A horizontal silicon carbide epitaxial furnace

Abstract

The present invention belongs to the technical field of horizontal carbonization furnaces, specifically a horizontal silicon carbide epitaxial furnace, comprising a single-layer quartz furnace chamber and sealing flanges symmetrically arranged on the central surfaces of both sides of the single-layer quartz furnace chamber, a slider movably overlapped on the outer surface of the sealing flange, a quartz tube movably sleeved on the slider, the sealing flange and the inner wall of the single-layer quartz furnace chamber, and a port full protection extrusion unit is fixedly installed on the outer surface of the slider. The present invention docks one end of the quartz tube to the inner wall of the sleeve, and at the same time cooperates with the limiting groove on the inner wall of the sleeve to limit the position of one end of the quartz tube, and at the same time cooperates with the fitting soft strip on the inner wall of the sleeve to increase the friction between the quartz tube surface and the fitting soft strip on the inner circle of the sleeve can effectively and evenly cover the surface of the quartz tube, thereby increasing the positional limitation between the quartz tube and the sleeve.

Description

Technical Field

[0001] The present invention belongs to the technical field of horizontal carbonization furnaces, and specifically relates to a horizontal silicon carbide epitaxial furnace. Background Art

[0002] An epitaxial furnace generally has a reaction chamber and a transfer chamber for loading and unloading the reaction chamber. The two are connected by a transfer valve and a flange. During the silicon carbide epitaxial reaction process, the reaction chamber generally operates in a high-temperature environment of about 1500 - 1700 °C, while the transfer chamber generally operates at room temperature. Each component in the transfer chamber does not have high-temperature resistance characteristics. Therefore, a flange and a transfer valve need to be provided between the reaction chamber and the transfer chamber to isolate the high temperature of the reaction chamber from being transferred to the transfer chamber. The flange is generally designed as a water-cooled flange to block the high temperature in the reaction chamber. However, in order to perform loading and unloading operations on the reaction chamber through the transfer chamber, a transfer port for loading and unloading needs to be designed on the flange. The transfer valve is connected to the transfer port and is used to change the connection state between the transfer port and the transfer chamber.

[0003] Currently, in the prior art, in an existing quartz chamber, since the inner cylinder and the outer cylinder of the chamber are integrally formed by high-temperature melting, according to the existing quartz processing technology, it is difficult to manufacture such an integral structure, and residual stress concentration is likely to occur at the melting joint of the inner and outer cylinders, resulting in cracks or sudden bursts during processing or epitaxial reaction due to temperature rise and fall. According to the prior art, three quartz water inlet pipes and three quartz water outlet pipes are directly melt-welded on the inner wall of the outer cylinder, which also makes the outer cylinder extremely prone to cracks. The quartz water pipes are directly clamped with external water pipes through connectors. If the clamping force is too large, the quartz water pipe orifice will also burst.

[0004] Therefore, the present invention provides a horizontal silicon carbide epitaxial furnace. Summary of the Invention

[0005] In order to make up for the deficiencies of the prior art and solve at least one of the technical problems proposed in the background art.

[0006] The technical solution adopted by the present invention to solve its technical problems is as follows: A horizontal silicon carbide epitaxial furnace described in the present invention includes a single-layer quartz furnace chamber 1 and sealing flanges symmetrically arranged on the central surfaces of both sides of the single-layer quartz furnace chamber 1, sliders movably lapped on the outer surfaces of the sealing flanges, a quartz tube movably sleeved on the outer surfaces of the sliders, the sealing flanges and the inner wall surface of the single-layer quartz furnace chamber 1, and a port full-protection extrusion unit fixedly installed on the outer surface of the slider. The port full-protection extrusion unit includes a positioning collar fixedly connected to the top surface of the slider, a sleeve detachably installed on the inner wall surface of the positioning collar, a push rod movably sleeved on the inner wall surface of the sleeve, a conical disc fixedly connected to one end of the push rod and movably sleeved on the inner wall surface of the sleeve, an expansion soft head fixedly connected to the inner wall surface of the sleeve and located at the middle position and wrapping the outer surface of the conical disc, a second fitting soft strip fixedly connected to the outer surface of the expansion soft head, a first fitting soft strip arranged on the inner wall surface of the sleeve, and a limiting groove arranged at the connection position between the expansion soft head and the sleeve.

