A sensor signal conversion device for a pre-alignment machine

Abstract

The present invention discloses a sensor signal conversion device for a pre-alignment machine. The device comprises: a signal output module, a signal conversion module and an analysis module; the signal output module is used to output the sensor signal of the pre-alignment machine to the signal conversion module; the signal conversion module is used to convert the sensor signal into a sensor conversion signal and output it to the analysis module; the analysis module is used to analyze the sensor conversion signal. This solution realizes high-speed conversion of sensor signals to improve the adaptability of the on-site analysis module and ensure the stable operation of the on-site analysis module.

Description

Technical Field

[0001] The embodiment of the present invention relates to a pre-alignment technology of a pre-alignment machine, and in particular to a sensor signal conversion device of the pre-alignment machine. Background Art

[0002] A wafer is a single-crystal structure. Different wafer crystal directions have different chemical, electrical and physical properties. The wafer has a notch or cut edge as a visible reference for the crystal direction. The semiconductor analysis module identifies the notch or cut edge of the wafer and transfers the wafer to the precision mobile platform at a specific angle for processing and measurement. With the development of semiconductor technology, equipment generally uses wafer pre-alignment machines to pre-align wafers before processing and measuring them to achieve high-speed automated production and measurement. The performance of the pre-alignment machine directly affects the transmission accuracy and production efficiency of semiconductor equipment.

[0003] At present, pre-alignment machines generally use sensors for wafer edge detection. By rotating the wafer, the wafer's occlusion signal changes to the sensor are detected, and the wafer's center coordinates and notch direction are calculated. At present, the internal principles of sensor manufacturers that measure the wafer's center coordinates and notch direction are diverse. Different types of sensors have certain differences in applicable scenarios, that is, different sensors detect different types of signals. Since the on-site semiconductor analysis module is fixed, the on-site analysis semiconductor module cannot perform wafer edge detection on different types of sensors, so the stable operation of the on-site semiconductor analysis module cannot be guaranteed. Therefore, it is necessary to study the sensor signal replacement solution of the pre-alignment machine to ensure the stable operation of the on-site semiconductor analysis module. Summary of the invention

[0004] The present invention provides a sensor signal conversion device of a pre-alignment machine, which realizes high-speed conversion of sensor signals, so as to improve the adaptability of an on-site semiconductor analysis module and ensure stable operation of the semiconductor analysis module.

[0005] To achieve the above objectives, an embodiment of the present invention provides a sensor signal conversion device for a pre-alignment machine, the device comprising: a signal output module, a signal conversion module and an analysis module;

[0006] The signal output module is used to output the sensor signal to the signal conversion module;

[0007] The signal conversion module is used to convert the sensor signal into a sensor conversion signal and output it to the analysis module;

[0008] The analysis module is used to analyze the sensor conversion signal.

[0009] Optionally, the signal output module includes a first type of signal output module; the signal conversion module includes a first conversion module; and the analysis module includes a first analysis module:

[0010] The first conversion module is used to convert the voltage signal output by the first type signal output module into a pixel light sensing signal and output it to the first analysis module so that the first analysis module performs analysis processing according to the pixel light sensing signal;

[0011] Alternatively, the signal output module includes a second type of signal output module; the signal conversion module includes a second conversion module; the analysis module includes a second analysis module;

[0012] The second conversion module is used to convert the pixel photosensitivity signal output by the second type signal output module into a voltage signal and output it to the second analysis module so that the second analysis module performs analysis processing according to the voltage signal.

[0013] Optionally, the first type of signal output module includes an analog voltage signal output unit; the first conversion module includes: a clock generation unit, a first logic control unit, a first shift counting unit, a first DA conversion unit and a first comparison unit;

[0014] The clock generating unit is used to generate a pixel light sensing signal storage clock and a pixel light sensing signal shift clock;

[0015] The first logic control unit is used to read and generate a counting clock and a clearing clock according to the pixel light sensing signal, the pixel light sensing signal storage clock and the pixel light sensing signal, the pixel light sensing signal shift clock; wherein the counting clock is synchronized with the pixel light sensing signal shift clock; the clearing clock is synchronized with the pixel light sensing signal storage clock;

[0016] The first shift counting unit is used to count and accumulate according to the counting clock, and output the accumulated count to the first DA conversion unit; and is also used to count and reset according to the reset clock;

[0017] The first DA conversion unit is used to convert the accumulated count into a sawtooth analog voltage signal;

[0018] The first comparison unit is used to output a pixel photosensitive signal according to the sawtooth analog voltage signal and the analog voltage signal output by the analog voltage signal output unit so that the first analysis module can analyze the pixel photosensitive signal; wherein the sawtooth analog voltage signal and the pixel photosensitive signal storage clock have the same period; the pixel photosensitive signal is synchronized with the pixel photosensitive signal shift clock.

