Air intake assembly, air intake device and semiconductor process chamber

Abstract

The present invention provides an air intake component, an air intake device and a semiconductor process chamber, wherein the air intake component includes an air intake portion, a gas distribution layer and an annular flow equalization chamber; the air intake portion has an air intake channel, and the gas distribution layer is connected to the air intake channel; the gas distribution layer includes at least one distribution chamber arranged around the air intake portion, and the distribution chamber closest to the air intake portion is a first distribution chamber; the annular flow equalization chamber is arranged around the air intake portion and is located in the first distribution chamber, and the annular flow equalization chamber is provided with a plurality of flow equalization holes on the side facing the air intake portion, and the plurality of flow equalization holes are distributed around the air intake portion; the air intake channel is connected with the annular flow equalization chamber, and the annular flow equalization chamber is connected with the first distribution chamber through the plurality of flow equalization holes. The air intake component of the present invention is provided with an annular flow equalization chamber around the air intake portion and a plurality of flow equalization holes on the side facing the air intake portion of the annular flow equalization chamber, so that the process gas can be evenly distributed in the first distribution chamber through the annular flow equalization chamber, thereby improving the initial uniformity of the process gas and further improving the flow equalization effect of the flow equalization component.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to an air intake component, an air intake device and a semiconductor process chamber. Background Art

[0002] Metal-organic Chemical Vapor Deposition (MOCVD) equipment is mainly used to grow compound semiconductor thin film materials. Most MOCVD equipment can place multiple wafers on a graphite base for epitaxial growth at the same time, depending on the size of the wafer. For semiconductor process chambers used for metal-organic chemical vapor deposition, the air intake device is particularly important.

[0003] The gas inlet device is mainly used to introduce external process gas into the semiconductor process chamber. In addition, in order to ensure the quality of semiconductor products, the process gas needs to be evenly distributed in the semiconductor process chamber. Therefore, the gas inlet device usually includes a gas inlet component, through which the process gas is evenly ejected in the circumferential direction, and the process gas ejected in the circumferential direction is as equal as possible in speed and flow rate, so that the process gas is evenly distributed in the semiconductor process chamber.

[0004] However, in some air intake components, due to the need to take various factors into consideration, the internal air intake structure makes it impossible for the process gas to be fully and evenly distributed in the air intake component, which greatly reduces the flow distribution effect of the air intake component on the process gas, and the process gas cannot be evenly distributed in the semiconductor process chamber, thereby failing to meet the process requirements. Summary of the invention

[0005] The present invention aims to at least solve the problem in the prior art that the air intake assembly has a poor diversion effect on process gas, and proposes an air intake assembly, an air intake device and a semiconductor process chamber.

[0006] In order to achieve the purpose of the present invention, an air intake component is provided, comprising: an air intake part and a gas distribution layer arranged around the air intake part; wherein the air intake part comprises a columnar body and at least one air intake channel located in the columnar body, and the gas distribution layer is connected to one of the air intake channels; the gas distribution layer comprises at least one distribution chamber arranged around the columnar body, and the outer peripheral wall of each distribution chamber is provided with a plurality of diversion holes; wherein the distribution chamber closest to the air intake part is the first distribution chamber; the air intake component also comprises a connecting pipe and an annular flow equalizing chamber arranged around the columnar body and located in the first distribution chamber, the annular flow equalizing chamber is spaced apart from the columnar body, and the annular flow equalizing chamber is provided with a plurality of flow equalizing holes on the side facing the columnar body, and the plurality of flow equalizing holes are distributed around the columnar body; the air intake channel is connected with the annular flow equalizing chamber through the connecting pipe, and the annular flow equalizing chamber is connected with the first distribution chamber through the plurality of flow equalizing holes.

[0007] Optionally, the annular flow equalizing chamber is formed by an annular tube arranged around the columnar body, the interior of the annular tube is the annular flow equalizing chamber, the flow equalizing holes are arranged at intervals on the tube wall of the annular tube, and the connecting tube is connected to the annular tube.

[0008] Optionally, the position where the connecting tube is connected to the annular tube is taken as a reference position; on the tube wall of the annular tube, the farther the flow balancing hole is from the reference position, the larger the aperture of the flow balancing hole is; and / or, on the tube wall of the annular tube, the intervals between adjacent flow balancing holes gradually decrease from the reference position in a direction away from the reference position.

[0009] Optionally, a guide portion is provided on the outer peripheral wall of the columnar body, the gas outlet direction of the flow balancing hole is toward the guide portion, and the guide portion is used to guide the process gas ejected from the flow balancing hole to flow toward the outer peripheral wall of the first distribution chamber.

