Driving Method, Device, Circuit and Electronic Equipment of Power Semiconductor Device

Abstract

A driving method, device, circuit and electronic device for a current-source type power semiconductor device, belonging to the technical field of power management. The driving method of the current-source type power semiconductor device is applied to depletion-type components, and includes: in response to a device turn-on instruction, inputting a forward bias voltage to the switching component in the turn-on module, inputting a reverse bias voltage to the switching component in the maintaining module, and inputting a reverse bias voltage to the switching component in the turn-off module through a power management module; in response to a device current-maintaining instruction, inputting a forward bias voltage to the switching component in the maintaining module, and inputting a reverse bias voltage to the switching component in the turn-on module through a power management module; in response to a device turn-off instruction, inputting a reverse bias voltage to both the switching components in the turn-on module and the maintaining module, and inputting a forward bias voltage to the switching component in the turn-off module through a power management module. The present application designs a driving method for a current-source type power semiconductor device, which can reliably realize the driving control of depletion-type components.

Description

Technical Field

[0001] The present application relates to the field of power management technology, and specifically to a driving method, device, circuit and electronic equipment of a current source type power semiconductor device. Background Art

[0002] Current source power semiconductor devices (including GCT, ETO, etc.) have been widely used in industrial variable frequency speed regulation, wind power grid connection, rail transit, DC transmission and other fields. Patent application with patent publication number CN108075757B, patent name "A high-power GTO drive control circuit" and patent application with patent publication number JP2018170758A, patent name "An output driver including a MOS switch with adjustable reverse bias" are the technical solutions most similar to the present application. Existing gate drives applied to current source power semiconductor devices (GCT, ETO, etc.) are usually implemented using integrated drive circuits, such as Figure 1 and Figure 2 As shown, its integrated drive circuit module mainly includes a power management module, an opening module, a closing module, etc. Usually, in order to realize the integrated current drive of power semiconductor devices, the driving circuit of the device usually uses voltage source type driven switching components (including silicon-based, silicon carbide-based or gallium nitride-based switching devices) in combination with inductors and capacitors to realize different types of current pulses to drive the opening, flow (maintenance) or closing functions of the current source type power semiconductor device. Figure 1 As shown, in the conventional current source type power semiconductor device driver, during the turn-on phase, a positive bias voltage is usually used for the switch components in the turn-on module, and a zero-voltage drive is adopted for the switch components in the holding module and the turn-off module; during the holding phase, a positive bias voltage is usually used for the switch components in the holding module, and a zero-voltage drive is adopted for the switch components in the turn-on module and the turn-off module; during the turn-off phase, a negative bias voltage is usually used for the switch components in the turn-off module, and a zero-voltage drive is adopted for the switch components in the turn-on module and the holding module.

[0003] The above existing driving types are mainly for the enhanced switch components (such as silicon-based enhanced MOS, enhanced JFET or enhanced DirectFET, etc.) in the driving. Such enhanced switch components have no leakage current at zero voltage and can be regarded as off state; while for depletion switch components (such as silicon carbide MOS, silicon carbide IGBT, depletion silicon-based MOS, gallium nitride JFET or gallium nitride HEMT, etc.), such driving methods are no longer applicable. Such devices will have a large leakage current at zero voltage, and a continuous reverse bias voltage must be applied to regard the device as off state. For many current wide bandgap (silicon carbide or gallium nitride) switch components, depletion type is still the main one, and wide bandgap has better switching and conduction characteristics than traditional silicon-based devices.

[0004] However, the current current source type power semiconductor device driving method is mainly aimed at enhancement type switching components, and cannot meet the needs when the switching components being driven are depletion type components. Therefore, it is urgent to develop a new current source type power semiconductor device driving method to solve the current defects and deficiencies, so as to realize the driving control of depletion type components. Summary of the invention

[0005] The present application aims to solve at least one of the technical problems in the related art to a certain extent. To this end, the present application provides a driving method, device, circuit and electronic device of a current source type power semiconductor device, which can reliably realize the driving control of the depletion type components in the integrated driving circuit of the current source type power semiconductor device by configuring different positive and negative bias voltage combinations in the turn-on, maintenance and turn-off stages of the current source type driving power semiconductor.

