Airflow disturbance optimization control method and system based on reactor

Abstract

The present application relates to the field of reactor control technology, and in particular to an airflow disturbance optimization control method and system based on a reactor, the steps of which include: obtaining temperature data and reactor volume data in the reactor, obtaining vacuum data in a quartz reaction tube in the reactor, and obtaining inert gas control parameters in the reactor; calculating the temperature uniformity coefficient in the reactor through temperature data; calculating the vacuum fluctuation coefficient in the quartz reaction tube through vacuum data; calculating the airflow disturbance index in the reactor through the temperature uniformity coefficient and the vacuum fluctuation coefficient, and adjusting the inert gas control parameters through the airflow disturbance index combined with the reactor volume data. The present application improves the preparation quality and efficiency of indium phosphide materials by quantifying the degree of airflow disturbance in the reactor and adjusting the inert gas control parameters in a targeted manner.

Description

Technical Field

[0001] The present application relates to the technical field of reactor control, and in particular to a method and system for optimizing control of airflow disturbance based on a reactor. Background Art

[0002] Indium phosphide (InP) is an important semiconductor material for the preparation of optoelectronic devices and microelectronic devices. It has excellent properties such as high electron mobility, large bandgap, and strong radiation resistance. It is widely used in devices such as integrated circuits, sensors, solar cells, and optical modules. It has broad application prospects in 5G communications, aerospace, and artificial intelligence.

[0003] The preparation of indium phosphide materials needs to be carried out under high temperature and high pressure conditions. The reactor can provide the high temperature and high pressure environment required to promote the chemical reaction between phosphorus and indium elements, thereby forming indium phosphide materials with specific structures and properties. At the same time, the airtightness and stability of the reactor can effectively prevent contamination and interference from external impurities, ensuring that the reaction is carried out in a pure environment.

[0004] In the process of preparing indium phosphide, reasonable control of high-pressure airflow disturbance in the reactor is particularly critical for the production of indium phosphide materials. The existing reactor-based airflow disturbance optimization control method ignores the impact of airflow disturbance on the production of indium phosphide materials. Airflow disturbance will cause the temperature field in the reactor to change, destroy the preset vertical temperature gradient, and cause thermal stress inside the indium phosphide material, thereby causing dislocation defects and resulting in a decrease in the quality of the prepared indium phosphide material. Summary of the invention

[0005] In order to overcome the defects and shortcomings of the prior art, the present application provides a method and system for optimizing the control of airflow disturbances in a reactor, which quantifies the degree of airflow disturbances in the reactor and then adjusts the inert gas control parameters in a related manner, thereby improving the preparation quality and efficiency of indium phosphide materials.

[0006] In order to achieve the above objectives, this application adopts the following technical solutions:

[0007] In a first aspect, the present application provides a method for optimizing and controlling airflow disturbances in a reactor, comprising the following steps:

[0008] Acquire temperature data and volume data in the reaction furnace, acquire vacuum data in the quartz reaction tube in the reaction furnace, and acquire inert gas control parameters in the reaction furnace;

[0009] Calculate the temperature uniformity coefficient in the reactor through temperature data;

[0010] Calculate the vacuum fluctuation coefficient in the quartz reaction tube through the vacuum data;

[0011] The airflow disturbance index in the reactor is calculated by the temperature uniformity coefficient and the vacuum fluctuation coefficient, and the inert gas control parameters are adjusted by the airflow disturbance index combined with the reactor volume data.

[0012] As a possible implementation, the specific steps of calculating the temperature uniformity coefficient in the reaction furnace include:

[0013] Obtain temperature data in the reaction furnace;

[0014] The horizontal temperature symmetry coefficient and vertical temperature gradient uniformity coefficient in the reactor are calculated by temperature data. The vertical temperature gradient uniformity coefficient calculation formula is:

[0015] ;

[0016] In the formula Indicates the distribution along the vertical direction The temperature of each monitoring point, Indicates the distribution along the vertical direction The temperature of each monitoring point, Represents the temperature difference between two adjacent monitoring points distributed in the vertical direction. Indicates the distribution along the vertical direction Monitoring point and The distance between monitoring points, represents the number of monitoring points, Indicates taking the maximum value, It represents the uniformity coefficient of vertical temperature gradient;

[0017] The temperature uniformity coefficient is calculated by the horizontal temperature symmetry coefficient and the vertical temperature gradient uniformity coefficient. The temperature uniformity coefficient calculation formula is:

[0018] ;

[0019] In the formula represents the horizontal temperature symmetry coefficient, represents the vertical temperature gradient uniformity coefficient, represents the adjustment factor, Represents the temperature uniformity coefficient.

