Treatment of working cavity after deep trench etching

Abstract

This application relates to the field of semiconductor integrated circuit manufacturing technology, specifically to a method for processing a working cavity after deep trench etching. The method for processing a working cavity after deep trench etching is performed after deep trench etching of the current wafer and before deep trench etching of the next wafer. The method includes the following steps: under a first pressure condition, oxygen is introduced into the working cavity to remove polymers; under a second pressure condition, the original power and bias power of the working cavity are set to 0W, and nitrogen gas is introduced into the upper electrode of the working cavity; the pressure of the second pressure condition is lower than the pressure of the first pressure condition; a vacuum pump located at the bottom of the working cavity is activated to allow the gas atmosphere in the working cavity to flow, so that the nitrogen gas flow carries away the temperature of the upper electrode of the working cavity.

Description

Technical Field

[0001] This application relates to the field of semiconductor integrated circuit manufacturing technology, specifically to a method for processing the working cavity after deep trench etching. Background Technology

[0002] Deep trench etching is often required in the back-end processes of semiconductor integrated circuit manufacturing. However, because the films to be etched are relatively thick, typically 6µm to 8µm, and involve many different types of films, such as oxides, silicon nitride, and doped silicon carbide, the etching menu contains many etching steps and the etching process takes a long time. This results in a rapid temperature rise in the upper electrode plate of the machine's working cavity during the deep trench etching process due to prolonged operation. This not only damages the lifespan of the machine but also adversely affects the working environment of the working cavity, impacting the stability of subsequent process steps. Summary of the Invention

[0003] This application provides a method for processing the working cavity after deep trench etching, which can solve the problem of overheating of the upper electrode plate in the working cavity after the deep trench etching process in related technologies.

[0004] To address the technical problems in the background art, this application provides a working cavity processing method after deep trench etching. The working cavity processing method is performed after deep trench etching of the current wafer and before deep trench etching of the next wafer.

[0005] The method for treating the working cavity after deep trench etching includes the following steps:

[0006] Under the first pressure condition, oxygen is introduced into the working chamber to remove the polymer in the working chamber;

[0007] Under the second pressure condition, the original power and bias power of the working chamber are set to 0W, and nitrogen gas is introduced into the upper plate of the working chamber; the pressure under the second pressure condition is less than the pressure under the first pressure condition.

[0008] The pump located at the bottom of the working chamber is activated to cause the gas atmosphere in the working chamber to flow, so that the nitrogen flow carries away the temperature of the upper electrode plate of the working chamber.

[0009] Optionally, the step of introducing oxygen into the working chamber to remove the polymer in the working chamber under the first pressure condition includes the following steps performed sequentially:

[0010] Under the first pressure condition, the original power of the working chamber is 0W, and oxygen is introduced into the working chamber to remove the polymer in the working chamber;

[0011] Under the first pressure condition, the original power of the working chamber is 100W to 300W, and oxygen is introduced into the working chamber to remove the polymer in the working chamber;

[0012] Under the first pressure condition, the original power of the working chamber is 400W to 600W, and oxygen is introduced into the working chamber to remove the polymer in the working chamber.

[0013] Optionally, the pressure range of the first pressure condition is 280 mT to 320 mT.

[0014] Optionally, the step of introducing oxygen into the working chamber under the first pressure condition to remove the polymer in the working chamber includes:

[0015] Under the first pressure condition, oxygen is introduced into the working chamber at a flow rate of 1700 sccm to 1800 sccm to remove the polymer in the working chamber.

[0016] Optionally, the step of setting the original power and bias power of the working chamber to 0W and introducing nitrogen gas into the upper electrode plate of the working chamber under the second pressure condition includes:

[0017] Under a second pressure condition ranging from 0mT to 150mT, the original power and bias power of the working chamber are set to 0W, and nitrogen gas is introduced into the upper electrode plate of the working chamber.

[0018] Optionally, the step of setting the original power and bias power of the working chamber to 0W and introducing nitrogen gas into the upper electrode plate of the working chamber under the second pressure condition includes:

[0019] Under a second pressure condition ranging from 0 mT to 150 mT, the original power and bias power of the working chamber are set to 0 W, and the flow rate of nitrogen gas to the upper electrode plate of the working chamber is 800 sccm to 1000 sccm.

[0020] Optionally, the thermal conductivity of the nitrogen gas is 0.025 W / (m·K).

[0021] The technical solution of this application includes at least the following advantages: by first introducing oxygen into the working chamber under a first pressure condition to remove the polymer in the working chamber, and under a low pressure condition, setting the original power and bias power of the working chamber to 0W, and introducing high flow rate nitrogen into the upper plate of the working chamber, the high thermal conductivity of nitrogen is utilized to quickly remove the temperature of the upper plate when nitrogen is introduced into the upper plate of the working chamber, thereby cooling the upper plate. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the specific embodiments of this application or the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0023] Figure 1 A flowchart of a method for processing the working cavity after deep trench etching is provided in one embodiment of this application;

[0024] Figure 2 A schematic diagram of nitrogen gas being introduced into the upper electrode plate of the working chamber according to an embodiment of this application is shown. Detailed Implementation

[0025] The technical solutions of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0026] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0027] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal connection of two components; and they can refer to a wireless connection or a wired connection. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0028] Furthermore, the technical features involved in the different embodiments of this application described below can be combined with each other as long as they do not conflict with each other.

[0029] Figure 1This paper illustrates a flowchart of a working cavity processing method after deep trench etching according to an embodiment of this application. After deep trench etching of the current wafer and before deep trench etching of the next wafer, a process is performed... Figure 1 The method shown is for treating the working cavity after deep trench etching to cool the upper electrode plate of the working cavity.

