Switch cabinet sensor layout optimization method and system

Abstract

The invention discloses a switch cabinet sensor layout optimization method and system, the method comprises placing an insulation defect model and a partial discharge sensor in the switch cabinet; applying voltage to the insulation defect model to make the insulation defect model perform partial discharge, and using the partial discharge sensor to collect partial discharge signals in the switch cabinet; adjusting the installation position of the partial discharge sensor, and using the installation position corresponding to the maximum total amount of partial discharge signals in the switch cabinet as the optimal layout position of the partial discharge sensor; installing a contact heating defect model on the switch cabinet, adjusting the installation position of a first temperature sensor on the inner wall of a trolley chamber of the switch cabinet, calculating the temperature change rate corresponding to different installation positions by using the temperature values ​​measured at different installation positions and two power-on current values, and using the installation position corresponding to the maximum value of the temperature change rate as the optimal installation position of the temperature sensor; the invention improves the sensor sensitivity and detection effectiveness, and effectively improves the state perception level of the high-voltage switch cabinet.

Description

Technical Field

[0001] The present invention relates to the technical field of switch cabinets for distribution networks, and in particular to a method and system for optimizing the arrangement of sensors in switch cabinets. Background Art

[0002] High-voltage switchgear is a complete set of equipment with switches as the main body, which is assembled from related primary and secondary equipment according to a specific line scheme. It is mainly used for power generation, transmission, distribution and power conversion. With the rapid development of the power grid, the installation and use of switchgear has increased year by year. Fires and main transformer tripping caused by switchgear failures have occurred frequently, making it difficult to meet the rapid development of the power grid for equipment reliability. During the long-term operation of high-voltage switchgear, dirt, foreign matter, aging of insulation parts, etc. in the switchgear will cause discharge breakdown failures in the switchgear. Therefore, monitoring the insulation changes inside the switchgear plays an important role in realizing intelligent diagnosis of the switchgear and preventing switchgear accidents.

[0003] Based on the various sensors installed on the switch cabinet, the working and fault status of the switch cabinet can be detected from various aspects such as mechanical action, measuring point temperature, partial discharge, etc. The data collected by various sensors is a treasure trove for status evaluation of switch cabinet equipment, but the traditional switch cabinet live detection technology is difficult to effectively identify many latent defects (such as partial discharge and contact defects), and the detection effect is easily affected by the sensor layout position, and the fault perception ability is weak. Therefore, it is necessary to propose an optimization method for the layout of intelligent switch cabinet sensors, improve the sensitivity and detection effectiveness of sensors for high-voltage switch cabinet status information collection, improve the intelligent diagnosis level of high-voltage switch cabinet, and solve the problem of weak intelligent diagnosis of high-voltage switch cabinet.

[0004] In the related art, the Chinese invention patent application document with application publication number CN113405597A discloses a sensor layout structure in a switch cabinet and an evaluation method for the layout structure. The layout structure includes a housing and internal power equipment arranged in the housing. The housing also includes at least a temperature sensor, a humidity sensor, an ultrasonic partial discharge sensor, a micro-vibration sensor, an electric field sensor, and a magnetic field sensor. The sensor network is monitored and fed back in real time through an evaluation function to optimize the layout of the sensor. The scheme uses an evaluation function to quantitatively describe the sensitivity of the sensor layout scheme, but the related evaluation process is relatively cumbersome; and the analysis is only performed through simulation calculations, and the reliability needs to be further verified.

[0005] The Chinese invention patent application document with application publication number CN108802577A discloses a method for measuring and locating partial discharge in a switch cabinet, including: finding gaps on the switch cabinet; marking any two gaps that intersect and form a plane as a group; arranging at least 3 sensors in two directions on at least one group of two gaps with the intersection as the center to form a test plane; after receiving the same partial discharge signal, multiple sensors collect it through channels respectively; and locating after processing the collected ground wave transient signal. This scheme provides a simple and effective partial discharge detection method, but does not evaluate the impact of the sensor arrangement scheme on the positioning accuracy. Summary of the invention

[0006] The technical problem to be solved by the present invention is how to provide a switch cabinet sensor layout optimization method, optimize the layout of intelligent switch cabinet sensors, and solve the problem of weak intelligent diagnosis of high-voltage switch cabinets.

[0007] The present invention solves the above technical problems through the following technical means:

[0008] On the one hand, a switch cabinet sensor layout optimization method is proposed, the method comprising:

[0009] Place insulation defect models and partial discharge sensors in the switch cabinet;

[0010] Applying voltage to the insulation defect model to make the insulation defect model partially discharge, and collecting partial discharge signals in the switch cabinet by using the partial discharge sensor;

[0011] Adjusting the installation position of the partial discharge sensor, and when the total amount of partial discharge signals in the switch cabinet is the largest, the installation position of the partial discharge sensor in the switch cabinet is used as the optimal arrangement position of the partial discharge sensor;

[0012] Installing a contact heating defect model on the switch cabinet;

[0013] Adjusting the installation position of the first temperature sensor on the inner wall of the trolley chamber of the switch cabinet, and when the first temperature sensor is in different installation positions, using a large current generator to generate two different current values ​​to energize the contact heating defect model, and using the first temperature sensor to measure the temperature values ​​corresponding to the two current values;

[0014] The temperature change rates corresponding to different installation positions are calculated based on the temperature values ​​measured at different installation positions and the two power-on current values, and the installation position of the first temperature sensor corresponding to the maximum temperature change rate is taken as the optimal installation position of the first temperature sensor.