[0020] As a possible implementation method, the horizontal temperature symmetry coefficient calculation formula is:

[0021] ;

[0022] In the formula and Indicates The temperature of two monitoring points symmetrically along the central axis of the solid-liquid interface is represents the number of monitoring point combinations symmetrical along the central axis of the solid-liquid interface, Represents the horizontal temperature symmetry coefficient.

[0023] As a possible implementation method, the specific steps of calculating the vacuum degree fluctuation coefficient in the quartz reaction tube include:

[0024] Obtaining vacuum degree data in the quartz reaction tube in the reaction furnace;

[0025] The vacuum fluctuation coefficient in the quartz reaction tube is calculated using the vacuum data. The calculation formula for the vacuum fluctuation coefficient is:

[0026] ;

[0027] In the formula Indicates the average vacuum degree in the quartz reaction tube, Indicates the quartz reaction tube The vacuum degree of each monitoring point, represents the number of monitoring points, Indicates the vacuum fluctuation coefficient.

[0028] As a possible implementation, the specific steps of calculating the airflow disturbance index in the reactor include:

[0029] Obtain temperature uniformity coefficient and vacuum degree fluctuation coefficient;

[0030] The airflow disturbance index in the reactor is calculated by the temperature uniformity coefficient and the vacuum fluctuation coefficient. The calculation formula of the airflow disturbance index is:

[0031] ;

[0032] In the formula represents the temperature uniformity coefficient, represents the vacuum degree fluctuation coefficient, represents the temperature uniformity weight, represents the vacuum degree fluctuation weight, Represents the airflow disturbance index.

[0033] As a possible implementation method, the specific steps of adjusting the inert gas control parameters include:

[0034] Obtaining gas flow disturbance index, reactor volume data and inert gas control parameters, wherein the inert gas control parameters include inert gas quantity and inert gas flow rate;

[0035] The first pressure data in the reaction furnace and the second pressure data in the reaction tube are obtained, and the amount of inert gas charged or discharged is determined by the first pressure data, the second pressure data and the volume data of the reaction furnace. The inert gas amount calculation formula is:

[0036] ;

[0037] In the formula Indicates the first pressure data in the reactor, represents the second pressure data in the reaction tube, Represents the reactor volume data, Indicates the amount of inert gas. If , then the amount of gas charged into the reactor is of inert gas, if , then the amount of gas discharged from the reactor is of inert gas, if , the current state of the reactor is maintained unchanged;

[0038] The flow rate of inert gas filling or exhaust is determined by the airflow disturbance index. The inert gas flow rate calculation formula is:

[0039] ;

[0040] In the formula Indicates the initial flow rate of the inert gas set in the reactor. represents the airflow disturbance index, Indicates the inert gas flow rate.

[0041] It should be noted here that the adjustment factor, temperature uniformity weight and vacuum fluctuation weight are obtained as follows: 5000 sets of temperature data, reactor volume data and vacuum data are collected to distinguish whether the airflow disturbance in the reactor meets the requirements for indium phosphide production, and the temperature data, reactor volume data, vacuum data and inert gas control parameters are substituted into the airflow disturbance index calculation formula for calculation, and the calculated airflow disturbance index and the distinction result are simultaneously imported into the fitting software, and the optimal adjustment factor, temperature uniformity weight and vacuum fluctuation weight that meet the distinction accuracy of the distinction result are output.

[0042] In a second aspect, the present application provides an airflow disturbance optimization control system based on a reactor, comprising:

[0043] A data acquisition module is used to acquire temperature data and volume data in the reaction furnace, vacuum degree data in the quartz reaction tube in the reaction furnace, and inert gas control parameters in the reaction furnace;

[0044] A temperature uniformity coefficient calculation module is used to calculate the temperature uniformity coefficient in the reaction furnace through temperature data;

[0045] A vacuum degree fluctuation coefficient calculation module is used to calculate the vacuum degree fluctuation coefficient in the quartz reaction tube through vacuum degree data;

[0046] The airflow disturbance index calculation module is used to calculate the airflow disturbance index in the reactor through the temperature uniformity coefficient and the vacuum fluctuation coefficient, and adjust the inert gas control parameters through the airflow disturbance index combined with the reactor volume data.