[0010] Optionally, the guide portion is an annular groove arranged along the outer peripheral wall of the columnar body, the annular flow equalizing cavity is located at the notch position of the annular groove, and the gas outlet direction of the flow equalizing hole is toward the bottom of the annular groove.

[0011] Optionally, the spacing between the groove walls of the annular groove gradually increases in a direction from the groove bottom to the groove opening of the annular groove to guide the diffusion of the process gas.

[0012] Optionally, in an axial cross section of the annular groove, the interior of the annular groove is a C-shaped structure.

[0013] Optionally, the annular tube is fixedly connected to the columnar body via the connecting tube.

[0014] Optionally, there are multiple air intake channels, and the multiple air intake channels include an air intake sub-channel and multiple auxiliary sub-channels. The air intake sub-channel and the multiple auxiliary sub-channels are circumferentially spaced apart in the columnar body, and a flow channel for communicating with the annular flow equalizing cavity is provided on the inner wall of the air intake sub-channel.

[0015] According to a second aspect of the present invention, an air intake device is also disclosed, comprising a plurality of the above-mentioned air intake assemblies, wherein the plurality of the air intake assemblies are stacked in sequence from top to bottom.

[0016] Optionally, the columnar bodies of all the air intake assemblies are fixedly connected to each other, and a plurality of the air intake channels are arranged in each of the columnar bodies, and the plurality of the air intake channels in each columnar body are arranged and connected with the plurality of the air intake channels in other columnar bodies in a one-to-one correspondence, and the corresponding air intake channels in all the columnar bodies are connected in sequence from top to bottom; the plurality of air intake channels include an air intake sub-channel and a plurality of auxiliary sub-channels, and the air intake sub-channels and the plurality of auxiliary sub-channels are circumferentially spaced in the columnar body, and a flow channel for connecting with the annular flow equalizing cavity is arranged on the inner wall of the air intake sub-channel, wherein the air intake sub-channel in each columnar body and the air intake sub-channels in other columnar bodies are staggered with each other in a direction surrounding the columnar body.

[0017] Optionally, the number of the air intake channels is the same as the number of the air intake components.

[0018] According to a third aspect of the present invention, a semiconductor process chamber is also disclosed, comprising: a chamber body and the above-mentioned air intake device.

[0019] Compared with the prior art, since an annular flow equalization chamber is provided, the process gas can be preliminarily equalized through the annular flow equalization chamber, so that the process gas is ejected from multiple positions surrounding the columnar body. Since the equalization hole is located on the side of the annular flow equalization chamber facing the columnar body and is arranged around the columnar body, the ejection direction of the process gas is toward the columnar body, rather than directly toward the outer peripheral wall of the first distribution chamber, thereby not only buffering the flow rate of the process gas, but also extending the stroke of the process gas, so that the process gas has more time and space to diffuse; in addition, the process gas can further improve the diffusion effect after colliding with the columnar body, so that the process gas can be fully diffused in the first distribution chamber, that is, by setting the annular flow equalization chamber, the process gas can be more evenly distributed in the first distribution chamber, so that the process gas can be more fully diverted when passing through each distribution chamber, thereby improving the uniformity of the final process gas distribution and meeting the process requirements.

[0020] The air intake component of the present invention arranges an annular flow equalizing cavity around the air intake portion and arranges a plurality of flow equalizing holes on the side of the annular flow equalizing cavity facing the air intake portion. The annular flow equalizing cavity can be used to evenly distribute the process gas in the first distribution cavity, thereby improving the initial uniformity of the process gas and thus improving the flow equalizing effect of the flow equalizing component. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a structural schematic diagram of a semiconductor process chamber in the prior art;

[0022] Figure 2 It is a structural schematic diagram of an air intake device in the prior art;

[0023] Figure 3 It is a structural schematic diagram of an air intake assembly according to an embodiment of the present invention;

[0024] Figure 4 for Figure 3 AA section view of the air intake assembly;

[0025] Figure 5 It is a schematic structural diagram of a ring-shaped tube of an air intake assembly according to an embodiment of the present invention;

[0026] Figure 6 is a three-dimensional diagram of an air intake assembly according to an embodiment of the present invention;

[0027] Figure 7 is a schematic structural diagram of an air intake device according to an embodiment of the present invention;

[0028] Figure 8 An exploded view of an air intake device according to an embodiment of the present invention;

[0029] Fig. 9 A schematic structural diagram of a semiconductor process chamber according to an embodiment of the present invention;

[0030] List of reference numerals:

