Ceramic composite material, method for preparing the same and use thereof

Abstract

The application provides a ceramic composite material and a preparation method and application thereof, and belongs to the field of composite materials. A ceramic / metal mixed layer is arranged between a ceramic matrix and a nanocrystalline layer, so that the bonding strength of the ceramic matrix and the nanocrystalline layer is enhanced, the ceramic / metal mixed layer can form compressive stress in the subsurface of the ceramic matrix, and the fatigue strength of the ceramic composite material is improved; the metal carbide in the nanocrystalline layer has high melting point and good stability at high temperature, and the nanocrystalline is wrapped by an amorphous carbon film with excellent wear resistance, so that the high-temperature stability and wear resistance are enhanced, and the bonding strength between the nanocrystalline layer and the structure layer of the amorphous carbon film wrapped nanocrystalline is improved; the fatigue strength of the ceramic composite material, the bonding strength between layers, the wear resistance and the high-temperature stability are improved, and the service life of the ceramic strip of the printer is prolonged.

Description

Technical Field

[0001] This invention belongs to the field of composite materials, specifically relating to a ceramic composite material, its preparation method, and its application. Background Technology

[0002] Printers are essential office equipment, becoming increasingly indispensable in daily life. With the widespread use of computers, the amount of paper printed is constantly increasing, placing higher demands on the stable and reliable continuous operation of printers, especially on the lifespan of the ceramic strips that come into contact with the paper. Currently, printer ceramic strips mainly use aluminum nitride ceramic, without any surface treatment. These ceramic strips typically print 8,000 to 10,000 sheets, while the printer's lifespan is only 70,000 to 80,000 sheets. Sometimes, replacing the ceramic strip leads to the printer becoming unusable. Therefore, there is an urgent need for a ceramic strip with a longer lifespan. Summary of the Invention

[0003] The purpose of this invention is to provide a ceramic composite material, its preparation method, and its application. The ceramic composite material of this invention, when used as a ceramic strip in a printer, has a long service life.

[0004] This invention provides a ceramic composite material, comprising a ceramic matrix and a ceramic / metal hybrid layer, a nanocrystalline layer, and an amorphous carbon film-encapsulated nanocrystalline layer sequentially stacked on the ceramic matrix, wherein the ceramic matrix and the ceramic / metal hybrid layer are in contact;

[0005] The thickness of the ceramic / metal hybrid layer is ≥20nm;

[0006] The nanocrystalline layer and the nanocrystalline layer encapsulated by the amorphous carbon film are independently transition metal carbide nanocrystalline layers.

[0007] Preferably, the amorphous carbon film encapsulating the nanocrystalline layer comprises nanocrystals and an amorphous carbon film encapsulating the nanocrystals; the number of sp2 bonds in the amorphous carbon film accounts for 50-70% of the total number of sp2 and sp3 bonds.

[0008] Preferably, the size of the nanocrystals in the nanocrystalline layer is less than 40 nm.

[0009] Preferably, the metal in the ceramic / metal hybrid layer includes one of Ni, Fe, and Co; and the transition metal carbide nanocrystals are one of CrC nanocrystals, TiC nanocrystals, ZrC nanocrystals, and CuC nanocrystals.

[0010] Preferably, the thickness of the nanocrystalline layer and the amorphous carbon film encapsulating the nanocrystalline layer is independently 20–50 nm.

[0011] The present invention also provides a method for preparing the ceramic composite material described in the above technical solution, comprising the following steps:

[0012] Metal deposition is performed on a ceramic substrate using a high-energy ion beam to form a ceramic / metal hybrid layer on the surface of the ceramic substrate; the temperature of the ceramic substrate is not lower than 300°C; the angle between the high-energy ion beam and the horizontal direction is 60-88°, and the energy of the high-energy ion beam is 40-100 keV.

[0013] A first low-energy ion beam is deposited on the surface of the ceramic / metal hybrid layer while a first acetylene gas is introduced, resulting in first carbonization and the formation of a nanocrystalline layer, thus obtaining a ceramic composite material precursor. The first low-energy ion beam is a transition metal in the transition metal carbide corresponding to the nanocrystalline layer. The volumetric flow rate of the first acetylene gas is less than 50 sccm.

[0014] The ceramic composite material precursor is cooled by introducing a second acetylene gas. After the temperature of the ceramic composite material precursor drops to 60-100°C, a second low-energy ion beam is deposited onto the surface of the nanocrystalline layer while a third acetylene gas is continuously introduced, resulting in a second carbonization and the formation of an amorphous carbon film encapsulating the nanocrystalline layer to obtain the ceramic composite material. The negative pressure of the second low-energy ion beam is 60-100V. The second low-energy ion beam is a transition metal in the transition metal carbide corresponding to the amorphous carbon film encapsulating the nanocrystalline layer. The volumetric flow rate of the second acetylene gas is 150-400 sccm. The volumetric flow rate of the third acetylene gas is 500-1000 sccm.