[0015] Furthermore, the insulation defect model includes a tip metal discharge model, a metal particle discharge model, a suspension discharge model and an air gap discharge model.

[0016] Furthermore, the switch cabinet includes a trolley room, a busbar room and a cable room, and the insulation defect model and the partial discharge sensor are placed in the switch cabinet, including:

[0017] Placing the insulation defect model in the trolley room, the busbar room and the cable room respectively;

[0018] The partial discharge sensors are respectively placed at different positions of the switch cabinet.

[0019] Further, after applying voltage to the insulation defect model to cause the insulation defect model to partially discharge, the method further includes:

[0020] Pass the switch cabinet housing grounding wire through a pulse current detection coil, and transmit the signal generated by the pulse current detection coil to an oscilloscope;

[0021] The current pulse signal displayed by the oscilloscope is used to determine whether the partial discharge signal appears in the switch cabinet.

[0022] Further, the adjusting the installation position of the partial discharge sensor and taking the installation position of the partial discharge sensor in the switch cabinet as the optimal arrangement position of the partial discharge sensor when the total amount of partial discharge signal in the switch cabinet is the largest includes:

[0023] Applying voltage to the insulation defect model installed in the trolley room, and using the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet as a first partial discharge signal;

[0024] Applying voltage to the insulation defect model installed in the busbar chamber, and using the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet as a second partial discharge signal;

[0025] Applying voltage to the insulation defect model installed in the cable room, and using the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet as a third partial discharge signal;

[0026] The installation position of the partial discharge sensor is continuously adjusted, and when the sum of the first partial discharge signal, the second partial discharge signal and the third partial discharge signal is the largest, the installation position of the partial discharge sensor in the switch cabinet is used as the optimal arrangement position of the partial discharge sensor.

[0027] Furthermore, the method further comprises:

[0028] The moving contact and the contact arm of the contact heating defect model are respectively installed with a second temperature sensor and a third temperature sensor, and the measurement accuracy of the second temperature sensor and the third temperature sensor is lower than that of the first temperature sensor.

[0029] Furthermore, the method further comprises:

[0030] The contact heating defect model is manufactured by adopting the method of electric soldering iron welding and adjusting the tightness of the plum blossom contact.

[0031] Furthermore, the calculation formula of the temperature change rate is:

[0032]

[0033] Where: T1 and T2 are the temperature measurement values ​​corresponding to two different current values, I1 and I2 are two different current values, T R is the rate of temperature change.

[0034] In addition, the present invention also proposes a switch cabinet sensor layout optimization system, the system comprising: a partial discharge defect detection experimental device, a data processing device and a large current generator, an insulation defect model and a partial discharge sensor are arranged in the switch cabinet, the output voltage of the partial discharge defect detection experimental device is applied to the insulation defect model to make the insulation defect model perform partial discharge, the partial discharge sensor is connected to the data processing device to send the collected partial discharge signal in the switch cabinet to the data processing device, the data processing device is used to compare the total amount of partial discharge signal in the switch cabinet when the partial discharge sensor is installed at different installation positions, and the installation position of the partial discharge sensor corresponding to the maximum total amount of partial discharge signal in the switch cabinet is used as the optimal layout position of the partial discharge sensor;

[0035] A contact heating defect model is installed on the switch cabinet, and a first temperature sensor is installed on the inner wall of the trolley chamber of the switch cabinet; the high current generator is connected to the switch cabinet to provide the switch cabinet with power-on currents of different current values, and the first temperature sensor is connected to the data processing device to send the temperature values ​​and power-on current values ​​measured at different installation positions to the data processing device; the data processing device is also used to calculate the temperature change rates corresponding to different installation positions based on the temperature values ​​and power-on current values ​​measured at different installation positions, and use the installation position of the first temperature sensor corresponding to the maximum temperature change rate as the optimal installation position of the first temperature sensor.

[0036] Furthermore, the partial discharge defect detection experimental equipment includes a voltage regulator, an industrial frequency experimental transformer and a protective resistor; the voltage regulator is connected to the industrial frequency experimental transformer, and the output voltage of the industrial frequency experimental transformer is applied to the insulation defect model via the protective resistor.

[0037] Furthermore, the partial discharge defect detection experimental equipment also includes a capacitive voltage divider, a pulse current detection coil and an oscilloscope;

[0038] One end of the capacitive voltage divider is connected to one end of the output coil of the power frequency test transformer via the protection resistor, and the other end of the capacitive voltage divider is connected to the other end of the output coil of the power frequency test transformer;

[0039] The voltage output point of the capacitive voltage divider is connected to the oscilloscope, the switch cabinet housing grounding wire is connected to the pulse current detection coil, and the current output point of the pulse current detection coil is connected to the oscilloscope.

