A laser based on lateral epitaxy and its preparation method

Abstract

The present application relates to the technical field of laser preparation, and provides a laser based on lateral epitaxy and a preparation method thereof. The preparation method comprises: growing a buffer layer on a substrate; forming a plurality of first mesa structures; growing an N‑GaAs layer; forming a second mesa structure; growing a quantum well structure; forming a third mesa structure; growing a P‑GaAs layer; removing the P‑GaAs layer on the surface of the third mesa structure to form a fourth mesa structure; removing the first mesa structure and preparing an N‑metal electrode; preparing a P‑metal electrode to obtain a laser based on lateral epitaxy. The preparation method utilizes epitaxial growth instead of etching technology to convert a vertical structure into a lateral structure, which can effectively reduce process complexity, reduce the dependence of the preparation method on high-end equipment, effectively reduce production costs, save production time, and at the same time improve preparation uniformity and production yield.

Description

Technical Field

[0001] The present application relates to the technical field of laser preparation, and in particular to a laser based on lateral epitaxy and a preparation method thereof. Background Art

[0002] Semiconductor lasers have shown broad application prospects in many fields due to their advantages such as high photoelectric conversion efficiency, small size, long life, and easy integration. In particular, semiconductor lasers are playing an increasingly important role in material processing, medical equipment, optical communications, sensor technology, and national defense security.

[0003] Traditional preparation usually involves etching process, and the laser adopts wide stripe structure and deep etching to suppress current diffusion, but this also increases the lateral effective refractive index difference, resulting in the generation of more lateral modes. The increase in working current will cause self-heating effect, which in turn increases the number of lateral modes. In addition, the lateral diffusion of injected carriers leads to non-uniform gain or loss distribution, especially at the edge of the table, which makes high-order lateral modes dominate and the light field power is higher. This makes the traditional etching process more complicated, with high precision requirements and high manufacturing cost, and the uniform performance of the prepared laser cannot be guaranteed.

[0004] Therefore, there is an urgent need for a preparation method that can ensure uniform performance of the laser and is simple, easy to implement and low in cost. Summary of the invention

[0005] The present application provides a laser based on lateral epitaxy and a method for preparing the same, in order to solve the technical problems that uniform performance cannot be guaranteed during the laser preparation process and the method is relatively complex and costly.

[0006] The first aspect of the present application provides a method for preparing a laser based on lateral epitaxy, which comprises growing a buffer layer on a substrate; etching the buffer layer to form a plurality of first mesa structures; wherein the first mesa structure is columnar, and the height of the first mesa structure is less than the height of the buffer layer; growing an N-GaAs layer; wherein the N-GaAs layer covers the surface of the first mesa structure, the side wall of the first mesa structure, and the surface of the buffer layer between any two adjacent first mesa structures; removing the N-GaAs layer on the surface of the first mesa structure to form a second mesa structure; wherein the surface of the N-GaAs layer on the side wall of the first mesa structure after removal is at the same level as the surface of the first mesa structure; growing a quantum well structure; wherein the quantum well structure covers the surface of the second mesa structure, the side wall of the second mesa structure, and the surface of the N-GaAs layer between any two adjacent second mesa structures; removing the second A quantum well structure on the surface of a mesa structure is formed to form a third mesa structure; wherein the surface of the quantum well structure on the side wall of the removed second mesa structure is at the same level as the surface of the second mesa structure; a P-GaAs layer is grown; wherein the P-GaAs layer covers the surface of the third mesa structure, the side wall of the third mesa structure and the surface of the quantum well structure between any two adjacent third mesa structures; the P-GaAs layer on the surface of the third mesa structure is removed to form a fourth mesa structure; wherein the surface of the P-GaAs layer on the side wall of the removed third mesa structure is at the same level as the surface of the third mesa structure; the first mesa structure is removed and an N-metal electrode is prepared; wherein the N-metal electrode is deposited on the buffer layer and the side wall of the P-GaAs layer; a P-metal electrode is prepared to obtain a laser based on lateral epitaxy; wherein the P-metal electrode is deposited on the P-GaAs layer.

