A device and method for purifying tail gas particles in semiconductor process flow

Abstract

The present invention discloses a device and method for purifying tail gas particles in a semiconductor process. The device includes a cooling module, a plasma generation module, a flow guide module, a dust collection module and a Y-shaped pipe; the Y-shaped pipe has an input port, a straight-through outlet and a side outlet pipe; the plasma generation module and the flow guide module are arranged in the Y-shaped pipe; wherein the cooling module is used to cool the discharged exhaust gas, so that the chemical components in the exhaust gas accelerate condensation and growth into particles after cooling; the plasma generation module is used to form a plasma area above the inlet of the side outlet pipe, and charge the particles flowing through to form charged particles; the flow guide module is used to repel the charged particles and introduce them into the side outlet pipe; the dust collection module is connected to the outlet of the side outlet pipe of the Y-shaped pipe, and is used to collect the inflowing particles. The device has the advantages of easy operation, all-weather, high efficiency and low cost.

Description

Technical Field

[0001] The invention belongs to the technical field of particle removal in semiconductor manufacturing processes, and relates to a device for purifying tail gas particles in a semiconductor process flow. Background Art

[0002] Particle control has been accompanying the development of the entire semiconductor manufacturing process. This is because in the semiconductor manufacturing process, thin film processes, such as thin film deposition, chemical vapor deposition (CVD), atomic layer deposition (ALD), plasma vapor deposition (PECVD), etc., such as thin film removal, plasma etching (Plasma Etch), plasma ashing (Plasma Asher), etc., in the deposition and removal process of the above thin films, the gas and solid are constantly transformed, and particulate matter will be continuously generated.

[0003] Driven by Moore's Law, IC manufacturing has become smaller and smaller, and the control of particulate matter has become more and more stringent. In the manufacturing process of integrated circuit chips, especially the deposition and removal of thin films (metal and non-metal), a large number of micro-nano particles will inevitably be generated. The appearance of these particles in the vacuum chamber not only reduces the yield rate of the wafer, but also enters the exhaust system through the vacuum pipe, thereby increasing the burden on the vacuum system and increasing the difficulty of maintenance. Therefore, the removal of particle pollutants is a key link in the semiconductor manufacturing process.

[0004] On the one hand, particulate matter comes from the factory processing and production environment, and on the other hand, it comes from solid particles of various sizes generated by complex gas phase reactions in the tape-out process. Among them, the particles generated in the tape-out process are the main source. According to statistics, in the production of 4M DRAM with a design line width of 1mm, 50% of the polluted particles are generated by the factory processing and production environment, and the remaining 50% of the particles are generated by process equipment. In the production of 16M DRAM with a line width of 0.5mm, the particles generated by process equipment increased to 60%; in the production of 64M DRAM with a line width of 0.35mm, the particles generated by process equipment increased to 75%; and in the production of 256M DRAM with a line width of 0.25mm, the particles generated by process equipment will be as high as 90%, becoming the main source of pollution.

[0005] As mentioned above, particulate matter is mainly formed in the vacuum chamber, and the vacuum chamber is connected to the exhaust system. Therefore, particulate matter will inevitably enter the exhaust system with the residual gas after the gas phase reaction and pollute the exhaust system. On the one hand, particulate matter will be adsorbed on the wall of the pipe when passing through the exhaust pipe, and it is difficult to fall off, forming permanent pollution. On the other hand, particulate matter will enter the environment through the exhaust system and pollute the environment. Since the vacuum system works continuously around the clock to maintain the vacuum degree in the vacuum chamber, particulate matter will continue to accumulate in the exhaust pipe. If it is shut down for maintenance, it will affect the continuous operation of the semiconductor manufacturing process and increase the system cost. Therefore, removing particulate matter in the exhaust system and collecting particulate matter is a key technical issue in the current semiconductor manufacturing field.