[0006] To achieve the above objectives, in a first aspect, the present application provides a driving method for a current source type power semiconductor device, the driving method comprising the following steps:

[0007] In response to the device turn-on instruction, a forward bias voltage is input to the switch components in the turn-on module, a reverse bias voltage is input to the switch components in the maintain module, and a reverse bias voltage is input to the switch components in the turn-off module through the power management module;

[0008] In response to the device maintaining current flow instruction, a forward bias voltage is input to the switch components in the maintaining module and a reverse bias voltage is input to the switch components in the opening module through the power management module;

[0009] In response to the device shutdown instruction, a reverse bias voltage is input to the switch components in the opening module and the maintaining module through the power management module, and a forward bias voltage is input to the switch components in the shutdown module;

[0010] Wherein, at least one of the switch components in the opening module, the switch components in the closing module, and the switch components in the maintaining module is a depletion type component.

[0011] Preferably, the step of inputting a forward bias voltage to the switch components in the turn-on module, inputting a reverse bias voltage to the switch components in the maintain module, and inputting a reverse bias voltage to the switch components in the turn-off module through the power management module in response to the device turn-on instruction specifically includes when receiving the device turn-on instruction, inputting a forward bias voltage to the switch components in the turn-on module, inputting a reverse bias voltage to the switch components in the maintain module, and inputting a reverse bias voltage to the switch components in the turn-off module through the power management module at the same time.

[0012] Preferably, the step of inputting a forward bias voltage to the switch components in the maintaining module through the power management module and inputting a reverse bias voltage to the switch components in the opening module in response to the device maintaining current flow instruction specifically includes: when receiving the device maintaining current flow instruction, first inputting a forward bias voltage to the switch components in the maintaining module through the power management module, and then inputting a reverse bias voltage to the switch components in the opening module after a first time interval; wherein, the shutdown module always remains the same as the opening state, and a reverse bias voltage is input to the switch components in the shutdown module through the power management module.

[0013] Preferably, the first time interval does not exceed 20% of the total opening time.

[0014] Preferably, the first time interval is less than or equal to 2 μs.

[0015] Preferably, in response to the device shutdown instruction, the step of inputting a reverse bias voltage to both the switch components in the opening module and the maintaining module through the power management module, and inputting a forward bias voltage to the switch components in the shutdown module specifically includes: when receiving the device shutdown instruction, first inputting a reverse bias voltage to the switch components in the maintaining module through the power management module, and then inputting a forward bias voltage to the switch components in the shutdown module after a second time interval; wherein, the opening module always remains the same as in the maintaining state, and the reverse bias voltage is input to the switch components in the opening module through the power management module.

[0016] Preferably, the second time interval does not exceed 20% of the total shutdown time.

[0017] Preferably, the second time interval is less than or equal to 2 μs.

[0018] Preferably, the depletion-mode components are silicon-based, silicon carbide wide-bandgap or gallium nitride wide-bandgap switching devices.

[0019] Preferably, the reverse bias voltage input to the switch components in the opening module, the reverse bias voltage input to the switch components in the closing module, and the reverse bias voltage input to the switch components in the maintaining module are all less than or equal to -5V.

[0020] Preferably, when the current source type power semiconductor device operates in a blocking state, the power management module inputs a reverse bias voltage to the switch components in the turn-on module, the turn-off module and the maintain module.

[0021] The driving method of the current source type power semiconductor device reduces the leakage current of the integrated drive of the current source type power semiconductor device and reduces the driving power loss, and effectively improves the state switching speed of the integrated drive of the current source type power semiconductor device by configuring stable forward bias and reverse bias voltages for the depletion type components in the integrated drive circuit of the current source type power semiconductor device.

[0022] In a second aspect, the present application provides a current source type power semiconductor device, wherein a power management module of the current source type power semiconductor device adopts the above-mentioned driving method for driving control.

[0023] Preferably, the current source type power semiconductor device is one of GCT and ETO.

[0024] The state switching speed of the integrated drive of the current source type power semiconductor device is effectively improved.