[0007] Preferably, a horizontal positioning unit is fixedly installed on the outer surface of the sealing flange. The horizontal positioning unit includes a fixed table arm fixedly connected to one side surface of the single-layer quartz furnace chamber 1, limiting tracks fixedly connected to both side edge positions of the one side surface of the single-layer quartz furnace chamber 1 and located on both sides of the fixed table arm, a limiting sleeve fixedly connected to the top surface of the fixed table arm, a turntable movably sleeved at the docking position between the fixed table arm and the limiting sleeve, a threaded rod movably sleeved on the outer surface of the fixed table arm and arranged on the inner wall surface of the turntable, and a closing positioning cover fixedly connected to one end of the threaded rod. The outer surface of the first closing positioning cover is movably sleeved on the inner wall surface of the limiting sleeve, and a heightening silica gel strip is fixedly connected to the inner surfaces of the two closing positioning covers.

[0008] Preferably, furnace chamber mounting plates are arranged on both side surfaces of the single-layer quartz furnace chamber 1, and a single-layer quartz furnace chamber 2 wrapping the outer surface of the quartz tube is fixedly connected to the inner wall surface of the single-layer quartz furnace chamber 1 and located at the middle position.

[0009] Preferably, a limiting rod is fixedly connected to the inner wall surface of the single-layer quartz furnace chamber 1 and located at one side edge position of the single-layer quartz furnace chamber 2, and a sliding plate wrapping the outer surface of the single-layer quartz furnace chamber 2 is movably sleeved on the outer surface of the limiting rod.

[0010] Preferably, an induction heating power supply is arranged on the outer surface of the sliding plate, and a thermal field induction coil wrapping the outer surface of the single-layer quartz furnace chamber 2 is fixedly connected to one side surface of the induction heating power supply.

[0011] Preferably, a circulating water port is provided on the outer surface of the single-layer quartz furnace chamber 1, and a vacuum extraction port passing through the outer surface of the single-layer quartz furnace chamber 1 is fixedly connected to the outer surface of the single-layer quartz furnace chamber 2.

[0012] Preferably, the outer surface of the slider is movably sleeved on the inner wall surface of the limiting track.

[0013] Preferably, a clamping joint is fixedly connected to the outer surface of the two sets of closing and positioning covers, and a clamping lock is movably sleeved on the outer surface of the clamping joint.

[0014] Preferably, a threaded telescopic rod is provided on one side surface of the clamping lock, and an extrusion limiting groove is provided on the outer surface of the second closing and positioning cover.

[0015] Preferably, swing arms are symmetrically arranged on both side surfaces of the single-layer quartz furnace chamber 1, and a downward pressure positioning head that is movably lapped on the inner wall surface of the extrusion limiting groove is provided at one end of the swing arm.

[0016] The beneficial effects of the present invention are as follows:

[0017] 1. For the horizontal silicon carbide epitaxial furnace of the present invention, one end of the quartz tube is butted against the inner wall surface of the sleeve. At the same time, the position of one end of the quartz tube is limited by the limiting groove on the inner wall surface of the sleeve. Meanwhile, the first fitting soft strip on the inner wall surface of the sleeve is used to increase the friction force with the surface of the quartz tube. The first fitting soft strip on the inner layer of the inner circle of the sleeve can effectively and evenly cover the surface of the quartz tube, thereby increasing the position limitation between the quartz tube and the sleeve, so that the quartz tube will not sag and tilt due to the gravity at one end. Then, the push rod slides on the inner wall surface of the sleeve, and the conical disc at one end of the push rod slides on the inner wall surface of the expansion soft sleeve head, thereby expanding the surface of the expansion soft sleeve head outward, and then tightly fitting the second fitting soft strip on the outer surface of the expansion soft sleeve head against the inner wall surface of one end of the quartz tube. The expansion angle of the expansion soft sleeve head can effectively clamp and fix quartz tubes of different sizes, radii, and thicknesses;