[0007] In a specific implementation, removing the first mesa structure and preparing an N-metal electrode includes: preparing a first mask structure; wherein the first mask structure covers an area other than the first mesa structure; etching the first mesa structure; preparing an N-metal electrode; wherein the N-metal electrode is deposited on a surface of the first mask structure, a sidewall of the N-GaAs layer, and a buffer layer; removing the N-metal electrode on the first mask structure and the first mask structure; wherein a surface of the N-metal electrode on the sidewall of the removed N-GaAs layer is at the same level as a surface of the N-GaAs layer.

[0008] In a specific implementation, a P-metal electrode is prepared to obtain a laser based on lateral epitaxy, including: preparing a second mask structure; wherein the second mask structure covers a first region, and the first region includes an N-metal electrode, a surface of an N-GaAs layer grown on a side wall of the N-metal electrode, a surface of a quantum well structure grown on a side wall of the N-GaAs layer, and a surface of a P-GaAs layer grown on a side wall of the quantum well structure; preparing a P-metal electrode; wherein the P-metal electrode covers the second mask structure and the P-GaAs layer between any two adjacent second mask structures; removing the P-metal electrode on the second mask structure and the second mask structure to obtain a laser based on lateral epitaxy; wherein the surface of the P-metal electrode on the side wall of the P-GaAs layer after removal is at the same level as the surface of the P-GaAs layer.

[0009] In a specific implementation, the height of the N-GaAs layer is 300-500 nm, and the height of the P-GaAs layer is 300-500 nm.

[0010] In a specific implementation, the heights of the N-GaAs layer and the P-GaAs layer are both 400 nm.

[0011] In a specific implementation, the period number of the quantum well structure is 1-3, and the quantum well structure includes potential barriers and quantum wells that are grown in sequence.

[0012] In a specific implementation, the period number of the quantum well structure is 1, the height of the potential barrier is 8 nm, and the height of the quantum well is 4 nm.

[0013] In a specific implementation, the substrate is a GaAs substrate, and the buffer layer is a non-doped GaAs buffer layer.

[0014] In a specific implementation, the height of the buffer layer is 3 μm, and the height of the first mesa structure is 2 μm.

[0015] The first aspect of the present application provides a method for preparing a laser based on lateral epitaxy, which utilizes epitaxial growth instead of etching technology to convert a vertical structure into a lateral structure. This can effectively reduce process complexity, reduce the dependence of the preparation method on high-end equipment, effectively reduce production costs, save production time, and at the same time improve preparation uniformity and improve production yield.

[0016] The laser based on lateral epitaxy provided in the second aspect of the present application is prepared by the preparation method provided in the first aspect, and the laser based on lateral epitaxy includes: a substrate; a buffer layer grown on the substrate; an N-metal electrode grown on the buffer layer; wherein the bottom wall of the N-metal electrode is located on the buffer layer, one end of the side wall of the N-metal electrode is connected to the bottom wall, and the other end forms an opening; an N-GaAs layer grown on the buffer layer; wherein the bottom wall of the N-GaAs layer is located on the buffer layer between any adjacent N-metal electrodes, and the side wall of the N-GaAs layer is located on the outer wall surface of the side wall of the N-metal electrode; a quantum well structure grown on the N-GaAs layer; a P-GaAs layer grown on the quantum well structure; and a P-metal electrode grown on the P-GaAs layer.

