Integrated chamber for wafer coating and etching

Abstract

The present application discloses an integrated chamber for wafer coating and etching, which includes a reaction chamber, a stage, a coil, a target, and a shutter. The stage is disposed in the reaction chamber and is used to carry a wafer. The coil is disposed in the reaction chamber and is above the stage. The target is disposed in the reaction chamber and is above the coil. The shutter has a shielding state and an open state. The integrated chamber for wafer coating and etching provided by the present application realizes wafer coating or etching by hierarchically arranging the coil and the target and selectively energizing according to needs. It can be used for two purposes with one chamber, which is beneficial to reducing the floor area of the equipment, improving the practicability of the equipment, and reducing the use cost. By providing a shutter with a shielding state and an open state, during the process of wafer etching, the target is protected by the shutter, and it can be avoided that the target adheres to pollutants due to being exposed in the reaction area, thereby ensuring the reliability of the two processes.

Description

Technical Field

[0001] This application relates to the technical field of wafer preparation equipment, and particularly to a wafer coating and etching integrated chamber. Background Art

[0002] Physical vapor deposition (PVD) technology refers to a technology that, under vacuum conditions, uses physical methods to vaporize the material source (solid or liquid) on the surface into gaseous atoms or molecules, or partially ionize them into ions, and through a low-pressure gas (or plasma) process, deposits a thin film with a certain special function on the wafer surface. Physical vapor deposition is one of the main surface treatment technologies for wafers.

[0003] Etching is a very important step in semiconductor manufacturing processes, microelectronic IC manufacturing processes, and micro-nano manufacturing processes. It is a process of selectively removing unnecessary materials on the wafer surface by chemical or physical methods, and its basic goal is to correctly replicate the mask pattern on the wafer coated with photoresist.

[0004] In the prior art, it is often necessary to separately arrange a set of etching equipment and a set of coating equipment to meet the wafer preparation needs. However, in medium and small production lines, the conventional double-chamber design has problems such as large equipment footprint, unstable utilization rate, and high usage costs. Summary of the Invention

[0005] The purpose of this application is to overcome the deficiencies in the prior art and provide a wafer coating and etching integrated chamber.

[0006] To achieve the above technical objectives, this application provides a wafer coating and etching integrated chamber, including: a reaction chamber for providing an operating space for the wafer; a carrier stage disposed in the reaction chamber for carrying the wafer; a coil disposed in the reaction chamber and above the carrier stage; a target disposed in the reaction chamber and above the coil; a shutter having a blocking state and an open state; when the shutter is in the blocking state, the shutter blocks the target; when the shutter is in the open state, the shutter is away from the target; when performing wafer etching, the shutter is in the blocking state, the coil is energized to ionize the reaction gas to form a plasma, and the plasma bombards downward to etch the wafer surface; when performing wafer coating, the shutter is in the open state, the target is energized to ionize the reaction gas to form a plasma, the electrons bombard the target upward to generate metal atoms, and the metal atoms deposit downward to coat the wafer surface.

[0007] Furthermore, the wafer coating and etching integrated chamber further includes: an auxiliary side chamber disposed on one side of the reaction chamber and communicating with the reaction chamber; a blocking driving mechanism for driving the shutter to approach or move away from the target; when the shutter is in the open state, the auxiliary side chamber can accommodate the shutter.

[0008] Furthermore, a cleaning mechanism is provided inside the auxiliary side cavity; when the auxiliary side cavity houses the shielding plate, the cleaning mechanism can clean the surface of the shielding plate and remove the contaminants adhering to the shielding plate.

[0009] Furthermore, an upper inner cylinder is also provided inside the reaction cavity, which is arranged below the target, and the target is exposed inside the upper inner cylinder; a lower inner cylinder is arranged below the upper inner cylinder, a coil is arranged inside the lower inner cylinder, and the carrier stage is exposed inside the lower inner cylinder; when the shielding plate is in the shielding state, the shielding plate is located between the upper inner cylinder and the lower inner cylinder.

[0010] Furthermore, a hanging step is provided on the inner wall of the reaction cavity, and a hanging skirt is provided on the outer wall of the lower inner cylinder. The lower inner cylinder can be hung on the hanging step through the hanging skirt; when the lower inner cylinder is hung on the hanging step, there is a gap between the upper inner cylinder and the lower inner cylinder, and the shielding plate can be inserted into the gap to shield the target; a lifting plate is provided on the outer periphery of the carrier stage; when performing wafer coating, the carrier stage rises, and the lifting plate can contact and lift the lower inner cylinder, thereby reducing the gap.

[0011] Furthermore, the wafer coating and etching integrated cavity further includes: a first gas inlet structure arranged at the lower part of the reaction cavity; a second gas inlet structure arranged at the upper part of the reaction cavity; an air outlet structure arranged at the bottom of the reaction cavity; when performing wafer etching, the shielding plate is in the shielding state, the carrier stage rises and carries the wafer into the lower inner cylinder, and the reaction gas enters the reaction cavity through the first gas inlet structure and enters the lower inner cylinder along the movement path of the carrier stage; when performing wafer coating, the shielding plate is in the open state, the upper inner cylinder communicates with the lower inner cylinder, the carrier stage rises and carries the wafer into the lower inner cylinder, the lifting plate lifts the lower inner cylinder, and the reaction gas enters the upper inner cylinder and the lower inner cylinder through the second gas inlet structure; air outlet holes are provided on the cylinder wall of the lower inner cylinder, and the reaction gas can flow to the air outlet structure through the air outlet holes, and the air outlet structure can discharge the reaction gas out of the reaction cavity.

