42results about How to "Improve package integration" patented technology

The invention provides an embedded-type real-time intelligent traffic monitoring system based on video streaming technique, which mainly comprises two DSP modules, an ARM module and an FPGA logic control module. The two DSP modules perform the high-speed real-time processing of video images. The ARM module controls the operating mode of the two DSP modules and transmits an image processing result to the peripheral equipment via a peripheral interface. The FPGA logic control module supports the coordination control of the system and the cache storage of the images. The embedded-type real-time intelligent traffic monitoring system integrates the functions of the DSP, the ARM and the FPGA, has the advantages of high computing capacity, various interfaces and flexible communication mode, is applicable to various complex traffic conditions, and has wide application range.

Provided are a chip cutting method and a chip packaging method. The chip packaging method includes the steps that at least two chip structures are provided, wherein each chip structure comprises a chip and an insulating layer at least located on the side wall of the chip, the side wall of the insulating layer of each chip structure is provided with a conductive groove, the chip structures are stacked, and the conductive grooves of the different chip structures correspond to each other in position; the insides of the conductive grooves are filled with conductive adhesives, wherein circuits in the different chip structures are electrically connected through the conductive adhesives. Due to the fact that the conductive grooves are formed in the side walls of the insulating layers, the conductive adhesives formed in the conductive grooves cannot be in direct contact with the chips, and short-circuit phenomena cannot occur; due to the fact that the conductive grooves and contact welding plates are connected through metal interconnection layers on the surfaces of the insulating layers, the insulating layers cannot influence layout design of other metal interconnection structures in the chips, the chip area occupied by the metal interconnection structures can be saved, and the component integration degree of the chips can be beneficially improved.

The invention relates to the technical field of gas detection, and provides an MEMS gas sensor and a manufacturing method thereof. The MEMS gas sensor comprises: a monocrystalline silicon substrate; an upper silicon nitride layer and an upper silicon oxide layer which are superposed on the upper surface of the monocrystalline silicon substrate from bottom to top; a lower silicon nitride layer placed on the lower surface of the monocrystalline silicon substrate; a heating electrode placed on the silicon oxide layer; an insulating layer placed on the heating electrode; a measurement electrode placed on the insulating layer; a gas-sensitive layer placed on the measurement electrode and electrically connected with the measurement electrode; and a heat insulation chamber positioned under the upper silicon nitride layer and formed by etching the lower silicon nitride layer and the monocrystalline silicon substrate. The gas sensor has the advantages of high precision, light weight, small dimension, low power dissipation, high usefulness, low cost, and realization of large-batch production.

Provided are a chip structure and a chip packaging structure. The chip packaging structure comprises at least two chip structures and conductive adhesives located in conductive grooves, wherein the side walls of the chip structures are provided with the conductive grooves, the chip structures are stacked, the conductive grooves of the stacked chip structures correspond in position, and circuits in the stacked chip structures are electrically connected through the conductive adhesives. Due to the fact that the conductive grooves are formed in the side walls of insulating layers, the conductive adhesives formed in the conductive grooves later cannot be in direct contact with chips, and short-circuit phenomena cannot occur; due to the fact that the conductive grooves and contact welding plates are connected through metal interconnection layers on the surfaces of the insulating layers, the insulating layers cannot influence layout design of other metal interconnection structures in the chips, the practice that extra metal interconnection structures are designed due to positions of the contact welding plates is needless, the chip area occupied by the metal interconnection structures can be saved, and the component integration degree of the chips can be beneficially improved.

The invention relates to the technical field of integrated circuits, and discloses an embedded substrate. The embedded substrate is used for solving a problem that an embedded substrate limits the further improvement of the packaging integration degree in the prior art because all chips of the embedded substrate occupies a bigger space and the reliability of products is lower. The embedded substrate comprises a substrate, wherein two sides of the substrate in the thickness direction are respectively provided with at least one first cavity and at least two first electronic devices, and each first electronic device is corresponding to one first cavity; packaging layers which are respectively disposed in each first cavity and respectively wrap the first electronic devices in the first cavities, and is provided with a plurality of first connection holes, wherein each first connection hole is corresponding to one pin of one first electronic device, and is connected with a corresponding pin;and a conductive circuit layer, wherein a part of the conductive circuit layer is disposed in the first connection holes to be connected with the pins corresponding to the first connection holes.

