Semiconductor wafer carrier tray, vapor deposition equipment and thin film preparation method

Abstract

The present invention discloses a semiconductor wafer carrying tray, a vapor deposition device and a thin film preparation method. The device comprises a base and a tray. The tray is arranged on a table top of the base. A quartz cover for covering the tray is arranged above the base, and a circle of enclosure is arranged on the table top of the base around the tray. A plurality of nozzles are distributed in a circle around the tray in the enclosure, a through hole is arranged in the center of the tray, and an exhaust pipe is connected to the through hole. A bowl-shaped reflective cover is arranged in the quartz cover, and a lifting cylinder for adjusting the height of the reflective cover is arranged on the quartz cover. A heating device is arranged in the quartz cover, and a heating wire is arranged in the tray. Compared with the prior art, the present invention ensures the uniformity of the thin film on the surface of the wafer by automatically adjusting the nozzle angle to adapt to wafers of different sizes, and further improves the utilization efficiency of the reaction gas by using a discharge ring and a discharge device in combination, and has the advantages of simple operation and good deposition effect.

Description

Technical Field

[0001] The invention relates to the technical field of chemical vapor deposition coating, in particular to a semiconductor wafer carrying tray, vapor deposition equipment and a thin film preparation method. Background Art

[0002] In the semiconductor industry, thin film deposition technology is one of the key steps in manufacturing high-performance semiconductor devices. Among them, vapor deposition technology, especially chemical vapor deposition (CVD) and physical vapor deposition (PVD), is widely used in the production process of semiconductor wafers due to its advantages in film uniformity, composition control and process flexibility.

[0003] At present, semiconductor wafer vapor deposition equipment is mainly composed of reaction chamber, heating system, gas delivery system, vacuum system and control system. The reaction chamber usually adopts cylindrical or rectangular structure to adapt to wafers of different sizes. The heating system heats the reaction chamber to the required temperature by radiation or convection to promote the chemical reaction. The gas delivery system is responsible for accurately delivering the reaction gas to the reaction chamber and reacting with the wafer surface. The vacuum system is used to maintain a low-pressure environment in the reaction chamber to ensure the smooth progress of the reaction.

[0004] Wafer deposition distribution uniformity is one of the key indicators of semiconductor wafer vapor deposition technology, which directly affects the performance and reliability of semiconductor devices. The non-uniformity of deposition distribution may lead to problems such as unstable electrical performance, reduced reliability and shortened life of the device.

[0005] Although the existing technology has made significant progress, there are still some shortcomings in achieving uniformity of wafer deposition distribution. Due to the uneven distribution of wafer gas flow, the deposition rate and thickness of the film on the wafer surface may be uneven, and the microscopic morphology and crystal nucleus distribution of the wafer surface may also affect the deposition uniformity.

[0006] Therefore, it is necessary to provide semiconductor wafer carrying trays, vapor deposition equipment and thin film preparation methods, explore new vapor deposition technologies and equipment designs, optimize the design of the gas delivery system, improve the uniformity of gas flow on the wafer surface, and adopt advanced control systems and detection technologies to achieve precise control of the wafer surface micromorphology and impurity distribution. This will help to further improve the performance and efficiency of semiconductor wafer vapor deposition equipment and meet the semiconductor industry's demand for high-quality thin films. Summary of the invention

[0007] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a semiconductor wafer carrying tray and a vapor deposition device, comprising a base and a tray, wherein the tray is arranged on a table top of the base, a quartz cover capable of covering the tray is arranged above the base, and a circle of enclosure is arranged on the table top of the base around the tray;

[0008] A plurality of nozzles are distributed around the circumference of the tray in the enclosure, a through hole is provided at the center of the tray, and an exhaust pipe is connected to the through hole;

[0009] A bowl-shaped reflector is provided inside the quartz cover, and a lifting cylinder for adjusting the height of the reflector is provided on the quartz cover;

[0010] A heating device is arranged in the quartz cover, and an electric heating wire is arranged in the tray.

[0011] Further, preferably, a hoop is fixed to the outer wall of the quartz cover, and a plurality of screw rods are distributed around the circumference of the hoop, the upper end of each screw rod is rotatably connected to the connecting ring, the lower end of the screw rod passes through the base and is driven to rotate by a driving device.

[0012] Further, preferably, a plurality of suction nozzles are distributed circumferentially near the center of the upper surface of the tray.

[0013] Further, as a preference, a plurality of radially extending slide grooves are distributed on the circumference of the surface of the tray, a sliding block is slidably arranged in each of the sliding grooves, and a limiting rod is provided on the sliding block.

