Method for cleaning silicon wafer using multi-nozzle progressive silicon wafer cleaning device

Abstract

The present invention discloses a multi-nozzle progressive silicon wafer cleaning device and a cleaning method thereof, wherein the cleaning device comprises: a progressive multi-nozzle component, a cushion block, a positioning component, a fixing component and a turntable component, wherein the fixing component is arranged at the top center of the turntable component, and the cushion block and the positioning component are arranged in sequence on the top of the turntable component extending outward from the fixing component as the center, and a height-adjustable progressive multi-nozzle component is arranged above the turntable component. The present invention has a reasonable structure, is adaptable to the use of silicon wafers of various specifications, can fully clean the surface of the wafer, and improves the cleaning effect.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor wafer cleaning equipment, and more specifically to a multi-nozzle progressive silicon wafer cleaning device and a cleaning method thereof. Background Art

[0002] Wafer refers to the silicon wafer used to make silicon semiconductor circuits. Its raw material is silicon. After grinding, polishing and cutting, the silicon crystal rod is formed into silicon wafers, commonly known as silicon slices. The diameters of wafers are mainly: 4 inches (100mm), 6 inches (150mm), 8 inches (200mm), 12 inches (300mm), and now it has developed to 18 inches (450mm) specifications, but large-size wafers are mainly 12 inches.

[0003] Chemical mechanical polishing is the use of chemical corrosion and mechanical force to planarize silicon wafers or other substrate materials during processing.

[0004] After chemical mechanical polishing, nanoparticles, organic compounds, metal ions, etc. remain on the surface of the silicon wafer, so the surface of the silicon wafer needs to be cleaned.

[0005] At present, wafers are generally placed on a turntable, and the impurities on the upper and lower surfaces of the wafers are cleaned by an ultrasonic cleaning component. The ultrasonic cleaning component moves along the radial direction of the wafer to clean the rotating wafer. However, due to the different circumferences of the wafer at different radii, and the ultrasonic cleaning component and the wafer are running at a constant speed, the cleaning of the wafer surface is uneven and the cleaning effect is poor. Therefore, when the wafer specifications are larger, the cleaning effect of the wafer edge is worse. Summary of the invention

[0006] In order to solve the above problems, the purpose of the present invention is to provide a multi-nozzle progressive silicon wafer cleaning device and a cleaning method thereof with a reasonable structure, adaptable to the use of silicon wafers of various specifications, ensuring sufficient cleaning of the surface of the wafer and improving the cleaning effect.

[0007] According to one aspect of the present invention, a multi-nozzle progressive silicon wafer cleaning device is provided, which includes: a progressive multi-nozzle component, a pad, a positioning component, a fixing component and a turntable component, the fixing component is arranged at the top center of the turntable component, the top of the turntable component is extended outward with the fixing component as the center, and the pad and the positioning component are arranged in sequence, and the height of the turntable component is adjustable. The silicon wafer is ensured to be coaxial with the turntable component by the positioning component, the silicon wafer is adsorbed by the fixing component, and the silicon wafer is cleaned by the progressive multi-nozzle component, and multiple nozzles ensure that the cleaning liquid and the pure water flow are diffused more toward the outer diameter of the wafer, so as to achieve a better cleaning effect.

[0008] In some embodiments, the progressive multi-nozzle component includes: a connection block and a rotating nozzle detachably mounted at the bottom of the connection block, wherein a plurality of rotating nozzles are provided, and the plurality of rotating nozzles are arranged in one row or multiple rows. By using a plurality of rotating nozzles and by making the rotating nozzles have a certain inclination angle toward the outer diameter of the wafer, it is possible to ensure that the cleaning liquid flow is more diffused toward the outer diameter of the wafer, thereby achieving a better cleaning effect.

[0009] In some embodiments, the rotating nozzle includes: a mounting portion, a rotating portion, and a sleeve nut, the top of the mounting portion is fixedly connected to the connecting block, the top of the mounting portion is provided with a liquid inlet, the bottom of the mounting portion is provided with a spherical groove, the top of the rotating portion is provided with a spherical connecting block and a nozzle, the spherical connecting block and the nozzle are provided with a liquid outlet penetrating therethrough, the spherical connecting block is provided in the spherical groove, and the sleeve nut confines the spherical connecting block in the spherical groove. The rotating portion rotates in the mounting portion to adjust the angle of the liquid outlet, and the rotating portion is fixed by the sleeve nut.

[0010] In some embodiments, the connection block is provided with a plurality of mounting holes, the mounting holes are arranged in one or more rows, the top of the mounting portion is threadedly connected and fixed to the mounting holes, 2-6 rotating nozzles are provided, and the spacing between the central axes of two adjacent nozzles is 25mm-55mm. The nozzles are arranged at a fixed spacing to ensure that the surface of the silicon wafer is cleaned by the cleaning liquid or pure water sprayed out by multiple streams.

[0011] In some embodiments, the turntable component includes: a central turntable and a turntable arm, a fixed component is installed at the top center of the central turntable and the central turntable drives the fixed component to rotate together, a plurality of turntable arms are arranged on the side wall of the central turntable, and the turntable arms are arranged in a circular array with the central axis of the central turntable as the center. The silicon wafer, the pad and the positioning component are driven to rotate together through the central turntable.

