A high-power phase shifter circuit with short-circuited branch line

Abstract

The present invention provides a high-power phase shifter circuit loaded with a short-circuited branch line, comprising an equivalent radio frequency circuit, the equivalent radio frequency circuit comprising a phase shift unit, a phase modulation unit 1, a phase modulation unit 2, a matching unit, a fourth PIN diode and a first capacitor, the cathode of the fourth PIN diode is connected to one end of the first capacitor, the anode is connected to the first radio frequency signal port and one end of the phase shift unit; the other end of the first capacitor is connected to the second radio frequency signal input port and the other end of the phase shift unit; the phase shift unit has a first node, one end of the phase shift unit is connected to one end of the phase modulation unit 1 and the anode of the fourth PIN diode, and the other end is connected to one end of the phase modulation unit 2 and the other end of the first capacitor; the matching unit is arranged between the first node and the ground; the phase modulation unit 1 is connected between the anode of the fourth PIN diode and the ground, and the phase modulation unit 2 is connected between the other end of the first capacitor and the ground. A combined phase shift of large phase and small phase is achieved, and the insertion loss of all phase shift states is small.

Description

Technical Field

[0001] The invention relates to the field of radio frequency microwaves, and in particular to a high-power phase shifter circuit loaded with a short-circuited branch line. Background Art

[0002] The existing switch line diode phase shifter structure requires four PIN diodes, resulting in large phase shift losses. Figure 1 As shown in the circuit structure diagram of the switched line diode phase shifter, the differential phase shift of the phase shifter depends only on the path difference between the two different transmission paths L1 and L2, but L1 and L2 cannot be selected arbitrarily. For the disconnected microwave transmission line, if the total electrical length after adding the equivalent reactance of the PIN diode is close to an integer multiple of the half wavelength of the operating frequency, microwave resonance will occur, resulting in a sharp increase in the loss of the phase shifter and a sharp deterioration in the phase shift accuracy.

[0003] For the existing loaded line diode phase shifter, such as Figure 2 As shown, it is only suitable for phase shifting with a small phase shift range. For phase shifting with a large phase shift range, its working bandwidth and port standing wave performance are not good, and multiple phase shifters with a small phase shift range must be used in series. Therefore, more PIN diodes are required, the circuit occupies a larger area, and the device loss will also be larger. When designing a phase shifter circuit, a loaded line phase shifter is generally used in a small phase shift range below 90°.

[0004] At present, many radar applications have a combination of large phase shift and small phase shift. In view of this situation, if the linear phase shifter combination is simply loaded with a switch linear diode phase shifter, this will greatly increase the loss of the entire phase shifter and affect the performance of the entire system link. Summary of the invention

[0005] In view of the deficiencies in the prior art, the present invention aims to provide a high-power phase shifter circuit with a short-circuited branch line.

[0006] In order to achieve the above object, the present invention is implemented through the following technical solutions:

[0007] An embodiment of the present invention provides a high-power phase shifter circuit loaded with a short-circuited branch line, including an equivalent radio frequency circuit, wherein the equivalent radio frequency circuit includes a phase shift unit, a phase modulation unit 1, a phase modulation unit 2, a matching unit, a fourth PIN diode and a first capacitor, the cathode of the fourth PIN diode is connected to one end of the first capacitor, the anode of the fourth PIN diode is connected to the first radio frequency signal port and is connected to one end of the phase shift unit, the other end of the first capacitor is connected to the second radio frequency signal input port and is connected to the other end of the phase shift unit;

[0008] The phase shift unit has a first node, one end of the phase shift unit is connected to one end of the phase modulation unit 1, the anode of the fourth PIN diode and the first RF signal port, and the other end of the phase shift unit is connected to one end of the phase modulation unit 2, the other end of the first capacitor and the second RF signal port;

[0009] The matching unit is connected between the first node and ground;

[0010] The phase adjustment unit 1 is connected between the anode of the fourth PIN diode and the ground, the phase adjustment unit 1 includes one or m first phase adjustment subunits, the first phase adjustment subunit includes a first microstrip line and a first PIN diode, the first end of the first microstrip line is connected to the anode of the first PIN diode, the second end of the first microstrip line is closer to the anode of the fourth PIN diode than the cathode of the first PIN diode, and m is a positive integer greater than ;

[0011] The second phase adjustment unit is connected between the other end of the first capacitor and the ground, and the second phase adjustment unit includes one or m second phase adjustment sub-units, and the second phase adjustment sub-unit includes a second microstrip line and a third PIN diode, a first end of the second microstrip line is connected to the anode of the third PIN diode, and a second end of the second microstrip line is closer to the other end of the first capacitor than the cathode of the third PIN diode;

[0012] If the first phase modulation unit includes a first phase modulation subunit and the second phase modulation unit includes a second phase modulation subunit, the second microstrip line is the same as the first microstrip line, and the third PIN diode is the same as the first PIN diode;

[0013] If the first phase modulation unit includes m first phase modulation subunits and the second phase modulation unit includes m second phase modulation subunits, the first end of the first microstrip line of the nth first phase modulation subunit is connected to the second end of the first microstrip line of the n+1th first phase modulation subunit, and the first end of the second microstrip line of the nth second phase modulation subunit is connected to the second end of the second microstrip line of the n+1th first phase modulation subunit; the first microstrip line of the nth second phase modulation subunit is the same as the first microstrip line of the nth first phase modulation subunit, the third PIN diode of the nth second phase modulation subunit is the same as the first PIN diode of the nth first phase modulation subunit, and n is a positive integer greater than, equal to and less than m.

