A semi-automatic rapid annealing furnace equipment

Abstract

The invention discloses a semi-automatic rapid annealing furnace equipment in the technical field of annealing furnaces, comprising a frame, a control panel fixedly connected to the front of the frame, the control panel being used for main control of the action logic of each component; a strong current control module and a weak current control module fixedly connected in the frame, the strong current control module mainly comprising access to a main power supply; a furnace body fixedly connected in the frame, a heating mechanism provided in the furnace body, the heating mechanism being used for rapidly increasing or decreasing the temperature in the furnace body with precise temperature control; a furnace door slidably connected to the front of the furnace body, a quartz support fixedly connected to the furnace door, a wafer carrier fixedly connected to the quartz support; a taking mechanism provided above the furnace door, the taking mechanism being used for automatically taking off a wafer on the wafer carrier after the furnace door is opened; the invention solves the demand for heat treatment of products in semiconductor chip processing, the rapid annealing furnace has the functions of rapid heating and rapid cooling, and precise temperature control.

Description

Technical Field

[0001] The invention relates to the technical field of annealing furnaces, in particular to a semi-automatic rapid annealing furnace device. Background Art

[0002] Rapid annealing furnace is a key equipment in the semiconductor chip production process. Conventional annealing furnaces in the prior art have a slow heating speed and uneven heating of the product during the heat treatment process. The uneven heating may cause the product to crack or be damaged during the heat treatment process. In addition, in a high-temperature environment, the wafer or material will undergo oxidation reaction under the action of air. Therefore, when the wafer is processed in the annealing furnace, vacuum or protective gas is used. After the wafer is heat treated, the temperature of the wafer is still relatively high. If it is directly taken out of the annealing furnace and exposed to air, it will still be oxidized. Therefore, the wafer needs to be cooled to room temperature in the annealing furnace and then taken away manually, which will waste a lot of time. Summary of the invention

[0003] The object of the present invention is to provide a semi-automatic rapid annealing furnace device to solve the problems raised in the above background technology.

[0004] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a semi-automatic rapid annealing furnace equipment, comprising a frame, a control panel is fixedly connected to the front position of the frame, and the control panel is used for the main control of the action logic of each component; a strong current control module and a weak current control module are fixedly connected in the frame, and the strong current control module mainly includes the access of the main power supply; the weak current control module is used to provide the electrical components required for the logic control of the action parts of the whole machine; a furnace body is fixedly connected in the frame, and a heating mechanism is provided in the furnace body, and the heating mechanism is used to quickly increase or decrease the temperature in the furnace body and accurately control the temperature; a furnace door is slidably connected to the front position of the furnace body, a quartz bracket is fixedly connected to the furnace door, and a wafer carrier is fixedly connected to the quartz bracket; a picking mechanism is provided above the furnace door, and the picking mechanism is used to automatically remove the wafer on the wafer carrier after the furnace door is opened.

[0005] The heating mechanism includes multiple infrared lamp tubes, which penetrate the furnace body and are symmetrically distributed on the upper and lower sides of the furnace body; the furnace body is provided with a vacuum pumping mechanism, which is used to completely exhaust the air in the furnace body; the furnace body is provided with a cooling mechanism, which is used to quickly cool down the wafers in the furnace body after the heat treatment is completed.

[0006] The vacuum pumping mechanism comprises a vacuum pump, which is fixedly connected to the frame; a vacuum pumping interface is fixedly connected to the furnace body; a vacuum pumping regulating valve is connected to the vacuum pump, and the vacuum pumping interface at the other end of the vacuum pumping regulating valve is connected.

[0007] The temperature reduction mechanism comprises a process gas module, the process gas module is fixedly connected to the frame and is connected to a solenoid valve module, and the other end of the solenoid valve module is connected to the furnace body.

[0008] Two heat dissipation racks are symmetrically and fixedly connected to the left and right sides of the furnace body. The upper heat dissipation rack is fixedly connected to multiple infrared lamp tubes at the upper side, and the lower heat dissipation rack is fixedly connected to multiple infrared lamp tubes at the lower side; three exhaust outlets are connected to the heat dissipation rack; and an exhaust box is fixedly connected inside the frame.

