Double-sided coated tube PECVD graphite boat structure

Abstract

The application discloses a double-sided coating tube type PECVD graphite boat structure and belongs to the technical field of solar cell coating. The graphite boat structure comprises a first insulating side plate, a second insulating side plate, a conductive module and a silicon wafer group. The conductive module is connected between the first insulating side plate and the second insulating side plate and comprises a pair of first conductive rods and a pair of second conductive rods which are distributed in a diagonal line. The first conductive rods are arranged in a diagonal line, and the second conductive rods are arranged in a diagonal line. Insulating areas and conductive areas are alternately arranged on the first conductive rods and the second conductive rods. The insulating areas of the first conductive rods correspond to the conductive areas of the second conductive rods. The application can realize double-sided coating without changing the process and without taking out the graphite boat, reduces the frequency of automatic loading and unloading of the wafer, improves the safety of the wafer during the coating process and improves the appearance of the finished wafer.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of solar cell coating, in particular to a double-sided coating tube type PECVD graphite boat structure. BACKGROUND

[0002] At present, in the production process of PERC, TOPCON, HJT and other solar cell wafers, at least two coating processes are required. In the coating process, the silicon wafer is inserted into the gap between the boat pages of the graphite boat and fixed on the surface of the boat page through the clamping point. Then the graphite boat is placed in the coating equipment to form the required film layer on the surface of the silicon wafer by plasma enhanced chemical vapor deposition (PECVD).

[0003] When the conventional graphite boat is used for the process, only single-sided coating can be achieved. When double-sided coating is required, the traditional method needs to be processed twice, that is, one side is coated first and then the other side is coated. After single-sided coating, the silicon wafer is taken out from the graphite boat by the automatic loading and unloading machine, then the other side is coated after being turned over, and the front and back sides are coated separately. On the one hand, the total process time is twice the single process time, on the other hand, the number of graphite boat temperature rising and falling into and out of the furnace tube is increased, the use frequency of the graphite boat is reduced, and the cleaning frequency is increased. On the other hand, the process of external automatic wafer turning is also increased. This process not only consumes time, but also increases the risk of silicon wafer friction and scratching, and exposes the risk of contamination. Therefore, the traditional coating method greatly increases the production cost and the risk of broken wafers in the process.

[0004] Therefore, it is urgent to provide a double-sided coating tube type PECVD graphite boat structure to solve the above problems. SUMMARY

[0005] The present application provides a double-sided coating tube type PECVD graphite boat structure, which can realize double-sided coating without changing the process and without taking the graphite boat out of the tube, reducing the number of automatic loading and unloading of wafers, reducing the broken wafer rate, improving the safety of the coating process, and improving the appearance of the finished cell wafer.

[0006] According to some embodiments, the present application provides a double-sided coating tube type PECVD graphite boat structure, comprising: a first insulating side plate, a second insulating side plate, a conductive module and a silicon wafer group, wherein; the first insulating side plate and the second insulating side plate are arranged opposite along a first direction; the conductive module is connected between the first insulating side plate and the second insulating side plate, and comprises a pair of first conductive rods and a pair of second conductive rods distributed in a diagonal line, the first conductive rods are arranged in a diagonal line, and the second conductive rods are arranged in a diagonal line; the first conductive rods and the second conductive rods are alternately provided with insulating areas and conductive areas, and the insulating areas of the first conductive rods correspond to the conductive areas of the second conductive rods.

[0007] Optionally, the plurality of groups of the conductive module are arranged in sequence between the first insulating side plate and the second insulating side plate along a second direction, and the second direction is perpendicular to the first direction.

[0008] Optionally, the first insulating side plate is externally provided with a first conductive module connected to the first electrode, and the second insulating side plate is externally provided with a second conductive module connected to the second electrode; the first conductive rod in each group of the conductive module is connected to the first conductive module, and the second conductive rod in each group of the conductive module is connected to the second conductive module.