[0014] Further, the phase shift unit includes a third microstrip line and a fourth microstrip line, one end of the third microstrip line is connected to one end of the fourth microstrip line, the first node is located between one end of the third microstrip line and one end of the fourth microstrip line, the other end of the third microstrip line is connected to the second end of the first microstrip line, the anode of the fourth PIN diode and the first RF signal port, and the other end of the fourth microstrip line is connected to the second end of the second microstrip line, the other end of the first capacitor and the second RF signal port.

[0015] Further, the matching unit includes a first inductor and a second PIN diode, one end of the first inductor is connected to the anode of the second PIN diode, and the other end of the first inductor is closer to the first node than the cathode of the second PIN diode.

[0016] Furthermore, it also includes a control unit 1;

[0017] If the first phase adjustment unit includes a first phase adjustment subunit and the second phase adjustment unit includes a second phase adjustment subunit, the first control unit includes a control subunit, one end of the control subunit is connected to the other end of the first phase adjustment subunit and the other end of the second phase adjustment subunit, and the other end of the control subunit is grounded;

[0018] If the phase adjustment unit 1 includes m first phase adjustment subunits and the phase adjustment unit 2 includes m second phase adjustment subunits, the control unit 1 includes m control subunits, and one end of the nth control subunit is connected to the other end of the nth first phase adjustment subunit and the other end of the nth second phase adjustment subunit, and the other end of the nth control subunit is grounded.

[0019] Further, the control subunit includes resistor 1, a second capacitor, a second inductor and a first control power supply, one end of the second capacitor is connected to the cathode of the first PIN diode, the other end of the second capacitor is grounded, one end of the second inductor is connected to the cathode of the first PIN diode, the other end of the second inductor is connected to resistor 1, and the other end of the resistor 1 is connected to the first control power supply.

[0020] Furthermore, it also includes a second control unit, wherein the second control unit is connected between the other end of the matching unit and the ground;

[0021] The control unit 2 includes resistor 2, a third capacitor, a third inductor and a second control power supply, one end of the third capacitor is connected to the cathode of the second PIN diode, the other end of the third capacitor is grounded, one end of the third inductor is connected to the cathode of the second PIN diode, the other end of the third inductor is connected to one end of resistor 2, and the other end of resistor 2 is connected to the second control power supply.

[0022] Furthermore, it further comprises a control unit 3, one end of the control unit 3 is connected between the cathode of the fourth PIN diode and one end of the first capacitor, and the other end of the control unit 3 is grounded;

[0023] The control unit three includes a fifth inductor, a resistor three and a control power supply, one end of the fifth inductor is connected between the cathode of the fourth PIN diode and one end of the first capacitor, the other end of the fifth inductor is connected to one end of the resistor three, and the other end of the resistor three is connected to the control power supply.

[0024] Furthermore, it also includes a DC feeding unit, one end of which is connected to one end of the phase shifting unit, one end of the second phase modulation unit and the other end of the first capacitor, and the other end of the DC feeding unit is grounded.

[0025] Furthermore, the DC feeding unit includes a fourth inductor and a supply voltage, one end of the fourth inductor is connected to the other end of the fourth microstrip line, the second end of the second microstrip line and the other end of the first capacitor, and the other end of the fourth inductor is connected to the supply voltage.

[0026] The technical solution provided by the embodiments of the present invention may have the following beneficial effects:

[0027] The present invention proposes a high-power phase shifter circuit loaded with a short-circuited branch line, which can not only realize the combined phase shifting of large phase and small phase in one phase shifting structure, but also achieve lower insertion loss in all phase shifting states. Compared with the prior art, it combines the advantages of the two structures of the switch line diode phase shifter and the loaded line diode phase shifter; and reduces the area of ​​the phase shifter, which is conducive to miniaturized integrated design. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0029] Figure 1A schematic diagram of the circuit structure of a switch line diode phase shifter provided by the prior art;

[0030] Figure 2 A schematic diagram of the structure of a loaded line diode phase shifter provided in the prior art;

[0031] Figure 3 A schematic diagram of an equivalent radio frequency circuit structure of a high-power phase shifter circuit loaded with a short-circuited branch line provided in one embodiment of the present invention;

[0032] Figure 4 A schematic structural diagram of a high-power phase shifter circuit with a short-circuited branch line provided by an embodiment of the present invention;

[0033] Figure 5 A diagram showing simulation results of an example of a high-power phase shifter circuit loaded with a short-circuited branch line provided in one embodiment of the present invention;

[0034] Figure 6 A schematic diagram of an equivalent radio frequency circuit of a high-power phase shifter circuit loaded with a short-circuited branch line provided by another embodiment of the present invention;

[0035] Figure 7 A schematic structural diagram of a high-power phase shifter circuit with a short-circuited branch line provided by another embodiment of the present invention;

