Method for treating photoresist exposure contaminants, treatment equipment and photolithography machine

Abstract

The present application provides a method, a processing device and a photolithography machine for processing photoresist exposure pollutants, the method comprising: providing a vacuum chamber, wherein a device to be processed is arranged in the vacuum chamber, and pollutants formed by the photoresist exposure process are deposited on the device, and the pollutants include carbon pollutants and / or metal hydride pollutants; continuously introducing process gas into the vacuum chamber; providing X-rays, wherein the X-rays are used to excite the process gas and cause the process gas to produce active particles, and the active particles are used to react with the carbon pollutants and / or metal hydride pollutants on the device to be processed to produce volatile gaseous compounds; and discharging the volatile gaseous compounds from the vacuum chamber. The processing equipment comprises: a box, a vacuum pump, an X-ray source and a process gas source. The present invention proposes a solution for the promotion and application of metal oxide photoresists in actual photolithography systems, and solves the dual pollution problems of metallic pollution and carbon deposition of metal oxide photoresists containing organic matter.

Description

Technical Field

[0001] The present invention relates to the technical field of photolithography pollutant treatment, and in particular to a method, equipment and photolithography machine for treating photoresist exposure pollutants. Background Art

[0002] At present, there are three main types of extreme ultraviolet or electron beam photoresist materials: polymer type, molecular glass type and metal oxide nanoparticle type. Among them, metal oxide nanoparticle photoresist is expected to significantly improve lithography sensitivity and lithography resolution. Although metal oxide photoresist has shown great application potential in extreme ultraviolet lithography or electron beam lithography. Metal oxide photoresist is regarded as the most promising new generation of photoresist. However, compared with traditional photoresist, the introduction of metal oxide nanoparticles also brings new problems to the lithography process.

[0003] Traditional photoresists are organic polymer molecules. During the exposure process of photoresists, a degassing effect will occur, producing gaseous organic molecules that diffuse into the vacuum chamber. In the device area irradiated by extreme ultraviolet light or electron beam, hydrocarbon molecules will be broken down into free carbon, forming carbon deposition pollution on the surface of devices, masks, etc., resulting in reduced optical reflectivity and affected work efficiency. In order to inhibit the process of carbon pollution, hydrogen is usually filled into the vacuum chamber as a balancing gas. Under the action of extreme ultraviolet light, hydrogen molecules are excited to produce hydrogen free radicals, which slow down the development of carbon pollution by reacting with hydrogen and carbon. Due to the balancing gas effect of hydrogen, new problems are brought to metal oxide photoresists containing organic matter. Hydrogen free radicals not only react with carbon, but also undergo hydrogenation reactions with metal elements. Hydrogenated metals will be deposited on the surface of the device, producing metallic pollution. Summary of the invention

[0004] The present invention aims at solving the above problems, at least overcomes one shortcoming, and proposes a method for treating photoresist exposure contaminants, a treatment device and a photolithography machine.

[0005] The technical solution adopted by the present invention is as follows:

[0006] The present application provides a method for treating photoresist exposure contaminants, comprising the following steps:

[0007] Providing a vacuum chamber, wherein a device to be processed is arranged in the vacuum chamber, and contaminants formed by a photoresist exposure process are deposited on the device, wherein the contaminants include carbon contaminants and / or metal hydride contaminants;

[0008] continuously introducing a process gas into the vacuum chamber;

[0009] Providing X-rays, wherein the X-rays are used to excite the process gas and generate active species from the process gas, wherein the active species are used to react with the carbon pollutants and / or the metal hydride pollutants on the device to be processed to generate volatile gaseous compounds;

[0010] Volatile gaseous compounds are exhausted from the vacuum chamber.

[0011] The method excites the process gas to generate active particles through X-ray irradiation, and induces the active particles to react with carbon pollutants and / or metal hydride pollutants formed in the photolithography process under the action of X-ray irradiation, thereby achieving the treatment of pollutants. That is, the present invention proposes a solution for the popularization and application of metal oxide photoresists in actual photolithography systems, and solves the dual pollution problems of metallic pollution and carbon deposition of metal oxide photoresists containing organic substances.

[0012] Furthermore, the wavelength of the X-ray is 0.1nm~10nm, and the power is less than or equal to 5W.

[0013] Excessive X-ray power can affect the performance of optical components or masks and even cause device damage.

[0014] Furthermore, the initial vacuum degree of the vacuum chamber is less than or equal to 10 -5 Pa;

[0015] After the process gas is introduced, the vacuum degree of the vacuum chamber is controlled to be less than or equal to 10 -1 Pa range.