[0040] Furthermore, the insulation defect model includes a tip metal discharge model, a metal particle discharge model, a suspension discharge model and an air gap discharge model.

[0041] Furthermore, the switch cabinet comprises a trolley room, a busbar room and a cable room, the insulation defect models are respectively arranged in the trolley room, the busbar room and the cable room, and the partial discharge sensors are respectively placed at different positions of the switch cabinet.

[0042] Furthermore, the data processing device comprises:

[0043] A partial discharge signal acquisition unit, used to respectively acquire a first partial discharge signal, a second partial discharge signal and a third partial discharge signal, wherein the first partial discharge signal is the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet when a voltage is applied to the insulation defect model installed in the trolley room, the second partial discharge signal is the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet when a voltage is applied to the insulation defect model installed in the busbar room, and the third partial discharge signal is the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet when a voltage is applied to the insulation defect model installed in the cable room;

[0044] A comparison unit, used for comparing the magnitude of the sum of the first partial discharge signal, the second partial discharge signal and the third partial discharge signal when the partial discharge sensor is installed at different positions;

[0045] The partial discharge sensor position determination unit is used to determine the installation position of the partial discharge sensor in the switch cabinet as the optimal arrangement position of the partial discharge sensor when the sum of the first partial discharge signal, the second partial discharge signal and the third partial discharge signal is the largest.

[0046] Furthermore, the moving contact and the contact arm of the contact heating defect model are respectively installed with a second temperature sensor and a third temperature sensor, and the measurement accuracy of the second temperature sensor and the third temperature sensor is lower than that of the first temperature sensor.

[0047] Furthermore, the contact heating defect model is prepared by welding with an electric soldering iron and adjusting the tightness of the plum blossom contact.

[0048] Furthermore, the data processing device further includes:

[0049] The temperature change rate calculation unit is used to calculate the temperature change rate corresponding to the different installation positions based on the temperature values ​​measured at the different installation positions and the two power-on current values ​​when the first temperature sensor is located at different installation positions, wherein the calculation formula of the temperature change rate is:

[0050]

[0051] Where: T1 and T2 are the temperature measurement values ​​corresponding to two different current values, I1 and I2 are two different current values, T R is the temperature change rate;

[0052] The temperature sensor installation position determining unit is used to determine the installation position of the first temperature sensor corresponding to when the temperature change rate takes the maximum value as the optimal installation position of the first temperature sensor.

[0053] The advantages of the present invention are:

[0054] (1) Since the traditional switch cabinet live detection technology is difficult to effectively identify many latent defects, and the detection effect is easily affected by the discharge position and the instrument detection position, the present invention makes an insulation defect model and places it in the switch cabinet, applies voltage to the insulation defect model to discharge it, and adjusts the installation position of the partial discharge sensor in the switch cabinet to collect the partial discharge signal in the switch cabinet. When the total amount of partial discharge signal in the switch cabinet is the largest, the installation position of the partial discharge sensor in the switch cabinet is used as the optimal arrangement position of the partial discharge sensor; a contact heating defect model is made and installed on the switch cabinet, and when the first temperature sensor is installed at different positions, the temperature change rate is calculated according to the temperature value corresponding to the current, and the position corresponding to the maximum temperature change rate is used as the optimal installation position, which can improve the sensitivity and detection effectiveness of the partial discharge sensor and the temperature sensor, thereby effectively improving the state perception level of the high-voltage switch cabinet and solving the problem of weak intelligent diagnosis of the high-voltage switch cabinet. In addition, the optimal arrangement scheme of the sensor is easy to promote and has a high reference value for the arrangement of sensors of the same type of high-voltage switch cabinet.

[0055] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] Figure 1 It is a flow chart of a switch cabinet sensor arrangement optimization method proposed in one embodiment of the present invention;

[0057] Figure 2 Schematic diagram of an insulation defect model in an embodiment of the present invention, (a) represents a tip discharge model, (b) represents a metal particle discharge model, (c) represents a suspension discharge model, and (d) represents an air gap discharge model;

[0058] Figure 3 is a schematic diagram of the installation of an insulation defect model in one embodiment of the present invention;

[0059] Figure 4 Schematic diagram of the installation position of the partial discharge sensor in one embodiment of the present invention, (a) is a schematic diagram of the arrangement of the sensor on the front of the switch cabinet, (b) is a schematic diagram of the arrangement of the sensor on the side of the switch cabinet;

[0060] Figure 5 Schematic diagram of a normal contact and a contact heating defect model in one embodiment of the present invention, (a) represents a normal contact, (b) represents a contact heating defect model;

[0061] Figure 6 Schematic diagram of the installation position of the first temperature sensor and the second temperature sensor in one embodiment of the present invention, (a) is a schematic diagram of the installation position of the first temperature sensor, (b) is a schematic diagram of the installation position of the second temperature sensor;

[0062] Figure 7 It is a structural schematic diagram of a switch cabinet sensor layout optimization system proposed in one embodiment of the present invention. DETAILED DESCRIPTION

[0063] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in combination with the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0064] Example 1

[0065] like Figure 1 As shown, the first embodiment of the present invention proposes a switch cabinet sensor layout optimization method, the method comprising the following steps:

[0066] S10. Place insulation defect models and partial discharge sensors in the switch cabinet;

[0067] S20, applying voltage to the insulation defect model to make the insulation defect model perform partial discharge, and using the partial discharge sensor to collect partial discharge signals in the switch cabinet;

[0068] S30, adjusting the installation position of the partial discharge sensor, and when the total amount of partial discharge signals in the switch cabinet is the largest, the installation position of the partial discharge sensor in the switch cabinet is used as the optimal arrangement position of the partial discharge sensor;

[0069] S40, installing a contact heating defect model on the switch cabinet;

[0070] S50, adjusting the installation position of the first temperature sensor on the inner wall of the trolley chamber of the switch cabinet, and when the first temperature sensor is in different installation positions, using a large current generator to generate two different current values ​​to energize the contact heating defect model, and using the first temperature sensor to measure the temperature values ​​corresponding to the two current values;

[0071] S60, calculating the temperature change rates corresponding to different installation positions based on the temperature values ​​measured at different installation positions and the two power-on current values, and taking the installation position of the first temperature sensor corresponding to the maximum temperature change rate as the optimal installation position of the first temperature sensor.

[0072] In this embodiment, an insulation defect model and a contact heating defect model are prepared, a voltage is applied to the insulation defect model to discharge it, a partial discharge sensor arranged in the switch cabinet is used to collect partial discharge signals in the switch cabinet, and the installation position of the partial discharge sensor in the switch cabinet is adjusted. When the total amount of partial discharge signals in the switch cabinet is the largest, the installation position of the partial discharge sensor in the switch cabinet is used as the optimal arrangement position of the partial discharge sensor, the contact heating defect model is energized, and the corresponding temperature change rate is calculated according to the temperature value corresponding to the power-on current value measured by the first temperature sensor at different installation positions, and the installation position corresponding to the maximum temperature change rate is used as the optimal installation position. This scheme obtains the optimal arrangement scheme of the sensor through the idea of ​​enumeration and trial, improves the sensitivity and detection effectiveness of the sensor, thereby effectively improving the state perception level of the high-voltage switch cabinet, and avoids complex formula calculations. The optimal arrangement scheme of the sensor is easy to promote, has a high reference value for the sensor arrangement of the same type of high-voltage switch cabinet, and is expected to be more widely used in actual engineering sites.

[0073] In one embodiment, the main reasons for partial discharge in the actual working condition of the switch cabinet are the various non-uniform electric fields in the switch cabinet, such as burrs, sharp metals, and the bubbles or impurities in the dielectric of the insulation equipment in the cabinet that are inevitably present during the manufacturing and transportation process. Figure 2 As shown, the insulation defect models prepared in this embodiment include but are not limited to a tip metal discharge model, a metal particle discharge model, a suspension discharge model, and an air gap discharge model.

[0074] In one embodiment, the switch cabinet includes a trolley room, a busbar room, and a cable room, and the step S10: placing an insulation defect model and a partial discharge sensor in the switch cabinet includes the following steps:

[0075] Placing the insulation defect model in the trolley room, the busbar room and the cable room respectively;

[0076] The partial discharge sensors are respectively placed at different positions of the switch cabinet.

[0077] It should be noted that if Figure 3 As shown in Figure 1, typical internal insulation defect models of high-voltage switchgear such as tip discharge, metal particle discharge and suspension discharge are set in the trolley room, busbar room and cable room respectively; Figure 4 As shown, partial discharge sensors are installed at different positions of the inner wall of the switch cabinet housing, such as the top, side and front.

[0078] It should be noted that the partial discharge sensor is adsorbed on the inner wall of the high-voltage switch cabinet housing by a magnet to collect the partial discharge signal generated by the insulation defect model.

[0079] It should be understood that the partial discharge sensor specifically refers to an ultra-high frequency sensor, a geomagnetic wave sensor or an ultrasonic sensor, etc.

[0080] In one embodiment, after applying a voltage to the insulation defect model in step S20 to cause the insulation defect model to partially discharge, the method further includes:

[0081] Pass the switch cabinet housing grounding wire through a pulse current detection coil, and transmit the signal generated by the pulse current detection coil to an oscilloscope;

[0082] The current pulse signal displayed by the oscilloscope is used to determine whether the partial discharge signal appears in the switch cabinet.

[0083] It should be noted that, in this embodiment, after applying voltage to the insulation defect model, in order to verify the occurrence of partial discharge, the switch cabinet casing grounding wire is passed through a pulse current detection coil, and the signal generated by the coil is transmitted to the oscilloscope, and the occurrence of partial discharge is confirmed by observing the current pulse signal.

[0084] In one embodiment, the step S30: adjusting the installation position of the partial discharge sensor, and when the total amount of partial discharge signal in the switch cabinet is the largest, the installation position of the partial discharge sensor in the switch cabinet is used as the optimal arrangement position of the partial discharge sensor, comprises the following steps:

[0085] S31, applying voltage to the insulation defect model installed in the trolley room, and using the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet as a first partial discharge signal;

[0086] S32, applying voltage to the insulation defect model installed in the busbar chamber, and using the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet as a second partial discharge signal;

[0087] S33, applying voltage to the insulation defect model installed in the cable room, and using the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet as a third partial discharge signal;

[0088] S34. Continuously adjust the installation position of the partial discharge sensor, and when the sum of the first partial discharge signal, the second partial discharge signal and the third partial discharge signal is the largest, the installation position of the partial discharge sensor in the switch cabinet is used as the optimal arrangement position of the partial discharge sensor.