[0036] Figure 8 A schematic diagram of simulation results of an example of a high-power phase shifter circuit loaded with a short-circuited branch line provided by another embodiment of the present invention. DETAILED DESCRIPTION

[0037] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0038] According to an embodiment of the present invention, a high-power phase shifter circuit loaded with a short-circuited branch line is provided, including an equivalent radio frequency circuit, wherein the equivalent radio frequency circuit includes a phase shift unit, a phase adjustment unit 1, a phase adjustment unit 2, a matching unit, a fourth PIN diode D4 and a first capacitor C1, which can be referred to Figure 4 The cathode of the fourth PIN diode D4 is connected to one end of the first capacitor C1, the anode of the fourth PIN diode D4 is connected to the first RF signal port Rfin / out, and is connected to one end of the phase shift unit; the other end of the first capacitor C1 is connected to the second RF signal input port Rfin / out, and is connected to the other end of the phase shift unit;

[0039] The phase shift unit has a first node P, one end of the phase shift unit is connected to one end of the phase modulation unit 1, the anode of the fourth PIN diode D4 and the first RF signal port Rfin / out, and the other end of the phase shift unit is connected to one end of the phase modulation unit 2, the other end of the first capacitor C1 and the second RF signal port Rfout / in;

[0040] The matching unit is connected between the first node P and the ground;

[0041] The phase adjustment unit 1 is connected between the anode of the fourth PIN diode D4 and the ground. The phase adjustment unit 1 includes one or m first phase adjustment subunits. The first phase adjustment subunit includes a first microstrip line TL1 and a first PIN diode D1. The first end of the first microstrip line TL1 is connected to the anode of the first PIN diode D1. The second end of the first microstrip line TL1 is closer to the anode of the fourth PIN diode D4 than the cathode of the first PIN diode D1. m is a positive integer greater than 1.

[0042] The second phase adjustment unit is connected between the other end of the first capacitor C1 and the ground. The second phase adjustment unit includes one or m second phase adjustment subunits. The second phase adjustment subunit includes a second microstrip line TL2 and a third PIN diode D3. The first end of the second microstrip line TL2 is connected to the anode of the third PIN diode D3. The second end of the second microstrip line TL2 is closer to the other end of the first capacitor C1 than the cathode of the third PIN diode D3.

[0043] If the first phase modulation unit includes a first phase modulation subunit and the second phase modulation unit includes a second phase modulation subunit, the second microstrip line is the same as the first microstrip line, and the third PIN diode is the same as the first PIN diode;

[0044] If the phase modulation unit 1 includes m first phase modulation subunits and the phase modulation unit 2 includes m second phase modulation subunits, the first end of the first microstrip line of the nth first phase modulation subunit is connected to the second end of the first microstrip line of the n+1th first phase modulation subunit, and the first end of the second microstrip line of the nth second phase modulation subunit is connected to the second end of the second microstrip line of the n+1th first phase modulation subunit; the first microstrip line of the nth second phase modulation subunit is the same as the first microstrip line of the nth first phase modulation subunit, and the third PIN diode of the nth second phase modulation subunit is the same as the first PIN diode of the nth first phase modulation subunit, and n is a positive integer greater than or equal to 1 and less than m.

[0045] Wherein, when the first RF signal port Rfin / out is the RF signal input port, the second RF signal port Rfout / in is the RF signal output port:

[0046] The second RF signal port Rfout / in is a RF signal input port, and the first RF signal port Rfin / out is a RF signal output port.

[0047] Reference Figure 4 In one embodiment of the present invention, in a high-power phase shifter circuit loaded with a short-circuited branch line, the first phase-adjusting unit includes a first phase-adjusting sub-unit, and the second phase-adjusting unit includes a second phase-adjusting sub-unit. That is, the first phase-adjusting unit includes a first microstrip line TL1 and a first PIN diode D2, the first end of the first microstrip line TL1 is connected to the anode of the first PIN diode D2, and the second end of the first microstrip line TL1 is connected to the anode of the fourth PIN diode D4 (that is, the second end of the first microstrip line TL1 is closer to the anode of the fourth PIN diode D4 than the cathode of the first PIN diode D2); the second phase-adjusting unit includes a second microstrip line TL2 and a third PIN diode D3, the first end of the second microstrip line TL2 is connected to the anode of the third PIN diode D3, and the second end of the second microstrip line TL2 is connected to the other end of the first capacitor C1 (that is, the second end of the second microstrip line TL2 is closer to the other end of the first capacitor C1 than the cathode of the third PIN diode D3).

[0048] In an exemplary embodiment, the phase shift unit includes a third microstrip line TL3 and a fourth microstrip line TL4, one end of the third microstrip line TL3 is connected to one end of the fourth microstrip line TL4, the first node P is located between one end of the third microstrip line TL3 and one end of the fourth microstrip line TL4, the other end of the third microstrip line TL3 is connected to the second end of the first microstrip line TL1, the anode of the fourth PIN diode D4 and the first RF signal port Rfin / out, and the other end of the fourth microstrip line TL4 is connected to the second end of the second microstrip line TL2, the other end of the first capacitor C1 and the second RF signal port Rfout / in.