[0015] Preferably, the surface roughness of the ceramic substrate is 0.1 to 0.5 μm.

[0016] Preferably, the beam current of the high-energy ion beam is not less than 8mA.

[0017] Preferably, the energy of the first low-energy ion beam is 200-550 eV and the beam current is not higher than 500 mA.

[0018] The present invention also provides the application of the ceramic composite material described in the above technical solution or the ceramic composite material prepared by the preparation method described in the above technical solution as a ceramic strip for printers.

[0019] This invention provides a ceramic composite material, comprising a ceramic matrix and a ceramic / metal hybrid layer, a nanocrystalline layer, and an amorphous carbon film-encapsulated nanocrystalline layer sequentially stacked on the ceramic matrix, wherein the ceramic matrix and the ceramic / metal hybrid layer are in contact; the thickness of the ceramic / metal hybrid layer is not less than 20 nm; and the nanocrystalline layers and the amorphous carbon film-encapsulated nanocrystalline layer contain nanocrystalline transition metal carbide nanocrystals. This invention incorporates a ceramic / metal hybrid layer between the ceramic matrix and the nanocrystalline layer, enhancing the bonding strength between them. Simultaneously, the ceramic / metal hybrid layer generates compressive stress on the subsurface of the ceramic matrix, improving the fatigue strength of the ceramic composite material. Furthermore, only a ceramic / metal hybrid layer with a thickness ≥20 nm can effectively support the film layer above it. The metal carbides in the nanocrystalline layer have high melting points and good stability at high temperatures. Moreover, this invention uses an amorphous carbon film with excellent wear resistance to encapsulate the nanocrystals, enhancing both high-temperature stability and wear resistance, and improving the bonding strength between the nanocrystalline layer and the structural layer encapsulated by the amorphous carbon film. The improved fatigue strength, interlayer bonding strength, wear resistance, and high-temperature stability of the ceramic composite material extend its service life as a ceramic strip for printers. Attached Figure Description

[0020] Figure 1 The bonding strength between the layers of the ceramic composite materials in Examples 1-2 and Comparative Examples 1-2;

[0021] Figure 2 The results are the experimental results of the temperature resistance of the ceramic composite materials in Examples 1-2 and Comparative Examples 1-2;

[0022] Figure 3 The hardness of the ceramic composite materials of Examples 1-2 and Comparative Examples 1-2;

[0023] Figure 4 The coefficient of friction is the coefficient of friction of the ceramic composite materials of Examples 1-2 and Comparative Examples 1-2. Detailed Implementation

[0024] This invention provides a ceramic composite material, comprising a ceramic matrix and a ceramic / metal hybrid layer, a nanocrystalline layer, and an amorphous carbon film-encapsulated nanocrystalline layer sequentially stacked on the ceramic matrix, wherein the ceramic matrix and the ceramic / metal hybrid layer are in contact;

[0025] The thickness of the ceramic / metal hybrid layer is ≥20nm;

[0026] The nanocrystalline layer and the nanocrystalline layer encapsulated by the amorphous carbon film are independently transition metal carbide nanocrystalline layers.

[0027] The ceramic composite material provided by this invention includes a ceramic matrix. In this invention, the ceramic matrix is ​​preferably an aluminum nitride ceramic matrix or an alumina ceramic matrix.

[0028] The ceramic composite material provided by this invention includes a ceramic / metal hybrid layer attached to a ceramic matrix. In this invention, the thickness of the ceramic / metal hybrid layer is ≥20 nm, preferably 30–80 nm. A thickness of ≥20 nm is necessary to provide support for the film layer above the ceramic / metal hybrid layer. In this invention, the metal in the ceramic / metal hybrid layer preferably includes one of Ni, Fe, and Co. In this invention, the ceramic in the ceramic / metal hybrid layer and the ceramic in the ceramic matrix are the same material. Within any 20 nm thickness along the stacking direction, the metal ion concentration in the ceramic / metal hybrid layer is preferably not less than 6 × 10⁻⁶. 16 pcs / cm 2 The ceramic / metal hybrid layer described in this invention can enhance the bonding strength between the ceramic matrix and the nanocrystalline layer. At the same time, the ceramic / metal hybrid layer can form compressive stress on the subsurface, thereby improving the fatigue strength of the ceramic composite material.

