A new type of packaged power module

Abstract

The present invention relates to a novel packaged power module, comprising: an upper component and a lower component, a laminated structure is constructed by the upper component and the lower component to realize a three-dimensional commutation circuit; the upper component comprises: a plurality of upper bridge arm chips, the upper bridge arm chips are arranged on a first positive electrode layer and a second positive electrode layer, a plurality of lower bridge arm chips, the lower bridge arm chips are arranged on a first upper AC electrode layer and a second upper AC electrode layer; the lower component comprises: a bottom AC electrode layer, the bottom AC electrode layer is respectively connected to the upper bridge arm chip, the first upper AC electrode layer and the second upper AC electrode layer. The present invention can make the parallel switch tube chips be arranged in groups in anti-phase parallel, and two adjacent groups of bridge arms are anti-parallel in the same plane, which can reduce parasitic inductance and improve switch performance.

Description

Technical Field

[0001] The invention relates to the field of electronic technology, and in particular to a novel packaged power module. Background Art

[0002] With the rapid development of modern transportation, aerospace and other fields, power electronic power modules (abbreviated as power modules) have been widely used, and higher requirements have been put forward for the performance of power modules.

[0003] In order to improve the efficiency of the power module, it is necessary to achieve a higher switching frequency of the power module. However, the traditional power module layout structure has a high parasitic inductance, and the power chip is subjected to a high overvoltage during the switching process, increasing the risk of overvoltage breakdown of the power chip.

[0004] Therefore, in high-frequency, high-power applications, parasitic inductance is a difficult problem that power modules need to overcome, and parasitic inductance needs to be reduced to ensure reliable operation of the power modules. Summary of the invention

[0005] The object of the present invention is to provide a novel packaged power module to reduce parasitic inductance and improve switch performance.

[0006] To achieve the above object, the present invention provides the following solutions:

[0007] A new type of packaged power module, comprising:

[0008] An upper component and a lower component, wherein a stacked structure is constructed by the upper component and the lower component to realize a three-dimensional commutation circuit;

[0009] The upper component includes: a plurality of upper bridge arm chips, which are arranged on the first positive electrode layer and the second positive electrode layer, and a plurality of lower bridge arm chips, which are arranged on the first upper AC electrode layer and the second upper AC electrode layer; wherein the first positive electrode layer is arranged diagonally with the second positive electrode layer, the first upper AC electrode layer is arranged diagonally with the second upper AC electrode layer, the upper bridge arm chips on the first positive electrode layer and the lower bridge arm chips on the first upper AC electrode layer form a first group of bridge arms, and the upper bridge arm chips on the second positive electrode layer and the lower bridge arm chips on the second upper AC electrode layer form a second group of bridge arms, which are used to form an anti-parallel structure, and the power currents of two adjacent groups of bridge arms flow in opposite directions, so as to achieve mutual inductance cancellation in the plane;

[0010] The lower layer component includes: a bottom AC electrode layer, and the bottom AC electrode layer is respectively connected to the upper bridge arm chip, the first upper AC electrode layer and the second upper AC electrode layer.

[0011] Optionally, the upper bridge arm chip is provided with a first control end, a first switch end and a second switch end, the first control end and the first switch end are both electrically connected to the driving board, and the second switch end is respectively electrically connected to the first positive electrode layer and the second positive electrode layer.

[0012] Optionally, the lower bridge arm chip is provided with a second control terminal, a third switch terminal and a fourth switch terminal, the second control terminal and the third switch terminal are electrically connected to the driving board, the third switch terminal is also electrically connected to the first negative electrode terminal and the second negative electrode terminal, and the first negative electrode terminal and the second negative electrode terminal are arranged diagonally, and the fourth switch terminal is electrically connected to the first upper AC electrode layer and the second upper AC electrode layer.

[0013] Optionally, the upper component also includes: a first positive electrode layer substrate, on which the first positive electrode layer is arranged, a second positive electrode layer substrate, on which the second positive electrode layer is arranged, a first upper AC electrode layer substrate, on which the first upper AC electrode layer is arranged on the first upper AC electrode layer substrate; and a second upper AC electrode layer substrate, on which the second upper AC electrode layer is arranged on the second upper AC electrode layer substrate.

