Silicon carbide parts processing methods

Abstract

This invention relates to the field of parts processing technology, and provides a method for processing silicon carbide parts, comprising: controlling a low-polishing device to perform low-polishing treatment on a first surface of the silicon carbide part; during the low-polishing treatment of the silicon carbide, compressed air is introduced into the vent holes of the silicon carbide part until the surface shape of the first surface reaches the low-polishing set value. This invention helps to eliminate the influence of stress introduced during the upper and lower platen process on the surface shape of the silicon carbide part, and avoids the influence of water and auxiliary materials on the surface shape of the silicon carbide part, thus ensuring the polishing quality of the silicon carbide part.

Description

Technical Field

[0001] This invention relates to the field of parts processing technology, and provides a method for processing silicon carbide parts. Background Technology

[0002] Silicon carbide (SiC) is an inorganic compound produced by high-temperature smelting in an electric resistance furnace using raw materials such as quartz sand, petroleum coke (or coal coke), and sawdust (salt is added when producing green silicon carbide). When the surface finish of silicon carbide parts does not meet application requirements, the surface needs to be finely finished to control the surface shape and roughness to a certain precision.

[0003] Currently, traditional optical methods are used to grind and polish silicon carbide parts. The previous upper and lower plate method introduces residual stress, which changes the surface shape of the silicon carbide parts. At the same time, during the polishing process, water, sand, and polishing powder in the auxiliary materials can also enter the micropores in the silicon carbide parts. After the water evaporates, the water tension disappears, which also affects the final surface shape of the silicon carbide parts. Summary of the Invention

[0004] This invention provides a method for processing silicon carbide parts, which solves the problem of difficulty in controlling the surface shape and roughness accuracy when performing low-polishing of silicon carbide parts in the prior art.

[0005] To solve the above-mentioned technical problems, the present invention is implemented as follows:

[0006] This invention provides a method for processing silicon carbide parts, comprising:

[0007] The low-polishing device is controlled to perform low-polishing treatment on the first surface of the silicon carbide part. When performing low-polishing treatment on the silicon carbide, compressed air is introduced into the vent hole of the silicon carbide part until the surface shape of the first surface reaches the low-polishing set value.

[0008] A method for machining silicon carbide parts according to the present invention,

[0009] The silicon carbide parts low-pressure polishing device includes: a polishing turntable, tooling fixtures, and an air blowing assembly;

[0010] The silicon carbide part has a first surface and a second surface, the first surface and the second surface are disposed opposite to each other, and a vent hole is provided at the center of the second surface;

[0011] The polishing turntable has a polishing surface, which is used to support the first surface of the silicon carbide part for polishing the first surface.

[0012] At least a portion of the tooling fixture is arranged circumferentially along the silicon carbide part to confine the silicon carbide part to a predetermined position on the polishing turntable;

[0013] The air blowing assembly is used to communicate with the vent hole to introduce compressed air into the vent hole.

[0014] A method for machining silicon carbide parts according to the present invention,

[0015] The steps of the controlled low-polishing device performing low-polishing treatment on the first surface of the silicon carbide part include:

[0016] Apply polishing liquid to the polishing surface of the polishing disc;

[0017] The silicon carbide part is placed on a polishing turntable, and the polishing surface of the polishing turntable supports the first surface of the silicon carbide part.

[0018] Connect the air blowing assembly to the air vent, and use tooling fixtures to fix the silicon carbide parts in a set position on the polishing turntable;

[0019] The air blowing assembly is activated to control the rotation of the polishing turntable, which performs a low-polishing treatment on the first surface of the silicon carbide part.

[0020] A method for machining silicon carbide parts according to the present invention,

[0021] The silicon carbide part low-throw device further includes: a holding assembly;

[0022] The holding assembly includes a pressure rod and a swing adjustment mechanism. The actuating end of the pressure rod is connected to the tooling fixture to limit the tooling fixture on the polishing turntable.

[0023] The swing adjustment mechanism is connected to the pressure rod to control the movement of the end of the pressure rod relative to the polishing turntable.

[0024] A method for machining silicon carbide parts according to the present invention,

[0025] The tooling fixture includes a connector and multiple jaws;

[0026] The connector and the pressure rod are connected at their respective ends, and a plurality of the jaws are arranged around the connector to form a limiting space on the upper side of the polishing turntable; the limiting space is used to house the silicon carbide part;

[0027] In this configuration, one end of each claw is connected to the connector, and the other end extends toward the polished surface and is spaced apart from the polished surface.