[0031] 10. Air inlet part; 11. Columnar body; 12. Air inlet channel; 121. Air inlet sub-channel; 122. Auxiliary sub-channel; 123. Flow channel; 13. Flow guide; 14. Connecting hole; 20. Gas distribution layer; 21. Distribution chamber; 211. First distribution chamber; 212. Second distribution chamber; 213. Third distribution chamber; 22. Diverter hole; 231. First diverter plate; 232. Second diverter plate; 233. Third diverter plate; 24. Support plate; 30. Connecting tube; 40. Annular tube; 41. Annular equalizing chamber; 42. Flow equalizing hole; 50. Base; 60. Connecting rod; 70. Chamber body. DETAILED DESCRIPTION

[0032] In order to enable those skilled in the art to better understand the technical solution of the present invention, the air intake assembly, the air intake device and the semiconductor process chamber provided by the present invention are described in detail below with reference to the accompanying drawings.

[0033] Metal-organic Chemical Vapor Deposition (MOCVD) equipment is mainly used to grow compound semiconductor thin film materials. Most MOCVD equipment can place multiple wafers on a graphite pedestal for epitaxial growth at the same time, depending on the size of the wafer. For semiconductor process chambers used for metal-organic chemical vapor deposition, the air intake device is particularly important.

[0034] Commonly used air intake devices include horizontal spray air intake devices, which are mainly used to introduce external process gases into the semiconductor process chamber. In addition, in order to ensure the quality of semiconductor products, the process gas needs to be evenly distributed in the semiconductor process chamber. Therefore, the air intake device usually includes an air intake component, through which the process gas is sprayed horizontally and evenly in the circumferential direction, and the process gas sprayed in the circumferential direction is as equal as possible in speed and flow rate, so that the process gas is evenly distributed in the semiconductor process chamber.

[0035] In addition, usually, it is necessary to introduce multiple process gases into the semiconductor process chamber. Therefore, multiple pipelines are required to transport the process gases, and the gas requirements in each pipeline can achieve separate control of the intake pressure and flow rate. Therefore, multiple intake components are required in each intake device to separately divert each pipeline, so that each process gas can enter the semiconductor process chamber evenly. In addition, in order to avoid early contact between different process gases before reaching the semiconductor process chamber, it is required that the process gases in each intake component cannot cross-flow with each other.

[0036] like Figure 1 As shown, a semiconductor process chamber is disclosed, comprising: a chamber body 1 and an air intake device 2 arranged in the chamber body 1. The air intake device 2 comprises a plurality of stacked air intake components 3, such as Figure 2 As shown, each air intake assembly 3 includes: a base plate 4, an air intake portion 5, a third annular flow balancing plate 6, a second annular flow balancing plate 7 and a first annular flow balancing plate 8.

[0037] The air inlet portion 5 is fixedly connected to the substrate 4 . An air inlet port 9 is provided on the air inlet portion 5 . The process gas enters into the air inlet component 3 through the air inlet port 9 .

[0038] The first annular flow equalizing plate 8 is arranged around the air inlet 5, the third annular flow equalizing plate 6 is connected to the outer periphery of the substrate 4, and the second annular flow equalizing plate 7 is arranged between the third annular flow equalizing plate 6 and the first annular flow equalizing plate 8. A first flow equalizing channel is formed between the first annular flow equalizing plate 8 and the air inlet 5, a second flow equalizing channel is formed between the first annular flow equalizing plate 8 and the second annular flow equalizing plate 7, and a third flow equalizing channel is formed between the second annular flow equalizing plate 7 and the third annular flow equalizing plate 6. Flow equalizing holes are evenly distributed on the first annular flow equalizing plate 8, the second annular flow equalizing plate 7 and the third annular flow equalizing plate 6, and the first flow equalizing channel, the second flow equalizing channel and the third flow equalizing channel are connected in sequence through the flow equalizing holes, and the air inlet 9 is connected to the first flow equalizing channel.

[0039] When in use, after the process gas enters the first flow equalizing channel from the air inlet 9, the process gas is diverted to the second flow equalizing channel and the third flow equalizing channel through the flow equalizing holes in turn, and finally ejected into the chamber body 1 from the flow equalizing holes on the third annular flow equalizing plate 6.