[0014] Optionally, the lower component further includes: a bottom substrate, on which the bottom AC electrode layer is arranged.

[0015] Optionally, the upper bridge arm chip and the lower bridge arm chip are both: IGBT devices, triodes or MOS tubes.

[0016] Optionally, the bottom AC electrode layer includes: an upper copper layer, a lower copper layer and an intermediate ceramic layer, wherein the upper copper layer, the lower copper layer and the intermediate ceramic layer are connected in sequence.

[0017] Optionally, the module also includes:

[0018] Thermistor, which is installed near the lower bridge arm chip or the upper bridge arm chip and connected to the driver board through bonding wires, is used to determine the temperature inside the power module.

[0019] Optionally, the module also includes: a first terminal member, serving as an AC electrode lead-out terminal, one end of the first terminal member being electrically connected to the lead-out end point of the bottom AC electrode layer, and the other end of the first terminal member extending to the outside of the bottom substrate; a second terminal member, serving as a positive electrode lead-out terminal, one end of the second terminal member being electrically connected to the lead-out end point of the positive electrode layer, and the other end of the second terminal member extending to above the positive electrode substrate; a third terminal member, serving as a negative electrode lead-out terminal, one end of the third terminal member being electrically connected to the third switch terminal, and the other end of the third terminal member extending to above the upper AC electrode substrate.

[0020] The beneficial effects of the present invention are:

[0021] The present invention discloses a plurality of upper bridge arm chips, each of which is provided with a first control terminal, a first input terminal and a first output terminal; a first positive electrode layer, electrically connected to the first input terminal; a second positive electrode layer, electrically connected to the first input terminal; a bottom AC electrode layer, electrically connected to the first output terminal; a plurality of lower bridge arm chips, each of which is provided with a second control terminal, a second input terminal and a second output terminal; a driving board as a whole, with its metal layer divided into blocks, electrically connected to the first control terminal and the second control terminal; a first negative electrode terminal, electrically connected to the second output terminal; a second negative electrode terminal, electrically connected to the second output terminal; a first upper AC electrode layer, electrically connected to the second input terminal and the bottom AC electrode layer; a second upper AC electrode layer, electrically connected to the second input terminal and the bottom AC electrode layer; a first positive electrode layer substrate, arranged on the first positive electrode layer substrate The first positive electrode layer substrate is arranged below the second positive electrode layer; the second positive electrode layer substrate is arranged below the second positive electrode layer; the first upper AC electrode layer substrate is arranged below the first upper AC electrode layer; the second upper AC electrode layer substrate is arranged below the second upper AC electrode layer; the bottom AC electrode layer substrate is arranged below the bottom AC electrode layer; at the same time, the first positive electrode layer substrate, the second positive electrode layer substrate, the first upper AC electrode layer substrate, and the second upper AC electrode layer substrate are arranged on the same layer, and are placed above the bottom AC electrode layer as four small substrates to form a stacked structure; and the first positive electrode layer substrate and the second positive electrode layer substrate are arranged diagonally; the first upper AC electrode layer substrate and the second upper AC electrode layer substrate are arranged diagonally; therefore, the parallel switch tubes are grouped, the groups are reversely paralleled, and the power currents of two adjacent groups of bridge arms flow in opposite directions. The stacked setting divides the chip commutation circuit into two layers, an upper layer and an lower layer, to form a multi-layer ceramic substrate structure. The currents in the upper and lower layers flow in opposite directions, constructing a three-dimensional commutation circuit to form a strong coupling, greatly reducing parasitic inductance and improving the switching performance of the power module. The parallel switch tubes are grouped and connected in reverse parallel between the groups. The power currents of the two adjacent groups of bridge arms flow in opposite directions, which can achieve mutual inductance cancellation within the plane, further reduce parasitic inductance and improve the switching performance of the power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0023] Figure 1 A schematic diagram of a novel packaged power module structure according to an embodiment of the present invention;

[0024] Figure 2 It is a schematic structural diagram of a bottom substrate in a power module according to an embodiment of the present invention;

[0025] Figure 3 A schematic diagram of a ceramic substrate stacking method in a power module according to an embodiment of the present invention;

