A CIGS light-absorbing layer preparation device and method, and a CIGS solar cell

Abstract

The present application relates to the technical field of solar cells, and provides a CIGS light absorption layer preparation device and method and a CIGS solar cell.The CIGS light absorption layer preparation device comprises a sample inlet chamber, a first sputtering chamber, a second sputtering chamber, a first transition chamber, a first high-temperature chamber, a second high-temperature chamber and a sample outlet chamber.Compared with a conventional CIGS light absorption layer preparation device, the device is provided with the first high-temperature chamber to perform selenization and sulfuration on CIG precursors forming a selenium film, so as to obtain selenized and sulfured CIGS light absorption layers, thereby effectively improving the photoelectric conversion efficiency of the solar cell and maintaining good stability in a high-temperature and high-humidity environment.The CIGS light absorption layer preparation device has the advantages of high production efficiency, high stability and high thin film preparation uniformity.

Description

Technical Field

[0001] This invention relates to the field of solar cell technology, and in particular to a CIGS light-absorbing layer preparation apparatus and method, and a CIGS solar cell. Background Technology

[0002] Copper indium gallium selenide (CIGS) is a direct bandgap semiconductor material with advantages such as high efficiency, high absorption coefficient, high reliability, and tunable bandgap. With a film thickness of 2-3 μm, it can almost completely absorb incident sunlight. The basic structure of a CIGS thin-film solar cell includes a substrate, back electrode, light-absorbing layer, buffer layer, window layer, and metal electrode layer stacked sequentially. The fabrication process of CIGS thin-film solar cells is simple, making large-scale production possible. This film can be uniformly deposited onto low-cost glass or even flexible substrates for normal use, making it one of the most promising low-cost, high-efficiency solar cells.

[0003] However, the current photoelectric conversion efficiency of CIGS solar cells is not high enough and needs to be further improved. Summary of the Invention

[0004] Therefore, it is necessary to address the shortcomings of the current low photoelectric conversion efficiency of CIGS solar cells by providing a CIGS light absorption layer preparation device and method, as well as a CIGS solar cell.

[0005] To solve the above problems, this application adopts the following technical solution:

[0006] One objective of this application is to provide a CIGS light absorption layer preparation apparatus, comprising:

[0007] The sample inlet chamber is used to guide the substrate into the sputtering chamber;

[0008] The sputtering chamber includes a first sputtering chamber, a second sputtering chamber, a first transition chamber, a first high-temperature chamber, and a second high-temperature chamber connected in sequence.

[0009] And the sample output room;

[0010] The first sputtering chamber is used to fabricate a metal back electrode on the substrate;

[0011] The second sputtering chamber is used to prepare CIG precursors on a metal back electrode;

[0012] The first transition chamber is used to evaporate the selenium source and form a selenium film on the CIG precursor;

[0013] The first high-temperature chamber is used to selenize and sulfide the CIG precursor that forms the selenium film to obtain the CIGS light-absorbing layer.

[0014] The second high-temperature chamber is used to anneal the CIGS light-absorbing layer;

[0015] The sample outlet chamber is used to export the substrate containing the CIGS light-absorbing layer.

[0016] In some embodiments, a second transition chamber is also included, which is located between the sample injection chamber and the first sputtering chamber;

[0017] The second transition chamber is used to preheat the substrate.

[0018] In some embodiments, a third transition chamber is also included, which is located between the second high-temperature chamber and the sample outlet chamber;

[0019] The third transition chamber is used to cool the CIGS light absorption layer.

[0020] In some embodiments, the metal back electrode is a molybdenum electrode.

[0021] In some embodiments, the first transition chamber is equipped with a crystal oscillator that monitors the thickness of the vapor-deposited selenium film to prevent over-selenization of the CIG precursor.

[0022] The second objective of this application is to provide a method for preparing a CIGS light-absorbing layer, comprising the following steps:

[0023] Provide the aforementioned CIGS light absorption layer preparation apparatus;

[0024] The substrate is introduced into the first sputtering chamber through the sample introduction chamber;

[0025] A metal back electrode is fabricated on a substrate within the first sputtering chamber;

[0026] CIG precursors are prepared on a metal back electrode in a second sputtering chamber;

[0027] The selenium source is evaporated in the first transition chamber and a selenium film is formed on the CIG precursor.

