A waveguide package and radio frequency device for a single-line carrier photodiode

Abstract

The present invention provides a waveguide package and radio frequency device for a single-row carrier photodiode, wherein the package device comprises a circuit board and a metal package shell. An electromagnetic wave conduction microstrip line with an integrated DC bias circuit is provided on the circuit board, wherein the first port of the electromagnetic wave conduction microstrip line is bonded to the single-row carrier photodiode, and the second port is connected to a rectangular waveguide. The DC bias circuit takes the electromagnetic wave conduction microstrip line as a symmetry axis and symmetrically arranges two sections of the same high-resistance microstrip line on both sides thereof, wherein the high-resistance microstrip line is connected to the DC bias port, and multiple pairs of open-circuit branches are arranged on both sides thereof. After the upper cover and the bottom plate of the metal package shell are engaged, the interior of the shell comprises a first cavity, a second cavity and a third cavity which are connected to each other. The first cavity accommodates the single-row carrier photodiode. The second cavity accommodates the circuit board, which is arranged on the lower surface of the second cavity, and periodic metal pins are arranged on the upper surface. The third cavity is a rectangular waveguide. The present invention can improve the package integration, eliminate the resonance in the cavity, and reduce the package loss.

Description

Technical Field

[0001] The present invention relates to the technical field of electromagnetic wave waveguide packaging, and in particular to a waveguide packaging of a single-row carrier photodiode and a radio frequency device. Background Art

[0002] Terahertz waves have the characteristics of good penetration, high transmission rate, strong directionality and high safety. They have important application prospects in high-speed space communications, environmental monitoring, heterodyne detection, medical detection, nondestructive testing and national defense security. Terahertz source is the key to terahertz technology. UTC-PD has the characteristics of high responsiveness, high saturated output power and high response bandwidth, and is a very advantageous terahertz source. At present, most high-frequency devices and test equipment use standard rectangular waveguides as interfaces. Waveguide packaging of UTC-PD can enhance the protection of the device, facilitate connection with other standard devices and test equipment, and expand its application scenarios. Therefore, designing a low-loss, high-conversion-efficiency waveguide packaging structure for UTC-PD is of great significance to the development of terahertz technology.

[0003] The existing waveguide package is to assemble the chip and circuit in a metal cavity with a smooth inner wall. The chip and the circuit are connected by gold wire bonding. The circuit converts the terahertz signal output by the chip into a standard rectangular waveguide output. The circuit will radiate electromagnetic waves outward inside the cavity, which is easy to excite parallel plate mode and cavity mode in the metal cavity. These high-order modes cause resonance inside the cavity, which deteriorates the impedance matching of the circuit and increases the insertion loss. This effect will be more obvious when the frequency of the packaged electromagnetic wave is higher. Summary of the invention

[0004] In view of this, an embodiment of the present invention provides a waveguide package and a radio frequency device of a single-row carrier photodiode to improve the problem in the prior art that excessive waveguide package loss affects the performance of the radio frequency device.

[0005] One aspect of the present invention provides a waveguide packaging device for a single-row carrier photodiode, comprising:

[0006] A circuit board, wherein an electromagnetic wave conduction microstrip line with an integrated DC bias circuit is arranged on the circuit board; the first port of the electromagnetic wave conduction microstrip line is used to bond with a single-row carrier photodiode, and the second port of the electromagnetic wave conduction microstrip line is used to access a rectangular waveguide; the DC bias circuit is connected to the electromagnetic wave conduction microstrip line, and two sections of high-resistance microstrip lines of the same length are symmetrically arranged on both sides of the electromagnetic wave conduction microstrip line with the electromagnetic wave conduction microstrip line as a symmetry axis, the high-resistance microstrip line is connected to the DC bias port, and a plurality of pairs of open-circuit branches are symmetrically arranged on both sides of the high-resistance microstrip line;

[0007] A metal packaging shell, the metal packaging shell includes an upper cover and a bottom plate, and after the upper cover and the bottom plate are embedded, the interior of the shell includes a first cavity, a second cavity and a third cavity that are connected in sequence; the first cavity is used to accommodate the single-row carrier photodiode and is provided with a first aperture for accessing an optical fiber; the second cavity is used to accommodate the circuit board and is provided with a second aperture for accessing a direct current source, the circuit board is arranged on the lower surface of the second cavity, and the upper surface of the second cavity is provided with periodic metal pins of equal spacing and size protruding from the upper surface of the second cavity; the third cavity is the rectangular waveguide, and is provided with an opening for exporting a working electromagnetic wave generated by the single-row carrier photodiode.