[0009] A cooling water module is fixedly connected inside the frame, and a water inlet pipe and a water outlet pipe are connected to the cooling water module; a plurality of cooling pipes are fixedly connected to the outer wall of the furnace body, and the plurality of cooling pipes are arranged in series, and the cooling pipes at the head and tail positions are respectively connected to the water inlet pipe and the water outlet pipe.

[0010] The taking mechanism includes two limit rods, both of which are fixedly connected to the frame and a first spring is sleeved on the limit rod; a lifting frame is provided at the bottom of the two limit rods, the lifting frame is slidably connected to the two limit rods, and the upper and lower ends of the first spring are respectively fixedly connected to the lifting frame and the limit rod; the left and right sides of the bottom of the lifting frame are symmetrically slidably connected with clamping rods; the lifting frame is fixedly connected with an electric telescopic rod, the telescopic end of the electric telescopic rod is fixedly connected with a push block, the left and right sides of the push block are symmetrically rotatably connected with connecting rods, and the other ends of the connecting rods on the left and right sides are respectively rotatably connected with the clamping rods on the left and right sides; a lifting mechanism is provided on the frame, and the lifting mechanism is used to drive the lifting frame to rise and fall.

[0011] The lifting mechanism includes a rotating rod, which is rotatably connected to the frame and is provided with a sliding groove that passes through the left and right sides. A slider is slidably connected in the sliding groove, and both left and right ends of the slider are slidably connected to the lifting frame; a driving mechanism is provided on the frame, and the driving mechanism is used to drive the rotating rod to rotate.

[0012] The driving mechanism includes a cylinder, which is fixedly connected to the frame and a push plate is fixedly connected to the telescopic end of the cylinder, and the push plate is slidably connected to the frame; pull rods are symmetrically fixedly connected to the left and right sides of the front end of the push plate, and the pull rods on the left and right sides are respectively slidably connected to the limit rods on the left and right sides; the driving rods are symmetrically fixedly connected to the left and right sides of the rotating rod at the connection with the frame, and the rear end part of the pull rod is located behind the driving rod and fits with the driving rod; a second spring is fixedly connected to the front end of the furnace door, and the front end of the second spring is fixedly connected to the frame.

[0013] Compared with the prior art, the present invention has the following beneficial effects:

[0014] 1. The present invention solves the need for heat treatment of products in the semiconductor chip processing process. The rapid annealing furnace has the functions of rapid heating and rapid cooling, and the temperature control is precise. During the crystal growth and manufacturing process of semiconductor materials, due to various reasons, the crystals will have defects, impurities, and other structural defects, resulting in incomplete lattices and low conductivity after applying an electric field. After being treated in a rapid annealing furnace, the material can be repaired and the stress in the silicon wafer can be eliminated.

[0015] 2. The present invention can quickly cool down the wafers that have completed the heat treatment by injecting nitrogen into the furnace body. When the temperature of the wafer drops to a level that it will not be oxidized in the air, the furnace door is opened. Since the temperature of the wafer is still high at this time, it is inconvenient to take it out manually. The wafer can be automatically taken out by the taking mechanism. After the wafer is taken out, the heat treatment of a new wafer can be started, and the wafer to be taken out can be taken away manually after it cools down naturally. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0017] Figure 2 It is a rear view structural schematic diagram of the present invention;

[0018] Figure 3 It is a schematic diagram of the split structure of the present invention;

[0019] Figure 4 It is a structural schematic diagram of the frame in the present invention;

[0020] Figure 5 It is a schematic diagram of the structure of the rack from a second viewing angle in the present invention;

[0021] Figure 6 It is a structural schematic diagram of the furnace body in the present invention;

[0022] Figure 7 It is a structural schematic diagram of the lifting mechanism in the present invention;

[0023] Figure 8 It is a schematic diagram of the structure of the pull rod in the present invention.