[0017] The laser based on lateral epitaxy provided in the second aspect of the present application is prepared by adopting the preparation method provided in the first aspect, so its beneficial technical effects can be referred to the first aspect and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solution of the present application, the drawings required for use in the embodiments are briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0019] Figure 1 It is a schematic flow chart of a method for preparing a laser based on lateral epitaxy provided in an embodiment of the present application;

[0020] Figure 2 is a schematic structural diagram of a buffer layer provided in an embodiment of the present application;

[0021] Figure 3 is a structural schematic diagram of a first table structure provided in an embodiment of the present application;

[0022] Figure 4 is a schematic diagram of the structure of an N-GaAs layer provided in an embodiment of the present application;

[0023] Figure 5 is a structural schematic diagram of a second table structure provided in an embodiment of the present application;

[0024] Figure 6 is a schematic structural diagram of a quantum well structure provided in an embodiment of the present application;

[0025] Figure 7 is a structural schematic diagram of a third table structure provided in an embodiment of the present application;

[0026] Figure 8is a schematic structural diagram of a P-GaAs layer provided in an embodiment of the present application;

[0027] Fig. 9 is a structural schematic diagram of a fourth table structure provided in an embodiment of the present application;

[0028] Fig.10 is a structural schematic diagram of a first mask structure provided in an embodiment of the present application;

[0029] Fig.11 is a schematic diagram of a structure after removing the first table structure provided in an embodiment of the present application;

[0030] Fig.12 is a schematic structural diagram of an N-metal electrode provided in an embodiment of the present application;

[0031] Fig.13 is a schematic diagram of a structure after removing the first mask structure provided by an embodiment of the present application;

[0032] Fig.14 is a structural schematic diagram of a second mask structure provided in an embodiment of the present application;

[0033] Fig.15 is a schematic structural diagram of a P-metal electrode provided in an embodiment of the present application;

[0034] Fig.16 It is a schematic diagram of the structure of a laser based on lateral epitaxy provided in an embodiment of the present application.

[0035] Graphic marking:

[0036] 100-Laser based on lateral epitaxy; 1-Substrate; 2-Buffer layer; 21-First mesa structure; 3-N-GaAs layer; 31-Second mesa structure; 4-Quantum well structure; 41-Third mesa structure; 5-P-GaAs layer; 51-Fourth mesa structure; 6-First mask structure; 7-N-Metal electrode; 8-Second mask structure; 9-P-Metal electrode. DETAILED DESCRIPTION

[0037] The technical solutions in the embodiments of the present application will be described clearly below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments of the present application, other embodiments obtained by ordinary technicians in this field without making creative work all belong to the protection scope of the present application.

[0038] In the following, the terms "first", "second", etc. are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0039] In addition, in the present application, directional terms such as "upper", "lower", "inner" and "outer" are defined relative to the orientation of the components schematically placed in the drawings. It should be understood that these directional terms are relative concepts. They are used for relative description and clarification, and they can change accordingly according to the changes in the orientation of the components placed in the drawings.

[0040] In the traditional method of preparing lasers, the deep etching process of ridge waveguides usually involves a precise etching process, which requires specific equipment and technology, making the entire production process more complicated and expensive. In order to achieve effective light field confinement and low-loss waveguide performance, deep etching must be very precise, which requires high-precision processing technology and strict quality control. During the etching process, thermal effects will occur, and excessive heat will affect the properties of the material. However, the uniformity of the prepared laser cannot be guaranteed.

[0041] In order to solve the problem of reliance on high-end equipment in the laser preparation process, complex manufacturing methods, high production costs, and poor uniformity of the prepared lasers, an embodiment of the present application provides a method for preparing a laser based on lateral epitaxy.

[0042] The preparation method of the laser based on lateral epitaxy provided in the embodiment of the present application can be implemented by the following steps S1 to S10. The preparation method can reduce process complexity, reduce dependence on high-end equipment, improve the uniformity of the laser, effectively reduce preparation costs, and effectively improve product yield.

[0043] See also Figure 1 and Figure 2 , step S1: growing a buffer layer 2 on a substrate 1 .

[0044] In step S1 , the buffer layer 2 may be grown by metal-organic chemical vapor deposition (MOCVD).

[0045] The substrate 1 may be a GaAs substrate, and the buffer layer 2 may be a non-doped GaAs buffer layer.