[0009] Optionally, the first conductive module comprises a first front conductive segment and a first side conductive segment electrically connected to the first front conductive segment, the first side conductive segment is arranged on a side of the first insulating side plate away from the second insulating side plate and extends along the track of the first conductive rod, and the first conductive rod is connected to the first side conductive segment; the first front conductive segment is arranged at the upper position of the end of the first insulating side plate and the second insulating side plate and is electrically connected to the first electrode.

[0010] Optionally, the first conductive module is arranged in a segmented combined structure or an integral whole structure.

[0011] Optionally, the second conductive module comprises a second front conductive segment and a second side conductive segment electrically connected to the second front conductive segment, the second side conductive segment is arranged on a side of the second insulating side plate away from the first insulating side plate and extends along the track of the second conductive rod, and the second conductive rod is connected to the second side conductive segment; the second front conductive segment is arranged at the lower position of the end of the first insulating side plate and the second insulating side plate and is electrically connected to the second electrode.

[0012] Optionally, the second conductive module is arranged in a segmented combined structure or an integral whole structure.

[0013] Optionally, the conductive area on the first conductive rod and the second conductive rod is arranged as a conductive ring, and the insulating area on the first conductive rod and the second conductive rod is arranged as an insulating ring.

[0014] Optionally, the material of the first conductive rod and the second conductive rod comprises but is not limited to one or more of graphite, aluminum or alloy material, wherein the center of the first conductive rod and the second conductive rod is a ceramic rod of insulating ceramic material.

[0015] Optionally, an insulating support rod is further connected between the first insulating side plate and the second insulating side plate, and the insulating support rod is located at a bottom position between the first conductive rod and the second conductive rod of each group of the conductive module, for supporting the silicon wafer.

[0016] At least has the following beneficial effects:

[0017] The silicon wafer is inserted between a pair of first conductive rods and a pair of second conductive rods distributed in a diagonal cross manner, and the front surface and the back surface of the silicon wafer are not shielded. After alternating current power is connected between different electrodes, adjacent two silicon wafers form alternating positive and negative electrodes, and an alternating electric field appears between adjacent silicon wafers in each silicon wafer group. The reaction gas between adjacent silicon wafers is ionized into positive and negative ions, which are alternately deposited on the surface of adjacent silicon wafers under the action of the alternating electric field to form the required film layer. The design structure of the graphite boat of the application realizes single-process double-sided coating without changing the process and without the graphite boat out of the pipe, thereby shortening the process time of the product process, improving the production capacity, avoiding the transfer of battery sheet products in the automatic loading and unloading turning equipment, reducing the possibility of product contamination and transportation damage, improving the quality of the film layer and the battery sheet yield, saving the number of times of graphite boat temperature rising and falling in and out of the furnace pipe, prolonging the service life of the graphite boat, reducing the cleaning frequency of the graphite boat, and saving the production cost. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application or in the prior art, the drawings needed in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0019] Figure 1 is a structure diagram of the double-sided coating tubular PECVD graphite boat structure in the embodiment;

[0020] Figure 2 is a partial diagram of the double-sided coating tubular PECVD graphite boat structure in the embodiment;

[0021] Figure 3 is a top view of the double-sided coating tubular PECVD graphite boat structure in the embodiment;

[0022] Figure 4 is a left view of the double-sided coating tubular PECVD graphite boat structure in the embodiment;

[0023] Figure 5 is a right view of the double-sided coating tubular PECVD graphite boat structure in the embodiment;

[0024] Figure 6 is a cross-sectional view of a double-sided coating tube type PECVD graphite boat structure in the embodiment;

[0025] Figure 7 is a schematic view of the conductive rod in the embodiment, in which a conductive ring and an insulating ring are arranged on the conductive rod;

[0026] Figure 8 is a schematic view of the conductive ring in the embodiment, in which a clamping point structure is arranged on the conductive ring;

[0027] Figure 9 is a schematic view of the insulating ring in the embodiment, in which a clamping point structure is arranged on the insulating ring.