[0029] The ceramic composite material provided by this invention includes a nanocrystalline layer attached to the surface of a ceramic / metal hybrid layer. In this invention, the thickness of the nanocrystalline layer is preferably 20–50 nm, more preferably 30–40 nm. The nanocrystals in the nanocrystalline layer are transition metal carbide nanocrystals, preferably one of CrC nanocrystals, TiC nanocrystals, ZrC nanocrystals, and CuC nanocrystals. The size of the nanocrystals in the nanocrystalline layer is preferably less than 40 nm, more preferably 20–30 nm. In this invention, the hardness of the nanocrystalline layer is preferably ≥40 GPa. The metal carbides in the nanocrystalline layer have high melting points and good stability at high temperatures, which can enhance the high-temperature stability of the ceramic composite material.

[0030] The ceramic composite material provided by this invention comprises an amorphous carbon film encapsulating a nanocrystalline layer on the surface of a nanocrystalline layer. In this invention, the amorphous carbon film encapsulating the nanocrystalline layer preferably comprises nanocrystals and an amorphous carbon film encapsulating the nanocrystals; the number of sp2 bonds in the amorphous carbon film preferably accounts for 50-70% of the total number of sp2 and sp3 bonds, more preferably 55-65%. In this invention, the nanocrystals in the amorphous carbon film encapsulating the nanocrystalline layer are transition metal carbide nanocrystals; the particle size of the nanocrystals in the amorphous carbon film encapsulating the nanocrystalline layer is preferably 3-5 nm; the transition metal carbide nanocrystals are preferably one of CrC nanocrystals, TiC nanocrystals, ZrC nanocrystals, and CuC nanocrystals. The thickness of the amorphous carbon film encapsulating the nanocrystalline layer is preferably 20-50 nm, more preferably 25-45 nm, and even more preferably 30-40 nm. In this invention, the nanohardness of the amorphous carbon film-encapsulated nanocrystalline layer is preferably 15–25 GPa, more preferably 20–24 GPa; the coefficient of friction is preferably below 0.15, more preferably 0.08–0.12. This invention utilizes an amorphous carbon film with excellent wear resistance to encapsulate nanocrystals, which not only enhances wear resistance but also improves the bonding strength between the nanocrystalline layer and the structural layer encapsulated by the amorphous carbon film.

[0031] Improved fatigue strength, interlayer bonding strength, wear resistance, and high-temperature stability of ceramic composite materials extend their service life as ceramic strips for printers.

[0032] The present invention also provides a method for preparing the ceramic composite material described above, comprising the following steps:

[0033] Metal deposition is performed on a ceramic substrate using a high-energy ion beam to form a ceramic / metal hybrid layer on the surface of the ceramic substrate; the temperature of the ceramic substrate is not lower than 300°C; the angle between the high-energy ion beam and the horizontal direction is 60-88°, and the energy of the high-energy ion beam is 40-100 keV.

[0034] A first low-energy ion beam is injected into the surface of the ceramic / metal hybrid layer while a first acetylene gas is introduced, resulting in first carbonization and the formation of a nanocrystalline layer, thus obtaining a ceramic composite material precursor. The first low-energy ion beam is a transition metal in the transition metal carbide corresponding to the nanocrystalline layer. The volumetric flow rate of the first acetylene is less than 50 sccm.

[0035] The ceramic composite material precursor is cooled by introducing a second acetylene gas. After the temperature of the ceramic composite material precursor drops to 60-100°C, a second low-energy ion beam is injected into the surface of the nanocrystalline layer while a third acetylene gas continues to be introduced, causing a second carbonization to occur and forming an amorphous carbon film encapsulating the nanocrystalline layer, thus obtaining the ceramic composite material. The negative pressure of the second low-energy ion beam is 60-100V. The second low-energy ion beam is a transition metal in the transition metal carbide corresponding to the amorphous carbon film encapsulating the nanocrystalline layer. The volumetric flow rate of the second acetylene is 150-400 sccm. The volumetric flow rate of the third acetylene is 500-1000 sccm.

[0036] This invention uses a high-energy ion beam to deposit metal onto a ceramic substrate, forming a ceramic / metal hybrid layer on the surface of the ceramic substrate.

[0037] In this invention, the angle between the high-energy ion beam and the horizontal direction is 60–88°, preferably 65–78°. If the angle is less than 60°, it is difficult to achieve a 20 nm thick mixed layer, and the deposition efficiency is too high, making it difficult to deposit a film on the surface. If the angle is greater than 88°, a large number of defects will be formed when the high-energy ion beam is injected into the ceramic substrate surface, and the injection depth will be too deep. Excessive depth will result in a low concentration of metal ions at the depth, leading to low bonding strength.