[0012] In some embodiments, a positioning component is installed at one end of the turntable arm away from the center turntable, the positioning component includes: a positioning block and a moving part, the moving part drives the positioning block to approach or move away from the center turntable, and at least three groups of positioning components are provided. Only by using at least three groups of positioning components can the circular silicon wafer be positioned, thereby ensuring that the center of the silicon wafer is consistent with the center of the center turntable.

[0013] In some embodiments, the positioning block is installed on the side of the cushion block away from the central turntable, the top height of the cushion block is lower than the top height of the positioning block, and the inner side of the positioning block has a concave arc surface. The cushion block is used to assist in supporting the silicon wafer, and the positioning block with the concave arc surface is easy to contact the edge of the silicon wafer.

[0014] In some embodiments, the fixing member is a vacuum suction cup, and the positioning block and the cushion block are both made of nylon material. The nylon positioning block and the cushion block ensure that the part in contact with the silicon wafer is made of a relatively soft material to prevent scratches on the silicon wafer.

[0015] In some embodiments, the end of the liquid outlet away from the liquid inlet has an inward taper of 60°, the diameter of the liquid inlet is 12-15 mm, and the diameter of the end of the liquid outlet is 8-10 mm.

[0016] According to one aspect of the present invention, a cleaning method of a multi-nozzle progressive silicon wafer cleaning device is provided, comprising the following steps:

[0017] S1: Confirm the specifications of the silicon wafer to be cleaned;

[0018] S2: adjusting the angle of the rotating nozzle and the height from the silicon wafer;

[0019] S3: Adjust and set the flow rate of the rotating nozzle;

[0020] S4: adjusting and setting the rotation speed of the central turntable;

[0021] S5: placing the silicon wafer to be cleaned on the central turntable;

[0022] S6: At least three groups of positioning components are retracted, and the positioning blocks drive the silicon wafer to be coaxial with the central turntable;

[0023] S7: The fixing component absorbs the silicon wafer;

[0024] S8: At least three groups of positioning components move outward, and the cushion block drives the positioning block away from the center turntable;

[0025] S9: The central turntable rotates while the nozzle sprays the cleaning fluid;

[0026] S10: The nozzle sprays the cleaning liquid for 80-120 seconds and then switches to pure water cleaning;

[0027] S11: After the nozzle sprays pure water for 25-60 seconds, the central turntable stops rotating;

[0028] S12: removing the cleaned silicon wafer;

[0029] S13: placing the silicon wafer to be cleaned on the central turntable;

[0030] S14: Repeat the above steps S6-S13.

[0031] In some embodiments, the silicon wafer is 12 inches, the number of the rotating nozzles is 5, the height of the liquid outlet of the rotating nozzle from the silicon wafer is 60-80 mm, the rotation speed of the central turntable is 600-800 RPM, the liquid outlet angle of the nozzle located at the center of the silicon wafer is 60°-65°, the liquid outlet angle of the nozzle located at the edge of the silicon wafer is 80°-85°, and the liquid outlet angle of the nozzle located in the middle of the silicon wafer increases from 60°-65° to 80°-85° in an arithmetic progression.

[0032] In some embodiments, the silicon wafer is 8 inches, the number of the rotating nozzles is 4, the height of the rotating nozzles from the silicon wafer is 60-80 mm, the rotation speed of the central turntable is 600-800 RPM, the liquid outlet angle of the nozzle located at the center of the silicon wafer is 60°-65°, the liquid outlet angle of the nozzle located at the edge of the silicon wafer is 80°-85°, and the liquid outlet angle of the nozzle located in the middle of the silicon wafer increases from 60°-65° to 80°-85° in an arithmetic progression.

[0033] In some embodiments, the silicon wafer is 6 inches, the number of the rotating nozzles is 3, the height of the rotating nozzles from the silicon wafer is 60-80 mm, the rotation speed of the central turntable is 600-800 RPM, the liquid outlet angle of the nozzle located at the center of the silicon wafer is 60°-65°, the liquid outlet angle of the nozzle located at the edge of the silicon wafer is 80°-85°, and the liquid outlet angle of the nozzle located in the middle of the silicon wafer increases from 60°-65° to 80°-85° in an arithmetic progression.

[0034] In some embodiments, the flow rate of the nozzle is 0.3-0.5 L / min, and the flow rate of the nozzle near the center of the silicon wafer is greater than the flow rate of the nozzle at the edge of the silicon wafer.

[0035] In some embodiments, adjusting the nozzle angle comprises the following steps:

[0036] S1A: Loosen the outer nut.

[0037] S2A: Move the nozzle to make the rotating spherical connecting block rotate in the spherical groove;

[0038] S3A: setting the liquid outlet angle of the nozzle located at the edge of the silicon wafer to 80°-85°, and testing;

[0039] S4A: making the liquid outlet angle of the nozzle located at the center of the silicon wafer 60°-65°, and testing;

[0040] S5A: Adjust the position of the liquid outlet so that the points where the liquid lands on the silicon wafer are located in the same straight line or staggered into multiple straight lines;

[0041] S6A: Tighten the outer shell nuts on all swivel nozzles.

[0042] In some embodiments, multiple groups of rotating nozzles may operate independently or together.

