Infrared camouflage fabric and method for manufacturing the same

Abstract

The application discloses an infrared camouflage fabric, which comprises a base layer, an infrared stealth layer and a camouflage layer arranged from inside to outside in sequence, the base layer is a flexible base cloth, the infrared emissivity of the infrared stealth layer is less than or equal to 0.2, the thickness of the infrared stealth layer is 5nm-2mu m, the camouflage layer is polyethylene or hydrogenated styrene-butadiene block copolymer, the camouflage layer is composed of blocks with different thicknesses and random distribution, the thickness of the camouflage layer ranges from 10mu m to 180mu m, and the average emissivity of the camouflage layer ranges from 0.2 to 0.7. The camouflage layer, the infrared stealth layer and the base layer of the infrared camouflage fabric constitute a unified whole, and the structure is simple and durable. The thickness of the camouflage layer is different and randomly distributed, the camouflage layer is not easy to peel off and fall off, the infrared stealth layer can be effectively protected, and the infrared stealth effect of the fabric can be ensured. The preparation method of the infrared camouflage fabric is simple and has high operability.

Description

An infrared camouflage fabric and its preparation method Technical Field

[0001] This invention relates to the field of infrared camouflage materials and their preparation technology, specifically an infrared camouflage fabric and its preparation method. Background Technology

[0002] With the development of optoelectronic technology, thermal infrared detection plays a crucial role in modern military reconnaissance and surveillance, and the threat of thermal infrared radiation is constantly escalating. Infrared stealth technology reduces the infrared radiation characteristics of a target object to minimize the difference in infrared radiation features between the target object and its environment, making it difficult for detection systems to detect the target. Existing infrared stealth technologies reduce the infrared radiation characteristics of a target object by suppressing its surface temperature or emissivity.

[0003] US Patent 5281460A discloses an infrared camouflage covering comprising an upper and lower layer. The lower layer is a mesh material, and the upper layer is composed of several strips with different emissivity randomly combined, with the strips fixed to the mesh material of the lower layer. This structure can simulate the irregular distribution of infrared radiation in complex environments, achieving infrared camouflage. However, this splicing structure, which achieves random distribution of infrared radiation by splicing materials with different infrared emissivity, suffers from problems such as structural complexity, easy detachment of spliced ​​components, and cumbersome processing. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide an infrared camouflage fabric with a simple structure and a durable method for preparing the same, which addresses the shortcomings of the prior art. The camouflage layer has a varying thickness and is randomly distributed, making it difficult to peel off and fall off. This effectively protects the infrared stealth layer and ensures the infrared stealth effect of the fabric.

[0005] The technical solution adopted by the present invention to solve the above-mentioned technical problems is as follows: an infrared camouflage fabric, comprising a base layer, an infrared stealth layer and a camouflage layer arranged sequentially from the inside to the outside, wherein the base layer is a flexible base fabric, the infrared emissivity of the infrared stealth layer is ≤0.2, the thickness of the infrared stealth layer is 5nm-2μm, the camouflage layer is polyethylene or hydrogenated styrene-butadiene block copolymer, the camouflage layer is composed of blocks of varying thickness and randomly distributed, the thickness range of the camouflage layer is 10μm-180μm, and the average emissivity range of the camouflage layer is 0.2-0.7.

[0006] The camouflage layer of the infrared camouflage fabric of this invention is made of polyethylene (PE) or hydrogenated styrene-butadiene block copolymer (SEBS). The camouflage layer, infrared stealth layer, and base layer form a unified whole, with a simple and durable structure. The camouflage layer has varying thicknesses and is randomly distributed, making it difficult to peel or detach, effectively protecting the infrared stealth layer and ensuring the infrared stealth effect of the fabric.

[0007] SEBS is a linear triblock copolymer with polystyrene as the end block and ethylene-butene copolymer (obtained by hydrogenating polybutadiene) as the middle elastic block. This material does not contain unsaturated double bonds, thus exhibiting good stability and aging resistance. It is also a thermoplastic elastomer. When SEBS or PE is thin, its average transmittance in the infrared band is above 70%.

