A special calendered copper foil for graphene and a method for manufacturing the same

By optimizing the copper foil preparation process, controlling the rolling and annealing temperatures, and combining it with a specific polishing solution, the problems of grain size and surface quality of graphene-specific rolled copper foil were solved, enabling the production of high-quality copper foil suitable for graphene chemical vapor deposition.

CN117696622BActive Publication Date: 2026-04-28CHINALCO DAYE COPPER PLATE & STRIP CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
CHINALCO DAYE COPPER PLATE & STRIP CO LTD
Filing Date
2023-12-11
Publication Date
2026-04-28

AI Technical Summary

Technical Problem

Existing technologies are insufficient for producing high-quality graphene-specific rolled copper foil, especially in terms of grain size and surface quality. This leads to domestic reliance on imported production equipment, making it difficult to meet the requirements of chemical vapor deposition.

Method used

High-quality graphene-specific rolled copper foil is prepared by performing homogenization annealing, rough rolling, cleaning, intermediate annealing, warm rolling, fine rolling, graded annealing and polishing on oxygen-free copper strip, controlling the rolling temperature and annealing temperature, and combining a specific atmosphere protection and polishing solution composition.

Benefits of technology

A rolled copper foil with large grain size and high surface quality was obtained, with an average grain size of 100-150 μm and a surface roughness reduced to 0.01-0.03 μm. It is suitable for the preparation of graphene by chemical vapor deposition and has low production cost.

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Abstract

The application discloses a preparation method of a rolled copper foil, which comprises the following steps: uniformly annealing, rough rolling, cleaning, intermediate annealing, warm rolling, finish rolling, grading annealing and polishing of an oxygen-free copper strip blank in sequence to obtain the rolled copper foil special for graphene; wherein the total deformation of the rough rolling is 85-90%; the opening rolling temperature of the warm rolling is 380-420 DEG C, and the total deformation is 40-50%; the total deformation of the finish rolling is 50-80%; the grading annealing is divided into a high-temperature annealing stage and a low-temperature annealing stage, the annealing temperature of the high-temperature annealing stage is 680-720 DEG C, the holding time is 5-6 h, the annealing temperature of the low-temperature annealing stage is 180-220 DEG C, and the holding time is 2-3 h. The rolled copper foil with large grain size and high surface quality is obtained by adjusting and controlling the rolling temperature, the processing rate and the annealing temperature, the surface roughness is further reduced by polishing, and the prepared rolled copper foil can be used for preparing graphene by a chemical vapor deposition method.
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Description

Technical Field

[0001] This invention belongs to the field of copper processing technology, specifically relating to a graphene-specific rolled copper foil and its preparation method. Background Technology

[0002] Graphene possesses excellent optical, electrical, and mechanical properties, and holds significant promise for applications in materials science, micro / nano fabrication, energy, biomedicine, and drug delivery, making it a revolutionary material for the future. Graphene can be prepared through methods such as mechanical exfoliation, redox reactions, silicon carbide epitaxy, and chemical vapor deposition (CVD). Among these, CVD, using rolled copper foil as a substrate, is simple to operate, highly controllable, and produces large-area, high-quality graphene, making it the most promising preparation method currently available.

[0003] Studies have shown that during the preparation of graphene using chemical vapor deposition (CVD), graphene grows on the surface of rolled copper foil. Surface defects and grain boundaries on the copper foil significantly affect the deposition, nucleation, and growth of graphene. Therefore, rolled copper foil used for graphene preparation requires higher surface quality and larger grain size, placing more stringent demands on the equipment and processes used in its production. Currently, the key technologies for preparing high-precision rolled copper foil specifically for graphene are mainly controlled by countries such as Japan and the United States. Domestic rolled copper foil production equipment largely relies on imports, and improving the level of production equipment is challenging. Therefore, it is necessary to optimize the production process to improve the quality of rolled copper foil specifically for graphene. Summary of the Invention

[0004] To address the shortcomings of existing technologies, the present invention aims to provide a graphene-specific rolled copper foil with high surface quality and large grain size, and a method for its preparation.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] This invention provides a method for preparing rolled copper foil, comprising the following steps:

[0007] The oxygen-free copper strip is subjected to homogenization annealing, rough rolling, cleaning, intermediate annealing, warm rolling, fine rolling, graded annealing and polishing in sequence to obtain the graphene-specific rolled copper foil.