[0024] In the accompanying drawings, the components represented by the reference numerals are listed as follows:

[0025] 1. Rack; 2. Control panel; 3. Strong current control module; 4. Weak current control module; 5. Furnace body; 6. Furnace door; 7. Quartz bracket; 8. Wafer carrier; 9. Infrared lamp; 10. Vacuum pump; 11. Vacuum interface; 12. Vacuum regulating valve; 13. Process gas module; 14. Solenoid valve module; 15. Heat sink; 16. Exhaust vent; 17. Exhaust box; 18. Cooling water module; 19. Water inlet pipe; 20. Water outlet pipe; 21. Cooling pipe; 22. Limit rod; 23. First spring; 24. Lifting frame; 25. Clamping rod; 26. Electric telescopic rod; 27. Push block; 28. Connecting rod; 29. ​​Rotating rod; 30. Slide; 31. Sliding block; 32. Cylinder; 33. Push plate; 34. Pull rod; 35. Driving rod; 36. Second spring. DETAILED DESCRIPTION

[0026] See also Figure 1-8 The present invention provides a technical solution: a semi-automatic rapid annealing furnace device, comprising a frame 1, a control panel 2 is fixedly connected to the front of the frame 1, and the control panel 2 is used for the main control of the action logic of each component; a strong current control module 3 and a weak current control module 4 are fixedly connected in the frame 1, and the strong current control module 3 mainly includes the access of the main power supply; the weak current control module 4 is used to provide the electrical components required for the logic control of the action components of the whole machine; a furnace body 5 is fixedly connected in the frame 1, and a heating mechanism is arranged in the furnace body 5, and the heating mechanism is used to quickly increase or decrease the temperature in the furnace body 5 and the temperature control is accurate; a furnace door 6 is slidably connected to the front of the furnace body 5, and a quartz bracket 7 is fixedly connected to the furnace door 6, and a wafer carrier 8 is fixedly connected to the quartz bracket 7; a picking mechanism is arranged above the furnace door 6, and the picking mechanism is used to automatically remove the wafer on the wafer carrier 8 after the furnace door 6 is opened;

[0027] During operation, the furnace door 6 is opened, the wafer to be heat treated is placed on the wafer carrier 8, and then the furnace door 6 is closed. The furnace door 6 pushes the wafer carrier 8 into the furnace body 5 through the quartz support 7. After the furnace door 6 is closed, the heating mechanism is started. The wafer or material can be heated to 300°C-1200°C in a very short time through the heating mechanism, thereby eliminating some defects inside the wafer or material and improving product performance. When the wafer heat treatment is completed, the furnace body 5 is opened after the wafer is cooled to a certain degree. The furnace body 5 is connected to the quartz support 7 and the wafer carrier 8. The processed wafer is taken out of the furnace body 5. At this time, the surface temperature of the wafer is still relatively high, which is not convenient for manual picking up. By starting the picking mechanism, the wafer can be automatically taken out after the furnace door 6 is opened. When the heat-treated wafer is taken out, a new wafer can be placed on the wafer carrier 8, and then the furnace door 6 is closed to perform heat treatment on the new wafer. Compared with completely cooling the wafer to room temperature in the furnace body 5, the wafer is cooled to a temperature that will not be oxidized by the picking mechanism and then taken out for natural cooling, which can effectively improve the efficiency of the overall equipment in processing wafers.

[0028] like Figure 4-6 As shown, as a further solution of the present invention, the heating mechanism includes a plurality of infrared lamp tubes 9, which penetrate the furnace body 5 and are symmetrically distributed at the upper and lower sides of the furnace body 5; the furnace body 5 is provided with a vacuum pumping mechanism, which is used to completely exhaust the air in the furnace body 5; the furnace body 5 is provided with a cooling mechanism, which is used to quickly cool down the wafers in the furnace body 5 after the heat treatment is completed;

[0029] When working, the infrared lamp tubes 9 are halogen tungsten lamps, which are divided into two layers. The infrared lamp tubes 9 are evenly arranged, and can quickly heat the temperature in the furnace body 5 to 300°C-1200°C; before heating, in order to prevent the wafers in the furnace body 5 from being oxidized, the vacuum mechanism can be started to remove the air in the furnace body 5; when the wafers are completed after heat treatment, the temperature in the furnace body 5 can be quickly reduced by starting the cooling mechanism.