[0008] The emissivity of the aforementioned PE and SEBS materials is not constant, but increases with increasing thickness, and the emissivity-thickness relationship of these materials is a nearly linear and continuous curve. Therefore, this invention uses PE or SEBS of varying thicknesses and random distribution as a camouflage layer, with the thickness ranging from 10μm to 180μm and the average emissivity ranging from 0.2 to 0.7. The thermal imaging color development exhibits a linear distribution of blue-green-yellow-orange-red with increasing thickness.

[0009] Furthermore, the camouflage layer can also be other known high-transmittance infrared materials, which have an average transmittance of over 70% in the infrared band when thin, and this transmittance varies with thickness.

[0010] Preferably, the camouflage layer has a smooth transition between blocks of different thicknesses, which appears as a smoother and more natural connection between color blocks in thermal imaging, resulting in a better camouflage effect.

[0011] Preferably, the infrared stealth layer is a single-layer structure or a multi-layer structure.

[0012] Preferably, the infrared stealth layer is a single-layer structure with a thickness of 10nm-100nm, and is a metallic element or alloy layer. Alternatively, preferably, the infrared stealth layer is a multi-layer structure, which is a stacked structure consisting of alternating metallic elements and semiconductor layers. The specific structure of the infrared stealth layer is selected according to actual needs. When full-infrared stealth processing and enhanced heat reflection are required, a single-layer structure with a thickness of 10nm-100nm can be selected; when enhanced heat dissipation capacity of the fabric is required, a multi-layer structure can be selected.

[0013] Preferably, the metal elemental layer is any one of Au, Ag, Cu, and Al, the semiconductor layer is a semiconductor elemental layer or a semiconductor compound layer, the semiconductor elemental layer is any one of Si and Ge, and the semiconductor compound layer is any one of ZnS, ZnSe, and KCl.

[0014] Preferably, the infrared stealth layer comprises a first Ag layer, a first Si layer, a second Ag layer, and a second Si layer arranged sequentially from the substrate layer. The thickness of the first Ag layer is 40nm-100nm, the thickness of the first Si layer is 700nm-800nm, the thickness of the second Ag layer is 8nm-30nm, and the thickness of the second Si layer is 280nm-420nm. Ag has a refractive index of 0.13, an infrared emissivity of 0.02, and an average extinction coefficient of 2.85 in the 3μm-5μm and 8μm-14μm wavelength bands, making it a light-absorbing material. Si has a refractive index of 3.47, an infrared emissivity of 0.1, and an extinction coefficient close to 0 across the entire wavelength band, making it a non-light-absorbing material. A Fabry-Perot resonant cavity structure is formed by stacking Ag and Si. This structure allows electromagnetic waves of specific wavelengths to oscillate within the resonant cavity. During continuous oscillation, infrared radiation in a specific wavelength band (5μm-8μm) is absorbed and emitted by the Ag layer, while infrared radiation in the window wavelength band (3μm-5μm, 8μm-14μm) is not absorbed, thus achieving selective infrared stealth of the fabric. The infrared stealth layer composed of the first Ag layer, the first Si layer, the second Ag layer, and the second Si layer is a selective infrared stealth layer. It has low infrared emissivity in the 3μm-5μm and 8μm-14μm wavelength bands and high infrared emissivity in the 5μm-8μm wavelength band, thereby achieving infrared stealth in the detection window wavelength band (3μm-5μm and 8μm-14μm) and heat dissipation from infrared radiation in the non-detection window wavelength band (5μm-8μm).

[0015] Preferably, the flexible base fabric is a PET base fabric or a non-woven fabric, and the thickness of the base layer is 100nm-100μm. The thickness of the base layer has no effect on the infrared camouflage performance of the fabric of the present invention, but only has a certain impact on the processing time, aesthetics, and comfort of the fabric.