[0008] The total deformation during rough rolling is 85-90%.

[0009] The warm rolling temperature is 380–420°C, and the total deformation is 40–50%.

[0010] The total deformation during finishing rolling is 50-80%;

[0011] The graded annealing is divided into a high-temperature annealing stage and a low-temperature annealing stage. The high-temperature annealing stage has an annealing temperature of 680-720℃ and a holding time of 5-6 hours. The low-temperature annealing stage has an annealing temperature of 180-220℃ and a holding time of 2-3 hours.

[0012] Preferably, the oxygen-free copper strip blank has a thickness of 0.8–1.2 mm, a purity of 99.95–99.995%, and an oxygen content of less than 10 ppm.

[0013] Preferably, the homogenization annealing temperature is 800-900℃, and the holding time is 5-6 hours.

[0014] Preferably, the intermediate annealing temperature is 750–780°C, and the holding time is 5–6 hours.

[0015] Preferably, the annealing is carried out in a bell furnace containing a protective atmosphere of 15-20 wt% CO or H2 and 80-85 wt% Ar.

[0016] Preferably, the cleaning process is as follows: first, alkaline washing with an alkaline concentration of 3-5% and a temperature of 70-80°C; then, acid washing with a sulfuric acid concentration of 10-13% and a temperature of room temperature; followed by passivation treatment with a benzotriazole solution at a concentration of 0.05-0.08 g / L and a temperature of 60-80°C; and finally, rinsing with clean water. The cleaning speed is 30-40 m / min.

[0017] Preferably, the polishing is electrochemical polishing, with a polishing voltage of 1.5–2.5V and a polishing time of 2–5 min. The polishing solution consists of the following components at the following concentrations: 280–360 g / L phosphoric acid, 25–40 g / L sodium citrate, 40–55 g / L ethylene glycol, 3–8 g / L polyvinylpyrrolidone, and 3–5 g / L phenylurea.

[0018] Another aspect of the present invention provides a graphene-specific rolled copper foil, which is prepared using the above-mentioned method for preparing rolled copper foil.

[0019] Preferably, the graphene-specific rolled copper foil has a thickness of 10–30 μm, an average grain size of 100–150 μm, and a surface roughness of 0.01–0.03 μm.

[0020] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0021] This invention obtains rolled copper foil with large grain size and high surface quality by adjusting and controlling the rolling temperature, processing rate, and annealing temperature, with an average grain size of 100-150 μm. Polishing further reduces the surface roughness to 0.01-0.03 μm. The prepared rolled copper foil can be used to prepare graphene by chemical vapor deposition. The preparation method of this invention is simple and has low production cost. Furthermore, using the polishing solution of this invention eliminates the need for acid and alkali cleaning after finishing rolling, reducing the cleaning process. Attached Figure Description

[0022] Figure 1 The image shows the metallographic diagram of the graphene-specific rolled copper foil from Example 1. Detailed Implementation

[0023] The present invention will be further described in detail below with reference to specific embodiments, so that those skilled in the art can more clearly understand the present invention. The examples given are only for explaining the present invention and are not intended to limit the scope of the present invention. In the embodiments of the present invention, unless otherwise specified, all raw material components are commercially available products well known to those skilled in the art; unless specifically specified, the technical means used are all conventional means well known to those skilled in the art.

[0024] This invention provides a method for preparing rolled copper foil, comprising the following steps:

[0025] The oxygen-free copper strip is subjected to homogenization annealing, rough rolling, cleaning, intermediate annealing, warm rolling, fine rolling, graded annealing and polishing in sequence to obtain the graphene-specific rolled copper foil.

[0026] in,

[0027] The total deformation during rough rolling is 85-90%;

[0028] The initial rolling temperature is 380–420℃, and the total deformation is 40–50%.