[0040] However, since the inlet 9 of the process gas is located on one side of the air inlet 5, and the outlet direction is directly toward the first annular equalizing plate 8, the speed of the ejected process gas corresponding to the inlet 9 will be greater than that of other places. This results in that although a part of the process gas will diffuse along the first equalizing channel first and then enter the second equalizing channel, a part of the process gas will still directly pass through the equalizing hole near the inlet 9 to enter the second equalizing channel, thereby making the process gas flow and flow velocity in the second equalizing channel uneven, and ultimately causing the process gas ejected from the air intake assembly to be unevenly distributed in the circumferential direction. In other words, in the prior art, due to the single air inlet 9 and the relatively biased position, the initial state of the process gas entering the air intake assembly 3 is too concentrated, which seriously affects the equalizing effect of the subsequent annular equalizing plate and the equalizing channel, and cannot be fully diverted. Therefore, the equalizing effect of the air intake assembly 3 on the process gas is greatly reduced, so that the process gas cannot be evenly distributed in the semiconductor process chamber, and cannot meet the process requirements.

[0041] In order to solve the above problems, Figure 3 and Figure 4 As shown, an embodiment of the present invention discloses an air intake assembly, comprising: an air intake portion 10 , a gas distribution layer 20 , a connecting pipe 30 and an annular flow equalizing chamber 41 .

[0042] like Figure 3 As shown, the air inlet portion 10 includes a columnar body 11 and at least one air inlet channel 12 located in the columnar body 11 , and the gas distribution layer 20 is connected to one of the air inlet channels 12 .

[0043] The gas distribution layer 20 is arranged around the air inlet part 10, and the gas distribution layer 20 includes at least one distribution cavity 21 arranged around the columnar body 11, and the outer peripheral wall of each distribution cavity 21 is provided with a plurality of diversion holes 22; among which the distribution cavity 21 closest to the air inlet part 10 is the first distribution cavity 211.

[0044] The annular flow equalizing chamber 41 is located in the first distribution chamber 211, and the annular flow equalizing chamber 41 is arranged around the columnar body 11. The annular flow equalizing chamber 41 is spaced apart from the columnar body 11, and a plurality of flow equalizing holes 42 are provided on the side of the annular flow equalizing chamber 41 facing the columnar body 11, and the plurality of flow equalizing holes 42 are distributed around the columnar body 11.

[0045] The air inlet passage 12 is communicated with the annular flow equalizing chamber 41 through the connecting pipe 30 , and the annular flow equalizing chamber 41 is communicated with the first distribution chamber 211 through a plurality of flow equalizing holes 42 .

[0046] In this embodiment, since the air inlet channel 12 is connected to the annular flow equalizing chamber 41 through the connecting pipe 30, a plurality of flow equalizing holes 42 distributed around the columnar body 11 and connected to the first distribution chamber 211 are also provided on the inner wall of the annular flow equalizing chamber 41, and each flow equalizing hole 42 is located on the side of the annular flow equalizing chamber 41 facing the columnar body 11. When the air inlet assembly is used, after the process gas in the air inlet channel 12 enters the annular flow equalizing chamber 41 through the connecting pipe 30, it will first diffuse along the inner wall of the annular flow equalizing chamber 41, and then spray out from the flow equalizing holes 42 toward the columnar body 11. The process gas sprayed from the flow equalizing holes 42 will continue to flow toward the columnar body 11, diffuse to the surroundings after hitting the columnar body 11, and finally gradually expand to the outer peripheral wall of the first distribution chamber 211, and be diverted through the diversion hole 22.

[0047] Compared with the prior art, since the annular flow equalization chamber 41 is provided, the process gas can be preliminarily equalized through the annular flow equalization chamber 41, so that the process gas is ejected from multiple positions around the columnar body 11. Since the flow equalization hole 42 is located on the side of the annular flow equalization chamber 41 facing the columnar body 11 and is provided around the columnar body 11, the ejection direction of the process gas is toward the columnar body 11, rather than directly toward the outer peripheral wall of the first distribution chamber 211, thereby not only buffering the flow rate of the process gas, but also extending the stroke of the process gas, so that the process gas has more time and space to diffuse; in addition, the process gas can also diffuse to the surroundings after colliding with the columnar body 11, further improving the diffusion effect, so that the process gas can be fully and evenly diffused in the first distribution chamber 211, that is, by providing the annular flow equalization chamber 41, the process gas can be more evenly distributed in the first distribution chamber 211, so that the process gas enters the next distribution chamber 21 uniformly in the circumferential direction, and then more fully diverted, improving the uniformity of the final process gas distribution, and meeting the process requirements.

[0048] The air intake assembly of the present invention arranges an annular flow equalizing chamber 41 around the air intake portion 10 and arranges a plurality of flow equalizing holes 42 on the side of the annular flow equalizing chamber 41 facing the air intake portion 10. The annular flow equalizing chamber 41 can be used to evenly distribute the process gas in the first distribution chamber 211, thereby improving the initial uniformity of the process gas distribution and thus improving the final flow equalizing effect of the air intake assembly.