[0047] An electronic device of the present application includes: a processor and a memory, wherein the memory stores a computer program that can be called by the processor, and the processor executes a method for optimizing the control of airflow disturbances based on a reactor by calling the computer program stored in the memory.

[0048] A computer-readable storage medium of the present application stores instructions, and when the instructions are executed on a computer, the computer executes a method for optimizing and controlling airflow disturbances based on a reactor.

[0049] Compared with the prior art, this application has the following advantages and beneficial effects:

[0050] The present application first quantifies the horizontal temperature symmetry and vertical temperature gradient uniformity in a reactor through a temperature uniformity coefficient, then calculates the vacuum fluctuation coefficient in a quartz reaction tube in the reactor through vacuum data, and finally calculates the airflow disturbance index in the reactor by combining the temperature uniformity coefficient and the vacuum fluctuation coefficient. The degree of airflow disturbance in the reactor is quantified through the airflow disturbance index, and the inert gas control parameters in the reactor are adjusted in a targeted manner according to the airflow disturbance index, so as to reduce the airflow disturbance in the reactor, thereby improving the preparation quality and preparation efficiency of indium phosphide materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:

[0052] Figure 1 A schematic diagram of the overall process of an airflow disturbance optimization control method based on a reactor provided in an embodiment of the present application;

[0053] Figure 2 A schematic diagram of a flow chart for calculating the temperature uniformity coefficient in a reaction furnace provided in an embodiment of the present application;

[0054] Figure 3 A schematic diagram of the structure of an airflow disturbance optimization control system based on a reactor provided in an embodiment of the present application;

[0055] Figure 4 A schematic diagram of the structure of an electronic device for executing a method for optimizing airflow disturbance control based on a reactor provided in an embodiment of the present application. DETAILED DESCRIPTION

[0056] The technical solution of the present application is described in detail below through the accompanying drawings and specific embodiments. It should be understood that the embodiments of the present application and the specific features in the embodiments are detailed descriptions of the technical solution of the present application, rather than limitations on the technical solution of the present application. In the absence of conflict, the embodiments of the present application and the technical features in the embodiments can be combined with each other.

[0057] Please refer to Figure 1 , Figure 1 The overall flow diagram of a method for optimizing airflow disturbance control based on a reactor provided in an embodiment of the present application specifically includes the following steps:

[0058] S110: Acquire temperature data and volume data in the reaction furnace, acquire vacuum data in the quartz reaction tube in the reaction furnace, and acquire inert gas control parameters in the reaction furnace.

[0059] S120: Calculating the temperature uniformity coefficient in the reaction furnace through the temperature data;

[0060] During the indium phosphide production process, uneven temperature distribution will trigger thermal convection, resulting in airflow disturbance. Horizontal temperature symmetry and vertical temperature gradient uniformity are important indicators for measuring the uniformity of temperature distribution in the reactor. The horizontal temperature symmetry coefficient in the reactor reflects the consistency of the temperature in the horizontal direction in the reactor, ensuring the uniformity of the indium phosphide production environment and avoiding internal defects of the material caused by temperature difference. The vertical temperature gradient uniformity coefficient reflects the uniformity of the temperature gradient in the vertical direction in the reactor, which directly affects the production rate and quality of indium phosphide. If the vertical temperature gradient is too large, the component atoms, impurities and defects in the melt will not have time to diffuse and will easily aggregate, precipitate and agglomerate, resulting in micro defects and even polycrystalline defects. Similarly, if the vertical temperature gradient is too small, it will easily lead to insufficient power for indium phosphide production, and will also lead to defects such as impurity agglomeration, twins and polycrystalline defects. The temperature uniformity coefficient comprehensively considers the horizontal temperature symmetry and vertical temperature gradient uniformity, which is very important for controlling the airflow disturbance in the reactor. Please refer to Figure 2 , Figure 2 A schematic diagram of a flow chart for calculating the temperature uniformity coefficient in a reaction furnace provided in an embodiment of the present application, wherein the specific steps for calculating the temperature uniformity coefficient in the reaction furnace include:

[0061] Obtain temperature data in the reaction furnace;

[0062] The horizontal temperature symmetry coefficient and vertical temperature gradient uniformity coefficient in the reactor are calculated by temperature data. The vertical temperature gradient uniformity coefficient calculation formula is:

[0063] ;

[0064] In the formula Indicates the distribution along the vertical direction The temperature of each monitoring point, Indicates the distribution along the vertical direction The temperature of each monitoring point, Represents the temperature difference between two adjacent monitoring points distributed in the vertical direction. Indicates the distribution along the vertical direction Monitoring point and The distance between monitoring points, represents the number of monitoring points, Indicates taking the maximum value, It represents the uniformity coefficient of vertical temperature gradient;

[0065] The temperature uniformity coefficient is calculated by the horizontal temperature symmetry coefficient and the vertical temperature gradient uniformity coefficient. The temperature uniformity coefficient calculation formula is:

[0066] ;

[0067] In the formula represents the horizontal temperature symmetry coefficient, represents the vertical temperature gradient uniformity coefficient, represents the adjustment factor, It represents the temperature uniformity coefficient;

[0068] In the process of preparing indium phosphide, the horizontal temperature symmetry in the reactor is crucial to reducing airflow disturbance. Uniform horizontal temperature distribution can prevent lateral convection caused by temperature difference, thereby reducing airflow disturbance and ensuring that indium phosphide is heated evenly during the generation process. This keeps its generation rate consistent across the solid-liquid interface, helps reduce internal defects and stress in the material, and ultimately obtains indium phosphide material with good internal structure and electrical properties. The calculation formula for the horizontal temperature symmetry coefficient is:

[0069] ;

[0070] In the formula and Indicates The temperature of two monitoring points symmetrically along the central axis of the solid-liquid interface is represents the number of monitoring point combinations symmetrical along the central axis of the solid-liquid interface, Represents the horizontal temperature symmetry coefficient.

[0071] S130: Calculating the vacuum degree fluctuation coefficient in the quartz reaction tube according to the vacuum degree data;

[0072] The stability of the indium phosphide production environment can be measured by the vacuum fluctuation coefficient in the quartz reaction tube. When the vacuum fluctuation coefficient is large, it means that the vacuum in the quartz reaction tube is unstable, resulting in fluctuations in the atmosphere conditions at the solid-liquid interface of indium phosphide, which in turn affects the production rate and quality of indium phosphide. At the same time, the fluctuation of vacuum will cause changes in airflow, interfere with the temperature and solute distribution during the production of indium phosphide, and cause uneven internal structure of the material and defects. Therefore, maintaining a low vacuum fluctuation coefficient is crucial to achieving a stable airflow environment and high-quality indium phosphide production. The specific steps for calculating the vacuum fluctuation coefficient in the quartz reaction tube include:

[0073] Obtaining vacuum degree data in the quartz reaction tube in the reaction furnace;

[0074] The vacuum fluctuation coefficient in the quartz reaction tube is calculated using the vacuum data. The calculation formula for the vacuum fluctuation coefficient is:

[0075] ;

[0076] In the formula Indicates the average vacuum degree in the quartz reaction tube, Indicates the quartz reaction tube The vacuum degree of each monitoring point, represents the number of monitoring points, Indicates the vacuum fluctuation coefficient.

[0077] S140: calculating the airflow disturbance index in the reaction furnace by using the temperature uniformity coefficient and the vacuum degree fluctuation coefficient, and adjusting the inert gas control parameter by using the airflow disturbance index in combination with the reaction furnace volume data;

[0078] With the rapid development of application demands such as optoelectronics and microelectronic devices, higher requirements are also put forward for the development of indium phosphide materials, mainly focusing on the following aspects:

[0079] (1) InP substrate materials with low dislocation density. Thermal stress is the main cause of dislocations in the process of indium phosphide material generation. Only by reducing or eliminating thermal stress as much as possible can the generation of dislocations be effectively reduced. The shape of the solid-liquid interface in the process of indium phosphide generation reflects the heat transfer in the generation process, which mainly depends on the thermal field conditions of indium phosphide generation. Airflow disturbances will change the thermal field conditions in the reactor. Therefore, controlling airflow disturbances is an important prerequisite for preparing low dislocation density InP materials.