[0046] In a specific implementation, the thickness of the non-doped GaAs buffer layer may be 3 μm.

[0047] See also Figure 1 and Figure 3 , step S2: etching the buffer layer 2 to form a plurality of first mesa structures 21 .

[0048] In step S2 , etching of the first mesa structure 21 may be achieved through the following steps S21 and S22 .

[0049] Step S21: Photolithographically patterning a mask structure on the surface of the buffer layer 2 (not shown in the figure).

[0050] Among them, the part not covered by the graphic mask structure is a plurality of circular holes, and the positions of the plurality of circular holes correspond to the positions of the surface of the first mesa structure 21 to be etched and formed. Subsequently, the graphic mask structure can be etched to obtain the first mesa structure 21 to be prepared.

[0051] Step S22: etching the patterned mask structure and the buffer layer 2 covered by the patterned mask structure.

[0052] In this way, the first mesa structure 21 obtained by etching is columnar, wherein the etching depth is less than the thickness of the buffer layer 2 , and the height of the first mesa structure 21 is less than the height of the buffer layer 2 .

[0053] In a specific implementation, the thickness of the buffer layer 2 may be 3 μm, and the height H1 of the first mesa structure 21 may be 2 μm. At this time, the height of the unetched portion of the buffer layer 2 is 1 μm. The diameter D1 of the first mesa structure 21 may be 2 μm. The distance between the centers of any two adjacent first mesa structures 21 may be 5 μm.

[0054] In another specific implementation, step S2 may also implement etching of the first mesa structure 21 through steps S23 to S25.

[0055] Step S23: photolithography a circular mask structure (not shown in the figure) on the surface of the buffer layer 2 .

[0056] The diameter of the circular mask structure is the same as the diameter of the first mesa structure 21 to be etched, and the positions of the circular mask structure and the first mesa structure 21 are opposite to each other.

[0057] Step S24: etching the buffer layer 2 not covered by the circular mask structure.

[0058] The etching depth may be the same as that in the above implementation.

[0059] Step S25: removing the circular mask structure.

[0060] The circular mask structure may be removed by cleaning.

[0061] It is worth noting that in the two different implementations, the corresponding method can be selected according to the preparation environment and equipment parameters.

[0062] Combination Figure 1 and Figure 4 , step S3: growing an N-GaAs layer 3.

[0063] In step S3 , MOCVD technology may be used to prepare the N-GaAs layer 3 , wherein the N-GaAs layer 3 covers the surface of the first mesa structure 21 , the sidewall of the first mesa structure 21 , and the buffer layer 2 between any two adjacent first mesa structures 21 .

[0064] The thickness of the N-GaAs layer 3 may be 300-500 nm. For example, the thickness of the N-GaAs layer 3 may be one of 300 nm, 350 nm, 400 nm, 450 nm or 500 nm. Of course, the thickness of the N-GaAs layer 3 may also be other values ​​in the range of 300-500 nm.

[0065] Combination Figure 1 and Figure 5 , step S4: removing the N-GaAs layer 3 on the surface of the first mesa structure 21 to form a second mesa structure 31.

[0066] In step S4 , chemical mechanical polishing (CMP) may be used to remove the N-GaAs layer 3 .

[0067] The surface of the N-GaAs layer 3 on the side wall of the first mesa structure 21 after removal is at the same level as the surface of the first mesa structure 21. In other words, the surface of the second mesa structure 31 is composed of the surface of the first mesa structure 21 and the surface of the N-GaAs layer 3 grown on the side wall of the first mesa structure 21.

[0068] Specifically, the diameter D2 of the second mesa structure 31 is greater than the diameter D1 of the first mesa structure 21 . The height H2 of the second mesa structure 31 is less than the height H1 of the first mesa structure 21 .

[0069] Combination Figure 1 and Figure 6 , step S5: growing a quantum well structure 4.