[0026] Figure 4 This is a schematic diagram of the overall arrangement structure of a ceramic substrate in a power module according to an embodiment of the present invention;

[0027] Figure 5 This is a schematic structural diagram of a novel packaged power module with electrode terminals according to an embodiment of the present invention;

[0028] Among them, 1-upper bridge arm chip, 2-lower bridge arm chip, 3(a)-first positive electrode layer, 3(b)-second positive electrode layer, 4(a)-first negative electrode terminal, 4(b)-second negative electrode terminal, 5-thermistor, 6-driving board, 7-bottom AC electrode layer, 8-positive electrode terminal, 8(a)-first positive electrode terminal, 8(b)-second positive electrode terminal, 9(a)-first upper AC electrode layer, 9(b)-second upper AC electrode layer, 10-AC electrode terminal, 11-middle ceramic layer, 12(a)-upper copper layer, 12(b)-lower copper layer, 13-chip bare die, 14-silver sintered layer, 15-electrode layer. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0030] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0031] The present invention discloses a novel packaged power module, comprising: an upper component and a lower component, a laminated structure is constructed by the upper component and the lower component to realize a three-dimensional commutation circuit; the upper component comprises: a plurality of upper bridge arm chips 1, the upper bridge arm chips 1 are arranged on a first positive electrode layer 3 (a) and a second positive electrode layer 3 (b), and a plurality of lower bridge arm chips, the lower bridge arm chips are arranged on a first upper AC electrode layer 9 (a) and a second upper AC electrode layer 9 (b); wherein the first positive electrode layer 3 (a) and the second positive electrode layer 3 (b) are arranged diagonally, and the first upper AC electrode layer 9 (a) and the second upper AC electrode layer 9 (b) are arranged diagonally. Layer 9(b) is arranged diagonally, the upper bridge arm chip 1 on the first positive electrode layer 3(a) and the lower bridge arm chip on the first upper AC electrode layer 9(a) form a first group of bridge arms, the upper bridge arm chip 1 on the second positive electrode layer 3(b) and the lower bridge arm chip on the second upper AC electrode layer 9(b) form a second group of bridge arms, which are used to form an anti-parallel structure, and the power currents of two adjacent groups of bridge arms flow in opposite directions to achieve mutual inductance cancellation in the plane; the lower layer components include: a bottom AC electrode layer 7, and the bottom AC electrode layer 7 is respectively connected to the upper bridge arm chip 1, the first upper AC electrode layer 9(a) and the second upper AC electrode layer 9(b).

[0032] The upper bridge arm chip 1 is provided with a first control terminal, a first switch terminal and a second switch terminal. The first control terminal and the first switch terminal are both electrically connected to the driving board 6, and the second switch terminal is electrically connected to the first positive electrode layer 3 (a) and the second positive electrode layer 3 (b) respectively.

[0033] The lower bridge arm chip is provided with a second control terminal, a third switch terminal and a fourth switch terminal. The second control terminal and the third switch terminal are both electrically connected to the driving board 6. The third switch terminal is also electrically connected to the first negative electrode terminal 4(a) and the second negative electrode terminal 4(b), and the first negative electrode terminal 4(a) and the second negative electrode terminal 4(b) are arranged diagonally. The fourth switch terminal is electrically connected to the first upper AC electrode layer 9(a) and the second upper AC electrode layer 9(b).

[0034] The upper component also includes: a positive electrode terminal 8, the positive electrode terminal 8 is arranged on the first positive electrode layer 3(a) and the second positive electrode layer 3(b), a first positive electrode layer substrate, the first positive electrode layer is arranged on the first positive electrode layer substrate, a second positive electrode layer substrate, the second positive electrode layer 3(b) is arranged on the second positive electrode layer substrate, a first upper AC electrode layer substrate, the first upper AC electrode layer is arranged on the first upper AC electrode layer substrate; a second upper AC electrode layer substrate, the second upper AC electrode layer 9(b) is arranged on the second upper AC electrode layer substrate.