[0028] In the first high-temperature chamber, the CIG precursor for forming a selenium film is selenized and sulfurized to obtain a CIGS light-absorbing layer.

[0029] The CIGS light-absorbing layer was annealed in the second high-temperature chamber;

[0030] The substrate containing the CIGS light-absorbing layer is extracted from the sample outlet chamber.

[0031] In some embodiments, a mixed gas containing H2S is introduced into a first high-temperature chamber to selenize and sulfide the CIG precursor that forms the selenium film, thereby obtaining a CIGS light-absorbing layer.

[0032] In some embodiments, during the annealing of the CIGS light-absorbing layer in the second high-temperature chamber, a mixed gas containing H2S is introduced into the second high-temperature chamber.

[0033] In some embodiments, the temperature is controlled to be 110-130°C in the step of selenizing and sulfurizing the CIG precursor that forms the selenium film in the first high-temperature chamber.

[0034] In the step of annealing the CIGS light-absorbing layer in the second high-temperature chamber, the annealing temperature is 550–590°C.

[0035] The third objective of this application is to provide a CIGS solar cell, comprising a CIGS light-absorbing layer, a buffer layer, a window layer, and a grid electrode sequentially stacked on the CIGS light-absorbing layer;

[0036] The CIGS light-absorbing layer is prepared using the aforementioned preparation method.

[0037] The application adopts the above technical solution, and its beneficial effects are as follows:

[0038] The CIGS light-absorbing layer preparation apparatus provided in this application includes: a sample introduction chamber, a first sputtering chamber, a second sputtering chamber, a first transition chamber, a first high-temperature chamber, a second high-temperature chamber, and a sample exit chamber. The first high-temperature chamber is used to selenize and sulfide the CIG precursor for forming a selenium film to obtain a CIGS light-absorbing layer. Compared with conventional CIGS light-absorbing layer preparation apparatuses, this apparatus, by using a first high-temperature chamber to selenize and sulfide the CIG precursor for forming a selenium film, obtains a selenized and sulfide-treated CIGS light-absorbing layer, thereby effectively improving the photoelectric conversion efficiency of solar cells and maintaining good stability under high temperature and humidity conditions. The CIGS light-absorbing layer preparation apparatus of this invention has advantages such as high production efficiency, high stability, and high uniformity of the prepared thin film. Attached Figure Description

[0039] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments of this application or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0040] Figure 1 This is a schematic diagram of the CIGS light absorption layer preparation apparatus of the present invention;

[0041] Figure 2 This is a schematic diagram of the preparation process of the CIGS light absorption layer of the present invention;

[0042] Figure 3This is a schematic diagram of the structure of the CIGS solar cell of the present invention. Detailed Implementation

[0043] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application.

[0044] In the description of this application, it should be understood that the terms "upper", "lower", "horizontal", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0045] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0046] To make the objectives, technical solutions, and advantages of this application clearer, this application will be further described in detail with reference to the accompanying drawings and embodiments.

[0047] This invention provides a CIGS light absorption layer preparation apparatus, such as... Figure 1 As shown, it includes:

[0048] Sample introduction chamber 10 is used to introduce the substrate into the sputtering chamber;

[0049] The sputtering chamber includes a first sputtering chamber 12, a second sputtering chamber 13, a first transition chamber 14, a first high-temperature chamber 15, and a second high-temperature chamber 16 connected in sequence.

[0050] And sample output room 18;

[0051] The first sputtering chamber 12 is used to fabricate a metal back electrode on the substrate;

[0052] The second sputtering chamber 13 is used to prepare CIG precursors on a metal back electrode;

[0053] The first transition chamber 14 is used to evaporate the selenium source and form a selenium film on the CIG precursor;

[0054] The first high-temperature chamber 15 is used to selenize and sulfide the CIG precursor that forms the selenium film to obtain the CIGS light absorption layer.