[0049] In an exemplary embodiment, the matching unit includes a first inductor L1 and a second PIN diode D2 , one end of the first inductor L1 is connected to the anode of the second PIN diode D2 , and the other end of the first inductor L1 is closer to the first node than the cathode of the second PIN diode D2 .

[0050] This embodiment controls the on-off states of different PIN diodes to switch different phase states of the circuit, specifically:

[0051] In the reference state, the fourth PIN diode D4 and the second PIN diode D2 are turned on, the first capacitor C1 and the fourth PIN diode D4 form a main signal path, the third microstrip line TL3 and the fourth microstrip line TL4 form two matching microstrip lines from a quarter wavelength to the ground, the first inductor L1 participates in circuit matching, the first PIN diode D1 and the third PIN diode D3 are in a cut-off state, and the first microstrip line TL1 and the second microstrip line TL2 are open microstrip lines;

[0052] When the phase shifter is in the maximum phase shift state, the second PIN diode D2 and the fourth PIN diode D4 are cut off, and the third microstrip line TL3 and the fourth microstrip line TL4 form a main signal path and become a main phase shift unit; the first PIN diode D1 and the third PIN diode D3 are in the cut-off state, and the second microstrip line TL2 and the first microstrip line TL1 are open microstrip lines;

[0053] On the basis of the maximum phase shift, the second PIN diode D1 and the third PIN diode D3 are turned on, the first microstrip line TL1 and the second microstrip line TL2 constitute two phase adjustment units, the first microstrip line TL1 connected in parallel with the third microstrip line TL3 and the second microstrip line TL2 connected in parallel with the fourth microstrip line TL4 are equivalent to inductors connected in parallel to the ground, which play a role of phase advance, and the entire phase shifter is in a small phase shift state.

[0054] The high-power phase shifter circuit loaded with short-circuited branch lines in the present invention also includes control unit 1, control unit 2, control unit 3 and a DC feeding unit to control the on-off states of different PIN diodes to achieve switching of different phase states of the circuit.

[0055] In an exemplary embodiment, the high-power phase shifter circuit for loading short-circuited stub lines includes a control unit 1;

[0056] If the first phase modulation unit includes a first phase modulation subunit and the second phase modulation unit includes a second phase modulation subunit, the first control unit includes a control subunit, one end of the control subunit is connected to the other end of the first phase modulation subunit and the other end of the second phase modulation subunit, and the other end of the control subunit is grounded;

[0057] If the phase adjustment unit 1 includes m first phase adjustment subunits and the phase adjustment unit 2 includes m second phase adjustment subunits, the control unit 1 includes m control subunits, and one end of the nth control subunit is connected to the other end of the nth first phase adjustment subunit and the other end of the nth second phase adjustment subunit, and the other end of the nth control subunit is grounded.

[0058] Reference Figure 4In one embodiment of the present invention, in a high-power phase shifter circuit loaded with a short-circuited branch line, the first phase adjustment unit includes a first phase adjustment sub-unit and the second phase adjustment unit includes a second phase adjustment sub-unit, and the first control unit includes a control sub-unit, one end of the control sub-unit is connected to the other end of the first phase adjustment sub-unit and the other end of the second phase adjustment sub-unit, and the other end of the control sub-unit is grounded. Figure 3 and Figure 4 It can be understood that the control subunit is the control unit, the first phase modulation subunit is the phase modulation unit 1, and the second phase modulation subunit is the phase modulation unit 2; one end of the phase modulation unit 1 is connected to the anode of the fourth PIN diode D4, one end of the phase modulation unit 2 is connected to the other end of the first capacitor C1, one end of the control unit 1 is connected to the other end of the phase modulation unit and the other end of the phase modulation unit 2, and the other end of the control unit 1 is grounded.

[0059] In this example, control unit 1 includes resistor 1 R1, a second capacitor C2, a second inductor L2 and a first control power supply Vc1, one end of the second capacitor C2 is connected to the cathode of the first PIN diode D1, the other end of the second capacitor C2 is grounded, one end of the second inductor L2 is connected to the cathode of the first PIN diode D1, the other end of the second inductor L2 is connected to resistor 1 R1, and the other end of the resistor 1 R1 is connected to the first control power supply Vc1.

[0060] In an exemplary embodiment, the high-power phase shifter circuit loaded with a short-circuited branch line further includes a second control unit, which is connected between the other end of the matching unit and the ground;

[0061] Reference Figure 4 The control unit 2 includes a resistor 2 R2, a third capacitor C3, a third inductor L3 and a second control power supply Vc2, one end of the third capacitor C3 is connected to the cathode of the second PIN diode D2, the other end of the third capacitor C3 is grounded, one end of the third inductor L3 is connected to the cathode of the second PIN diode D2, the other end of the third inductor L3 is connected to one end of the resistor 2 R2, and the other end of the resistor 2 R2 is connected to the second control power supply Vc2.