[0028] A method for machining silicon carbide parts according to the present invention,

[0029] The chuck includes a horizontal bar and a vertical bar; the horizontal bar and the polished surface are arranged parallel to each other, and the vertical bar and the polished surface are arranged perpendicular to each other; one end of the horizontal bar is connected to the connector, the other end is connected to the upper end of the vertical bar, and the lower end of the vertical bar is spaced apart from the polished surface;

[0030] A gap is formed between the crossbar and the back of the silicon carbide part, and the length of the crossbar is greater than the radius of the silicon carbide part.

[0031] A method for machining silicon carbide parts according to the present invention,

[0032] One end of the connector is provided with a plug interface, and the actuating end of the pressure rod is provided with a plug connector, which is inserted into the plug interface;

[0033] The other end of the connector is connected to the plurality of the claws.

[0034] A method for machining silicon carbide parts according to the present invention,

[0035] The air blowing assembly includes a compressed air source, an air delivery pipe, and a rotating connecting sleeve;

[0036] The compressed air source is connected to the first end of the air supply pipe, the second end of the air supply pipe is connected to one end of the rotating connecting sleeve, and the other end of the rotating connecting sleeve is rotatably disposed at the air vent.

[0037] A method for machining silicon carbide parts according to the present invention,

[0038] The air blowing assembly also includes a pressure detection sensor and a pressure adjustment knob;

[0039] The pressure sensor and the pressure regulating knob are sequentially arranged on the gas delivery pipe along the gas delivery direction.

[0040] According to a silicon carbide part processing method provided by the present invention, the silicon carbide part low-polishing device further includes: a tank and a polishing fluid recovery assembly;

[0041] The polishing turntable is rotatably disposed in the tank, one end of the polishing liquid recovery component is connected to the bottom of the tank, and the other end extends toward the polishing surface of the polishing turntable.

[0042] The silicon carbide part processing method provided by this invention uses a tooling fixture to confine the silicon carbide part to a set position on the polishing turntable. Based on the free rotation of the silicon carbide part within the tooling fixture, the influence of stress introduced during the movement of the silicon carbide part on the first surface shape can be eliminated. At the same time, the water and auxiliary materials used in polishing are blown out through the air vents by the air blowing component, avoiding the influence of water and auxiliary materials on the surface shape of the silicon carbide part. This helps to ensure the surface shape and roughness of the silicon carbide part, thereby ensuring the polishing quality of the silicon carbide part during low-level polishing. Attached Figure Description

[0043] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0044] Figure 1 This is one of the structural schematic diagrams of the silicon carbide part provided by the present invention;

[0045] Figure 2 This is the second schematic diagram of the silicon carbide part provided by the present invention;

[0046] Figure 3 This is a schematic diagram of the low-throw device for silicon carbide parts provided by the present invention;

[0047] Figure 4 This invention provides Figure 3 A magnified view of part K;

[0048] Figure 5 This is a schematic diagram of the tooling fixture provided by the present invention;

[0049] Figure 6 This is a schematic diagram of the bonding component between the silicon carbide parts and the tooling tray provided by the present invention;

[0050] Figure 7 This is a schematic diagram of the sanding process for silicon carbide parts provided by the present invention;

[0051] Figure 8 This is a schematic diagram of high-polishing of silicon carbide parts provided by the present invention;

[0052] Figure 9 This is a schematic diagram showing the results of surface shape detection of silicon carbide parts provided by the present invention;

[0053] Figure 10 This is a schematic diagram showing the results of edge roughness detection of silicon carbide parts provided by the present invention;

[0054] Figure 11 This is a schematic flowchart of the silicon carbide part processing method based on the silicon carbide part processing system provided by the present invention.

[0055] Figure 12 This is a flowchart illustrating the steps of using the controlled low-polishing device provided by the present invention to perform low-polishing treatment on the first surface of a silicon carbide part.

[0056] Figure label:

[0057] 1. Silicon carbide parts;

[0058] 11. Sintering zone; 12. Annular zone; 111. Vent hole;

[0059] 2. Low-pressure polishing device for silicon carbide parts; 21. Polishing turntable; 22. Tooling fixture; 23. Air blowing assembly; 24. Holding assembly; 25. Tank; 26. Polishing fluid recovery assembly; 211. Polishing surface; 221. Connector; 222. Claw; 231. Compressed air source; 232. Air supply pipe; 233. Rotating connecting sleeve; 234. Pressure sensor; 235. Pressure regulating knob; 241. Pressure rod; 242. Swing adjustment mechanism; 2221. Horizontal bar; 2222. Vertical bar; 2411. Actuating end;

[0060] 3. Grinding device; 4. High-polishing device; 5. Tooling tray;

[0061] P1, first surface; P2, second surface; P3, third surface. Detailed Implementation

[0062] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0063] The following is combined with Figures 1 to 12 The silicon carbide part processing method provided by the present invention will be described in detail through specific embodiments and application scenarios.