[0028] The drawings show that the double-sided coating tube type PECVD graphite boat structure comprises a first insulating side plate 1, a second insulating side plate 2, and a conductive module 3. The first insulating side plate 1 and the second insulating side plate 2 are arranged opposite to each other along a first direction x and are spaced apart. The conductive module 3 is connected between the first insulating side plate 1 and the second insulating side plate 2 and comprises a pair of first conductive rods 31 and a pair of second conductive rods 32 arranged in a diagonal line. The first conductive rods 31 are arranged in a diagonal line, and the second conductive rods 32 are arranged in a diagonal line. Insulating areas and conductive areas are alternately arranged on the first conductive rods 31 and the second conductive rods 32. The insulating areas of the first conductive rods 31 correspond to the conductive areas of the second conductive rods 32. DETAILED DESCRIPTION

[0029] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the embodiments of the present application will be described in detail below with reference to the drawings. However, those skilled in the art can understand that, in the embodiments of the present application, many technical details are presented in order to make the readers better understand the present application. However, the technical solutions claimed by the present application can be implemented even without these technical details and based on various changes and modifications of the following embodiments. The division of the following embodiments is for the convenience of description, and should not constitute any limitation on the specific implementation of the present application. The embodiments can be combined with each other and cited to each other on the premise of not being contradictory.

[0030] The double-sided coating tube type PECVD graphite boat structure provided by the embodiment will be described in detail below with reference to the drawings. As shown in FIGS. 1 to 3, Figure 1 Figure 2 The double-sided coating tube type PECVD graphite boat structure comprises a first insulating side plate 1, a second insulating side plate 2, and a conductive module 3. The first insulating side plate 1 and the second insulating side plate 2 are arranged opposite to each other along a first direction x and are spaced apart. The conductive module 3 is connected between the first insulating side plate 1 and the second insulating side plate 2 and comprises a pair of first conductive rods 31 and a pair of second conductive rods 32 arranged in a diagonal line. The first conductive rods 31 are arranged in a diagonal line, and the second conductive rods 32 are arranged in a diagonal line. Insulating areas and conductive areas are alternately arranged on the first conductive rods 31 and the second conductive rods 32. The insulating areas of the first conductive rods 31 correspond to the conductive areas of the second conductive rods 32. ​

[0031] In the embodiment, the pair of first conductive rods 31 and the pair of second conductive rods 32 define a space in the shape of a generally cuboid, in use, a group of silicon wafer groups 4 is placed in the space, and a plurality of silicon wafers 41 are arranged in sequence along the first direction, the front surface and the back surface of each of the adjacent two silicon wafers 41 are not shielded, in the adjacent two silicon wafers 41, one is connected with the conductive area of the first conductive rod 31, and the other is connected with the conductive area of the second conductive rod 32, the first conductive rod 31 and the second conductive rod 32 are connected with different electrodes respectively, when alternating current is input between the different electrodes, the adjacent two silicon wafers 41 can form alternating positive and negative electrodes, so that the reaction gas between the adjacent silicon wafers 41 is ionized into positive and negative ions, and the positive and negative ions are alternately deposited on the surface of the adjacent silicon wafers 41 under the action of the alternating electric field, thereby forming the required film layer. Therefore, during the film coating, the plasma can be deposited on the front surface and the back surface of the silicon wafer 41 respectively. The graphite boat structure of the present application realizes double-sided film coating of the silicon wafer 41 in a single process without changing the process and without the graphite boat entering and exiting the pipe. Compared with the conventional graphite boat double-sided film coating which needs to be carried out twice, the graphite boat structure in the embodiment shortens the process time of the product process, and the double-sided film coating realized by a single process also avoids the transfer of the battery piece product in the automatic loading and unloading turnover equipment, reduces the possibility of product contamination and transportation damage, improves the quality of the film layer and the yield of the battery piece, saves the number of times of graphite boat heating and cooling in and out of the furnace pipe, prolongs the service life of the graphite boat, reduces the cleaning frequency of the graphite boat, saves the production cost, and improves the production capacity.