[0062] In an exemplary embodiment, the high-power phase shifter circuit loaded with a short-circuited branch line further includes a control unit 3, one end of the control unit 3 is connected between the cathode of the fourth PIN diode D4 and one end of the first capacitor C1, and the other end of the control unit 3 is grounded;

[0063] Reference Figure 4The control unit three includes a fifth inductor L5, a resistor three R2 and a third control power supply Vc3, one end of the fifth inductor L5 is connected between the cathode of the fourth PIN diode D4 and one end of the first capacitor C1, the other end of the fifth inductor L5 is connected to one end of the resistor three R2, and the other end of the resistor three R2 is connected to the third control power supply Vc3.

[0064] In an exemplary embodiment, the high-power phase shifter circuit loaded with the short-circuited branch line further includes a DC feeding unit, one end of the DC feeding unit is connected to one end of the phase shifting unit, one end of the phase modulation unit 2 and the other end of the first capacitor C1, and the other end of the DC feeding unit is grounded;

[0065] Reference Figure 4 The DC feeding unit includes a fourth inductor L4 and a power supply voltage Vcc, one end of the fourth inductor L4 is connected to the other end of the fourth microstrip line TL4, the second end of the second microstrip line TL2 and the other end of the first capacitor C1, and the other end of the fourth inductor L4 is connected to the power supply voltage Vcc.

[0066] In this embodiment, each control unit (such as control unit 1, control unit 2 and control unit 3) includes a current limiting resistor, a DC blocking capacitor and a feeding inductor. When the circuit is working, VCC can be a relatively small voltage, and the first control power supply Vc1, the second control power supply Vc2 and the third control power supply Vc3 can be 0V and a voltage higher than VCC to control the corresponding PIN diode.

[0067] The present invention combines the performance of the current mainstream PIN diode structure high-power phase shifter in the communication 4.9GHz frequency band, such as Figure 1 The mainstream switched line phase shifter shown in FIG. 1 can only produce two phase shift states, and the loss is mostly greater than 0.5 dB; while the existing loaded line phase shifter such as Figure 2 As shown, although multiple phase shift states can be generated, it is only suitable for generating a phase less than 90 degrees, and its frequency bandwidth is narrow.

[0068] Combination Figure 5 From the phase simulation results in the upper left figure, we can see that this simulation example can generate three phase shifts of 0 / 50 / 100 degrees from 4.7GHz to 5.1GHz, which makes up for the shortcomings of the switch-line phase shifter that can only generate two phase shift states and the loaded-line phase shifter that is suitable for circuits with a phase shift of less than 90 degrees. Figure 5 The simulation result diagram on the upper right shows that the insertion loss of each phase state is less than 0.5dB. Figure 5 The input and output simulation results of the lower left and lower right figures show that the input and output return losses of the present invention are both greater than 20dB. Figure 3 and Figure 4The exemplary solution has a significant improvement in insertion loss and broadband matching compared to the switch-line phase shifter structure and the loaded-line phase shifter structure.

[0069] See also Figure 6 and Figure 7 Another embodiment of the present invention provides a high-power phase shifter circuit loaded with a short-circuited branch line, including an equivalent radio frequency circuit, wherein:

[0070] The equivalent radio frequency circuit includes a phase shift unit, a phase modulation unit 1, a phase modulation unit 2, a matching unit, a fourth PIN diode D4 and a first capacitor C1, wherein a cathode of the fourth PIN diode D4 is connected to one end of the first capacitor C1, an anode of the fourth PIN diode D4 is connected to the first radio frequency signal port Rfin / out and is connected to one end of the phase shift unit, and the other end of the first capacitor C1 is connected to the second radio frequency signal input port Rfin / in and is connected to the other end of the phase shift unit;

[0071] The phase shift unit has a first node P, one end of the phase shift unit is connected to one end of the phase modulation unit 1, the anode of the fourth PIN diode D4 and the first RF signal port Rfin / out, and the other end of the phase shift unit is connected to one end of the phase modulation unit 2, the other end of the first capacitor C1 and the second RF signal port Rfout / in;

[0072] The matching unit is connected between the first node P and the ground;

[0073] The phase adjustment unit 1 is connected between the anode of the fourth PIN diode D4 and the ground. The phase adjustment unit 1 includes two first phase adjustment sub-units, such as Figure 6 As shown, the first first phase adjustment subunit includes a first first microstrip line TL1-1 and a first first PIN diode D1-1, the first end of the first first microstrip line TL1-1 is connected to the anode of the first first PIN diode D1-1, and the second end of the first first microstrip line TL1-1 is closer to the anode of the fourth PIN diode D4 than the cathode of the first first PIN diode D1-1; the second first phase adjustment subunit includes a second first microstrip line TL1-2 and a second first PIN diode D1-2, the first end of the second first microstrip line TL1-2 is connected to the anode of the second first PIN diode D1-2, and the second end of the second first microstrip line TL1-2 is connected to the first end of the first first microstrip line TL1-1;

[0074] The second phase-adjusting unit is connected between the other end of the first capacitor C1 and the ground. The second phase-adjusting unit includes two second phase-adjusting sub-units. The first second phase-adjusting sub-unit includes a first second microstrip line TL2-1 and a first third PIN diode D3-1. The first end of the first second microstrip line TL2-1 is connected to the anode of the first third PIN diode D3-1, and the second end of the first second microstrip line TL2-1 is closer to the other end of the first capacitor C1 than the cathode of the first third PIN diode D3-1. The second second phase-adjusting sub-unit includes a second second microstrip line TL2-2 and a second third PIN diode D3-2. The first end of the second second microstrip line TL2-2 is connected to the anode of the second third PIN diode D3-2, and the second end of the second second microstrip line TL2-2 is connected to the second end of the first second microstrip line TL2-2.