[0006] At present, in the field of semiconductor manufacturing, general vacuum systems such as Figure 1 As shown: Semiconductor products are processed in the vacuum chamber, and various physical and chemical reactions occur in the chamber to convert gas and solid, such as: SiH4 (gas) + NH3 (gas) → Si3N4 (solid) + H2 (gas). Moreover, most of the time, the chemical reaction is not complete, thus generating various by-products, which is also the main source of particles. The vacuum pump is connected to the vacuum chamber through the front vacuum pipeline and maintains the vacuum environment in the chamber. The vacuum pump exhaust is connected to the exhaust gas treatment equipment through the exhaust pipeline. After the exhaust gas treatment equipment treats the harmful gas, it is discharged into the factory's main exhaust pipeline through the exhaust gas.

[0007] The patent with publication number CN117357991A discloses a semiconductor production waste gas treatment process, which includes: pretreatment, introducing the object into the front mechanism to participate in the front dust removal treatment; gas mixing treatment, introducing the object output by the front mechanism into the gas mixing mechanism to participate in the slow flow and speed reduction treatment; purification treatment, introducing the object output by the gas mixing mechanism into the purification mechanism to participate in the plasma combustion purification treatment; cooling treatment, introducing the object output by the purification treatment into the cooling mechanism for cooling treatment; discharge treatment, discharging the object output by the cooling mechanism through the external discharge mechanism. This solution is not only complex in structure, but also requires combustion treatment, which has certain safety hazards.

[0008] In actual working conditions, particles are mainly generated in the vacuum chamber. In addition, as the activation of the reaction gas gradually decays and gradually agglomerates into particles, they are also generated in the front-stage vacuum pipeline, and then enter the vacuum pump and subsequent exhaust pipelines, exhaust gas treatment equipment, and the main factory emission pipeline.

[0009] There are several solutions or combinations of solutions for removing particles from vacuum exhaust pipes:

[0010] 1. Add a filtering device, such as a screen, before the dry pump that maintains the vacuum system, and filter particles by controlling the aperture of the screen, such as Figure 2 The disadvantage of this method is that the screen will affect the pumping speed of the vacuum pump and there is a risk of clogging, so it is rarely used.

[0011] Second, add insulation function to the front vacuum pipeline and exhaust pipeline to maintain the high temperature of the pipeline, so as to achieve the purpose of suppressing the generation of particles. This method is more commonly used, such as Figure 3 The disadvantage of this method is that the particles generated in the chamber will still accumulate in the subsequent vacuum system, thereby increasing the burden on the vacuum system and failing to fundamentally solve the problem.

[0012] 3. Based on the second method, the opposite idea is adopted. A cold trap is added in the front vacuum pipeline to make the activated gas quickly condense or combine into particles, so as to remove it. Figure 4 The disadvantage of this method is that the gas velocity in the pipeline is too high, making it difficult for the cold trap to play an effective role. Summary of the invention

[0013] The purpose of the present invention is to solve the key technical problem of how to remove particulate matter in the exhaust system in the semiconductor manufacturing field, and proposes a device for purifying exhaust particulate matter in the semiconductor process flow, which has the advantages of easy operation, all-weather, high efficiency and low cost.

[0014] The technical solution of the present invention is:

[0015] A device for purifying tail gas particles in a semiconductor process flow, characterized in that it comprises a cooling module, a plasma generation module, a flow guide module, a dust collection module and a Y-shaped pipe; the Y-shaped pipe has an input port, a straight outlet and a side outlet pipe; the plasma generation module and the flow guide module are arranged in the Y-shaped pipe; wherein,

[0016] One end of the cooling module is connected to the exhaust port of the vacuum chamber in the semiconductor manufacturing process, and the other end is connected to the input port of the Y-shaped pipe, so as to cool the exhaust gas discharged from the vacuum chamber, so that the chemical components in the exhaust gas are accelerated to condense and grow into particles after cooling and then enter the Y-shaped pipe;

[0017] The plasma generating module is used to form a plasma region above the inlet of the lateral outlet pipe of the Y-shaped pipe, and to charge particles flowing through the plasma region to form charged particles;

[0018] The flow guide module is used to use the electric field generated by itself to repel the charged particles and guide them into the side outlet pipe;

[0019] The dust collection module is connected to the outlet of the side outlet pipe of the Y-shaped pipe, and is used to collect the inflowing particulate matter;

[0020] The straight-through outlet of the Y-shaped pipeline is connected to the vacuum pump through an exhaust pipe, so as to discharge the residual gas after the particulate matter is filtered out through the vacuum pump.