[0064] In some embodiments, such as Figure 1 , Figure 2 and Figure 3 As shown, this embodiment provides a method for processing silicon carbide parts, wherein the silicon carbide part low-polishing device includes: a polishing turntable 21, a tooling fixture 22 and an air blowing assembly 23.

[0065] The silicon carbide part 1 has a first surface P1 and a second surface P2, which are arranged opposite to each other. Multiple micropores are distributed on the first surface P1, and a vent hole 111 is provided at the center of the second surface P2, which is connected to the multiple micropores.

[0066] The polishing turntable 21 has a polishing surface 211, which is used to support the first surface P1 of the silicon carbide part 1 for polishing the first surface P1.

[0067] At least part of the tooling fixture 22 is arranged circumferentially along the silicon carbide part 1 to confine the silicon carbide part 1 to a set position on the polishing turntable 21.

[0068] The air blowing assembly 23 is used to communicate with the vent 111 to introduce compressed air into the vent 111.

[0069] Understandably, the diameter of the micropores on the first surface P1 of the silicon carbide part 1 ranges from 5 to 50 μm, and the communication between the micropores and the vent 111 ensures that the first surface P1 and the second surface P2 are interconnected.

[0070] In some examples, the silicon carbide part 1 is disc-shaped, including a central sintered region and a dense annular structure at the edge, with multiple micropores distributed in the sintered region. The sintered region and the dense annular structure are an integral structure. Optionally, the diameter of the silicon carbide part 1 is 200 mm and the thickness is 20 mm.

[0071] The first surface P1 is the surface to be processed of the silicon carbide part 1, and the polished surface 211 is used to fit with the first surface P1.

[0072] The polishing turntable 21 can rotate around its central axis under the drive of the rotary drive mechanism. The polishing surface 211 maintains a stable contact state with the first surface P1. Thus, the polishing process of the first surface P1 is realized according to the relative rotation of the first surface P1 and the polishing turntable 21.

[0073] Optionally, the polishing turntable 21 has a diameter of 240 mm.

[0074] The fixture 22 confines the silicon carbide part 1 in a set position. Since the fixture 22 does not contact the second surface P2 and the side of the silicon carbide part 1, the fixture 22 does not generate stress on the silicon carbide part 1. The silicon carbide part 1 can rotate freely in the fixture 22 during polishing, thereby ensuring that the stress introduced by the fixture 22 on the silicon carbide part 1 is not affected.

[0075] The air blowing assembly 23 introduces compressed air through the vent 111 on the second surface P2. Based on the connectivity between the vent 111 and the micropores, the compressed air can blow out the water and auxiliary materials used in the polishing process from the multiple micropores on the first surface P1, so as to avoid the influence of water tension after water evaporation on the surface shape of the first surface P1.

[0076] As can be seen from the above, the silicon carbide part processing method of the present invention, by using the tooling fixture 22 to confine the silicon carbide part 1 to the set position of the polishing turntable 21, and based on the free rotation of the silicon carbide part 1 within the tooling fixture 22, can eliminate the influence of stress introduced during the upper and lowering of the silicon carbide part 1 on the surface shape of the first surface P1. At the same time, the air blowing component 23 blows out the water and auxiliary materials during polishing from multiple microholes on the first surface P1, avoiding the influence of water and auxiliary materials on the surface shape of the silicon carbide part 1, which is beneficial to ensuring the surface shape and roughness of the silicon carbide part 1, thereby ensuring the polishing quality of the silicon carbide part 1 during low-level polishing.

[0077] In some embodiments, such as Figure 3 and Figure 4 As shown, the silicon carbide part low-throw device 2 in this embodiment further includes: a holding assembly 24.

[0078] The holding assembly 24 includes a pressure rod 241 and an amplitude adjustment mechanism 242. The actuating end 2411 of the pressure rod 241 is connected to the tooling fixture 22 to limit the tooling fixture 22 on the polishing turntable 21.

[0079] The swing adjustment mechanism 242 is connected to the pressure rod 241 to control the movement of the actuating end 2411 of the pressure rod 241 relative to the polishing turntable 21.

