DC-DC converter and chip
By introducing a charge pump boost circuit into the BUCK-type DC-DC converter, a second boost voltage greater than the first boost voltage is generated, optimizing the area design of the bootstrap capacitor and reducing chip cost.
CN117394687BActive Publication Date: 2026-06-30SG MICRO CORP
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Patent Information
- Application Number
- CN202311595991.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-11-27
- Publication Date
- 2026-06-30
- Estimated Expiration
- 2043-11-27
AI Technical Summary
Technical Problem
The bootstrap capacitor in a BUCK-type DC-DC converter has a large capacitance and area, resulting in higher chip cost.
Method used
A charge pump boost circuit is introduced to generate a second boost voltage. Through the high-side drive circuit and the charge pump boost circuit, a second high-side drive voltage greater than the first boost voltage is output to the control electrode of the high-side power transistor, thus optimizing the area design of the bootstrap capacitor.
Benefits of technology
The area of the bootstrap capacitor was reduced, thereby reducing the chip cost and solving the problem of high cost caused by the large size of the bootstrap capacitor.
✦ Generated by Eureka AI based on patent content.
Abstract
This disclosure provides a DC-DC converter and chip, wherein the DC-DC converter includes a bootstrap boost circuit, a charge pump boost circuit, a high-side drive circuit, a low-side drive circuit, a high-side power transistor, and a low-side power transistor. The bootstrap boost circuit provides a first boost voltage to the high-side drive circuit. The high-side drive circuit outputs a first high-side drive voltage to the control electrode of the high-side power transistor based on the first boost voltage. The charge pump boost circuit generates a second boost voltage through a charge pump and outputs a second high-side drive voltage to the control electrode of the high-side power transistor based on the second boost voltage. The second boost voltage is greater than the first boost voltage. The first electrode of the high-side power transistor is coupled to the input voltage terminal, and the second electrode is coupled to the first electrode of the low-side power transistor via a switching node. The high-side power transistor is turned on or off according to the first and second high-side drive voltages. One end of the bootstrap boost circuit and one end of the charge pump boost circuit are respectively coupled to the switching node.
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