[0055] The second high-temperature chamber 16 is used for annealing the CIGS light-absorbing layer;

[0056] Sample outlet chamber 18 is used to export the substrate containing the CIGS light-absorbing layer.

[0057] The CIGS light-absorbing layer preparation apparatus of the present invention includes: a sample inlet chamber 10, a first sputtering chamber 12, a second sputtering chamber 13, a first transition chamber 14, a first high-temperature chamber 15, a second high-temperature chamber 16, and a sample outlet chamber 18. The first high-temperature chamber 15 is used to selenize and sulfide the CIG precursor for forming a selenium film to obtain a CIGS light-absorbing layer. Compared with conventional CIGS light-absorbing layer preparation apparatuses, this apparatus, by setting the first high-temperature chamber 15 to selenize and sulfide the CIG precursor for forming a selenium film, obtains a selenized and sulfide-treated CIGS light-absorbing layer, thereby effectively improving the photoelectric conversion efficiency of solar cells and maintaining good stability under high temperature and humidity environments. The CIGS light-absorbing layer preparation apparatus of the present invention has advantages such as high production efficiency, high stability, and high uniformity of the prepared thin film.

[0058] Specifically, sulfurization can improve the interface performance between the absorber layer and other layers of CIGS solar cells. By introducing sulfur into the CIGS surface, its surface electronic structure can be adjusted, the surface defect density can be reduced, and the electron transport and charge collection efficiency can be improved, thereby increasing the photoelectric conversion efficiency.

[0059] The CIGS light-absorbing layer preparation device of the present invention has many advantages, such as the ability to prepare CIGS light-absorbing layers in large batches and quickly, high uniformity of large-area selenium source evaporation, continuous sample transmission to improve production efficiency, and simultaneous selenization and sulfidation to save preparation time. It is expected to solve the current situation of my country's over-reliance on foreign imports in the field of high-end production and manufacturing equipment for CIGS light-absorbing layers, and has significant application prospects in the fields of building-integrated photovoltaics, distributed power stations, and photovoltaic building materials components.

[0060] In some embodiments, a second transition chamber 11 is also included, which is located between the sample injection chamber 10 and the first sputtering chamber 12;

[0061] The second transition chamber 11 is used to preheat the substrate.

[0062] In some embodiments, a third transition chamber 17 is also included, which is located between the second high-temperature chamber 16 and the sample outlet chamber 18;

[0063] The third transition chamber 17 is used to cool the CIGS light absorption layer.

[0064] In some embodiments, the sample inlet chamber 10 is used for substrate sample introduction and vacuum transition. The sample inlet chamber 10 includes a cavity, valves, heating devices, a mechanical pump, a Roots pump, a control power supply, and a vacuum gauge. The sample inlet chamber is designed to be airtight to reduce the possibility of external air and impurities entering the vacuum system, ensuring uniform and consistent results in thin film deposition or other processing steps. The design of the sample inlet chamber helps maintain a vacuum environment to ensure that subsequent steps are performed stably under vacuum conditions. The sample inlet chamber includes substrate clamping or positioning devices to ensure that the substrate maintains a stable position during processing. The sample inlet chamber is also used for substrate pretreatment steps, such as cleaning and preheating.

[0065] In some embodiments, the second transition chamber 11 is used for vacuum buffering and preheating, including a cavity, heating, power supply, mechanical pump, Roots pump, molecular pump, heating device and vacuum gauge; in the second transition chamber 11, the vacuum transition between chambers and the preheating of the substrate can be guaranteed.

[0066] In some embodiments, the first sputtering chamber 12 is used to prepare a metal back electrode (such as a Mo electrode) by magnetron sputtering. The first sputtering chamber 12 includes a cavity, valves, a power supply, a mechanical pump, a Roots pump, a molecular pump, a Mo target, a heating device, and a vacuum gauge. The target material of the first sputtering chamber 12 is a molybdenum target. A high vacuum is maintained by a three-stage vacuum pump consisting of a mechanical pump, a Roots pump, and a molecular pump to ensure that the target material is deposited on the substrate in a pure form.