[0021] Furthermore, the plasma generation module and the flow guide module are the same metal grid; the metal grid is electrically connected to a power source located outside the Y-shaped pipe to provide negative pressure for the metal grid.

[0022] Furthermore, the power source is a radio frequency power source with a power of 1 to 200 W and a frequency of 13.56 MHz; or the power source is an alternating current power source.

[0023] Furthermore, the metal grid is tilted at an angle of 45° in the Y-shaped pipe; the mesh radius of the metal grid is 3 mm, and the mesh wire thickness is 1 mm.

[0024] Furthermore, the metal grid is an elliptical metal grid with a major axis of 170 mm and a minor axis of 120 mm; the inner diameter of the Y-shaped pipe is 160 mm and the outer diameter is 165 mm; the lower end of the elliptical metal grid extends into the inlet of the lateral outlet pipe of the Y-shaped pipe.

[0025] Furthermore, the minimum distance between the edge of the elliptical metal grid and the inner wall of the Y-shaped pipe is 20 mm.

[0026] Furthermore, the cooling module includes an air duct and a water cooling pipe, one end of the air duct is connected to the exhaust port of the vacuum chamber in the semiconductor manufacturing process through a flange, and the other end is connected to the input port of the Y-shaped pipe; the water cooling pipe is tightly wrapped around the outer wall of the air duct.

[0027] Furthermore, the dust collection module is a collection tank, and the inner and outer diameters of the collection tank match the inner and outer diameters of the Y-shaped pipe.

[0028] A purification method based on the tail gas particulate matter purification device in the above semiconductor process flow, the steps are:

[0029] 1) Turning on the power system, so that when the residual gas from the semiconductor manufacturing vacuum chamber flows through the vicinity of the plasma generating module in the Y-shaped pipe, gas discharge is formed, plasma is generated to form a plasma region; and negative pressure is provided for the flow guide module;

[0030] 2) When the particulate matter in the residual gas flows through the plasma area formed in the Y-shaped pipe with the residual gas, the plasma is used to charge the particulate matter to obtain charged particles; when the charged particles continue to move downward with the airflow and approach the guide module, the charged particles are repelled by the electric field generated by the guide module, introduced into the side outlet pipe of the Y-shaped pipe, and enter the collection module, completing the collection process of the particulate matter in the residual gas.

[0031] The present invention comprises four modules: a cooling module, a plasma generating module, a flow guiding module and a dust collecting module, wherein the cooling module, the plasma generating module and the flow guiding module are assembled and integrated in sequence and arranged on a pipeline of a semiconductor manufacturing exhaust system, and the dust collecting module is connected to the side outlets of the plasma generating module and the flow guiding module.

[0032] The cooling module consists of an air guide tube and a water cooling tube, which are installed behind the vacuum chamber exhaust port. The water cooling tube is wrapped around the air guide tube, and cold water is introduced into the lower tube port and flows out from the upper tube port. The chemical components in the residual gas accelerate condensation and grow into particles after cooling. Adding a cooling module can promote the growth of particles in the residual gas, improve the removal efficiency of particles in the residual gas, and reduce the pollutant components in the residual gas discharged at the end.

[0033] The plasma generation module and the flow guide module are arranged in a Y-shaped pipe below the cooling module. The plasma generation module is mainly used to generate uniform plasma in order to obtain a relatively uniform distribution of electrons and ions in space. When the particles in the residual gas flow through the plasma, the electrons and ions in the plasma will collide with the particles and adsorb on the surface of the particles to charge the particles. When the electron charging current and the ion charging current reach equilibrium, the amount of charge obtained by the particles reaches saturation. Since the mass of electrons is much smaller than the mass of ions, the thermal velocity of electrons is much greater than the thermal velocity of ions. Therefore, the particles usually end up being negatively charged. By adjusting the discharge parameters to change parameters such as electron density, the charge of the particles can ultimately be controlled. In short, the purpose of the plasma module is to generate uniform plasma and charge the particles passing through.