[0038] In this invention, the energy of the high-energy ion beam is 40–100 keV, preferably 60–80 keV, and the beam current is preferably not less than 8 mA, more preferably 10–12 mA. The deposition process requires a high-energy ion beam with an energy greater than 40 keV to ensure that the ion range is greater than 20 nm.

[0039] In this invention, the temperature of the ceramic substrate is not lower than 300°C, preferably 300–500°C. If the temperature is too low, it is difficult to prepare a hybrid layer with a thickness of not less than 20 nm.

[0040] In this invention, the high-energy ion beam is implanted into the surface / subsurface of the ceramic substrate, with a preferred implantation depth of 20–40 nm, where the implantation depth refers to the thickness of the hybrid layer. After implantation, the metal mixes with the ceramic substrate at the subsurface to form a ceramic / metal hybrid layer. The coefficient of thermal expansion and conductivity of the ceramic / metal hybrid layer are close to those of the subsequently deposited nanocrystalline layer. Simultaneously, the implanted dopant can generate compressive stress at the subsurface, which can significantly improve fatigue strength and bonding strength.

[0041] Furthermore, the temperature of the ceramic substrate rises further due to the bombardment of high-energy ion beams during the deposition of nanocrystalline layers. Once the metal deposition is complete, the temperature of the ceramic substrate reaches over 350°C.

[0042] In this invention, the ceramic substrate is preferably subjected to plasma cleaning before metal deposition is performed on it using a high-energy ion beam.

[0043] In this invention, the plasma cleaning beam current is preferably 0.4–2 A, more preferably 1–1.2 A. The plasma cleaning time is preferably 20–30 min, more preferably 25–28 min. The plasma cleaning is preferably performed using a 5–10 kW cold cathode Hall source. After cleaning under the above conditions, the surface roughness of the ceramic substrate is 0.1–0.5 μm, and the temperature of the ceramic substrate is not lower than 300°C, which allows the ceramic substrate to be directly used in the next step after plasma cleaning. In this invention, plasma cleaning can remove dirt from the surface of the ceramic substrate and form micro / nano structures on the ceramic surface, improving the surface energy and the bonding strength between the ceramic substrate and the ceramic / metal hybrid layer.

[0044] After forming a ceramic / metal hybrid layer on the surface of the ceramic matrix, the present invention injects a first low-energy ion beam into the surface of the ceramic / metal hybrid layer while simultaneously introducing a first acetylene gas, causing first carbonization to occur and forming a nanocrystalline layer, thereby obtaining a ceramic composite material precursor.

[0045] In this invention, the first low-energy ion beam is a transition metal in the transition metal carbide corresponding to the nanocrystalline layer; the volumetric flow rate of the first acetylene is less than 50 sccm, preferably 20-40 sccm. This invention ensures that metal ions carbonize without forming a carbon film by controlling the flow rate of the first acetylene gas.

[0046] In this invention, the energy of the first low-energy ion beam is preferably 200–550 eV, more preferably 300–400 eV; the beam current of the first low-energy ion beam is not higher than 500 mA, preferably 200–400 mA. This invention controls the energy and beam current of the ion beam and the thickness of the nanocrystalline layer to achieve a nanocrystalline size of less than 40 nm and a hardness of not less than 40 GPa. This invention controls the energy and beam current of the first low-energy ion beam during the preparation of the deposited nanocrystalline layer to achieve a ceramic substrate temperature ≥350℃, which is conducive to nanocrystalline growth. During the first carbonization process of this invention, acetylene reacts with metal ions in the first low-energy ion beam to generate metal carbides.

[0047] After obtaining the ceramic composite material precursor, the present invention introduces a second acetylene gas to cool the precursor. Once the temperature of the precursor drops to 60–100°C, a second low-energy ion beam is injected into the surface of the nanocrystalline layer while a third acetylene gas is continuously introduced, causing a second carbonization and forming an amorphous carbon film encapsulating the nanocrystalline layer, thus obtaining the ceramic composite material. In this invention, the negative pressure of the second low-energy ion beam is 60–100V, preferably 80–90V; the second low-energy ion beam is a transition metal in the transition metal carbide corresponding to the amorphous carbon film encapsulating the nanocrystalline layer. In this invention, the gas flow rate of the second acetylene is preferably 100–400 sccm, more preferably 150–300 sccm; the volumetric flow rate of the third acetylene is 500–1000 sccm, preferably 600–800 sccm. During the cooling process, by controlling the flow rate of the second acetylene gas, the second acetylene gas further combines with the nanocrystals in the nanocrystalline layer, promoting the formation of an amorphous carbon film and making it easier to form an amorphous carbon-encapsulated nanocrystalline structure. This invention controls the flow rate of the third acetylene gas and the temperature of the ceramic composite precursor, so that the third acetylene gas generates an amorphous carbon film during the second carbonization reaction, thus encapsulating the nanocrystals. If the cooling temperature exceeds the specified temperature, the nanocrystals will grow excessively, the amorphous carbon film encapsulation effect will deteriorate, and it will be difficult to achieve an amorphous carbon film encapsulating the nanocrystalline structure. Furthermore, excessively high temperatures will cause the proportion of sp2 bonds to exceed 70% of the total number of sp2 and sp3 bonds, which will cause the carbon film to tend to pulverize, ultimately making film formation difficult. In this invention, the energy of the second low-energy ion beam is preferably 100–300 eV, more preferably 150–250 eV, and the beam current is preferably no higher than 300 mA, more preferably 100–300 mA.