[0012] Furthermore, an annular channel is provided between the reaction cavity and the upper inner cylinder, and the annular channel communicates the second gas inlet structure and the upper inner cylinder; when performing wafer coating, the reaction gas enters the annular channel through the second gas inlet structure and then enters the upper inner cylinder through the annular channel.

[0013] Furthermore, a shielding member is provided at the bottom end of the lower inner cylinder away from the upper inner cylinder, and the main body of the shielding member is arranged in a circular ring shape; when performing wafer etching or coating, the carrier stage rises, the carrier stage can contact the shielding member, and the wafer on the carrier stage can be exposed through the central circular hole of the shielding member; the shielding member can prevent contaminants from depositing downward.

[0014] Furthermore, both the coil and the target are made of titanium.

[0015] Further, the coil has an etching working state, a coating working state, and a compensation state; when the coil is in the etching working state, the shutter is in the blocking state, the coil is energized, the reactive gas is ionized to form a plasma, and the plasma bombards downward to etch the surface of the wafer; when the coil is in the coating working state, the shutter is in the open state, both the coil and the target are energized, the coil can enhance the plasma concentration in the reaction chamber and ionize metal atoms to facilitate the directional deposition of metal atoms; when the coil is in the compensation state, the shutter is in the open state, the target is energized, the coil is not energized, and the metal atoms deposit downward and can fall onto the coil, thereby compensating the coil and increasing the service life of the coil.

[0016] The present application provides a wafer coating and etching integrated chamber, including a reaction chamber, a stage, a coil, a target, and a shutter. The stage is arranged in the reaction chamber for carrying the wafer, the coil is arranged in the reaction chamber and above the stage, the target is arranged in the reaction chamber and above the coil. The shutter has a blocking state and an open state. When the shutter is in the blocking state, it can separate the target from the reaction area. When the shutter is in the open state, the target can perform normal coating operations; the wafer coating and etching integrated chamber provided by the present application realizes wafer coating or etching by selectively energizing according to needs through the hierarchical arrangement of the coil and the target. It has two functions in one chamber, which is beneficial to reducing the floor area of the equipment, improving the practicability of the equipment to adapt to the process requirements of multiple production lines, and reducing the use cost; by setting a shutter with a blocking state and an open state, during the process of wafer etching, the shutter is used to protect the target and can avoid the target from adhering to contaminants due to exposure in the reaction area, thereby ensuring the reliability of the two processes. Description of the Drawings

[0017] Figure 1 is a schematic structural diagram of a wafer coating and etching integrated chamber provided by the present application;

[0018] Figure 2 is a schematic structural diagram of another wafer coating and etching integrated chamber provided by the present application;

[0019] Figure 3 is Figure 2 an enlarged view of the structure within the circle in

[0020] Figure 4 is Figure 2 a partial schematic structural diagram of the wafer coating and etching integrated chamber shown in

[0021] Figure 5 is Figure 4 an enlarged view of the structure within the circle in

[0022] Figure 6 is Figure 2Another partial structural schematic diagram of the wafer coating and etching integrated cavity shown;

[0023] Figure 7 is Figure 6 The enlarged view of the structure within the circle in Specific implementation manners

[0024] To make the above objects, features, and advantages of the present application more obvious and understandable, the specific implementation manners of the present application will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description in order to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0025] The present application provides a wafer coating and etching integrated cavity, including: a reaction chamber 1 for providing an operation space for the wafer; a carrier 2 disposed in the reaction chamber 1 for carrying the wafer; a coil 3 disposed in the reaction chamber 1 and above the carrier 2; a target 4 disposed in the reaction chamber 1 and above the coil 3; a shutter 11, which has a shielding state and an open state; when the shutter 11 is in the shielding state, the shutter 11 shields the target 4; when the shutter 11 is in the open state, the shutter 11 is away from the target 4; when performing wafer etching, the shutter 11 is in the shielding state, the coil 3 is energized to ionize the reaction gas to form a plasma, and the plasma bombards downward to etch the surface of the wafer; when performing wafer coating, the shutter 11 is in the open state, the target 4 is energized to ionize the reaction gas to form a plasma, the electrons bombard the target upward to generate metal atoms, and the metal atoms deposit downward to coat the surface of the wafer.

[0026] Specifically, reference can be made to Figure 1 , in the illustrated embodiment, the carrier 2 is disposed at the bottom of the reaction chamber 1, the target 4 is disposed at the top of the reaction chamber 1, and the coil 3 is disposed in the reaction chamber 1 between the carrier 2 and the target 4. When performing wafer etching, the coil 3 is energized and the target 4 is not energized. The coil 3 generates arc discharge and can ionize some of the reaction gas for etching, thereby generating a plasma in the reaction chamber 1, and the plasma can etch the wafer. During the wafer etching process, oxides, impurities and other pollutants will be generated. Without shielding, when the target 4 is directly exposed in the reaction area, the pollutants will sputter and adhere to the target 4, thus affecting the use of the target 4 and the cleanliness of the reaction area.

[0027] Therefore, the present application provides the shutter 11 to protect the target 4. During the etching process, the shutter 11 is kept in the shielding state, and the pollutants generated by etching will not contaminate the target 4. Before coating, the shutter 11 is in the open state, and the target 4 faces the carrier 2 and can operate normally.

