Optical communication interconnection txv 3D integrated packaging and packaging method

Abstract

The invention discloses an optical communication interconnection through-X-via (TXV) 3D integrated package and a packaging method, and solves the problems that a process is complicated, the integration level is low and the working frequency is limited in the prior art. The method comprises the following steps of a, manufacturing a chip with a through hole and a chip without a through hole; b, depositing a metal layer on a substrate such as glass or silicon, and patterning to obtain an optical path cover plate; c, aligning and bonding the optical path cover plate, the chip with the through hole and the chip without the through hole to complete 3D integrated package. By the method, through holes with a high aspect ratio can be obtained, procedures of thinning the chips, depositing a through hole dielectric layer and a seed layer, electroplating metal for filling holes and the like are not required, the integration level of the 3D integrated package can be greatly improved, the packaging cost is reduced, the problems of parasitic inductance, capacitance and signal coupling are solved and the working frequency of an electronic system can be greatly improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to an optical communication interconnection TXV 3D integrated package and a package method. Background technique [0002] With the development of microelectronic integrated circuit technology and people's requirements for electronic products in the direction of miniaturization and multi-function, integrated circuits and electronic systems require smaller and smaller volumes, higher integration and stronger functions. However, when circuit integration and packaging develop in a higher direction according to Moore's Law, its power consumption, heat dissipation, and cost have become serious constraints. Therefore, various new technologies, new materials, and new designs have been proposed to solve this problem. Among them, through-silicon via (TSV) 3D and through-glass via (TGV) 3D integrated packaging technologies are considered to be the most promising technical ...

AI Technical Summary

Problems solved by technology

The through hole process in the current 3D integrated package is relatively complicated, and is limited by the metal hole filling process. The ratio of the depth to diameter of the through hole cannot be too high, so the problem is that the substrate should not be too thick and the hole should not be too small. , requires a thinning process, which affects the mechanical strength and integration

Even if some special technology can be used to achieve a relatively high aspect ratio of metal vias, the slender metal vias will also bring parasitic parameters such as inductance, which limits the increase in the operating frequency of electronic systems

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