[0034] The guide module refers to a grid structure with a negative bias, which is characterized by an elliptical shape and is placed obliquely in the Y-shaped pipe. The purpose is to use the negative bias of the grid itself to repel negatively charged particles and guide the particles in the exhaust pipe to the side outlet of the Y-shaped pipe. The guide module and the plasma generation module share a metal grid structure. When the particle flow is charged by the plasma module, it is repelled by the electric field on the surface of the negatively biased grid structure, and the negatively charged particles will move along the surface of the grid structure. After the residual gas particles generated in the semiconductor process vacuum chamber enter the exhaust pipe, they are evenly distributed in the pipe. When the particles reach the guide module, they will move along the oblique grid structure to the lower outlet of the Y-shaped pipe, so there are no more particles in the pipe. After the particles flow through the guide module, they enter the dust collection module.

[0035] The main function of the dust collection module is to collect the particulate matter from the guide module by setting a collection groove at the side outlet of the guide module. According to actual needs, a groove structure of a certain size can be set. The particles in the exhaust duct are affected by gravity and the repulsive effect of the metal grid with negative bias, and move along the surface of the grid to the side of the Y-shaped duct. After passing through the guide module, they naturally fall into the groove of the side dust collection module to realize the collection of particulate matter. The particles in the exhaust duct pass through these four modules in turn and are finally collected in the dust collection module. Since the plasma module and the guide module themselves have negative bias, they repel negatively charged particles, so the particles will not pollute these two modules, that is, these two modules do not need to be cleaned. The dust collection module can be removed and cleaned regularly according to actual conditions.

[0036] The method of the present invention mainly comprises the following steps:

[0037] A. An air duct is provided, one end of which is connected to the exhaust port of the semiconductor manufacturing process exhaust system pipeline through a flange, and the other end is connected to the input port of the Y-shaped pipeline; the Y-shaped pipeline has an input port, a straight outlet and a side outlet pipe; the outside of the air duct is tightly wrapped with a spiral water-cooling pipe, and cold water is introduced into the water-cooling pipe, entering from the lower pipe port and flowing out from the upper pipe port.

[0038] B. The Y-shaped pipe is connected to the vertical pipe between the vacuum chamber and the vacuum pump, the input port of the Y-shaped pipe is connected to the air guide pipe through a flange, and the straight outlet of the Y-shaped pipe is connected to the vacuum pump through an exhaust pipe.

[0039] C. The Y-shaped pipe contains a plasma generation module and a flow guide module. An elliptical metal grid is placed obliquely at the center of the Y-shaped pipe, which is used to form a plasma area above the inlet of the side outlet pipe of the Y-shaped pipe, charge the particles flowing through the plasma area to form plasma, and repel the plasma and introduce it into the side outlet pipe; an appropriate amount of spacing is left between the metal grid and the Y-shaped pipe, and if necessary, the metal grid can be bent to facilitate the guidance of particle movement. The metal grid is connected to an external power source of the Y-shaped pipe, and a certain voltage is first applied to the metal grid to discharge the nearby gas to generate plasma. At this time, the metal grid will automatically form a negative bias voltage, which can generate an electric field to repel negatively charged particles and form a flow guide effect. Therefore, the metal grid in the present invention serves as both a plasma generation module and a flow guide module.

[0040] D. The outlet of the side outlet pipe of the Y-shaped pipe is connected to the collection module. A collection tank is provided at the side outlet of the Y-shaped pipe, and the collection tank is connected to the outlet of the side outlet pipe of the Y-shaped pipe by a flange. The flange is connected to the Y-shaped pipe to collect the particulate matter guided by the metal grid.

[0041] E. Turn on the power system, so that when the residual gas from the semiconductor manufacturing vacuum chamber flows through the metal grid in the Y-shaped pipe, gas discharge is formed to generate uniform plasma. The required plasma is obtained by controlling the power of the power supply, etc. The metal grid is connected to an external power supply and has a negative bias voltage.