[0016] Furthermore, the process gas is carbon dioxide or oxygen or a mixed gas of carbon dioxide and oxygen.

[0017] Furthermore, the process gas is carbon dioxide, which can generate active carbon monoxide molecules and oxygen free radicals under the irradiation of the X-rays. The generated active carbon monoxide molecules and oxygen free radicals are used to react with the metal hydride pollutants and the carbon pollutants to generate volatile gaseous molecules.

[0018] Carbon monoxide molecules are reducing and oxygen free radicals are oxidizing. Carbon monoxide molecules reduce hydrogenated metal pollutants into volatile metal atom-containing molecules, and oxygen free radicals oxidize carbon pollutants into volatile carbon dioxide molecules. That is, the volatile substances generated by the treatment are easy to handle.

[0019] The weak oxidizing property of oxygen free radicals and the reducing property of carbon monoxide molecules can avoid excessive treatment of optical element film materials while achieving the treatment of pollutants.

[0020] Furthermore, the device is an optical element or a mask.

[0021] The optical element or mask is an optical element or mask after an extreme ultraviolet lithography process or an electron beam lithography process.

[0022] Furthermore, the photoresist exposure process uses an extreme ultraviolet lithography machine for exposure, and the photoresist formed by the photolithography process to expose the photoresist exposure contaminants is a metal nanoparticle photoresist.

[0023] The nanoparticles of the metal nanoparticle photoresist are HfO 2 Core or ZrO 2 nuclear.

[0024] The present application also provides a photoresist exposure contaminant processing device, which is used to process carbon contaminants and / or metal hydride contaminants on an optical element or a mask, and the photoresist exposure contaminant processing device comprises: a box, a vacuum pump, an X-ray source, and a process gas source;

[0025] A vacuum chamber is formed in the box body, and the vacuum chamber is used to place the device to be processed and provide a reaction space for the processing;

[0026] The vacuum pump is connected to the vacuum chamber, and the vacuum pump is used to evacuate the vacuum chamber;

[0027] The process gas source is connected to the vacuum chamber through a pipeline, and the process gas source is used to introduce process gas into the vacuum chamber;

[0028] The X-ray source is disposed in the vacuum chamber, and is used to emit X-rays to the device to be processed.

[0029] The photolithography contamination treatment device is the equipment required for implementing the above-mentioned photolithography contamination treatment method. The photolithography contamination treatment device has a simple structure and is easy to operate. Combined with the above-mentioned operation method, it can further promote the application of metal oxide photoresist in actual photolithography systems.

[0030] Furthermore, the X-ray source is an X-ray tube, the X-rays emitted by the X-ray tube are point light sources, the wavelength of the X-rays is 0.01nm~10nm, and the power is less than or equal to 5W;

[0031] The process gas is carbon dioxide or oxygen or a mixed gas of carbon dioxide and oxygen;

[0032] The device to be treated for contamination is an optical element or a mask having carbon contaminants and / or metal hydride contaminants deposited on the surface;

[0033] The box body is also formed with an exhaust port, and the exhaust port is used to discharge the gas in the vacuum chamber after the photoresist exposure contaminant treatment;

[0034] A flow meter is provided on the pipeline connecting the process gas source and the vacuum chamber.

[0035] The flow meter is used to monitor and control the flow of process gas to ensure the normal operation and safety of the system.

[0036] The present application also provides a photolithography machine, which includes a vacuum chamber and a process gas source, wherein an X-ray source is arranged in the vacuum chamber.

[0037] The X-ray source is used to emit X-rays to the optical element or mask to be processed;

[0038] The process gas source is in communication with the vacuum chamber, and the process gas source is used to introduce process gas into the vacuum chamber.

[0039] That is, in actual use, by setting an X-ray source and introducing a process gas source in the vacuum chamber of the lithography machine, after the optical element or mask with deposited carbon pollutants and / or the metal hydride pollutants is subjected to lithography processing or electron beam lithography process by an extreme ultraviolet lithography machine, it can be directly processed in the vacuum chamber, thereby simplifying the steps of removing and reinstalling the optical element or mask, and greatly improving the operating efficiency.

[0040] Furthermore, the vacuum chamber is provided with an exhaust port for discharging the gas after the pollutant treatment.

[0041] In actual use, the vacuum chamber may be a photolithography chamber.

[0042] The beneficial effects of the present invention are:

[0043] (1) This method stimulates the process gas to generate active particles through X-ray irradiation, and induces the active particles to react with carbon pollutants and / or metal hydride pollutants generated by the photoresist exposure process under the action of X-ray irradiation, thereby achieving the treatment of pollutants. That is, the present invention proposes a solution for the promotion and application of metal oxide photoresists in actual photolithography systems, and solves the dual pollution problems of metallic pollution and carbon deposition of metal oxide photoresists containing organic substances.