[0029] The total deformation during finishing rolling is 50-80%;

[0030] Graded annealing is divided into a high-temperature annealing stage and a low-temperature annealing stage. The high-temperature annealing stage has an annealing temperature of 680-720℃ and a holding time of 5-6 hours. The low-temperature annealing stage has an annealing temperature of 180-220℃ and a holding time of 2-3 hours.

[0031] In some preferred embodiments, the oxygen-free copper strip blank has a thickness of 0.8 to 1.2 mm, a purity of 99.95 to 99.995%, and an oxygen content of less than 10 ppm.

[0032] In some preferred embodiments, the homogenization annealing is performed at a temperature of 800–900°C for 5–6 hours.

[0033] In some preferred embodiments, the intermediate annealing temperature is 750–780°C, and the holding time is 5–6 hours.

[0034] In some preferred embodiments, annealing is carried out in a bell furnace containing a protective atmosphere of 15-20 wt% CO or H2 and 80-85 wt% Ar.

[0035] In some preferred embodiments, the cleaning method is as follows: first, alkaline washing with an alkaline concentration of 3-5% and a temperature of 70-80°C; then, acid washing with a sulfuric acid concentration of 10-13% and a temperature of room temperature; followed by passivation treatment with a benzotriazole solution at a concentration of 0.05-0.08 g / L and a temperature of 60-80°C; and finally, rinsing with clean water; the cleaning speed is 30-40 m / min.

[0036] In some preferred embodiments, polishing is electrochemical polishing, with a polishing voltage of 1.5–2.5V and a polishing time of 2–5 min. The polishing solution consists of the following components at the following concentrations: 280–360 g / L phosphoric acid, 25–40 g / L sodium citrate, 40–55 g / L ethylene glycol, 3–8 g / L polyvinylpyrrolidone, and 3–5 g / L phenylurea.

[0037] The graphene-specific rolled copper foil prepared by the above-mentioned method provided in this embodiment of the invention has a thickness of 10-30 μm, an average grain size of 100-150 μm, and a surface roughness of 0.01-0.03 μm.

[0038] The oxygen-free copper strip used in the following specific embodiments and comparative examples of the present invention has a thickness of 0.98 mm, a purity of 99.98%, and an oxygen content of 8.4 ppm.

[0039] Example 1

[0040] The graphene-specific rolled copper foil provided in this embodiment has the following preparation process:

[0041] (1) The oxygen-free copper strip billet was fed into a bell furnace under the protection of an atmosphere containing 15vt%CO and 85vt%Ar for homogenization annealing. The annealing temperature was 850℃ and the holding time was 5h.

[0042] (2) The strip after homogenization and annealing is rough rolled in 7 passes, and the total deformation is 89.8%.

[0043] (3) The rough-rolled strip is cleaned by first alkali washing with an alkali concentration of 5% and a temperature of 70℃; then acid washing with a sulfuric acid concentration of 10% and a temperature of room temperature; then passivation treatment is performed with a benzotriazole solution with a concentration of 0.05g / L and a temperature of 80℃; finally, it is rinsed with clean water; the cleaning speed is 35m / min.

[0044] (4) The cleaned rough-rolled strip is sent into a bell furnace under the protection of an atmosphere containing 15vt%CO and 85vt%Ar for intermediate annealing. The annealing temperature is 780℃, the holding temperature is 5h, and the temperature is reduced to 420℃ before being taken out of the furnace.

[0045] (5) The rough-rolled strip billet that has been annealed in the intermediate furnace is warm-rolled in 5 passes with a total deformation of 45%, and then cooled to room temperature.

[0046] (6) The warm-rolled strip is finished by 5 passes, and the total deformation is 78.2%;

[0047] (7) The finished strip is fed into a bell furnace under the protection of 15vt%CO and 85vt%Ar atmosphere for graded annealing. The graded annealing is divided into a high temperature annealing stage and a low temperature annealing stage. The annealing temperature of the high temperature annealing stage is 720℃ and the holding time is 5h. The annealing temperature of the low temperature annealing stage is 220℃ and the holding time is 2h.