[0030] like Figure 4 , Figure 6 As shown, as a further solution of the present invention, the vacuum pumping mechanism includes a vacuum pump 10, which is fixedly connected to the frame 1; a vacuum pumping interface 11 is fixedly connected to the furnace body 5; a vacuum pumping regulating valve 12 is connected to the vacuum pump 10, and the other end of the vacuum pumping regulating valve 12 is connected to the vacuum pumping interface 11;

[0031] During operation, the vacuum pump 10 is started, and the vacuum pumping speed of the furnace body 5 can be adjusted through the vacuum regulating valve 12, so as to control the vacuum degree of the furnace body 5; when the vacuum degree reaches 50mTorr, the vacuum pump 10 is stopped, and then the infrared lamp tube 9 is powered on to start heating the furnace body 5.

[0032] like Figure 4 As shown, as a further solution of the present invention, the cooling mechanism includes a process gas module 13, the process gas module 13 is fixedly connected to the frame 1 and the process gas module 13 is connected to a solenoid valve module 14, and the other end of the solenoid valve module 14 is connected to the furnace body 5;

[0033] During operation, after the wafer heat treatment is completed, the process gas module 13 is started, and then the process gas is injected into the furnace body 5 through the solenoid valve module 14; the process gas is mainly nitrogen, and the module contains a flow meter and a pressure regulating element, which mainly adjusts the process gas entering the furnace body 5. Nitrogen can be used as a protective gas when the product is heat treated in the furnace body 5. At the same time, it can quickly cool down the product during the cooling process. When the temperature of the product drops to a level that it will not be oxidized, stop injecting gas into the furnace body 5.

[0034] like Figure 5-6As shown, as a further solution of the present invention, two heat dissipation racks 15 are symmetrically fixedly connected to the left and right sides of the furnace body 5, the upper heat dissipation rack 15 is fixedly connected to the multiple infrared lamps 9 at the upper position, and the lower heat dissipation rack 15 is fixedly connected to the multiple infrared lamps 9 at the lower position; three exhaust ports 16 are connected to the heat dissipation rack 15; and an exhaust box 17 is fixedly connected inside the frame 1;

[0035] During operation, because the temperature of the infrared lamp tube 9 is relatively high, the temperature of the circuit supplying power to the lamp tube is prevented from being relatively high, so exhaust air is used to maintain convection at the lamp tube end, thereby cooling the lamp tube; the exhaust box 17 connects the cooling exhaust ports 16 of the furnace body 5 together, and then exhausts the hot air through a blower.

[0036] like Figure 4 As shown, as a further solution of the present invention, a cooling water module 18 is fixedly connected inside the frame 1, and a water inlet pipe 19 and a water outlet pipe 20 are connected to the cooling water module 18; a plurality of cooling pipes 21 are fixedly connected to the outer wall of the furnace body 5, and the plurality of cooling pipes 21 are arranged in series, and the cooling pipes 21 at the head and tail positions are connected to the water inlet pipe 19 and the water outlet pipe 20 respectively;

[0037] During operation, since the surface of the furnace body 5 will generate high temperature during operation, in order to prevent the temperature inside the frame 1 from being too high, the cooling water module 18 is started, and the cooling water module 18 transports cooling water to each cooling tube 21 through the water inlet pipe 19. After the cold water in the cooling tube 21 absorbs the heat from the surface of the furnace body 5, it is discharged through the water outlet pipe 20.

[0038] like Figure 1-3 , Figure 7-8 As shown, as a further solution of the present invention, the taking mechanism includes two limit rods 22, the two limit rods 22 are fixedly connected to the frame 1 and the limit rods 22 are sleeved with a first spring 23; a lifting frame 24 is provided at the bottom of the two limit rods 22, the lifting frame 24 is slidably connected to the two limit rods 22, and the upper and lower ends of the first spring 23 are respectively fixedly connected to the lifting frame 24 and the limit rods 22; the left and right sides of the bottom of the lifting frame 24 are symmetrically slidably connected with a clamping rod 25; an electric telescopic rod 26 is fixedly connected to the lifting frame 24, and a push block 27 is fixedly connected to the telescopic end of the electric telescopic rod 26, and the left and right sides of the push block 27 are symmetrically rotatably connected with connecting rods 28, and the other ends of the connecting rods 28 on the left and right sides are respectively rotatably connected to the clamping rods 25 on the left and right sides; a lifting mechanism is provided on the frame 1, and the lifting mechanism is used to drive the lifting frame 24 to rise and fall;

[0039] The lifting mechanism includes a rotating rod 29, which is rotatably connected to the frame 1 and has a sliding groove 30 extending therethrough. A slider 31 is slidably connected in the sliding groove 30, and both left and right ends of the slider 31 are slidably connected to the lifting frame 24. The frame 1 is provided with a driving mechanism for driving the rotating rod 29 to rotate.