[0044] (2) When the process gas is carbon dioxide, carbon dioxide generates active carbon monoxide molecules and active oxygen free radicals under the irradiation of X-rays. The active carbon monoxide molecules and oxygen free radicals react with the metal hydride pollutants and the carbon pollutants, respectively, to generate volatile gaseous substances that are easy to handle.

[0045] (3) By arranging an X-ray source and introducing a process gas source in the vacuum chamber of the lithography machine, after the optical element or mask with accumulated carbon pollutants and / or the metal hydride pollutants is subjected to lithography processing or electron beam lithography process by an extreme ultraviolet lithography machine, it can be directly processed in the vacuum chamber, thereby simplifying the steps of removing and reinstalling the optical element or mask, and greatly improving the operating efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 It is a schematic flow chart of a method for treating photoresist exposure contaminants according to an embodiment of the present invention;

[0047] Figure 2 The present invention is a schematic diagram of the structure and principle of using a photoresist exposure pollutant processing device to process pollutants.

[0048] The reference numerals in the figures are:

[0049] 1. Box; 11. Vacuum chamber; 12. Exhaust port; 2. Vacuum pump; 3. X-ray source; 31. X-ray; 4. Process gas source; 41. Flow meter; 5. Device to be processed; 51. Carbon pollutants; 52. Metal hydride pollutants; 6. Carbon dioxide; 61. Carbon monoxide molecules; 62. Oxygen free radicals; 7. Molecules containing metal atoms. DETAILED DESCRIPTION

[0050] The present invention is described in detail below in conjunction with the accompanying drawings.

[0051] like Figure 1 As shown, the present application provides a method for treating photoresist exposure contaminants, comprising the following steps:

[0052] S1: providing a vacuum chamber, wherein a device to be processed is arranged in the vacuum chamber, and contaminants formed by a photoresist exposure process are deposited on the device, wherein the contaminants include carbon contaminants and / or metal hydride contaminants;

[0053] S2: continuously introduce process gas into the vacuum chamber;

[0054] S3: providing X-rays, wherein the X-rays are used to excite the process gas and generate active species in the process gas, wherein the active species are used to react with carbon pollutants and / or metal hydride pollutants on the device to be processed to generate volatile gaseous compounds;

[0055] S4: exhausting the volatile gaseous compounds from the vacuum chamber.

[0056] The method excites the process gas to generate active particles through X-ray irradiation, and induces the active particles to react with carbon pollutants and / or metal hydride pollutants formed in the photolithography process under the action of X-ray irradiation, thereby achieving the treatment of pollutants. That is, the present invention proposes a solution for the popularization and application of metal oxide photoresists in actual photolithography systems, and solves the dual pollution problems of metallic pollution and carbon deposition of metal oxide photoresists containing organic substances.

[0057] In this embodiment, the wavelength of the X-ray is 0.1 nm to 10 nm, and the power is less than or equal to 5 W.

[0058] Excessive X-ray power can affect the performance of optical components or masks and even cause device damage.

[0059] The processing time is determined by the amount of photolithography contaminants. When other conditions are the same, the greater the amount of photolithography contaminants, the longer the processing time.

[0060] In this embodiment, the initial vacuum degree of the vacuum chamber is less than or equal to 10 -5 Pa;

[0061] After the process gas is introduced, the vacuum degree of the vacuum chamber is controlled to be less than or equal to 10 -1 Pa range.

[0062] like Figure 2 As shown, in this embodiment, the process gas is carbon dioxide 6. Under the irradiation of X-rays 31, the carbon dioxide 6 can produce active carbon monoxide molecules 61 and oxygen free radicals 62. The generated active carbon monoxide molecules 61 and oxygen free radicals 62 are used to react with the metal hydride pollutants 52 and the carbon pollutants 51 to produce volatile gaseous molecules.

[0063] The carbon monoxide molecules 61 are reducing and the oxygen free radicals 62 are oxidizing. The carbon monoxide molecules 61 reduce the hydrogenated metal pollutants 52 into volatile metal atom-containing molecules 7, and the oxygen free radicals 62 oxidize the carbon pollutants 51 into volatile carbon dioxide molecules. That is, the volatile substances generated by the treatment are easy to handle.

[0064] The weak oxidizing property of oxygen free radicals 62 and the reducing property of carbon monoxide molecules 61 can avoid over-treatment of the optical element film material while achieving the treatment of pollutants.