[0070] In step S5 , the quantum well structure 4 can be prepared on the second mesa structure 31 by using MOCVD technology. The quantum well structure 4 covers the surface of the second mesa structure 31 , the sidewall of the second mesa structure 31 , and the N-GaAs layer 3 between any two adjacent second mesa structures 31 .

[0071] In some feasible implementations, the quantum well structure 4 includes potential barriers and quantum wells that are grown sequentially. The number of periods of the quantum well structure 4 may be 1-3.

[0072] For example, the number of periods of the quantum well structure 4 may be 2, and in this case the quantum well structure 4 includes a potential barrier, a quantum well, a potential barrier, and a quantum well that are grown in sequence.

[0073] In a specific implementation, the number of periods of the quantum well structure 4 may be 1. In the quantum well structure 4 with 1 period, the height of the potential barrier may be 8 nm, and the height of the quantum well may be 4 nm.

[0074] Combination Figure 1 and Figure 7 , step S6: removing the quantum well structure 4 on the surface of the second mesa structure 31 to form a third mesa structure 41 .

[0075] In step S6 , the quantum well structure 4 may be removed by using CMP technology.

[0076] Among them, the surface of the quantum well structure 4 on the side wall of the removed second mesa structure 31 is at the same level as the surface of the second mesa structure 31, that is, the surface of the third mesa structure 41 is composed of the surface of the second mesa structure 31 and the surface of the quantum well structure 4 grown on the side wall of the second mesa structure 31.

[0077] Specifically, the diameter D3 of the third mesa structure 41 is greater than the diameter D2 of the second mesa structure 31 . The height H3 of the third mesa structure 41 is less than the height H2 of the second mesa structure 31 .

[0078] Combination Figure 1 and Figure 8 , step S7: growing a P-GaAs layer 5.

[0079] In step S7 , the MOCVD technology may be used to grow the P-GaAs layer 5 , wherein the P-GaAs layer 5 covers the surface of the third mesa structure 41 , the sidewall of the third mesa structure 41 , and the quantum well structure 4 between any two adjacent third mesa structures 41 .

[0080] The thickness of the P-GaAs layer 5 may be 300-500 nm. For example, the thickness of the P-GaAs layer 5 may be one of 300 nm, 350 nm, 400 nm, 450 nm or 500 nm. Of course, the thickness of the P-GaAs layer 5 may also be other values ​​in the range of 300-500 nm.

[0081] In a specific implementation, the height of the N-GaAs layer 3 is the same as the height of the P-GaAs layer 5 , and both are 400 nm.

[0082] Combination Figure 1 and Fig. 9 , step S8: removing the P-GaAs layer 5 on the surface of the third mesa structure 41 to form a fourth mesa structure 51 .

[0083] In step S8 , the P-GaAs layer 5 may be removed by using CMP technology.

[0084] The surface of the P-GaAs layer 5 on the side wall of the third mesa structure 41 after removal is at the same level as the surface of the third mesa structure 41. In other words, the surface of the fourth mesa structure 51 is composed of the surface of the third mesa structure 41 and the surface of the P-GaAs layer 5 grown on the side wall of the third mesa structure 41.

[0085] Specifically, the diameter D4 of the fourth mesa structure 51 is greater than the diameter D3 of the third mesa structure 41 . The height H4 of the fourth mesa structure 51 is less than the height H3 of the third mesa structure 41 .

[0086] Step S9: removing the first mesa structure 21 and preparing an N-metal electrode.

[0087] Specifically, step S9 can be implemented by the following steps S91 to S94.

[0088] Combination Figure 1 and Fig.10 , step S91: preparing a first mask structure 6.

[0089] The N-metal electrode is deposited on the side walls of the buffer layer 2 and the N-GaAs layer 3 .

[0090] In step S91, the first mask structure 6 may be prepared by photolithography, wherein the first mask structure 6 covers the area other than the first mesa structure 21. In this way, the first mesa structure 21 may be etched by etching the portion not covered by the first mask structure 6. The diameter of the mesa of the etched portion of the first mesa structure 21 is Figure 3 D1 shown.