[0080] Understandably, the pressure bar 241 can confine the tooling fixture 22 to the set position of the polishing turntable 21, and the swing adjustment mechanism 242 adjusts the swing of the actuator end 2411 of the pressure bar 241. The actuator end 2411 controls the movement of the tooling fixture 22 relative to the polishing turntable 21. When the surface shape of the first surface P1 is a concave ring, the first surface P1 has a shape that is low in the middle and high on the outside. The swing value is increased to repair the surface shape of the edge. When the surface shape of the first surface P1 is a convex ring, the first surface P1 has a shape that is high in the middle and low on the outside. The swing value is decreased to repair the surface shape of the middle.

[0081] Specifically, the amplitude adjustment mechanism 242 can use a cam structure to adjust the amplitude of the output rod, or it can use an arc-shaped structure to adjust the amplitude of the output rod.

[0082] In this embodiment, by setting up a pressure rod 241 and an amplitude adjustment mechanism 242, the position of the tooling fixture 22 relative to the polishing turntable 21 can be adjusted by adjusting the amplitude value of the amplitude adjustment mechanism 242, so as to repair the surface shape of the middle or edge of the first surface P1 and ensure the consistency of the surface shape of the first surface P1.

[0083] In some embodiments, such as Figure 5 As shown, the tooling fixture 22 in this embodiment includes a connector 221 and multiple jaws 222.

[0084] The connector 221 and the actuator end 2411 of the pressure rod 241 are connected, and multiple claws 222 are arranged around the connector 221 to form a limiting space on the upper side of the polishing turntable 21; the limiting space is used to set the silicon carbide part 1.

[0085] In this configuration, one end of each claw 222 is connected to the connector 221, and the other end extends toward the polished surface 211 and is spaced apart from the polished surface 211.

[0086] Understandably, when the connector 221 is connected to the actuating end 2411 of the pressure rod 241, the connector 221 can be a sleeve structure and the actuating end 2411 of the pressure rod 241 can be a protruding structure, with the connection achieved based on the fit between the sleeve and the protrusion; the connector 221 can also be a protruding structure and the actuating end 2411 of the pressure rod 241 can be a sleeve structure, with the connection achieved based on the fit between the protrusion and the sleeve.

[0087] During the low-polishing of silicon carbide part 1, silicon carbide part 1 rotates freely within the confined space, and the relative rotation between it and the polishing surface 211 achieves the polishing treatment of the first surface P1.

[0088] In some examples, the connector 221 can be a sleeve structure, and the actuating end 2411 of the pressure rod 241 can be a rod-shaped structure. The rod-shaped structure extends into the sleeve structure to connect the connector 221 and the actuating end 2411 of the pressure rod 241. The sleeve has a threaded hole on its wall. After the connector 221 and the actuating end 2411 of the pressure rod 241 are installed in place, the fastener is screwed into the threaded hole to fix the connector 221 and the actuating end 2411 of the pressure rod 241.

[0089] The fastener can be either a screw or a bolt.

[0090] In this embodiment, by setting the tooling fixture 22 with a connector 221 and multiple jaws 222, the actuator end 2411 of the pressure rod 241 is fixed to the tooling fixture 22 through the connector 221, and the limiting space formed by the multiple jaws 222 and the polishing turntable 21 can ensure the free rotation of the silicon carbide part 1, avoiding the change in the surface shape of the first surface P1 caused by stress during processing.

[0091] In some embodiments, such as Figure 3 and Figure 5 As shown, the chuck 222 in this embodiment includes a horizontal bar 2221 and a vertical bar 2222. The horizontal bar 2221 is arranged parallel to the polished surface 211, and the vertical bar 2222 is arranged perpendicular to the polished surface 211. One end of the horizontal bar 2221 is connected to the connector 221, and the other end is connected to the upper end of the vertical bar 2222. The lower end of the vertical bar 2222 is spaced apart from the polished surface 211.

[0092] A gap is formed between the crossbar 2221 and the back surface of the silicon carbide part 1, and the length of the crossbar 2221 is greater than the radius of the silicon carbide part 1.

[0093] Understandably, the silicon carbide part 1 is disc-shaped and includes a sintering region 11 and an annular region 12. The annular region 12 extends circumferentially along the sintering region 11. The front side of the sintering region 11 is formed as a first surface P1, and the back side of the sintering region 11 is formed as a second surface P2. The front side of the annular region 12 is flush with the front side of the sintering region 11, and a height difference is formed between the back side of the annular region 12 and the second surface P2.

