A top-emitting large-aperture fully-filled coherent light VCSEL and its preparation method

Abstract

The present invention discloses a top-emitting large aperture fully filled coherent light VCSEL, comprising: a top-emitting large aperture VCSEL, a fully filled light phase control crystal and a high reflection film arranged in sequence from bottom to top; a regular hexagonal table is formed on the top of the top-emitting large aperture VCSEL, a regular hexagonal porous P-type metal electrode is provided on the upper surface of the regular hexagonal table, and a regular hexagonal light exit hole is provided on the regular hexagonal porous P-type metal electrode; a regular hexagonal air groove of the same shape is etched on the upper surface of the fully filled light phase control crystal corresponding to the position of the regular hexagonal light exit hole. The present invention effectively solves the problem of no light in the center of the light exit surface and poor far-field beam quality caused by uneven current injection of the top-emitting large aperture VCSEL, while avoiding supermode competition loss and realizing in-phase mode output. Compared with a multi-laser unit array, a single large aperture VCSEL has higher stability.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor lasers, and in particular to a top-emitting large-aperture fully-filled coherent light VCSEL and a preparation method thereof. Background Art

[0002] VCSEL has the characteristics of low threshold, single longitudinal mode, tunable wavelength, and easy 2-D array. It is widely used in data transmission, optical interconnection, gas detection, optical quantum computing and other fields, and has become the most ideal light source with core competitiveness in the field.

[0003] Large-aperture top-emitting VCSELs often have the problem of uneven injection current, which results in no light in the center of the light-emitting hole and poor beam quality. Weakly coupled VCSEL arrays, which mainly use evanescent wave coupling and leaky wave coupling, often limit the number of array units and operate in the reverse mode, which has limited improvement on device power and beam quality. In addition, supermode competition in the laser array will further cause power loss. Summary of the invention

[0004] In view of the deficiencies in the prior art, the present invention provides a top-emitting large-aperture fully-filled coherent light VCSEL and a preparation method thereof.

[0005] The present invention discloses a top-emitting large-aperture fully-filled coherent light VCSEL, comprising: a top-emitting large-aperture VCSEL, a fully-filled light phase control crystal and a high-reflection film arranged in sequence from bottom to top;

[0006] A regular hexagonal table is formed on the top of the top-emitting large-aperture VCSEL, a regular hexagonal porous P-type metal electrode is provided on the upper surface of the regular hexagonal table, and a regular hexagonal light-emitting hole is provided on the regular hexagonal porous P-type metal electrode;

[0007] The lower surface of the fully filled optical phase regulation crystal is bonded to the upper surface of the regular hexagonal porous P-type metal electrode, and the upper surface of the fully filled optical phase regulation crystal is etched with regular hexagonal air grooves of the same shape corresponding to the positions of the regular hexagonal light output holes; wherein the thickness of the fully filled optical phase regulation crystal satisfies the Talbot distance of the regular hexagonal light output hole arrangement.

[0008] As a further improvement of the present invention, the top-emitting large-aperture VCSEL includes a substrate, an N-type DBR layer, an N-type spacer layer, an active layer, a P-type spacer layer, a P-type DBR layer and a P-type cap layer formed in sequence on the upper surface of the substrate, and an N-type metal electrode formed on the lower surface of the substrate, and the P-type cap layer is etched downward to form the regular hexagonal table; the side wall of the regular hexagonal table is covered with an insulating passivation layer, the side length of the regular hexagonal table is 50μm to 100μm, and the height is 2.8μm to 3.8μm.

[0009] As a further improvement of the present invention, the regular hexagonal porous P-type metal electrode is distributed in a regular hexagon as a whole, and the side length of the regular hexagonal porous P-type metal electrode is the same as the side length of the regular hexagonal table; the side length of the regular hexagonal light-emitting hole is 5μm~10μm, the period is three times the side length of the regular hexagonal light-emitting hole, and the number of arrays is 30~60.

[0010] As a further improvement of the present invention, the fully filled optical phase control crystal is a regular hexagon, and the side length of the fully filled optical phase control crystal is the same as the side length of the regular hexagonal VCSEL table and the side length of the regular hexagonal porous P-type metal electrode; the thickness Z of the fully filled optical phase control crystal is t The Talbot distance formula that satisfies the regular hexagonal light-emitting hole arrangement is:

[0011] Z t =3nd 2 / 2λ

[0012] In the formula, n is the material equivalent refractive index of the fully filled optical phase control crystal, d is the array period of the regular hexagonal light output holes, and λ is the wavelength of free space light.