The invention discloses an integrated preparation method for an LED fluorescent powder coating, which belongs to the photoelectric technical field. The method comprises the following steps: (1), preparing fluorescent powder and sensitive colloid dispersion; (2), spinning the fluorescent powder to form a fluorescent powder-sensitive colloid dispersion coating; (3), obtaining fluorescent powder-sensitive colloid dispersion coating patterns in required shapes and thickness through exposure and development; (4), displacing a fluorescent powder dispersion medium; and (5), removing a coating residue on the surface of an electrode, and showing a chip pattern. The invention provides a wafer level packaging fluorescent powder coating slurry method and a realization method (cleaning and exposing) of the chip electrode pattern, and the problem of applying the fluorescent powder coating technology into LED chip integrated package to realize the separation of the electrode pattern and the fluorescent powder coating in the prior art is solved.

The invention discloses a 3D system integration structure, comprising: an adapter board; A first silicon through hole arranged on the front face of the adapter board; A second silicon through hole arranged on the front face of the adapter board; A cavity arranged on the back surface of the adapter plate; A first relayout wiring layer and a pad arranged on a bottom surface of the cavity, the firstrelayout wiring layer and the pad being electrically connected with the first silicon via; A first chip disposed within the cavity, the first chip electrically connected to the first relayout wiring layer and the pad; A plastic filling layer arranged around the first chip and having a gap between the bottom and the adapter board; A second chip arranged on the back surface of the adapter board, thesecond chip being electrically connected to the second silicon through hole; A second relayout wiring layer disposed on a front face of the adapter board; And a welding structure provided on the front face of the adapter plate, the welding structure being electrically connected to the second relayout wiring layer.

The present invention provides a multi-chip-stacked package, and includes: a substrate set with several metal terminals and a multi-chip-stacked package are provided; the multi-chip-stacked package is fixed on substrate, of which active surface of each chip is set with several welding pads, and each chip is set with insulating layer on its back; a clinging layer combines the active surface of each chip and the insulating layer set on the back of the other chip to form stack structure; several metal wires joins the several welding pads on the several chips and the several metal terminals on the substrate.

The invention relates to a stacked chip packaging structure, comprising a wire rack, wherein, the wire rack comprises a plurality of internal pins and a plurality of external pins; the internal pins comprise a plurality of first parallel internal pin clusters and second parallel internal pin clusters, the tail ends of the first internal pin clusters and the second internal pin clusters are arranged oppositely with an interval; the tail ends of the first internal pin clusters and the tail ends of the second internal pin clusters have different vertical height due to the sink-arranged structure of the first internal pin clusters; the multi-chip stacked structure is connected fixedly with the first internal pin clusters; the metal welding points on the edge of the same side of the multi-chip stacking structure are connected electrically with the first internal pin clusters and the second internal pin clusters via a plurality of metal wires; the multi-chip stacked structure and the internal pins are packaged with sealant; and the packaging structure is provided with a top surface and a bottom surface.

The invention discloses a flexible packaging structure which comprises a flexible packaging substrate, a first hard packaging body and at least one second hard packaging body; the first hard packagingbody comprises at least one first chip and a hard packaging material for wrapping the at least one first chip; the second hard packaging body comprises at least one third chip and a hard packaging material for wrapping the at least one third chip; and the first hard packaging body and the at least one second hard packaging body are arranged in the upper surface of the flexible packaging substrate. A flexible packaging material is further included, and packages the first and second hard packaging bodies at least. The invention also discloses a preparation method of the flexible packaging structure and wearable equipment.