[0067] In some embodiments, the second sputtering chamber 13 is used to prepare a CIG precursor (CuGa / In precursor); the second sputtering chamber 13 includes a cavity, valves, a power supply, a CuGa / In target, a mechanical pump, a Roots pump, a molecular pump heating device, and a vacuum gauge; the target material of the second sputtering chamber 13 is a CuGa / In target, and absorption layers with different band gaps can be obtained by using target materials with different element ratios.

[0068] In some embodiments, the first transition chamber 14 is used to evaporate the selenium source and form a selenium film on the CIG precursor. The first transition chamber 14 includes a cavity, a selenium source, a crystal oscillator, a power supply, a mechanical pump, a Roots pump, a molecular pump, a heating device, and a vacuum gauge. In the transition chamber, the thickness of the evaporated selenium film is monitored using the crystal oscillator to prevent over-selenization from harming the prepared absorber layer.

[0069] In some embodiments, the first high-temperature chamber 15 is used to selenize and sulfide the CIG precursor that forms the selenium film; the first high-temperature chamber 15 includes a cavity, valves, power supply, gas pipeline, mechanical pump, Roots pump, molecular pump, heating device and vacuum gauge; the gas path design of the first high-temperature chamber 15 includes H2S and N2, that is, H2S and N2 are introduced into the first high-temperature chamber 15 to selenize and sulfide the CIG precursor that forms the selenium film to obtain the CIGS light absorption layer.

[0070] In some embodiments, the second high-temperature chamber 16 is used to anneal the CIGS light-absorbing layer; the second high-temperature chamber 16 includes a cavity, valves, power supply, gas pipeline, mechanical pump, Roots pump, molecular pump, heating device and vacuum gauge; the gas path design of the second high-temperature chamber 16 includes H2S and N2, that is, H2S and N2 are introduced into the first high-temperature chamber 15 to anneal the CIGS light-absorbing layer.

[0071] In some embodiments, the third transition chamber 17 is used to cool the CIGS light-absorbing layer and to perform vacuum transition; the third transition chamber 17 includes a cavity, a power supply, a mechanical pump, a Roots pump, a molecular pump and a vacuum gauge, and realizes vacuum buffering between cavities and cooling of the substrate in the third transition chamber 17.

[0072] In some embodiments, the sample outlet chamber 18 is used to export the substrate containing the CIGS light absorption layer. The sample outlet chamber 18 includes a cavity, a valve, a mechanical pump, and a Roots pump. During the substrate export process, the sample outlet chamber plays a role in protecting the substrate and preventing the substrate from being contaminated or damaged by the external environment during movement or transportation.

[0073] In some embodiments, the power supply in the first sputtering chamber 12 and the second sputtering chamber 13 is a pulsed DC sputtering power supply.

[0074] In some embodiments, the CIGS light absorption layer preparation apparatus of the present invention is equipped with a circulating cooling water device for cooling, and the circulating water is always on.

[0075] In some embodiments, the maximum processing substrate size of the CIGS light absorption layer fabrication apparatus of the present invention is 60cm × 40cm (60cm long and 40cm wide).

[0076] In some embodiments, the metal back electrode is a molybdenum electrode.

[0077] In some embodiments, a crystal oscillator is provided in the first transition chamber 14 to monitor the thickness of the vapor-deposited selenium film to prevent over-selenization of the CIG precursor.

[0078] Based on the same inventive concept, the present invention also provides a method for preparing a CIGS light-absorbing layer, comprising the following steps:

[0079] S1. Provide the above-mentioned CIGS light absorption layer preparation apparatus;

[0080] S2. The substrate is introduced into the first sputtering chamber through the sample introduction chamber;

[0081] S3. Fabricate a metal back electrode on the substrate in the first sputtering chamber;

[0082] S4. Prepare a CIG precursor on a metal back electrode in the second sputtering chamber;

[0083] S5. The selenium source is evaporated in the first transition chamber and a selenium film is formed on the CIG precursor.