[0091] In a specific implementation, the diameter of the first mask structure 6 may be 3 μm, and the distance between the centers of any two adjacent first mask structures 6 may be 5 μm.

[0092] Combination Figure 1 and Fig.11 , step S92: etching the first mesa structure 21.

[0093] In step S92 , the first mesa structure 21 may be removed by ICP etching technology, thereby exposing the sidewall of the N-GaAs layer 3 , wherein the etching depth is the height of the first mesa structure 21 .

[0094] Combination Figure 1 and Fig.12 , step S93: preparing an N-metal electrode 7.

[0095] In step S93 , sputtering technology may be used to deposit the N-metal electrode 7 , wherein the N-metal electrode 7 is deposited on the surface of the first mask structure 6 , the sidewall of the N-GaAs layer 3 , and the buffer layer 2 .

[0096] Combination Figure 1 and Fig.13 , step S94: removing the N-metal electrode 7 on the first mask structure 6 and the first mask structure 6 .

[0097] In step S94, the N-metal electrode 7 may be removed by using a stripping technique. The surface of the N-metal electrode 7 on the side wall of the N-GaAs layer 3 after stripping is at the same level as the surface of the N-GaAs layer 3. In other words, the surface of the N-metal electrode 7 on the side wall of the N-GaAs layer 3 after stripping is at the same level as the surfaces of the N-GaAs layer 3, the quantum well structure 4, and the P-GaAs layer 5.

[0098] Step S10: Prepare a P-metal electrode to obtain a laser based on lateral epitaxy.

[0099] The P-metal electrode is deposited on the P-GaAs layer 5 .

[0100] Specifically, step S10 can be implemented by the following steps S101 to S103.

[0101] Combination Figure 1 and Fig.14 , step S101: preparing a second mask structure 8.

[0102] In step S101, a second mask structure 8 may be prepared by using photolithography technology, wherein the second mask structure 8 covers the first region. The diameter of the first region is D5.

[0103] Specifically, the first region includes the N-metal electrode 7, the surface of the N-GaAs layer 3 grown on the side wall of the N-metal electrode 7, the surface of the quantum well structure 4 grown on the side wall of the N-GaAs layer 3, and the surface of the P-GaAs layer 5 grown on the side wall of the quantum well structure 4. The first region does not include the wall surface of the P-GaAs layer 5 in the enclosed area between the side walls of the P-GaAs layer 5, that is, the first region does not include the wall surface of the P-GaAs layer 5 stacked sequentially on the top of the buffer layer 2.

[0104] In other words, the first region may correspond to the region where the surface of the fourth mesa structure 51 prepared in step S8 is located.

[0105] In a specific implementation, the diameter of the second mask structure 8 may be 3 μm, and the distance between the centers of any two adjacent second mask structures 8 is 5 μm.

[0106] Combination Figure 1 and Fig.15 , step S102: preparing a P-metal electrode 9.

[0107] In step S102 , a sputtering technique may be used to deposit a P-metal electrode 9 , wherein the P-metal electrode 9 covers the second mask structure 8 and the P-GaAs layer 5 between any two adjacent second mask structures 8 .

[0108] Combination Figure 1 and Fig.16 , step S103: removing the P-metal electrode 9 on the second mask structure 8 and the second mask structure 8 to obtain a laser 100 based on lateral epitaxy.

[0109] In step S103, the P-metal electrode 9 and the second mask structure 8 on the second mask structure 8 can be removed by using a stripping technique. The surface of the P-metal electrode 9 on the side wall of the P-GaAs layer 5 after removal is on the same horizontal plane as the surface of the P-GaAs layer 5. The surface of a certain structure refers to the surface of the top of the structure layer away from the buffer layer 2. For example, the surface of the P-metal electrode 9 is the surface of the top surface of the P-metal electrode 9 away from the buffer layer 2, that is, the surface that coincides with the plane where the surfaces of the first mesa structure 21, the second mesa structure 31, the third mesa structure 41 and the fourth mesa structure 51 are located.