[0014] Further, as a preference, the bottom of the tray is rotatably disposed on a fixed ring, the fixed ring is mounted on a base, and each of the nozzles is hinged around the fixed ring.

[0015] Furthermore, as a preference, a rotating rod is fixed to the hinge shaft of each of the nozzles, a first connecting rod is hinged at one end of the rotating rod, a plurality of through grooves are provided in the fixed ring, each of the first connecting rods passes through a corresponding through groove and is hinged to a lifting ring located below the fixed ring, and an adjustable telescopic cylinder is connected between the lifting ring and the base.

[0016] Further, as a preference, the bottom of each of the sliders penetrates below the tray, a second connecting rod is hinged to the bottom of the slider, each of the second connecting rods is hinged to a rotating ring, and the rotating ring is rotatably connected to the lifting ring.

[0017] Further, as a preference, the exhaust pipe is fixedly connected to the tray, the exhaust pipe is rotatably connected to the base, a driven gear is fixed to the outer wall of the exhaust pipe, and a driving gear for driving the driven gear to rotate is provided in the base.

[0018] Further, as a preference, a discharge ring is provided above each of the nozzles, and the discharge ring is fixed on the base;

[0019] The reflector is provided with a discharge device for charging the reflector.

[0020] A method for preparing a thin film on a wafer surface using a semiconductor wafer carrying tray and a vapor deposition device, comprising:

[0021] S1. Place the wafer on the tray and adjust the telescopic cylinder to make the limit rod fit to the side of the wafer to ensure that the wafer is located in the center of the tray. At the same time, the inclination angle of the nozzle is also determined accordingly.

[0022] S2, the nozzle sucks the wafer tightly;

[0023] S3, by driving the screw to rotate, the quartz cover is closely fitted with the base and the enclosure to form a closed space, and the vacuum pump is started to evacuate the interior to a vacuum state through the exhaust pipe;

[0024] S4, heating the tray and the quartz cover by means of electric heating wires and a temperature raising device to make the inside reach a predetermined temperature;

[0025] S5, driving the tray to rotate by driving the gear to rotate the wafer;

[0026] S6, the discharge ring and the discharge device are discharged, and the gas supply device is turned on to spray the reaction gas into the quartz cover through the nozzle. The reaction gas sprayed from the nozzle is charged, and the reflector is charged with the same charge, so that when the reaction gas approaches the reflector, it is repelled and reflected by the electrostatic force. The reaction gas is evenly distributed on the surface of the wafer, reacts to generate a specific dielectric, and is deposited on the surface of the wafer to form a thin film;

[0027] S7, continuously discharge the exhaust gas through the exhaust pipe;

[0028] S8. After the wafer deposition is completed, stop heating, stop gas supply, and stop exhaust. After cooling, separate the limit rod from the wafer, and then release the suction nozzle to remove the wafer from the tray.

[0029] Compared with the prior art, the present invention has the following beneficial effects:

[0030] In the present invention, the tray design in the equipment, in conjunction with the suction nozzle and the limit rod, can ensure that the wafer is stably placed in the center of the tray, avoiding deviation during the deposition process and ensuring the uniformity of the thin film. The nozzle automatically adjusts its inclination angle to adapt to wafers of different sizes, ensuring that the reaction gas can evenly cover the entire wafer surface, further improving the uniformity of deposition.

[0031] In the present invention, the discharge ring and the discharge device are used in combination, so that the reaction gas is evenly reflected on the surface of the reflector to the wafer, avoiding the problem of uneven deposition that may be caused by direct injection or side injection.

[0032] In the present invention, a certain distance is designed between the bottom of the wafer and the tray, which is conducive to the uniform discharge of exhaust gas from the exhaust pipe after the reaction is completed, avoiding the accumulation of exhaust gas on the surface of the wafer, and can also increase the contact time between the reaction gas and the wafer, thereby improving the utilization efficiency of the reaction gas.