[0048] (8) The finely rolled strip after graded annealing is electrochemically polished. The polishing voltage is 1.5V and the polishing time is 5min. The component concentration of the polishing solution is: 320g / L phosphoric acid, 30g / L sodium citrate, 48g / L ethylene glycol, 5g / L polyvinylpyrrolidone, and 4g / L phenylurea. After polishing, it is washed with deionized water and dried to obtain graphene-specific rolled copper foil.

[0049] The graphene-specific rolled copper foil obtained in this embodiment has a thickness of 12 μm, and the metallographic image is shown below. Figure 1 As shown, the internal structure is dense with uniform grains, with an average grain size of 115 μm, a surface roughness of 0.01 μm, a tensile strength of 352 MPa, and a Vickers hardness of 92 HV.

[0050] Example 2

[0051] The graphene-specific rolled copper foil provided in this embodiment has the following preparation process:

[0052] (1) The oxygen-free copper strip billet was fed into a bell furnace under the protection of an atmosphere containing 20vt%H2 and 80vt%Ar for homogenization annealing. The annealing temperature was 880℃ and the holding time was 5h.

[0053] (2) The strip after homogenization and annealing is rough rolled in 7 passes, and the total deformation is 89.8%.

[0054] (3) The rough-rolled strip is cleaned by first alkali washing with an alkali concentration of 5% and a temperature of 70℃; then acid washing with a sulfuric acid concentration of 10% and a temperature of room temperature; then passivation treatment is performed with a benzotriazole solution with a concentration of 0.05g / L and a temperature of 80℃; finally, it is rinsed with clean water; the cleaning speed is 35m / min.

[0055] (4) The cleaned rough-rolled strip is sent into a bell furnace under the protection of an atmosphere containing 20 vt% H2 and 80 vt% Ar for intermediate annealing. The annealing temperature is 765℃, the holding temperature is 6h, and the temperature is reduced to 420℃ before being taken out of the furnace.

[0056] (5) The rough-rolled strip billet that has been annealed in the intermediate furnace is warm-rolled in 5 passes with a total deformation of 42%, and then cooled to room temperature.

[0057] (6) The warm-rolled strip is finished by 5 passes, and the total deformation is 53.4%.

[0058] (7) The finished strip is fed into a bell furnace under the protection of an atmosphere containing 20vt%H2 and 80vt%Ar for graded annealing. The graded annealing is divided into a high-temperature annealing stage and a low-temperature annealing stage. The annealing temperature of the high-temperature annealing stage is 700℃ and the holding time is 6h. The annealing temperature of the low-temperature annealing stage is 200℃ and the holding time is 2h.

[0059] (8) The finely rolled strip after graded annealing is electrochemically polished. The polishing voltage is 2.5V and the polishing time is 2min. The component concentration of the polishing solution is: 330g / L phosphoric acid, 34g / L sodium citrate, 52g / L ethylene glycol, 6g / L polyvinylpyrrolidone, and 4g / L phenylurea. After polishing, it is washed with deionized water and dried to obtain graphene-specific rolled copper foil.

[0060] The graphene-specific rolled copper foil obtained in this embodiment has a thickness of 27 μm, an average grain size of 105 μm, a surface roughness of 0.02 μm, a tensile strength of 366 MPa, and a Vickers hardness of 97 HV.

[0061] Example 3

[0062] The graphene-specific rolled copper foil provided in this embodiment has the following preparation process:

[0063] (1) The oxygen-free copper strip billet was fed into a bell furnace under the protection of an atmosphere containing 15vt%H2 and 85vt%Ar for homogenization annealing. The annealing temperature was 820℃ and the holding time was 5h.

[0064] (2) The strip after homogenization and annealing is rough rolled in 7 passes, and the total deformation is 89.8%.