[0084] S6. In the first high-temperature chamber, the CIG precursor that forms the selenium film is selenized and sulfurized to obtain the CIGS light absorption layer.

[0085] S7. Anneal the CIGS light-absorbing layer in the second high-temperature chamber;

[0086] S8. The substrate containing the CIGS light absorption layer is removed from the sample outlet chamber.

[0087] For details, please refer to Figure 2 As shown, after being introduced into the sample chamber, the substrate enters the second transition chamber for preheating. The preheated substrate then enters the first sputtering chamber, which contains a Mo target. The Mo target is sputtered, depositing a metallic Mo back electrode on the substrate. Next, it enters the second sputtering chamber, which contains a CuGa / In target. The CuGa / In target is sputtered, depositing a CIG precursor on the metallic Mo back electrode. Then, it enters the first transition chamber, which contains a selenium source. The selenium source is evaporated, forming a selenium film on the CIG precursor. Next, it enters the first high-temperature chamber, where a mixture of H2S and N2 is introduced to selenize and sulfide the CIG precursor forming the selenium film, obtaining a CIGS light-absorbing layer. Next, it enters the second high-temperature chamber, where a mixture of H2S and N2 is introduced, annealing the CIGS light-absorbing layer. Finally, it enters the third transition chamber to cool the CIGS light-absorbing layer. Finally, it exits through the sample exit chamber, yielding a substrate with the deposited CIGS light-absorbing layer.

[0088] In some embodiments, a mixed gas containing H2S is introduced into a first high-temperature chamber to selenize and sulfide the CIG precursor that forms the selenium film, thereby obtaining a CIGS light-absorbing layer.

[0089] In some embodiments, during the annealing of the CIGS light-absorbing layer in the second high-temperature chamber, a mixed gas containing H2S is introduced into the second high-temperature chamber.

[0090] Specifically, the mixed gas containing H2S is a mixed gas including H2S and N2.

[0091] In some embodiments, the temperature is controlled at 110–130°C during the selenization and sulfidation steps of the CIG precursor forming the selenium film in the first high-temperature chamber.

[0092] In some embodiments, during the step of annealing the CIGS light-absorbing layer in the second high-temperature chamber, the annealing temperature is 550–590°C.

[0093] In the above embodiments, the selenization and sulfidation are divided into two processes. The first process is to carry out selenization and sulfidation at a low temperature of 110-130°C in a first high-temperature chamber. The second process is to carry out selenization and sulfidation and annealing at a high temperature of 550-590°C.

[0094] Based on the same inventive concept, the present invention also provides a CIGS solar cell, comprising a CIGS light-absorbing layer, a buffer layer, a window layer and a grid electrode sequentially stacked on the CIGS light-absorbing layer;

[0095] The CIGS light-absorbing layer was prepared using the method described above.

[0096] For details, please refer to Figure 3 As shown, the CIGS solar cell of the present invention includes a substrate 1, a metal back electrode 2, a CIGS light absorption layer 3, a buffer layer 4, a window layer 5, and a grid electrode 6, which are stacked sequentially on the substrate 1.

[0097] In some embodiments, the buffer layer includes at least one of cadmium sulfide buffer layer, zinc sulfide buffer layer, zinc selenide buffer layer, and zinc sulfoselenide buffer layer.

[0098] In some embodiments, the window layer includes at least one of a zinc oxide-doped aluminum window layer, a zinc oxide-doped gallium window layer, a zinc oxide-doped indium window layer, and a zinc oxide-doped boron window layer.

[0099] In some embodiments, the metal back electrode is a molybdenum electrode, and the Mo back electrode includes a bilayer Mo film, which includes a loose layer Mo film and a dense layer Mo film, with the loose layer Mo film in contact with the substrate.

[0100] The thickness of the porous Mo film is 200–400 nm;

[0101] The thickness of the dense Mo film is 800–1200 nm.

[0102] In some embodiments, a molybdenum electrode is deposited on a substrate using DC magnetron sputtering. Specifically, a loose Mo film is deposited at a working pressure of 1.0 Pa and a sputtering power of 340–360 W; then a dense Mo film is deposited at a working pressure of 0.3 Pa and a sputtering power of 750–850 W.

