Method for manufacturing a semiconductor structure and semiconductor structure

By using a mixed solution of positively charged abrasive particles to perform chemical mechanical polishing on dielectric-metal composite structures, the problem of uneven flow field caused by various polishing liquids was solved, achieving stable and efficient semiconductor structure fabrication, reducing costs and improving safety.

CN117954317BActive Publication Date: 2026-07-24CHANGXIN MEMORY TECH INC
View PDF 2 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
CHANGXIN MEMORY TECH INC
Filing Date
2022-10-21
Publication Date
2026-07-24

AI Technical Summary

Technical Problem

The use of various polishing liquids in the chemical mechanical polishing process of semiconductor products in existing technologies leads to uneven flow fields, resulting in unstable polishing rates, which increases semiconductor product defects and production costs.

Method used

A chemical mechanical polishing method is used to perform chemical mechanical polishing on a media-metal composite structure by using a mixed solution of positively charged abrasive particles. By controlling polishing parameters such as removal rate, flow rate and additive concentration, selective removal of the media layer and metal layer can be achieved, avoiding the need to use multiple polishing discs and multiple polishing fluids.

Benefits of technology

This technology enables stable grinding of various semiconductor structural materials in the same grinding pad, reducing production and output costs while improving grinding efficiency and safety.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN117954317B_ABST
    Figure CN117954317B_ABST
Patent Text Reader

Abstract

The present disclosure provides a method for preparing a semiconductor structure and a semiconductor structure. The method for preparing the semiconductor structure includes providing a dielectric layer and a metal layer, forming a dielectric-metal composite structure, the dielectric layer having at least one opening formed therein, the metal layer filling the opening and covering a surface of the dielectric layer; providing a polishing mixed solution, the polishing mixed solution including positively charged polishing particles; and performing a chemical mechanical polishing process on the dielectric-metal composite structure using the polishing mixed solution to expose an upper surface of the dielectric layer and to make the upper surface of the dielectric layer not higher than an upper surface of the metal layer. The use of one mixed polishing liquid to polish more than one material of the semiconductor structure in the same polishing disc to obtain the desired dielectric-metal composite structure is achieved.
Need to check novelty before this filing date? Find Prior Art