[0018] 2. For a horizontal silicon carbide epitaxial furnace according to the present invention, one end of a quartz tube is butt-connected to the inner side wall surface of a sleeve, and the other end of the quartz tube is lapped on the top surface of a closed positioning cover. The raised silica gel strip on the inner side wall surface of the closed positioning cover is fitted to the surface of the quartz tube. Then, a portable level is held manually to preliminarily detect the horizontal angle of the quartz tube. If the horizontal angle of the quartz tube is offset, the turntable is rotated in the gap between the fixed table arm and the limit housing. Under the limitation of the limit housing, the threaded rod on the inner side wall surface of the turntable moves up and down, thereby performing a directional movement on the closed positioning cover on the inner side wall surface of the limit housing, so that the closed positioning cover can only move vertically up and down. Consequently, the quartz tube can only move vertically up and down, and will not have excessive offset when one end of the quartz tube moves, which may cause docking deviation of the quartz tube due to position offset when the angle of the quartz tube is adjusted by moving.

[0019] 3. For a horizontal silicon carbide epitaxial furnace according to the present invention, when the quartz tube is lapped on the top surface of the closed positioning cover, another closed positioning cover is closed and wrapped around the top surface of the quartz tube. As the two closed positioning covers continuously squeeze the surface of the quartz tube, and with the cooperation of the raised silica gel strip, the quartz tube is kept at the center position between the two closed positioning covers. Then, the clamping locks at both ends of the threaded telescopic rod are docked with the clamping heads on the outer surface of the closed positioning cover, and the surface of the threaded telescopic rod is rotated to tighten the clamping locks at both ends of the threaded telescopic rod towards the middle, thereby maintaining the stable state of the closed positioning cover and preventing the closed positioning cover from loosening and peeling off. Then, the turntable is rotated in the gap between the fixed table arm and the limit housing. Under the limitation of the limit housing, the threaded rod on the inner side wall surface of the turntable moves up and down, thereby performing a directional movement on the closed positioning cover on the inner side wall surface of the limit housing, so that the closed positioning cover can only move vertically up and down. Consequently, the quartz tube can only move vertically up and down, and will not have excessive offset when one end of the quartz tube moves. With the limitation of the sleeve and the closed positioning cover, the quartz tube can perform horizontal lateral movement no matter how it operates. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The present invention will be further described below with reference to the drawings.

[0021] Figure 1 is a three-dimensional view of the present invention;

[0022] Figure 2 is a three-dimensional structural schematic diagram of a single-layer quartz furnace chamber of the present invention;

[0023] Figure 3 is a sectional three-dimensional structural schematic diagram of a single-layer quartz furnace chamber of the present invention;

[0024] Figure 4 is a three-dimensional structure diagram of the side expansion of the single-layer quartz furnace chamber one and the sealing flange of the present invention;

[0025] Figure 5 is a three-dimensional sectional structure diagram of the sealing flange of the present invention;

[0026] Figure 6 is a three-dimensional structure diagram of the expansion of the sealing flange of the present invention;

[0027] Figure 7 is a three-dimensional sectional structure diagram of the sleeve of the present invention;

[0028] Figure 8 is a three-dimensional structure diagram of the expansion of the closed positioning cover of the present invention.