[0035] The lower layer components also include: a bottom substrate, on which a bottom AC electrode layer 7 is arranged, specifically:

[0036] like Figure 1As shown, the power module of this embodiment includes: multiple upper bridge arm chips 1, a first positive electrode layer 3(a), a second positive electrode layer 3(b), a positive electrode terminal 8, multiple lower bridge arm chips 2, a first negative electrode terminal 4(a), a second negative electrode terminal 4(b), a driving board 6, a first upper AC electrode layer 9(a), a second upper AC electrode layer 9(b) and a bottom AC electrode layer 7, and a thermistor 5; wherein the upper bridge arm chip 1 is provided with a first control end, a first switch end and a second switch end; the driving board 6 is electrically connected to the first control end of the upper bridge arm chip 1; the first positive electrode layer 3(a) and the second positive electrode layer 3(b) are both electrically connected to the second switch end of the upper bridge arm chip 1; the lower bridge arm chip 2 is provided with a second control end, a third switch end and a fourth switch end; the driving board 6 is electrically connected to the lower bridge arm chip 2 is electrically connected to the second control end of the lower bridge arm chip 2; the first negative electrode terminal 4(a) and the second negative electrode terminal 4(b) are both electrically connected to the third switch end of the lower bridge arm chip 2; the bottom AC electrode layer 7 is electrically connected to the first switch end of the upper bridge arm chip 1 and the first upper AC electrode layer 9(a) and the second upper AC electrode layer 9(b); the first upper AC electrode layer 9(a) and the second upper AC electrode layer 9(b) are both electrically connected to the fourth switch end of the lower bridge arm chip 2; the first positive electrode layer 3(a), the second positive electrode layer 3(b), the first upper AC electrode layer 9(a), the second upper AC electrode layer 9(b) and the thermistor 5 are all arranged on the bottom AC electrode layer 7; the upper bridge arm chip 1 and the positive electrode terminal 8 are arranged on the positive electrode layer; the lower bridge arm chip 2 is arranged on the upper AC electrode layer.

[0037] In this embodiment, the commutation circuit corresponding to the upper bridge arm chip 1 of the first commutation circuit is: positive electrode terminal 8-first positive electrode layer 3(a)-upper bridge arm chip 1-bottom AC electrode layer 7-first upper AC electrode layer 9(a). The commutation circuit corresponding to the lower bridge arm chip 2 of the first commutation circuit is: first upper AC electrode layer 9(a)-lower bridge arm chip 2-first negative electrode terminal 4(a).

[0038] In this embodiment, the commutation circuit corresponding to the upper bridge arm chip 1 of the second commutation circuit is: positive electrode terminal 8-second positive electrode layer 3(b)-upper bridge arm chip 1-bottom AC electrode layer 7-second upper AC electrode layer 9(b). The commutation circuit corresponding to the lower bridge arm chip 2 of the second commutation circuit is: second upper AC electrode layer 9(b)-lower bridge arm chip 2-second negative electrode terminal 4(b).

[0039] Therefore, in this embodiment, the commutation circuit is arranged in a three-dimensional space, and the currents of the upper commutation circuit positive electrode terminal 8-positive electrode layer-upper bridge arm chip 1 and the upper AC electrode layer-lower bridge arm chip 2-negative electrode terminal are opposite to the current flow direction of the bottom AC electrode layer 7, forming mutual inductance cancellation, which greatly reduces the parasitic inductance of the commutation circuit and improves the switching performance of the power module; and the left and right (a) and (b) two groups of parallel switching tubes are arranged in reverse parallel, and the power currents of the two adjacent groups of bridge arms flow in opposite directions, realizing mutual inductance cancellation in the plane, further reducing the parasitic inductance and improving the switching performance of the power module.

[0040] In this embodiment, the bottom AC electrode layer 7 is arranged at the bottom, and the first positive electrode layer 3(a), the second positive electrode layer 3(b), the first upper AC electrode layer 9(a), and the second upper AC electrode layer 9(b) are arranged on the bottom AC electrode layer 7 in the same layer to form a multi-layer ceramic substrate structure, and the first positive electrode layer 3(a) and the second positive electrode layer 3(b) are arranged diagonally, and the first upper AC electrode layer 9(a) and the second upper AC electrode layer 9(b) are arranged diagonally to form an anti-parallel structure. The above-mentioned six-phase bridge arm and the multi-layer ceramic substrate arrangement construct a three-dimensional commutation circuit, and the commutation circuit forms a strong coupling, which greatly reduces the parasitic inductance.