[0016] The method for preparing the above-mentioned infrared camouflage fabric includes the following steps:

[0017] S1: Provide a flexible base fabric as the base layer and pre-treat the flexible base fabric;

[0018] S2: Deposit an infrared stealth layer on the substrate;

[0019] S3: Prepare a camouflage layer on the infrared stealth layer.

[0020] Of the above methods for preparing infrared camouflage fabric, the preferred method is as follows:

[0021] In step S1, the pretreatment includes cleaning, drying, and smoothing. The cleaning process involves placing the flexible substrate in pure water or an organic solvent and ultrasonically cleaning it at room temperature for 15-30 minutes. The drying process involves placing the cleaned flexible substrate in a dryer and drying it for 10-20 minutes at a temperature of 60-80℃ and a wind speed of 6-8m / s. The smoothing process involves using a calendering process, where the dried flexible substrate is physically calendered using pressure rollers. The pressure roller temperature is 80-120℃, the pressure roller pressure is 1-3 tons, and the pressure roller speed (outermost linear speed) is 1-3 m / min.

[0022] In step S2, the deposition includes physical vapor deposition (PVD) or chemical vapor deposition (CVD). The physical vapor deposition includes sputtering, electron beam evaporation or thermal evaporation. The chemical vapor deposition includes atomic layer deposition (ALD) or plasma-enhanced chemical vapor deposition (PECVD).

[0023] In step S3, the process of preparing the camouflage layer on the infrared stealth layer is as follows: a mask is provided, PE solution coating or SEBS solution coating is sprayed onto the mask, and the camouflage layer is obtained after drying.

[0024] Compared with existing technologies, this invention has the following advantages: The camouflage layer, infrared stealth layer, and base layer of the infrared camouflage fabric of this invention form a unified whole, with a simple and durable structure. The camouflage layer is not easily peeled or detached, effectively protecting the infrared stealth layer and ensuring the infrared stealth effect of the fabric. The camouflage layer has varying thicknesses and is randomly distributed, simulating the infrared distribution in the natural environment to achieve infrared camouflage. The preparation method of the infrared camouflage fabric of this invention is simple and highly operable. Attached Figure Description

[0025] Figure 1 is a cross-sectional schematic diagram of the infrared camouflage fabric of Examples 1-2;

[0026] Figure 2 is a cross-sectional schematic diagram of the infrared camouflage fabric of Example 3;

[0027] Figure 3 shows the thermal images of the nine blocks in the infrared thermometer gun in Example 1;

[0028] Figure 4 shows the emissivity spectra of SEBS blocks 1, 2, and 3 in the 3μm-20μm band in Example 1;

[0029] Figure 5 shows the thermal images of the nine blocks in the infrared thermometer gun in Example 2;

[0030] The specific reference numerals in the figure are as follows:

[0031] 10 - Base layer; 20 - Infrared stealth layer; 21 - First Ag elemental layer; 22 - First Si elemental layer; 23 - Second Ag elemental layer; 24 - Second Si elemental layer; 30 - Camouflage layer. Detailed Implementation

[0032] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments.

[0033] The infrared camouflage fabric of Example 1, as shown in Figure 1, includes a base layer 10, an infrared stealth layer 20, and a camouflage layer 30 arranged sequentially from the inside out. The base layer 10 is a flexible base fabric. The infrared emissivity of the infrared stealth layer 20 is ≤0.2, and the thickness of the infrared stealth layer 20 is 5nm-2μm. The camouflage layer 30 is a hydrogenated styrene-butadiene block copolymer (SEBS). The camouflage layer 30 is composed of randomly distributed blocks of varying thicknesses. The thickness of the camouflage layer 30 ranges from 10μm to 180μm, and the average emissivity of the camouflage layer 30 ranges from 0.2 to 0.7.

[0034] In Example 1, the substrate 10 is a nonwoven fabric with a thickness of 10 μm, and the infrared stealth layer 20 includes a first Ag elemental layer 21, a first Si elemental layer 22, a second Ag elemental layer 23, and a second Si elemental layer 24 arranged sequentially from the substrate 10. The thickness of the first Ag elemental layer 21 is 40 nm, the thickness of the first Si elemental layer 22 is 700 nm, the thickness of the second Ag elemental layer 23 is 8 nm, and the thickness of the second Si elemental layer 24 is 280 nm.