[0008] In some embodiments of the present invention, the second port of the electromagnetic wave conducting microstrip line adopts an E-plane probe.

[0009] In some embodiments of the present invention, the open branches include: a first rectangular open branch, a second fan-shaped open branch, and a third rectangular open branch;

[0010] The distance from the first rectangular open branch to the electromagnetic wave conducting microstrip line is one quarter of the wavelength of the working electromagnetic wave; the radius of the second fan-shaped open branch, the length of the first rectangular open branch and the third rectangular open branch are all one quarter of the wavelength of the working electromagnetic wave.

[0011] In some embodiments of the present invention, the adjacent intervals between the second fan-shaped open branches, the first rectangular open branches and the third rectangular open branches are half of the wavelength of the working electromagnetic wave.

[0012] In some embodiments of the present invention, the periodic metal pins are metal cylinders with a square cross-section.

[0013] In some embodiments of the present invention, the distance from the surface of the periodic metal pins to the lower surface of the second cavity is less than one quarter of the wavelength of the working electromagnetic wave.

[0014] In some embodiments of the present invention, the stop band range of the periodic metal pins is greater than the frequency range of the working electromagnetic wave.

[0015] In some embodiments of the present invention, the circuit board adopts Rogers 5880 substrate.

[0016] In some embodiments of the present invention, the material of the metal packaging shell is copper plated with gold.

[0017] Another aspect of the present invention provides a radio frequency device based on a single-row carrier photodiode, comprising a single-row carrier photodiode and a waveguide packaging device of the single-row carrier photodiode as described in any one of the above.

[0018] The beneficial effects of the present invention are at least:

[0019] The present invention provides a waveguide package and radio frequency device for a single-row carrier photodiode, wherein the package device comprises a circuit board and a metal package shell. An electromagnetic wave conduction microstrip line with an integrated DC bias circuit is provided on the circuit board, wherein the first port of the electromagnetic wave conduction microstrip line is bonded to the single-row carrier photodiode, and the second port is connected to a rectangular waveguide. The DC bias circuit symmetrically arranges two sections of the same high-resistance microstrip line on both sides of the electromagnetic wave conduction microstrip line as a symmetry axis, wherein the high-resistance microstrip line is connected to the DC bias port, and multiple pairs of open-circuit branches are arranged on both sides thereof. After the upper cover and the bottom plate of the metal package shell are engaged, the interior of the shell comprises a first cavity, a second cavity and a third cavity which are connected. The first cavity accommodates the single-row carrier photodiode. The second cavity accommodates the circuit board, which is arranged on the lower surface of the second cavity, and periodic metal pins are arranged on the upper surface. The third cavity is a rectangular waveguide. The present invention integrates the DC bias circuit on the microstrip line to improve the package integration, and the periodic pins arranged on the upper surface of the circuit can suppress the resonance in the metal package cavity, expand the bandwidth, and reduce the package loss.

[0020] Additional advantages, purposes, and features of the present invention will be described in part in the following description, and will become apparent to those skilled in the art after studying the following, or may be learned from the practice of the present invention. The purposes and other advantages of the present invention may be achieved and obtained by the structures specifically indicated in the specification and the accompanying drawings.

[0021] Those skilled in the art will appreciate that the objectives and advantages that can be achieved with the present invention are not limited to the above specific description, and the above and other objectives that can be achieved by the present invention will be more clearly understood from the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The drawings described herein are used to provide a further understanding of the present invention, constitute a part of this application, and do not constitute a limitation of the present invention. The components in the drawings are not drawn to scale, but are only for illustrating the principles of the present invention. In order to facilitate the illustration and description of some parts of the present invention, the corresponding parts in the drawings may be enlarged, that is, they may become larger relative to other components in the exemplary device actually manufactured according to the present invention. In the drawings:

[0023] Figure 1 This is a structural diagram of a circuit board in a waveguide packaging device for a single-row carrier photodiode according to an embodiment of the present invention.