[0103] In some embodiments, the buffer layer is a cadmium sulfide buffer layer with a thickness of 50-80 nm; specifically, the cadmium sulfide buffer layer is prepared by a chemical water bath method, and the water bath heating time is 9-10 min.

[0104] In some embodiments, the buffer layer is a cadmium sulfide buffer layer, and the method for preparing the cadmium sulfide buffer layer includes the following steps:

[0105] Add 0.148g of cadmium sulfate (CdSO4) to 60mL of water to obtain a cadmium sulfate (CdSO4) solution;

[0106] 5.694 g of thiourea (CH4N2S) was added to 150 mL of water to obtain a thiourea (CH4N2S) solution. The substrate surface with the CIGS light-absorbing layer was rinsed with deionized water and then placed in a reaction vessel. 450 mL of water, 45 mL of concentrated ammonia (mass fraction 28-30%), and cadmium sulfate (CdSO4) solution were mixed and poured into the reaction vessel, followed by the thiourea (CH4N2S) solution. The reaction vessel was quickly placed in a water bath, and the temperature of the water bath was maintained at about 68°C throughout the preparation process for 9-10 min. A CdS film was grown on the CIGS light-absorbing layer. After growth, the sample was removed and rinsed, then dried with high-purity nitrogen gas. Finally, the sample was annealed in an oven at 160°C for 2 min, thus obtaining a CdS buffer layer.

[0107] In some embodiments, the window layer includes an i-ZnO layer and an AZO layer, with a thickness of 400–500 nm; specifically, the i-ZnO layer has a thickness of 50–100 nm, and the AZO layer has a thickness of 100–300 nm. The i-ZnO layer is in contact with the buffer layer.

[0108] In some embodiments, the window layer includes an i-ZnO layer and an AZO layer. Specifically, the i-ZnO layer and the AZO layer are prepared by radio frequency magnetron sputtering; the i-ZnO layer is prepared using an intrinsic ZnO target (purity of 99.99%); and the AZO layer is prepared using a ZnO:Al2O3 target (doped with 2wt% Al2O3).

[0109] In some embodiments, the gate electrode is a Ni-Al-Ni metal gate electrode; the Ni-Al-Ni metal gate electrode includes a first Ni electrode, an Al electrode deposited on the first Ni electrode, and a second Ni electrode covering the Al electrode, wherein the first Ni electrode is in contact with the window layer (specifically, in contact with the AZO layer); the thickness of the first Ni electrode is... The thickness of the Al electrode is The thickness of the second Ni electrode is

[0110]

[0111] The technical solutions described above in this application will be explained in detail below with reference to specific embodiments.

[0112] Example 1

[0113] This embodiment provides a method for preparing a CIGS light-absorbing layer, including the following steps:

[0114] S1, Provide attachments Figure 1 The CIGS light absorption layer preparation device described above;

[0115] S2. The soda-lime glass substrate is introduced into the first sputtering chamber through the sample introduction chamber;

[0116] S3. In the first sputtering chamber, a metal back electrode is prepared on the substrate. The metal back electrode is a molybdenum electrode. The Mo back electrode includes a double-layer Mo film, which includes a loose layer Mo film and a dense layer Mo film. The loose layer Mo film is in contact with the substrate. The thickness of the loose layer Mo film is 250 nm. The thickness of the dense layer Mo film is 800 nm.

[0117] Molybdenum electrodes were deposited on a substrate using DC magnetron sputtering. Specifically, a loose Mo film was deposited at a working pressure of 1.0 Pa and a sputtering power of 350 W; then, a dense Mo film was deposited on the loose Mo film at a working pressure of 0.3 Pa and a sputtering power of 800 W.

[0118] S4. In the second sputtering chamber, a CIG precursor is prepared on a metal back electrode. Specifically, a CuGa / In target is provided in the second sputtering chamber. The CuGa / In target is sputtered, and the CIG precursor is deposited on the metal Mo back electrode.