[0019] Optionally, the first type of signal output module further includes a digital voltage signal output unit;

[0020] The first conversion module further includes: a second DA conversion unit;

[0021] The second DA conversion unit is used to convert the digital voltage signal output by the digital voltage signal output unit into an analog voltage signal; and is also used to output the analog voltage signal to the first comparison unit;

[0022] The first comparison unit is also used to output a pixel light-sensing signal according to the sawtooth analog voltage signal and the analog voltage signal output by the second DA conversion unit.

[0023] Optionally, the second conversion module includes: a second logic control unit, a threshold setting unit, a second comparison unit, a second shift counting unit and a trigger;

[0024] The second type of signal output module includes: a pixel light-sensing signal output unit;

[0025] The second logic control unit is used to generate a pixel light sensing signal storage clock and a pixel light sensing signal shift clock, and control the pixel light sensing signal output unit to generate a pixel light sensing signal according to the pixel light sensing signal storage clock and the pixel light sensing signal shift clock;

[0026] The threshold setting unit is used to generate a voltage threshold;

[0027] The second comparison unit is used to output a binary signal according to the pixel light sensing signal and the voltage threshold, and output the binary signal to the second logic control unit;

[0028] The second logic control unit is further configured to generate a count stop clock according to the pixel light sensing signal shift clock and the binary signal when the binary signal is detected;

[0029] The second shift counting unit is used for counting and accumulating according to the pixel light sensing signal shift clock, and when the counting stop clock is detected, the counting stops, and the count accumulation is output;

[0030] The second logic control unit is further used to generate a data output trigger clock according to the pixel light sensing signal storage clock; wherein the rising edge of the pixel light sensing signal storage clock is synchronized with the rising edge of the data output trigger clock;

[0031] It is also used to generate a clear clock according to the pixel light sensing signal storage clock and the data output trigger clock; wherein the rising edge of the clear clock is synchronized with the falling edge of the data output trigger clock; and the falling edge of the clear clock is synchronized with the falling edge of the pixel light sensing signal storage clock;

[0032] The trigger is used to output the count accumulation as a digital voltage signal to the second analysis module when receiving the data output trigger clock so that the second analysis module analyzes the digital voltage signal;

[0033] The second shift counting unit is further configured to clear the accumulated count to zero according to the clear clock.

[0034] Optionally, the second conversion module further includes: a third DA conversion unit;

[0035] The third DA conversion unit is used to convert the digital voltage signal into an analog voltage signal so that the second analysis module can analyze the analog voltage signal.

[0036] In the embodiment of the present invention, the sensor signal is output to the signal conversion module through the signal output module; the signal conversion module converts the sensor signal into a sensor conversion signal and outputs it to the analysis module; the analysis module analyzes the sensor conversion signal. In this way, the present solution realizes high-speed conversion of the sensor signal to improve the adaptability of the on-site analysis module and ensure the stable operation of the on-site analysis module. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 It is a structural schematic diagram of a sensor signal conversion device of a pre-alignment machine provided by an embodiment of the present invention;

[0038] Figure 2 It is a schematic diagram of the principle of measuring the edge of a wafer by outputting a voltage signal provided by an embodiment of the present invention;

[0039] Figure 3 It is a schematic diagram of the principle of measuring the wafer edge by outputting a pixel photosensitivity signal provided by an embodiment of the present invention;

[0040] Figure 4 It is a structural schematic diagram of another sensor signal conversion device of a pre-alignment machine provided by an embodiment of the present invention;

[0041] Figure 5 It is a structural schematic diagram of another sensor signal conversion device of a pre-alignment machine provided by an embodiment of the present invention;