[0065] (3) The rough-rolled strip is cleaned by first alkali washing with an alkali concentration of 5% and a temperature of 70℃; then acid washing with a sulfuric acid concentration of 10% and a temperature of room temperature; then passivation treatment is performed with a benzotriazole solution with a concentration of 0.05g / L and a temperature of 80℃; finally, it is rinsed with clean water; the cleaning speed is 35m / min.

[0066] (4) The cleaned rough-rolled strip is sent into a bell furnace under the protection of an atmosphere containing 15vt%H2 and 85vt%Ar for intermediate annealing. The annealing temperature is 750℃, the holding temperature is 6h, and the temperature is reduced to 410℃ before being taken out of the furnace.

[0067] (5) The rough-rolled strip billet that has been annealed in the intermediate furnace is warm-rolled in 5 passes with a total deformation of 48%, and then cooled to room temperature.

[0068] (6) The warm-rolled strip is finished rolled in 5 passes, with a total deformation of 65.4%.

[0069] (7) The finished strip is fed into a bell furnace under the protection of an atmosphere containing 15vt%H2 and 85vt%Ar for graded annealing. The graded annealing is divided into a high-temperature annealing stage and a low-temperature annealing stage. The annealing temperature of the high-temperature annealing stage is 690℃ and the holding time is 6h. The annealing temperature of the low-temperature annealing stage is 180℃ and the holding time is 3h.

[0070] (8) Electrochemical polishing was performed on the finely rolled strip after graded annealing. The polishing voltage was 1.5V and the polishing time was 5min. The component concentration of the polishing solution was: 298g / L phosphoric acid, 38g / L sodium citrate, 52g / L ethylene glycol, 7g / L polyvinylpyrrolidone, and 3g / L phenylurea. After polishing, the strip was washed with deionized water and dried to obtain graphene-specific rolled copper foil.

[0071] The graphene-specific rolled copper foil obtained in this embodiment has a thickness of 18 μm, an average grain size of 110 μm, a surface roughness of 0.01 μm, a tensile strength of 358 MPa, and a Vickers hardness of 90 HV.

[0072] Comparative Example 1

[0073] The comparative example provides a rolled copper foil, and the preparation process is as follows:

[0074] (1) The oxygen-free copper strip billet was fed into a bell furnace under the protection of an atmosphere containing 15vt%CO and 85vt%Ar for homogenization annealing. The annealing temperature was 850℃ and the holding time was 5h.

[0075] (2) The strip after homogenization and annealing is rough rolled in 7 passes, and the total deformation is 89.8%.

[0076] (3) The rough-rolled strip is cleaned by first alkali washing with an alkali concentration of 5% and a temperature of 70℃; then acid washing with a sulfuric acid concentration of 10% and a temperature of room temperature; then passivation treatment is performed with a benzotriazole solution with a concentration of 0.05g / L and a temperature of 80℃; finally, it is rinsed with clean water; the cleaning speed is 35m / min.

[0077] (4) The cleaned rough-rolled strip is sent into a bell furnace under the protection of an atmosphere containing 15vt%CO and 85vt%Ar for intermediate annealing at a temperature of 780℃ for 5 hours.

[0078] (5) The rough-rolled strip after intermediate annealing is finished by 8 passes and the total deformation is 88%.

[0079] (6) The finished strip is fed into a bell furnace under the protection of an atmosphere containing 15vt%CO and 85vt%Ar for graded annealing. The graded annealing is divided into a high-temperature annealing stage and a low-temperature annealing stage. The annealing temperature of the high-temperature annealing stage is 720℃ and the holding time is 5h. The annealing temperature of the low-temperature annealing stage is 220℃ and the holding time is 2h.

[0080] (7) The finely rolled strip after graded annealing is electrochemically polished. The polishing voltage is 1.5V and the polishing time is 5min. The component concentration of the polishing solution is: 320g / L phosphoric acid, 30g / L sodium citrate, 48g / L ethylene glycol, 5g / L polyvinylpyrrolidone, and 4g / L phenylurea. After polishing, it is washed with deionized water and dried to obtain rolled copper foil.