[0035] The method for preparing the infrared camouflage fabric in Example 1 is as follows:

[0036] S1: Provide nonwoven fabric as the base layer and pre-treat the nonwoven fabric, including cleaning, drying and smoothing treatment; the cleaning process is as follows: place the flexible base in pure water or organic solvent and ultrasonically clean it for 15 minutes at room temperature; the drying process is as follows: place the cleaned flexible base in a dryer and dry it for 20 minutes at a temperature of 60℃ and a wind speed of 6m / s; the smoothing treatment process is as follows: use a known calendering process to physically calender the dried flexible base fabric with pressure rollers, wherein the pressure roller temperature is 80℃, the pressure roller pressure is 1 ton, and the pressure roller speed (outermost linear speed) is 2m / min;

[0037] S2: Depositing an infrared stealth layer on the substrate

[0038] S2-1: The first Ag monolayer was prepared on the substrate using magnetron sputtering at a vacuum level of 10. -3 Pa, the target material is elemental Ag target material, the process gas is Ar, the gas flow rate is 78 sccm, the flow rate is 2 m / min, the magnetron sputtering power is 180 W, and the magnetron sputtering time is 8 min;

[0039] S2-2: The first Si single-element layer was prepared using magnetron sputtering on the first Ag single-element layer, with a vacuum degree of 10. -3 Pa, the target material is elemental Si target material, the process gas is Ar, the gas flow rate is 160 sccm, the flow rate is 2 m / min, the magnetron sputtering power is 235 W, and the magnetron sputtering time is 16 min;

[0040] S2-3: A second Ag elemental layer was prepared using magnetron sputtering on the first Si elemental layer at a vacuum level of 10. -3 Pa, the target material is elemental Ag target material, the process gas is Ar, the gas flow rate is 60 sccm, the flow rate is 2 m / min, the magnetron sputtering power is 150 W, and the magnetron sputtering time is 5 min;

[0041] S2-4: A second Si elemental layer was prepared using magnetron sputtering on the second Ag elemental layer at a vacuum level of 10. -3 Pa, the target material is elemental Si target material, the process gas is Ar, the gas flow rate is 113 sccm, the flow rate is 2 m / min, the magnetron sputtering power is 200 W, and the magnetron sputtering time is 11 min;

[0042] S3: Prepare a camouflage layer on the infrared stealth layer. The preparation process is as follows: provide a mask, spray SEBS solution coating onto the mask, change the thickness of the block by controlling the number of sprays, and obtain the camouflage layer after the coating dries. Its thermal image is a random distribution of blue, green, yellow, orange and red.

[0043] A section was cut from the infrared camouflage fabric of Example 1, the camouflage layer of which contained 3*3 SEBS coated blocks. Figure 3 shows the thermal images of the nine blocks in Example 1 in an infrared thermometer. Block 1 has a thickness of 20 μm, an average emissivity of 0.29 in the 3 μm-20 μm band, an apparent temperature of 33.7 °C, and appears green in the infrared thermometer. Block 2 has a thickness of 60 μm, an average emissivity of 0.49 in the 3 μm-20 μm band, an apparent temperature of 34.3 °C, and appears yellow in the infrared thermometer. Block 3 has a thickness of 160 μm, an average emissivity of 0.61 in the 3 μm-20 μm band, an apparent temperature of 36.1 °C, and appears red in the infrared thermometer.

[0044] In addition, the infrared emissivity distribution of blocks 1, 2, and 3 in the 3μm-20μm band was measured, and its emissivity spectrum in the 3μm-20μm band is shown in Figure 4. As can be seen from Figure 4, the infrared emissivity distribution trend of blocks 1, 2, and 3 in the 3μm-14μm band is basically consistent with that in Figure 3, and the overall infrared emissivity increases with the increase of SEBS thickness. Furthermore, blocks 1, 2, and 3 exhibit high emissivity in the non-detection band at 5μm-8μm, making them difficult to detect by infrared detection methods under complex background conditions, while also possessing good heat dissipation performance.