[0013] As a further improvement of the present invention, the groove depth H of the regular hexagonal air groove satisfies the formula:

[0014] H=Δφ·λ / 2π·Δn

[0015] In the formula, Δφ is the phase difference of the supermode light field at different positions inside the fully filled optical phase control crystal, λ is the wavelength of free space light, and Δn is the equivalent refractive index difference between the fully filled optical phase control crystal and the regular hexagonal air groove.

[0016] As a further improvement of the present invention, the high-reflection film is plated on the upper surface of the fully-filled optical phase control crystal. The high-reflection film is alternately grown SiO2 layers and Al2O3 layers, each layer is 50nm to 150nm thick, and the reflectivity is 99.5% to 99.9%.

[0017] As a further improvement of the present invention, the substrate is selected from: gallium arsenide, indium phosphide or gallium nitride.

[0018] As a further improvement of the present invention, the N-type DBR layer is an AlGaAs layer with high and low aluminum components grown alternately, each layer has a thickness of 50nm to 70nm, a total of 30 to 40 pairs, and a reflectivity of 99.7% to 100%; the P-type DBR layer is an AlGaAs layer with high and low aluminum components grown alternately, each layer has a thickness of 50nm to 70nm, a total of 20 to 30 pairs, and a reflectivity of 80% to 90%.

[0019] As a further improvement of the present invention, the insulating passivation layer is selected from one of silicon nitride and silicon oxide, and the thickness of the insulating passivation layer is 200nm to 500nm; the P-type metal electrode includes one or more of titanium, gold and platinum; and the N-type metal electrode includes one or more of gold, germanium and nickel.

[0020] The present invention also discloses a method for preparing a top-emitting large-aperture fully-filled coherent light VCSEL, comprising:

[0021] Selecting a substrate;

[0022] An N-type DBR layer, an N-type spacer layer, an active layer, a P-type spacer layer, a P-type DBR layer and a P-type cap layer are sequentially deposited on the upper surface of the substrate;

[0023] Etching a regular hexagonal table;

[0024] Depositing an insulating passivation layer on the sidewalls of the regular hexagonal mesas;

[0025] Sputtering a regular hexagonal porous P-type metal electrode on the upper surface of the P-type cap layer;

[0026] thinning and polishing the lower surface of the substrate;

[0027] N-type metal electrodes are sputtered on the lower surface of the substrate to obtain a top-emitting large-aperture VCSEL;

[0028] A fully filled optical phase control crystal with a thickness satisfying the Talbot distance is selected, and a plurality of regular hexagonal air grooves are etched on its upper surface;

[0029] Vapor-deposit a high-reflection film on the upper surface of the fully-filled optical phase control crystal;

[0030] A fully filled optical phase control crystal is bonded on the upper surface of the regular hexagonal porous P-type metal electrode.

[0031] Compared with the prior art, the present invention has the following beneficial effects:

[0032] The present invention arranges a top-emitting large-aperture VCSEL with a regular hexagonal table on a substrate, and arranges a regular hexagonal porous P-type metal electrode on the upper surface of the regular hexagonal table. Through the regular hexagonal light-emitting holes inside the regular hexagonal porous P-type metal electrode, a beam of regular hexagonal light is divided into a plurality of regular hexagonal sub-light sources arranged periodically, and a fully-filled light phase control crystal with a preset thickness is used to realize Talbot diffraction coupling of the sub-light sources and a fully-filled light field, and the phase control of the supermode light field is realized through the regular hexagonal air groove inside the fully-filled light phase control crystal, so as to realize the in-phase mode output. The present invention effectively solves the problem of no light in the center of the light-emitting surface and poor far-field beam quality caused by uneven current injection of the top-emitting large-aperture VCSEL, and avoids the instability of the operation of multiple laser units and supermode competition loss; the present invention is not only simple in process and low in cost, but also provides an innovative idea for high-stability, high-power and high-beam-quality devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It is a front view of the top-emitting large-aperture fully-filled coherent light VCSEL disclosed in the present invention;

[0034] Figure 2 It is a front view of the top-emitting large-aperture VCSEL disclosed in the present invention;

[0035] Figure 3 A top view of a top-emitting large-aperture VCSEL disclosed in the present invention;

[0036] Figure 4 A top view of the fully filled optical phase control crystal disclosed in the present invention;

[0037] Figure 5 This is a front view of the fully-filled optical phase control crystal disclosed in the present invention.