[0049] For example, the gas distribution layer 20 includes three distribution chambers 21. Figure 4 As shown, the gas distribution layer 20 may include: a support plate 24, a first diverter plate 231, a second diverter plate 232, and a third diverter plate 233. The support plate 24 is circular, the columnar body 11 is fixedly connected to the center of the support plate 24, and the first diverter plate 231, the second diverter plate 232, and the third diverter plate 233 are all fixedly connected to the support plate 24. The first diverter plate 231, the second diverter plate 232, and the third diverter plate 233 are all annular diverter plates, and the first diverter plate 231, the second diverter plate 232, and the third diverter plate 233 are arranged around the columnar body 11 from the inside to the outside, and the third diverter plate 233 is arranged around the outer peripheral side of the support plate 24.

[0050] See also Figure 4 and Figure 6 The first distribution chamber 211 is formed between the first manifold plate 231 and the columnar body 11, the second distribution chamber 212 is formed between the first manifold plate 231 and the second manifold plate 232, and the third distribution chamber 213 is formed between the second manifold plate 232 and the third manifold plate 233. The first manifold plate 231, the second manifold plate 232 and the third manifold plate 233 are all provided with evenly distributed manifold holes 22, and the first distribution chamber 211 and the second distribution chamber 212, the second distribution chamber 212 and the third distribution chamber 213, and the third distribution chamber 213 and the semiconductor process chamber outside the gas distribution layer 20 are connected through the manifold holes 22 on the corresponding annular manifold plates.

[0051] When in use, the process gas diffuses from the first distribution chamber 211 to the second distribution chamber 212 and the third distribution chamber 213 in sequence, and finally diffuses to the semiconductor process chamber outside the gas distribution layer 20. Since the diverter holes 22 on each annular diverter plate are evenly distributed, the process gas will be more dispersed each time it passes through a layer of annular diverter plates, until it passes through the outermost third diverter plate 233 and enters the interior of the semiconductor process chamber, and the diffusion degree of the process gas reaches the maximum, thereby achieving uniform distribution inside the semiconductor process chamber.

[0052] like Figure 5As shown, the annular flow equalization chamber 41 is formed by an annular tube 40 surrounding the columnar body 11, the interior of the annular tube 40 is an annular flow equalization chamber 41, and the flow equalization holes 42 are arranged at intervals on the tube wall of the annular tube 40; the first end of the connecting tube 30 is connected to the annular tube 40, and the second end is connected to the air inlet channel 12. The air inlet channel 12 and the annular flow equalization chamber 41 are connected through the connecting tube 30. After the process gas enters the annular flow equalization chamber 41 along the connecting tube 30, it is first divided into two parts, flowing along the annular flow equalization chamber 41 respectively, and enters the first distribution chamber 211 through the flow equalization holes 42. By setting the connecting tube 30 and the annular tube 40, the gas can be initially divided when entering the annular tube 40, and then a secondary division can be performed through the flow equalization holes 42. The two divisions can make the process gas distribution more uniform, and improve the uniformity of the process gas entering the first distribution chamber 211.

[0053] like Figure 5 As shown, the position where the connecting tube 30 and the annular tube 40 are connected is taken as the reference position; on the tube wall of the annular tube 40, the intervals between adjacent flow equalizing holes 42 gradually decrease from the reference position to a direction away from the reference position.

[0054] Specifically, if Figure 5 As shown, point A is the connection position between the connecting tube 30 and the annular tube 40, that is, the reference position. Figure 5 The point B position in the figure is the position on the annular tube 40 that is farthest from the point A position, that is, the position that is farthest from the reference position; in the direction surrounding the columnar body 11, from the point A position to the point B position, the interval of the equalizing holes 42 gradually decreases. In other words, at the position on the annular tube 40 close to the connecting tube 30, the equalizing holes 42 are arranged relatively sparsely, and at the position on the annular tube 40 far from the connecting tube 30, the equalizing holes 42 are arranged relatively densely. This is because, at the point A position, the flow velocity of the process gas is relatively large, so the flow velocity of the process gas ejected from the equalizing holes 42 near the point A position is relatively large, and as the process gas flows along the annular equalizing cavity 41, the flow velocity of the process gas becomes slower and slower, and the pressure gradually decreases, so the flow velocity of the process gas ejected from the equalizing holes 42 near the point B position is relatively slow. By increasing the intervals between the flow balancing holes 42 near point A to reduce the number of flow balancing holes 42 in this area, and decreasing the intervals between the flow balancing holes 42 near point B to increase the number of flow balancing holes 42 in this area, the difference in the total flow rate of the gas ejected per unit circumferential length caused by different flow velocities can be offset, so that the process gas in each area in the direction surrounding the columnar body 11 can be as uniform as possible, thereby improving the uniformity of the process gas distribution in each area in the circumferential direction of the columnar body 11.