[0119] S5. The selenium source is evaporated in the first transition chamber and a selenium film is formed on the CIG precursor. Specifically, the first transition chamber is equipped with a selenium source, and the selenium source is evaporated and a selenium film is formed on the CIG precursor.

[0120] S6. In the first high-temperature chamber, the CIG precursor that forms the selenium film is selenized and sulfided to obtain the CIGS light-absorbing layer; specifically, a mixed gas of H2S and N2 is introduced into the first high-temperature chamber, and the CIG precursor that forms the selenium film is selenized and sulfided at 120°C to obtain the CIGS light-absorbing layer.

[0121] S7. Anneal the CIGS light-absorbing layer in the second high-temperature chamber; specifically, during the annealing process of the CIGS light-absorbing layer in the second high-temperature chamber, a mixture of H2S and N2 gas is introduced into the second high-temperature chamber; wherein, the annealing temperature is 580℃ and the annealing time is 20min.

[0122] S8. The substrate containing the CIGS light absorption layer is removed from the sample outlet chamber.

[0123] Example 2

[0124] This embodiment provides a CIGS solar cell, which includes a CIGS light-absorbing layer, a buffer layer, a window layer, and a grid electrode sequentially stacked on the CIGS light-absorbing layer.

[0125] The CIGS light-absorbing layer was prepared using the method described in Example 1.

[0126] The buffer layer is a cadmium sulfide buffer layer with a thickness of 60 nm.

[0127] The window layer includes an i-ZnO layer and an AZO layer. Specifically, the i-ZnO layer has a thickness of 60 nm, and the AZO layer has a thickness of 120 nm. The i-ZnO layer is in contact with the buffer layer.

[0128] The gate electrode is a Ni-Al-Ni metal gate electrode; the Ni-Al-Ni metal gate electrode includes a first Ni electrode, an Al electrode deposited on the first Ni electrode, and a second Ni electrode covering the Al electrode. The first Ni electrode is in contact with the window layer (specifically, in contact with the AZO layer); the thickness of the first Ni electrode is... The thickness of the Al electrode is The thickness of the second Ni electrode is

[0129] It is understood that the technical features of the above embodiments can be combined arbitrarily. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0130] The above are merely preferred embodiments of this application, and only specifically describe the technical principles of this application. These descriptions are only for explaining the principles of this application and should not be construed as limiting the scope of protection of this application in any way. Based on this explanation, any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application, as well as other specific embodiments of this application that can be conceived by those skilled in the art without creative effort, should be included within the scope of protection of this application.

Claims

1. A method for producing a CIGS light-absorbing layer, characterized by, Includes the following steps: The substrate is introduced into the first sputtering chamber through the sample introduction chamber; A metal back electrode is fabricated on a substrate within the first sputtering chamber; CIG precursors are prepared on a metal back electrode in a second sputtering chamber; The selenium source is evaporated in the first transition chamber and a selenium film is formed on the CIG precursor. In the first high-temperature chamber, the CIG precursor for forming a selenium film is selenized and sulfurized to obtain a CIGS light-absorbing layer. The CIGS light-absorbing layer was annealed in the second high-temperature chamber; The substrate containing the CIGS light-absorbing layer is removed from the sample outlet chamber; A mixed gas containing H2S is introduced into the first high-temperature chamber to selenize and sulfide the CIG precursor that forms the selenium film, thereby obtaining a CIGS light-absorbing layer; during the annealing process of the CIGS light-absorbing layer in the second high-temperature chamber, a mixed gas containing H2S is introduced into the second high-temperature chamber; in the step of selenizing and sulfideling the CIG precursor that forms the selenium film in the first high-temperature chamber, the temperature is controlled at 110~130℃. In the step of annealing the CIGS light-absorbing layer in the second high-temperature chamber, the annealing temperature is 550~590℃.

2. A CIGS solar cell, characterized by, It includes a CIGS light absorption layer, a buffer layer, a window layer, and a gate electrode sequentially stacked on the CIGS light absorption layer; The CIGS light-absorbing layer is prepared using the preparation method described in claim 1.

Images