[0038] In the figure:

[0039] 1. N-type metal electrode; 2. Substrate; 3. N-type DBR layer; 4. N-type spacer layer; 5. Active layer; 6. P-type spacer layer; 7. P-type DBR layer; 8. P-type cap layer; 9. Regular hexagonal light output hole; 10. High reflection film; 11. Fully filled optical phase control crystal; 12. Regular hexagonal air groove; 13. Regular hexagonal porous P-type metal electrode; 14. Insulating passivation layer. DETAILED DESCRIPTION

[0040] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0041] The present invention is further described in detail below in conjunction with the accompanying drawings:

[0042] like Figures 1 to 5 As shown, the present invention provides a top-emitting large aperture fully filled coherent light VCSEL, comprising: a top-emitting large aperture VCSEL, a fully filled light phase control crystal 11 and a high reflection film 10 arranged in sequence from bottom to top; wherein,

[0043] The top-emitting large-aperture VCSEL of the present invention comprises a substrate 2, an N-type DBR layer 3, an N-type spacer layer 4, an active layer 5, a P-type spacer layer 6, a P-type DBR layer 7 and a P-type cap layer 8 which are sequentially formed on the upper surface of the substrate 2, and an N-type metal electrode 1 which is formed on the lower surface of the substrate 2; the substrate 2 is gallium arsenide, indium phosphide or gallium nitride, preferably a GaAs substrate; the N-type DBR layer 3 is an AlGaAs layer with high and low aluminum components grown alternately, each layer has a thickness of 50nm-70nm, there are 30-40 pairs in total, and the reflectivity is 99.7%-100%; the N-type spacer layer 4 is an AlGaAs layer, the active layer 5 is a three-quantum well InGaAs layer, the P-type spacer layer 6 is an AlGaAs layer, the P-type DBR layer 7 is an AlGaAs layer with high and low aluminum components grown alternately, the reflectivity is 80%-90%; and the P-type cap layer 8 is a highly doped GaAs layer. Etching downward from the P-type cap layer 8 to form a regular hexagonal table, preferably the regular hexagonal table is etched from top to bottom to the N-type DBR layer 3, the side length of the regular hexagonal VCSEL table is 50μm to 100μm, and the height is 2.8μm to 3.8μm. The side wall of the regular hexagonal table is covered with an insulating passivation layer 14, and the upper surface of the regular hexagonal table is provided with a regular hexagonal porous P-type metal electrode 13, and the regular hexagonal porous P-type metal electrode 13 is provided with a regular hexagonal light exit hole 9; at the same time, the P-type metal electrode 13 is also formed on the outside of the insulating passivation layer 14, such as Figures 1 to 3As shown. Preferably, the regular hexagonal porous P-type metal electrode 13 on the upper surface of the regular hexagonal table is distributed in a regular hexagon as a whole, and the side length of the regular hexagonal porous P-type metal electrode 13 on the upper surface of the regular hexagonal table is the same as the side length of the regular hexagonal table; the side length of the regular hexagonal light-emitting hole 9 is 5μm to 10μm, the period is three times the side length of the regular hexagonal light-emitting hole 9, and the number of arrays is 30 to 60. Preferably, the insulating passivation layer 14 can be selected from one of silicon nitride or silicon oxide, and the thickness of the insulating passivation layer is 200nm to 500nm; the regular hexagonal porous P-type metal electrode 13 includes one or more of titanium, gold and platinum; the N-type metal electrode 1 includes one or more of gold, germanium and nickel.

[0044] The lower surface of the fully filled optical phase control crystal 11 of the present invention is bonded to the upper surface of the regular hexagonal porous P-type metal electrode 13; wherein the fully filled optical phase control crystal 11 of the present invention is a regular hexagon, the side length is the same as the side length of the regular hexagonal porous P-type metal electrode 13, and the thickness Z t The Talbot distance formula that satisfies the arrangement of 9 regular hexagonal light-emitting holes is:

[0045] Z t =3nd 2 / 2λ

[0046] Wherein, n is the material equivalent refractive index of the fully filled optical phase control crystal 11, d is the array period of the regular hexagonal light output holes 9, and λ is the wavelength of free space light.