[0080] (2) Highly doped InP substrate material. When generating indium phosphide material, sulfur (S) and tin (Sn) are generally used as N-type dopants, zinc (Zn) as P-type dopant, and iron (Fe) as semi-insulating dopant. Among them, sulfur (S) and zinc (Zn) have obvious impurity hardening effect in indium phosphide, so it is relatively easy to generate low dislocation indium phosphide material. Tin (Sn) and iron (Fe) have no obvious impurity hardening effect and have no obvious effect on reducing dislocations. Through reasonable control of generation conditions, indium phosphide materials with low dislocation density can also be generated, but these are all based on a certain doping level. When the doping concentration is too high, airflow disturbance will cause excessive melt convection, which will lead to impurity precipitation. Indium phosphide is prone to micro-defects, twins and even polycrystalline phenomena. Therefore, when generating highly doped indium phosphide materials, it is necessary to take into account relevant factors such as electrical properties, defect levels, and crystallization rate, and make reasonable control of airflow disturbances in the reactor;

[0081] (3) Large-diameter InP substrate material. Since indium phosphide has a high dissociation pressure (about 2.75 MPa) near its melting point (1335±7K), its critical shear stress (CRSS) and interlayer stacking fault energy are relatively low, and it is easy to produce twins. Therefore, reducing the generation of twins and generating large-diameter indium phosphide materials are the key points of indium phosphide generation technology research. Increasing the diameter of indium phosphide will inevitably increase its generation space, thereby increasing the convection effect and causing more serious airflow disturbances.

[0082] In the process of preparing indium phosphide, indium and phosphorus are heated to different temperatures. The larger the contact area between the indium melt and the phosphorus gas, the faster the synthesis speed. In this process, the temperature and pressure in the reactor need to be precisely controlled to ensure the proper reaction of indium and phosphorus and the smooth generation of indium phosphide. Air flow disturbance will change the contact conditions between the melt and the gas, thereby affecting the generation rate and structural integrity of indium phosphide. At the same time, since the increase in the diameter of indium phosphide material can reduce the manufacturing cost of the device, the increase in the diameter of indium phosphide will inevitably increase its generation space, thereby increasing the convection effect and causing more serious air flow disturbance. Therefore, in the preparation process of indium phosphide, controlling the air flow stability in the reactor is one of the important factors to ensure the generation of high-quality indium phosphide materials. The specific steps for calculating the air flow disturbance index in the reactor include:

[0083] Obtain temperature uniformity coefficient and vacuum degree fluctuation coefficient;

[0084] The airflow disturbance index in the reactor is calculated by the temperature uniformity coefficient and the vacuum fluctuation coefficient. The calculation formula of the airflow disturbance index is:

[0085] ;

[0086] In the formula represents the temperature uniformity coefficient, represents the vacuum degree fluctuation coefficient, represents the temperature uniformity weight, represents the vacuum degree fluctuation weight, represents the airflow disturbance index;

[0087] The inert gas control parameter is an important parameter for controlling the quality of indium phosphide production. Adjusting the inert gas control parameter and then controlling the charging or discharging of the inert gas plays a key role in reducing the airflow disturbance in the reactor. By accurately adjusting the gas volume and gas flow rate of the inert gas, the airflow in the reactor can be stabilized, the fluctuation of the temperature gradient can be reduced, and the indium phosphide production defects caused by airflow disturbance can be avoided. At the same time, by filling the reactor with inert gas, impurities and oxides can be prevented from entering the indium phosphide, the purity of the indium phosphide production environment can be maintained, thereby improving the quality and uniformity of indium phosphide. The specific steps for adjusting the inert gas control parameter include:

[0088] Obtaining gas flow disturbance index, reactor volume data and inert gas control parameters, wherein the inert gas control parameters include inert gas quantity and inert gas flow rate;

[0089] The first pressure data in the reaction furnace and the second pressure data in the reaction tube are obtained, and the amount of inert gas charged or discharged is determined by the first pressure data, the second pressure data and the volume data of the reaction furnace. The inert gas amount calculation formula is:

[0090] ;

[0091] In the formula Indicates the first pressure data in the reactor, represents the second pressure data in the reaction tube, Represents the reactor volume data, Indicates the amount of inert gas. If , then the amount of gas charged into the reactor is of inert gas, if , then the amount of gas discharged from the reactor is of inert gas, if , the current state of the reactor is maintained unchanged;

[0092] The flow rate of inert gas filling or exhaust is determined by the airflow disturbance index. The inert gas flow rate calculation formula is:

[0093] ;

[0094] In the formula Indicates the initial flow rate of the inert gas set in the reactor. represents the airflow disturbance index, It represents the inert gas flow rate, where the initial inert gas flow rate is an important parameter for controlling the quality of indium phosphide production and can be obtained from the reactor product technical manual.