[0024] Figure 2 This is a structural diagram of a metal packaging shell in a waveguide packaging device for a single-row carrier photodiode according to an embodiment of the present invention.

[0025] Figure 3 This is an overall structural diagram of a waveguide packaging device, circuit and chip of a single-row carrier photodiode according to another embodiment of the present invention.

[0026] Figure 4 A schematic diagram of a microstrip line to waveguide conversion circuit of an integrated DC bias circuit according to another embodiment of the present invention.

[0027] Figure 5 This is an S parameter curve diagram of a microstrip line to waveguide conversion circuit according to another embodiment of the present invention.

[0028] Figure 6 Schematic diagram of a periodic metal pin according to another embodiment of the present invention.

[0029] Figure 7 This is a dispersion diagram of the metal pin unit according to another embodiment of the present invention.

[0030] Figure 8 FIG. 4 is an S parameter curve diagram of a DC bias circuit with periodic metal pins according to another embodiment of the present invention.

[0031] Fig. 9 FIG. 4 is an S parameter curve diagram of the integrated waveguide packaging structure according to another embodiment of the present invention. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the embodiments and the accompanying drawings. Here, the illustrative embodiments of the present invention and their descriptions are used to explain the present invention, but are not intended to limit the present invention.

[0033] It should also be noted that, in order to avoid obscuring the present invention due to unnecessary details, only structures and / or processing steps closely related to the solutions according to the present invention are shown in the accompanying drawings, while other details that are not closely related to the present invention are omitted.

[0034] It should be emphasized that the term “include / comprises” when used herein refers to the presence of features, elements, steps or components, but does not exclude the presence or addition of one or more other features, elements, steps or components.

[0035] It should also be noted that, unless otherwise specified, the term “connection” herein may refer not only to a direct connection but also to an indirect connection involving an intermediate.

[0036] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the accompanying drawings, the same reference numerals represent the same or similar components, or the same or similar steps.

[0037] An embodiment of the present invention provides a waveguide packaging device for a single-row carrier photodiode, comprising a circuit board and a metal packaging shell:

[0038] like Figure 1 The circuit board shown in the figure has an electromagnetic wave conducting microstrip line with an integrated DC bias circuit. The first port (i.e. Figure 1 Port 1) is used to bond with a single-row carrier photodiode, and the second port of the electromagnetic wave conduction microstrip line (i.e. Figure 1 Port 2 is used to access the rectangular waveguide. The DC bias circuit is connected to the electromagnetic wave conduction microstrip line, and two high-resistance microstrip lines of the same length are symmetrically set on both sides of the electromagnetic wave conduction microstrip line as the symmetry axis (i.e. Figure 1 The high-resistance microstrip line is connected to the DC bias port (i.e. Figure 1 As shown in port 3 and port 4), multiple pairs of open branches are symmetrically arranged on both sides of the high-resistance microstrip line.

[0039] The GCPW (grounded coplanar waveguide) in the circuit has a signal line in the middle and ground on both sides. The ground on both sides is connected to the floor on the back through metal through holes. The circuit is fixed to the lower surface of the metal cavity by conductive silver glue. The GSG (Ground-Signal-Ground) electrode of the UTC-PD is connected to the GCPW through gold wire bonding. The N poles on both sides of the UTC-PD, the ground of the GCPW and the entire shell are connected to the common ground.

[0040] The DC bias terminal is used to apply a DC bias to the UTC-PD, which can increase the saturation current of the UTC-PD and improve the output power.

[0041] Among them, the high-resistance microstrip line and multiple pairs of open branches can prevent high-frequency signals from leaking from the DC bias port, and the open branches can improve the isolation effect. The DC bias circuit adopts the design of two symmetrical DC bias ports, which is conducive to achieving electromagnetic field balance. In practical applications, one side is used to apply DC bias and the other side is an empty port.