[0033] In the present invention, the wafer is rotated during the deposition process, thereby ensuring the uniformity of deposition in the circumferential direction of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a schematic diagram of the structure of a semiconductor wafer carrying tray and a vapor deposition device;

[0035] Figure 2 It is a schematic diagram of the cross-sectional structure of a semiconductor wafer carrying tray and a vapor deposition device;

[0036] Figure 3 It is a schematic diagram of the structure of the tray and the fixing ring;

[0037] Figure 4 It is a schematic diagram of the cross-sectional structure of the tray and the fixing ring;

[0038] In the figure: 1. base; 2. tray; 21. nozzle; 22. slide groove; 23. slider; 24. limit rod; 3. quartz cover; 31. hoop; 32. screw rod; 33. connecting ring; 34. sealing ring; 4. enclosure; 5. nozzle; 51. discharge ring; 6. lifting cylinder; 7. fixing ring; 71. rotating rod; 72. first connecting rod; 73. through groove; 74. lifting ring; 75. adjusting telescopic cylinder; 76. rotating ring; 77. second connecting rod; 8. exhaust pipe; 81. driven gear; 82. driving gear; 9. reflector; 10. discharge device. DETAILED DESCRIPTION

[0039] See also Figure 1 and Figure 2 In an embodiment of the present invention, a semiconductor wafer carrying tray and a vapor deposition device include a base 1 and a tray 2. The tray 2 is arranged on a table of the base 1. A quartz cover 3 for covering the tray 2 is provided above the base 1. A circle of enclosure 4 is provided on the table of the base 1 around the tray 2.

[0040] A plurality of nozzles 5 are distributed around the circumference of the tray 2 in the enclosure 4, a through hole is provided at the center of the tray 2, and an exhaust pipe 8 is connected to the through hole;

[0041] A bowl-shaped reflector 9 is provided inside the quartz cover 3, and a lifting cylinder 6 for adjusting the height of the reflector 9 is provided on the quartz cover 3;

[0042] The quartz cover 3 is provided with a heating device, and the tray 2 is provided with a heating wire.

[0043] In this embodiment, a hoop 31 is fixed to the outer wall of the quartz cover 3, and a plurality of screw rods 32 are distributed around the hoop 31. The upper end of each screw rod 32 is rotatably connected to a connecting ring 33, and the lower end of the screw rod 32 passes through the base 1 and is driven to rotate by a driving device.

[0044] The exhaust pipe 8 is connected to a vacuum pump, and the nozzle 5 is connected to a gas supply device. The screw rod 32 is driven to rotate to lift the quartz cover 3, so that the quartz cover 3 is quickly fitted with the base 1 and the enclosure 4 and sealed. After the exhaust pipe 8 is evacuated, a vacuum environment is formed, and the nozzle 5 sprays the reaction gas into the quartz cover 3. After the predetermined temperature is reached in the quartz cover 3 and on the tray 2, a reaction occurs to generate a specific dielectric and deposit it on the wafer surface on the tray 2;

[0045] Since the reaction gas is sprayed from the nozzle 5 below to the reflector 9 in the quartz cover 3, the reaction gas is reflected from the reflector 9 to the wafer surface, thereby preventing the reaction gas from directly or laterally shooting at the wafer and causing uneven deposition distribution.

[0046] The outer wall below the quartz cover 3 is provided with a sealing ring 34, and the quartz cover 3 and the enclosure 4 are sealed by the sealing ring 34 through interference fit.

[0047] See also Figure 3 In this embodiment, a plurality of suction nozzles 21 are distributed around the center of the upper surface of the tray 2. The wafer is adsorbed on the tray 2 by the suction nozzles 21, and a certain distance is kept between the bottom of the wafer and the tray 2, which is conducive to the exhaust gas after the reaction is completed to be discharged from the exhaust pipe 8, so that the exhaust gas flows evenly from the periphery of the tray 2 to the bottom of the tray 2, which not only improves the uniformity of the reaction gas, but also increases the contact time between the reaction gas and the wafer, thereby improving the utilization efficiency of the reaction gas.

[0048] In this embodiment, the surface of the tray 2 is circumferentially distributed with multiple radially extending slide grooves 22, each of which is slidably provided with a slider 23, and the slider 23 is provided with a limit rod 24. By adjusting the sliding position of the limit rod 24 so that each limit rod 24 is at the same distance from the center of the circle and fits the side of the wafer, it is ensured that the wafer is located at the center of the tray 2, which is conducive to uniform deposition and distribution of the wafer.

[0049] In this embodiment, the bottom of the tray 2 is rotatably mounted on a fixing ring 7, the fixing ring 7 is mounted on the base 1, and each of the nozzles 5 is hinged around the fixing ring 7. By changing the inclination angle of the nozzle 5, the concentration of the reaction gas sprayed from the nozzle 5 to the reflector 9 is changed to adapt to wafers of different sizes, ensuring that the reaction gas reflected from the reflector 9 covers the entire wafer and reduces the coverage outside the wafer.