[0042] F. When the particles in the residual gas flow through the plasma area formed in the Y-shaped pipe with the residual gas, the plasma quickly charges the particles, and the particles become electronegative. When the electronegative particles continue to move downward with the gas flow and approach the negatively charged elliptical metal grid, the negatively charged particles are repelled by the electric field on the surface of the elliptical metal grid and move downward along the surface of the elliptical metal grid toward the inlet of the side outlet pipe of the Y-shaped pipe. When the particles flow to the bottom of the outlet of the side outlet pipe of the Y-shaped pipe and enter the collection tank, the collection process of the particles in the residual gas is completed.

[0043] G. After a certain working time, the collection tank is removed from the exhaust pipe, the particulate matter in the collection tank is cleaned, and the collection tank is installed back to the original position to continue the process of recovering the particulate matter in the residual gas.

[0044] The pipe sizes described in steps A and B can be set according to the actual exhaust pipe sizes of the factory.

[0045] Step C sets an external power supply for the elliptical metal grid, the purpose of which is to generate uniform plasma by gas discharge near the elliptical metal grid. The power supply can use a radio frequency power supply with a frequency of 13.56MHz and a power between 1-200W, or a common AC power supply with a frequency of tens to tens of kilohertz. No matter which power supply is used, a certain negative bias voltage must be provided. The elliptical metal grid is placed obliquely in the Y-shaped pipe to block the straight-through outlet of the Y-shaped pipe and guide the particles to the side outlet pipe of the Y-shaped pipe.

[0046] The size of the collection tank described in step D can be set according to the particle recovery frequency. The larger the size, the more particles it can accommodate and the longer the continuous working time of the collection device. If necessary, an anti-backflow device can be added to the collection tank to prevent particles falling into the collection tank from being affected by the airflow and flying out of the collection tank.

[0047] After the plasma described in step E is generated, a quasi-neutral environment containing free electrons, ions and various other active substances will be formed in the region. When the particles approach the elliptical metal grid with the airflow, the surrounding free electrons and ions will collide with the particles and adhere to the particles to make them charged. Since the movement speed of free electrons is much greater than the movement speed of ions, the particles generally show negative charge after the charge reaches equilibrium.

[0048] The plasma generated in step F generates a non-neutral area on the surface of the elliptical metal grid, and a strong electric field is formed in the area, which can generate a repulsive force on the negatively charged particles. After being repelled, the particles move along the inclined direction of the elliptical metal grid, cannot pass through the metal grid, and move along the side outlet of the Y-shaped pipe instead.

[0049] The advantages of the present invention are as follows:

[0050] The method of the present invention can theoretically purify particulate matter in residual gas of semiconductor manufacturing process with an efficiency of 100%, which can not only realize green environmental protection and no particulate matter emission, but also protect the back-stage vacuum pump of the vacuum system to a great extent. The device designed by the method of the present invention can operate for a long time, and the equipment cost is very low. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 This is a schematic diagram of a vacuum system in semiconductor manufacturing.

[0052] Figure 2 Schematic diagram of a vacuum system with a filter added before the dry pump.

[0053] Figure 3 Schematic diagram of the vacuum system for added insulation function.

[0054] Figure 4 Schematic diagram of the vacuum system for added cooling.

[0055] Figure 5 It is a schematic diagram of the structure of the present invention;

[0056] Figure numerals: 1-semiconductor process chamber; 2-particles; 3-air guide tube; 4-water cooling tube; 5-Y-type pipe; 6-metal grid; 7-RF (AC) negative pressure power supply; 8-collecting tank; 9-exhaust pipe; 10-vacuum pump. DETAILED DESCRIPTION

[0057] The present invention is further described in detail below in conjunction with the accompanying drawings. The examples given are only used to explain the present invention but not to limit the scope of the present invention.