[0048] The present invention also provides the application of the ceramic composite material described in the above-described scheme or the ceramic composite material prepared by the preparation method described in the above-described scheme as a ceramic strip for printers.

[0049] To further illustrate the present invention, the ceramic composite materials, their preparation methods, and applications provided by the present invention are described in detail below with reference to the accompanying drawings and embodiments, but these descriptions should not be construed as limiting the scope of protection of the present invention.

[0050] Comparative Example 1

[0051] Plasma cleaning of the surface of the S01 long ceramic substrate:

[0052] The surface of the aluminum nitride ceramic substrate was treated using an 8KW cold cathode Hall source with a beam current of 0.9A and a treatment time of 30min. The roughness Ra of the treated ceramic substrate was 0.2μm. The surface temperature of the ceramic substrate after treatment was 300℃.

[0053] No ion beam deposition of a hybrid layer is performed on the surface of the S02 elongated ceramic substrate;

[0054] Ion beam deposition of nanocrystalline layers on the surface of S03 elongated ceramic strips:

[0055] A CrC nanocrystalline layer with a thickness of 50 nm was prepared by injecting a Cr ion beam onto the surface of a ceramic matrix using low-energy ion beam technology while simultaneously introducing a first acetylene gas with a volumetric flow rate of 40 sccm, thus obtaining a ceramic composite precursor. The energy of the first low-energy ion beam was 500 eV, the beam current was 400 mA, the size of the obtained CrC nanocrystals was 25–28 nm, and the hardness of the CrC nanocrystalline layer was 40 GPa.

[0056] Ion beam deposition of an amorphous encapsulation nanocrystalline structure layer on the surface of S04 elongated ceramic strips:

[0057] The ceramic composite precursor was cooled to 80°C by introducing a second acetylene gas at a volumetric flow rate of 150 sccm. A second low-energy Cr ion beam was then injected into the surface of the nanocrystalline layer while a third acetylene gas at a volumetric flow rate of 700 sccm was continuously introduced, causing carbonization and forming a 50 nm thick amorphous carbon film encapsulating the CrC nanocrystalline structure layer, thus obtaining the ceramic composite material. The second low-energy ion beam had a negative voltage of 100 V and a beam current of 0.3 A, and the amorphous carbon film contained 60% sp2 bonds (combining sp2 and sp3 bonds).

[0058] Comparative Example 2

[0059] Plasma cleaning of the surface of the S01 long ceramic substrate:

[0060] The surface of the aluminum nitride ceramic substrate was treated using an 8KW cold cathode Hall source with a beam current of 0.9A and a treatment time of 30min. The roughness Ra of the treated ceramic substrate was 0.2μm. The surface temperature of the ceramic substrate was 300℃ after the treatment.

[0061] Ion beam deposition of a hybrid layer on the surface of an S02 elongated ceramic substrate:

[0062] Ni was deposited on a ceramic substrate using a high-energy ion beam to form a 30 nm thick ceramic / metal hybrid layer on the substrate surface. The temperature of the ceramic substrate was 320 °C. The angle between the high-energy ion beam and the horizontal direction was 78°. The energy of the high-energy ion beam was 80 keV, the beam current was 8 mA, and the metal ion concentration in the metal layer was 7 × 10⁻⁶. 16 / cm 2 .

[0063] No nanocrystalline layer is deposited on the surface of S03 elongated ceramic strips using ion beam deposition.