[0042] like Figure 2 The metal packaging shell shown in the figure includes an upper cover and a bottom plate. After the upper cover and the bottom plate are embedded, the interior of the shell includes a first cavity, a second cavity and a third cavity that are connected in sequence. The first cavity is used to accommodate a single-row carrier photodiode and is provided with a first aperture for accessing an optical fiber, that is, Figure 2 A. The second cavity is used to accommodate the circuit board and is provided with a second aperture for connecting to a DC source, that is, Figure 2As shown in B. The circuit board is arranged on the lower surface of the second cavity, and the upper surface of the second cavity is provided with periodic metal pins of equal spacing and size protruding from the upper surface of the second cavity. The third cavity is a rectangular waveguide, and is provided with an opening for exporting the working electromagnetic wave generated by the single-row carrier photodiode.

[0043] The circuit board can be glued to the lower surface of the second cavity by using conductive silver glue.

[0044] The periodic metal pins on the upper surface of the second cavity form a PMC (perfect magnetic conductor package) surface on the upper surface, and the lower surface of the cavity is equivalent to a PEC (perfect electrical conductor). The upper and lower surfaces of the second cavity form a PMC-PEC structure, and controlling the distance between the PMC surface and the PEC surface can suppress the resonance in the cavity. When the distance from the surface of the periodic metal pins to the lower surface of the second cavity is less than one-quarter of the wavelength of the working electromagnetic wave, the cavity resonance can be suppressed.

[0045] Among them, rectangular waveguide is a waveguide structure used to transmit electromagnetic waves, and its cross-section is rectangular. Rectangular waveguide is used to transmit microwave and millimeter wave signals, and is commonly used in radar systems, communication systems, and microwave devices. The working electromagnetic wave is output by a standard rectangular waveguide and can be applied to a variety of application scenarios.

[0046] Rectangular waveguide is an important waveguide device that uses rectangular metal tubes to conduct electromagnetic waves. It is characterized by simple structure and high mechanical strength. There is no inner conductor in the waveguide, so it has low loss and high power capacity. Electromagnetic energy is guided and propagated in the internal space of the waveguide, which can prevent electromagnetic waves from leaking to the outside. Rectangular waveguide has low loss and large bandwidth, and is suitable for transmitting high-frequency signals. The size of the rectangular waveguide is related to the wavelength of the electromagnetic wave it transmits. According to different working frequency bands, a standard rectangular waveguide corresponding to the band should be selected.

[0047] In some embodiments, the periodic metal pins are metal cylinders with a square cross-section.

[0048] In some embodiments, the stop band range of the periodic metal pins is greater than the frequency range of the working electromagnetic wave.

[0049] In some embodiments, the second port of the electromagnetic wave conducting microstrip line adopts an E-plane probe. The E-plane probe is a metal sheet inserted into a rectangular waveguide. Since the metal sheet is parallel to the electric field direction of the main mode of the waveguide, it is called an E-plane probe. The E-plane probe can convert the quasi-TEM mode transmitted by the microstrip line into the main mode TE transmitted by the waveguide. 10 mold.

[0050] In some embodiments, the open branches include: a first rectangular open branch, a second fan-shaped open branch, and a third rectangular open branch.

[0051] Among them, the fan-shaped open branch is a generalization of the rectangular open branch, and its bandwidth can be expanded by expanding the angle of the fan.

[0052] The distance from the first rectangular open branch to the electromagnetic wave conducting microstrip line is one quarter of the wavelength of the working electromagnetic wave. The radius of the second fan-shaped open branch, the length of the first rectangular open branch and the third rectangular open branch are all one quarter of the wavelength of the working electromagnetic wave.

[0053] In some embodiments, the adjacent intervals between the second fan-shaped open branches, the first rectangular open branches and the third rectangular open branches are half the wavelength of the working electromagnetic wave. According to the half-wavelength transmission line theory, such an arrangement can enable the open branches to achieve the same effect.

[0054] In some embodiments, the circuit board uses a Rogers 5880 substrate.

[0055] In some embodiments, the material of the metal package shell is copper plated with gold.

[0056] By installing the UTC-PD (single carrier photodiode) in the first cavity of this embodiment, a basic radio frequency device can be assembled. For example, when the device is used as a terahertz source to generate a terahertz frequency band of 170-260 GHz, the terahertz wave obtained by the UTC-PD beat frequency in the first cavity is converted to a standard rectangular waveguide output in the third cavity through the circuit of the second cavity.