[0028] The integrated chamber for wafer coating and etching provided by the present application realizes wafer coating or etching by selectively energizing the hierarchically arranged coil 3 and target 4 as needed. It can be used for two purposes with one chamber, which is beneficial to reducing the floor space of the equipment, improving the practicability of the equipment to facilitate the equipment to adapt to the process requirements of multiple production lines, and reducing the use cost. By providing a shutter 11 with a shielding state and an open state, during the process of wafer etching, the shutter 11 is used to protect the target 4 and can prevent the target 4 from adhering to contaminants due to exposure in the reaction area, thus ensuring the reliability of the two processes.

[0029] Among them, the shutter 11 can be set as a telescopic structure; when the shutter 11 extends, it enters the shielding state, and when it retracts, it enters the open state. Or, the shutter 11 can be set as a hinge flipping structure; when the plates of the shutter 11 flip away from each other, the shutter 11 enters the open state, and when the plates of the shutter 11 flip close to each other, the shutter 11 enters the shielding state. Or, the shutter 11 can be set in a movable form; when the shutter 11 moves away from the target 4, the shutter 11 enters the open state, and when the shutter 11 moves close to the target 4, the shutter 11 enters the shielding state.

[0030] The present application does not limit the specific configuration of the shutter 11, as long as it can meet the requirements of shielding and protecting the target 4 and open operation.

[0031] In addition, the shutter 11 can be attached to the target 4, can cover the target 4, or can be arranged between the target 4 and the coil 3 to block the upward sputtering of contaminants through the separation reaction chamber 1.

[0032] The present application also does not limit the specific position of the function of the shutter 11.

[0033] In one embodiment, the integrated chamber for wafer coating and etching provided by the present application further includes: an auxiliary side chamber 5, which is arranged on one side of the reaction chamber 1 and communicates with the reaction chamber 1; a shielding driving mechanism 12, which is used to drive the shutter 11 to approach or move away from the target 4; when the shutter 11 is in the open state, the auxiliary side chamber 5 can accommodate the shutter 11.

[0034] Among them, the shielding driving mechanism 12 can adopt a cylinder, an electric cylinder, etc. Setting the fixed end of the shielding driving mechanism 12 outside the auxiliary side chamber 5 can prevent the fixed end from being eroded by the reaction gas, contaminants, etc. in the chamber. The movable end of the shielding driving mechanism 12 is connected to the shutter 11; during wafer etching, the shielding driving mechanism 12 works to drive the shutter 11 to move towards the target 4, and the shutter 11 enters the reaction chamber 1 and enters the shielding state; during wafer coating, the shielding driving mechanism 12 works in the reverse direction to drive the shutter 11 to move away from the target 4, and the shutter 11 returns to the auxiliary side chamber 5 and enters the open state.

[0035] Optionally, a cleaning mechanism is provided in the auxiliary side cavity 5; when the auxiliary side cavity 5 houses the shielding plate 11, the cleaning mechanism can clean the surface of the shielding plate 11 and remove the contaminants adhering to the shielding plate 11.

[0036] Cleaning the shielding plate 11 can not only extend the service life of the shielding plate 11, but also prevent the contaminants on the shielding plate 11 from reversely contaminating the reaction area during the wafer etching process.

[0037] Among them, the cleaning mechanism can be a physical cleaning structure such as a brush or a scraping blade. When the shielding plate 11 enters the open state, the cleaning mechanism can act on the shielding plate 11 in the auxiliary side cavity 5, especially the side of the shielding plate 11 facing the stage 2, so as to sweep away the contaminants adhering to the shielding plate 11.

[0038] Alternatively, the cleaning mechanism can be a structure capable of purging gas. When the shielding plate 11 enters the open state, the cleaning mechanism can spray and sweep a cleaning gas (such as an inert gas such as nitrogen) onto the shielding plate 11, especially the side of the shielding plate 11 facing the stage 2, and use the gas to blow away the contaminants adhering to the shielding plate 11.

[0039] The present application does not limit the specific configuration of the cleaning mechanism.

[0040] To prevent the environment in the auxiliary side cavity 5 from interfering with the working environment in the reaction chamber 1 when the cleaning mechanism is working, a closing door is provided between the auxiliary side cavity 5 and the reaction chamber 1. When the closing door is closed, the auxiliary side cavity 5 and the reaction chamber 1 do not interfere with each other. When the closing door is opened, the shielding plate 11 can enter the shielding state.

[0041] Furthermore, to help the auxiliary side cavity 5 restore the same gas environment as the reaction chamber 1 and prevent the gas environment in the auxiliary side cavity 5 from affecting the working environment in the reaction chamber 1 when the closing door is opened, a gas supply structure and a gas extraction structure are also provided in the auxiliary side cavity 5. The gas supply structure can supply the same gas as in the reaction chamber 1 into the auxiliary side cavity 5, and the gas extraction structure can cooperate with the gas supply structure to adjust the air pressure in the auxiliary side cavity 5.

[0042] In order to better protect the target 4, in one embodiment, an upper inner cylinder 13 is further provided in the reaction chamber 1. The upper inner cylinder 13 is provided below the target 4, and the target 4 is exposed in the upper inner cylinder 13. A lower inner cylinder 14 is provided below the upper inner cylinder 13. The coil 3 is provided in the lower inner cylinder 14, and the stage 2 is exposed in the lower inner cylinder 14. When the shielding plate 11 is in the shielding state, the shielding plate 11 is located between the upper inner cylinder 13 and the lower inner cylinder 14.