[0075] The first second microstrip line TL2-1 is the same as the first first microstrip line TL1-1, and the second second microstrip line TL2-2 is the same as the second first microstrip line TL1-1; the first third PIN diode D3-1 is the same as the first first PIN diode D1-1, and the second third PIN diode D3-2 is the same as the second first PIN diode D1-2.

[0076] Different from Figure 3 and Figure 4 The high-power phase shifter circuit with short-circuited branch line is illustrated in the embodiment. Figure 4 A first-level phase modulation unit can be added on the basis of the circuit. The first phase modulation unit includes two first phase modulation sub-units, and the second phase modulation unit includes two second phase modulation sub-units. Figure 6 and Figure 7 , which enables the phase shifter to achieve 4 phase shift states, improves the adaptability of the circuit, reduces losses, and increases integration.

[0077] In this embodiment, the phase shift unit includes a third microstrip line TL3 and a fourth microstrip line TL4, one end of the third microstrip line TL3 is connected to one end of the fourth microstrip line TL4, the first node P is located between one end of the third microstrip line TL3 and one end of the fourth microstrip line TL4, the other end of the third microstrip line TL3 is connected to the second end of the first microstrip line TL1, the anode of the fourth PIN diode D4 and the first RF signal port Rfin / out, and the other end of the fourth microstrip line TL4 is connected to the second end of the second microstrip line TL2, the other end of the first capacitor Cl and the second RF signal port Rfout / in.

[0078] By way of example, the matching unit includes a first inductor L1 and a second PIN diode D2 , one end of the first inductor L1 is connected to an anode of the second PIN diode D2 , and the other end of the first inductor L1 is closer to the first node P than the cathode of the second PIN diode D2 .

[0079] In the reference state, the fourth PIN diode D4 is turned on, the first capacitor C1 and the fourth PIN diode D4 constitute the main signal path; the second PIN diode D2 is turned on, the third microstrip line TL3 and the fourth microstrip line TL4 constitute two matching microstrip lines from one quarter wavelength to ground, and the first inductor L1 participates in circuit matching; the first first PIN diode D1-1, the first third PIN diode D3-1, the second first PIN diode D1-2 and the second third PIN diode D3-2 are all in the cut-off state, and the first first microstrip line TL1-1, the first second microstrip line TL2-1, the second first microstrip line TL1-2 and the second second microstrip line TL2-2 are all open microstrip lines.

[0080] When the phase shifter is in the maximum phase shift state, the second PIN diode D2 and the fourth PIN diode D4 are cut off, the third microstrip line TL3 and the fourth microstrip line TL4 constitute the main signal path, and become the main phase shift unit; the first first PIN diode D1-1, the first third PIN diode D3-1, the second first PIN diode D1-2 and the second third PIN diode D3-2 are all in the cut-off state, and the first first microstrip line TL1-1, the first second microstrip line TL2-1, the second first microstrip line TL1-2 and the second second microstrip line TL2-2 are all open microstrip lines.

[0081] On the basis of the maximum phase shift, the second first PIN diode D1-2 and the second third PIN diode D3-2 are turned on, the first first microstrip line TL1-1 and the second first microstrip line TL1-2 are connected in series to the ground, and the second first microstrip line TL1-2 and the second second microstrip line TL2-2 are connected in series to the ground to form two phase adjustment units, the first first microstrip line TL1-1 and the second first microstrip line TL1-2 connected in parallel with the third microstrip line TL3, and the first second microstrip line TL2-1 and the second second microstrip line TL2-2 connected in parallel with the fourth microstrip line TL4 are equivalent to inductors connected in parallel to the ground, which play a role of phase advance, and the entire phase shifter is in a smaller phase shift state.

[0082] On the basis of the smaller phase shift state, the first first PIN diode D1-1, the first third PIN diode D3-1, the second first PIN diode D1-2 and the second third PIN diode D3-2 continue to be turned on, and the first first microstrip line TL1-1 and the first second microstrip line TL2-1 are connected to the ground to form two new phase modulation units. Since the microstrip line to the ground is shorter and the equivalent parallel inductance to the ground is smaller, the phase of the phase modulation unit is more advanced. Compared with the previous smaller phase shift state, the phase shift phase of this state is smaller.

[0083] In this embodiment, the high-power phase shifter circuit loaded with the short-circuited branch line further includes a control unit 1;

[0084] Phase adjustment unit 1 includes two first phase adjustment subunits and phase adjustment unit 2 includes two second phase adjustment subunits, then control unit 1 includes two control subunits, one end of the control subunit is connected to the other end of the first phase adjustment subunit and the other end of the second phase adjustment subunit, and the other end of the control subunit is grounded.