[0025] In the third aspect, the present application provides a driving circuit connected to the gate of a current source type power semiconductor device, comprising a turn-on module, a turn-off module, a maintaining module and a power management module. The power management module of the driving circuit adopts the above-mentioned driving method to control the forward bias voltage and reverse bias voltage supply to the turn-on module, the turn-off module and the maintaining module through the power management module.

[0026] The drive circuit reduces the leakage current of the integrated drive of the current source type power semiconductor device and reduces the drive power loss by configuring stable forward bias and reverse bias voltages for the depletion type components in the integrated drive circuit of the current source type power semiconductor device, while effectively improving the state switching speed of the integrated drive of the current source type power semiconductor device.

[0027] In a fourth aspect, the present application provides an electronic device, which includes the above-mentioned current source type power semiconductor device and / or the above-mentioned driving circuit.

[0028] The electronic device reduces the leakage current of the integrated drive of the current source type power semiconductor device and reduces the drive power loss by configuring stable forward bias and reverse bias voltages for the depletion type components in the integrated drive circuit of the current source type power semiconductor device, while effectively improving the state switching speed of the integrated drive of the current source type power semiconductor device.

[0029] Other features and advantages of the present application will be described in the subsequent description, and in part will become apparent from the description, or it may be understood through the implementation of the present application that the objects and other advantages of the present application can be realized and obtained through the structures particularly pointed out in the written description, claims, and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A circuit connection diagram of an existing integrated drive circuit module;

[0031] Figure 2 It is a voltage timing control diagram of an existing integrated drive circuit module;

[0032] Figure 3A connection block diagram of a driving method for a current source type power semiconductor device of the present application;

[0033] Figure 4 A circuit connection diagram of a driving circuit of a current source type power semiconductor device of the present application;

[0034] Figure 5 This is a voltage timing control diagram of a driving circuit of a current source type power semiconductor device of the present application.

[0035] In the figure: 2-1, turn-on module; 2-2, maintain module; 2-3, turn-off module; 2-4, current source type power semiconductor device; 2-5, power management module; 2-6, external power supply; 2-11, switch components in the turn-on module; 2-12, turn-on timing voltage; 2-21, switch components in the maintain module; 2-22, maintain timing voltage; 2-31, switch components in the turn-off module; 2-32, turn-off timing voltage. DETAILED DESCRIPTION

[0036] In order to make the objectives, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0037] The terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the embodiments of the present invention. The singular forms "a", "said" and "the" used in the embodiments of the present invention and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0038] In order to realize the switch control of current source type power semiconductor devices, such as Figure 1 As shown, it is a circuit connection and voltage timing control diagram of an existing integrated drive circuit module. The existing gate drive circuit applied to current source type power semiconductor devices requires a power management module to supply power to multiple modules including an opening module, a maintaining module and a closing module.

[0039] The existing driving method is mainly considered for the enhanced switching components in the drive. This type of enhanced switching components has no leakage current at zero voltage and can be regarded as the off state; however, when the switching components in the integrated drive circuit module are depletion-type components, the existing driving method is not applicable, because the depletion-type components will have a large leakage current at zero voltage and cannot be reliably turned off. There will be relatively serious electromagnetic crosstalk or common-mode interference, which is easy to cause false triggering, greatly reducing the working reliability of the drive circuit.

[0040] On the other hand, since wide bandgap devices have better switching and conduction characteristics than traditional silicon-based devices, and based on the limitations of existing device processing technology, many wide bandgap (such as silicon carbide or gallium nitride) switching components are still mainly depletion-type devices. Therefore, when designing a drive circuit module, there is a large selection space for wide bandgap depletion-type components, which is also the advantage of depletion-type components and can facilitate the design of drive circuit modules. Therefore, in order to reliably realize the drive control of depletion-type components in the integrated drive circuit of current source power semiconductor devices, the inventor has conducted in-depth research on the drive control method of depletion-type components and proposed a drive method for current source power semiconductor devices.

[0041] Specifically, the design ideas of the solution proposed in this application are as follows:

[0042] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a method for driving a current source power semiconductor device composed of depletion-type switching components, by changing the zero-voltage configuration strategy of the traditional current source drive to a reverse bias voltage to achieve the driving configuration of the depletion-type switching components.

