. In other words, the dummy pattern portion DP can be provided between the clamping portions CP and the bonding area BA.

[0109] In the present embodiment, a plurality of pattern holes can be defined in the dummy pattern portion DP. The inventive concept is not limited to the number, shape, and arrangement of the pattern holes defined in the dummy pattern portion DP or the open ratio of the dummy pattern portion DP. For example, the dummy pattern portion DP can be provided to have the same open ratio as that of the deposition portion AT. In other words, the pattern holes defined in the dummy pattern portion DP can be provided to have the same arrangement as that of the first pattern holes (i.e., the first arrangement).

[0110] The dummy pattern portion DP can be configured to absorb the tension applied to the pattern portion PT through the clamping portion CP. Accordingly, the dummy pattern portion DP can prevent or inhibit the pattern portion PT from being deformed due to the tension applied to the deposition mask 20.

[0111] In the present embodiment, each of the cut portions 22 is shown to have one dummy pattern portion DP, but the inventive concept is not limited to the number of the dummy pattern portions DP provided in each of the cut portions 22.

[0112] Figure 6 is an enlarged view illustrating a portion "A" of Figure 5 . Figure 7 is an enlarged view illustrating a first pattern portion PT1 shown in Figure 6 . Figure 8 is an enlarged view illustrating a first portion AR1 shown in Figure 6 .

[0113] Referring to Figures 6 to 8 , the first pattern portion PT1 can be provided to have a first open ratio. For example, a plurality of first pattern holes H1 can be defined in the first pattern portion PT1. The first pattern holes H1 can be arranged in a matrix shape on an area of the deposition mask 20 occupied by the first pattern portion PT1. The size and shape of each of the first pattern holes H1 can depend on the size of each cell to be defined on the target substrate SUB as described above. In other words, the design diameter of each of the first pattern holes H1 can be determined according to the size of each pattern to be deposited on the target substrate SUB. In an embodiment, the diameter of each of the first pattern holes H1 can range from about 17 μm to about 22 μm.

[0114] As shown in Figure 7 , each of the first pattern holes H1 can have an octagonal shape. However, the shape of each of the first pattern holes H1 can be variously changed (e.g., changed into one of a polygonal shape, a circular shape, and an elliptical shape).

[0115] The first pattern holes H1 can be arranged to have a first arrangement. For example, in such a first arrangement, the first pattern holes H1 can be arranged such that a minimum distance between adjacent ones of the first pattern holes H1 is given as a first distance D1. In the present embodiment, the first distance D1 can range from about 15 pm to about 18 pm.

[0116] In the present embodiment, a plurality of second pattern holes H2 can be defined in at least one region of each of the second pattern portions PT2.

[0117] For example, each of the second pattern portions PT2 can comprise a first portion AR1 and a second portion AR2. The first portion AR1 and the second portion AR2 can be arranged in the first direction DR1. The first portion AR1 can be disposed outside the second portion AR2 in the first direction DR1. In other words, the first portion AR1 can be disposed adjacent to the bonding area BA. The second portion AR2 can be disposed between the first portion AR1 and the first pattern portion PT1. In embodiments, the second portion AR2 can be disposed to connect the first portion AR1 to the first pattern portion PT1.

[0118] The first portion AR1 can be disposed to have a second open area ratio. The second open area ratio can be smaller than the first open area ratio. In particular, a plurality of second pattern holes H2 can be defined in the first portion AR1. The second pattern holes H2 can be arranged to form a plurality of rows over the area of the deposition mask 20 occupied by the first portion AR1. A width of the first portion AR1 in the first direction DR1 can depend on the number of rows of second pattern holes H2. In the present embodiment, the second pattern holes H2 arranged to form at least two rows can be defined in the first portion AR1. As shown in FIG. 2B, the second pattern holes H2 can be disposed to form a plurality of rows arranged in the first direction DR1, and in this case, each of the second pattern holes H2 located in an even row can be offset from a corresponding one of the second pattern holes H2 located in an odd row in the second direction DR2 by an offset distance. Here, the offset distance can be smaller than the distance in the second direction DR2 between each pair of adjacent second pattern holes H2, e.g. the third distance D3 in FIG. 2B. In embodiments, the offset distance can be half the third distance D3. The size and shape of each of the second pattern holes H2 can be equal to the size and shape of each of the first pattern holes H1. Figure 6 Figure 8 In the present embodiment, the second pattern holes H2 can be arranged to have a second arrangement. In such a second arrangement, the second pattern holes H2 can be arranged such that a minimum distance between adjacent ones of the second pattern holes H2 is given as a second distance D2. In the present embodiment, the second distance D2 can be greater than the first distance D1. For example, the second distance D2 can be greater than or equal to about 20 pm.