[0043] The present invention has the advantages of reasonable structure, adaptability to the use of silicon wafers of various specifications, and the ability to fully clean the surface of the wafer and improve the cleaning effect. The present invention ensures that the silicon wafer is coaxial with the turntable component through a positioning component, adsorbs the silicon wafer through a fixing component, and cleans the silicon wafer using a progressive multi-nozzle component. Multiple nozzles ensure that the cleaning liquid and pure water flow are more diffused toward the outer diameter of the wafer, thereby achieving a better cleaning effect; the rotating part rotates in the mounting part to adjust the angle of the liquid outlet, and the rotating part is fixed by a sleeve nut; the nozzles are set at a fixed interval to ensure that the surface of the silicon wafer is cleaned by multiple sprays of cleaning liquid or pure water; the silicon wafer, the pad and the positioning component are driven to rotate together by the central turntable; the circular silicon wafer can be positioned by at least three groups of positioning components, thereby ensuring that the center of the silicon wafer is consistent with the center of the central turntable; the pad is used to facilitate auxiliary support of the silicon wafer, and the positioning block with an inner concave arc surface is used to facilitate contact with the edge of the silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 It is a structural schematic diagram of a multi-nozzle progressive silicon wafer cleaning device of the present invention;

[0045] Figure 2 It is a structural schematic diagram of a progressive multi-nozzle component of a multi-nozzle progressive silicon wafer cleaning device of the present invention;

[0046] Figure 3 It is a cross-sectional view of a progressive multi-nozzle component of a multi-nozzle progressive silicon wafer cleaning device of the present invention;

[0047] Figure 4 The utility model is a schematic diagram of the installation of the cushion block, the positioning component, the fixing component and the turntable component of the multi-nozzle progressive silicon wafer cleaning device of the present invention. DETAILED DESCRIPTION

[0048] The present invention is described in detail below in conjunction with the various embodiments shown in the accompanying drawings, but it should be noted that these embodiments are not limitations of the present invention, and equivalent changes or substitutions in functions, methods or structures made by ordinary technicians in the field based on these embodiments are all within the scope of protection of the present invention.

[0049] In the description of the present invention, it should be noted that, unless otherwise specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a mechanical connection or an electrical connection, or it can be the internal connection of two components. It can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meaning of the terms can be understood according to the specific circumstances.

[0050] like Figure 1As shown, the multi-nozzle progressive silicon wafer cleaning device of the present invention comprises: a progressive multi-nozzle component 1, a cushion block 2, a positioning component 3, a fixing component 4 and a turntable component 5. The fixing component 4 is arranged at the top center of the turntable component 5. The cushion block 2 and the positioning component 3 are arranged in sequence on the top of the turntable component 5 extending outward from the fixing component 4. The progressive multi-nozzle component 1 is arranged above the turntable component 5 with an adjustable height. The silicon wafer is ensured to be coaxial with the turntable component 5 by the positioning component 3, the silicon wafer is adsorbed by the fixing component 4, and the silicon wafer is cleaned by the progressive multi-nozzle component 1. The multiple nozzles 126 ensure that the cleaning liquid and the pure water flow are diffused more toward the outer diameter of the wafer, thereby achieving a better cleaning effect.

[0051] By installing the progressive multi-nozzle component 1 on a lifting bracket, the distance between the multiple nozzles 126 and the silicon wafer can be controlled and adjusted.

[0052] like Figure 2 and Figure 3 As shown, the progressive multi-nozzle component 1 includes: a connecting block 11 and a rotating nozzle 12 detachably mounted at the bottom of the connecting block 11. The rotating nozzles 12 are provided in plurality, and the plurality of rotating nozzles 12 are arranged in one row or in multiple rows. By using the plurality of rotating nozzles 12 and by making the rotating nozzles 12 have a certain inclination angle toward the outer diameter of the wafer, it is possible to ensure that the cleaning liquid flow is diffused more toward the outer diameter of the wafer, thereby achieving a better cleaning effect.

[0053] The rotating nozzle 12 comprises: a mounting portion 121, a rotating portion 122 and a sleeve nut 123. The top of the mounting portion 121 is fixedly connected to the connecting block 11. The top of the mounting portion 121 is provided with a liquid inlet 124. The bottom of the mounting portion 121 is provided with a spherical groove 125. The top of the rotating portion 122 is provided with a spherical connecting block 127 and a nozzle 126. The liquid outlet 128 penetrates the spherical connecting block 127 and the nozzle 126. The spherical connecting block 127 is arranged in the spherical groove 125. The sleeve nut 123 confines the spherical connecting block 127 in the spherical groove 125. The rotating portion 122 rotates in the mounting portion 121 to adjust the angle of the liquid outlet 128. The rotating portion 122 is fixed by the sleeve nut 123.

[0054] The liquid inlet 124 at the top of the mounting portion 121 is connected to the cleaning liquid storage tank and / or the pure water storage tank through a pipeline. Under the action of the liquid circuit control system, the silicon wafer is ultrasonically cleaned. When the liquid flows into the liquid inlet 124 under pressure, it will flow into the spherical groove 125 along the liquid inlet 124, and then flow into the pipeline of the liquid outlet 128 from the top of the liquid outlet 128, until it is sprayed onto the silicon wafer from the end of the liquid outlet 128. The spherical connection block 127 is a line seal before the outer sleeve nut 123 is tightened. After the tightening torque is applied, the spherical connection block 127 undergoes elastic-plastic deformation at the contact point, so that an annular sealing surface is formed between the spherical connection block 127 and the contact line. The spherical sealing structure can be pre-tightened through a threaded connection to achieve a sealing effect.