[0043] The basic idea of ​​the present invention is to develop a new type of turn-on, hold, turn-off and power circuit topology to achieve flexible forward bias voltage and reverse bias voltage coordination for turn-on circuit, hold circuit and turn-off circuit. By configuring different forward and reverse bias voltage combinations in the turn-on, hold and turn-off stages of the current source type driving power semiconductor, the same turn-on, hold and turn-off current pulses as the traditional gate drive are achieved.

[0044] Embodiment 1

[0045] In order to develop a driving method suitable for depletion-type switching components, the inventors have conducted in-depth research on the driving technology of depletion-type switching components and proposed a driving method for a current source power semiconductor device 2-4.

[0046] Specifically, the design ideas of the solution proposed in this application are as follows:

[0047] like Figure 2 As shown, a driving method of a current source type power semiconductor device 2-4, the driving method comprises the following steps:

[0048] S1, in response to the device opening instruction, a forward bias voltage is input to the switch components in the opening module 2-1, a reverse bias voltage is input to the switch components in the maintaining module 2-2, and a reverse bias voltage is input to the switch components in the shut-down module 2-3 through the power management module 2-5;

[0049] S2, in response to the device maintain current flow instruction, input a forward bias voltage to the switch components in the maintenance module 2-2 through the power management module 2-5, and input a reverse bias voltage to the switch components in the opening module 2-1;

[0050] S3, in response to the device shutdown instruction, inputting a reverse bias voltage to the switch components in the opening module 2-1 and the maintaining module 2-2 through the power management module 2-5, and inputting a forward bias voltage to the switch components in the shutdown module 2-3;

[0051] Among them, the switch components in the opening module 2-1 and / or the switch components in the closing module 2-3 and / or the switch components in the maintaining module 2-2 are mainly composed of depletion type components.

[0052] It should be noted that the sequential execution of steps S1, S2, and S3 listed in the first embodiment is only the most common case of this scheme. That is, the above steps S1, S2, and S3 are generally executed in sequence (normally receiving the device turn-on instruction, the device flow-maintaining instruction, and the device turn-off instruction in sequence). However, in special cases, such as receiving the device turn-on instruction without receiving the device flow-maintaining instruction after receiving the device turn-on instruction, and directly receiving the device turn-off instruction, the prerequisite of step S2 is not met, and step S2 is directly skipped to execute step S3.

[0053] Preferably, the depletion-type components use silicon carbide or gallium nitride wide bandgap switching devices. By adapting the drive design to the depletion-type switching components, wide bandgap switching devices such as silicon carbide or gallium nitride can be used, which can achieve lower drive loss, faster commutation speed and better switching performance of current source type driving power semiconductor devices.

[0054] In this embodiment, the three modules, namely, the opening module 2-1, the maintaining module 2-2 and the shutting module 2-3, are provided with the voltage of the depletion-type switching components by the power management module 2-5, and then the switching components and inductors and capacitors inside the three modules realize different types of current pulses to drive the current source power semiconductor device 2-4.

[0055] The technical solution described in this embodiment can reduce the leakage current of the integrated drive of the current source type power semiconductor device 2-4, reduce the driving power loss, and effectively improve the state switching speed of the integrated drive of the current source type power semiconductor device 2-4 by configuring a stable forward bias and reverse bias voltage for the depletion type switch component in the integrated drive circuit of the current source type power semiconductor device 2-4. Therefore, the driving method of the current source type power semiconductor device 2-4 provided by the present invention can realize the driving method of the opening, maintaining and shutting down module 2-3 with the depletion type device as the main switch component.

[0056] Embodiment 2

[0057] In order to ensure that the current source type power semiconductor devices 2-4 can ensure a good flow effect when switching states and further reduce the driving power loss, the second embodiment further improves the solution in the first embodiment, and the improvements are as follows:

[0058] Specifically, the above-mentioned step of inputting a forward bias voltage to the switch components in the opening module 2-1, inputting a reverse bias voltage to the switch components in the maintenance module 2-2, and inputting a reverse bias voltage to the switch components in the shutdown module 2-3 in response to the device opening instruction specifically includes when receiving the device opening instruction, inputting a forward bias voltage to the switch components in the opening module 2-1, inputting a reverse bias voltage to the switch components in the maintenance module 2-2, and inputting a reverse bias voltage to the switch components in the shutdown module 2-3 through the power management module 2-5 at the same time. In this way, the leakage current of the integrated drive of the current source type power semiconductor device 2-4 can be effectively reduced.