[0065] In other embodiments, the process gas may also be oxygen or a mixture of carbon dioxide and oxygen.

[0066] In this embodiment, the device is a mask.

[0067] In other embodiments, the device is an optical element, including an illumination system reflector, a projection objective reflector, and the like.

[0068] In this embodiment, the optical element or the photolithography mask is an optical element or a mask processed by an extreme ultraviolet lithography process.

[0069] In other embodiments, the photolithography process uses an electron beam lithography machine for photolithography, and the photoresist that forms the photolithography contamination is a metal nanoparticle photoresist.

[0070] In this embodiment, the photolithography process uses an extreme ultraviolet lithography machine for photolithography, and the photoresist that forms the photolithography contamination is a metal nanoparticle photoresist.

[0071] The nanoparticles of the metal nanoparticle photoresist are HfO 2 Core or ZrO 2 nuclear.

[0072] HkDJ 2 Core or ZrO 2 The hydrogenated metal pollutant 52 in the core reacts with the carbon dioxide 6 process gas to form an organic molecule containing metal elements HfC x H y O z or ZrC x H y O z .

[0073] like Figure 2 As shown, the present application also provides a photoresist exposure contaminant processing device, which is used to process carbon contaminants 51 and / or metal hydride contaminants 52 on optical elements or mask plates, and the photoresist exposure contaminant processing device includes: a box 1, a vacuum pump 2, an X-ray source 3 and a process gas source 4;

[0074] A vacuum chamber 11 is formed in the box body 1, and the vacuum chamber 11 is used to place the device 5 to be processed and provide a reaction space for the processing;

[0075] The vacuum pump 2 is connected to the vacuum chamber 11, and the vacuum pump 2 is used to evacuate the vacuum chamber 11;

[0076] The process gas source 4 is connected to the vacuum chamber 11 through a pipeline, and the process gas source 4 is used to introduce process gas into the vacuum chamber 11;

[0077] The X-ray source 3 is disposed in the vacuum chamber 11 , and is used to emit X-rays 31 to the device 5 to be processed.

[0078] The photolithography contamination treatment equipment is the equipment required for implementing the above-mentioned photolithography contamination treatment method. The photolithography contamination treatment equipment has a simple structure and is easy to operate. Combined with the above-mentioned operation method, it can further promote the application of metal oxide photoresist in actual photolithography systems.

[0079] In this embodiment, the X-ray source 3 is an X-ray tube, and the X-ray 31 emitted by the X-ray tube is a point light source. The wavelength of the X-ray 31 is 0.01nm~10nm, and the power is less than or equal to 5W;

[0080] The process gas is carbon dioxide6;

[0081] The device to be treated for contamination is an optical element or a mask having carbon contaminants 51 and / or metal hydride contaminants 52 deposited on the surface;

[0082] The housing 1 is also formed with an exhaust port 12, which is used to exhaust the gas after the photoresist exposure contaminant treatment in the vacuum chamber 11;

[0083] A flow meter 41 is provided on the pipeline connecting the process gas source 4 and the vacuum chamber 11 .

[0084] The flow meter 41 is used to monitor and control the flow of the process gas to ensure the normal operation and safety of the system.

[0085] In other embodiments, the process gas is oxygen or a mixture of carbon dioxide 6 and oxygen.

[0086] In this embodiment, the photolithography process uses an extreme ultraviolet lithography machine for photolithography, and the photoresist that forms the photolithography contamination is a metal nanoparticle photoresist.

[0087] The present application also provides a photolithography machine, which includes a vacuum chamber 11 and a process gas source 4. An X-ray source 3 is disposed in the vacuum chamber 11.

[0088] The X-ray source 3 is used to emit X-rays 31 to the optical element or mask to be processed;

[0089] The process gas source 4 is in communication with the vacuum chamber 11 , and the process gas source 4 is used to introduce process gas into the vacuum chamber 11 .

[0090] In this embodiment, the lithography machine is an extreme ultraviolet (EUV) lithography machine, and the corresponding photoresist is a metal nanoparticle photoresist.

[0091] In other embodiments, the lithography machine may also be an electron beam lithography machine, and the corresponding photoresist may be a metal nanoparticle photoresist.

[0092] That is, in actual use, by setting an X-ray source and introducing a process gas source in the vacuum chamber of the lithography machine, after the optical elements or masks with deposited carbon pollutants and / or metal hydride pollutants are subjected to lithography processing or electron beam lithography process by an extreme ultraviolet lithography machine, they can be directly processed in the vacuum chamber, thereby simplifying the steps of removing and reinstalling the optical elements or masks and greatly improving the operating efficiency.