[0042] Figure 6 is a specific structural diagram of a first conversion module provided in an embodiment of the present invention;

[0043] Figure 7 It is a waveform diagram of the pixel light-sensing signal storage clock Px, the pixel light-sensing signal shift clock Pt, the sawtooth analog voltage signal (0-Vref), the analog voltage signal V and the pixel light-sensing signal CCDsig provided by an embodiment of the present invention;

[0044] Figure 8 is another specific structural diagram of a first conversion module provided by an embodiment of the present invention;

[0045] Fig. 9 is a specific structural diagram of a second conversion module provided by an embodiment of the present invention;

[0046] Fig.10 It is a waveform diagram of the pixel light-sensing signal storage clock Px, the pixel light-sensing signal shift clock Pt, the pixel light-sensing signal CCDsig, the binarization signal Cmpsig, the counting stop clock CLK1, the data output trigger clock CLK2 and the clearing clock CLR2 provided in the embodiment of the present invention;

[0047] Fig.11 It is a schematic diagram of the specific structure of another second conversion module provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0048] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0049] Figure 1 is a schematic diagram of the structure of a sensor signal conversion device of a pre-alignment machine provided by an embodiment of the present invention, such as Figure 1 As shown, the device includes: a signal output module 10, a signal conversion module 20 and an analysis module 30; the signal output module 10 is used to output the sensor signal of the pre-alignment machine to the signal conversion module 20; the signal conversion module 20 is used to convert the sensor signal into a sensor conversion signal and output it to the analysis module 30; the analysis module 30 is used to analyze the sensor conversion signal.

[0050] At present, the pre-alignment machine can use different types of sensors to detect the edge of the wafer. By rotating the wafer, the change of the wafer's shielding signal to the sensor is detected, and the center coordinates and notch direction of the wafer are calculated. The on-site analysis module outputs an adjustment signal according to the offset between the calculated center coordinates and notch direction of the wafer and the preset center coordinates and notch direction of the wafer to adjust the wafer.

[0051] Different types of sensors may include silicon photocells, phototransistors and linear CCD sensors; this embodiment does not specifically limit different types of sensors; different types of sensors have different internal principles for detecting the edge of the wafer, and the output sensor signals are different; since the on-site analysis module can only analyze specific sensor signals, this embodiment converts the sensor signals output by different types of sensors through the signal conversion module 20, and outputs the sensor signals to the analysis module 30, so that the on-site analysis module can directly analyze the sensor conversion signal, so as to calculate the center coordinates of the wafer and the notch direction, thereby ensuring the stable operation of the on-site analysis module.

[0052] Of course, it is understandable that the actual on-site analysis module 30 can also be other types of analysis modules. The signal conversion module 20 can convert different sensor signals into other types of analysis modules, thereby satisfying the analysis of different types of analysis modules 30 on site. This embodiment does not specifically limit the type of on-site analysis module 30.

[0053] Considering that there are two main output interfaces of pre-alignment sensors at present, one is voltage signal output, Figure 2 FIG. 1 is a schematic diagram showing the principle of measuring the edge of a wafer by outputting a voltage signal according to an embodiment of the present invention. Figure 2 As shown, the edge detection of wafer B is performed using silicon photocell A or phototransistor. The principle is to convert the blocking distance L of wafer B into voltage for output (such as l1), that is, blocking distance / detection range = output voltage / reference voltage. This method has stable signal and simple calculation, but has large delay and average accuracy. The other method is pixel photosensitive signal output. Figure 3 FIG. 1 is a schematic diagram showing the principle of measuring the wafer edge by outputting a pixel light-sensing signal according to an embodiment of the present invention. Figure 3 As shown, the edge of wafer B is detected by array sensor C. The light excitation unit C1 in the array sensor C irradiates wafer B. Each photosensitive unit C2 corresponds to a register. During detection, the light sensitivity value of each photosensitive unit is stored in the corresponding register. By reading the register, the light sensitivity information (such as l2) of each photosensitive unit is obtained, and then the light sensitivity information is processed to obtain the edge position information. This method has a small signal delay and a high edge position recognition accuracy, but the processing circuit and algorithm are complex and easily interfered by the external environment.