[0064] Ion beam deposition of an amorphous encapsulation nanocrystalline structure layer on the surface of S04 elongated ceramic strips:

[0065] The ceramic composite precursor is cooled to 80°C by introducing a second acetylene gas at a volumetric flow rate of 150 sccm. A second low-energy Cr ion beam is deposited onto the surface of the metal layer while a third acetylene gas at a volumetric flow rate of 700 sccm is continuously introduced, causing carbonization and forming a 50 nm thick amorphous carbon film encapsulating the CrC nanocrystalline structure layer, thus obtaining the ceramic composite material. The second low-energy ion beam has a negative voltage of 100 V and a beam current of 0.3 A, and the amorphous carbon film contains 60% sp2 bonds (combining sp2 and sp3 bonds).

[0066] Example 1

[0067] Plasma cleaning of the surface of the S01 long ceramic substrate:

[0068] The surface of the aluminum nitride ceramic substrate was treated using an 8KW cold cathode Hall source with a beam current of 0.9A and a treatment time of 30min. The roughness Ra of the treated ceramic substrate was 0.2μm. The surface temperature of the ceramic substrate was 300℃ after the treatment.

[0069] Ion beam deposition of ceramic / metal hybrid layer on S02 elongated ceramic substrate surface:

[0070] Ni was deposited on a ceramic substrate at a surface temperature of 300℃ using a high-energy ion beam, forming a 30 nm thick ceramic / metal hybrid layer on the substrate surface. The high-energy ion beam was positioned at a 78° angle to the horizontal, with an energy of 80 keV and a beam current of 8 mA. The metal ion concentration within a 20 nm depth range was 7 × 10⁻⁶. 16 / cm 2 The ceramic substrate reached 320°C after the deposition of the ceramic / metal hybrid layer.

[0071] Ion beam deposition of nanocrystalline layers on the surface of S03 elongated ceramic strips:

[0072] Cr ion beams were injected into the surface of the metal layer using low-energy ion beam technology, while acetylene gas with a volumetric flow rate of 40 sccm was introduced to induce primary carbonization, preparing a CrC nanocrystalline layer with a thickness of 30 nm, thus obtaining a ceramic composite precursor. The energy of the first low-energy ion beam was 500 eV, and the beam current was 400 mA. The resulting CrC nanocrystals had a size of 25–28 nm, and the hardness of the CrC nanocrystalline layer was 40 GPa.

[0073] Ion beam deposition of an amorphous encapsulation nanocrystalline structure layer on the surface of S04 elongated ceramic strips:

[0074] The ceramic composite precursor is cooled to 80°C by introducing a second acetylene gas at a volumetric flow rate of 150 sccm. A second low-energy Cr ion beam is then injected into the surface of the metal layer while a third acetylene gas at a volumetric flow rate of 700 sccm is continuously introduced, causing a second carbonization process. This forms a 50 nm thick amorphous carbon film encapsulating the CrC nanocrystalline structure layer, resulting in the ceramic composite material. The second low-energy ion beam has a negative voltage of 100 V and a beam current of 0.3 A. The amorphous carbon film contains 60% sp2 bonds, representing 60% of the total number of sp2 and sp3 bonds.

[0075] Example 2

[0076] Plasma cleaning of the S01 long ceramic strip surface:

[0077] The surface of the aluminum nitride ceramic substrate was treated using an 8KW cold cathode Hall source with a beam current of 0.9A and a treatment time of 30min. The roughness Ra of the treated ceramic substrate was 0.2μm. The surface temperature of the ceramic substrate was 300℃ after the treatment.

[0078] Ion beam deposition of a hybrid layer on the surface of S02 elongated ceramic strips:

[0079] Ni was deposited on a ceramic substrate at a surface temperature of 300℃ using a high-energy Ni ion beam, forming a 50 nm thick ceramic / metal hybrid layer on the substrate surface. The high-energy ion beam was at an angle of 85° to the horizontal direction, with an energy of 90 keV and a beam current of 8 mA. The metal ion concentration within a 20 nm depth range was 6 × 10⁻⁶. 16 / cm 2 The ceramic substrate reached 325°C after the deposition of the ceramic / metal hybrid layer.

[0080] Ion beam deposition of nanocrystalline layers on the surface of S03 elongated ceramic strips:

[0081] Cr ion beams were injected into the surface of the metal layer using low-energy ion beam technology, while acetylene gas with a volumetric flow rate of 40 sccm was introduced to induce primary carbonization, preparing a CrC nanocrystalline layer with a thickness of 30 nm, thus obtaining a ceramic composite precursor. The energy of the first low-energy ion beam was 550 eV, and the beam current was 450 mA. The resulting CrC nanocrystals had a size of 27–31 nm, and the hardness of the CrC nanocrystalline layer was 43 GPa.