[0055] It should be noted that, in the present embodiment, the position of point B is the position farthest from the reference position, but this is not restrictive, and the position of point B only needs to be near the point farthest from the reference position.

[0056] It should also be noted that, although in the present embodiment, the intervals between adjacent equalizing holes 42 on the wall of the annular tube 40 gradually decrease from the reference position toward the direction away from the reference position, this is not restrictive. In some other embodiments not shown in the figure, according to the process gas flow formula: Q=SV, wherein Q is the gas flow, S is the hole area, and V is the gas flow rate, which is related to the gas pressure at the pores, that is, the greater the gas pressure, the faster the gas flow rate V; the intervals between the equalizing holes can also be set to be the same, and by adjusting the aperture of the equalizing holes 42, the farther the equalizing holes 42 on the wall of the annular tube 40 are from the reference position, the larger the aperture of the equalizing holes 42; that is, in the direction surrounding the columnar body 11, the closer the aperture of the equalizing holes 42 is to the reference position, the smaller the aperture, and the farther the aperture of the equalizing holes 42 is from the reference position, the larger the aperture. Its essential principle is the same as that of the above-mentioned embodiment, which is to ensure that the total flow rate of gas ejected within a unit circumferential length is equal, that is, the aperture of the flow-equalizing hole 42 close to the reference position is smaller, and the gas pressure is higher; while the aperture of the flow-equalizing hole 42 far from the reference position is larger, and the gas pressure is lower. According to the process gas flow formula, the difference caused by different pore flow rates can be offset, so that the process gas in each area in the direction surrounding the columnar body 11 is as uniform as possible, thereby improving the uniformity of the process gas distribution in each area in the circumferential direction of the columnar body 11.

[0057] In addition, it can be understood that in order to ensure the uniformity of gas distribution, all the flow holes 42 are distributed in a mirror-symmetrical manner, and the symmetry line is Figure 5 The line connecting the position of point A and the position of point B in the figure intersects the axis of the columnar body 11.

[0058] In this embodiment, the inner diameter of the connecting pipe 30 can be set to 2 mm to 40 mm, preferably 10 mm, and the aperture range of the flow balancing hole 42 is 0.5 mm to 20 mm.

[0059] like Figure 5 As shown, the outlet direction of the flow-equalizing hole 42 is toward the outer peripheral wall of the columnar body 11. By setting the outlet direction of the flow-equalizing hole 42 toward the outer peripheral wall of the columnar body 11, the process gas first flows toward the outer peripheral wall of the gas inlet 10, and then returns to the first diverter plate 231 for diversion, which fully increases the stroke of the process gas and provides more buffer time and space for the uniformization of the gas flow field, so that the circumferential distribution of the process gas is more uniform when entering the semiconductor process chamber.

[0060] like Figure 4As shown, a guide portion 13 is provided on the outer peripheral wall of the columnar body 11, and the gas outlet direction of the flow balancing hole 42 faces the guide portion 13. The guide portion 13 is used to guide the process gas ejected from the flow balancing hole 42 to flow toward the outer peripheral wall of the first distribution chamber 211, that is, the first diverter plate 231. By providing the guide portion 13, the process gas can be guided to flow toward the first diverter plate 231 through the guide portion 13, thereby improving the gas diversion efficiency.

[0061] It should be noted that, in this embodiment, the flow guide 13 is an annular groove arranged along the outer peripheral wall of the columnar body 11, the annular tube 40 is located at the notch position of the annular groove, and the gas outlet direction of the flow equalizing hole 42 is toward the bottom of the annular groove. In the direction from the bottom of the annular groove to the notch, the groove wall spacing of the annular groove gradually increases to guide the diffusion of the process gas. Figure 4 As shown, on the axial cross section of the annular groove, the interior of the annular groove is in a C-shaped structure. By providing the annular groove, the process gas blown out of the flow-equalizing hole 42 is guided and reflected by the annular groove, which can not only increase the airflow stroke and play a buffering and uniform gas effect, but also change the focusing of the process gas flow rate, which is more conducive to diffusion. In addition, the annular groove with a C-shaped structure can make the reflected gas approach the laminar effect, thereby improving the uniformity of the circumferential distribution of the process gas.

[0062] like Figure 5 As shown, in this embodiment, the connecting pipe 30 and the annular pipe 40 are both rigid, and the annular pipe 40 is fixedly connected to the air inlet 10 through the connecting pipe 30. By using the connecting pipe 30 to fix the air inlet 10 with the annular pipe 40, it is not necessary to add other structures to support the annular pipe 40, thereby reducing manufacturing costs and improving assembly efficiency. At the same time, it is also possible to avoid interference with the process gas inside the air inlet assembly and improve the flow balancing effect.