[0054] At the same time, it is also considered that the types of current on-site analysis modules are also different, usually one is an analysis module for analyzing voltage signals, and the other is an analysis module for analyzing pixel photosensitive signals;

[0055] The following specifically describes the mutual conversion of the two sensor signals, which are respectively analyzed by different analysis modules after being converted to each other; optionally, in some embodiments, Figure 4 is a schematic diagram of the structure of another sensor signal conversion device of a pre-alignment machine provided by an embodiment of the present invention; Figure 4 As shown, the signal output module 10 includes a first type signal output module 11; the signal conversion module 20 includes a first conversion module 21; the analysis module 30 includes a first analysis module 31: the first conversion module 21 is used to convert the voltage signal output by the first type signal output module 11 into a pixel photosensitive signal and output it to the first analysis module 31 so that the first analysis module 31 performs analysis processing according to the pixel photosensitive signal;

[0056] Among them, the first type of signal output module 11 can use the wafer's blocking distance to convert it into a voltage in proportion for output, so that the edge position of the wafer can be determined; the first analysis module 31 is a module for analyzing pixel photosensitivity signals, that is, edge position information is determined based on the photosensitivity information of each photosensitive unit; the voltage signal can be converted into a pixel photosensitivity signal through the first conversion module 21, so that the first type of analysis module 31 can determine the edge position based on the pixel photosensitivity signal analysis.

[0057] Or, in other embodiments, Figure 5 is a schematic diagram of the structure of another sensor signal conversion device of a pre-alignment machine provided by an embodiment of the present invention; Figure 5 As shown, the signal output module 10 includes a second type signal output module 12; the signal conversion module 20 includes a second conversion module 22; the analysis module 30 includes a second analysis module 32; the second conversion module 22 is used to convert the pixel photosensitivity signal output by the second type signal output module 12 into a voltage signal and output it to the second analysis module 32 so that the second analysis module 32 performs analysis processing according to the voltage signal.

[0058] Among them, the second type of signal output module 12 can be a linear CCD sensor; the linear CCD sensor uses the photosensitive information pixel photosensitive signal of each photosensitive unit to obtain edge position information; the second type of analysis module 32 is a module for analyzing voltage signals, that is, determining edge position information based on voltage signals; the pixel photosensitive signal can be converted into a voltage signal through the second conversion module 22, so that the second type of analysis module can determine the edge position based on the voltage signal analysis.

[0059] Optionally, based on the above embodiment, the first conversion module 21 and the second conversion module 22 are further refined. Figure 6 is a specific structural diagram of a first conversion module provided in an embodiment of the present invention;

[0060] Figure 7: is a waveform diagram of the pixel light-sensing signal storage clock Px, the pixel light-sensing signal shift clock Pt, the sawtooth analog voltage signal (0-Vref), the analog voltage signal V and the pixel light-sensing signal CCDsig provided by an embodiment of the present invention; Figure 6-7 As shown, the first type signal output module 11 includes an analog voltage signal output unit 111; the first conversion module 21 includes: a clock generating unit 211, a first logic control unit 212, a first shift counting unit 213, a first DA conversion unit 214 and a first comparison unit 215;

[0061] A clock generating unit 211, used for generating a pixel light sensing signal storage clock Px and a pixel light sensing signal shift clock Pt;

[0062] The first logic control unit 212 is used to read and generate a counting clock CLK and a clearing clock CLR according to the pixel light sensing signal storage clock Px and the pixel light sensing signal shift clock Pt; wherein the counting clock CLK is synchronized with the pixel light sensing signal shift clock Pt; and the clearing clock CLR is synchronized with the pixel light sensing signal storage clock Px;

[0063] The first shift counting unit 213 is used for counting and accumulating according to the counting clock CLK, and outputting the accumulated count to the first DA conversion unit 214; and is also used for counting and clearing according to the clearing clock CLR;

[0064] A first DA conversion unit 214, used for converting the accumulated count into a sawtooth analog voltage signal (0-Vref);

[0065] The first comparison unit 215 is used to output the pixel photosensitive signal CCDsig according to the sawtooth analog voltage signal (0-Vref) and the analog voltage signal V output by the analog voltage signal output unit so that the first analysis module 31 analyzes the pixel photosensitive signal; wherein the sawtooth analog voltage signal (0-Vref) has the same period as the pixel photosensitive signal storage clock Px; the pixel photosensitive signal CCDsig is synchronized with the pixel photosensitive signal shift clock Pt.