[0043] Specifically, reference can be made to Figure 2, in the illustrated embodiment, an upper inner cylinder 13 is provided at the top of the cavity of the reaction chamber 1, the target 4 is disposed on the upper inner cylinder 13, and the bottom surface of the target 4 is exposed in the upper inner cylinder 13 and can be bombarded by plasma. A lower inner cylinder 14 is disposed below the upper inner cylinder 13, the coil 3 is disposed in the lower inner cylinder 14, and the susceptor 2 is disposed below the lower inner cylinder 14. During wafer operation, the susceptor 2 can carry the wafer up and enter the lower inner cylinder 14. The shutter 11 can be inserted between the upper inner cylinder 13 and the lower inner cylinder 14, so that the shutter 11 completely covers the bottom open end of the upper inner cylinder 13 or the top open end of the lower inner cylinder 14, thereby preventing contaminants from entering the upper inner cylinder 13 and contaminating the target 4.

[0044] Controlling the reaction area of the wafer within the lower inner cylinder 14, or within the upper inner cylinder 13 and the lower inner cylinder 14, can also prevent contaminants from adhering to the inner wall of the reaction chamber 1, thereby reducing the frequency, difficulty and cost of operations such as equipment cleaning and part replacement.

[0045] To facilitate the insertion of the shutter 11 between the upper inner cylinder 13 and the lower inner cylinder 14, in one embodiment, the upper inner cylinder 13 and the lower inner cylinder 14 are spaced apart, and a curtain is arranged at the spacing. The curtain can be made of a flexible material (such as a film, a cloth piece, etc.) or can be set in a form that can be flipped; when the shielding driving mechanism 12 operates to drive the shutter 11 to move towards the target 4, the shutter 11 can push aside the curtain and be inserted between the upper inner cylinder 13 and the lower inner cylinder 14.

[0046] In another embodiment, at least one of the upper inner cylinder 13 and the lower inner cylinder 14 can be lifted and lowered; when the upper inner cylinder 13 and the lower inner cylinder 14 move away from each other, the shutter 11 can be inserted between them; when the upper inner cylinder 13 and the lower inner cylinder 14 move closer to each other, the sealing of the reaction area can be ensured and contaminants can be prevented from spilling out.

[0047] The present application does not limit the installation manner of the upper inner cylinder 13 and the lower inner cylinder 14, as long as the shutter 11 can be inserted between them to isolate the target 4 from the reaction area.

[0048] In a specific embodiment, a hanging step 1a is provided on the inner wall of the reaction chamber 1, a hanging skirt 14a is provided on the outer wall of the lower inner cylinder 14, and the lower inner cylinder 14 can be hung on the hanging step 1a through the hanging skirt 14a; when the lower inner cylinder 14 is hung on the hanging step 1a, there is a gap between the upper inner cylinder 13 and the lower inner cylinder 14, and the shutter 11 can be inserted into the gap to shield the target 4; a lifting plate 2a is provided on the outer periphery of the susceptor 2; during wafer coating, the susceptor 2 rises, and the lifting plate 2a can contact and lift the lower inner cylinder 14, thereby reducing the gap.

[0049] Specifically, reference can be made to Figure 2 and Figure 3, in the illustrated embodiment, the auxiliary side chamber 5 is provided on the left side of the reaction chamber 1. A through movable opening is provided on the left wall of the reaction chamber 1, and the movable opening communicates with the auxiliary side chamber 5. The shutter 11 can enter and exit the reaction chamber 1 through the movable opening. Inside the reaction chamber 1 and below the movable opening, there is a ring of hanging steps 1a. On the upper outer wall of the lower inner cylinder 14, there is a ring of hanging skirts 14a. The outer diameter of the lower inner cylinder 14 is slightly smaller than the inner diameter of the ring formed by the hanging steps 1a. The outer diameter of the hanging skirts 14a is larger than the inner diameter of the ring formed by the hanging steps 1a and smaller than the inner diameter of the reaction chamber 1. Therefore, the lower inner cylinder 14 can be hung inside the reaction chamber 1 through the hanging skirts 14a and the hanging steps 1a and suspended above the carrier 2.

[0050] Continue to refer to Figure 2 , the carrier 2 includes a table portion and an extension portion. The table portion is provided in a disc shape, is arranged inside the reaction chamber 1 and is used to support the wafer. The extension portion is provided below the table portion and extends outside the reaction chamber 1. The extension portion is used to connect with a lifting drive mechanism 7 (such as an electric cylinder, a linear module, etc.). Referring to Figure 4 , on the lower outer wall of the table portion, there is a ring of lifting plates 2a. The outer diameter of the lifting plates 2a is larger than the inner diameter of the lower inner cylinder 14.

[0051] When coating the wafer, the shutter 11 returns to the auxiliary side chamber 5 and enters the open state, and the gap between the upper inner cylinder 13 and the lower inner cylinder 14 becomes vacant. After the carrier 2 receives the wafer, the lifting drive mechanism 7 drives the carrier 2 to rise. The carrier 2 carries the wafer into the lower inner cylinder 14. The lifting plates 2a rise with the carrier 2 and continuously approach until they contact the bottom end of the lower inner cylinder 14. The carrier 2 continues to rise, and the lifting plates 2a can lift the lower inner cylinder 14 so that the lower inner cylinder 14 approaches the upper inner cylinder 13, thereby reducing or even eliminating the gap.

[0052] The lifting plates 2a can also cover the bottom open end of the lower inner cylinder 14, further preventing the pollutants generated during the wafer operation from depositing downward.

[0053] Optionally, there are auxiliary steps on the lifting plates 2a. Specifically, refer to Figure 4 , the auxiliary steps can increase the thickness of the lifting plates 2a to ensure that the lifting plates 2a contact and lift the lower inner cylinder 14. When the lower inner cylinder 14 is lifted by the auxiliary steps, there is still a gap between the lifting plates 2a and the lower inner cylinder 14 to facilitate the flow of reaction gas.