[0089] Specifically, by applying voltage to the insulation defect model installed in the trolley room, the partial discharge amounts pc1, pc2 and pc3 collected by the partial discharge sensors installed on the top, side walls and front of the high-voltage switchgear are recorded, and the total sensing amount of partial discharge occurring in the trolley room collected by the partial discharge sensor installed at the current position is p1=pc1+pc2+pc3.

[0090] The same method is used to apply voltage to the insulation defect models installed in the busbar room and the cable room, respectively, and the total sensing amount p2 and p3 of the partial discharge sensor installed at the current position to the partial discharge occurring in the busbar room and the cable room are calculated. Then the total sensing amount p of the partial discharge sensor installed at the current position to the partial discharge occurring at different positions of the switch cabinet is p = p1 + p2 + p3.

[0091] Adjust the installation position of the partial discharge sensor on the top, side wall and front of the high-voltage switchgear, and record the total sensing value p of the partial discharge sensor to the partial discharge occurring at different positions of the switchgear. When the total sensing value p is the largest, select the installation position at this time as the optimal layout position of the partial discharge sensor.

[0092] In one embodiment, the moving contact and the contact arm of the contact heating defect model are respectively installed with a second temperature sensor and a third temperature sensor, and the measurement accuracy of the second temperature sensor and the third temperature sensor is lower than that of the first temperature sensor.

[0093] It should be noted that the second temperature sensor and the third temperature sensor are respectively fixed on the moving contact and directly tied to the contact arm by screws, and are used to collect the temperature changes of the contact and the contact arm when the contact heating defect model is energized. The third temperature sensor is used to measure the temperature change of the switch cabinet wall. The second temperature sensor and the third temperature sensor can more accurately reflect the contact temperature, but the maintenance is more difficult; the first temperature sensor is more convenient to install, but the perception ability is relatively limited when the contact temperature changes rapidly. This embodiment uses a multi-temperature sensor arrangement to improve the reliability of temperature measurement.

[0094] This embodiment installs a contact heating defect model on the switch cabinet, and installs a first temperature sensor on the inner wall of the trolley chamber of the switch cabinet, adjusts the installation position of the first temperature sensor, and calculates the temperature change rates corresponding to different installation positions based on the temperature values ​​measured at different installation positions and the two power-on current values ​​at different installation positions; the installation position of the first temperature sensor corresponding to the maximum temperature change rate is used as the optimal installation position of the first temperature sensor, thereby improving the detection effectiveness of the temperature sensor arranged in the high-voltage switch cabinet.

[0095] In one embodiment, during the long-term operation of the high-voltage switch cabinet, its internal contacts and contacts will age and become dirty, and the plum blossom contacts may wear and soften. In severe cases, welding may occur. Therefore, it is necessary to use an appropriate method to simulate the heating defect of the contact. The comparison diagram of the normal contact and the defective contact is shown in Figure 5 There are many methods for making a contact heating defect model. In this embodiment, the contact heating defect model is made by using methods such as electric soldering and adjusting the tightness of the plum blossom contact to simulate the contact heating defect.

[0096] In one embodiment, if Figure 6 As shown, the second temperature sensor and the third temperature sensor are respectively fixed on the moving contact and directly tied to the contact arm with screws, the first temperature sensor is a high-precision temperature sensor, and the second temperature sensor and the third temperature sensor are both ordinary temperature sensors.

[0097] It should be noted that, since the second temperature sensor and the third temperature sensor are very close to the contact, while the first temperature sensor is far from the contact, when the contact temperature changes, the change of the second temperature sensor ≥ the change of the third temperature sensor > the change of the first temperature sensor. Therefore, the accuracy of the first temperature sensor needs to be higher than that of the second temperature sensor and the third temperature sensor in order to reliably measure the temperature change.

[0098] In one embodiment, the temperature change rate is calculated as follows:

[0099]

[0100] Where: T1 and T2 are the temperature measurement values ​​corresponding to two different current values, I1 and I2 are two different current values, T R is the rate of temperature change.

[0101] Specifically, this embodiment uses a large current generator to energize the high-voltage switch cabinet equipped with the heating defect model contact, and the energizing current is 0.5I N and I N (where I N =1250A). After the temperature rise stabilizes, calculate the temperature change rate T R , where T1 and T2 are the first and second temperature measurement values, that is, the current is 0.5I N and I N The temperature at that time; I1 and I2 are the first and second current acquisition values, i.e. 0.5I N and I N , calculate the temperature change rate T R Then adjust the first temperature sensor to the position of the inner wall of the trolley, re-energize the switch cabinet and measure the temperature value.R When the value is maximum, the installation position of the first temperature sensor is the optimal position of the high-precision temperature sensor.