[0063] like Figure 6 As shown, there are multiple inlet channels 12, and the multiple inlet channels 12 include an inlet sub-channel 121 and multiple auxiliary sub-channels 122. The inlet sub-channel 121 and the multiple auxiliary sub-channels 122 are circumferentially spaced and distributed in the columnar body 11. The inner wall of the inlet sub-channel 121 is provided with a flow channel 123 for communicating with the annular tube 40. In this embodiment, by providing multiple auxiliary sub-channels 122, an inlet structure can be formed in conjunction with other multiple inlet components, thereby facilitating the realization of separate and equal flow of process gases.

[0064] like Figure 4As shown, the columnar body 11 has a first end and a second end in the axial direction, the first end is connected to the support plate 24, and the second end is a free end. The air inlet channel 12 extends from the first end of the air inlet portion 10 to the second end, and an opening is provided on the support plate 24 so as to be connected to the air inlet channels 12 of other air inlet portions 10. A connecting hole 14 is also provided at the center of the columnar body 11, and the connecting hole 14 runs from the first end of the columnar body 11 to the second end, and a plurality of air inlet channels 12 are distributed around the connecting hole 14. In this way, the structure of each air inlet assembly is exactly the same. When using multiple air inlet assemblies, the multiple air inlet assemblies can be connected and fixed through the connecting hole 14, so that the same air inlet assemblies can cooperate with each other, and only the angle of each air inlet assembly needs to be adjusted, which greatly improves the versatility and installation convenience of the air inlet assembly.

[0065] Specifically, according to the second aspect of the present invention, Figure 7 As shown, an air intake device is also disclosed, comprising a plurality of the above-mentioned air intake assemblies, wherein the plurality of air intake assemblies are stacked in sequence from top to bottom.

[0066] like Figure 7 and Figure 8 As shown, the gas inlet device is provided with a base 50, a connecting rod 60 is provided on the base 50, a plurality of gas distribution layers 20 are provided on the base 50, and the plurality of gas distribution layers 20 are stacked along the axial direction of the columnar body 11. The connecting rod 60 is coaxial with the columnar body 11, and the connecting rod 60 is simultaneously penetrated in the connecting holes 14 of the plurality of gas distribution layers 20, and the columnar bodies 11 of all the gas inlet components are fixedly connected by the connecting rod 60. Among them, the first end of the connecting rod 60 is fixedly connected to the base 50, and the second end is provided with an external thread for connecting to the semiconductor process chamber, so as to fix the gas inlet device in the semiconductor process chamber.

[0067] A plurality of air inlet channels 12 are disposed in each columnar body 11 . The plurality of air inlet channels 12 in each columnar body 11 are disposed in one-to-one correspondence with and connected to the plurality of air inlet channels 12 in other columnar bodies 11 . The corresponding air inlet channels 12 in all columnar bodies 11 are connected in sequence from top to bottom.

[0068] The plurality of air inlet channels 12 include an air inlet sub-channel 121 and a plurality of auxiliary sub-channels 122, the air inlet sub-channel 121 and the plurality of auxiliary sub-channels 122 are circumferentially spaced apart and distributed in the columnar body 11, and a flow passage 123 for communicating with the annular flow equalizing cavity 41 is provided on the inner wall of the air inlet sub-channel 121, wherein Figure 8As shown, the air inlet sub-channels 121 in each columnar body 11 and the air inlet sub-channels 121 in other columnar bodies 11 are staggered in the direction around the columnar body 11. That is to say, the air inlet components of the air inlet device of the present invention have the same structure. Therefore, during manufacturing, only the same mold is needed to achieve mass production, which can reduce the production of finished products and improve the versatility of the product. It can be understood that in this embodiment, the stacked air inlet components are sealed to prevent leakage or cross-talk of process gas.

[0069] like Fig. 9 As shown, the present invention further discloses a semiconductor process chamber, comprising: a chamber body 70 and the above-mentioned air intake device.