The invention discloses a square flat pin-free packaging structure, a preparation method thereof and an electronic device. The square flat pin-free packaging structure comprises a frame, a chip, leadsand a plastic packaging body, wherein the frame is provided with a first side and a second side which are opposite to each other, the first side is provided with a chip base and a plurality of pin setting areas arranged at the periphery of the chip base in a surrounding manner, the plurality of pin setting areas are arranged in an inner and outer ring manner, and each pin setting area is providedwith a plurality of pins distributed along the circumferential direction of the pin setting area; wherein the chip is arranged on the chip base; the pin is correspondingly connected with an externalterminal of the chip and the plurality of pins; the plastic package body is arranged on the frame and seals the pins, the chip and the pins at the same time. According to the invention, the pluralityof pin groups arranged in the inner and outer rings are arranged around the chip, so that the pin density of the square flat pin-free packaging structure is improved, and the improvement of the packaging integration level is facilitated.

The invention provides a substrate embedding type three-dimensional system-level packaging method and structure; the method comprises the following steps that height information or installation requirement information of a to-be-embedded device is acquired; according to the height information or the installation requirement information, it is determined that the to-be-embedded device is embedded through a core layer process and is made to form a first substrate, or a second substrate is manufactured by adopting a substrate lamination process, and then the to-be-embedded device is attached to and mounted on the second substrate through a surface attaching process; at least two first substrates, or at least two second substrates or the first substrate and the second substrate are laminated to form a packaging substrate by adopting a substrate lamination process; a through hole is manufactured in the packaging substrate, and then green oil covering, and window opening are carried out to form the substrate embedding type three-dimensional packaging structure. According to the method, most of the space can be effectively saved on the surface, the packaging integration level is improved,and miniaturization is realized; and a natural electromagnetic shielding and isolation structure can be formed in the packaging structure, so that the electromagnetic interference performance of thesystem is effectively improved.

The invention belongs to the technical field of semiconductor manufacturing, and discloses a full-inorganic ultraviolet LED wafer-level package method. The full-inorganic ultraviolet LED wafer-level package method comprises the steps of firstly, forming a plurality of glass paste rings on a glass cover plate by a printing or 3D printing technology, and obtaining a plurality of glass cavity structures by low-temperature sintering; secondly, surface-mounting a plurality of ultraviolet LED chips onto a cooling substrate; thirdly, achieving reliable bonding of the glass cavities in the glass coverplate and the cooling substrate by inorganic paste or a metal welding material; and finally, cutting to obtain a full-inorganic ultraviolet LED package product. The invention also discloses a corresponding ultraviolet LED package structure. By the full-inorganic ultraviolet LED wafer-level package method, the problems of ultraviolet aging and failure of an organic package material are effectivelyprevented, the long-term reliability of an ultraviolet LED device is improved, the ultraviolet LED package integration is improved, and the package cost is reduced.

The invention belongs to the related technical field of microelectronic packaging, and discloses an airtight packaging structure of an integrated thermoelectric refrigerator and a preparation method thereof. The airtight packaging structure of the integrated thermoelectric refrigerator comprises a packaging cover plate, a chip, the thermoelectric refrigerator and a three-dimensional ceramic substrate, a cavity is formed in the three-dimensional ceramic substrate, the chip is arranged in the cavity, and the packaging cover plate is in airtight connection with the three-dimensional ceramic substrate so as to package the chip in the cavity; the three-dimensional ceramic substrate is connected with the thermoelectric refrigerator, and the three-dimensional ceramic substrate and the thermoelectric refrigerator share one ceramic substrate, so that the heat dissipation refrigerator and the three-dimensional ceramic substrate are combined to form an airtight packaging structure. According to the airtight packaging structure, the three-dimensional DPC ceramic substrate is used, and interconnection between the inside and the outside of the cavity is realized by utilizing the cavity structureand the vertical interconnection characteristic of the three-dimensional DPC ceramic substrate; the three-dimensional DPC ceramic substrate is used as a ceramic substrate of the TEC, that is, the thermoelectric refrigerator and the three-dimensional ceramic substrate share the ceramic substrate, so that one layer of ceramic substrate and one layer of welding interface are reduced, the heat dissipation capability of the device is improved, the thermal resistance can be reduced, and the packaging integration degree is improved.