[0119] In the present embodiment, the second pattern holes H2 can be arranged to have a second arrangement. In such a second arrangement, the second pattern holes H2 can be arranged such that a minimum distance between adjacent ones of the second pattern holes H2 is given as a second distance D2. In the present embodiment, the second distance D2 can be greater than the first distance D1. For example, the second distance D2 can be greater than or equal to about 20 pm.​

[0120] A plurality of first pattern holes H1 can be provided in the second portion AR2. In other words, the first pattern holes H1 in the second portion AR2 can be arranged to have a first arrangement structure. The first pattern holes H1 can be arranged in a matrix shape on an area of the deposition mask 20 occupied by the second portion AR2. In the present embodiment, the aperture ratio of the second portion AR2 can be equal to the aperture ratio of the first pattern portion PT1. In other words, the range of the minimum distance between the first pattern holes H1 defined in the second portion AR2 can be from about 15 μm to about 18 μm.

[0121] In the present embodiment, in the second portion AR2, the maximum distance between the first pattern holes H1 can be substantially equal to the first distance D1. Unlike the foregoing embodiments of the inventive concept, if the pattern portion PT does not include the second pattern portion PT2 (particularly, the first portion AR1 of the second pattern portion PT2), the pattern portion PT having the first aperture ratio can be directly connected to the bonding area BA having an aperture ratio of 0. In this case, due to the difference in aperture ratio between the bonding area BA and the pattern portion PT, stress can be applied at a boundary region between the bonding area BA and the pattern portion PT due to the tension from the clamping portion CP. This stress can cause deformation of the first pattern holes H1 defined in a region of the pattern portion PT adjacent to the bonding area BA or cause misalignment of the deposition mask 20 with respect to the frame set 10. In contrast, according to the embodiments of the inventive concept, since the pattern portion PT includes the second pattern portion PT2 having a second aperture ratio smaller than the first aperture ratio, i.e., the second pattern portion PT2 is placed between the bonding area BA and the first pattern portion PT1, it can be possible to reduce the stress applied on the boundary region between the bonding area BA and the pattern portion PT.

[0122] Accordingly, in the present embodiment, it can be possible to improve the durability of the deposition mask and thereby improve the accuracy and uniformity in the deposition process.

[0123] Figure 9 and Figure 10 are each a magnified view showing the second pattern portion according to the embodiments of the inventive concept. Figure 11 is a magnified view showing Figure 10 the third portion AR3 shown in

[0124] For the sake of brief description, the previously described elements can be identified by the same reference numerals without repeating the overlapping description thereof. Other elements not described individually can be configured to have substantially the same technical features as those of the elements in the previously described embodiments. Figure 9 and Figure 10 each show a region corresponding to the region shown in Figure 6 .

[0125] Referring to Figure 9 , the deposition mask 20-1 according to the embodiment of the inventive concept can include second pattern portions PT2-1, each of which is configured to include only the first portion AR1. In other words, the second portion AR2 described above can not be provided in the second pattern portions PT2-1. The first portion AR1 of the deposition mask 20-1 can be configured to have substantially the same features as those of the first portion AR1 described above, and thus a detailed description thereof will be omitted.

[0126] Referring to Figure 10 and Figure 11 , each of the second pattern portions PT2-2 of the deposition mask 20-2 can further include a third portion AR3. In other words, each of the second pattern portions PT2-2 can include the first portion AR1, the second portion AR2, and the third portion AR3.