[0057] Another embodiment of the present invention provides a waveguide packaging device for a single-row carrier photodiode, which can output the terahertz wave output by the UTC-PD beat frequency through a standard rectangular waveguide, broaden the application scenarios of such devices, improve the integration of the overall package through circuit design, and eliminate the resonance that may be generated inside the cavity without changing the circuit size, thereby increasing the bandwidth of the device and reducing packaging losses.

[0058] The overall scheme of the device is as follows Figure 3 As shown, it includes: a UTC-PD chip, a microstrip line to waveguide conversion circuit design with an integrated DC bias circuit, and a metal packaging shell.

[0059] The UTC-PD chip targeted by this design is as follows Figure 3As shown, the yellow part is the output metal electrode, the blue part is the input passive waveguide part, the chip output form is GSG (Ground-signal-ground, ground-signal-ground), the ground ends at both ends are the N pole of the photodetector, and the middle signal end is the P pole of the photodetector. This structure couples light into a single-line carrier photodiode (UTC-PD) through an optical fiber. The UTC-PD and the conversion circuit are connected by gold wire bonding. Two laser beams with different wavelengths beat in the UTC-PD, and the terahertz signal with a frequency that is the difference between the two laser frequencies is converted to a standard rectangular waveguide output through the circuit. The entire device achieves ultra-wideband, high integration, and low loss.

[0060] The UTC-PD chip and circuit are placed in the metal package shell. Figure 3 As shown in the figure, the microstrip line to waveguide conversion circuit with integrated DC bias circuit includes a DC bias circuit and a microstrip line to waveguide conversion circuit. The circuit is made on a Rogers 5880 substrate with a thickness of 127um.

[0061] The conversion circuit can provide DC bias to UTC-PD and convert the terahertz wave obtained by UTC-PD beat frequency into a standard rectangular waveguide output. In order to solve the resonance problem caused by traditional waveguide packaging, a symmetrical DC bias structure is used to balance the electromagnetic field on both sides of the microstrip line and a PMC package (perfect magnetic conductor package) is used to suppress the internal resonance, expand the bandwidth of the waveguide package, and reduce transmission loss.

[0062] like Figure 4 In the DC bias circuit shown, high-frequency terahertz waves are transmitted from port 1 to port 2, and DC bias is provided to the UTC-PD through port 3. In order to prevent high-frequency signals from leaking from port 3, the DC port (port 3) is connected by a high-resistance line and λ on both sides of the high-resistance line. g / 4 open-circuit branches, the high-resistance line is widened at the end of the port, which is convenient for connecting to the inner core of the SMA (high-frequency coaxial connector) interface. The high-resistance line makes the input impedance from the RF end to the DC end very large, and λ g The / 4 open-circuit branches can be equivalent to capacitors, further reducing the impact of high-frequency signals on the DC end.

[0063] The fan-shaped open branches are the generalization of the rectangular open branches. By expanding the angle of the fan, its bandwidth can be expanded. Three pairs of open branches are added at the DC end to improve the isolation effect of the RF signal. The distance from the first pair of rectangular open branches to the microstrip line is λ g / 4. The length of the rectangular branch and the radius of the fan-shaped open branch are also λ g / 4. According to the half-wavelength transmission line theory, in order to achieve the same effect for the open branches, the distance between adjacent open branches is λ g / 2. Because the area of ​​the fan-shaped branches is large, if fan-shaped open branches are used, adjacent fan-shaped branches will overlap each other, so a layout of rectangular open branches, fan-shaped open branches, and rectangular open branches is adopted. Adding a DC terminal on one side of the strip line will cause the electromagnetic wave to be distorted here, and the S parameter will be deteriorated. Therefore, the DC bias circuit has a symmetrical DC bias port, but in the actual packaging process, only the left section is used to apply DC bias to the UTC-PD.

[0064] like Figure 4 As shown in the figure, the conversion from microstrip line to waveguide is realized by E-plane probe. E-plane probe can realize the conversion of electromagnetic waves from microstrip line (quasi-TEM mode) to waveguide (TE 10 The structure has the characteristics of simple structure, wide frequency band and convenient processing. This method couples the energy in the microstrip line into the rectangular waveguide through the patch extending from the microstrip line guide. The E-plane probe is inserted from the wide wall of the rectangular waveguide in a direction parallel to the electric field of the main mode of the waveguide. The distance between the probe and the short-circuit surface of the waveguide is λ. g / 4(λ g is the wavelength of the center frequency of the rectangular waveguide working frequency band), the electric field intensity at this position is the largest, and the maximum coupling efficiency can be obtained.