[0041] The overall structure of the chip and the multi-layer ceramic substrate of this embodiment is shown in the figure below. Figure 4 As shown, the bottom AC electrode layer 7 is placed at the bottom layer, the first positive electrode layer 3(a), the second positive electrode layer 3(b), the first upper AC electrode layer 9(a), and the second upper AC electrode layer 9(b) are arranged on the same layer on the bottom AC electrode layer 7, and the first positive electrode layer 3(a) and the second positive electrode layer 3(b) are arranged diagonally, and the first upper AC electrode layer 9(a) and the second upper AC electrode layer 9(b) are arranged diagonally, forming a three-dimensional commutation circuit while the two groups of chips are arranged in reverse parallel.

[0042] The upper bridge arm chip 1 and the lower bridge arm chip 2 are both: IGBT devices, triodes or MOS tubes, specifically:

[0043] In one application scenario, the upper bridge arm chip 1 of this embodiment may include an IGBT device, whose gate electrode is electrically connected to the driving board 6 as the first control end of the upper bridge arm chip 1, whose source is electrically connected to the bottom AC electrode layer 7 as the first switch end of the upper bridge arm chip 1, and whose drain is electrically connected to the first positive electrode layer 3(a) and the second positive electrode layer 3(b) as the second switch end of the upper bridge arm chip 1; the lower bridge arm chip 2 may include an IGBT device, whose gate electrode is electrically connected to the driving board 6 as the second control end of the lower bridge arm chip 2, whose source is electrically connected to the first negative electrode terminal 4(a) and the second negative electrode terminal 4(b) as the third switch end of the lower bridge arm chip 2, and whose drain is electrically connected to the first upper AC electrode layer 9(a) and the second upper AC electrode layer 9(b) as the fourth switch end of the lower bridge arm chip 2.

[0044] In other embodiments of this embodiment, the bridge arm chip may further include a diode for protecting the bridge arm chip when a sudden change occurs in voltage or current.

[0045] In other embodiments, other switch tubes may be used to replace the IGBT device, such as a triode or a MOS tube.

[0046] The bottom AC electrode layer 7 includes: an upper copper layer 12 (a), a lower copper layer 12 (b) and an intermediate ceramic layer 11, wherein the upper copper layer 12 (a), the lower copper layer 12 (b) and the intermediate ceramic layer 11 are connected in sequence, specifically:

[0047] In this embodiment, the bottom AC electrode layer 7 adopts a classic three-layer arrangement, such as Figure 2 The top view (left) and bottom view (right) shown have an upper copper layer 12 (a), a lower copper layer 12 (b), an intermediate ceramic layer 11, and a copper-ceramic-copper connection.

[0048] The chip connection method in this embodiment is as follows Figure 3 As shown in the exploded diagram, the lower bridge arm chip 2 is taken as an example. Figure 3 The middle chip bare chip 13) is connected to the upper AC electrode layer 9 (i.e. Figure 3 The middle electrode layer 15 is connected together, and the upper bridge arm chip 1 is connected in the same way as the lower bridge arm chip, has high temperature resistance and is not easy to fall off due to high temperature welding.

[0049] The module also includes: a thermistor 5, which is installed near the lower bridge arm chip or the upper bridge arm chip 1 and connected to the driving board 6 through a bonding wire, and is used to determine the temperature in the power module, specifically:

[0050] In this embodiment, there is a thermistor 5, which is installed near the chip and the substrate and connected to the driving board 6 through bonding wires. It can accurately and sensitively determine the temperature inside the power module and provide effective information for monitoring its reliability in high-temperature applications.