[0127] In the present embodiment, the third portion AR3 can have a third opening ratio. The third opening ratio can be smaller than the second opening ratio. Specifically, a plurality of third pattern holes H3 can be defined in the third portion AR3. The third pattern holes H3 can be arranged in a matrix shape on an area of the deposition mask 20-2 occupied by the third portion AR3. The size and shape of each of the third pattern holes H3 can be substantially equal to those of each of the first pattern holes H1 and the second pattern holes H2.

[0128] In the present embodiment, the third pattern holes H3 can be arranged to have a third arrangement structure. In such a third arrangement structure, the third pattern holes H3 can be arranged such that a minimum distance between adjacent ones of the third pattern holes H3 is given as a third distance D3. In the present embodiment, the third distance D3 can be greater than the second distance D2. For example, the third distance D3 can be greater than about 50 µm. In the present embodiment, it can be possible to more effectively prevent or suppress concentration of stress at the boundary region between the second pattern portion PT2-2 and the bonding area BA.

[0129] Figures 12 to 14 are each an enlarged view illustrating a barrier portion according to an embodiment of the inventive concept.

[0130] For the sake of brief description, the previously described elements can be identified by the same reference numerals without repeating overlapping descriptions thereof. Other elements not described individually can be configured to have substantially the same technical features as those of the elements in the previously described embodiments. Figures 12 to 14 Each of FIGS. 1A to 1C shows a region corresponding to the portion "B" shown in FIG. 1. Figure 5

[0131] Referring to Figure 12 ,​Figure 13 and Figure 14 According to some embodiments of the present invention, the deposition mask 20-3, deposition mask 20-4 and deposition mask 20-5 may respectively include a blocking part NAT-3, a blocking part NAT-4 and a blocking part NAT-5, each of the blocking part NAT-3, the blocking part NAT-4 and the blocking part NAT-5 being configured to have an aperture ratio smaller than that of each of the deposition parts AT.

[0132] like Figure 12 As shown, there are no patterned holes in the blocking portion NAT-3 of the deposition mask 20-3. In other words, the aperture ratio of each of the blocking portions NAT-3 can be 0. Here, each of the deposition portions AT can be configured to have a first aperture ratio. In other words, a first patterned hole H1 having a first arrangement structure can be defined in each of the deposition portions AT. The first patterned hole H1 can be configured to have substantially the same features as the first patterned hole H1 in the previously described embodiment, and its detailed description will be omitted.

[0133] In the implementation method, such as Figure 13 As shown, each of the blocking portions NAT-4 of the deposition mask 20-4 may have a fourth aperture ratio that is less than the first aperture ratio. Here, each of the deposition portions AT may have a first aperture ratio. For example, a plurality of fourth pattern holes H4 may be provided in each of the blocking portions NAT-4, and a first pattern hole H1 may be provided in each of the deposition portions AT. The first pattern hole H1 may be configured to have substantially the same features as the first pattern hole H1 in the previously described embodiment, and its detailed description will be omitted.

[0134] The fourth patterned aperture H4 can be arranged to form multiple rows on the area occupied by each of the blocking portions NAT-4 of the deposition mask 20-4. The rows of fourth patterned apertures H4 can be arranged in the first direction DR1, and in this case, the fourth patterned apertures H4 in two adjacent rows can be arranged alternately relative to each other in the second direction DR2. In this embodiment, the size and shape of each of the fourth patterned apertures H4 can be the same as the size and shape of each of the first to third patterned apertures H1.

[0135] The fourth patterned hole H4 can be arranged in a fourth arrangement structure. In such a fourth arrangement structure, the fourth patterned hole H4 can be arranged such that the minimum distance between adjacent fourth patterned holes H4 is given as a fourth distance (not shown). In this embodiment, the fourth distance can be greater than the first distance D1. For example, the fourth distance can be greater than or equal to the second distance D2. In other words, the fourth distance can be greater than or equal to about 20 μm.