[0059] Wherein, in response to the device maintaining the flow instruction, the step of inputting a forward bias voltage to the switch components in the maintenance module 2-2 through the power management module 2-5, and inputting a reverse bias voltage to the switch components in the opening module 2-1 specifically includes when receiving the device maintaining the flow instruction, first inputting a forward bias voltage to the switch components in the maintenance module 2-2 through the power management module 2-5, and then inputting a reverse bias voltage to the switch components in the opening module 2-1 after a first time interval; wherein, the shutdown module 2-3 always remains the same as when it is turned on, and the reverse bias voltage is input to the switch components in the shutdown module 2-3 through the power management module 2-5. In this embodiment, the first time interval does not exceed 20% of the total opening time, and is usually less than or equal to 2us. In this way, the driving power loss can be reduced while improving the driving efficiency of the integrated driving circuit for the current source power semiconductor.

[0060] Furthermore, in this embodiment, in response to the device shutdown instruction, the step of inputting a reverse bias voltage to both the switch components in the opening module 2-1 and the maintaining module 2-2 through the power management module 2-5, and inputting a forward bias voltage to the switch components in the shutdown module 2-3 specifically includes when receiving the device shutdown instruction, first inputting a reverse bias voltage to the switch components in the maintaining module 2-2 through the power management module 2-5, and then inputting a forward bias voltage to the switch components in the shutdown module 2-3 after a second time interval; wherein, the opening module 2-1 always remains the same as in the maintaining state, and the reverse bias voltage is input to the switch components in the opening module 2-1 through the power management module 2-5. In this embodiment, the second time interval does not exceed 20% of the total shutdown time, and is usually less than or equal to 2us. This shutdown control method can not only maintain a good current-passing effect, but also effectively improve the state switching speed of the integrated driver of the current source power semiconductor device 2-4. Because after the shutdown command is issued, the reverse bias voltage is first input to the switching components in the maintenance module 2-2, and after 2us, the voltage gradually approaches the shutdown state. At this time, the shutdown module 2-3 is triggered again, which can achieve lower driving loss, faster commutation speed and better switching performance of the current source drive power semiconductor device.

[0061] Preferably, the reverse bias voltage input to the switch components in the opening module 2-1, the reverse bias voltage input to the switch components in the closing module 2-3, and the reverse bias voltage input to the switch components in the maintaining module 2-2 are all less than or equal to -5V.

[0062] This embodiment applies a stable reverse bias voltage to the internal switch components of the opening, maintaining and closing modules 2-3 in different states, which can effectively suppress differential or common mode interference such as crosstalk and electromagnetic interference and prevent false triggering of the module. The reverse bias voltage is determined according to the inherent characteristics of the depletion-type switch components and the recommended reverse bias voltage for maintaining a stable blocking state as specified in the data sheet, and is usually less than or equal to -5V.

[0063] In summary, this embodiment applies a reverse bias voltage to the switch components in the on module 2-1 after triggering the forward bias voltage of the on components in the maintaining module 2-2 during maintenance, and first applies a reverse bias voltage to the switch components in the maintaining module 2-2 and then applies a forward bias voltage to the switch components in the off module 2-3 during shutdown. This transient setting of the stage switching overlaps the trigger time, thereby greatly improving the driving efficiency of the integrated driving circuit for the current source type power semiconductor device 2-4. This realizes the function of ensuring a good flow effect when the current source type power semiconductor device 2-4 switches states, and further reducing the driving power loss.