[0050] See also Figure 4In this embodiment, a rotating rod 71 is fixed to the hinge shaft of each nozzle 5, and a first connecting rod 72 is hinged at one end of the rotating rod 71. The fixed ring 7 is provided with a plurality of through slots 73. Each of the first connecting rods 72 passes through the corresponding through slots 73 and is hinged to a lifting ring 74 located below the fixed ring 7. An adjustable telescopic cylinder 75 is connected between the lifting ring 74 and the base 1. In other words, by adjusting the height of the lifting ring 74 by adjusting the telescopic cylinder 75, the first connecting rod 72 pushes the rotating rod 71 to rotate to different angles, and then each nozzle 5 is synchronously adjusted to a certain tilt angle, so as to ensure that the tilt angle of each nozzle 5 is consistent, which is conducive to uniform distribution of wafer deposition.

[0051] In this embodiment, the bottom of each slider 23 passes through the bottom of the tray 2, and a second connecting rod 77 is hinged at the bottom of the slider 23. Each of the second connecting rods 77 is hinged to a rotating ring 76, and the rotating ring 76 is rotatably connected to the lifting ring 74. When the telescopic cylinder 75 is adjusted to adjust the height of the lifting ring 74, the lifting ring 74 is also raised and lowered, so that each second connecting rod 77 synchronously pushes the corresponding slider 23 to slide to a different position from the center of the circle, so that the limit rod 24 is attached to the side of the wafer;

[0052] That is to say, when the limiting rod 24 is attached to the side surfaces of wafers of different sizes, the inclination angle of the nozzle 5 is also determined accordingly, so that the inclination angle of the nozzle 5 automatically adapts to wafers of different sizes.

[0053] In this embodiment, the exhaust pipe 8 is fixedly connected to the tray 2, and the exhaust pipe 8 is rotatably connected to the base 1. A driven gear 81 is fixed to the outer wall of the exhaust pipe 8, and a driving gear 82 for driving the driven gear 81 to rotate is provided in the base 1. The tray 2 is driven to rotate by the driving gear 82, so that the wafer is deposited during the rotation process, ensuring that the deposition distribution is uniform in the circumferential direction of the wafer.

[0054] In this embodiment, a discharge ring 51 is provided above each of the nozzles 5, and the discharge ring 51 is fixed on the base 1;

[0055] The reflector 9 is provided with a discharge device 10 for charging the reflector 9 .

[0056] When the discharge ring 51 is discharging, the reaction gas ejected from the nozzle 5 is charged, and the discharge device 10 causes the reflector 9 to be charged with the same charge, so that the reaction gas is repelled and reflected by the electrostatic force when it approaches the reflector 9, which not only improves the uniformity of the reaction gas after reflection, but also prevents the reaction gas from contacting the reflector 9 and being deposited in the reflector 9, thereby improving the utilization efficiency of the reaction gas.

[0057] A method for preparing a thin film on a wafer surface by using a semiconductor wafer carrying tray and a vapor deposition device.

[0058] Place the wafer on the tray 2, and adjust the telescopic cylinder 75 to make the limit rod 24 fit the side of the wafer to ensure that the wafer is located in the center of the tray, and the inclination angle of the nozzle 5 is also determined accordingly;

[0059] The suction nozzle 21 sucks the wafer tightly;

[0060] By driving the screw rod 32 to rotate, the quartz cover 3 is closely fitted with the base 1 and the enclosure 4 to form a closed space, and the vacuum pump is started to evacuate the interior to a vacuum state through the exhaust pipe 8;

[0061] The tray 2 and the quartz cover 3 are heated by the electric heating wire and the temperature increasing device to make the inside reach a predetermined temperature;

[0062] The tray 2 is driven to rotate by the driving gear 82, so that the wafer rotates;

[0063] The discharge ring 51 and the discharge device 10 discharge, and the gas supply device is turned on to spray the reaction gas into the quartz cover 3 through the nozzle 5. The reaction gas sprayed from the nozzle 5 is charged, and the reflector 9 is charged with the same charge, so that when the reaction gas approaches the reflector 9, it is repelled by the electrostatic force and reflected. The reaction gas is evenly distributed on the surface of the wafer, reacts to generate a specific dielectric, and is deposited on the surface of the wafer to form a thin film;

[0064] The exhaust gas is continuously discharged through the exhaust pipe 8;

[0065] After the wafer deposition is completed, the heating, gas supply and exhaust are stopped. After cooling, the limiting rod 24 is separated from the wafer, and then the suction nozzle 21 is released to remove the wafer from the tray 2.