[0094] The horizontal bar 2221 and the vertical bar 2222 are set vertically to ensure that the limiting space formed by the horizontal bar 2221 and the vertical bar 2222 is as large as possible.

[0095] The back side of the annular region 12 is the third surface P3, and a height difference is formed between the third surface P3 and the second surface P2.

[0096] The gap between the crossbar 2221 and the back of the annular area 12, and the length of the crossbar 2221 being greater than the radius of the silicon carbide part 1, ensure that the volume of the limiting space is greater than the volume of the silicon carbide part 1, thereby allowing the silicon carbide part 1 to move freely within the limiting space.

[0097] In some embodiments, such as Figure 3 As shown, the air blowing assembly 23 in this embodiment includes a compressed air source 231, an air delivery pipe 232, and a rotating connecting sleeve 233.

[0098] The compressed air source 231 is connected to the first end of the air supply pipe 232, the second end of the air supply pipe 232 is connected to one end of the rotating connecting sleeve 233, and the other end of the rotating connecting sleeve 233 is rotatably disposed at the vent hole 111.

[0099] Understandably, the compressed air source 231 can be an air storage tank or an air compressor.

[0100] The air supply pipe 232 delivers compressed gas from the compressed air source 231 into the vent hole 111. One end of the rotating connecting sleeve 233 is fixedly connected to the air supply pipe 232, and the other end of the rotating connecting sleeve 233 can rotate relative to the vent hole 111. During the polishing process, when the silicon carbide part 1 rotates relative to the tooling fixture 22, the rotating connecting sleeve 233 rotates accordingly to prevent the second end of the air supply pipe 232 from getting tangled, which would affect the blowing effect.

[0101] Among them, the rotating connecting sleeve 233 can be a rotating nut.

[0102] In some examples, the crossbar 2221 also includes a connector hole through which the second end of the gas supply pipe 232 passes and extends into the vent 111. The connector hole in this embodiment makes the path of the gas supply pipe 232 into the vent 111 shorter and more convenient, thus optimizing the path of the gas supply pipe 232.

[0103] In some embodiments, such as Figure 3 As shown, the air blowing assembly 23 in this embodiment also includes a pressure detection sensor 234 and a pressure regulating knob 235.

[0104] Pressure sensor 234 and pressure regulating knob 235 are sequentially arranged on gas delivery pipe 232 along the gas delivery direction.

[0105] Understandably, the pressure sensor 234 can both detect the pressure in the gas delivery pipe 232 and display the pressure value. The pressure regulating knob 235 is used to adjust the pressure of the compressed gas in the gas delivery pipe 232.

[0106] In this embodiment, by setting a pressure sensor and a pressure regulating component in the air blowing assembly 23, the air blowing assembly 23 can detect and display the pressure in the air supply pipe 232 in real time during the polishing process, and can adjust the pressure by adjusting the pressure knob 235 based on the pressure reading. This ensures that water and auxiliary materials in the silicon carbide part 1 can be blown out from the micropores, while preventing the distance between the first surface P1 of the silicon carbide part 1 and the polishing surface 211 from becoming too large due to excessive pressure, which would affect the polishing effect.

[0107] In some embodiments, such as Figure 3 As shown, the silicon carbide part low-polishing device 2 in this embodiment also includes: a tank 25 and a polishing fluid recovery assembly 26.

[0108] The polishing turntable 21 is rotatably disposed in the tank 25. One end of the polishing liquid recovery component 26 is connected to the bottom of the tank 25, and the other end extends toward the polishing surface 211 of the polishing turntable 21.

[0109] Understandably, the polishing liquid on the polishing turntable 21 flows into the tank 25 due to gravity. The polishing liquid recovery component 26 includes a polishing liquid pipeline and a polishing liquid recoverer. The polishing liquid recoverer transports the polishing liquid at the bottom of the tank 25 to the polishing surface 211 of the polishing turntable 21 through the polishing liquid pipeline, realizing the recycling and reuse of the polishing liquid, saving the time of manually adding auxiliary materials, and improving the polishing efficiency.

[0110] In some embodiments, such as Figure 3 , Figure 7 and Figure 8 As shown, this embodiment provides a silicon carbide parts processing system, including: a grinding device 3, a high-polishing device 4, and a silicon carbide parts low-polishing device 2.

[0111] The abrasive device 3 is used to abrade the first surface P1 of the silicon carbide part 1, and the high-polishing device 4 and the low-polishing device 2 of the silicon carbide part are used to polish the first surface P1 after abrasion treatment in sequence.