[0032] In addition, the different electrodes in the conductive module 3 in the embodiment are arranged in a diagonal cross distribution, and the electric field is driven by the potential energy between the two different electrodes. During the glow period, the ions can be more uniformly distributed and diffused. When the positive and negative electrodes are diagonally distributed, the plasma field distribution is more uniform, ensuring the uniformity of the film coating process. However, the traditional electrodes are distributed on the same side, which can make the plasma field be distributed on one side of the silicon wafer 41, resulting in uneven electric field between the silicon wafers 41 and uneven film coating effect.

[0033] In the embodiment, it should be noted that the conductive module 3 is provided in multiple groups, and the multiple groups of conductive modules 3 are arranged in sequence between the first insulating side plate 1 and the second insulating side plate 2 along the second direction y, and the second direction y is perpendicular to the first direction x. Therefore, by arranging the multiple groups of conductive modules 3, the double-sided film coating of the multiple silicon wafer groups 4 can be realized at one time, thereby improving the production efficiency. In the embodiment, the first direction x is arranged to be parallel to the width direction of the first insulating side plate 1 and the second insulating side plate 2, and the second direction y is arranged to be parallel to the length direction of the first insulating side plate 1 and the second insulating side plate 2.

[0034] Since the plurality of groups of conductive modules 3 are arranged in sequence along the second direction y in the embodiment, the conductive rods are divided into two rows, the upper row and the lower row. The conductive rods in the upper row are arranged in sequence in an alternating manner according to the first conductive rods 31 and the second conductive rods 32. Similarly, the conductive rods in the lower row are arranged in sequence in an alternating manner according to the second conductive rods 32 and the first conductive rods 31. Thus, two adjacent first conductive rods 31 and second conductive rods 32 in the upper row and the lower row together form a wafer insertion area for inserting the silicon wafer 41. In the wafer insertion area, the first conductive rods 31 and the second conductive rods 32 of the same polarity are arranged diagonally.

[0035] Referring to Figure 1 , Figure 3 It should be further noted that the first conductive module 5 connected to the first electrode is arranged outside the first insulating side plate 1. All the first conductive rods 31 between the first insulating side plate 1 and the second insulating side plate 2 are electrically connected to the first conductive module 5. The second conductive module 6 connected to the second electrode is arranged outside the second insulating side plate 2. All the second conductive rods 32 between the first insulating side plate 1 and the second insulating side plate 2 are electrically connected to the second conductive module 6. The first electrode can be a positive electrode or a negative electrode, and the second electrode can also be a positive electrode or a negative electrode. However, the polarities of the first electrode and the second electrode should be opposite.

[0036] Referring to Figure 1 , Figure 3 , Figure 4 In an implementable manner, the first conductive module 5 includes a first front conductive segment 51 and a first side conductive segment 52. The first front conductive segment 51 and the first side conductive segment 52 are connected to each other. The first front conductive segment 51 is arranged at the upper position of the end portion of both the first insulating side plate 1 and the second insulating side plate 2, and is used for electrically connecting to the external first electrode. The first side conductive segment 52 is arranged on the side of the first insulating side plate 1 away from the second insulating side plate 2, and extends along the arrangement track of the first conductive rods 31. The end portion of the first conductive rod 31 is arranged outside the first insulating side plate 1 and is electrically connected to the first side conductive segment 52.

[0037] In an example, the extension of the first side conductive segment 52 along the arrangement track of the first conductive rods 31 can be specifically as follows: the first side conductive segment 52 is divided into a plurality of Z-shaped segments. The plurality of Z-shaped segments are connected in sequence end to end. Two ends of each Z-shaped segment correspond to two first conductive rods 31 arranged diagonally. Thus, the outermost first conductive rod 31 is connected to one end of the outermost Z-shaped segment. The first conductive rods 31 between the two ends are sequentially connected to the positions where the Z-shaped segments are connected to each other. Of course, the first side conductive segment 52 can also be divided into other shapes, as long as all the segmented structures are connected into a whole.

[0038] Therefore, the first conductive module 5 can be arranged as a segmented combination structure or an integral whole structure in the embodiment, which is not specifically limited in the embodiment. Since the first conductive rods 31 are arranged in a diagonal manner between the first and second insulating side plates 1 and 2 in the embodiment, the first conductive module 5 is preferably arranged as a segmented combination structure, that is, the first side conductive segment 52 is divided into a plurality of Z-shaped segments, so as to be combined according to the diagonal arrangement of the first conductive rods 31.