[0051] The module further includes: a first terminal, one end of which is electrically connected to the lead-out terminal of the bottom AC electrode layer, and the other end of which extends to the outside of the substrate; a second terminal, one end of which is electrically connected to the lead-out terminal of the positive electrode layer, and the other end of which extends to the top of the substrate; a third terminal, one end of which is electrically connected to the third switch terminal, and the other end of which extends to the top of the substrate, specifically:

[0052] In this embodiment, the first terminal is the AC electrode terminal 10; the second terminal includes the first positive electrode terminal 8 (a) and the second positive electrode terminal 8 (b); the third terminal includes the first negative electrode terminal 4 (a) and the second negative electrode terminal 4 (b); Figure 5 As shown in the figure, one end of the first terminal is electrically connected to the lead-out terminal of the bottom AC electrode layer 7, and the other end extends to the outside of the substrate; one end of the second terminal is electrically connected to the lead-out terminal of the first positive electrode layer 3(a) and the second positive electrode layer 3(b), and the other end extends to the top of the substrate; one end of the third terminal is electrically connected to the third switch terminal, and the other end extends to the top of the substrate; all have high stability.

[0053] Optionally, the positive electrode layer, the upper AC electrode layer 9, the bottom AC electrode layer 7 and the driving board 6 of this embodiment may be a copper-aluminum alloy layer or a copper layer, etc., which can increase the conductivity.

[0054] The above-mentioned connectors are metal connectors, such as copper connectors or copper-aluminum alloy connectors.

[0055] The power module implemented in this embodiment can be a three-phase full-bridge power module. Specifically, the power module of this embodiment includes twelve lower bridge arm chips 2 and twelve upper bridge arm chips 1, and the twelve lower bridge arm chips 2 are divided into two groups (a) and (b) in a group of six, and are symmetrically distributed on the first upper AC electrode layer 9 (a) and the second upper AC electrode layer 9 (b) at the opposite corners, and the twelve upper bridge arm chips 1 are divided into two groups (a) and (b) in a group of six, and are symmetrically distributed on the first positive electrode layer 3 (a) and the second positive electrode layer 3 (b) at the opposite corners, and the six lower bridge arm chips 2 are arranged in one-to-one correspondence with the six upper bridge arm chips 1, and the two groups of chips (a) and (b) are arranged in anti-parallel, so that the overall current of the two groups of chips flows in opposite directions.

[0056] Six lower bridge arm chips 2 and six upper bridge arm chips 1 form a six-phase bridge arm of the power module, and each bridge arm includes a lower bridge arm chip 2 and an upper bridge arm chip 1; six lower bridge arm chips 2 and six upper bridge arm chips 1 are similar. The specific connection method of each bridge arm can refer to the above description. The arrangement of the above six-phase bridge arms can make the commutation circuit form a strong coupling, and the two groups of six-phase bridge arms (a) and (b) form an anti-parallel structure to achieve mutual inductance cancellation in the plane and reduce parasitic inductance.

[0057] In this embodiment, the bottom AC electrode layer 7 is arranged at the bottom, and the first positive electrode layer 3(a), the second positive electrode layer 3(b), the first upper AC electrode layer 9(a), and the second upper AC electrode layer 9(b) are arranged on the bottom AC electrode layer 7 in the same layer to form a multi-layer ceramic substrate structure, and the first positive electrode layer 3(a) and the second positive electrode layer 3(b) are arranged diagonally, and the first upper AC electrode layer 9(a) and the second upper AC electrode layer 9(b) are arranged diagonally to form an anti-parallel structure. The above-mentioned six-phase bridge arm and the multi-layer ceramic substrate arrangement construct a three-dimensional commutation circuit, and the commutation circuit forms a strong coupling, which greatly reduces the parasitic inductance.

[0058] In the present embodiments (a) and (b), two groups of six-phase bridge arms are arranged in an anti-parallel layout, the first positive electrode layer 3 (a) is arranged diagonally with the second positive electrode layer 3 (b), the first upper AC electrode layer 9 (a) is arranged diagonally with the second upper AC electrode layer 9 (b), that is, the lower bridge arm chip 2 and the lower bridge arm chip 2 are arranged diagonally, forming an anti-parallel structure, which can make the power currents of two adjacent groups of bridge arms flow in opposite directions, realize the mutual inductance cancellation in the plane, and further reduce the parasitic inductance.

[0059] Of course, in other embodiments, the power module may be provided with only two groups of half-bridge arms, or more than three groups of half-bridge arms, which are connected in reverse parallel with each other, without any specific limitation.