[0112] Specifically, since the silicon carbide parts processing system includes a silicon carbide parts low-throw device 2, and the specific structure of the silicon carbide parts low-throw device 2 is as described in the above embodiments, the silicon carbide parts processing system shown in this embodiment includes all the technical solutions of the above embodiments. Therefore, it has at least all the beneficial effects obtained by all the technical solutions of the above embodiments, which will not be described in detail here.

[0113] Understandably, such as Figure 7 As shown, the first surface P1 of the silicon carbide part 1 is brought into contact with the grinding disc of the grinding device 3 to perform a grinding process on the first surface P1.

[0114] like Figure 8 As shown, the first surface P1 of the silicon carbide part 1 is brought into contact with the polishing turntable 21 of the high-polishing device 4 to perform high-polishing treatment on the first surface P1.

[0115] In this embodiment, by setting a grinding device 3, a high-polishing device 4, and a low-polishing device 2 in the silicon carbide parts processing system, the first surface P1 of the silicon carbide part 1 can be ground, high-polished, and low-polished, ensuring that the surface shape and roughness of the first surface P1 are within a certain accuracy range.

[0116] In some embodiments, such as Figure 11 As shown, this embodiment provides a method for processing silicon carbide parts, including the following steps:

[0117] Step 1111: Control the abrasive device to perform abrasive treatment on the first surface of the silicon carbide part.

[0118] The high-polishing device is controlled to perform high-polishing treatment on the first surface of the silicon carbide part until the surface shape of the first surface reaches the high-polishing set value.

[0119] The low-throw device is controlled to perform low-throw treatment on the first surface of the silicon carbide part by introducing compressed air into the vent hole of the silicon carbide part until the surface shape of the first surface reaches the low-throw setting value.

[0120] Understandably, firstly, a chamfering die is used to chamfer the edges of the first surface and side surface, and the edges of the second surface and side surface of the silicon carbide part. The rotation speed of the equipment is controlled at 20-30 rad / min. Water and boron carbide with a particle size of W7-W14 are used. The chamfering dimension is C0.1, and the machining allowance is 0.1 mm.

[0121] Secondly, such as Figure 6 As shown, the silicon carbide parts are subjected to a mounting process. First, the second surface of the silicon carbide parts is firmly attached to the bonding surface of the tooling plate. Then, a heating mixture of rosin and beeswax in a 1:1 ratio is used to bond the side surface of the silicon carbide parts to the bonding surface of the tooling plate. After cooling for 0.5 to 1.5 hours, the bonded parts are obtained.

[0122] Next, boron carbide with a particle size of W7 to W14 is mixed with water to form an auxiliary material. The auxiliary material is brushed onto the grinding disc of the grinding device. Then, the first surface of the silicon carbide part in the bonding component is pressed tightly against the grinding disc. The first surface of the silicon carbide part is rubbed against the grinding disc to ensure that the boron carbide is fully adhered between the first surface and the grinding disc. The rotation speed of the grinding disc is controlled between 3 and 5 rad / min. The grinding effect is observed. After the grinding operation is correct, the rotation speed of the grinding disc is adjusted to 90 to 120 rad / min. The grinding auxiliary material is added while grinding. The results are observed every 3 to 5 minutes. After grinding, the first surface becomes a flat surface, completing the grinding process.

[0123] Finally, rinse the abrasive material off the silicon carbide parts with clean water.

[0124] Step 1112: Control the high-polishing device to perform high-polishing treatment on the first surface of the silicon carbide part until the surface shape of the first surface reaches the high-polishing set value.

[0125] Understandably, the process begins with a polishing turntable. White corundum with a particle size of 0.8–1.2 μm is mixed with water to form an auxiliary material, with a white corundum to water ratio of 1:(4–7). The first surface of the silicon carbide part in the abraded assembly is then pressed firmly against the polishing turntable. The assembly is held down and moved left and right on the turntable to fill the space between the first surface and the turntable with the white corundum and water auxiliary material. The rotation speed of the polishing turntable is controlled between 3–5 rad / min, and the high-polishing effect is observed. After confirming the high-polishing operation is correct, the rotation speed of the polishing turntable is adjusted to 150–190 rad / min. White corundum and water auxiliary material are added during the high-polishing process. The surface shape is observed under an interferometer every 2–3 hours of high-polishing. This process is repeated until the surface shape of the first surface of the silicon carbide part reaches the high-polishing set value, which is PV≤1000nm, thus completing the high-polishing treatment of the first surface.