[0058] like Figure 5 As shown, the method for collecting particles in a semiconductor process using plasma provided by the present invention specifically comprises the following steps:

[0059] The particles 2 in the semiconductor process chamber 1 will be drawn out with the exhaust gas through the exhaust pipe of the semiconductor manufacturing exhaust system, and enter the Y-shaped pipe 5 through the air duct 3. The air duct 3 has an inner diameter of 160mm, an outer diameter of 165mm, and a length of 400mm. The water-cooling pipe 4 is wrapped around the outer wall of the air duct 3 to cool the exhaust gas, and the particles 2 condense and grow more, and then flow into the adjacent Y-shaped pipe 5. The Y-shaped pipe 5 has an inner diameter of 160mm and an outer diameter of 165mm, and is made of glass. An elliptical metal grid 6 is placed at an angle of 45° to the horizontal direction in the Y-shaped pipe 5. The long axis of the elliptical metal grid 6 is 170mm, the short axis is 120mm, and its edge is 20mm away from the inner wall of the Y-shaped pipe 5. The lower end of the elliptical metal grid 6 is inserted into the inlet of the lateral outlet pipe of the Y-shaped pipe 5. The elliptical metal grid 6 is connected to the external radio frequency power supply 7 through the reserved hole on the wall of the Y-shaped pipe 5 with a wire wrapped in an insulating layer and sealed. The power of the radio frequency power supply 7 is 80W and the frequency is 13.56MHz. After the residual gas is discharged from the vacuum chamber and the radio frequency power supply 7 is powered on, a uniform plasma can be generated on the side of the elliptical metal grid 6.

[0060] A collecting tank 8 is arranged at the side outlet of the Y-shaped pipe 5. The outlet of the side outlet pipe of the Y-shaped pipe 5 is connected to the collecting tank 8 through a flange. The inner and outer diameters of the collecting tank 8 may correspond to those of the Y-shaped pipe 5, which are 160 mm and 165 mm. The depth of the collecting tank 8 is 200 mm.

[0061] The straight-through outlet of the Y-shaped pipe 5 is connected to the flange vacuum pump 10 through the exhaust pipe 9, and the residual gas collected by the particulate matter is discharged through the vacuum pump 10.

[0062] During operation, the external RF power supply 7 is turned on, and a uniform plasma is generated near the elliptical metal grid 6. The residual gas and particulate matter 2 flowing out of the semiconductor process chamber 1 enter the air guide tube 3, and the cooling promotes the growth of the particulate matter, and then enters the Y-shaped pipe 5. When the particulate matter 2 passes through the plasma near the elliptical metal grid 6, it will absorb a large amount of charge. Since the movement speed of electrons is greater than the movement speed of ions, the particulate matter will carry negative charge when the charge reaches stability. The negatively charged particulate matter will be repelled by the electric field on the surface of the negative potential elliptical metal grid 6, and will be guided into the side outlet pipe of the Y-shaped pipe 5 through the inclined elliptical metal grid 6, and then fall into the collection tank 8, while the residual gas will not be affected when passing through the metal grid 6.

[0063] The metal grid 6 plays a decisive role in the collection of residual gas particles 2. Therefore, special attention should be paid to the size and placement of the metal grid 6. On the one hand, the inclination angle of the metal grid should be appropriate to ensure that the particles in the residual gas have enough time to enter the side outlet channel of the Y-shaped pipe under the guidance of the metal grid. On the other hand, the hole radius of the metal grid should not be greater than 5mm to ensure that the particles can be intercepted and guided by the metal grid with little impact on the airflow. After testing, it was determined that the hole radius of the metal grid is 3mm and the mesh wire thickness is 1mm, which is better.

[0064] The particles falling into the collecting tank 8 should be recovered and cleaned regularly.

[0065] In this embodiment, the collection efficiency is tested by taking the continuous addition of pine pollen particles. In the experiment, the air pressure of the system is maintained at 80 Pa, and 5.437 grams of pine pollen particles with an average particle size of about 40 microns are evenly and slowly sprinkled into the air guide tube 2. Most of these particles are effectively collected by the method and enter the collection tank 8. After the experiment, the particles in the collection tank 8 are measured to be 5.421 grams, and the collection efficiency is 99.7%.