[0060] The embodiments described above are only descriptions of the preferred embodiments of the present invention and are not intended to limit the scope of the present invention. Without departing from the design spirit of the present invention, various modifications and improvements made to the technical solutions of the present invention by ordinary technicians in this field should all fall within the protection scope determined by the claims of the present invention.

Claims

1. A new type of packaged power module, characterized in that: include: An upper component and a lower component, wherein a stacked structure is constructed by the upper component and the lower component to realize a three-dimensional commutation circuit; The upper component includes: a plurality of upper bridge arm chips, which are arranged on the first positive electrode layer and the second positive electrode layer, and a plurality of lower bridge arm chips, which are arranged on the first upper AC electrode layer and the second upper AC electrode layer; wherein the first positive electrode layer is arranged diagonally with the second positive electrode layer, the first upper AC electrode layer is arranged diagonally with the second upper AC electrode layer, the upper bridge arm chips on the first positive electrode layer and the lower bridge arm chips on the first upper AC electrode layer form a first group of bridge arms, and the upper bridge arm chips on the second positive electrode layer and the lower bridge arm chips on the second upper AC electrode layer form a second group of bridge arms, which are used to form an anti-parallel structure, and the power currents of two adjacent groups of bridge arms flow in opposite directions, so as to achieve mutual inductance cancellation in the plane; The lower layer component includes: a bottom AC electrode layer, and the bottom AC electrode layer is respectively connected to the upper bridge arm chip, the first upper AC electrode layer and the second upper AC electrode layer.

2. The novel packaged power module according to claim 1, characterized in that: The upper bridge arm chip is provided with a first control end, a first switch end and a second switch end. The first control end and the first switch end are both electrically connected to the driving board, and the second switch end is electrically connected to the first positive electrode layer and the second positive electrode layer respectively.

3. The novel packaged power module according to claim 2 is characterized in that: The lower bridge arm chip is provided with a second control terminal, a third switch terminal and a fourth switch terminal, the second control terminal and the third switch terminal are both electrically connected to the driving board, the third switch terminal is also electrically connected to the first negative electrode terminal and the second negative electrode terminal, and the first negative electrode terminal and the second negative electrode terminal are arranged diagonally, and the fourth switch terminal is electrically connected to the first upper AC electrode layer and the second upper AC electrode layer.

4. The novel packaged power module according to claim 1, characterized in that: The upper component also includes: a positive electrode terminal, which is arranged on the first positive electrode layer and the second positive electrode layer, a first positive electrode layer substrate, which is arranged on the first positive electrode layer substrate, a second positive electrode layer substrate, which is arranged on the second positive electrode layer substrate, a first upper AC electrode layer substrate, which is arranged on the first upper AC electrode layer substrate; and a second upper AC electrode layer substrate, which is arranged on the second upper AC electrode layer substrate.

5. The novel packaged power module according to claim 1, characterized in that: The lower component further includes: a bottom substrate, on which the bottom AC electrode layer is arranged.

6. The novel packaged power module according to claim 1, characterized in that: The upper bridge arm chip and the lower bridge arm chip are both: IGBT devices, triodes or MOS tubes.

7. The novel packaged power module according to claim 1, characterized in that: The bottom AC electrode layer includes: an upper copper layer, a lower copper layer and an intermediate ceramic layer, wherein the upper copper layer, the lower copper layer and the intermediate ceramic layer are connected in sequence.

8. The novel packaged power module according to claim 1, characterized in that: This module also includes: Thermistor, which is installed near the lower bridge arm chip or the upper bridge arm chip and connected to the driver board through bonding wires, is used to determine the temperature inside the power module.

9. The novel packaged power module according to claim 4, characterized in that: The module also includes: a first terminal member, serving as an AC electrode lead-out terminal, one end of the first terminal member being electrically connected to the lead-out end point of the bottom AC electrode layer, and the other end of the first terminal member extending to the outside of the bottom substrate; a second terminal member, serving as a positive electrode lead-out terminal, one end of the second terminal member being electrically connected to the lead-out end point of the positive electrode layer, and the other end of the second terminal member extending to above the positive electrode layer substrate; a third terminal member, serving as a negative electrode lead-out terminal, one end of the third terminal member being electrically connected to the third switch end, and the other end of the third terminal member extending to above the upper AC electrode layer substrate.

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