[0126] Then, rinse the high-polishing varnish off the silicon carbide parts with clean water and blow-dry the silicon carbide parts.

[0127] Next, perform the uncoating operation on the bonded parts after high polishing. Place the bonded parts in a refrigerator, adjust the temperature to -10 to -20°C, and freeze for 2 to 3 hours. Then remove the bonded parts from the refrigerator, use a blade to remove the mixture of rosin and paraffin, and separate the silicon carbide parts from the tooling tray.

[0128] Next, immerse the silicon carbide parts in the Polik solution for 2-3 hours, then immerse them in the acetone-alcohol solution for 10-20 minutes. Next, fill the vent with pure water and blow air into the vent with an air gun. Place a piece of white paper under the liquid flowing out of the micropores and observe whether the liquid is clean. Repeat the above operation several times until clean liquid flows out of the micropores. Wipe the first surface clean with a clean white cloth, then blow the micropores dry with an air gun. Finally, use a clean white cloth dipped in acetone-alcohol solution to wipe the first surface and other surfaces of the silicon carbide parts until they are clean.

[0129] Step 1113: Control the low-polishing device to perform low-polishing treatment on the first surface of the silicon carbide part. When performing low-polishing treatment on the silicon carbide, compressed air is introduced into the vent hole of the silicon carbide part until the surface shape of the first surface reaches the low-polishing set value.

[0130] Understandably, the low-throw setting is PV < 300nm, and the edge roughness Sa < 1nm.

[0131] First, the first surface of the silicon carbide part is polished using a low-polish device.

[0132] Then, clean the silicon carbide parts after low polishing by immersing them in an acetone-alcohol solution for 10-20 minutes, wiping them clean, and then drying them with an air gun.

[0133] Finally, an interferometer was used to inspect the surface shape of the silicon carbide parts, such as... Figure 9 As shown, the surface shape detection result is PV = 198.564nm, which meets the requirement of PV < 300nm. Simultaneously, a white light interferometer was used to detect the edge roughness of the silicon carbide part, as shown... Figure 10 As shown, the edge roughness detection result is that the edge roughness Sa = 0.501 nm, which meets the requirement that the edge roughness Sa < 1 nm.

[0134] In some embodiments, during step 1113, such as Figure 12 As shown, the steps of controlling the low-polishing device to perform low-polishing treatment on the first surface of a silicon carbide part include:

[0135] Step 1211: Apply polishing liquid to the polishing surface of the polishing turntable.

[0136] Understandably, the polishing slurry contains 0.5μm diamond powder, and the diamond powder is mixed with water in a ratio of 1:(4~7). The mixed slurry is then dropped onto the polishing disc. The first application is 70~80ml, and thereafter it is dropped once every half hour, with each application being about 30~40ml.

[0137] Step 1212: Place the silicon carbide part on the polishing turntable, with the polishing surface of the turntable supporting the first surface of the silicon carbide part.

[0138] Understandably, when placing silicon carbide parts on a polishing turntable, the second surface of the silicon carbide parts should face upwards and the first surface downwards, so that the first surface of the silicon carbide parts is in contact with the polishing surface of the polishing turntable.

[0139] Step 1213: Connect the air blowing assembly to the vent, and use a tooling fixture to position the silicon carbide part at a set position on the polishing turntable.

[0140] Understandably, the air blowing assembly is adjusted to allow compressed air to flow smoothly into the vent. Then, the position of the tooling fixture on the polishing turntable is adjusted to ensure that the tooling fixture does not contact the side or second surface of the silicon carbide part.

[0141] Step 1214: Activate the air blowing assembly and control the polishing turntable to perform low-polish treatment on the first surface of the silicon carbide part.

[0142] Understandably, when performing low-level polishing on the first surface of the silicon carbide part, the air blowing assembly is activated, and compressed air blows the polishing slurry out of the micropores. The rotation speed of the polishing turntable is controlled between 3 and 5 rad / min. The polishing process of silicon carbide part 1 is observed to ensure it is normal, and whether bubbles emerge from the edges where the side of the silicon carbide part intersects with the polishing turntable. The optimal polishing state is: the silicon carbide part rotates freely within the fixture, the air blowing assembly blows smoothly, the first surface of the silicon carbide part is in contact with the polishing surface of the polishing turntable, and water and auxiliary materials are blown out from the micropores simultaneously. When the low-level polishing device reaches its optimal state, the rotation speed of the polishing turntable is increased to 15–20 rad / min, and the surface shape of the first surface is observed every 2–3 hours.