[0085] Among them, refer to Figure 7 , the two control subunits include a first control subunit and a second control subunit, Figure 7 The box on the left side of the control unit is the first control subunit. Figure 7 The box on the right side of the control unit 1 is the second control subunit, the first control subunit includes a resistor 1 R1, a second capacitor C2, a second inductor L2 and a first control power source Vc1-1, one end of the resistor 1 R1 is connected to the first control power source Vc1-1, and the other end of the resistor 1 R1 is connected to one end of the second inductor L2;

[0086] The other end of the second inductor L2 in the first control subunit is connected to the cathode of the first first PIN diode D1-1 and the cathode of the first third PIN diode D3-1, one end of the second capacitor C2 in the first control subunit is connected to the cathode of the first first PIN diode D1-1 and the cathode of the first third PIN diode D3-1, and the other end of the second capacitor C2 in the first control subunit is grounded;

[0087] The second control subunit includes a resistor R1, a second capacitor C2, a second inductor L2 and a second first control power source Vc1-2, one end of the resistor R1 is connected to the second first control power source Vc1-2, and the other end of the resistor R1 is connected to one end of the second inductor L2;

[0088] The other end of the second inductor L2 in the second control subunit is connected to the cathode of the second first PIN diode D1-2 and the cathode of the second third PIN diode D3-2, one end of the second capacitor C2 in the second control subunit is connected to the cathode of the second first PIN diode D1-2 and the cathode of the second third PIN diode D3-2, and the other end of the second capacitor C2 in the second control subunit is grounded.

[0089] In order to better demonstrate the 4-phase state of this embodiment, a 0deg / 33deg / 67deg / 100deg high-power phase shifter is simulated and designed in the 4.9GHz communication frequency band. The phase shifter is small in size and can be integrated into the package substrate chip. Among them, the design length of the first first microstrip line TL1-1 and the first second microstrip line TL2-1 is 3.2mm and the width is 0.08mm; the length of the second first microstrip line TL1-2 and the second second microstrip line TL2-2 is 5.2mm and the width is 0.09mm; the length of the third microstrip line TL3 and the fourth microstrip line TL4 is 2.5mm and the width is 0.2mm; the capacitance value of the first capacitor C1 is 10pF, and the inductance value of the first inductor L1 is 2nH.

[0090] The simulation results are as follows Figure 8 As shown, combined Figure 8 From the phase simulation results in the upper left figure, it can be seen that this simulation example can generate four phase shifts of 0 / 33 / 67 / 100 degrees from 4.7GHz to 5.1GHz, which shows that the phase expansion of the patent of the present invention is good. Compared with the traditional switch-line phase shifter, the solution of this embodiment can realize the phase shift function of two traditional switch-line phase shifters. Figure 8 The insertion loss simulation results in the upper right figure show that within the 4.7GHz to 5.1GHz frequency band, the loss of each phase shift state of the phase shifter is less than 0.5dB. Figure 8 From the simulation results of the input and output return loss in the lower left and lower right figures, it can be seen that the input and output return losses of the patent of the present invention are both greater than 17dB. Each phase shift state of the patent of the present invention can achieve lower loss and better matching over a wider frequency band. Compared with the traditional PIN tube high-power phase shifter structure, this patent has great advantages in phase shift flexibility, insertion loss, frequency bandwidth and miniaturization.

[0091] It can be understood that if the phase adjustment unit 1 of the high-power phase shifter circuit loaded with the short-circuited branch line includes three first phase adjustment sub-units, the first first phase adjustment sub-unit includes the first first microstrip line and the first first PIN diode, the second first phase adjustment sub-unit includes the second first microstrip line and the second first PIN diode, and the third first phase adjustment sub-unit includes the third first microstrip line and the third first PIN diode;

[0092] Correspondingly, the second phase modulation unit includes three second phase modulation sub-units, the first second phase modulation sub-unit includes a first second microstrip line and a first third PIN diode, the second second phase modulation sub-unit includes a second second microstrip line and a second third PIN diode, and the third second phase modulation sub-unit includes a third second microstrip line and a third third PIN diode;

[0093] Correspondingly, control unit 1 includes three control subunits.

[0094] If the phase adjustment unit 1 of the high-power phase shifter circuit loaded with the short-circuited branch line includes m first phase adjustment sub-units, and the phase adjustment unit 2 includes m second phase adjustment sub-units, then the control unit 1 includes m control sub-units, where m is a positive integer greater than 1. The implementation structure can refer to Figure 4 or Figure 7 The high-power phase shifter circuit with short-circuited branch lines shown in the figure can be understood for reference only and will not be described in detail here.

[0095] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0096] The present invention uses first, second, etc. to describe various information, but such information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of the present invention, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information.