[0054] Optionally, the outer diameter of the upper inner cylinder 13 is smaller than the inner diameter of the lower inner cylinder 14, or the inner diameter of the upper inner cylinder 13 is larger than the outer diameter of the lower inner cylinder 14.

[0055] For example, Figure 2 and Figure 3In the illustrated embodiment, the outer diameter of the upper inner cylinder 13 is smaller than the inner diameter of the lower inner cylinder 14; when the lifting plate 2a jacks up the lower inner cylinder 14, even if there is a movement error and the lower inner cylinder 14 moves excessively, the lower inner cylinder 14 will not hit the upper inner cylinder 13, which is beneficial to the safety of the arrangement of the upper inner cylinder 13 and the lower inner cylinder 14; in addition, the upper inner cylinder 13 is partially inserted into the lower inner cylinder 14, and due to the gap misalignment between the two, pollutants are not easily overflowed from between the two.

[0056] Since the coil 3 needs an external power supply, the power connection end of the coil 3 needs to extend out of the lower inner cylinder 14 and the reaction chamber 1 for easy connection to an external power supply. When the lower inner cylinder 14 will be jacked up by the lifting plate 2a, to prevent the coil 3 from hindering the movement of the lower inner cylinder 14, or because the movement of the lower inner cylinder 14 causes the coil 3 to deform, in one embodiment, a vertically extending reserved hole is provided on the chamber wall of the reaction chamber 1, and the power connection end of the coil 3 is fixedly connected to the lower inner cylinder 14 and passes through the lower inner cylinder 14 and then is arranged in the reserved hole; when the lifting plate 2a jacks up the lower inner cylinder 14, the lower inner cylinder 14 drives the coil 3 to move upward, and the power connection end of the coil 3 can move in the reserved hole.

[0057] In another embodiment, the power connection end of the coil 3 includes: an external connection part, arranged in a vertically extending long strip shape, fixedly arranged on the reaction chamber 1 for connection to an external power supply; a moving part, connected to the main body of the coil 3 inside the lower inner cylinder 14; the moving part and the coil main body are fixedly arranged on the lower inner cylinder 14, the moving part contacts the external connection part and can move vertically along the external connection part. When the lifting plate 2a jacks up the lower inner cylinder 14, the coil main body and the moving part can move upward with the lower inner cylinder 14. Since the external connection part has a certain vertical length, the moving part can maintain the state of contacting the external connection part, thus ensuring the external power connection of the coil 3.

[0058] In yet another embodiment, a vertically extending sliding groove is provided at the part of the reaction chamber 1 for connecting the coil 3. An activity piece is slidably arranged in the sliding groove. A vertically extending activity hole is provided in the sliding groove, and a round hole capable of fastening the power connection end of the coil 3 is provided on the activity piece, and the round hole is exposed in the activity hole; after the coil 3 is installed in place, the power connection end of the coil 3 passes through the round hole and the activity hole; when the lifting plate 2a jacks up the lower inner cylinder 14, the lower inner cylinder 14 drives the coil 3, and the coil 3 drives the activity piece to move upward, and the power connection end of the coil 3 displaces in the activity hole, and the activity piece displaces in the sliding groove.

[0059] Through the other two power connection forms of the coil 3, it is convenient for the coil 3 to move vertically with the lower inner cylinder 14, and it can also prevent the installation hole required by the coil 3 from leaking air due to the reserved vertical space.

[0060] The integrated chamber for wafer coating and etching provided by this application further includes: a first gas inlet structure 21 disposed at the lower part of the reaction chamber 1; a second gas inlet structure 22 disposed at the upper part of the reaction chamber 1; an air outlet structure 23 disposed at the bottom of the reaction chamber 1. When wafer etching is performed, the shutter 11 is in a blocking state, the carrier stage 2 rises and carries the wafer into the lower inner cylinder 14, and the reaction gas enters the reaction chamber 1 through the first gas inlet structure 21 and enters the lower inner cylinder 14 along the movement path of the carrier stage 2. When wafer coating is performed, the shutter 11 is in an open state, the upper inner cylinder 13 communicates with the lower inner cylinder 14, the carrier stage 2 rises and carries the wafer into the lower inner cylinder 14, and the lifting plate 2a lifts the lower inner cylinder. The reaction gas enters the upper inner cylinder 13 and the lower inner cylinder 14 through the second gas inlet structure 22. An air outlet hole 14c is provided on the cylinder wall of the lower inner cylinder 14, and the reaction gas can flow to the air outlet structure 23 through the air outlet hole 14c, and the air outlet structure 23 can discharge the reaction gas from the reaction chamber 1.

[0061] Specifically, refer to Figure 2 , in the illustrated embodiment, the first gas inlet structure 21 is disposed at the left bottom of the reaction chamber 1. When wafer etching is performed, the shutter 11 is in a blocking state, and the bottom opening of the upper inner cylinder 13 is covered. The carrier stage 2 rises and lifts the shielding member 6, but the lifting plate 2a does not contact the lower inner cylinder 14. At this time, the reaction area is mainly in the lower inner cylinder 14. The etching reaction gas introduced through the first gas inlet structure 21 can be blown into the lower inner cylinder 14 from the bottom opening of the lower inner cylinder 14 from bottom to top and is ionized by the coil 3.

[0062] It is easy to understand that in order to maintain the air pressure environment in the chamber, the amount of reaction gas supplied is often greater than the amount of ionized reaction gas. At this time, the un-ionized reaction gas can flow out of the lower inner cylinder 14 through the air outlet hole 14c and is finally discharged from the reaction chamber 1 through the air outlet structure 23.