[0143] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method of machining a silicon carbide part, the method comprising: The application relates to a silicon carbide part low-throw processing device. The application comprises the following steps: controlling a low-throw device to perform low-throw processing on a first surface of a silicon carbide part; when the silicon carbide part is subjected to low-throw processing, compressed air is introduced into a gas passage hole of the silicon carbide part until the surface shape of the first surface reaches a low-throw setting value; the silicon carbide part low-throw processing device comprises a polishing turntable, a tool clamp and a blowing assembly; the silicon carbide part has a first surface and a second surface, the first surface and the second surface are oppositely arranged, and the second surface is provided with a gas passage hole in the center; the polishing turntable has a polishing surface, the polishing surface is used for supporting the first surface of the silicon carbide part to perform polishing processing on the first surface; at least part of the tool clamp is arranged along the circumference of the silicon carbide part to limit the silicon carbide part to a set position on the polishing turntable; the blowing assembly is used for communicating with the gas passage hole to introduce compressed air into the gas passage hole; the first surface is distributed with a plurality of micropores, and the gas passage hole and the plurality of micropores are communicated; 2. The method according to claim 1, wherein the blowing assembly introduces compressed air from the gas passage hole on the second surface, and based on the communication between the gas passage hole and the micropores, the compressed air blows water and auxiliary materials used in the polishing process out of the plurality of micropores on the first surface. The application further relates to a silicon carbide part low-throw processing method. The application comprises the following steps: dropping polishing liquid on the polishing surface of the polishing turntable; placing the silicon carbide part on the polishing turntable, and supporting the first surface of the silicon carbide part by the polishing surface of the polishing turntable; 3. The method according to claim 1, wherein communicating the blowing assembly with the gas passage hole, and limiting the silicon carbide part to a set position on the polishing turntable by the tool clamp; starting the blowing assembly, and controlling the polishing turntable to rotate to perform low-throw processing on the first surface of the silicon carbide part. The silicon carbide part low-throw processing device further comprises a pressing assembly.

4. The method according to claim 3, wherein The pressing assembly comprises a pressing rod and a swing adjustment mechanism, the execution end of the pressing rod is connected with the tool clamp to limit the tool clamp on the polishing turntable; the swing adjustment mechanism is connected with the pressing rod to control the movement of the execution end of the pressing rod relative to the polishing turntable. The tool clamp comprises a connecting piece and a plurality of clamping claws; the connecting piece is connected with the execution end of the pressing rod, and the plurality of clamping claws are arranged around the connecting piece to form a limiting space on the upper side of the polishing turntable; the limiting space is used for arranging the silicon carbide part; one end of each clamping claw is connected with the connecting piece, and the other end extends to the polishing surface and is arranged in a spaced manner relative to the polishing surface.

5. The silicon carbide part processing method according to claim 4, wherein the clamping claw comprises a horizontal rod and a vertical rod; the horizontal rod is arranged in parallel with the polishing surface, and the vertical rod is arranged in perpendicular with the polishing surface; one end of the horizontal rod is connected with the connecting piece, and the other end is connected with the upper end of the vertical rod; the lower end of the vertical rod is arranged in a spaced manner relative to the polishing surface; a gap is formed between the horizontal rod and the back surface of the silicon carbide part, and the length of the horizontal rod is greater than the radius of the silicon carbide part.

6. The method of claim 4, wherein, One end of the connecting piece is provided with a plug-in interface, and an execution end of the pressing rod is provided with a plug-in head which is inserted into the plug-in interface; The other end of the connecting piece is connected with a plurality of the clamping claws.

7. The method of claim 1, wherein, The air blowing assembly comprises a compressed air source, a gas conveying pipe and a rotating connecting sleeve; The compressed air source and the first end of the gas conveying pipe are in communication, the second end of the gas conveying pipe and one end of the rotating connecting sleeve are in communication, and the other end of the rotating connecting sleeve is rotatably arranged in the air hole.

8. The method of claim 7, wherein, The air blowing assembly further comprises a pressure detection sensor and a pressure regulating knob. The pressure detection sensor and the pressure regulating knob are sequentially arranged on the gas conveying pipe along the conveying direction of the gas.

9. The method according to any one of claims 1 to 8, wherein The silicon carbide part low-throwing device further comprises a groove body and a polishing liquid recovery assembly. The polishing turntable is rotatably arranged in the groove body, one end of the polishing liquid recovery assembly is in communication with the bottom of the groove body, and the other end extends to the polishing surface of the polishing turntable.

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