[0097] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, it can also be the internal connection of two components, it can be a wireless connection, or it can be a wired connection. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0098] Although this specification is described according to implementation modes, not every implementation mode includes only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. A high-power phase shifter circuit loaded with a short-circuited branch line, characterized in that: Includes an equivalent radio frequency circuit, where The equivalent radio frequency circuit includes a phase shift unit, a phase modulation unit 1, a phase modulation unit 2, a matching unit, a fourth PIN diode and a first capacitor, wherein a cathode of the fourth PIN diode is connected to one end of the first capacitor, an anode of the fourth PIN diode is connected to a first radio frequency signal port and is connected to one end of the phase shift unit, and the other end of the first capacitor is connected to a second radio frequency signal input port and is connected to the other end of the phase shift unit; The phase shift unit has a first node, one end of the phase shift unit is connected to one end of the phase modulation unit 1, the anode of the fourth PIN diode and the first RF signal port, and the other end of the phase shift unit is connected to one end of the phase modulation unit 2, the other end of the first capacitor and the second RF signal input port; The matching unit is connected between the first node and ground; The first phase adjustment unit is connected between the anode of the fourth PIN diode and the ground, the first phase adjustment unit includes one or m first phase adjustment subunits, the first phase adjustment subunit includes a first microstrip line and a first PIN diode, a first end of the first microstrip line is connected to the anode of the first PIN diode, a second end of the first microstrip line is closer to the anode of the fourth PIN diode than the cathode of the first PIN diode, and m is a positive integer greater than 1; The second phase adjustment unit is connected between the other end of the first capacitor and the ground. The second phase adjustment unit includes one or m second phase adjustment sub-units. The second phase adjustment sub-unit includes a second microstrip line and a third PIN diode. The first end of the second microstrip line is connected to the anode of the third PIN diode, and the second end of the second microstrip line is closer to the other end of the first capacitor than the cathode of the third PIN diode.

2. The high-power phase shifter circuit with short-circuited branch lines according to claim 1, characterized in that: The phase shift unit includes a third microstrip line and a fourth microstrip line, one end of the third microstrip line is connected to one end of the fourth microstrip line, the first node is located between one end of the third microstrip line and one end of the fourth microstrip line, the other end of the third microstrip line is connected to the second end of the first microstrip line, the anode of the fourth PIN diode and the first RF signal port, and the other end of the fourth microstrip line is connected to the second end of the second microstrip line, the other end of the first capacitor and the second RF signal input port.

3. The high-power phase shifter circuit with short-circuited branch lines according to claim 2, characterized in that: The matching unit includes a first inductor and a second PIN diode, one end of the first inductor is connected to the anode of the second PIN diode, and the other end of the first inductor is closer to the first node than the cathode of the second PIN diode.

4. The high-power phase shifter circuit with short-circuited branch lines according to any one of claims 1 to 3, characterized in that: Also includes a control unit 1; If the first phase adjustment unit includes a first phase adjustment subunit and the second phase adjustment unit includes a second phase adjustment subunit, the first control unit includes a control subunit, one end of the control subunit is connected to the other end of the first phase adjustment subunit and the other end of the second phase adjustment subunit, and the other end of the control subunit is grounded; If the phase adjustment unit 1 includes m first phase adjustment subunits and the phase adjustment unit 2 includes m second phase adjustment subunits, the control unit 1 includes m control subunits, one end of the nth control subunit is connected to the other end of the nth first phase adjustment subunit and the other end of the nth second phase adjustment subunit, and the other end of the nth control subunit is grounded.

5. The high-power phase shifter circuit with short-circuited branch lines according to claim 4, characterized in that: The control subunit includes resistor 1, a second capacitor, a second inductor and a first control power supply, one end of the second capacitor is connected to the cathode of the first PIN diode, the other end of the second capacitor is grounded, one end of the second inductor is connected to the cathode of the first PIN diode, the other end of the second inductor is connected to resistor 1, and the other end of the resistor 1 is connected to the first control power supply.

6. The high-power phase shifter circuit with loaded short-circuited branch line according to any one of claims 1 to 3, characterized in that: It also includes a second control unit, wherein the second control unit is connected between the other end of the matching unit and the ground; The control unit 2 includes resistor 2, a third capacitor, a third inductor and a second control power supply, one end of the third capacitor is connected to the cathode of the second PIN diode, the other end of the third capacitor is grounded, one end of the third inductor is connected to the cathode of the second PIN diode, the other end of the third inductor is connected to one end of resistor 2, and the other end of resistor 2 is connected to the second control power supply.

7. The high-power phase shifter circuit with loaded short-circuited branch line according to any one of claims 1 to 3, characterized in that: It also includes a control unit 3, one end of the control unit 3 is connected between the cathode of the fourth PIN diode and one end of the first capacitor, and the other end of the control unit 3 is grounded; The control unit three includes a fifth inductor, a resistor three and a third control power supply, one end of the fifth inductor is connected between the cathode of the fourth PIN diode and one end of the first capacitor, the other end of the fifth inductor is connected to one end of the resistor three, and the other end of the resistor three is connected to the third control power supply.

8. The high-power phase shifter circuit with loaded short-circuited branch line according to any one of claims 1 to 3, characterized in that: It also includes a DC feeding unit, one end of which is connected to one end of the phase shift unit, one end of the second phase modulation unit and the other end of the first capacitor, and the other end of the DC feeding unit is grounded.

9. The high-power phase shifter circuit with loaded short-circuited branch line according to claim 8, characterized in that: The DC feeding unit includes a fourth inductor and a power supply voltage, one end of the fourth inductor is connected to the other end of the fourth microstrip line, the second end of the second microstrip line and the other end of the first capacitor, and the other end of the fourth inductor is connected to the power supply voltage.

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