[0047] The fully filled optical phase control crystal 11 of the present invention contains a plurality of regular hexagonal air grooves 12, whose shape, size and distribution perpendicular to the light emitting surface are the same as those of the regular hexagonal light emitting hole 9, and the depth of the regular hexagonal air grooves 12 satisfies the formula:

[0048] H=Δφ·λ / 2π·Δn

[0049] Wherein, Δφ is the phase difference of the supermode light field at different positions inside the fully filled optical phase control crystal 11, λ is the wavelength of the free space light, and Δn is the equivalent refractive index difference between the fully filled optical phase control crystal 11 and the regular hexagonal air groove 12.

[0050] The upper surface of the fully filled optical phase control crystal 11 of the present invention is coated with a high reflection film 10, which is an alternately grown SiO2 layer and Al2O3 layer, each layer is 50nm to 150nm thick, with a total of 30 to 35 pairs, and a reflectivity of 99% to 99.5%.

[0051] The present invention provides a method for preparing a top-emitting large-aperture fully-filled coherent light VCSEL, comprising:

[0052] Step 1, selecting a substrate 2;

[0053] Step 2, depositing an N-type DBR layer 3, an N-type spacer layer 4, an active layer 5, a P-type spacer layer 6, a P-type DBR layer 7 and a P-type cap layer 8 on the upper surface of the substrate 2 in sequence;

[0054] Step 3, etching a regular hexagonal table;

[0055] Step 4, depositing an insulating passivation layer 14 on the sidewalls of the regular hexagonal mesas;

[0056] Step 5, sputtering a regular hexagonal porous P-type metal electrode 13 on the upper surface of the P-type cap layer;

[0057] Step 6, thinning and polishing the lower surface of the substrate 2;

[0058] Step 7, sputtering an N-type metal electrode 1 on the lower surface of the substrate 2 to obtain a top-emitting large-aperture VCSEL;

[0059] Step 8, selecting a fully filled optical phase control crystal 11 with a thickness satisfying the Talbot distance, and etching a plurality of regular hexagonal air grooves 12 on its upper surface;

[0060] Step 9, evaporating a high-reflection film 10 on the upper surface of the fully filled optical phase control crystal 11;

[0061] Step 10: bonding the fully filled optical phase control crystal 11 on the upper surface of the regular hexagonal porous P-type metal electrode 13 .

[0062] Example:

[0063] Taking a gallium arsenide semiconductor laser with an operating wavelength of 980nm as an example, its preparation method includes:

[0064] S1, selecting substrate 2 as a GaAs substrate;

[0065] S2, using metal organic compound vapor deposition (MOCVD) or molecular beam epitaxy (MBE) to deposit N-type DBR layer 3 from bottom to top on the upper surface of substrate 2 to form an alternately grown Al 0.9～0.95 GaAs / Al 0.1～0.15 GaAs, doping concentration 2e 18 cm -3 , with a thickness of 50nm to 70nm, a total of 30 to 40 pairs; the N-type spacer layer 4 is undoped Al 0.6～0.7 GaAs, thickness is 80nm~100nm; active layer 5 is triple quantum well In 0.1～0.12 GaAs layer, thickness is 5nm~10nm; P-type spacer layer 6 is undoped Al 0.6～0.7 GaAs, with a thickness of 80nm to 90nm; the P-type DBR layer 7 is an alternately grown Al 0.1～0.15 GaAs / Al 0.9～0.95GaAs, doping concentration 2e 18 cm -3 , with a thickness of 50nm to 70nm, a total of 20 to 30 pairs; the P-type cap layer 8 is highly doped GaAs with a doping concentration of 1e 19 cm -3 , thickness 100nm~200nm;

[0066] S3, using a spinning machine to evenly coat positive photoresist, using an ultraviolet photolithography machine exposure method, and after development, obtaining a regular hexagonal VCSEL table photoresist pattern on the upper surface of the P-type cap layer 8, and then etching using an inductively coupled plasma method to obtain a regular hexagonal VCSEL table; wherein the regular hexagonal VCSEL table has a side length of 50μm to 100μm and a height of 2.8μm to 3.8μm;

[0067] S4, after degumming, an insulating passivation layer 14 is deposited by plasma chemical vapor deposition, using dielectric materials such as SiO2 or Si3N4, with a thickness of 200nm to 500nm;