[0055] In the specific implementation process, multiple rotating nozzles 12 are arranged in a row, because the rotating part 122 will drive the end of the liquid outlet 128 to rotate at multiple angles, so the landing point of the cleaning liquid or pure water on the silicon wafer can be adjusted by the angle of the end of the liquid outlet 128, because when the landing point needs to form a straight line or two straight lines, it can be achieved by rotating the rotating part 122. Of course, in some extreme environments, such as when there are installation space limitations, multiple rotating nozzles 12 are arranged in two or more rows.

[0056] The connection block 11 is provided with a plurality of mounting holes 111, which are arranged in one or more rows, the top of the mounting portion 121 is threadedly connected and fixed to the mounting holes 111, and the rotating nozzle 12 is provided with 2-6 and the spacing between the central axes of two adjacent nozzles 126 is 25mm-55mm. The nozzles 126 are arranged at a fixed spacing to ensure that the surface of the silicon wafer is progressively cleaned by the cleaning liquid or pure water sprayed out by multiple streams.

[0057] During the implementation process, it was tested that the flushing distance of the progressive multi-nozzle component 1 needs to be greater than the radius of the silicon wafer. The nozzle 126 closest to the center of the silicon wafer starts spraying liquid first, and then sprays liquid progressively from the center to the outer end of the wafer. In this way, the water flow can spread from the center of the wafer to the outer end of the wafer, and the cleaning is more comprehensive. Residues such as metal ions remaining on the surface can be removed to the maximum extent.

[0058] like Figure 4 As shown, the turntable component 5 includes: a central turntable 51 and a turntable arm 52. The fixing component 4 is installed at the top center of the central turntable 51 and the central turntable 51 drives the fixing component 4 to rotate together. A plurality of turntable arms 52 are arranged on the side wall of the central turntable 51. The turntable arms 52 are arranged in a circular array with the central axis of the central turntable 51 as the center. The silicon wafer, the pad 2 and the positioning component 3 are driven to rotate together through the central turntable 51.

[0059] The end of the turntable arm 52 away from the center turntable 51 is equipped with a positioning component 3, which includes a positioning block 31 and a moving part 32. The moving part 32 drives the pad 2 to approach or move away from the center turntable 51. There are at least three groups of positioning components 3. Only by using at least three groups of positioning components 3 can the circular silicon wafer be positioned, thereby ensuring that the center of the silicon wafer is consistent with the center of the center turntable 51. When installing the wafer, the positioning block 31 moves toward the center of the turntable by electric means, thereby assisting the wafer in positioning. After positioning, the positioning is moved away from the center of the turntable by electric means again, so as not to affect the rotation and cleaning of the wafer.

[0060] The pad 2 is installed on the turntable arm 52 on one side close to the center turntable 51. The top height of the pad 2 is lower than the top height of the positioning block 31, and the inner side of the positioning block 31 has a concave arc surface. The pad 2 is used to support the silicon wafer, and the positioning block 31 with the concave arc surface is convenient for contacting the edge of the silicon wafer. The pad 2 can mainly play an auxiliary supporting role, which can reduce the slight shaking of large-sized wafers under high-speed rotation. There is a positioning block 31 above the pad 2, which can play an auxiliary positioning role, so that the center of the wafer and the center of the turntable coincide more accurately.

[0061] The fixing part 4 is a vacuum suction cup, and the positioning block 31 and the cushion block 2 are both made of nylon. The positioning block 31 and the cushion block 2 made of nylon ensure that the part in contact with the silicon wafer is a relatively soft material, and the silicon wafer is scratched when placed.

[0062] One end of the liquid outlet 128 away from the liquid inlet 124 has an inward taper of 60°. The diameter of the liquid inlet 124 is 12-15 mm, and the diameter of the end of the liquid outlet 128 is 8-10 mm.

[0063] According to one aspect of the present invention, a cleaning method of a multi-nozzle progressive silicon wafer cleaning device is provided, comprising the following steps:

[0064] S1: Confirm the specifications of the silicon wafer to be cleaned;

[0065] S2: adjusting the angle of the rotating nozzle 12 and the height from the silicon wafer;

[0066] S3: adjusting and setting the flow rate of the rotating nozzle 12;

[0067] S4: adjusting and setting the rotation speed of the central turntable 51;

[0068] S5: placing the silicon wafer to be cleaned on the central turntable 51;

[0069] S6: At least three groups of positioning components 3 are retracted, and the positioning blocks 31 drive the silicon wafer to be coaxial with the central turntable 51;

[0070] S7: the fixing component 4 absorbs the silicon wafer;

[0071] S8: At least three groups of positioning components 3 move outward, and the cushion block 2 drives the positioning block 31 away from the central turntable 51;

[0072] S9: The central turntable 51 rotates while the nozzle 126 sprays the cleaning liquid;

[0073] S10: The nozzle 126 sprays the cleaning liquid for 80-120 seconds and then switches to pure water cleaning;

[0074] S11: After the nozzle 126 sprays pure water for 25-60 seconds, the central turntable 51 stops rotating;

[0075] S12: removing the cleaned silicon wafer;

[0076] S13: placing the silicon wafer to be cleaned on the central turntable 51;

[0077] S14: Repeat the above steps S6-S13.