[0095] Please refer to Figure 3 , Figure 3 A schematic structural diagram of an airflow disturbance optimization control system based on a reactor provided in an embodiment of the present application includes:

[0096] The data acquisition module 210 is used to acquire the temperature data and the volume data of the reaction furnace, acquire the vacuum degree data in the quartz reaction tube in the reaction furnace, and acquire the inert gas control parameters in the reaction furnace;

[0097] A temperature uniformity coefficient calculation module 220 is used to calculate the temperature uniformity coefficient in the reaction furnace through temperature data;

[0098] A vacuum degree fluctuation coefficient calculation module 230 is used to calculate the vacuum degree fluctuation coefficient in the quartz reaction tube through the vacuum degree data;

[0099] The airflow disturbance index calculation module 240 is used to calculate the airflow disturbance index in the reaction furnace through the temperature uniformity coefficient and the vacuum degree fluctuation coefficient, and adjust the inert gas control parameters through the airflow disturbance index combined with the reaction furnace volume data.

[0100] In the embodiment of the present application, the temperature uniformity coefficient calculation module 220 is used to calculate the temperature uniformity coefficient in the reaction furnace through temperature data. The specific steps of calculating the temperature uniformity coefficient in the reaction furnace include:

[0101] Obtain temperature data in the reaction furnace;

[0102] The horizontal temperature symmetry coefficient and vertical temperature gradient uniformity coefficient in the reactor are calculated by temperature data. The vertical temperature gradient uniformity coefficient calculation formula is:

[0103] ;

[0104] In the formula Indicates the distribution along the vertical direction The temperature of each monitoring point, Indicates the distribution along the vertical direction The temperature of each monitoring point, Represents the temperature difference between two adjacent monitoring points distributed in the vertical direction. Indicates the distribution along the vertical direction Monitoring point and The distance between monitoring points, represents the number of monitoring points, Indicates taking the maximum value, It represents the uniformity coefficient of vertical temperature gradient;

[0105] The temperature uniformity coefficient is calculated by the horizontal temperature symmetry coefficient and the vertical temperature gradient uniformity coefficient. The temperature uniformity coefficient calculation formula is:

[0106] ;

[0107] In the formula represents the horizontal temperature symmetry coefficient, represents the vertical temperature gradient uniformity coefficient, represents the adjustment factor, It represents the temperature uniformity coefficient;

[0108] The calculation formula of horizontal temperature symmetry coefficient is:

[0109] ;

[0110] In the formula and Indicates The temperature of two monitoring points symmetrically along the central axis of the solid-liquid interface is represents the number of monitoring point combinations symmetrical along the central axis of the solid-liquid interface, Represents the horizontal temperature symmetry coefficient.

[0111] In the embodiment of the present application, the vacuum degree fluctuation coefficient calculation module 230 is used to calculate the vacuum degree fluctuation coefficient in the quartz reaction tube through the vacuum degree data. The specific steps of calculating the vacuum degree fluctuation coefficient in the quartz reaction tube include:

[0112] Obtaining vacuum degree data in the quartz reaction tube in the reaction furnace;

[0113] The vacuum fluctuation coefficient in the quartz reaction tube is calculated using the vacuum data. The calculation formula for the vacuum fluctuation coefficient is:

[0114] ;

[0115] In the formula Indicates the average vacuum degree in the quartz reaction tube, Indicates the quartz reaction tube The vacuum degree of each monitoring point, represents the number of monitoring points, Indicates the vacuum fluctuation coefficient.

[0116] In the embodiment of the present application, the airflow disturbance index calculation module 240 is used to calculate the airflow disturbance index in the reactor by using the temperature uniformity coefficient and the vacuum degree fluctuation coefficient, and adjust the inert gas control parameter by combining the airflow disturbance index with the reactor volume data. The specific steps of calculating the airflow disturbance index in the reactor include:

[0117] Obtain temperature uniformity coefficient and vacuum degree fluctuation coefficient;

[0118] The airflow disturbance index in the reactor is calculated by the temperature uniformity coefficient and the vacuum fluctuation coefficient. The calculation formula of the airflow disturbance index is:

[0119] ;