[0063] Continue to refer to Figure 2 , the second gas inlet structure 22 is disposed at the left top of the reaction chamber 1 and communicates with the upper inner cylinder 13. When wafer coating is performed, the carrier stage 2 rises, and the lifting plate 2a rises accordingly to lift the lower inner cylinder 14. Since the lifting plate 2a blocks the bottom opening of the lower inner cylinder 14, the coating reaction gas is introduced through the second gas inlet structure 22. At this time, the reaction area is mainly in the upper inner cylinder 13 and the lower inner cylinder 14. The reaction gas can enter the upper inner cylinder 13 and the lower inner cylinder 14 through the second gas inlet structure 22 and be ionized. The plasma can bombard the target 4 to eject metal atoms, and the metal atoms are deposited on the wafer surface to achieve coating. Similarly, the un-ionized reaction gas can flow out of the lower inner cylinder 14 through the air outlet hole 14c and is finally discharged from the reaction chamber 1 through the air outlet structure 23.

[0064] Optionally, a plurality of air outlet holes 14c are provided on the lower inner cylinder 14, and the plurality of air outlet holes 14c are arranged at intervals in the circumferential direction. In this way, it is possible to prevent the reaction gas from flowing concentratedly towards the position where the air outlet holes 14c are located, thereby affecting the gas balance in the reaction area.

[0065] Figure 4 and Figure 5 In the embodiment shown, a circular extension surface 14d is provided at the bottom end of the lower inner cylinder 14. The outer side of the circular extension surface 14d is connected to the cylinder wall of the lower inner cylinder 14, and an installation step 14b is provided on the inner side. At this time, an annular flow channel is formed between the cylinder wall of the lower inner cylinder 14 and the installation step 14b. The plurality of air outlet holes 14c are arranged on the cylinder wall of the lower inner cylinder 14 that constitutes the annular flow channel. The annular flow channel can guide the reaction gas to flow evenly to each air outlet hole 14c, further ensuring the gas balance in the reaction area.

[0066] Optionally, there is an annular channel 1b between the reaction chamber 1 and the upper inner cylinder 13. The annular channel 1b communicates the second air inlet structure 22 and the upper inner cylinder 13; when performing wafer coating, the reaction gas enters the annular channel 1b through the second air inlet structure 22 and then enters the upper inner cylinder 13 through the annular channel 1b.

[0067] In this way, when the reaction gas is supplied into the reaction area through the second air inlet structure 22, the annular channel 1b will be filled, thereby realizing multi-angle, comprehensive and uniform intake of the reaction gas, which is beneficial to the gas balance in the reaction area.

[0068] Among them, an annular groove can be provided on the inner wall of the reaction chamber 1 and / or the outer wall of the upper inner cylinder 13. When the upper inner cylinder 13 is installed in the reaction chamber 1, the position where the annular groove is located forms the annular channel 1b.

[0069] The present application does not limit the specific configuration of the annular channel 1b.

[0070] In a specific embodiment, referring to Figure 6 and Figure 7, a second hanging step 1c is provided at the top of the cavity of the reaction chamber 1, and a second hanging skirt 13a is provided on the outer wall of the upper inner cylinder 13. The upper inner cylinder 13 can be hung on the second hanging step 1c through the second hanging skirt 13a; when the upper inner cylinder 13 is hung in the reaction chamber 1, there is a first gap between the upper inner cylinder 13 and the inner wall of the reaction chamber 1, and the second air inlet structure 22 communicates with the first gap; the target 4 is arranged above the upper inner cylinder 13, and there is a second gap between the target 4 and the top end of the upper inner cylinder 13. The first gap communicates with the second gap, and the second gap communicates with the inside of the upper inner cylinder 13. Since the cavity of the reaction chamber 1 and the upper inner cylinder 13 are in a cylindrical form, the first gap forms an annular channel 1b, and the second gap is the outlet of the first gap, and the second gap is also an annular structure; thus, after the reaction gas fills the first gap, it can enter the upper inner cylinder 13 evenly and comprehensively from all directions through the second gap.

[0071] By ensuring the uniformity of the gas inlet of the upper inner cylinder 13, the uniformity of the gas distribution in the upper inner cylinder 13 is ensured, and further the uniformity of the plasma generation and distribution is ensured.

[0072] Optionally, a shielding member 6 is provided at the bottom end of the lower inner cylinder 14 away from the upper inner cylinder 13, and the main body of the shielding member 6 is arranged in a circular ring shape; when wafer etching or coating is performed, the stage 2 rises, the stage 2 can contact the shielding member 6, and the wafer on the stage 2 can be exposed through the central circular hole of the shielding member 6; the shielding member 6 can prevent contaminants from depositing downward.

[0073] Among them, the shielding member 6 can be integrally formed with the lower inner cylinder 14. For example, a circular ring-shaped shielding member 6 is provided in the lower inner cylinder 14. The stage 2 can extend into the lower inner cylinder 14 from the bottom opening of the lower inner cylinder 14, but the inner diameter of the shielding member 6 is smaller than the outer diameter of the stage 2. As the stage 2 continuously penetrates into the lower inner cylinder 14, the stage 2 can contact the shielding member 6 from bottom to top, and the shielding member 6 can cover the outer edge of the stage 2 in a circle. The middle part of the shielding member 6 is an open circular hole, and the wafer carried by the stage 2 can be exposed below the coil 3 or the target 4 through the circular hole for etching or coating.