[0082] Ion beam deposition of an amorphous encapsulation nanocrystalline structure layer on the surface of S04 elongated ceramic strips:

[0083] The ceramic composite precursor is cooled to 80°C by introducing a second acetylene gas at a volumetric flow rate of 150 sccm. A second low-energy Cr ion beam is then injected into the surface of the metal layer while a third acetylene gas at a volumetric flow rate of 700 sccm is continuously introduced, causing a second carbonization process. This forms a 50 nm thick amorphous carbon film encapsulating the CrC nanocrystalline structure layer, resulting in the ceramic composite material. The second low-energy ion beam has a negative voltage of 100 V and a beam current of 0.3 A. The amorphous carbon film contains 60% sp2 bonds, representing 60% of the total number of sp2 and sp3 bonds.

[0084] The bonding strength between the layers of the ceramic composite materials in Examples 1-2 and Comparative Examples 1-2 was tested using the scratch test. The test results are shown in Table 1 and 2. Figure 1 As shown.

[0085] Table 1. Bond strength between layers of ceramic composite materials in Examples 1-2 and Comparative Examples 1-2.

[0086] Bond strength / N 5 8 15 18

[0087] From Table 1 and Figure 1 It can be seen that the bonding strength between the layers of the ceramic composite materials in Comparative Example 1 and Comparative Example 2 is less than 10N, while that of the present invention is greater than 15N. That is to say, both the ceramic / metal hybrid layer and the nanocrystalline layer are indispensable.

[0088] The ceramic composite materials of Examples 1-2 and Comparative Examples 1-2 were compared in terms of their temperature resistance by measuring the bond strength at 280°C using the scratch test. The test results are shown in Table 2. Figure 2 As shown.

[0089] Table 2. Experimental results of the temperature resistance of ceramic composite materials in Examples 1-2 and Comparative Examples 1-2.

[0090] Bond strength / N 1 2 11 17

[0091] From Table 2 and Figure 2 It can be seen that at a temperature of 280℃, the bonding strength between the layers of the ceramic composite materials in Comparative Examples 1 and 2 is less than 2N; while the bonding strength between the layers of the ceramic composite material of the present invention is greater than 10N. This indicates that both the ceramic / metal hybrid layer and the nanocrystalline layer are indispensable, and at the same time, the bonding strength between the layers of the ceramic composite material of the present invention does not decrease significantly at high temperatures, demonstrating excellent high-temperature resistance.

[0092] The hardness of the ceramic composite materials of Examples 1-2 and Comparative Examples 1-2 was measured (average value of 3 points tested with a Vickers hardness tester), and the test results are shown in Table 3 and... Figure 3 As shown.

[0093] Table 3 shows the hardness of the ceramic composite materials in Examples 1-2 and Comparative Examples 1-2.

[0094] Hardness / N 18 15 19 20

[0095] From Table 3 and Figure 3 It can be seen that the hardness of the ceramic composites in Comparative Examples 1 and 2 is lower than that in Examples 1 and 2. Furthermore, the hardness of the ceramic composite in Comparative Example 2 is higher than that of the ceramic composite in Comparative Example 1, indicating that the nanocrystalline layer has a significant impact on the overall hardness of the film.

[0096] The coefficient of friction of the ceramic composite materials in Examples 1-2 and Comparative Examples 1-2 was measured (the measurement method was: a stainless steel grinding ball with a diameter of 6.15 mm reciprocated 5 mm linear motion for 30 minutes under a load of 1 N). The test results are shown in Table 4. Figure 4 As shown.

[0097] Table 4. Friction coefficients of ceramic composite materials in Examples 1-2 and Comparative Examples 1-2

[0098] coefficient of friction 0.16 0.13 0.12 0.12

[0099] From Table 4 and Figure 4 It can be seen that the friction coefficients of the ceramic composites in Comparative Examples 1 and 2 are all higher than those in Examples 1 and 2. Furthermore, the friction coefficient of the ceramic composite in Comparative Example 1 is higher than that of the ceramic composite in Comparative Example 2, indicating that the bonding strength and the nanocrystalline layer have a significant impact on the overall friction coefficient of the film.

[0100] Although the above embodiments have provided a detailed description of the present invention, they are only some embodiments of the present invention, and not all embodiments. Other embodiments can be obtained based on these embodiments without creative effort, and these embodiments all fall within the protection scope of the present invention.