[0102] Example 2

[0103] like Figure 7 As shown, the second embodiment of the present invention proposes a switch cabinet sensor layout optimization system, the system comprising: a partial discharge defect detection experimental device 10, a data processing device 40 and a large current generator, an insulation defect model 20 and a partial discharge sensor 30 are arranged in the switch cabinet 50, the output voltage of the partial discharge defect detection experimental device 10 is applied to the insulation defect model 20 to make the insulation defect model 20 perform partial discharge, the partial discharge sensor 30 is connected to the data processing device 40 for sending the collected partial discharge signal in the switch cabinet 50 to the data processing device 40, the data processing device 40 is used to compare the total amount of partial discharge signal in the switch cabinet 50 when the partial discharge sensor 30 is installed at different installation positions, and when the total amount of partial discharge signal in the switch cabinet 50 is the largest, the installation position of the partial discharge sensor 30 in the switch cabinet 50 is used as the optimal layout position of the partial discharge sensor 30;

[0104] A contact heating defect model is installed on the switch cabinet, and a first temperature sensor is installed on the inner wall of the trolley chamber of the switch cabinet; the high current generator is connected to the switch cabinet to provide the switch cabinet with power-on currents of different current values, and the first temperature sensor is connected to the data processing device to send the temperature values ​​and power-on current values ​​measured at different installation positions to the data processing device; the data processing device is also used to calculate the temperature change rates corresponding to different installation positions based on the temperature values ​​and power-on current values ​​measured at different installation positions, and use the installation position of the first temperature sensor corresponding to the maximum temperature change rate as the optimal installation position of the first temperature sensor.

[0105] It should be noted that the insulation defect model includes a tip metal discharge model, a metal particle discharge model, a suspension discharge model and an air gap discharge model.

[0106] In one embodiment, the partial discharge defect detection experimental equipment 10 includes a voltage regulator 11, an industrial frequency experimental transformer 12 and a protective resistor 13; the voltage regulator 11 is connected to the industrial frequency experimental transformer 12, and the output voltage of the industrial frequency experimental transformer 12 is applied to the insulation defect model 20 via the protective resistor 13.

[0107] In one embodiment, the partial discharge defect detection experimental equipment 10 further includes a capacitive voltage divider 14, a pulse current detection coil 15 and an oscilloscope 16;

[0108] One end of the capacitive voltage divider 14 is connected to one end of the output coil of the power frequency test transformer 12 via the protection resistor 13, and the other end of the capacitive voltage divider 14 is connected to the other end of the output coil of the power frequency test transformer 12;

[0109] The voltage output point of the capacitive voltage divider 14 is connected to the oscilloscope 16 , the switch cabinet housing grounding wire is connected to the pulse current detection coil 15 , and the current output point of the pulse current detection coil 15 is connected to the oscilloscope 16 .

[0110] It should be noted that the output voltage of the power frequency test transformer is added to the insulation defect model through the protection resistor to cause partial discharge. To verify the occurrence of partial discharge, the switch cabinet housing grounding wire passes through the pulse current detection coil, and the signal generated by the coil is transmitted to the oscilloscope. The occurrence of partial discharge is confirmed by observing the current pulse signal. After the partial discharge sensor collects the partial discharge signal, it is transmitted to the data acquisition module 60, and the data acquisition module 60 transmits it to the data processing device 40.

[0111] During the experiment, the voltage regulator can be used manually to control the output voltage of the power frequency test transformer, and the capacitor voltage divider can be used to measure and record the transformer output voltage.

[0112] In one embodiment, the switch cabinet includes a trolley room, a busbar room and a cable room, and the insulation defect models are respectively arranged in the trolley room, the busbar room and the cable room, and the partial discharge sensors are respectively placed at different positions of the inner wall of the switch cabinet shell, such as the top and side of the inner wall of the shell.

[0113] In one embodiment, the data processing device comprises:

[0114] A partial discharge signal acquisition unit, used to respectively acquire a first partial discharge signal, a second partial discharge signal and a third partial discharge signal, wherein the first partial discharge signal is the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet when a voltage is applied to the insulation defect model installed in the trolley room, the second partial discharge signal is the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet when a voltage is applied to the insulation defect model installed in the busbar room, and the third partial discharge signal is the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet when a voltage is applied to the insulation defect model installed in the cable room;

[0115] A comparison unit, used for comparing the magnitude of the sum of the first partial discharge signal, the second partial discharge signal and the third partial discharge signal when the partial discharge sensor is installed at different positions;

[0116] The partial discharge sensor position determination unit is used to determine the installation position of the partial discharge sensor in the switch cabinet as the optimal arrangement position of the partial discharge sensor when the sum of the first partial discharge signal, the second partial discharge signal and the third partial discharge signal is the largest.

[0117] In one embodiment, the moving contact and the contact arm of the contact heating defect model are respectively installed with a second temperature sensor and a third temperature sensor, and the measurement accuracy of the second temperature sensor and the third temperature sensor is lower than that of the first temperature sensor.

[0118] It should be noted that the contact heating defect model is prepared by using electric soldering iron and adjusting the tightness of the plum blossom contact.