[0093] In this embodiment, an exhaust port for exhausting the gas after the pollutant treatment is disposed on the vacuum chamber.

[0094] In actual use, the vacuum chamber may be a photolithography chamber.

[0095] The above description is only a preferred embodiment of the present invention, and does not limit the patent protection scope of the present invention. Any equivalent structural transformation made by using the contents of the present invention and the drawings, directly or indirectly used in other related technical fields, is also included in the protection scope of the present invention.

Claims

1. A method for treating photoresist exposure contaminants, characterized in that: The steps include: Providing a vacuum chamber, wherein a device to be processed is arranged in the vacuum chamber, and contaminants formed by a photoresist exposure process are deposited on the device, wherein the contaminants include carbon contaminants and / or metal hydride contaminants; continuously introducing a process gas into the vacuum chamber; Providing X-rays, wherein the X-rays are used to excite the process gas and generate active species from the process gas, wherein the active species are used to react with the carbon pollutants and / or the metal hydride pollutants on the device to be processed to generate volatile gaseous compounds; exhausting volatile gaseous compounds from the vacuum chamber; The process gas is carbon dioxide, which can generate active carbon monoxide molecules and oxygen free radicals under the irradiation of the X-rays. The generated active carbon monoxide molecules and oxygen free radicals are used to react with the metal hydride pollutants and the carbon pollutants to generate volatile gaseous molecules.

2. A method for treating photoresist exposure contaminants as claimed in claim 1, characterized in that: The wavelength of the X-ray is 0.1nm~10nm, and the power is less than or equal to 5W.

3. A method for treating photoresist exposure contaminants as claimed in claim 1, characterized in that: The initial vacuum degree of the vacuum chamber is less than or equal to 10 -5 Pa; After the process gas is introduced, the vacuum degree of the vacuum chamber is controlled to be less than or equal to 10 -1 Pa range.

4. A method for treating photoresist exposure contaminants as claimed in claim 1, characterized in that: The device is an optical element or a mask.

5. The method for treating photoresist exposure contaminants according to claim 1, characterized in that: The photoresist exposure process uses an extreme ultraviolet lithography machine for exposure, and the photoresist that forms the photoresist exposure contaminants is a metal nanoparticle photoresist.

6. A photoresist exposure contaminant processing device, used for processing carbon contaminants and / or metal hydride contaminants on optical elements or mask plates, characterized in that: The photoresist exposure contaminant processing equipment comprises: a box, a vacuum pump, an X-ray source and a process gas source; A vacuum chamber is formed in the box body, and the vacuum chamber is used to place the device to be processed and provide a reaction space for the processing; The vacuum pump is connected to the vacuum chamber, and the vacuum pump is used to evacuate the vacuum chamber; The process gas source is connected to the vacuum chamber through a pipeline, and the process gas source is used to introduce process gas into the vacuum chamber; The X-ray source is disposed in the vacuum chamber, and the X-ray source is used to emit X-rays to the device to be processed; The process gas is carbon dioxide, which can generate active carbon monoxide molecules and oxygen free radicals under the irradiation of the X-rays. The generated active carbon monoxide molecules and oxygen free radicals are used to react with the metal hydride pollutants and the carbon pollutants to generate volatile gaseous molecules.

7. The device for treating photoresist exposure contaminants as claimed in claim 6, characterized in that: The X-ray source is an X-ray tube, the X-rays emitted by the X-ray tube are point light sources, the wavelength of the X-rays is 0.01nm~10nm, and the power is less than or equal to 5W; The process gas is carbon dioxide; The device to be treated for contamination is an optical element or a mask having carbon contaminants and / or metal hydride contaminants deposited on the surface; The box body is also formed with an exhaust port, and the exhaust port is used to discharge the gas in the vacuum chamber after the photoresist exposure contaminant treatment; A flow meter is provided on the pipeline connecting the process gas source and the vacuum chamber.

8. A photolithography machine, characterized in that: The photolithography machine comprises a vacuum chamber and a process gas source, wherein an X-ray source is arranged in the vacuum chamber. The X-ray source is used to emit X-rays to an optical element or a mask to be processed, where the optical element or the mask to be processed has carbon contaminants and / or metal hydride contaminants; The process gas source is in communication with the vacuum chamber, and the process gas source is used to introduce process gas into the vacuum chamber; The process gas is carbon dioxide, which can generate active carbon monoxide molecules and oxygen free radicals under the irradiation of the X-rays. The generated active carbon monoxide molecules and oxygen free radicals are used to react with the metal hydride pollutants and the carbon pollutants to generate volatile gaseous molecules.

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