[0045] The infrared camouflage fabric of Example 1 has both selective infrared stealth and random infrared camouflage functions.

[0046] The infrared camouflage fabric of Example 2, as shown in Figure 1, includes a base layer 10, an infrared stealth layer 20, and a camouflage layer 30 arranged sequentially from the inside out. The base layer 10 is a flexible base fabric. The infrared emissivity of the infrared stealth layer 20 is ≤0.2, and the thickness of the infrared stealth layer 20 is 5nm-2μm. The camouflage layer 30 is hydrogenated styrene-butadiene block copolymer (SEBS). The camouflage layer 30 is composed of blocks of varying thicknesses that are randomly distributed. The thickness of the camouflage layer 30 ranges from 10μm to 180μm, and the average emissivity of the camouflage layer 30 ranges from 0.2 to 0.7.

[0047] In Example 2, the substrate 10 is a PET base fabric with a thickness of 10 μm, and the infrared stealth layer 20 includes a first Ag elemental layer 21, a first Si elemental layer 22, a second Ag elemental layer 23, and a second Si elemental layer 24 arranged sequentially from the substrate 10. The thickness of the first Ag elemental layer 21 is 100 nm, the thickness of the first Si elemental layer 22 is 800 nm, the thickness of the second Ag elemental layer 23 is 30 nm, and the thickness of the second Si elemental layer 24 is 420 nm.

[0048] The method for preparing the infrared camouflage fabric in Example 2 is as follows:

[0049] S1: Provide PET base fabric as the base layer and pre-treat the nonwoven fabric. The pre-treatment includes cleaning, drying, and smoothing. The cleaning process is as follows: place the flexible base fabric in pure water or organic solvent and ultrasonically clean it for 15 minutes at room temperature. The drying process is as follows: place the cleaned flexible base fabric in a dryer and dry it for 10 minutes at a temperature of 60℃ and a wind speed of 6m / s. The smoothing process is as follows: use a known calendering process to physically calender the dried flexible base fabric with pressure rollers. The pressure roller temperature is 100℃, the pressure roller pressure is 1 ton, and the pressure roller speed (outermost linear speed) is 2m / min.

[0050] S2: Depositing an infrared stealth layer on the substrate

[0051] S2-1: The first Ag monolayer was prepared on the substrate using magnetron sputtering at a vacuum level of 10. -3 Pa, the target material is elemental Ag target material, the process gas is Ar, the gas flow rate is 95 sccm, the flow rate is 2 m / min, the magnetron sputtering power is 180 W, and the magnetron sputtering time is 10 min;

[0052] S2-2: The first Si single-element layer was prepared using magnetron sputtering on the first Ag single-element layer, with a vacuum degree of 10. -3 Pa, the target material is elemental Si target material, the process gas is Ar, the gas flow rate is 180 sccm, the flow rate is 2 m / min, the magnetron sputtering power is 235 W, and the magnetron sputtering time is 20 min;

[0053] S2-3: A second Ag elemental layer was prepared using magnetron sputtering on the first Si elemental layer at a vacuum level of 10. -3 Pa, the target material is elemental Ag target material, the process gas is Ar, the gas flow rate is 80 sccm, the flow rate is 2 m / min, the magnetron sputtering power is 160 W, and the magnetron sputtering time is 7 min;

[0054] S2-4: A second Si elemental layer was prepared using magnetron sputtering on the second Ag elemental layer at a vacuum level of 10. -3 Pa, the target material is elemental Si target material, the process gas is Ar, the gas flow rate is 150 sccm, the flow rate is 2 m / min, the magnetron sputtering power is 220 W, and the magnetron sputtering time is 14 min;

[0055] S3: Prepare a camouflage layer on the infrared stealth layer. The preparation process is as follows: provide a mask, spray SEBS solution coating onto the mask, change the thickness of the block by controlling the number of sprays, and obtain the camouflage layer after the coating dries. Its thermal image is a random distribution of blue, green, yellow, orange and red.