[0064] In this embodiment, when the current source type power semiconductor device 2-4 works in the blocking state, the power management module 2-5 inputs a reverse bias voltage to the switch components in the opening module 2-1, the closing module 2-3 and the maintaining module 2-2. The blocking state refers to a period in a working time cycle when the duty ratio of the non-working time is greater than a certain threshold. During this period, the input of a reverse bias voltage to the opening module 2-1, the closing module 2-3 and the maintaining module 2-2 of the current source type power semiconductor device 2-4 can improve the working reliability of the integrated drive circuit module.

[0065] The driving method of the current source type power semiconductor device 2-4 reduces the leakage current of the integrated drive of the current source type power semiconductor device 2-4 and reduces the driving power loss, and at the same time effectively improves the state switching speed of the integrated drive of the current source type power semiconductor device 2-4 by configuring stable forward bias and reverse bias voltages for the depletion type components in the integrated drive circuit of the current source type power semiconductor device 2-4.

[0066] Embodiment 3

[0067] This embodiment provides a current source type power semiconductor device 2 - 4 , and the power management module 2 - 5 of the current source type power semiconductor device 2 - 4 adopts the above-mentioned driving method to perform driving control.

[0068] Preferably, the current source type power semiconductor device 2 - 4 is one of GCT or ETO.

[0069] The state switching speed of the integrated drive of the current source type power semiconductor devices 2 - 4 in this embodiment is effectively improved.

[0070] Embodiment 4

[0071] This embodiment provides a driving circuit, which is connected to the gate of a current source type power semiconductor device 2-4, and includes a turn-on module 2-1, a turn-off module 2-3, a maintaining module 2-2 and a power management module 2-5. The power management module 2-5 of the driving circuit adopts the above-mentioned driving method to control the forward bias voltage and reverse bias voltage supply to the turn-on module 2-1, the turn-off module 2-3 and the maintaining module 2-2 through the power management module 2-5.

[0072] By changing the driving zero-voltage configuration control method of the traditional current source type power semiconductor device 2-4 to the reverse bias voltage configuration control method, the driving configuration of the depletion type switch component is realized. And by adding a stable overlapping trigger time when switching between the on, maintain and off states, a good flow effect is ensured while also reducing the driving power loss.

[0073] In summary, the driving circuit reduces the leakage current of the integrated drive of the current source type power semiconductor device 2-4 and the driving power loss by configuring stable forward bias and reverse bias voltages for the depletion type components in the integrated driving circuit of the current source type power semiconductor device 2-4, while effectively improving the state switching speed of the integrated drive of the current source type power semiconductor device 2-4.

[0074] Embodiment 5

[0075] This embodiment provides an electronic device, which includes the above-mentioned current source type power semiconductor device 2-4 and / or the above-mentioned drive circuit.

[0076] The electronic device configures stable forward bias and reverse bias voltages for the depletion-type components in the integrated drive circuit of the current source power semiconductor device 2-4, thereby reducing the leakage current of the integrated drive of the current source power semiconductor device 2-4, reducing the drive power loss, and effectively improving the state switching speed of the integrated drive of the current source power semiconductor device 2-4.

[0077] This electronic device has different forms of presentation in different industries. For example, in the field of industrial variable frequency speed regulation, the current source type power semiconductor device 2-4 can be used in the frequency converter to achieve precise control of the motor speed by adjusting the power supply frequency of the motor. However, the frequency converter can be widely used in the fields of industrial automation and mechanical manufacturing. For example, in the field of wind power grid connection, the current source type power semiconductor device 2-4 can be used in the converter to convert the electric energy generated by the wind turbine into a voltage and frequency suitable for grid connection, while realizing maximum power point tracking and power quality control. For example, in the rail transit system, the current source type power semiconductor device 2-4 can be used in the traction converter to provide the required electric energy for the train and realize efficient and smooth traction and braking control. For another example, in the field of direct current transmission, in the HVDC system, the current source type power semiconductor device 2-4 can be used in the converter station to realize the conversion between alternating current and direct current, improve the transmission efficiency, and reduce the energy loss in the transmission process.

[0078] The above describes specific embodiments of the present invention. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the embodiments and still achieve the desired results. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0079] In the description of the embodiments of the present invention, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiments of the present invention. In the embodiments of the present invention, the schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in the embodiments of the present invention and the features of the different embodiments or examples, without contradiction.