[0040] The driving mechanism includes a cylinder 32, which is fixedly connected to the frame 1 and a push plate 33 is fixedly connected to the telescopic end of the cylinder 32, and the push plate 33 is slidably connected to the frame 1; the front end of the push plate 33 is symmetrically fixedly connected to the left and right sides of the pull rod 34, and the left and right pull rods 34 are respectively slidably connected to the left and right limit rods 22; the rotating rod 29 is symmetrically fixedly connected to the left and right sides of the connection position with the frame 1, and the rear end part of the pull rod 34 is located behind the drive rod 35 and fits with the drive rod 35; the front end of the furnace door 6 is fixedly connected to the second spring 36, and the front end of the second spring 36 is fixedly connected to the frame 1;

[0041] During operation, when the heat treatment of the wafers in the furnace body 5 is completed, the cylinder 32 is started, and the cylinder 32 drives the push plate 33 to move forward. When the push plate 33 moves forward, under the action of the second spring 36, the furnace door 6 begins to follow the push plate 33 to move forward and open. At this time, the furnace door 6 will drive the wafer to move outward from the furnace body 5 through the quartz support 7 and the wafer carrier 8; when the second spring 36 shrinks to the shortest extent, the furnace body 5 will no longer move forward; as the cylinder 32 drives the push plate 33 to continue to move forward, the two pull rods 34 connected to the push plate 33 are in contact with the driving rod 35 at this time and pull the driving rod 35 to rotate forward. When the driving rod 35 rotates forward, it will drive the rotating rod 29 to rotate downward. When the rotating rod 29 rotates downward, it will drive the lifting frame 24 to move downward through the slider 31. At this time, the lifting frame 24 will move vertically downward under the action of the two limit rods 22; when the lifting frame 24 moves downward, it will drive the two clamping When the two clamping rods 25 move downward, the cylinder 32 is stopped and the electric telescopic rod 26 is started. The electric telescopic rod 26 drives the push block 27 to move upward. When the push block 27 moves upward, the two connecting rods 28 respectively pull the clamping rods 25 on the left and right sides to move closer to each other, so that the wafer can be clamped. At this time, the cylinder 32 is started to drive the push plate 33 to move backward. When the push plate 33 moves backward, it drives the two pull rods 34 to move backward. The pull rod 34 no longer applies a forward thrust to the driving rod 35. At this time, under the action of the first spring 23, the lifting frame 24 drives the wafer to start moving upward, and the wafer is separated from the wafer carrier 8. At this time, a new wafer can be placed in the wafer carrier 8. As the cylinder 32 drives the push plate 33 to continue to move backward to the position in contact with the furnace door 6, the push plate 33 drives the furnace door 6 to gradually close.