[0029] In the figure: 11, single-layer quartz furnace chamber one; 111, circulating water inlet; 112, furnace chamber mounting plate; 113, single-layer quartz furnace chamber two; 114, limiting rod; 115, sliding plate; 116, thermal field induction coil; 117, induction heating power supply; 118, vacuum pumping port; 12, sealing flange; 121, limiting track; 122, fixed table arm; 123, limiting sleeve; 124, threaded rod; 125, turntable; 126, closed positioning cover; 127, raised silica gel strip; 128, clamping joint; 129, threaded telescopic rod; 1210, clamping lock; 1211, extrusion limiting groove; 1212, swing arm; 1213, downward pressing positioning head; 13, quartz tube; 14, slider; 141, positioning collar; 142, sleeve; 143, fitting soft strip one; 144, push rod; 145, conical disc; 146, expanding soft sleeve head; 147, fitting soft strip two; 148, limiting groove. Detailed implementation manners

[0030] In order to make the technical means, creative features, achieved purposes and functions of the present invention easy to understand, the present invention will be further described below in conjunction with specific implementation manners.

[0031] Such as Figures 1 to 8As shown in the figure, a horizontal silicon carbide epitaxial furnace according to an embodiment of the present invention includes a single-layer quartz furnace chamber 11 and sealing flanges 12 symmetrically arranged on the central surfaces of both sides of the single-layer quartz furnace chamber 11. A slider 14 is movably lapped on the outer surface of the sealing flange 12. A quartz tube 13 is movably sleeved on the outer surface of the slider 14, the sealing flange 12 and the inner wall surface of the single-layer quartz furnace chamber 11. A port full-protection extrusion unit is fixedly installed on the outer surface of the slider 14. The port full-protection extrusion unit includes a positioning collar 141 fixedly connected to the top surface of the slider 14. A sleeve 142 is detachably installed on the inner wall surface of the positioning collar 141. A push rod 144 is movably sleeved on the inner wall surface of the sleeve 142. One end of the push rod 144 is fixedly connected to a conical disk 145 movably sleeved on the inner wall surface of the sleeve 142. An expansion soft head 146 that wraps the outer surface of the conical disk 145 is fixedly connected to the inner wall surface of the sleeve 142 and at the middle position. A second fitting soft strip 147 is fixedly connected to the outer surface of the expansion soft head 146. A first fitting soft strip 143 is arranged on the inner wall surface of the sleeve 142. A limiting groove 148 is arranged at the connection position between the expansion soft head 146 and the sleeve 142;

[0032] A horizontal positioning unit is fixedly installed on the outer surface of the sealing flange 12. The horizontal positioning unit includes a fixed table arm 122 fixedly connected to one side surface of the single-layer quartz furnace chamber 11. Limiting tracks 121 are fixedly connected to both side edge positions of one side surface of the single-layer quartz furnace chamber 11 and on both sides of the fixed table arm 122. A limiting housing 123 is fixedly connected to the top surface of the fixed table arm 122. A turntable 125 is movably sleeved at the docking position between the fixed table arm 122 and the limiting housing 123. A threaded rod 124 arranged on the inner wall surface of the turntable 125 is movably sleeved on the outer surface of the fixed table arm 122. One end of the threaded rod 124 is fixedly connected to a closing positioning cover 126. The outer surface of the first closing positioning cover 126 is movably sleeved on the inner wall surface of the limiting housing 123. A heightening silica gel strip 127 is fixedly connected to the inner surfaces of the two groups of closing positioning covers 126.