[0120] In the formula represents the temperature uniformity coefficient, represents the vacuum degree fluctuation coefficient, represents the temperature uniformity weight, represents the vacuum degree fluctuation weight, represents the airflow disturbance index;

[0121] Controlling the inert gas filling or exhaust plays a key role in controlling the airflow disturbance in the reactor. By accurately adjusting the gas volume and gas flow rate of the inert gas, the airflow in the reactor can be stabilized, the fluctuation of the temperature gradient can be reduced, and the indium phosphide generation defects caused by airflow disturbance can be avoided. At the same time, the inert gas flow can effectively remove impurities or reaction by-products that may be generated in the furnace, maintain the purity of the generation environment, and thus improve the quality and uniformity of indium phosphide. The specific steps for adjusting the inert gas control parameters include:

[0122] Obtaining gas flow disturbance index, reactor volume data and inert gas control parameters, wherein the inert gas control parameters include inert gas quantity and inert gas flow rate;

[0123] The first pressure data in the reaction furnace and the second pressure data in the reaction tube are obtained, and the amount of inert gas charged or discharged is determined by the first pressure data, the second pressure data and the volume data of the reaction furnace. The inert gas amount calculation formula is:

[0124] ;

[0125] In the formula Indicates the first pressure data in the reactor, represents the second pressure data in the reaction tube, Represents the reactor volume data, Indicates the amount of inert gas. If , then the amount of gas charged into the reactor is of inert gas, if , then the amount of gas discharged from the reactor is of inert gas, if , the current state of the reactor is maintained unchanged;

[0126] The flow rate of inert gas filling or exhaust is determined by the airflow disturbance index. The inert gas flow rate calculation formula is:

[0127] ;

[0128] In the formula Indicates the initial flow rate of the inert gas set in the reactor. represents the airflow disturbance index, It represents the inert gas flow rate, where the initial inert gas flow rate can be obtained from the reactor product technical manual.

[0129] The above-mentioned parameters and steps for each unit module to realize the corresponding functions in the airflow disturbance optimization control system based on the reactor in the embodiment of the present application can refer to the parameters and steps in the embodiment of the airflow disturbance optimization control method based on the reactor above, and will not be repeated here.

[0130] Please refer to Figure 4 , Figure 4 A structural schematic diagram of an electronic device for executing a method for optimizing airflow disturbance control based on a reactor provided in an embodiment of the present application, the electronic device may include: at least one processor 310, such as a CPU, at least one communication interface 320, at least one memory 330 and at least one communication bus 340, wherein the communication bus 340 is used to realize direct connection and communication between these components, wherein the communication interface 320 of the device in the embodiment of the present application is used to communicate signaling or data with other node devices, the memory 330 may be a high-speed RAM memory, or a non-volatile memory (non-volatile memory), such as at least one disk memory, the memory 330 may optionally be at least one storage device located away from the aforementioned processor, the memory 330 stores computer-readable instructions, and when the computer-readable instructions are executed by the processor 310, the electronic device executes the above Figure 1 The method process is shown.

[0131] This embodiment provides a computer-readable storage medium on which a rewritable computer program is stored. When the computer program is run on a computer device, the computer device executes the above-mentioned reactor-based airflow disturbance optimization control method.

[0132] For example, the computer readable storage medium can be a read-only memory (ROM), a random access memory (RAM), a compact disc (CD-ROM), a magnetic tape, a floppy disk, an optical data storage device, etc.