[0066] The model of the first logic control unit 211 may be GAL22V10D; the model of the first shift counting unit 213 may be SN74LV4040A; the first DA conversion unit 214 may be composed of two chips: DAC902 and OPA2680; the model of the first comparison unit 215 may be TLV3201;

[0067] The following is a description of the conversion principle of analog voltage signals into pixel photosensitive signals in combination with specific clocks; for details, continue to refer to Figure 7The first comparison unit 215 outputs a square wave signal V' according to the sawtooth analog voltage signal (0-Vref) and the analog voltage signal V, and the period of the square wave signal V' is the same as the period of the pixel photosensitive signal storage clock Px; the position where the high and low levels of the square wave signal V' are flipped is the position of the pixel photosensitive signal shift clock Pt corresponding to the i-th photosensitive unit (the square wave signal V' and the pixel photosensitive signal are essentially the same type of signals); since the first analysis module 31 can directly analyze the position of the wafer edge through the position of the pixel photosensitive signal shift clock Pt corresponding to the i-th photosensitive unit, the position of the pixel photosensitive signal shift clock Pt corresponding to the i-th photosensitive unit can be determined by analyzing the position of the high and low levels of the square wave signal V', thereby analyzing the position of the wafer edge.

[0068] Optional, Figure 8 is another specific structural diagram of the first conversion module provided by an embodiment of the present invention; Figure 8 As shown, the first type of signal output module 11 further includes a digital voltage signal output unit 112;

[0069] The first conversion module 21 also includes: a second DA conversion unit 216; the second DA conversion unit 216 is used to convert the digital voltage signal output by the digital voltage signal output unit 112 into an analog voltage signal; and is also used to output the analog voltage signal to the first comparison unit 215; the first comparison unit 215 is also used to output a pixel light-sensing signal according to the sawtooth analog voltage signal and the analog voltage signal output by the second DA conversion unit 216. When the digital voltage signal output unit 112 outputs a digital voltage signal, adding the second DA conversion unit 216 can convert the digital voltage signal into an analog voltage signal; the first comparison unit 215 outputs a pixel light-sensing signal according to the sawtooth analog voltage signal and the analog voltage signal, thereby meeting the conversion requirements of other scenarios.

[0070] Optional, Fig. 9 is a specific structural diagram of a second conversion module provided by an embodiment of the present invention; Fig.10 : is a waveform diagram of the pixel light-sensing signal storage clock Px, the pixel light-sensing signal shift clock Pt, the pixel light-sensing signal CCDsig, the binarization signal Cmpsig, the counting stop clock CLK1, the data output trigger clock CLK2 and the clearing clock CLR2 provided in an embodiment of the present invention; Figure 9-10 As shown, the second conversion module 22 includes: a second logic control unit 221, a threshold setting unit 222, a second comparison unit 223, a second shift counting unit 224 and a trigger 225;

[0071] The second type of signal output module 12 includes: a pixel light sensing signal output unit 121;

[0072] The second logic control unit 221 is used to generate a pixel light sensing signal storage clock Px and a pixel light sensing signal shift clock Pt, and control the pixel light sensing signal output unit 121 to generate a pixel light sensing signal CCDsig according to the pixel light sensing signal storage clock Px and the pixel light sensing signal shift clock Pt;

[0073] The threshold setting unit 222 is used to generate a voltage threshold V 阈 ;

[0074] The second comparison unit 223 is used to compare the pixel light sensing signal CCDsig and the voltage threshold V 阈 Outputting a binary signal Cmpsig, and outputting the binary signal Cmpsig to the second logic control unit 221;

[0075] The second logic control unit 221 is further used to generate a count stop clock CLK1 according to the pixel light sensing signal shift clock Pt and the binary signal Cmpsig when the binary signal Cmpsig is detected;

[0076] The second shift counting unit 224 is used to count and accumulate according to the pixel light sensing signal shift clock Pt, and when the count stop clock CLK1 is detected to stop counting, the count accumulation is output;