[0070] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. An air intake assembly, characterized in that: include: An air inlet (10) and a gas distribution layer (20) arranged around the air inlet (10); wherein: The air inlet portion (10) comprises a columnar body (11) and at least one air inlet channel (12) located in the columnar body (11), and the gas distribution layer (20) is connected to one of the air inlet channels (12); The gas distribution layer (20) comprises at least one distribution cavity (21) arranged around the columnar body (11), and the outer peripheral wall of each distribution cavity (21) is provided with a plurality of flow diversion holes (22); wherein the distribution cavity (21) closest to the gas inlet portion (10) is a first distribution cavity (211); The air intake assembly further comprises a connecting pipe (30) and an annular flow balancing chamber (41) arranged around the columnar body (11) and located in the first distribution chamber (211); the annular flow balancing chamber (41) is arranged at a distance from the columnar body (11); and a plurality of flow balancing holes (42) are arranged on a side of the annular flow balancing chamber (41) facing the columnar body (11); the plurality of flow balancing holes (42) are distributed around the columnar body (11); The air inlet channel (12) is in communication with the annular flow balancing chamber (41) through the connecting pipe (30), and the annular flow balancing chamber (41) is in communication with the first distribution chamber (211) through the plurality of flow balancing holes (42); A flow guide portion (13) is provided on the outer peripheral wall of the columnar body (11); the gas outlet direction of the flow balancing hole (42) is toward the flow guide portion (13); and the flow guide portion (13) is used to guide the process gas ejected from the flow balancing hole (42) to flow toward the outer peripheral wall of the first distribution chamber (211); The annular flow equalizing cavity (41) is formed by an annular tube (40) arranged around the columnar body (11); the interior of the annular tube (40) is the annular flow equalizing cavity (41); the flow equalizing holes (42) are arranged at intervals on the tube wall of the annular tube (40); and the connecting tube (30) is connected to the annular tube (40).

2. The air intake assembly according to claim 1, characterized in that: The position where the connecting tube (30) and the annular tube (40) are connected is used as a reference position; On the tube wall of the annular tube (40), the farther the flow balancing hole (42) is from the reference position, the larger the hole diameter of the flow balancing hole (42); And / or, on the tube wall of the annular tube (40), the intervals between adjacent flow equalizing holes (42) gradually decrease from the reference position in a direction away from the reference position.

3. The air intake assembly according to claim 1, characterized in that: The flow guide portion (13) is an annular groove arranged along the outer peripheral wall of the columnar body (11), the annular flow equalizing cavity (41) is located at the notch position of the annular groove, and the gas outlet direction of the flow equalizing hole (42) is toward the bottom of the annular groove.

4. The air intake assembly according to claim 3, characterized in that: In a direction from the groove bottom to the groove opening of the annular groove, the groove wall spacing of the annular groove gradually increases to guide the diffusion of the process gas.

5. The air intake assembly according to claim 4, characterized in that: In the axial cross section of the annular groove, the interior of the annular groove is in a C-shaped structure.

6. The air intake assembly according to claim 1, characterized in that: The annular tube (40) is fixedly connected to the columnar body (11) via the connecting tube (30).

7. The air intake assembly according to claim 1, characterized in that: There are a plurality of air intake channels (12), each of which comprises an air intake sub-channel (121) and a plurality of auxiliary sub-channels (122). The air intake sub-channel (121) and the plurality of auxiliary sub-channels (122) are circumferentially spaced and distributed in the columnar body (11). A flow passage (123) for communicating with the annular flow equalizing chamber (41) is provided on the inner wall of the air intake sub-channel (121).

8. An air intake device, characterized in that: The invention comprises a plurality of air intake assemblies according to any one of claims 1 to 7, wherein the plurality of air intake assemblies are stacked in sequence from top to bottom.

9. The air intake device according to claim 8, characterized in that: The columnar bodies (11) of all the air intake assemblies are fixedly connected to each other, a plurality of the air intake channels (12) are arranged in each of the columnar bodies (11), the plurality of the air intake channels (12) in each of the columnar bodies (11) are arranged in one-to-one correspondence with and communicate with the plurality of the air intake channels (12) in other columnar bodies (11), and the corresponding air intake channels (12) in all the columnar bodies (11) are communicated in sequence from top to bottom; The plurality of air intake channels (12) include an air intake sub-channel (121) and a plurality of auxiliary sub-channels (122); the air intake sub-channel (121) and the plurality of auxiliary sub-channels (122) are circumferentially spaced apart and distributed in the columnar body (11); a flow passage (123) for communicating with the annular flow equalizing chamber (41) is provided on the inner wall of the air intake sub-channel (121); wherein the air intake sub-channel (121) in each columnar body (11) and the air intake sub-channels (121) in other columnar bodies (11) are staggered with each other in a direction surrounding the columnar body (11).

10. The air intake device according to claim 9, characterized in that: The number of the air intake channels (12) is the same as the number of the air intake components.

11. A semiconductor process chamber, characterized in that: include: A chamber body and an air intake device as claimed in any one of claims 8 to 10.

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