Claims

1. A semi-automatic rapid annealing furnace device, comprising a frame (1), characterized in that: A control panel (2) is fixedly connected to the front of the frame (1), and the control panel (2) is used for the main control of the action logic of each component; a strong current control module (3) and a weak current control module (4) are fixedly connected inside the frame (1), and the strong current control module (3) mainly includes the access of the main power supply; the weak current control module (4) is used to provide electrical components required for the logic control of the action components of the whole machine; a furnace body (5) is fixedly connected to the frame (1), and a heating mechanism is provided inside the furnace body (5), and the heating mechanism is used to quickly increase or decrease the temperature in the furnace body (5) and accurately control the temperature; a furnace door (6) is slidably connected to the front of the furnace body (5), and a quartz support (7) is fixedly connected to the furnace door (6), and a wafer carrier (8) is fixedly connected to the quartz support (7); a taking mechanism is provided above the furnace door (6), and the taking mechanism is used to automatically remove the wafer on the wafer carrier (8) after the furnace door (6) is opened; The heating mechanism comprises a plurality of infrared lamp tubes (9), the plurality of infrared lamp tubes (9) passing through the furnace body (5) and symmetrically distributed at upper and lower sides of the furnace body (5); the furnace body (5) is provided with a vacuum pumping mechanism, the vacuum pumping mechanism is used to completely pump out the air in the furnace body (5); the furnace body (5) is provided with a cooling mechanism, the cooling mechanism is used to quickly cool down the wafers in the furnace body (5) after the heat treatment is completed; The cooling mechanism comprises a process gas module (13), the process gas module (13) is fixedly connected to the frame (1) and the process gas module (13) is connected to a solenoid valve module (14), and the other end of the solenoid valve module (14) is connected to the furnace body (5); Two heat dissipation racks (15) are symmetrically and fixedly connected to the left and right sides of the furnace body (5); the upper heat dissipation rack (15) is fixedly connected to a plurality of infrared lamp tubes (9) at the upper side, and the lower heat dissipation rack (15) is fixedly connected to a plurality of infrared lamp tubes (9) at the lower side; the heat dissipation rack (15) is connected to three exhaust ports (16); and an exhaust box (17) is fixedly connected inside the frame (1); The taking mechanism comprises two limit rods (22), the two limit rods (22) are fixedly connected to the frame (1), and a first spring (23) is sleeved on the limit rods (22); a lifting frame (24) is provided at the bottom of the two limit rods (22), the lifting frame (24) is slidably connected to the two limit rods (22), and the upper and lower ends of the first spring (23) are respectively fixedly connected to the lifting frame (24) and the limit rod (22); the left and right sides of the bottom of the lifting frame (24) are symmetrically slidable. The lifting frame (24) is rotatably connected to a clamping rod (25); an electric telescopic rod (26) is fixedly connected to the lifting frame (24); a push block (27) is fixedly connected to the telescopic end of the electric telescopic rod (26); the push block (27) is symmetrically rotatably connected to connecting rods (28) on the left and right sides; the other ends of the connecting rods (28) on the left and right sides are respectively rotatably connected to the clamping rods (25) on the left and right sides; a lifting mechanism is provided on the frame (1), and the lifting mechanism is used to drive the lifting frame (24) to rise and fall; The lifting mechanism comprises a rotating rod (29), the rotating rod (29) is rotatably connected to the frame (1), and a sliding groove (30) is provided on the rotating rod (29) and passes through the left and right sides, a sliding block (31) is slidably connected in the sliding groove (30), and both left and right ends of the sliding block (31) are slidably connected to the lifting frame (24); a driving mechanism is provided on the frame (1), and the driving mechanism is used to drive the rotating rod (29) to rotate; The driving mechanism comprises a cylinder (32), the cylinder (32) is fixedly connected to the frame (1), and a push plate (33) is fixedly connected to the telescopic end of the cylinder (32), and the push plate (33) is slidably connected to the frame (1); pull rods (34) are symmetrically fixedly connected to the left and right sides of the front end of the push plate (33), and the pull rods (34) on the left and right sides are respectively slidably connected to the limit rods (22) on the left and right sides; the rotating rod (29) is symmetrically fixedly connected to the left and right sides of the connection with the frame (1), and the rear end part of the pull rod (34) is located behind the drive rod (35) and is in contact with the drive rod (35); the front end of the furnace door (6) is fixedly connected to a second spring (36), and the front end of the second spring (36) is fixedly connected to the frame (1).

2. A semi-automatic rapid annealing furnace according to claim 1, characterized in that: The vacuum pumping mechanism comprises a vacuum pump (10), and the vacuum pump (10) is fixedly connected to the frame (1); a vacuum pumping interface (11) is fixedly connected to the furnace body (5); a vacuum pumping regulating valve (12) is connected to the vacuum pumping regulating valve (12), and the other end of the vacuum pumping regulating valve (12) is connected to the vacuum pumping interface (11).

3. The semi-automatic rapid annealing furnace equipment according to claim 1, characterized in that: A cooling water module (18) is fixedly connected inside the frame (1), and a water inlet pipe (19) and a water outlet pipe (20) are connected to the cooling water module (18); a plurality of cooling pipes (21) are fixedly connected to the outer wall of the furnace body (5), and the plurality of cooling pipes (21) are arranged in series, and the cooling pipes (21) at the head and tail positions are respectively connected to the water inlet pipe (19) and the water outlet pipe (20).

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