[0110] The prepared P-metal electrode 9 is a structural layer stacked in sequence with the aforementioned prepared P-GaAs layer 5, quantum well structure 4, and N-GaAs layer 3, and has the same cross-sectional shape but different sizes.

[0111] The method for preparing a laser based on lateral epitaxy provided in the embodiment of the present application utilizes epitaxial growth instead of etching technology to convert a vertical structure into a lateral structure, which can effectively reduce process complexity, reduce the dependence of the preparation method on high-end equipment, effectively reduce production costs and save production time, while also being able to improve preparation uniformity and increase production yield.

[0112] Corresponding to the aforementioned embodiment of the method for preparing a laser based on lateral epitaxy, the present application also provides an embodiment of a laser 100 based on lateral epitaxy.

[0113] Continue to see Fig.16As shown, the lateral epitaxy-based laser 100 includes: a substrate 1, a buffer layer 2, an N-metal electrode 7, an N-GaAs layer 3, a quantum well structure 4, a P-GaAs layer 5 and a P-metal electrode 9.

[0114] A buffer layer 2 is grown on a substrate 1; an N-metal electrode 7 is grown on the buffer layer 2; wherein the bottom wall of the N-metal electrode 7 is located on the buffer layer 2, one end of the side wall of the N-metal electrode 7 is connected to the bottom wall, and the other end forms an opening; an N-GaAs layer 3 is grown on the buffer layer 2; wherein the bottom wall of the N-GaAs layer 3 is located on the buffer layer 2 between any adjacent N-metal electrodes 7, and the side wall of the N-GaAs layer 3 is located on the outer wall surface of the side wall of the N-metal electrode 7; a quantum well structure 4 is grown on the N-GaAs layer 3; a P-GaAs layer 5 is grown on the quantum well structure 4; and a P-metal electrode 9 is grown on the P-GaAs layer 5.

[0115] It should be noted that those skilled in the art will easily think of other embodiments of the present application after considering the specification and practicing the application disclosed herein. The present application is intended to cover any variation, use or adaptation of the present application, which follows the general principles of the present application and includes common knowledge or customary technical means in the art that are not disclosed in the present application.

[0116] It should be understood that the present application is not limited to the precise construction that has been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof, the true scope being indicated by the present application.

Claims

1. A method for preparing a laser based on lateral epitaxy, characterized in that: include: growing a buffer layer on the substrate; Etching the buffer layer to form a plurality of first mesa structures; wherein the first mesa structures are columnar, and the height of the first mesa structures is smaller than the height of the buffer layer; Growing an N-GaAs layer; wherein the N-GaAs layer covers the surface of the first mesa structure, the sidewall of the first mesa structure, and the surface of the buffer layer between any two adjacent first mesa structures; Removing the N-GaAs layer on the surface of the first mesa structure to form a second mesa structure; wherein the surface of the N-GaAs layer on the side wall of the first mesa structure after removal is in the same horizontal plane as the surface of the first mesa structure; Growing a quantum well structure; wherein the quantum well structure covers the surface of the second mesa structure, the sidewall of the second mesa structure, and the surface of the N-GaAs layer between any two adjacent second mesa structures; Removing the quantum well structure on the surface of the second mesa structure to form a third mesa structure; wherein the surface of the quantum well structure on the side wall of the removed second mesa structure is at the same level as the surface of the second mesa structure; Growing a P-GaAs layer; wherein the P-GaAs layer covers the surface of the third mesa structure, the sidewall of the third mesa structure, and the surface of the quantum well structure between any two adjacent third mesa structures; Removing the P-GaAs layer on the surface of the third mesa structure to form a fourth mesa structure; wherein the surface of the P-GaAs layer on the side wall of the third mesa structure after removal is on the same horizontal plane as the surface of the third mesa structure; Removing the first mesa structure and preparing an N-metal electrode; wherein the N-metal electrode is deposited on the sidewalls of the buffer layer and the P-GaAs layer; A P-metal electrode is prepared to obtain a laser based on lateral epitaxy; wherein the P-metal electrode is deposited on the P-GaAs layer.