[0033] When the port full-protection extrusion unit and the horizontal positioning unit provided by the present invention are in use, one end of the quartz tube 13 is docked to the inner side wall surface of the sleeve 142. At the same time, the position of one end of the quartz tube 13 is limited by the limiting groove 148 on the inner side wall surface of the sleeve 142. At the same time, the first fitting soft strip 143 on the inner side wall surface of the sleeve 142 is used to increase the friction force with the surface of the quartz tube 13. The first fitting soft strip 143 on the inner layer of the inner ring of the sleeve 142 can effectively and evenly cover the surface of the quartz tube 13, thereby increasing the position limitation between the quartz tube 13 and the sleeve 142, so that the quartz tube 13 will not sag and tilt due to the gravity of one end. Then, the push rod 144 slides on the inner side wall surface of the sleeve 142, and the conical disc 145 at one end of the push rod 144 slides on the inner side wall surface of the expansion soft sleeve head 146, so as to expand the surface of the expansion soft sleeve head 146 outward, and then the second fitting soft strip 147 on the outer surface of the expansion soft sleeve head 146 is closely attached to the inner side wall surface of one end of the quartz tube 13. The expansion angle of the expansion soft sleeve head 146 can effectively clamp and fix quartz tubes 13 with different sizes, radii, and thicknesses, avoiding the problem that when the traditional locking device clamps and fixes the quartz tube 13, the material on the surface of the locking device is too hard, so that when the quartz tube 13 is clamped, excessive extrusion will be caused at the corner position of the surface of one end of the quartz tube 13, resulting in cracks or fractures at the corner position of the quartz tube 13;

[0034] One end of the quartz tube 13 is butt - jointed to the inner wall surface of the sleeve 142, and the other end of the quartz tube 13 is lapped on the top surface of the closed positioning cover 126. The silica gel strip 127 on the inner wall surface of the closed positioning cover 126 is fitted to the surface of the quartz tube 13. Then, a portable level is held manually to preliminarily detect the horizontal angle of the quartz tube 13. If the horizontal angle of the quartz tube 13 is offset, the turntable 125 is rotated in the gap between the fixed table arm 122 and the limit sleeve 123. Under the limitation of the limit sleeve 123, the threaded rod 124 on the inner wall surface of the turntable 125 moves up and down, thereby moving the closed positioning cover 126 on the inner wall surface of the limit sleeve 123 directionally, so that the closed positioning cover 126 can only move vertically up and down. Thus, the quartz tube 13 can only move vertically up and down, and there will be no excessive offset when one end of the quartz tube 13 moves, which may cause a docking deviation of the quartz tube 13 when adjusting the angle by moving. After the quartz tube 13 is adjusted to the horizontal angle, the slider 14 is used to push one end of the quartz tube 13, and one end of the quartz tube 13 is moved into the interior of the single - layer quartz furnace chamber 11, so that the two quartz tubes 13 are docked. Then, the docking part of the quartz tube 13 is heated electromagnetically by the thermal field, so that the docking part of the quartz tube 13 melts and the docking of the quartz tube 13 is squeezed and fixed together.

[0035] Further, as Figure 4 - Figure 6 and Figure 8 shown, the outer surface of the slider 14 is movably sleeved on the inner wall surface of the limit track 121. The outer surfaces of the two groups of closed positioning covers 126 are fixedly connected with clamping joints 128. The outer surface of the clamping joint 128 is movably sleeved with a clamping lock 1210. One side surface of the clamping lock 1210 is provided with a threaded telescopic rod 129. The outer surface of the second closed positioning cover 126 is provided with an extrusion limit groove 1211. The two side surfaces of the single - layer quartz furnace chamber 11 are symmetrically provided with swing arms 1212. One end of the swing arm 1212 is provided with a downward - pressing positioning head 1213 that is movably lapped on the inner wall surface of the extrusion limit groove 1211.