[0077] The second logic control unit 221 is further used to generate a data output trigger clock CLK2 according to the pixel light sensing signal storage clock Px; wherein the rising edge of the pixel light sensing signal storage clock Px is synchronized with the rising edge of the data output trigger clock CLK2;

[0078] It is also used to generate a clear clock CLR2 according to the pixel light-sensing signal storage clock Px and the data output trigger clock CLK2; wherein the rising edge of the clear clock CLR2 is synchronized with the falling edge of the data output trigger clock CLK2; and the falling edge of the clear clock CLR2 is synchronized with the falling edge of the pixel light-sensing signal storage clock Px;

[0079] The trigger 225 is used to output the count accumulation as the digital voltage signal Q to the second analysis module 32 when receiving the data output trigger clock CLK2 so that the second analysis module 32 analyzes the digital voltage signal Q;

[0080] The second shift counting unit 224 is further used to clear the count accumulation to zero according to the clear clock CLR2.

[0081] The model of the second logic control unit 221 may be GAL22V10D; the model of the second comparison unit 223 may be TLV3201; the model of the second shift counting unit 224 may be SN74LV4040A; the model of the trigger 225 may be sn74hc374;

[0082] The following is a description of the conversion principle of pixel light-sensing signals into analog voltage signals in combination with specific clocks; continue to refer to Fig.10 Specifically, since the moment when the pixel light-sensing signal CCDsig is flipped is the edge position of the wafer, the position of the wafer edge is analyzed by the position of the i-th light-sensing unit corresponding to the pixel light-sensing signal shift clock Pt; in this embodiment, the second comparison unit 223 compares the pixel light-sensing signal CCDsig and the voltage threshold V 阈 Output a binary signal Cmpsig, the position where the level of the binary signal Cmpsig flips corresponds to the moment when the level of the pixel photosensitive signal CCDsig flips, that is, the position of the pixel photosensitive signal shift clock Pt corresponding to the i-th photosensitive unit, that is, the detection moment of the wafer edge position can be determined by the moment when the level of the binary signal Cmpsig flips;

[0083] When the binary signal Cmpsig is detected, the second logic control unit 221 generates a count stop clock CLK1 according to the pixel light sensing signal shift clock Pt and the binary signal Cmpsig; the second shift counting unit 224 counts and accumulates according to the pixel light sensing signal shift clock Pt, and stops counting when the count stop clock CLK1 is detected, and outputs the count accumulation;

[0084] The second logic control unit 221 simultaneously generates a data output trigger clock CLK2 based on the pixel photosensitivity signal storage clock Px; when the trigger 225 receives the data output trigger clock CLK2, it outputs the count accumulation as a digital voltage signal Q to the second analysis module 32 so that the second analysis module 32 analyzes the digital voltage signal Q, thereby determining the edge position of the wafer.

[0085] When the data output trigger clock CLK2 ends, the second logic control unit 221 generates a clear clock CLR2; the second shift counting unit 224 clears the count accumulation according to the clear clock CLR2 to prepare for the next cycle counting.

[0086] Optional, Fig.11 is a schematic diagram of a specific structure of another second conversion module provided by an embodiment of the present invention; Fig.11 As shown, the second conversion module 22 further includes: a third DA conversion unit 226; the third DA conversion unit 226 is used to convert the digital voltage signal (Dn) into an analog voltage signal (exemplarily, Dn / 1024*Vmax) so that the second analysis module 32 can analyze the analog voltage signal. The addition of the third DA conversion unit 226 can meet the conversion requirements of the second analysis module 32 to analyze the output analog voltage signal.