[0078] The silicon wafer is 12 inches, the number of the rotating nozzles 12 is 5, the height of the liquid outlet 128 of the rotating nozzle 12 is 60-80 mm from the silicon wafer, the rotation speed of the central turntable 51 is 600-800 RPM, the angle of the liquid outlet 128 of the nozzle 126 located at the center of the silicon wafer is 60°-65°, the angle of the liquid outlet 128 of the nozzle 126 located at the edge of the silicon wafer is 80°-85°, and the angle of the liquid outlet 128 of the nozzle 126 located in the middle of the silicon wafer increases from 60°-65° to 80°-85° in an arithmetic progression.

[0079] The silicon wafer is 8 inches, the number of the rotating nozzles 12 is 4, the height of the rotating nozzle 12 from the silicon wafer is 60-80 mm, the rotation speed of the central turntable 51 is 600-800 RPM, the angle of the liquid outlet 128 of the nozzle 126 located at the center of the silicon wafer is 60°-65°, the angle of the liquid outlet 128 of the nozzle 126 located at the edge of the silicon wafer is 80°-85°, and the angle of the liquid outlet 128 of the nozzle 126 located in the middle of the silicon wafer increases from 60°-65° to 80°-85° in an arithmetic progression.

[0080] The silicon wafer is 6 inches, the number of the rotating nozzles 12 is 3, the height of the rotating nozzle 12 from the silicon wafer is 60-80 mm, the rotation speed of the central turntable 51 is 600-800 RPM, the angle of the liquid outlet 128 of the nozzle 126 located at the center of the silicon wafer is 60°-65°, the angle of the liquid outlet 128 of the nozzle 126 located at the edge of the silicon wafer is 80°-85°, and the angle of the liquid outlet 128 of the nozzle 126 located in the middle of the silicon wafer increases from 60°-65° to 80°-85° in an arithmetic progression.

[0081] The flow rate of the nozzle 126 is 0.3-0.5 L / min, and the flow rate of the nozzle 126 close to the center of the silicon wafer is greater than the flow rate of the nozzle 126 at the edge of the silicon wafer.

[0082] Adjustment of the angle of the nozzle 126 includes the following steps:

[0083] S1A: Loosen the outer sleeve nut 123,

[0084] S2A: Move the nozzle to make the rotating spherical connecting block 127 rotate in the spherical groove 125;

[0085] S3A: Make the liquid outlet 128 of the nozzle 126 located at the edge of the silicon wafer at an angle of 80°-85°, and detect;

[0086] S4A: Make the liquid outlet 128 of the nozzle 126 located at the center of the silicon wafer at an angle of 60°-65°, and detect;

[0087] S5A: Adjust the position of the liquid outlet 128 so that the points where the liquid lands on the silicon wafer are located in the same straight line or staggered into multiple straight lines;

[0088] S6A: Tighten the outer sleeve nuts 123 on all rotating nozzles 126.

[0089] The plurality of groups of rotating nozzles 12 may operate independently or together.

[0090] In the specific implementation process, the nozzle 126 closest to the center of the silicon wafer starts spraying liquid first, and then starts spraying liquid progressively from the center to the outer end of the silicon wafer, so that the water flow can spread from the center of the wafer to the outer end of the wafer, the cleaning is more comprehensive, and the metal ions and other residues remaining on the surface can be removed to the maximum extent. The time interval for opening the nozzles 126 in sequence is 3-5s.

[0091] Embodiment 1

[0092] For cleaning of a 12-inch silicon wafer, five rotating nozzles 12 are arranged on the connection block 11, and the spacing between each rotating nozzle is 30 mm. When cleaning, the following steps are performed:

[0093] S1: Confirm 12-inch silicon wafer;

[0094] S2: Adjust the height of the rotating nozzle 12 and the silicon wafer to 80 mm, and the angle of the rotating nozzle 12: loosen the outer sleeve nut 123; bend the nozzle 126 to make the rotating spherical connecting block 127 rotate in the spherical groove 125; make the angle of the liquid outlet 128 of the nozzle 126 located at the edge of the silicon wafer 85°, and use a gauge to check; make the angle of the liquid outlet 128 of the nozzle 126 located at the center of the silicon wafer 60°, and use a gauge to check; the angles of the three liquid outlets 128 in the middle are: 66°, 72° and 77° respectively; adjust the position of the liquid outlet 128 so that the landing point of the liquid on the silicon wafer is in the same straight line; lock the outer sleeve nuts 123 on all rotating nozzles 126;

[0095] S3: Adjust and set the flow rate of the rotating nozzle 12: the flow rate of the nozzle 126 at the center of the silicon wafer is 0.5 L / min, the flow rate of the nozzle 126 at the edge of the silicon wafer is 0.3 L / min, and the flow rates of the three nozzles 126 in the middle are: 0.45 L / min, 0.4 L / min and 0.35 L / min;

[0096] S4: adjusting and setting the rotation speed of the central turntable 51 to 600 RPM;