[0136] In the implementation method, such as Figure 14As shown in FIG. 20, each of the blocking portions NAT-5 of the deposition mask 20-5 can have a fourth opening ratio smaller than the first opening ratio. For example, a plurality of fourth pattern holes H4 can be provided in each of the blocking portions NAT-5, and the first pattern holes H1 can be provided in each of the deposition portions AT. The first pattern holes H1 can be configured to have substantially the same features as the first pattern holes H1 in the previously described embodiments, and detailed description thereof will be omitted.

[0137] The fourth pattern holes H4 can be arranged in a matrix shape on the area of the deposition mask 20-5 occupied by each of the blocking portions NAT-4. In the present embodiment, the size of each of the fourth pattern holes H4 can be smaller than the size of each of the first to third pattern holes H1 to H3. Further, the minimum distance between adjacent ones of the fourth pattern holes H4 can be substantially equal to the first distance D1 (see, for example, FIG. 19). Figure 7

[0138] According to the embodiments of the present inventive concept, it can be possible to improve accuracy and uniformity in the deposition process.

[0139] While exemplary embodiments of the present inventive concept have been particularly shown and described, it will be understood by those of ordinary skill in the art that changes can be made to the exemplary embodiments of the present inventive concept without departing from the spirit and scope of the claims.​

Claims

1. A deposition mask, comprising: a patterned region provided with pattern portions; a plurality of bonding regions provided at opposite ends of the patterned region in a first direction; and a plurality of dummy pattern portions provided near the opposite ends of the patterned region in the first direction, wherein the pattern portions comprise: a first pattern portion in which first pattern holes are defined; and a plurality of second pattern portions in which second pattern holes are defined, and which are located between the first pattern portion and the opposite ends of the bonding regions in the first direction, each of the second pattern portions connecting one of the opposite ends of the first pattern portion to one of the bonding regions, wherein a second distance, which is a minimum distance between adjacent ones of the second pattern holes, is greater than a first distance, which is a minimum distance between adjacent ones of the first pattern holes, and wherein each of the second pattern portions comprises: a first portion provided adjacent to a bonding region of the plurality of bonding regions, and in which the second pattern holes are defined; and a second portion provided between the first portion and the first pattern portion, and in which the first pattern holes are defined, and wherein the patterned region and the bonding regions are provided between the dummy pattern portions. each of the first pattern holes has a size equal to that of each of the second pattern holes.

2. The deposition mask of claim 1, wherein, the second distance is greater than or equal to 20 pm.

3. The deposition mask of claim 1, wherein, in the first portion, the second pattern holes are defined to form at least two rows.

4. The deposition mask of claim 3, wherein, each of the second pattern portions further comprises a third portion provided between the first portion and the bonding region, and in which third pattern holes are defined, 5. The deposition mask of claim 3, wherein, wherein a third distance, which is a minimum distance between adjacent ones of the third pattern holes, is greater than the second distance. the first pattern portion comprises:

6. The deposition mask of claim 1, wherein, a plurality of deposition portions spaced apart from each other in the first direction, and in which the first pattern holes are defined; and at least one barrier portion provided between the deposition portions. an open ratio of the barrier portion is less than an open ratio of each of the deposition portions.

7. The deposition mask of claim 6, wherein, 8. The deposition mask of claim 1, further comprising cut portions provided adjacent to the opposite ends of the plurality of bonding regions in the first direction, each of the cut portions comprises a dummy pattern portion in which dummy pattern holes are defined, and wherein the dummy pattern holes are defined to have a same arrangement structure as that of the first pattern holes. a clamping notch is defined at each of the cut portions, which is recessed inwardly from an outer side of the cut portion in the first direction.

9. The deposition mask of claim 8, wherein, each of the cut portions comprises a dummy pattern portion in which dummy pattern holes are defined, and the dummy pattern holes are defined to have a same arrangement structure as that of the first pattern holes. a clamping notch is defined at each of the cut portions, which is recessed inwardly from an outer side of the cut portion in the first direction.

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