[0039] Referring to FIG. 1, Figure 1 , Figure 3 , Figure 5 As shown in FIG. 1, in an implementable manner, the second conductive module 6 includes a second front conductive segment 61 and a second side conductive segment 62, the second front conductive segment 61 and the second side conductive segment 62 are connected to each other, the second front conductive segment 61 is arranged at an upper position of an end of the first and second insulating side plates 1 and 2, and is used for electrically connecting to an external second electrode, and the second side conductive segment 62 is arranged on a side of the second insulating side plate 2 away from the first insulating side plate 1, and extends along an arrangement track of the second conductive rods 32, and ends of the second conductive rods 32 are arranged outside the second insulating side plate 2 and are electrically connected to the second side conductive segment 62.

[0040] In an example, the second side conductive segment 62 extending along the arrangement track of the second conductive rods 32 can specifically be that the second side conductive segment 62 is divided into a plurality of Z-shaped segments, the plurality of Z-shaped segments are sequentially connected end to end, and two ends of each Z-shaped segment correspond to two second conductive rods 32 arranged in a diagonal manner, so that an outermost second conductive rod 32 is connected to one end of an outermost Z-shaped segment, and then second conductive rods 32 between the two ends are sequentially connected to positions where the Z-shaped segments are connected to each other. Of course, the second side conductive segment 62 can also be divided into other shapes, as long as all the segmented structures are connected into a whole.

[0041] Therefore, the second conductive module 6 can be arranged as a segmented combination structure or an integral whole structure in the embodiment, which is not specifically limited in the embodiment. Since the second conductive rods 32 are arranged in a diagonal manner between the first and second insulating side plates 1 and 2 in the embodiment, the second conductive module 6 is preferably arranged as a segmented combination structure, that is, the second side conductive segment 62 is divided into a plurality of Z-shaped segments, so as to be combined according to the diagonal arrangement of the second conductive rods 32.

[0042] Of course, in other embodiments, the first and second conductive modules 5 and 6 can also have other structures, as long as all the first conductive rods 31 are connected in series with the external first electrode and all the second conductive rods 32 are connected in series with the external second electrode, and the present embodiment is not limited in this regard.

[0043] Referring to Figure 2 , Figure 6 and Figure 7 , in the present embodiment, it should also be noted that the conductive regions on the first and second conductive rods 31 and 32 are provided as conductive rings 7, and the insulating regions on the first and second conductive rods 31 and 32 are provided as insulating rings 8. The conductive rings 7 and insulating rings 8 on the first and second conductive rods 31 and 32 are arranged alternately and closely connected in sequence, and the conductive rings 7 and insulating rings 8 on the first conductive rods 31 are staggered with the conductive rings 7 and insulating rings 8 on the second conductive rods 32. For example, the end of the first conductive rod 31 is arranged from the conductive ring 7, followed by the insulating ring 8, the conductive ring 7, and so on, while the end of the second conductive rod 32 in the same direction is arranged from the insulating ring 8, followed by the conductive ring 7, the insulating ring 8, and so on. That is, the conductive rings 7 on the first conductive rods 31 in the same conductive module 3 are arranged diagonally, and the insulating rings 8 on the second conductive rods 32 are arranged diagonally.

[0044] Therefore, when the silicon wafer 41 is inserted between the first and second conductive rods 31 and 32, the silicon wafer 41 is electrically connected to the first or second conductive rod 31 through the diagonal conductive ring 7, and adjacent silicon wafers 41 are insulated and separated by the insulating ring 8, thus forming silicon wafers 41 arranged alternately with positive and negative electrodes. For example, two diagonally opposite corners of one silicon wafer 41 are electrically connected to the conductive rings 7 on two diagonally arranged first conductive rods 31, and the other two diagonally opposite corners are insulated and connected to the insulating rings 8 on two diagonally arranged second conductive rods 32. Then, two diagonally opposite corners of the adjacent silicon wafer 41 are electrically connected to the conductive rings 7 on two diagonally arranged second conductive rods 32, and the other two diagonally opposite corners are insulated and connected to the insulating rings 8 on two diagonally arranged first conductive rods 31. In this way, the silicon wafers 41 are arranged alternately with positive and negative electrodes.