[0097] S5: placing the silicon wafer to be cleaned on the central turntable 51;

[0098] S6: At least three groups of positioning components 3 are retracted, and the positioning blocks 31 drive the silicon wafer to be coaxial with the central turntable 51;

[0099] S7: the fixing component 4 absorbs the silicon wafer;

[0100] S8: At least three groups of positioning components 3 move outward, and the cushion block 2 drives the positioning block 31 away from the central turntable 51;

[0101] S9: The central turntable 51 rotates while the nozzle 126 sprays the cleaning liquid;

[0102] S10: The nozzle 126 sprays the cleaning liquid for 120 seconds and then switches to pure water cleaning;

[0103] S11: After the nozzle 126 sprays pure water for 60 seconds, the central turntable 51 stops rotating;

[0104] S12: removing the cleaned silicon wafer;

[0105] S13: Place the silicon wafer to be cleaned on the central turntable 51

[0106] S14: Repeat the above steps S6-S13.

[0107] Embodiment 2

[0108] For cleaning of 12-inch silicon wafers, 10 rotating nozzles 12 are arranged on the connection block 11, and the spacing between each rotating nozzle is 15 mm. Five rotating nozzles 12 form a group, one group is connected to the cleaning liquid, and the other group is connected to pure water. When cleaning, the following steps are performed:

[0109] S1: Confirm 12-inch silicon wafer;

[0110] S2: Adjust the height of the rotating nozzle 12 and the silicon wafer to 80 mm, and the angle of the rotating nozzle 12: loosen the outer sleeve nut 123; bend the nozzle 126 to make the rotating spherical connecting block 127 rotate in the spherical groove 125; make the angle of the liquid outlet 128 of the two nozzles 126 located at the edge of the silicon wafer 85°, and use a gauge to check; make the angle of the liquid outlet 128 of the two nozzles 126 located at the center of the silicon wafer 60°, and use a gauge to check; the angles of the six liquid outlets 128 in the middle are set to 66°, 72° and 77° in pairs; adjust the position of the liquid outlet 128 so that the landing point of the liquid on the silicon wafer is located in two straight lines; lock the outer sleeve nuts 123 on all rotating nozzles 126;

[0111] S3: Adjust and set the flow rate of the rotating nozzle 12: the flow rate of the nozzle 126 at the center of the silicon wafer is 0.5 L / min, the flow rate of the nozzle 126 at the edge of the silicon wafer is 0.3 L / min, and the flow rates of the three nozzles 126 in the middle are: 0.45 L / min, 0.4 L / min and 0.35 L / min;

[0112] S4: adjusting and setting the rotation speed of the central turntable 51 to 600 RPM;

[0113] S5: placing the silicon wafer to be cleaned on the central turntable 51;

[0114] S6: At least three groups of positioning components 3 are retracted, and the positioning blocks 31 drive the silicon wafer to be coaxial with the central turntable 51;

[0115] S7: the fixing component 4 absorbs the silicon wafer;

[0116] S8: At least three groups of positioning components 3 move outward, and the cushion block 2 drives the positioning block 31 away from the central turntable 51;

[0117] S9: The central turntable 51 rotates while the nozzle 126 sprays the cleaning liquid;

[0118] S10: The nozzle 126 sprays the cleaning liquid for 120 seconds and then switches to pure water cleaning;

[0119] S11: After the nozzle 126 sprays pure water for 60 seconds, the central turntable 51 stops rotating;

[0120] S12: removing the cleaned silicon wafer;

[0121] S13: placing the silicon wafer to be cleaned on the central turntable 51;

[0122] S14: Repeat the above steps S6-S13.

[0123] Embodiment 3

[0124] For cleaning of 8-inch silicon wafers, four rotating nozzles 12 are provided on the connection block 11, and the spacing between each rotating nozzle is 25 mm. When cleaning, the following steps are performed:

[0125] S1: Confirm 8-inch silicon wafer;

[0126] S2: Adjust the height of the rotating nozzle 12 and the silicon wafer to 70 mm, and the angle of the rotating nozzle 12: loosen the outer sleeve nut 123; bend the nozzle 126 to make the rotating spherical connecting block 127 rotate in the spherical groove 125; make the angle of the liquid outlet 128 of the nozzle 126 located at the edge of the silicon wafer 85°, and use a gauge to check; make the angle of the liquid outlet 128 of the nozzle 126 located at the center of the silicon wafer 60°, and use a gauge to check; the angles of the two middle liquid outlets 128 are: 68.5° and 77° respectively; adjust the position of the liquid outlet 128 so that the landing point of the liquid on the silicon wafer is in the same straight line; lock the outer sleeve nuts 123 on all rotating nozzles 126;

[0127] S3: Adjust and set the flow rate of the rotating nozzle 12: the flow rate of the nozzle 126 at the center of the silicon wafer is 0.5 L / min, the flow rate of the nozzle 126 at the edge of the silicon wafer is 0.3 L / min, and the flow rates of the two nozzles 126 in the middle are: 0.43 L / min and 0.37 L / min;

[0128] S4: adjusting and setting the rotation speed of the central turntable 51 to 700 RPM;

[0129] S5: placing the silicon wafer to be cleaned on the central turntable 51;

[0130] S6: At least three groups of positioning components 3 are retracted, and the positioning blocks 31 drive the silicon wafer to be coaxial with the central turntable 51;