[0068] S5, using a spinning machine to evenly coat positive photoresist, using a UV photolithography machine to expose the upper surface of the insulating passivation layer 14 on the top of the regular hexagonal VCSEL table to obtain a photoresist-free regular hexagonal VCSEL table pattern, and then using an inductively coupled plasma method to etch the insulating passivation layer 14 of the regular hexagonal VCSEL table;

[0069] S6, using a spinning machine to uniformly coat negative photoresist, and using an ultraviolet photolithography machine exposure method to obtain a photoresist-free regular hexagonal light output hole 9 pattern on the upper surface of the P-type cover layer on the top of the regular hexagonal VCSEL table, the regular hexagonal light output hole 9 has a side length of 5 μm to 10 μm, a period of three times the side length of the regular hexagonal light output hole 9, and an array number of 30 to 60;

[0070] S7, sputtering and peeling off on the top of the regular hexagonal VCSEL table by magnetron sputtering to form a regular hexagonal porous P metal electrode 13, the metals sputtered in sequence are: titanium metal 40nm ~ 50nm, platinum metal 40nm ~ 50nm, gold metal 300nm ~ 400nm;

[0071] S8, using a thinning machine and a polishing machine to thin and polish the lower surface of the GaAs substrate 2, and the remaining substrate thickness is 100 μm to 120 μm;

[0072] S9, sputtering an N-type metal electrode 1 on the lower surface of the GaAs substrate 2 by magnetron sputtering, sputtering in sequence: 20nm-30nm of nickel metal, 90nm-100nm of gold-germanium alloy metal, and 300nm-400nm of gold metal;

[0073] S10, selecting a fully filled optical phase control crystal 11 with a thickness satisfying the Talbot distance, and etching a plurality of regular hexagonal air grooves 12 on its upper surface by an inductively coupled plasma method, wherein the side length of the regular hexagonal air grooves 12 is 5 μm to 10 μm, the period is three times the side length of the regular hexagonal light exit hole 9, and the number of arrays is 30 to 60;

[0074] S11, using an electron beam evaporation method, a high-reflection film 10 is deposited on the upper surface of the fully filled optical phase control crystal 11, wherein the high-reflection film 10 is an alternately grown SiO2 layer and an Al2O3 layer, each layer having a thickness of 50nm to 150nm, and a total of 30 to 35 pairs;

[0075] S12, bonding the fully filled optical phase control crystal 11 on the upper surface of the regular hexagonal porous P-type metal electrode 13.

[0076] The advantages of the present invention are:

[0077] The present invention arranges a regular hexagonal porous P-type metal electrode on the surface of a large-aperture regular hexagonal VCSEL table, and divides a regular hexagonal light beam into a plurality of regular hexagonal sub-light sources arranged periodically through the regular hexagonal light-emitting holes inside the regular hexagonal porous P-type metal electrode. t The fully filled optical phase control crystal realizes Talbot diffraction coupling of sub-light sources and fully filled light fields, and the non-zero phase in the supermode light field is controlled by the regular hexagonal air groove inside the fully filled optical phase control crystal, so as to realize the zero-phase in-phase mode output. The present invention effectively solves the problem of no light in the center of the light-emitting surface and poor far-field beam quality caused by uneven current injection of top-emitting large-aperture VCSEL, and avoids the instability of multi-laser unit operation and supermode competition loss; the present invention not only has a simple process and low cost, but also provides an innovative idea for high-stability, high-power and high-beam quality devices.

[0078] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A top-emitting large aperture fully filled coherent light VCSEL, characterized in that: include: The top-emitting large-aperture VCSEL, fully-filled optical phase control crystal and high-reflection film are arranged in sequence from bottom to top; A regular hexagonal table is formed on the top of the top-emitting large-aperture VCSEL, a regular hexagonal porous P-type metal electrode is provided on the upper surface of the regular hexagonal table, and a regular hexagonal light-emitting hole is provided on the regular hexagonal porous P-type metal electrode; The lower surface of the fully filled optical phase control crystal is bonded to the upper surface of the regular hexagonal porous P-type metal electrode, and the upper surface of the fully filled optical phase control crystal is etched with a regular hexagonal air groove of the same shape corresponding to the position of the regular hexagonal light exit hole; wherein the thickness Z of the fully filled optical phase control crystal is t The formula of the Talbot distance that satisfies the regular hexagonal light-emitting hole arrangement is: Z t =3nd 2 / 2λ Wherein, n is the material equivalent refractive index of the fully filled optical phase control crystal, d is the array period of the regular hexagonal light output holes, and λ is the wavelength of free space light; The groove depth H of the regular hexagonal air groove satisfies the formula: H=Dψ · λ / 2π · Δn In the formula, Δφ is the phase difference of the supermode light field at different positions inside the fully filled optical phase control crystal, λ is the wavelength of free space light, and Δn is the equivalent refractive index difference between the fully filled optical phase control crystal and the regular hexagonal air groove.