[0066] The present invention uses a plasma environment to charge particles in the residual gas of semiconductor manufacturing, and then achieves the purpose of removing particles in the residual gas by controlling the movement of the residual gas particles. The equipment used in the present invention has a simple structure and can be used sustainably, has low cost, is environmentally friendly and energy-saving, can be easily installed in the exhaust gas treatment pipeline process, has high efficiency in collecting particles, and has great significance for industrial production and environmental protection.

[0067] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

[0068] It will be apparent to those skilled in the art that the present application is not limited to the details of the exemplary embodiments described above, and that the present application can be implemented in other specific forms without departing from the spirit or essential features of the present application. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the present application is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present application. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

Claims

1. A device for purifying tail gas particles in a semiconductor process, characterized in that: It comprises a cooling module, a plasma generation module, a flow guide module, a dust collection module and a Y-shaped pipe; the Y-shaped pipe has an input port, a straight-through outlet and a side outlet pipe; the plasma generation module and the flow guide module are arranged in the Y-shaped pipe; wherein one end of the cooling module is connected to the exhaust port of the vacuum chamber in the semiconductor manufacturing process, and the other end is connected to the input port of the Y-shaped pipe, so as to cool the waste gas discharged from the vacuum chamber, so that the chemical components in the waste gas are accelerated to condense and grow into particles after cooling and then enter the Y-shaped pipe; The plasma generating module is used to form a plasma region above the inlet of the lateral outlet pipe of the Y-shaped pipe, and to charge particles flowing through the plasma region to form charged particles; The flow guide module is used to use the electric field generated by itself to repel the charged particles and guide them into the side outlet pipe; The dust collection module is connected to the outlet of the side outlet pipe of the Y-shaped pipe, and is used to collect the inflowing particulate matter; The straight-through outlet of the Y-shaped pipeline is connected to the vacuum pump through an exhaust pipe, so as to discharge the residual gas after the particulate matter is filtered out through the vacuum pump; The plasma generating module and the flow guiding module are the same metal grid; the metal grid is electrically connected to a power source located outside the Y-shaped pipe to provide negative pressure for the metal grid; the metal grid is tilted at an angle of 45° in the Y-shaped pipe; the mesh radius of the metal grid is 3 mm, and the mesh wire thickness is 1 mm.

2. The device according to claim 1, characterized in that The power source is a radio frequency power source with a power of 1 to 200 W and a frequency of 13.56 MHz; or the power source is an alternating current power source.

3. The device according to claim 1, characterized in that The metal grid is an elliptical metal grid with a major axis of 170 mm and a minor axis of 120 mm; the inner diameter of the Y-shaped pipe is 160 mm and the outer diameter is 165 mm; the lower end of the elliptical metal grid extends into the inlet of the lateral outlet pipe of the Y-shaped pipe.

4. The device according to claim 3, characterized in that The minimum distance between the edge of the elliptical metal grid and the inner wall of the Y-shaped pipe is 20 mm.

5. The device according to claim 1, characterized in that The cooling module includes an air duct and a water cooling pipe. One end of the air duct is connected to the exhaust port of the vacuum chamber in the semiconductor manufacturing process through a flange, and the other end is connected to the input port of the Y-shaped pipe; the water cooling pipe is tightly wrapped around the outer wall of the air duct.

6. The device according to claim 1, characterized in that The dust collecting module is a collecting tank, and the inner and outer diameters of the collecting tank match the inner and outer diameters of the Y-shaped pipe.

7. A purification method for tail gas particulate matter purification device in semiconductor process flow according to claim 1, the steps of which are: 1) Turning on the power system, so that when the residual gas from the semiconductor manufacturing vacuum chamber flows through the vicinity of the plasma generating module in the Y-shaped pipe, gas discharge is formed, plasma is generated to form a plasma region; and negative pressure is provided for the flow guide module; 2) When the particulate matter in the residual gas flows through the plasma area formed in the Y-shaped pipe with the residual gas, the plasma is used to charge the particulate matter to obtain charged particles; when the charged particles continue to move downward with the airflow and approach the guide module, the charged particles are repelled by the electric field generated by the guide module, introduced into the side outlet pipe of the Y-shaped pipe, and enter the dust collection module, completing the collection process of the particulate matter in the residual gas.

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