[0030] from Figure 1 As can be seen from the above, the method for treating the working cavity after deep trench etching includes the following steps:

[0031] Step S1: Under the first pressure condition, oxygen is introduced into the working chamber to remove the polymer in the working chamber.

[0032] For example, under a first pressure condition, oxygen at a flow rate of 1700 sccm to 1800 sccm can be introduced into the working chamber to remove the polymer in the working chamber.

[0033] Step S2: Under the second pressure condition, the original power and bias power of the working chamber are set to 0W, and nitrogen gas is introduced into the upper electrode plate of the working chamber; the pressure of the second pressure condition is less than the pressure of the first pressure condition.

[0034] For example, under a second pressure condition ranging from 0 mT to 150 mT, the original power of the working chamber can be set to 0 W, the bias power can be set to 0 W, and the flow rate of nitrogen gas to the upper electrode plate of the working chamber can be 800 sccm to 1000 sccm.

[0035] Nitrogen has a thermal conductivity of 0.025 W / (m·K). Due to its high thermal conductivity, nitrogen can quickly remove heat from the upper plate of the working chamber by passing nitrogen into it, thus cooling the upper plate.

[0036] Figure 2 This illustration shows a schematic diagram of nitrogen gas being introduced into the upper electrode of the working chamber according to an embodiment of this application. Figure 2 As can be seen from the above, the upper electrode 120 includes a heating layer 121 and an electrode layer 122 located below the heating layer. The nozzle 110 can pass nitrogen gas through the heating layer 121 of the upper electrode 120 to reduce the temperature of the heating layer 121 of the upper electrode 120.

[0037] Step S3: The air pump located at the bottom of the working chamber is activated to make the gas atmosphere in the working chamber flow, so that the nitrogen flow carries away the temperature of the upper electrode plate of the working chamber.

[0038] Step S3 can be performed simultaneously with steps S1 and S2.

[0039] For example, step S1 can be implemented through the following steps S11 to S13:

[0040] Step S11: Under the first pressure condition, the original power of the working chamber is 0W, and oxygen is introduced into the working chamber to remove the polymer in the working chamber.

[0041] Step S12: Under the first pressure condition, the original power of the working chamber is 100W to 300W, and oxygen is introduced into the working chamber to remove the polymer in the working chamber.

[0042] Step S13: Under the first pressure condition, the original power of the working chamber is 400W to 600W, and oxygen is introduced into the working chamber to remove the polymer in the working chamber.

[0043] The pressure range for the first pressure condition is 280 mT to 320 mT.

[0044] In this embodiment, oxygen is first introduced into the working chamber under a first pressure condition to remove the polymer. Under a low pressure condition, the original power and bias power of the working chamber are set to 0W. A high flow rate of nitrogen is then introduced into the upper electrode plate of the working chamber. Utilizing the high thermal conductivity of nitrogen, the temperature of the upper electrode plate is rapidly reduced when nitrogen is introduced, thus cooling the upper electrode plate. This prevents a rapid temperature rise in the upper electrode plate due to prolonged operation, thereby extending the machine's lifespan and improving the stability of subsequent processing steps.

[0045] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this application.

Claims

1. A method for processing the working cavity after deep trench etching, characterized in that, The working cavity processing method is performed after deep trench etching of the current wafer and before deep trench etching of the next wafer. The method for treating the working cavity after deep trench etching includes the following steps: Under the first pressure condition, the original power of the working chamber is 0W, and oxygen is introduced into the working chamber to remove the polymer in the working chamber; Under the first pressure condition, the original power of the working chamber is 100W to 300W, and oxygen is introduced into the working chamber to remove the polymer in the working chamber; Under the first pressure condition, the original power of the working chamber is 400W to 600W, and oxygen is introduced into the working chamber to remove the polymer in the working chamber; Under the second pressure condition, the original power and bias power of the working chamber are set to 0W, and nitrogen gas is introduced into the upper plate of the working chamber; the pressure under the second pressure condition is less than the pressure under the first pressure condition. The pump located at the bottom of the working chamber is activated to cause the gas atmosphere in the working chamber to flow, so that the nitrogen flow carries away the temperature of the upper electrode plate of the working chamber.

2. The method for processing the working cavity after deep trench etching as described in claim 1, characterized in that, The pressure range of the first pressure condition is 280 mT to 320 mT.

3. The method for processing the working cavity after deep trench etching as described in claim 1, characterized in that, The step of introducing oxygen into the working chamber to remove the polymer in the working chamber under the first pressure condition includes: Under the first pressure condition, oxygen is introduced into the working chamber at a flow rate of 1700 sccm to 1800 sccm to remove the polymer in the working chamber.

4. The method for processing the working cavity after deep trench etching as described in claim 1, characterized in that, The step of setting the original power and bias power of the working chamber to 0W and introducing nitrogen gas into the upper electrode plate of the working chamber under the second pressure condition includes: Under a second pressure condition ranging from 0mT to 150mT, the original power and bias power of the working chamber are set to 0W, and nitrogen gas is introduced into the upper electrode plate of the working chamber.

5. The method for processing the working cavity after deep trench etching as described in claim 1, characterized in that, The step of setting the original power and bias power of the working chamber to 0W and introducing nitrogen gas into the upper electrode plate of the working chamber under the second pressure condition includes: Under a second pressure condition ranging from 0 mT to 150 mT, the original power and bias power of the working chamber are set to 0 W, and the flow rate of nitrogen gas to the upper electrode plate of the working chamber is 800 sccm to 1000 sccm.

6. The method for processing the working cavity after deep trench etching as described in claim 1, characterized in that, The thermal conductivity of the nitrogen gas is 0.025 W / (m·K).

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