[0087] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A sensor signal conversion device for a pre-alignment machine, characterized in that: include: Signal output module, signal conversion module and analysis module; The signal output module is used to output the sensor signal to the signal conversion module; The signal conversion module is used to convert the sensor signal into a sensor conversion signal and output it to the analysis module; The analysis module is used to analyze the sensor conversion signal; Wherein, the signal output module includes a first type of signal output module; the signal conversion module includes a first conversion module; the analysis module includes a first analysis module: The first conversion module is used to convert the voltage signal output by the first type signal output module into a pixel light sensing signal and output it to the first analysis module so that the first analysis module performs analysis processing according to the pixel light sensing signal; Wherein, the first type of signal output module includes an analog voltage signal output unit; the first conversion module includes: a clock generation unit, a first logic control unit, a first shift counting unit, a first DA conversion unit and a first comparison unit; The clock generating unit is used to generate a pixel light sensing signal storage clock and a pixel light sensing signal shift clock; The first logic control unit is used to read and generate a counting clock and a clearing clock according to a pixel light sensing signal saving clock of the pixel light sensing signal and a pixel light sensing signal shifting clock of the pixel light sensing signal; wherein the counting clock is synchronized with the pixel light sensing signal shifting clock; and the clearing clock is synchronized with the pixel light sensing signal saving clock; The first shift counting unit is used to count and accumulate according to the counting clock, and output the accumulated count to the first DA conversion unit; and is also used to count and reset according to the reset clock; The first DA conversion unit is used to convert the accumulated count into a sawtooth analog voltage signal; The first comparison unit is used to output a pixel photosensitive signal according to the sawtooth analog voltage signal and the analog voltage signal output by the analog voltage signal output unit so that the first analysis module can analyze the pixel photosensitive signal; wherein the sawtooth analog voltage signal and the pixel photosensitive signal storage clock have the same period; the pixel photosensitive signal is synchronized with the pixel photosensitive signal shift clock.

2. The sensor signal conversion device of the pre-alignment machine according to claim 1, characterized in that: The first type of signal output module also includes a digital voltage signal output unit; The first conversion module further includes: a second DA conversion unit; The second DA conversion unit is used to convert the digital voltage signal output by the digital voltage signal output unit into an analog voltage signal; and is also used to output the analog voltage signal to the first comparison unit; The first comparison unit is also used to output a pixel light-sensing signal according to the sawtooth analog voltage signal and the analog voltage signal output by the second DA conversion unit.

3. The sensor signal conversion device of the pre-alignment machine according to claim 1, characterized in that: Alternatively, the signal output module includes a second type of signal output module; the signal conversion module includes a second conversion module; the analysis module includes a second analysis module; The second conversion module is used to convert the pixel light-sensing signal output by the second type signal output module into a voltage signal and output it to the second analysis module so that the second analysis module performs analysis processing according to the voltage signal; The second conversion module includes: a second logic control unit, a threshold setting unit, a second comparison unit, a second shift counting unit and a trigger; The second type of signal output module includes: a pixel light-sensing signal output unit; The second logic control unit is used to generate a pixel light sensing signal storage clock and a pixel light sensing signal shift clock, and control the pixel light sensing signal output unit to generate a pixel light sensing signal according to the pixel light sensing signal storage clock and the pixel light sensing signal shift clock; The threshold setting unit is used to generate a voltage threshold; The second comparison unit is used to output a binary signal according to the pixel light sensing signal and the voltage threshold, and output the binary signal to the second logic control unit; The second logic control unit is further configured to generate a count stop clock according to the pixel light sensing signal shift clock and the binary signal when the binary signal is detected; The second shift counting unit is used for counting and accumulating according to the pixel light sensing signal shift clock, and when the counting stop clock is detected, the counting stops, and the count accumulation is output; The second logic control unit is further used to generate a data output trigger clock according to the pixel light sensing signal storage clock; wherein the rising edge of the pixel light sensing signal storage clock is synchronized with the rising edge of the data output trigger clock; It is also used to generate a clear clock according to the pixel light sensing signal storage clock and the data output trigger clock; wherein the rising edge of the clear clock is synchronized with the falling edge of the data output trigger clock; the falling edge of the clear clock is synchronized with the falling edge of the pixel light sensing signal storage clock; The trigger is used to output the count accumulation as a digital voltage signal to the second analysis module when receiving the data output trigger clock so that the second analysis module analyzes the digital voltage signal; The second shift counting unit is further configured to clear the accumulated count to zero according to the clear clock.

4. The sensor signal conversion device of the pre-alignment machine according to claim 3, characterized in that: The second conversion module further includes: a third DA conversion unit; The third DA conversion unit is used to convert the digital voltage signal into an analog voltage signal so that the second analysis module can analyze the analog voltage signal.

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