[0119] In one embodiment, a large current generator is used to generate a large current and energize the contact heating defect model. The second temperature sensor and the third temperature sensor installed on the moving contact and the contact arm will sense the temperature change and transmit it back to the data acquisition module and the data processing device.

[0120] In this embodiment, the first temperature sensor is a high-precision temperature sensor, and the optimization process continuously adjusts the installation position of the first temperature sensor, such as Figure 7 As shown; the second temperature sensor and the third temperature sensor are both temperature sensors of ordinary accuracy. The first temperature sensor, the second temperature sensor and the third temperature sensor transmit signals to the data acquisition module via wired means, and then the data acquisition module transmits the signals to the data processing device.

[0121] In one embodiment, the data processing device further includes:

[0122] The temperature change rate calculation unit is used to calculate the temperature change rate corresponding to the different installation positions based on the temperature values ​​measured at the different installation positions and the two power-on current values ​​when the first temperature sensor is located at different installation positions, wherein the calculation formula of the temperature change rate is:

[0123]

[0124] Where: T1 and T2 are the temperature measurement values ​​corresponding to two different current values, I1 and I2 are two different current values, T R is the temperature change rate;

[0125] The temperature sensor installation position determining unit is used to determine the installation position of the first temperature sensor corresponding to when the temperature change rate takes the maximum value as the optimal installation position of the first temperature sensor.

[0126] It should be noted that other embodiments or implementation methods of the switch cabinet sensor layout optimization system of the present invention can refer to the above-mentioned method embodiments, which will not be repeated here.

[0127] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0128] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0129] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A switch cabinet sensor layout optimization method, characterized in that: The method comprises: Place insulation defect models and partial discharge sensors in the switch cabinet; Applying voltage to the insulation defect model to make the insulation defect model partially discharge, and collecting partial discharge signals in the switch cabinet by using the partial discharge sensor; Adjusting the installation position of the partial discharge sensor, and when the total amount of partial discharge signals in the switch cabinet is the largest, the installation position of the partial discharge sensor in the switch cabinet is used as the optimal arrangement position of the partial discharge sensor; Installing a contact heating defect model on the switch cabinet; Adjusting the installation position of the first temperature sensor on the inner wall of the trolley chamber of the switch cabinet, and when the first temperature sensor is in different installation positions, using a large current generator to generate two different current values ​​to energize the contact heating defect model, and using the first temperature sensor to measure the temperature values ​​corresponding to the two current values; The temperature change rates corresponding to different installation positions are calculated based on the temperature values ​​measured at different installation positions and the two power-on current values, and the installation position of the first temperature sensor corresponding to the maximum temperature change rate is taken as the optimal installation position of the first temperature sensor.

2. The switch cabinet sensor layout optimization method according to claim 1, characterized in that: The insulation defect model includes a tip metal discharge model, a metal particle discharge model, a suspension discharge model and an air gap discharge model.

3. The switch cabinet sensor layout optimization method according to claim 1, characterized in that: The switch cabinet includes a trolley room, a busbar room and a cable room. The insulation defect model and the partial discharge sensor are placed in the switch cabinet, including: Placing the insulation defect model in the trolley room, the busbar room and the cable room respectively; The partial discharge sensors are respectively placed at different positions of the switch cabinet.

4. The switch cabinet sensor layout optimization method according to claim 1, characterized in that: After applying a voltage to the insulation defect model to cause the insulation defect model to partially discharge, the method further includes: Pass the switch cabinet housing grounding wire through a pulse current detection coil, and transmit the signal generated by the pulse current detection coil to an oscilloscope; The current pulse signal displayed by the oscilloscope is used to determine whether the partial discharge signal appears in the switch cabinet.

5. The switch cabinet sensor layout optimization method according to claim 3, characterized in that: The step of adjusting the installation position of the partial discharge sensor and using the installation position of the partial discharge sensor in the switch cabinet as the optimal arrangement position of the partial discharge sensor when the total amount of the partial discharge signal in the switch cabinet is the largest includes: Applying voltage to the insulation defect model installed in the trolley room, and using the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet as a first partial discharge signal; Applying voltage to the insulation defect model installed in the busbar chamber, and using the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet as a second partial discharge signal; Applying voltage to the insulation defect model installed in the cable room, and using the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet as a third partial discharge signal; The installation position of the partial discharge sensor is continuously adjusted, and when the sum of the first partial discharge signal, the second partial discharge signal and the third partial discharge signal is the largest, the installation position of the partial discharge sensor in the switch cabinet is used as the optimal arrangement position of the partial discharge sensor.

6. The switch cabinet sensor layout optimization method according to claim 1, characterized in that: The moving contact and the contact arm of the contact heating defect model are respectively installed with a second temperature sensor and a third temperature sensor, and the measurement accuracy of the second temperature sensor and the third temperature sensor is lower than that of the first temperature sensor.

7. The switch cabinet sensor layout optimization method according to claim 1, characterized in that: The method further comprises: The contact heating defect model is manufactured by adopting the method of electric soldering iron welding and adjusting the tightness of the plum blossom contact.

8. The switch cabinet sensor layout optimization method according to claim 1, characterized in that: The calculation formula of the temperature change rate is: Where: T1 and T2 are the temperature measurement values ​​corresponding to two different current values, I1 and I2 are two different current values, T R is the rate of temperature change.