[0056] A section was cut from the infrared camouflage fabric obtained in Example 2, the camouflage layer of which contained 3*3 SEBS coated blocks. Figure 5 shows the thermal images of the nine blocks in Example 2 in an infrared thermometer. Block 1 has a thickness of 61 μm, an average emissivity of 0.51 in the 3μm-20μm band, an apparent temperature of 34.5℃, and appears orange in the infrared thermometer. Block 2 has a thickness of 120 μm, an average emissivity of 0.58 in the 3μm-20μm band, an apparent temperature of 35.9℃, and appears close to red in the infrared thermometer. Block 3 has a thickness of 11 μm, an average emissivity of 0.26 in the 3μm-20μm band, an apparent temperature of 33.2℃, and appears blue in the infrared thermometer.

[0057] The infrared camouflage fabric of Example 3, as shown in Figure 2, includes a base layer 10, an infrared stealth layer 20, and a camouflage layer 30 arranged sequentially from the inside out. The base layer 10 is a flexible base fabric. The infrared emissivity of the infrared stealth layer 20 is ≤0.2, and the thickness of the infrared stealth layer 20 is 5nm-2μm. The camouflage layer 30 is made of polyethylene and is composed of blocks of varying thicknesses that are randomly distributed. The thickness of the camouflage layer 30 ranges from 10μm to 180μm, and the average emissivity of the camouflage layer 30 ranges from 0.2 to 0.7.

[0058] In Example 3, the substrate 10 is a PET base fabric with a thickness of 10 μm, and the infrared stealth layer 20 is an Al single-element layer with a thickness of 90 nm.

[0059] The method for preparing the infrared camouflage fabric in Example 3 is as follows:

[0060] S1: Provide PET base fabric as the base layer and pre-treat the nonwoven fabric. The pre-treatment includes cleaning, drying, and smoothing. The cleaning process is as follows: place the flexible base fabric in pure water or organic solvent and ultrasonically clean it for 15 minutes at room temperature. The drying process is as follows: place the cleaned flexible base fabric in a dryer and dry it for 10 minutes at a temperature of 60℃ and a wind speed of 6m / s. The smoothing process is as follows: use a known calendering process to physically calender the dried flexible base fabric with pressure rollers. The pressure roller temperature is 100℃, the pressure roller pressure is 1 ton, and the pressure roller speed (outermost linear speed) is 2m / min.

[0061] S2: Deposit an infrared stealth layer on the substrate, i.e., prepare an Al monolayer on the substrate using magnetron sputtering at a vacuum level of 10. -3 Pa, the target material is elemental Al target material, the process gas is Ar, the gas flow rate is 90 sccm, the flow rate is 2 m / min, the magnetron sputtering power is 180 W, and the magnetron sputtering time is 10 min;

[0062] S3: Prepare a camouflage layer on the infrared stealth layer. The preparation process is as follows: provide a mask, spray PE solution coating onto the mask, change the thickness of the block by controlling the number of sprays, and obtain the camouflage layer after the coating dries. Its thermal imaging is a random distribution of blue, green, yellow, orange and red.

[0063] A section was cut from the infrared camouflage fabric obtained in Example 3, the camouflage layer of which contained 3*3 PE-coated blocks. Thermal images of the nine blocks in Example 3 using an infrared thermometer are shown. Block 1 has a thickness of 37 μm, an average emissivity of 0.35 in the 3 μm-20 μm band, an apparent temperature of 33.7 °C, and appears green in the infrared thermometer. Block 2 has a thickness of 171 μm, an average emissivity of 0.68 in the 3 μm-20 μm band, an apparent temperature of 36.4 °C, and appears red in the infrared thermometer. Block 3 has a thickness of 10 μm, an average emissivity of 0.22 in the 3 μm-20 μm band, an apparent temperature of 32.0 °C, and appears blue in the infrared thermometer.