[0081] The rolled copper foil obtained in this comparative example has a thickness of 12 μm, an average grain size of 25 μm, a surface roughness of 0.03 μm, a tensile strength of 342 MPa, and a Vickers hardness of 102 HV. The difference between this comparative example and Example 1 is that the rolling process used is cold rolling, and the grain growth during the finished product annealing process is limited, making it difficult to obtain a larger grain size.

[0082] Comparative Example 2

[0083] The comparative example provides a rolled copper foil, and the preparation process is as follows:

[0084] (1) The oxygen-free copper strip billet was fed into a bell furnace under the protection of an atmosphere containing 15vt%CO and 85vt%Ar for homogenization annealing. The annealing temperature was 850℃ and the holding time was 5h.

[0085] (2) The strip after homogenization and annealing is rough rolled in 7 passes, and the total deformation is 89.8%.

[0086] (3) The rough-rolled strip is cleaned by first alkali washing with an alkali concentration of 5% and a temperature of 70℃; then acid washing with a sulfuric acid concentration of 10% and a temperature of room temperature; then passivation treatment is performed with a benzotriazole solution with a concentration of 0.05g / L and a temperature of 80℃; finally, it is rinsed with clean water; the cleaning speed is 35m / min.

[0087] (4) The cleaned rough-rolled strip is sent into a bell furnace under the protection of an atmosphere containing 15vt%CO and 85vt%Ar for intermediate annealing. The annealing temperature is 780℃, the holding temperature is 5h, and the temperature is reduced to 420℃ before being taken out of the furnace.

[0088] (5) The rough-rolled strip billet that has been annealed in the intermediate furnace is warm-rolled in 5 passes with a total deformation of 45%, and then cooled to room temperature.

[0089] (6) The warm-rolled strip is finished by 5 passes, and the total deformation is 78.2%;

[0090] (7) The finished strip is sent into a bell furnace under the protection of an atmosphere containing 15vt%CO and 85vt%Ar for finished product annealing. The annealing temperature is 720℃ and the holding time is 6h.

[0091] (8) The finished annealed fine-rolled strip is electrochemically polished. The polishing voltage is 1.5V and the polishing time is 5min. The component concentration of the polishing solution is: 320g / L phosphoric acid, 30g / L sodium citrate, 48g / L ethylene glycol, 5g / L polyvinylpyrrolidone, and 4g / L phenylurea. After polishing, it is washed with deionized water and dried to obtain rolled copper foil.

[0092] The rolled copper foil obtained in this comparative example has a thickness of 12 μm, an average grain size of 70 μm, a surface roughness of 0.05 μm, a tensile strength of 343 MPa, and a Vickers hardness of 112 HV. The difference between this comparative example and Example 1 is that the final annealing of the finished product only uses high-temperature annealing. Although the grain size has increased, the surface roughness is also larger.

[0093] Comparative Example 3

[0094] The comparative example provides a graphene-specific rolled copper foil, and its preparation process is as follows:

[0095] (1) The oxygen-free copper strip billet was fed into a bell furnace under the protection of an atmosphere containing 15vt%CO and 85vt%Ar for homogenization annealing. The annealing temperature was 850℃ and the holding time was 5h.

[0096] (2) The strip after homogenization and annealing is rough rolled in 7 passes, and the total deformation is 89.8%.

[0097] (3) The rough-rolled strip is cleaned by first alkali washing with an alkali concentration of 5% and a temperature of 70℃; then acid washing with a sulfuric acid concentration of 10% and a temperature of room temperature; then passivation treatment is performed with a benzotriazole solution with a concentration of 0.05g / L and a temperature of 80℃; finally, it is rinsed with clean water; the cleaning speed is 35m / min.

[0098] (4) The cleaned rough-rolled strip is sent into a bell furnace under the protection of an atmosphere containing 15vt%CO and 85vt%Ar for intermediate annealing. The annealing temperature is 780℃, the holding temperature is 5h, and the temperature is reduced to 420℃ before being taken out of the furnace.

[0099] (5) The rough-rolled strip billet that has been annealed in the intermediate furnace is warm-rolled in 5 passes with a total deformation of 45%, and then cooled to room temperature.