Claims

1. A method for optimizing the control of airflow disturbances in a reactor, characterized in that: The steps include: Acquire temperature data and volume data in the reaction furnace, acquire vacuum data in the quartz reaction tube in the reaction furnace, and acquire inert gas control parameters in the reaction furnace; Calculate the temperature uniformity coefficient in the reactor through temperature data; Calculate the vacuum fluctuation coefficient in the quartz reaction tube through the vacuum data; The airflow disturbance index in the reactor is calculated by the temperature uniformity coefficient and the vacuum fluctuation coefficient, and the inert gas control parameters are adjusted by the airflow disturbance index combined with the reactor volume data; The specific steps of calculating the temperature uniformity coefficient in the reaction furnace include: Obtain temperature data in the reaction furnace; The horizontal temperature symmetry coefficient and vertical temperature gradient uniformity coefficient in the reactor are calculated by temperature data. The vertical temperature gradient uniformity coefficient calculation formula is: ； In the formula Indicates the distribution along the vertical direction The temperature of each monitoring point, Indicates the distribution along the vertical direction The temperature of each monitoring point, Represents the temperature difference between two adjacent monitoring points distributed in the vertical direction. Indicates the distribution along the vertical direction Monitoring point and The distance between monitoring points, represents the number of monitoring points, Indicates taking the maximum value, It represents the uniformity coefficient of vertical temperature gradient; The temperature uniformity coefficient is calculated by the horizontal temperature symmetry coefficient and the vertical temperature gradient uniformity coefficient. The temperature uniformity coefficient calculation formula is: ； In the formula represents the horizontal temperature symmetry coefficient, represents the vertical temperature gradient uniformity coefficient, represents the adjustment factor, It represents the temperature uniformity coefficient; The calculation formula of the horizontal temperature symmetry coefficient is: ； In the formula and Indicates The temperature of two monitoring points symmetrically along the central axis of the solid-liquid interface is represents the number of monitoring point combinations symmetrical along the central axis of the solid-liquid interface, represents the horizontal temperature symmetry coefficient; The specific steps of calculating the vacuum degree fluctuation coefficient in the quartz reaction tube include: Obtaining vacuum degree data in the quartz reaction tube in the reaction furnace; The vacuum fluctuation coefficient in the quartz reaction tube is calculated using the vacuum data. The calculation formula for the vacuum fluctuation coefficient is: ； In the formula Indicates the average vacuum degree in the quartz reaction tube, Indicates the quartz reaction tube The vacuum degree of each monitoring point, represents the number of monitoring points, Indicates the vacuum fluctuation coefficient; The specific steps of calculating the airflow disturbance index in the reactor include: Obtain temperature uniformity coefficient and vacuum degree fluctuation coefficient; The airflow disturbance index in the reactor is calculated by the temperature uniformity coefficient and the vacuum fluctuation coefficient. The calculation formula of the airflow disturbance index is: ； In the formula represents the temperature uniformity coefficient, represents the vacuum degree fluctuation coefficient, represents the temperature uniformity weight, represents the vacuum degree fluctuation weight, represents the airflow disturbance index; The specific steps of adjusting the inert gas control parameters include: Obtaining gas flow disturbance index, reactor volume data and inert gas control parameters, wherein the inert gas control parameters include inert gas quantity and inert gas flow rate; The first pressure data in the reaction furnace and the second pressure data in the reaction tube are obtained, and the amount of inert gas charged or discharged is determined by the first pressure data, the second pressure data and the volume data of the reaction furnace. The inert gas amount calculation formula is: ； In the formula Indicates the first pressure data in the reactor, represents the second pressure data in the reaction tube, Represents the reactor volume data, Indicates the amount of inert gas. If , then the amount of gas charged into the reactor is of inert gas, if , then the amount of gas discharged from the reactor is of inert gas, if , the current state of the reactor is maintained unchanged; The flow rate of inert gas filling or exhaust is determined by the airflow disturbance index. The inert gas flow rate calculation formula is: ； In the formula Indicates the initial flow rate of the inert gas set in the reactor. represents the airflow disturbance index, Indicates the inert gas flow rate.

2. The airflow disturbance optimization control system based on the reactor is implemented based on the airflow disturbance optimization control method based on the reactor according to claim 1, characterized in that: The system comprises: A data acquisition module is used to acquire temperature data and volume data in the reaction furnace, vacuum degree data in the quartz reaction tube in the reaction furnace, and inert gas control parameters in the reaction furnace; A temperature uniformity coefficient calculation module is used to calculate the temperature uniformity coefficient in the reaction furnace through temperature data; A vacuum degree fluctuation coefficient calculation module is used to calculate the vacuum degree fluctuation coefficient in the quartz reaction tube through vacuum degree data; The airflow disturbance index calculation module is used to calculate the airflow disturbance index in the reactor through the temperature uniformity coefficient and the vacuum fluctuation coefficient, and adjust the inert gas control parameters through the airflow disturbance index combined with the reactor volume data.

3. An electronic device, comprising: A processor and a memory, wherein the memory stores a computer program that can be called by the processor; characterized in that the processor executes the airflow disturbance optimization control method based on the reactor as claimed in claim 1 by calling the computer program stored in the memory.

4. A computer-readable storage medium, characterized in that: Instructions are stored, and when the instructions are run on a computer, the computer is caused to execute the airflow disturbance optimization control method based on a reactor as claimed in claim 1.

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