[0080] In addition, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features, and do not include any ordering. Thus, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features and are used to distinguish each other. In the description of the embodiments of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0081] Any process or method description in a flowchart or otherwise described herein may be understood to represent a module, fragment or portion of code comprising one or more executable instructions for implementing the steps of a custom logical function or process, and the scope of the preferred implementation of the embodiments of the present invention includes alternative implementations in which functions may not be performed in the order shown or discussed, including performing functions in a substantially simultaneous manner or in reverse order depending on the functions involved, which should be understood by technicians in the technical field to which the embodiments of the present invention belong.

[0082] The above description is only a preferred embodiment of the embodiment of the present invention and is not intended to limit the embodiment of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiment of the present invention should be included in the scope of protection of the embodiment of the present invention.

Claims

1. A method for driving a current source type power semiconductor device, characterized in that: The steps include: In response to a device turn-on instruction, a forward bias voltage is input to a switch component in the turn-on module, a reverse bias voltage is input to a switch component in the maintain module, and a reverse bias voltage is input to a switch component in the turn-off module through a power management module; when a device current-maintaining instruction is received, a forward bias voltage is first input to a switch component in the maintain module through the power management module, and then a reverse bias voltage is input to a switch component in the turn-on module after a first time interval; wherein the turn-off module always remains the same as in the turn-on state, and a reverse bias voltage is input to a switch component in the turn-off module through the power management module; In response to the device maintaining current flow instruction, a forward bias voltage is input to the switch components in the maintaining module through the power management module, and a reverse bias voltage is input to the switch components in the opening module; when a device opening instruction is received, a forward bias voltage is input to the switch components in the opening module, a reverse bias voltage is input to the switch components in the maintaining module, and a reverse bias voltage is input to the switch components in the closing module through the power management module at the same time; In response to a device shutdown instruction, a reverse bias voltage is input to both the switch components in the opening module and the maintaining module through the power management module, and a forward bias voltage is input to the switch components in the shutdown module; when a device shutdown instruction is received, a reverse bias voltage is first input to the switch components in the maintaining module through the power management module, and then a forward bias voltage is input to the switch components in the shutdown module after a second time interval; wherein the opening module always remains the same as in the maintaining state, and a reverse bias voltage is input to the switch components in the opening module through the power management module; Wherein, at least one of the switch components in the opening module, the switch components in the closing module, and the switch components in the maintaining module is a depletion type component.

2. The driving method according to claim 1, characterized in that: The first time interval does not exceed 20% of the total opening time.

3. The driving method according to claim 1, characterized in that: The first time interval is less than or equal to 2 μs.

4. The driving method according to claim 3, characterized in that: The second time interval does not exceed 20% of the total shutdown time.

5. The driving method according to claim 4, characterized in that: The second time interval is less than or equal to 2 μs.

6. The driving method according to claim 1, characterized in that: The depletion-type components are silicon-based, silicon carbide wide-bandgap or gallium nitride wide-bandgap switching devices.

7. The driving method according to claim 1, characterized in that: The reverse bias voltage input to the switch components in the opening module, the reverse bias voltage input to the switch components in the closing module, and the reverse bias voltage input to the switch components in the maintaining module are all less than or equal to -5V.

8. The driving method according to claim 1, characterized in that: When the current source type power semiconductor device operates in a blocking state, the power management module inputs a reverse bias voltage to the switch components in the opening module, the closing module and the maintaining module.

9. A current source type power semiconductor device, characterized in that: The power management module of the current source type power semiconductor device adopts the driving method according to any one of claims 1 to 8 for driving control.

10. The power semiconductor device according to claim 9, characterized in that: The current source type power semiconductor device is one of GCT and ETO.

11. A driving circuit connected to the gate of a current source type power semiconductor device, comprising an opening module, a closing module, a maintaining module and a power management module, characterized in that: The power management module of the driving circuit adopts the driving method according to any one of claims 1 to 8 to control the forward bias voltage and reverse bias voltage supply to the opening module, the closing module and the maintaining module.

12. An electronic device, characterized in that: The electronic device comprises the current source type power semiconductor device according to claim 9 and / or the drive circuit according to claim 11.

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