2. The method for preparing a laser based on lateral epitaxy according to claim 1, characterized in that: Removing the first mesa structure and preparing an N-metal electrode, comprising: Prepare a first mask structure; wherein the first mask structure covers an area other than the first mesa structure; etching the first mesa structure; Prepare an N-metal electrode; wherein the N-metal electrode is deposited on the surface of the first mask structure, the sidewall of the N-GaAs layer and the buffer layer; The N-metal electrode and the first mask structure on the first mask structure are removed; wherein the surface of the N-metal electrode on the sidewall of the N-GaAs layer after removal is at the same level as the surface of the N-GaAs layer.

3. The method for preparing a laser based on lateral epitaxy according to claim 1, characterized in that: Prepare P-metal electrodes to obtain a laser based on lateral epitaxy, including: Prepare a second mask structure; wherein the second mask structure covers a first region, wherein the first region includes the N-metal electrode, a surface of the N-GaAs layer grown on a sidewall of the N-metal electrode, a surface of the quantum well structure grown on a sidewall of the N-GaAs layer, and a surface of the P-GaAs layer grown on a sidewall of the quantum well structure; Prepare a P-metal electrode; wherein the P-metal electrode covers the second mask structure and the P-GaAs layer between any two adjacent second mask structures; The P-metal electrode on the second mask structure and the second mask structure are removed to obtain a laser based on lateral epitaxy; wherein the surface of the P-metal electrode on the side wall of the P-GaAs layer after removal is at the same level as the surface of the P-GaAs layer.

4. The method for preparing a laser based on lateral epitaxy according to claim 1, characterized in that: The height of the N-GaAs layer is 300-500 nm, and the height of the P-GaAs layer is 300-500 nm.

5. The method for preparing a laser based on lateral epitaxy according to claim 4, characterized in that: The heights of the N-GaAs layer and the P-GaAs layer are both 400 nm.

6. The method for preparing a laser based on lateral epitaxy according to claim 1, characterized in that: The period number of the quantum well structure is 1-3, and the quantum well structure includes potential barriers and quantum wells that are grown in sequence.

7. The method for preparing a laser based on lateral epitaxy according to claim 6, characterized in that: The period number of the quantum well structure is 1, the height of the potential barrier is 8 nm, and the height of the quantum well is 4 nm.

8. The method for preparing a laser based on lateral epitaxy according to claim 1, characterized in that: The substrate is a GaAs substrate, and the buffer layer is a non-doped GaAs buffer layer.

9. The method for preparing a laser based on lateral epitaxy according to claim 1, characterized in that: The height of the buffer layer is 3 μm, and the height of the first mesa structure is 2 μm.

10. A laser based on lateral epitaxy, characterized in that: The laser is prepared by the method for preparing a laser based on lateral epitaxy according to any one of claims 1 to 9, wherein the laser based on lateral epitaxy comprises: substrate; a buffer layer grown on the substrate; An N-metal electrode is grown on the buffer layer; wherein the bottom wall of the N-metal electrode is located on the buffer layer, one end of the side wall of the N-metal electrode is connected to the bottom wall, and the other end forms an opening; An N-GaAs layer is grown on the buffer layer; wherein the bottom wall of the N-GaAs layer is located on the buffer layer between any adjacent N-metal electrodes, and the sidewalls of the N-GaAs layer are located on the outer wall surface of the sidewalls of the N-metal electrodes; A quantum well structure grown on the N-GaAs layer; A P-GaAs layer grown on the quantum well structure; A P-metal electrode is grown on the P-GaAs layer.

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