[0065] Figure 5 This is the S parameter curve of the conversion from microstrip line to waveguide. The structure achieves a reflection coefficient below -10dB and an insertion loss of no more than 0.2dB in the operating frequency band of 170-260GHz.

[0066] S parameter is the scattering parameter. It is an important parameter in microwave transmission and is a tool used to describe the electrical behavior of resistors under the excitation of high-frequency signals that exhibit RF characteristics. S11 is the input reflection coefficient, which is the input return loss. S21 is the forward transmission coefficient, which is the gain.

[0067] For electromagnetic waves in the range of 170-260GHz, the entire circuit size is large, and parallel plate modes are easily mixed into the cavity to produce resonance. In order to suppress the parallel plate mode in the cavity, the present invention adopts a PMC packaging method. This packaging method is to add periodic metal pins to the upper surface of the cavity to form a PMC surface on the upper surface, and form a PMC-PEC structure with the lower surface in the cavity. When the distance between the PMC surface and the PEC surface is less than one-quarter of the wavelength of the electromagnetic wave propagating between them, the parallel plate mode inside the cavity can be suppressed without affecting the transmission of electromagnetic waves near the strip line.

[0068] Figure 6 Shown is a schematic diagram of adding periodic metal pins to the upper surface of the cavity where the DC bias circuit is located.

[0069] Figure 7 This is the dispersion diagram of the metal pin unit. The stopband range of the designed metal pin unit is 139-274 GHz, which covers the target frequency band of 170-260 GHz.

[0070] Figure 8 The S parameter curve of the DC bias circuit with periodic metal pins is shown in Figure 1. In the range of 170-260GHz, the reflection coefficient is less than -10dB, the insertion loss is less than 1dB, and the isolation of the RF signal at the DC port is higher than 10dB.

[0071] The waveguide packaging structure of this embodiment uses the same circuit to provide DC bias to the UTC-PD and convert electromagnetic waves from the microstrip line to the rectangular waveguide, and has a high degree of integration. The problem of resonance in the cavity is solved by using symmetrical DC bias terminals and periodic metal pins. The packaging structure has an ultra-wide operating frequency band of 170 GHz to 260 GHz. Fig. 9 The S-parameter curve shown in the figure shows that the reflection coefficient is lower than -10dB, the insertion loss is lower than 1dB, and the isolation of the DC end to the RF signal is more than 15dB.

[0072] In summary, the present invention provides a waveguide package and radio frequency device for a single-row carrier photodiode, wherein the package device includes a circuit board and a metal package shell. An electromagnetic wave conduction microstrip line with an integrated DC bias circuit is provided on the circuit board, wherein the first port of the electromagnetic wave conduction microstrip line is bonded to the single-row carrier photodiode, and the second port is connected to a rectangular waveguide. The DC bias circuit symmetrically arranges two sections of the same high-resistance microstrip line on both sides of the electromagnetic wave conduction microstrip line as the symmetry axis, wherein the high-resistance microstrip line is connected to the DC bias port, and multiple pairs of open branches are arranged on both sides thereof. After the upper cover and the bottom plate of the metal package shell are engaged, the interior of the shell includes a first cavity, a second cavity and a third cavity which are connected. The first cavity accommodates the single-row carrier photodiode. The second cavity accommodates the circuit board, which is arranged on the lower surface of the second cavity, and periodic metal pins are arranged on the upper surface. The third cavity is a rectangular waveguide. The present invention integrates the DC bias circuit on the microstrip line to improve the package integration, and the periodic pins arranged on the upper surface of the cavity accommodating the circuit can suppress the resonance in the metal package cavity, thereby reducing the package loss.

[0073] It should be understood by those skilled in the art that the exemplary components, systems and methods described in conjunction with the embodiments disclosed herein can be implemented in hardware, software or a combination of the two. Whether it is performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention. When implemented in hardware, it can be, for example, an electronic circuit, an application specific integrated circuit (ASIC), appropriate firmware, a plug-in, a function card, etc. When implemented in software, the elements of the present invention are programs or code segments used to perform the required tasks. The program or code segment can be stored in a machine-readable medium, or transmitted on a transmission medium or a communication link via a data signal carried in a carrier.