[0045] Referring to Figure 2 , Figure 8 and Figure 9As shown, in this embodiment, the silicon wafer 41 is connected to the conductive ring 7 and the insulating ring 8 respectively by means of locking points. V-shaped locking points 101 are symmetrically arranged on the outer walls of the conductive ring 7 and the insulating ring 8. The silicon wafer 41 is inserted into the V-shaped locking points 101 from top to bottom to be inserted between the first conductive rod 31 and the second conductive rod 32. The structure of the V-shaped locking points 101 can ensure that the silicon wafer 41 and the conductive ring 7 form good conductivity.

[0046] In this embodiment, it should also be noted that both the conductive ring 7 and the conductive module are made of graphite to facilitate conductivity, while the insulating ring 8 is made of ceramic.

[0047] The materials of the first conductive rod 31 and the second conductive rod 32 include, but are not limited to, graphite, aluminum or other alloy materials, wherein the center of the first conductive rod 31 and the second conductive rod 32 is a ceramic rod made of insulating ceramic material, and the use of ceramic rod can improve the structural strength of the conductive rod.

[0048] Reference Figure 1 , Figure 3 As shown in this embodiment, it should also be noted that an insulating support rod 9 is connected between the first insulating side plate 1 and the second insulating side plate 2. The insulating support rod 9 is located at the bottom position between the first conductive rod 31 and the second conductive rod 32 of each set of conductive modules 3, and is used to support the silicon wafer 41. Thus, when the silicon wafer 41 is inserted from top to bottom onto two adjacent silicon wafers 41, the bottom is supported on the insulating support rod 9, which can improve the stability of the silicon wafer 41. In one example, the insulating support rod 9 is made of ceramic.

[0049] For the graphite boat structure in this embodiment, there is no need to set up a structure to fix the silicon wafer 41. The first conductive rod 31 and the second conductive rod 32 in the upper and lower rows are used as fixing rods, and the silicon wafer 41 is inserted between the first conductive rod 31 and the second conductive rod 32. At the same time, the bottom insulating support rod 9 is used as the bottom support. Compared with the existing structure, it is simpler and eliminates the structure of fixing the silicon wafer 41.

[0050] The implementation principle of the embodiment is as follows: in the graphite boat structure of the application, the first conductive rods 31 and the second conductive rods 32 are used as fixing rods, the silicon wafer 41 is arranged between two adjacent first conductive rods 31 and second conductive rods 32, and the silicon wafer 41 is electrically connected with the first conductive rod 31 or the second conductive rod 32 through the conductive ring 7, thereby realizing electrical connection with the first conductive module 5 and the second conductive module 6 connected with different electrodes. Thus, after the first conductive module 5 and the second conductive module 6 are connected with alternating current power, the adjacent two silicon wafers 41 form alternating positive and negative electrodes, and an alternating electric field appears between the adjacent silicon wafers 41 on each silicon wafer group 4. The reaction gas between the adjacent silicon wafers 41 is ionized into positive and negative ions, and the positive and negative ions are alternately deposited on the surface of the adjacent silicon wafers 41 under the action of the alternating electric field, thereby forming a required film layer. Compared with the existing graphite boat, the graphite boat structure of the application can realize double-sided film plating in a single process without changing the process and without taking out the graphite boat, thereby effectively shortening the process time of product manufacturing, improving the production capacity, and saving production cost.

[0051] It should be understood that the above specific embodiments of the application are only used for illustrative or explanatory purposes of the principles of the application, and do not constitute a limitation of the application. Therefore, any modification, equivalent replacement, improvement, etc. made without departing from the spirit and scope of the application shall be included in the protection scope of the application. In addition, the appended claims of the application are intended to cover all variations and modifications falling within the scope and boundary of the appended claims or the equivalent forms of such scope and boundary.