9. A switch cabinet sensor layout optimization system, characterized in that: The system comprises: a partial discharge defect detection experimental device, a data processing device and a large current generator; an insulation defect model and a partial discharge sensor are arranged in the switch cabinet; the output voltage of the partial discharge defect detection experimental device is applied to the insulation defect model to make the insulation defect model perform partial discharge; the partial discharge sensor is connected to the data processing device to send the collected partial discharge signal in the switch cabinet to the data processing device; the data processing device is used to compare the total amount of partial discharge signal in the switch cabinet when the partial discharge sensor is installed at different installation positions, and the installation position of the partial discharge sensor corresponding to the maximum total amount of partial discharge signal in the switch cabinet is used as the optimal arrangement position of the partial discharge sensor; A contact heating defect model is installed on the switch cabinet, and a first temperature sensor is installed on the inner wall of the trolley chamber of the switch cabinet; the high current generator is connected to the switch cabinet to provide the switch cabinet with power-on currents of different current values, and the first temperature sensor is connected to the data processing device to send the temperature values ​​and power-on current values ​​measured at different installation positions to the data processing device; the data processing device is also used to calculate the temperature change rates corresponding to different installation positions based on the temperature values ​​and power-on current values ​​measured at different installation positions, and use the installation position of the first temperature sensor corresponding to the maximum temperature change rate as the optimal installation position of the first temperature sensor.

10. The switch cabinet sensor layout optimization system according to claim 9, characterized in that: The partial discharge defect detection experimental equipment includes a voltage regulator, an industrial frequency experimental transformer and a protective resistor; the voltage regulator is connected to the industrial frequency experimental transformer, and the output voltage of the industrial frequency experimental transformer is applied to the insulation defect model via the protective resistor.

11. The switch cabinet sensor layout optimization system according to claim 10, characterized in that: The partial discharge defect detection experimental equipment also includes a capacitive voltage divider, a pulse current detection coil and an oscilloscope; One end of the capacitive voltage divider is connected to one end of the output coil of the power frequency test transformer via the protection resistor, and the other end of the capacitive voltage divider is connected to the other end of the output coil of the power frequency test transformer; The voltage output point of the capacitive voltage divider is connected to the oscilloscope, the switch cabinet housing grounding wire is connected to the pulse current detection coil, and the current output point of the pulse current detection coil is connected to the oscilloscope.

12. The switch cabinet sensor layout optimization system according to claim 9, characterized in that: The insulation defect model includes a tip metal discharge model, a metal particle discharge model, a suspension discharge model and an air gap discharge model.

13. The switch cabinet sensor layout optimization system according to claim 9, characterized in that: The switch cabinet comprises a trolley room, a busbar room and a cable room. The insulation defect models are respectively arranged in the trolley room, the busbar room and the cable room. The partial discharge sensors are respectively placed at different positions of the switch cabinet.

14. The switch cabinet sensor layout optimization system according to claim 13, characterized in that: The data processing device comprises: A partial discharge signal acquisition unit, used to respectively acquire a first partial discharge signal, a second partial discharge signal and a third partial discharge signal, wherein the first partial discharge signal is the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet when a voltage is applied to the insulation defect model installed in the trolley room, the second partial discharge signal is the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet when a voltage is applied to the insulation defect model installed in the busbar room, and the third partial discharge signal is the sum of partial discharge signals collected by the partial discharge sensors installed at different positions in the switch cabinet when a voltage is applied to the insulation defect model installed in the cable room; A comparison unit, used for comparing the magnitude of the sum of the first partial discharge signal, the second partial discharge signal and the third partial discharge signal when the partial discharge sensor is installed at different positions; The partial discharge sensor position determination unit is used to determine the installation position of the partial discharge sensor in the switch cabinet as the optimal arrangement position of the partial discharge sensor when the sum of the first partial discharge signal, the second partial discharge signal and the third partial discharge signal is the largest.

15. The switch cabinet sensor layout optimization system according to claim 9, characterized in that: The moving contact and the contact arm of the contact heating defect model are respectively installed with a second temperature sensor and a third temperature sensor, and the measurement accuracy of the second temperature sensor and the third temperature sensor is lower than that of the first temperature sensor.

16. The switch cabinet sensor layout optimization system according to claim 9, characterized in that: The contact heating defect model is prepared by welding with an electric soldering iron and adjusting the tightness of the plum blossom contact.

17. The switch cabinet sensor layout optimization system according to claim 9, characterized in that: The data processing device further comprises: The temperature change rate calculation unit is used to calculate the temperature change rate corresponding to the different installation positions based on the temperature values ​​measured at the different installation positions and the two power-on current values ​​when the first temperature sensor is located at different installation positions, wherein the calculation formula of the temperature change rate is: Where: T1 and T2 are the temperature measurement values ​​corresponding to two different current values, I1 and I2 are two different current values, T R is the temperature change rate; The temperature sensor installation position determining unit is used to determine the installation position of the first temperature sensor corresponding to when the temperature change rate takes the maximum value as the optimal installation position of the first temperature sensor.

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