Claims

1. A method for preparing an infrared camouflage fabric, characterized in that, The infrared camouflage fabric comprises, from the inside out, a base layer, an infrared stealth layer, and a camouflage layer. The base layer is a flexible fabric. The infrared emissivity of the infrared stealth layer is ≤0.2, and its thickness is 5nm-2μm. The camouflage layer is made of polyethylene or hydrogenated styrene-butadiene block copolymer. The camouflage layer consists of randomly distributed blocks of varying thicknesses, with smooth transitions between blocks of different thicknesses. The thickness of the camouflage layer ranges from 10μm to 180μm, and its average emissivity ranges from 0.2 to 0.

7. The method for preparing the infrared camouflage fabric is also described. Includes the following steps: S1: Provide a flexible substrate as a base layer and pre-treat the flexible substrate; in step S1, the pre-treatment includes cleaning, drying, and smoothing; the cleaning process is as follows: place the flexible substrate in pure water or an organic solvent and ultrasonically clean it at room temperature for 15-30 minutes; the drying process is as follows: place the cleaned flexible substrate in a dryer and dry it for 10-20 minutes at a temperature of 60℃-80℃ and a wind speed of 6m / s-8m / s; the smoothing process is as follows: use a calendering process to physically calender the dried flexible substrate using pressure rollers, wherein the pressure roller temperature is 80℃-120℃, the pressure roller pressure is 1 ton-3 tons, and the pressure roller speed is 1m / min-3m / min; S2: Deposit an infrared stealth layer on the base layer; in step S2, the deposition includes physical vapor deposition or chemical vapor deposition, the physical vapor deposition includes sputtering, electron beam evaporation, or thermal evaporation, and the chemical vapor deposition includes atomic layer deposition or plasma-enhanced chemical vapor deposition. S3: Prepare a camouflage layer on the infrared stealth layer; In step S3, the process of preparing a camouflage layer on the infrared stealth layer is as follows: provide a mask, spray PE solution coating or SEBS solution coating onto the mask, change the thickness of the block by controlling the number of sprays, and obtain the camouflage layer after drying. Its thermal imaging is a random distribution of blue, green, yellow, orange and red.

2. The method for preparing an infrared camouflage fabric according to claim 1, characterized in that, The infrared stealth layer can be a single-layer or multi-layer structure.

3. The method for preparing an infrared camouflage fabric according to claim 2, characterized in that, The infrared stealth layer is a single-layer structure with a thickness of 10nm-100nm, and the infrared stealth layer is a single metal layer or an alloy layer.

4. The method for preparing an infrared camouflage fabric according to claim 2, characterized in that, The infrared stealth layer is a multi-layer structure, which is a stacked structure consisting of alternating layers of metal elemental layer and semiconductor layer.

5. A method for preparing an infrared camouflage fabric according to claim 3 or 4, characterized in that, The metal elemental layer is any one of Au, Ag, Cu, and Al.

6. The method for preparing an infrared camouflage fabric according to claim 4, characterized in that, The semiconductor layer is a semiconductor elemental layer or a semiconductor compound layer. The semiconductor elemental layer is either a Si elemental layer or a Ge elemental layer, and the semiconductor compound layer is either a ZnS compound layer, a ZnSe compound layer, or a KCl compound layer.

7. The method for preparing an infrared camouflage fabric according to claim 4, characterized in that, The infrared stealth layer comprises a first Ag elemental layer, a first Si elemental layer, a second Ag elemental layer, and a second Si elemental layer arranged sequentially from the base layer. The thickness of the first Ag elemental layer is 40nm-100nm, the thickness of the first Si elemental layer is 700nm-800nm, the thickness of the second Ag elemental layer is 8nm-30nm, and the thickness of the second Si elemental layer is 280nm-420nm.

8. The method for preparing an infrared camouflage fabric according to claim 1, characterized in that, The flexible base fabric is a PET base fabric or a non-woven fabric, and the thickness of the base layer is 100nm-100μm.

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