Claims

1. A double-sided coated tube PECVD graphite boat structure, characterized in that, The utility model relates to a kind of electrically conductive module and electrically conductive module combination structure, including: First insulating side plate (1), second insulating side plate (2), electrically conductive module (3), wherein; The first insulating side plate (1) and the second insulating side plate (2) are oppositely arranged along the first direction; The electrically conductive module (3) is connected between the first insulating side plate (1) and the second insulating side plate (2), and includes a pair of first electrically conductive rods (31) and a pair of second electrically conductive rods (32) distributed in diagonal lines, the first electrically conductive rod (31) is diagonally arranged, and the second electrically conductive rod (32) is diagonally arranged;Insulating area and conductive area are alternately arranged on the first electrically conductive rod (31), and insulating area and conductive area are alternately arranged on the second electrically conductive rod (32), and the insulating area of the first electrically conductive rod (31) corresponds to the conductive area of the second electrically conductive rod (32); The electrically conductive module (3) is provided as a plurality of groups, and the plurality of groups of electrically conductive modules (3) are sequentially arranged between the first insulating side plate (1) and the second insulating side plate (2) along the second direction, and the second direction is perpendicular to the first direction; The outside of the first insulating side plate (1) is provided with a first electrically conductive module (5) connected to a first electrode, and the outside of the second insulating side plate (2) is provided with a second electrically conductive module (6) connected to a second electrode; The first electrically conductive rod (31) in each group of electrically conductive modules (3) is connected to the first electrically conductive module (5), and the second electrically conductive rod (32) in each group of electrically conductive modules (3) is connected to the second electrically conductive module (6); The first electrically conductive module (5) includes a first front conductive segment (51) and a first side conductive segment (52) electrically connected to the first front conductive segment (51), the first side conductive segment (52) is arranged on the side of the first insulating side plate (1) away from the second insulating side plate (2), and extends along the track of the first electrically conductive rod (31), and the first electrically conductive rod (31) is connected to the first side conductive segment (52);The first front conductive segment (51) is arranged at the upper position of the end of the first insulating side plate (1) and the second insulating side plate (2), and is electrically connected to the first electrode; The second electrically conductive module (6) includes a second front conductive segment (61) and a second side conductive segment (62) electrically connected to the second front conductive segment (61), the second side conductive segment (62) is arranged on the side of the second insulating side plate (2) away from the first insulating side plate (1), and extends along the track of the second electrically conductive rod (32), and the second electrically conductive rod (32) is connected to the second side conductive segment (62);The second front conductive segment (61) is arranged at the lower position of the end of the first insulating side plate (1) and the second insulating side plate (2), and is electrically connected to the second electrode.

2. The double-sided coated tube PECVD graphite boat structure of claim 1, wherein, The first electrically conductive module (5) is provided as a segmented combination structure or an integral whole structure.

3. The double-sided coated tube PECVD graphite boat structure of claim 1, wherein, The second electrically conductive module (6) is provided as a segmented combination structure or an integral whole structure.

4. The double-sided coated tube PECVD graphite boat structure of claim 1, wherein, The conductive area on the first conductive rod (31) and the second conductive rod (32) is arranged as a conductive ring (7); The insulating area on the first conductive rod (31) and the second conductive rod (32) is arranged as an insulating ring (8).

5. The double-sided coated tube PECVD graphite boat structure of claim 4, wherein, The material of the first conductive rod (31) and the second conductive rod (32) includes but is not limited to one or more of graphite, aluminum or alloy materials, wherein the center of the first conductive rod (31) and the second conductive rod (32) is a ceramic rod of insulating ceramic material.

6. The double-sided coated tube PECVD graphite boat structure according to any one of claims 1-5, wherein, The first insulating side plate (1) and the second insulating side plate (2) are also connected with an insulating support rod (9) corresponding to the bottom position between the first conductive rod (31) and the second conductive rod (32) of each group of the conductive module (3), for supporting the silicon wafer (41).

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