Claims

1. A ceramic composite material, characterized in that, It includes a ceramic substrate and a ceramic / metal hybrid layer, a nanocrystalline layer, and an amorphous carbon film-encapsulated nanocrystalline layer that are sequentially stacked on the ceramic substrate, wherein the ceramic substrate and the ceramic / metal hybrid layer are in contact; The thickness of the ceramic / metal hybrid layer is ≥20nm; The nanocrystalline layer and the nanocrystalline layer encapsulated by the amorphous carbon film are independently transition metal carbide nanocrystalline layers; The method for preparing the ceramic composite material includes the following steps: depositing metal onto a ceramic matrix using a high-energy ion beam to form a ceramic / metal hybrid on the surface of the ceramic matrix. The ceramic substrate has a temperature of not less than 300°C; the high-energy ion beam has an angle of 60° to 88° with the horizontal direction, and the energy of the high-energy ion beam is 40 to 100 keV. A first low-energy ion beam is deposited on the surface of the ceramic / metal hybrid layer while a first acetylene gas is introduced, resulting in first carbonization and the formation of a nanocrystalline layer, thus obtaining a ceramic composite material precursor. The first low-energy ion beam is a transition metal in the transition metal carbide corresponding to the nanocrystalline layer. The volumetric flow rate of the first acetylene gas is less than 50 sccm. The ceramic composite material precursor is cooled by introducing a second acetylene gas. After the temperature of the ceramic composite material precursor drops to 60~100℃, a second low-energy ion beam is deposited on the surface of the nanocrystalline layer while a third acetylene gas is continuously introduced, resulting in a second carbonization and the formation of an amorphous carbon film encapsulating the nanocrystalline layer to obtain the ceramic composite material. The negative pressure of the second low-energy ion beam is 60~100V. The second low-energy ion beam is a transition metal in the transition metal carbide corresponding to the amorphous carbon film encapsulating the nanocrystalline layer. The volumetric flow rate of the second acetylene gas is 150~400 sccm. The volumetric flow rate of the third acetylene gas is 500~1000 sccm.

2. The ceramic composite material according to claim 1, characterized in that, The amorphous carbon film encapsulating the nanocrystalline layer includes nanocrystals and an amorphous carbon film encapsulating the nanocrystals; the number of sp2 bonds in the amorphous carbon film accounts for 50-70% of the total number of sp2 and sp3 bonds.

3. The ceramic composite material according to claim 1, characterized in that, The nanocrystals in the nanocrystalline layer have a size of less than 40 nm.

4. The ceramic composite material according to claim 1, characterized in that, The metal in the ceramic / metal hybrid layer includes one of Ni, Fe, and Co; the transition metal carbide nanocrystals are one of CrC nanocrystals, TiC nanocrystals, ZrC nanocrystals, and CuC nanocrystals.

5. The ceramic composite material according to claim 1, characterized in that, The thickness of the nanocrystalline layer and the amorphous carbon film encapsulating the nanocrystalline layer are independently 20~50 nm.

6. The method for preparing the ceramic composite material according to any one of claims 1 to 5, characterized in that, Includes the following steps: Metal deposition is performed on a ceramic substrate using a high-energy ion beam to form a ceramic / metal hybrid on the surface of the ceramic substrate. The ceramic substrate has a temperature of not less than 300°C; the high-energy ion beam has an angle of 60° to 88° with the horizontal direction, and the energy of the high-energy ion beam is 40 to 100 keV. A first low-energy ion beam is deposited on the surface of the ceramic / metal hybrid layer while a first acetylene gas is introduced, resulting in first carbonization and the formation of a nanocrystalline layer, thus obtaining a ceramic composite material precursor. The first low-energy ion beam is a transition metal in the transition metal carbide corresponding to the nanocrystalline layer. The volumetric flow rate of the first acetylene gas is less than 50 sccm. The ceramic composite material precursor is cooled by introducing a second acetylene gas. After the temperature of the ceramic composite material precursor drops to 60~100℃, a second low-energy ion beam is deposited on the surface of the nanocrystalline layer while a third acetylene gas is continuously introduced, resulting in a second carbonization and the formation of an amorphous carbon film encapsulating the nanocrystalline layer to obtain the ceramic composite material. The negative pressure of the second low-energy ion beam is 60~100V. The second low-energy ion beam is a transition metal in the transition metal carbide corresponding to the amorphous carbon film encapsulating the nanocrystalline layer. The volumetric flow rate of the second acetylene gas is 150~400 sccm. The volumetric flow rate of the third acetylene gas is 500~1000 sccm.

7. The preparation method according to claim 6, characterized in that, The surface roughness of the ceramic matrix is ​​0.1~0.5μm.

8. The preparation method according to claim 6, characterized in that, The high-energy ion beam current is not less than 8mA.

9. The preparation method according to claim 6, characterized in that, The energy of the first low-energy ion beam is 200~550eV, and the beam current is no higher than 500mA.

10. The ceramic composite material according to any one of claims 1 to 5 or the ceramic composite material prepared by the preparation method according to any one of claims 6 to 9, as a ceramic strip for a printer.

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