[0131] S7: the fixing component 4 absorbs the silicon wafer;

[0132] S8: At least three groups of positioning components 3 move outward, and the cushion block 2 drives the positioning block 31 away from the central turntable 51;

[0133] S9: The central turntable 51 rotates while the nozzle 126 sprays the cleaning liquid;

[0134] S10: The nozzle 126 sprays the cleaning liquid for 100 seconds and then switches to pure water cleaning;

[0135] S11: After the nozzle 126 sprays pure water for 50 seconds, the central turntable 51 stops rotating;

[0136] S12: removing the cleaned silicon wafer;

[0137] S13: placing the silicon wafer to be cleaned on the central turntable 51;

[0138] S14: Repeat the above steps S6-S13.

[0139] Embodiment 4

[0140] For cleaning of a 6-inch silicon wafer, six rotating nozzles 12 are arranged on the connection block 11, and the spacing between each rotating nozzle is 30 mm. When cleaning, the following steps are performed:

[0141] S1: Confirm 6-inch silicon wafer;

[0142] S2: Adjust the height of the rotating nozzle 12 and the silicon wafer to 60 mm, and the angle of the rotating nozzle 12: loosen the outer sleeve nut 123; bend the nozzle 126 to make the rotating spherical connecting block 127 rotate in the spherical groove 125; make the angle of the liquid outlet 128 of the nozzle 126 located at the edge of the silicon wafer 85°, and use a gauge to check; make the angle of the liquid outlet 128 of the nozzle 126 located at the center of the silicon wafer 60°, and use a gauge to check; the angles of the four liquid outlets 128 in the middle are: 65°, 70°, 75° and 77° respectively; adjust the position of the liquid outlet 128 so that the landing point of the liquid on the silicon wafer is in the same straight line; lock the outer sleeve nuts 123 on all rotating nozzles 126;

[0143] S3: Adjust and set the flow rate of the rotating nozzle 12: the flow rate of the nozzle 126 at the center of the silicon wafer is 0.5 L / min, the flow rate of the nozzle 126 at the edge of the silicon wafer is 0.3 L / min, and the flow rates of the four nozzles 126 in the middle are: 0.46 L / min, 0.42 L / min, 0.38 L / min and 0.34 L / min;

[0144] S4: adjusting and setting the rotation speed of the central turntable 51 to 800 RPM;

[0145] S5: placing the silicon wafer to be cleaned on the central turntable 51;

[0146] S6: At least three groups of positioning components 3 are retracted, and the positioning blocks 31 drive the silicon wafer to be coaxial with the central turntable 51;

[0147] S7: the fixing component 4 absorbs the silicon wafer;

[0148] S8: At least three groups of positioning components 3 move outward, and the cushion block 2 drives the positioning block 31 away from the central turntable 51;

[0149] S9: The central turntable 51 rotates while the nozzles 126 spray cleaning liquid, and the center, edge and middle nozzles 126 are turned on and operated;

[0150] S10: The nozzle 126 sprays the cleaning liquid for 90 seconds and then switches to pure water cleaning;

[0151] S11: After the nozzle 126 sprays pure water for 40 seconds, the central turntable 51 stops rotating;

[0152] S12: removing the cleaned silicon wafer;

[0153] S13: placing the silicon wafer to be cleaned on the central turntable 51;

[0154] S14: Repeat the above steps S6-S13.

[0155] It can be seen from this that after the number of rotating nozzles 12 provided on the connecting block 11 is increased, various types of silicon wafers can be taken into account, and it is just necessary to control different rotating nozzles 12 to work.

[0156] The above are only some embodiments of the present invention. It should be pointed out that for ordinary technicians in this field, other modifications and improvements can be made without departing from the creative concept of the present invention, which all belong to the protection scope of the present invention.