[0074] Alternatively, the shielding member 6 is slidably arranged in the lower inner cylinder 14. For example, a vertically extending sliding groove is provided on the inner wall of the lower inner cylinder 14, and a sliding block is provided on the shielding member 6. The sliding block is clamped in the sliding groove and can move vertically along the sliding groove; during wafer operation, the lifting drive mechanism 7 drives the stage 2 to rise, and the stage 2 can contact and lift the shielding member 6, thereby ensuring the covering effect of the shielding member 6. The sliding block and the sliding groove also have a role of cooperating and limiting, which can prevent the shielding member 6 from displacing horizontally when the stage 2 lifts the shielding member 6.

[0075] In a specific embodiment, an installation step 14b is provided at the bottom end of the lower inner cylinder 14; an installation groove 6a is provided on the lower surface of the shielding member 6 close to the stage 2; the shielding member 6 can be erected on the installation step 14b through the installation groove 6a.

[0076] For details, please refer to Figure 4 and Figure 5 , in the illustrated embodiment, a circular extension surface 14d is provided at the bottom end of the lower inner cylinder 14. The outer side of the circular extension surface 14d is connected to the wall of the lower inner cylinder 14, and a mounting step 14b is provided on the inner side. At this time, an annular flow groove is formed between the wall of the lower inner cylinder 14 and the mounting step 14b.

[0077] Continue to refer to Figure 5 , a mounting groove 6a is provided on the bottom surface of the shielding member 6, and the mounting step 14b can be inserted into the mounting groove 6a.

[0078] During wafer operation, the lifting drive mechanism 7 drives the stage 2 to rise. The stage 2 can contact and lift the shielding member 6, so that the mounting groove 6a is away from the mounting step 14b; the shielding member 6 covers the edge position of the upper surface of the stage 2, can prevent pollutants from depositing downward, and ensure the cleanliness of the cavity and the gas environment in the reaction chamber 1. After the wafer operation is completed, the lifting drive mechanism 7 drives the stage 2 to descend, and the shielding member 6 descends with the stage 2 and returns to the mounting step 14b. The stage 2 continues to descend to the wafer loading and unloading station, so as to facilitate the robot outside the cavity to take away the wafer.

[0079] The shielding member 6 and the lower inner cylinder 14 are set as a split structure, which is convenient for subsequent part cleaning and part replacement.

[0080] Optionally, both the coil 3 and the target 4 are made of titanium.

[0081] Making the coil 3 and the target 4 made of the same material. When performing wafer coating, when the coil 3 is energized, it can also assist the target 4 to realize the ionization of the reaction gas, the escape and deposition of the metal atoms required for coating. At the same time, when the coil 3 is not energized and not working, the metal atoms escaping from the target 4 are deposited on the coil 3, which can also compensate the coil 3 and improve the service life of the coil 3.

[0082] At the same time, when the coil 3 and the target 4 are made of Ti, the Ti atoms bombarded by the plasma and escaping from them can not only be used as coating materials, but also have a certain adsorption property. Especially during the wafer etching process, the Ti atoms bombarded out of the coil 3 can prevent pollutants from overflowing in the reaction area and are conducive to the deposition of pollutants on the shielding member 6.

[0083] Of course, if necessary, the coil 3 and the target 4 can also be made of different materials to meet different wafer operation requirements.

[0084] In a specific embodiment, the coil 3 has an etching working state, a coating working state, and a compensation state. When the coil 3 is in the etching working state, the shutter 11 is in the blocking state. The coil 3 is energized to ionize the reaction gas to form a plasma, and the plasma bombards downward to etch the surface of the wafer. When the coil 3 is in the coating working state, the shutter 11 is in the open state. Both the coil 3 and the target 4 are energized. The coil 3 can enhance the plasma concentration in the reaction chamber 1 and ionize metal atoms to facilitate the directional deposition of metal atoms. When the coil 3 is in the compensation state, the shutter 11 is in the open state, the target 4 is energized, and the coil 3 is not energized. The metal atoms deposit downward, part of which falls on the wafer surface for coating, and another part falls on the coil 3, which can compensate the coil 3 and increase the service life of the coil 3.

[0085] Specifically, when etching the wafer, the shutter 11 is in the blocking state, the target 4 is isolated outside the reaction area, the coil 3 is energized, and a plasma is generated in the reaction area. The plasma bombards downward to etch the surface of the wafer.

[0086] When coating the wafer, the shutter 11 is in the open state, and both the target 4 and the coil 3 are in the reaction area. If only the target 4 is energized, the metal atoms bombarded from the target 4 deposit downward, which can fall on both the wafer surface and the coil 3. The metal atoms falling on the coil 3 can compensate the coil 3, thereby increasing the service life of the coil 3. If both the target 4 and the coil 3 are energized, the coil 3 can also optimize and accelerate the coating.

[0087] The above embodiments only illustrate several implementation manners of the present application, and the description is relatively specific and detailed. However, it should not be construed as a limitation on the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.