[0066] What is described above is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A semiconductor wafer carrying tray and a vapor deposition device, comprising a base (1) and a tray (2). It is characterized in that The tray (2) is arranged on the table of the base (1); a quartz cover (3) for covering the tray (2) is provided above the base (1); a circle of enclosure (4) is provided on the table of the base (1) around the tray (2); a plurality of nozzles (5) are distributed in a circle around the tray (2) in the enclosure (4); a through hole is provided at the center of the tray (2), and an exhaust pipe (8) is connected to the through hole; a bowl-shaped reflective cover (9) is provided in the quartz cover (3), and a lifting cylinder (6) for adjusting the height of the reflective cover (9) is provided on the quartz cover (3); a heating device is provided in the quartz cover (3), and an electric heating wire is provided in the tray (2); A plurality of suction nozzles (21) are distributed circumferentially near the center of the upper surface of the tray (2); The surface of the tray (2) is circumferentially distributed with a plurality of radially extending slide grooves (22), each of the slide grooves (22) being provided with a sliding block (23) for sliding movement, and the sliding block (23) being provided with a limiting rod (24); The bottom of the tray (2) is rotatably mounted on a fixing ring (7), the fixing ring (7) is mounted on the base (1), and each of the nozzles (5) is hinged around the fixing ring (7); A rotating rod (71) is fixed to the hinge shaft of each nozzle (5), one end of the rotating rod (71) is hingedly connected to a first connecting rod (72), the fixing ring (7) is provided with a plurality of through slots (73), each of the first connecting rods (72) passes through a corresponding through slot (73) and is hingedly connected to a lifting ring (74) located below the fixing ring (7), and an adjustable telescopic cylinder (75) is connected between the lifting ring (74) and the base (1); The bottom of each slider (23) extends through the bottom of the tray (2), a second connecting rod (77) is hingedly connected to the bottom of the slider (23), each of the second connecting rods (77) is hingedly connected to a rotating ring (76), and the rotating ring (76) is rotatably connected to the lifting ring (74); A discharge ring (51) is provided above each of the nozzles (5), and the discharge ring (51) is fixed on the base (1); and a discharge device (10) for causing the reflector (9) to be charged is provided on the reflector (9).

2. The semiconductor wafer carrying tray and vapor deposition equipment according to claim 1, It is characterized in that A hoop (31) is fixed to the outer wall of the quartz cover (3), and a plurality of screw rods (32) are distributed around the circumference of the hoop (31). The upper end of each screw rod (32) is rotatably connected to a connecting ring (33), and the lower end of the screw rod (32) penetrates into the base (1) and is driven to rotate by a driving device.

3. The semiconductor wafer carrying tray and vapor deposition equipment according to claim 1, It is characterized in that The air extraction pipe (8) is fixedly connected to the tray (2), the air extraction pipe (8) is rotatably connected to the base (1), a driven gear (81) is fixed to the outer wall of the air extraction pipe (8), and a driving gear (82) for driving the driven gear (81) to rotate is provided in the base (1).

4. A method for preparing a thin film on a wafer surface using a semiconductor wafer carrier tray and a vapor deposition device, using the semiconductor wafer carrier tray and the vapor deposition device according to any one of claims 1 to 3, It is characterized in that include: S1. Place the wafer on the tray (2), and adjust the telescopic cylinder (75) so that the limit rod (24) fits against the side of the wafer to ensure that the wafer is located at the center of the tray. At the same time, the inclination angle of the nozzle (5) is also determined accordingly; S2. The suction nozzle (21) sucks the wafer tightly; S3. Drive the screw rod (32) to rotate so that the quartz cover (3) fits tightly with the base (1) and the enclosure (4) to form a closed space, start the vacuum pump, and evacuate the interior to a vacuum state through the exhaust pipe (8); S4. Heat the tray (2) and the quartz cover (3) through the electric heating wire and the heating device so that the interior reaches a predetermined temperature; S5. Drive the tray (2) to rotate through the driving gear (82) to rotate the wafer; S6. The discharge ring (51) and the discharge device (10) are discharged, and the gas supply device is turned on to spray the reaction gas into the quartz cover (3) through the nozzle (5). The reaction gas sprayed from the nozzle (5) is charged, and the reflector (9) is charged with the same charge, so that when the reaction gas approaches the reflector (9), it is repelled by the electrostatic force and reflected. The reaction gas is evenly distributed on the surface of the wafer, reacts to generate a specific dielectric, and is deposited on the surface of the wafer to form a thin film; S7, the exhaust gas is continuously discharged through the exhaust pipe (8); S8, after the wafer deposition is completed, the heating, gas supply, and exhaust are stopped. After cooling, the limit rod (24) is separated from the wafer, and the suction nozzle (21) is released to remove the wafer from the tray (2).

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