The invention provides a laser radar chip packaging structure and method, and the structure comprises an optical chip which is disposed in a first packaging body, wherein the first packaging body is provided with a lens shape; and an electric chip which is arranged in a second packaging body, wherein the second packaging body is internally provided with a first electric interconnection structure, the first electric interconnection structure leads out the electric property of the electric chip, and the first packaging body and the second packaging body are arranged through a lamination layer.

The invention provides a flow channel structure for chip cooling and a manufacturing method thereof, and the structure comprises at least one first fin which is disposed on a first side wall surface of a flow channel and extends along a first direction so as to guide a cooling liquid in the flow channel along the first direction; the first fins are arranged on the first side wall face of the flow channel, the second fins are arranged on the second side wall face of the flow channel, the second fins extend in the second direction so as to be used for guiding cooling liquid in the flow channel in the second direction, and the first fins and the second fins intersect with each other and communicate with each other at the intersection.

The invention discloses an active light-emitting film, an active light-emitting signboard and a preparation method thereof, and aims to solve the technical problems that an existing active light-emitting signboard is complex in structure and difficult to manufacture, and resources cannot be reasonably utilized. The active light-emitting film comprises a substrate, an LED array, a scattering layer,fluorescent powder glue and a retro-reflection layer, the LED array is arranged on the substrate, the scattering layer is fixed above the LED array, the space between the substrate and the scatteringlayer is filled with the fluorescent powder glue, and the retro-reflection layer is arranged on the side face, back on to the LED array, of the scattering layer; and the active light-emitting sign comprises a support, a signboard panel, a bottom film and an active light-emitting film, the signboard panel is fixedly connected with the support, the bottom film is adhered to the front surface of thesignboard panel, and the active light-emitting film is adhered to the bottom film. The active light-emitting film is directly pasted on an existing signboard, the size is reduced, manufacturing is convenient, and brightness is uniform.

The invention provides a 3D chip packaging structure and a preparation method thereof. The 3D chip packaging structure comprises: a rewiring layer; a chip which is bonded on the upper surface of the rewiring layer in a flip-chip manner; a first electric connection structure which is located on the upper surface of the rewiring layer; a first plastic package layer which is positioned on the upper surface of the rewiring layer and is used for carrying out plastic package on the chip and the first electric connection structure; a second electric connection structure which is located on the uppersurface of the first plastic package layer; a second plastic package layer which is located on the upper surface of the first plastic package layer; a third electric connection structure which is located on the upper surface of the second plastic package layer; a third plastic package layer which is positioned on the upper surface of the second plastic package layer and is used for carrying out plastic package on the third electric connection structure; a top metal wire layer which is positioned on the upper surface of the third plastic package layer; and a solder ball bump located on the lower surface of the redistribution layer. According to the 3D chip packaging structure, 3D packaging of the chip is achieved, the cost is low, the packaging integration degree is high, and the requirement for the miniaturization development trend can be met.

The invention relates to a resistive touch screen protecting circuit which is arranged on a driving line between a resistive touch screen control board and a resistive touch screen and is used for preventing instantaneous high voltage on a resistive screen driving line. The protecting circuit comprises a transient voltage inhibition diode, a first resistor and a capacitor. The signal output end of the resistive touch screen control board, the first resistor and the resistive touch screen signal input end are successively connected. The anode of the transient voltage inhibition diode is grounded, and the cathode is connected between the first resistor and the signal output end of the resistive touch screen control board. One end of the capacitor is grounded, and the other end is connected between the first resistor and the signal input end of the resistive touch screen. Compared with prior art, the resistive touch screen protecting circuit has advantages of high integration degree, small size, high convenience and high flexibility in use, effective ESD overvoltage protection, etc.