Claims

1. A method for cleaning silicon wafers using a multi-nozzle progressive silicon wafer cleaning device, characterized in that: The following steps are involved: S1: Confirm the specifications of the silicon wafer to be cleaned; S2: Adjust the rotating nozzle angle and the height from the silicon wafer; S3: adjust and set the flow rate of the rotating nozzle; S4: Adjust and set the rotation speed of the center turntable; S5: placing the silicon wafer to be cleaned on the central turntable; S6: At least three groups of positioning components are retracted, and the positioning blocks drive the silicon wafer to be coaxial with the central turntable; S7: The fixing component absorbs the silicon wafer; S8: At least three groups of positioning components move outward, and the cushion block drives the positioning block away from the center turntable; S9: The central turntable rotates while the nozzle sprays the cleaning fluid; S10: After the nozzle sprays the cleaning solution for 80-120s, it switches to pure water cleaning. When cleaning with cleaning solution and clean water, the flushing distance of the progressive multi-nozzle component needs to be longer than the radius of the silicon wafer. The nozzle closest to the center of the silicon wafer starts spraying first, and then sprays progressively from the center to the outer end of the wafer. The time interval for opening the nozzles in sequence is 3-5s, so that the water flow can spread from the center of the wafer to the outer end of the wafer; S11: After the nozzle sprays pure water for 25-60 seconds, the central turntable stops rotating; S12: removing the cleaned silicon wafer; S13: placing the silicon wafer to be cleaned on the central turntable; S14: repeat the above steps S6-S13; The multi-nozzle progressive silicon wafer cleaning device comprises: a progressive multi-nozzle component, a cushion block, a positioning component, a fixing component and a turntable component, wherein the fixing component is arranged at the center of the top of the turntable component, and the cushion block and the positioning component are arranged in sequence on the top of the turntable component extending outward from the fixing component as the center, and a height-adjustable progressive multi-nozzle component is arranged above the turntable component, and the progressive multi-nozzle component comprises: a connecting block and a rotating nozzle detachably mounted at the bottom of the connecting block, and the rotating nozzle is provided with a plurality of them, and the plurality of rotating nozzles are arranged in one row or a plurality of rows; The rotating nozzle comprises: a mounting portion, a rotating portion and a sleeve nut, the top of the mounting portion is fixedly connected to the connecting block, the top of the mounting portion is provided with a liquid inlet, the bottom of the mounting portion is provided with a spherical groove, the top of the rotating portion is provided with a spherical connecting block and a nozzle, the spherical connecting block and the nozzle are provided with a liquid outlet penetrating therethrough, the spherical connecting block is provided in the spherical groove, and the sleeve nut confines the spherical connecting block in the spherical groove; The connection block is provided with a plurality of mounting holes, the mounting holes are arranged in one row or multiple rows, the top of the mounting portion is threadedly connected and fixed to the mounting holes, and the rotating nozzles are provided with 2-6; The turntable component includes: a central turntable and a turntable arm. A fixed component is installed in the center of the top of the central turntable and the central turntable drives the fixed component to rotate together. A plurality of turntable arms are arranged on the side wall of the central turntable. The plurality of turntable arms are distributed in a circular array with the central axis of the central turntable as the center. A positioning component is installed at one end of the turntable arm away from the central turntable, and the positioning component includes: a positioning block and a moving part, and the moving part drives the positioning block to approach or move away from the central turntable. The positioning component is provided with at least three groups; The positioning block is installed on a side of the cushion block away from the central turntable, the top height of the cushion block is lower than the top height of the positioning block, and the inner side of the positioning block has a concave arc surface; The fixing component is a vacuum suction cup, and the positioning block and the cushion block are both made of nylon.

2. The method for cleaning a silicon wafer according to claim 1, characterized in that: The end of the liquid outlet away from the liquid inlet has an inward taper, the taper is a 60° conical tube, the diameter of the liquid inlet is 12-15mm, and the diameter of the end of the liquid outlet is 8-10mm.

3. The method for cleaning a silicon wafer according to claim 1, characterized in that: The silicon wafer is 12 inches, the number of the rotating nozzles is 5, the height of the liquid outlet of the rotating nozzle from the silicon wafer is 60-80 mm, the rotation speed of the central turntable is 600-800 RPM, the liquid outlet angle of the nozzle located at the center of the silicon wafer is 60°-65°, the liquid outlet angle of the nozzle located at the edge of the silicon wafer is 80°-85°, and the liquid outlet angle of the nozzle located in the middle of the silicon wafer increases from 60°-65° to 80°-85° in an arithmetic progression.

4. The method for cleaning a silicon wafer according to claim 3, characterized in that: The silicon wafer is 8 inches, the number of the rotating nozzles is 4, the height of the rotating nozzles from the silicon wafer is 60-80 mm, the rotation speed of the central turntable is 600-800 RPM, the liquid outlet angle of the nozzle located at the center of the silicon wafer is 60°-65°, the liquid outlet angle of the nozzle located at the edge of the silicon wafer is 80°-85°, and the liquid outlet angle of the nozzle located in the middle of the silicon wafer increases from 60°-65° to 80°-85° in an arithmetic progression.

5. The method for cleaning a silicon wafer according to claim 3, characterized in that: The silicon wafer is 6 inches, the number of the rotating nozzles is 3, the height of the rotating nozzles from the silicon wafer is 60-80 mm, the rotation speed of the central turntable is 600-800 RPM, the liquid outlet angle of the nozzle located at the center of the silicon wafer is 60°-65°, the liquid outlet angle of the nozzle located at the edge of the silicon wafer is 80°-85°, and the liquid outlet angle of the nozzle located in the middle of the silicon wafer increases from 60°-65° to 80°-85° in an arithmetic progression.

6. The method for cleaning a silicon wafer according to any one of claims 3 to 5, characterized in that: The flow rate of the nozzle is 0.3-0.5 L / min, and the flow rate of the nozzle close to the center of the silicon wafer is greater than the flow rate of the nozzle at the edge of the silicon wafer.

7. The method for cleaning a silicon wafer according to claim 3, characterized in that: The adjustment of the nozzle angle comprises the following steps: S1A: Loosen the outer nut. S2A: Move the nozzle to make the rotating spherical connecting block rotate in the spherical groove; S3A: setting the liquid outlet angle of the nozzle located at the edge of the silicon wafer to 80°-85°, and testing; S4A: setting the liquid outlet angle of the nozzle located at the center of the silicon wafer to 60°-65°, and testing; S5A: Adjust the position of the liquid outlet so that the points where the liquid lands on the silicon wafer are located in the same straight line or staggered into multiple straight lines; S6A: Tighten the outer shell nuts on all swivel nozzles.

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