2. The top-emitting large aperture fully filled coherent light VCSEL according to claim 1, characterized in that: The top-emitting large-aperture VCSEL comprises a substrate, an N-type DBR layer, an N-type spacer layer, an active layer, a P-type spacer layer, a P-type DBR layer and a P-type cap layer sequentially formed on the upper surface of the substrate, and an N-type metal electrode formed on the lower surface of the substrate, and the P-type cap layer is etched downward to form the regular hexagonal table; the side wall of the regular hexagonal table is coated with an insulating passivation layer, the side length of the regular hexagonal table is 50μm to 100μm, and the height is 2.8μm to 3.8μm.

3. The top-emitting large aperture fully filled coherent light VCSEL according to claim 1, characterized in that: The regular hexagonal porous P-type metal electrode is distributed in a regular hexagon as a whole, and the side length of the regular hexagonal porous P-type metal electrode is the same as the side length of the regular hexagonal table; the side length of the regular hexagonal light-emitting hole is 5μm~10μm, the period is three times the side length of the regular hexagonal light-emitting hole, and the number of arrays is 30~60.

4. The top-emitting large aperture fully filled coherent light VCSEL according to claim 1, characterized in that: The fully filled optical phase regulation crystal is a regular hexagon, and the side length of the fully filled optical phase regulation crystal is the same as the side length of the regular hexagonal table and the side length of the regular hexagonal porous P-type metal electrode.

5. The top-emitting large aperture fully filled coherent light VCSEL according to claim 1, characterized in that: The high-reflection film is plated on the upper surface of the fully-filled optical phase regulation crystal. The high-reflection film is an alternately grown SiO2 layer and an Al2O3 layer, each layer has a thickness of 50nm to 150nm, and a reflectivity of 99.5% to 99.9%.

6. The top-emitting large aperture fully filled coherent light VCSEL according to claim 2, characterized in that: The substrate is selected from: gallium arsenide, indium phosphide or gallium nitride.

7. The top-emitting large aperture fully filled coherent light VCSEL according to claim 2, characterized in that: The N-type DBR layer is an AlGaAs layer with high and low aluminum components grown alternately, each layer has a thickness of 50nm to 70nm, a total of 30 to 40 pairs, and a reflectivity of 99.7% to 100%; the P-type DBR layer is an AlGaAs layer with high and low aluminum components grown alternately, each layer has a thickness of 50nm to 70nm, a total of 20 to 30 pairs, and a reflectivity of 80% to 90%.

8. The top-emitting large aperture fully filled coherent light VCSEL according to claim 2, characterized in that: The insulating passivation layer is selected from one of silicon nitride and silicon oxide, and the thickness of the insulating passivation layer is 200nm to 500nm; the P-type metal electrode includes one or more of titanium, gold and platinum; the N-type metal electrode includes one or more of gold, germanium and nickel.

9. A method for preparing a top-emitting large-aperture fully-filled coherent light VCSEL as claimed in any one of claims 1 to 8, characterized in that: include: Selecting a substrate; An N-type DBR layer, an N-type spacer layer, an active layer, a P-type spacer layer, a P-type DBR layer and a P-type cap layer are sequentially deposited on the upper surface of the substrate; Etching a regular hexagonal table; Depositing an insulating passivation layer on the sidewalls of the regular hexagonal mesas; Sputtering a regular hexagonal porous P-type metal electrode on the upper surface of the P-type cap layer; thinning and polishing the lower surface of the substrate; N-type metal electrodes are sputtered on the lower surface of the substrate to obtain a top-emitting large-aperture VCSEL; A fully filled optical phase control crystal with a thickness satisfying the Talbot distance is selected, and a plurality of regular hexagonal air grooves are etched on its upper surface; Vapor-deposit a high-reflection film on the upper surface of the fully-filled optical phase control crystal; A fully filled optical phase control crystal is bonded on the upper surface of the regular hexagonal porous P-type metal electrode.

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