[0074] It should be clear that the present invention is not limited to the specific configuration and processing described above and shown in the figures. For the sake of simplicity, a detailed description of the known method is omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method process of the present invention is not limited to the specific steps described and shown, and those skilled in the art can make various changes, modifications and additions, or change the order between the steps after understanding the spirit of the present invention.

[0075] In the present invention, features described and / or illustrated for one embodiment may be used in the same or similar manner in one or more other embodiments, and / or combined with features of other embodiments or replace features of other embodiments.

[0076] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the embodiments of the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A waveguide packaging device for a single-row carrier photodiode, characterized in that: include: A circuit board, wherein an electromagnetic wave conduction microstrip line with an integrated DC bias circuit is arranged on the circuit board; the first port of the electromagnetic wave conduction microstrip line is used to bond with a single-row carrier photodiode, and the second port of the electromagnetic wave conduction microstrip line is used to access a rectangular waveguide; the DC bias circuit is connected to the electromagnetic wave conduction microstrip line, and two sections of high-resistance microstrip lines of the same length are symmetrically arranged on both sides of the electromagnetic wave conduction microstrip line with the electromagnetic wave conduction microstrip line as a symmetry axis, the high-resistance microstrip line is connected to the DC bias port, and a plurality of pairs of open-circuit branches are symmetrically arranged on both sides of the high-resistance microstrip line; A metal packaging shell, the metal packaging shell includes an upper cover and a bottom plate, and after the upper cover and the bottom plate are embedded, the interior of the metal packaging shell includes a first cavity, a second cavity and a third cavity that are connected in sequence; the first cavity is used to accommodate the single-row carrier photodiode and is provided with a first aperture for accessing an optical fiber; the second cavity is used to accommodate the circuit board and is provided with a second aperture for accessing a direct current source, the circuit board is arranged on the lower surface of the second cavity, and the upper surface of the second cavity is provided with periodic metal pins of equal spacing and size protruding from the upper surface of the second cavity; the third cavity is the rectangular waveguide, and is provided with an opening for leading out the working electromagnetic wave generated by the single-row carrier photodiode.

2. The waveguide packaging device of a single-row carrier photodiode according to claim 1, characterized in that: The second port of the electromagnetic wave conducting microstrip line adopts an E-plane probe.

3. The waveguide packaging device of a single-row carrier photodiode according to claim 1, characterized in that: The open branches include: a first rectangular open branch, a second fan-shaped open branch and a third rectangular open branch; The distance from the first rectangular open branch to the electromagnetic wave conducting microstrip line is one quarter of the wavelength of the working electromagnetic wave; the radius of the second fan-shaped open branch, the length of the first rectangular open branch and the third rectangular open branch are all one quarter of the wavelength of the working electromagnetic wave.

4. The waveguide packaging device of the single-row carrier photodiode according to claim 3, characterized in that: The adjacent intervals between the second fan-shaped open branches, the first rectangular open branches and the third rectangular open branches are half of the wavelength of the working electromagnetic wave.

5. The waveguide packaging device of a single-row carrier photodiode according to claim 1, characterized in that: The periodic metal pins are metal columns with a square cross section.

6. The waveguide packaging device of a single-row carrier photodiode according to claim 1, characterized in that: The distance from the surface of the periodic metal pins to the lower surface of the second cavity is less than one quarter of the wavelength of the working electromagnetic wave.

7. The waveguide packaging device of a single-row carrier photodiode according to claim 1, characterized in that: The stop band range of the periodic metal pins is greater than the frequency range of the working electromagnetic wave.

8. The waveguide packaging device of a single-row carrier photodiode according to claim 1, characterized in that: The circuit board adopts Rogers 5880 substrate.

9. The waveguide packaging device of a single-row carrier photodiode according to claim 1, characterized in that: The material of the metal packaging shell is copper plated with gold.

10. A radio frequency device based on a single-line carrier photodiode, characterized in that: A waveguide packaging device comprising a single-row carrier photodiode and the single-row carrier photodiode according to any one of claims 1 to 9.

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