Claims

1. A wafer coating and etching integrated chamber, characterized in that: include: A reaction chamber (1), used to provide an operating space for the wafer; A carrier (2) is arranged in the reaction chamber (1) and is used to carry a wafer; A coil (3) is arranged in the reaction chamber (1) and above the carrier (2); A target material (4) is arranged in the reaction chamber (1) and above the coil (3); A shield (11), wherein the shield (11) has a shielding state and an open state; When the shielding plate (11) is in the shielding state, the shielding plate (11) shields the target material (4); When the shield (11) is in the open state, the shield (11) is away from the target material (4); When etching the wafer, the shield (11) is placed in the shielding state, the coil (3) is energized, the reaction gas is ionized, and plasma is formed, and the plasma bombards downward to etch the surface of the wafer; When wafer coating is performed, the shield (11) is placed in the open state, the target material (4) is energized, the reaction gas is ionized, plasma is formed, electrons bombard the target material (4) upwards, metal atoms are generated, and the metal atoms are deposited downwards to coat the wafer surface; The reaction chamber (1) is also provided with: An upper inner cylinder (13) is disposed below the target material (4), and the target material (4) is exposed in the upper inner cylinder (13); A lower inner cylinder (14) is arranged below the upper inner cylinder (13), the coil (3) is arranged in the lower inner cylinder (14), and the carrier (2) is exposed in the lower inner cylinder (14); When the shielding plate (11) is in the shielding state, the shielding plate (11) is located between the upper inner cylinder (13) and the lower inner cylinder (14); The inner wall of the reaction chamber (1) is provided with a hanging step (1a), and the outer wall of the lower inner cylinder (14) is provided with a hanging skirt (14a), and the lower inner cylinder (14) can be hung on the hanging step (1a) through the hanging skirt (14a); When the lower inner cylinder (14) is mounted on the mounting step (1a), a gap is provided between the upper inner cylinder (13) and the lower inner cylinder (14), and the shielding plate (11) can be inserted into the gap to shield the target material (4); A lifting plate (2a) is provided on the outer periphery of the carrier (2); When wafer coating is performed, the carrier (2) rises, and the lifting plate (2a) is able to contact and lift up the lower inner cylinder (14), thereby reducing the gap; The coil (3) and the target material (4) are both made of titanium; The coil (3) has an etching working state, a coating working state and a compensation state; When the coil (3) is in the etching working state, the shield (11) is in the shielding state, the coil (3) is energized, ionizes the reaction gas, forms plasma, and the plasma bombards downward to etch the surface of the wafer; When the coil (3) is in the coating working state, the shield (11) is in the open state, the coil (3) and the target material (4) are both energized, and the coil (3) is capable of enhancing the plasma concentration in the reaction chamber (1) and ionizing metal atoms to facilitate directional deposition of metal atoms; When the coil (3) is in the compensation state, the shield (11) is in the open state, the target material (4) is energized, and the coil (3) is not energized, and metal atoms are deposited downward and can fall onto the coil (3), thereby compensating the coil (3) and increasing the service life of the coil (3).

2. The wafer coating and etching integrated chamber according to claim 1, characterized in that: Also includes: An auxiliary side chamber (5), arranged on one side of the reaction chamber (1) and connected to the reaction chamber (1); A shielding driving mechanism (12) used for driving the shielding plate (11) to move closer to or farther away from the target material (4); When the baffle (11) is in the open state, the auxiliary side cavity (5) is capable of accommodating the baffle (11).

3. The wafer coating and etching integrated chamber according to claim 2, characterized in that: A cleaning mechanism is provided in the auxiliary side cavity (5); When the auxiliary side cavity (5) accommodates the baffle (11), the cleaning mechanism can clean the surface of the baffle (11) and remove pollutants attached to the baffle (11).

4. The wafer coating and etching integrated chamber according to claim 1, characterized in that: Also includes: A first air intake structure (21) disposed at the lower part of the reaction chamber (1); A second air intake structure (22) is arranged at the upper part of the reaction chamber (1); An air outlet structure (23) is arranged at the bottom of the reaction chamber (1); When wafer etching is performed, the shielding plate (11) is in the shielding state, the carrier (2) rises and carries the wafer into the lower inner cylinder (14), and the reaction gas enters the reaction chamber (1) through the first gas inlet structure (21) and enters the lower inner cylinder (14) along the movement path of the carrier (2); When wafer coating is performed, the shielding plate (11) is in the open state, the upper inner cylinder (13) is connected to the lower inner cylinder (14), the carrier (2) rises and carries the wafer into the lower inner cylinder (14), the lifting plate (2a) lifts up the lower inner cylinder (14), and the reaction gas enters the upper inner cylinder (13) and the lower inner cylinder (14) through the second air inlet structure (22); An air outlet hole (14c) is provided on the wall of the lower inner cylinder (14), and the reaction gas can flow through the air outlet hole (14c) to the air outlet structure (23), and the air outlet structure (23) can discharge the reaction gas out of the reaction chamber (1).

5. The wafer coating and etching integrated chamber according to claim 4, characterized in that: An annular channel (1b) is provided between the reaction chamber (1) and the upper inner cylinder (13), wherein the annular channel (1b) is in communication with the second air intake structure (22) and the upper inner cylinder (13); When wafer coating is performed, the reaction gas enters the annular channel (1b) through the second gas inlet structure (22), and then enters the upper inner cylinder (13) through the annular channel (1b).

6. The wafer coating and etching integrated chamber according to claim 1, characterized in that: A shielding member (6) is provided at the bottom end of the lower inner cylinder (14) away from the upper inner cylinder (13), and the main body of the shielding member (6) is arranged in a circular ring shape; When wafer etching or coating is performed, the carrier (2) rises, the carrier (2) can contact the shield (6), and the wafer on the carrier (2) can be exposed through the central circular hole of the shield (6); The shielding member (6) can prevent pollutants from being deposited downwards.

7. The wafer coating and etching integrated chamber according to claim 1, characterized in that: The power connection end of the coil (3) comprises: The external connection part is arranged in the shape of a vertically extending long strip, fixedly arranged on the reaction chamber (1) and used for connecting to an external power source; A movable part connected to a main body of the coil (3) located in the lower inner cylinder (14), and both are fixedly arranged on the lower inner cylinder (14); The moving portion contacts the circumscribed portion and is vertically movable along the circumscribed portion.

Images