[0100] (6) The warm-rolled strip is finished by 5 passes, and the total deformation is 78.2%;

[0101] (7) The finished strip is fed into a bell furnace under the protection of 15vt%CO and 85vt%Ar atmosphere for graded annealing. The graded annealing is divided into a high temperature annealing stage and a low temperature annealing stage. The annealing temperature of the high temperature annealing stage is 720℃ and the holding time is 5h. The annealing temperature of the low temperature annealing stage is 220℃ and the holding time is 2h.

[0102] (8) The finely rolled strip after graded annealing is electrochemically polished. The polishing voltage is 1.5V and the polishing time is 5min. The polishing solution is composed of 98% phosphoric acid and ethylene glycol in a volume ratio of 3:1. After polishing, it is cleaned with deionized water and dried to obtain rolled copper foil.

[0103] The rolled copper foil obtained in this comparative example has a thickness of 12 μm, an average grain size of 115 μm, a surface roughness of 0.05 μm, a tensile strength of 351 MPa, and a Vickers hardness of 94 HV. The difference between this comparative example and Example 1 is that the polishing solution of the graded annealed fine-rolled strip was used for electrochemical polishing. Under the same polishing conditions, the surface roughness could only reach 0.05 μm.

[0104] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for preparing rolled copper foil, characterized in that, Includes the following steps: The oxygen-free copper strip is subjected to homogenization annealing, rough rolling, cleaning, intermediate annealing, warm rolling, fine rolling, graded annealing and polishing in sequence to obtain graphene-specific rolled copper foil. The total deformation during rough rolling is 85-90%. The warm rolling temperature is 380–420°C, and the total deformation is 40–50%. The total deformation during finishing rolling is 50-80%; The graded annealing is divided into a high-temperature annealing stage and a low-temperature annealing stage. The high-temperature annealing stage has an annealing temperature of 680-720℃ and a holding time of 5-6 hours. The low-temperature annealing stage has an annealing temperature of 180-220℃ and a holding time of 2-3 hours.

2. The method for preparing rolled copper foil according to claim 1, characterized in that, The oxygen-free copper strip blank has a thickness of 0.8–1.2 mm, a purity of 99.95–99.995%, and an oxygen content of less than 10 ppm.

3. The method for preparing rolled copper foil according to claim 1, characterized in that, The homogenization annealing is performed at a temperature of 800–900°C for 5–6 hours.

4. The method for preparing rolled copper foil according to claim 1, characterized in that, The intermediate annealing temperature is 750–780℃, and the holding time is 5–6 hours.

5. The method for preparing rolled copper foil according to claim 1, characterized in that, The annealing is carried out in a bell furnace containing a protective atmosphere of 15-20 wt% CO or H2 and 80-85 wt% Ar.

6. The method for preparing rolled copper foil according to claim 1, characterized in that, The cleaning process is as follows: first, alkaline washing with an alkaline concentration of 3-5% at a temperature of 70-80°C; then, acid washing with a sulfuric acid concentration of 10-13% at room temperature; followed by passivation treatment with a benzotriazole solution at a concentration of 0.05-0.08 g / L at a temperature of 60-80°C; and finally, rinsing with clean water. The cleaning speed is 30-40 m / min.

7. The method for preparing rolled copper foil according to claim 1, characterized in that, The polishing is electrochemical polishing, with a polishing voltage of 1.5–2.5V and a polishing time of 2–5 minutes. The polishing solution consists of the following components at the following concentrations: phosphoric acid 280–360 g / L, sodium citrate 25–40 g / L, ethylene glycol 40–55 g / L, polyvinylpyrrolidone 3–8 g / L, and phenylurea 3–5 g / L.

8. A graphene-specific rolled copper foil, characterized in that, The rolled copper foil is prepared using the method described in any one of claims 1 to 7.

9. The graphene-specific rolled copper foil according to claim 8, characterized in that, The graphene-specific rolled copper foil has a thickness of 10–30 μm, an average grain size of 100–150 μm, and a surface roughness of 0.01–0.03 μm.

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