[0036] When the closing positioning cover 126, the clamping joint 128, the clamping lock 1210, and the threaded telescopic rod 129 provided by the present invention are in use, when the quartz tube 13 is lapped on the top surface of the closing positioning cover 126, another closing positioning cover 126 is closed and wrapped around the top surface of the quartz tube 13. As the two closing positioning covers 126 continuously squeeze the surface of the quartz tube 13, and cooperate with the raised silica gel strip 127 to keep the quartz tube 13 at the central position of the two closing positioning covers 126. Then, the clamping locks 1210 at both ends of the threaded telescopic rod 129 are docked with the clamping joints 128 on the outer surface of the closing positioning cover 126. By rotating the surface of the threaded telescopic rod 129, the clamping locks 1210 at both ends of the threaded telescopic rod 129 are tightened towards the middle, thereby maintaining the stable state of the closing positioning cover 126 and preventing the closing positioning cover 126 from loosening and peeling off. Then, cooperate with the turntable 125 to rotate in the gap between the fixed table arm 122 and the limit sleeve 123. Under the limitation of the limit sleeve 123, the threaded rod 124 on the inner side wall surface of the turntable 125 moves up and down, thereby moving the closing positioning cover 126 on the inner side wall surface of the limit sleeve 123 in a directional manner, so that the closing positioning cover 126 can only move vertically up and down, and thus the quartz tube 13 can only move vertically up and down, without excessive deviation when one end of the quartz tube 13 is moving. Then, under the limitation of the sleeve 142 and the closing positioning cover 126, the quartz tube 13 can achieve the effect of horizontal lateral movement no matter how it operates.

[0037] Further, as Figure 1 - Figure 3 shown, furnace chamber mounting plates 112 are provided on both side surfaces of the single-layer quartz furnace chamber 11. A single-layer quartz furnace chamber 113 that wraps around the outer surface of the quartz tube 13 is fixedly connected to the inner side wall surface of the single-layer quartz furnace chamber 11 and is located at the middle position. A limiting rod 114 is fixedly connected to the inner side wall surface of the single-layer quartz furnace chamber 11 and is located at one side edge position of the single-layer quartz furnace chamber 113. A sliding plate 115 that wraps around the outer surface of the single-layer quartz furnace chamber 113 is movably sleeved on the outer surface of the limiting rod 114. An induction heating power supply 117 is provided on the outer surface of the sliding plate 115. A thermal field induction coil 116 that wraps around the outer surface of the single-layer quartz furnace chamber 113 is fixedly connected to one side surface of the induction heating power supply 117. A circulating water port 111 is provided on the outer surface of the single-layer quartz furnace chamber 11. A vacuum extraction port 118 that passes through the outer surface of the single-layer quartz furnace chamber 11 is fixedly connected to the outer surface of the single-layer quartz furnace chamber 113.

[0038] When the single-layer quartz furnace chamber 11, the circulating water inlet 111, the single-layer quartz furnace chamber 113, the thermal field induction coil 116, and the induction heating power supply 117 provided by the present invention are in use, when the two quartz tubes 13 move into the single-layer quartz furnace chamber 113, the circulating water inlet 111 is used to circulate and infuse cooling water into the single-layer quartz furnace chamber 11, so that the inside of the single-layer quartz furnace chamber 11 always remains in a low-temperature state. Then, the inside of the single-layer quartz furnace chamber 113 is evacuated through the vacuum extraction port 118, so that the inside of the single-layer quartz furnace chamber 113 is in a semi-vacuum state. Then, high-temperature heating is carried out through the thermal field induction coil 116 and the induction heating power supply 117, so that the butt joint of the quartz tube 13 begins to melt and gradually adheres together as the quartz tube 13 continues to melt. When the quartz tube 13 is melted and butt-jointed, the flow of oxygen inside will generate air flow, and too large an air flow will cause defects such as cracks and pores at the butt joint of the quartz tube 13, and even welding points will appear at the butt joint. Evacuating oxygen can effectively reduce the air flow, thereby affecting the appearance of defects at the butt joint of the quartz tube 13.

[0039] The working principle provided by the present invention: One end of the quartz tube 13 is butted against the inner side wall surface of the sleeve 142. At the same time, the position of one end of the quartz tube 13 is limited by the limiting groove 148 on the inner side wall surface of the sleeve 142. At the same time, the first fitting soft strip 143 on the inner side wall surface of the sleeve 142 is used to increase the friction force with the surface of the quartz tube 13. The first fitting soft strip 143 on the inner layer of the inner ring of the sleeve 142 can effectively and evenly cover the surface of the quartz tube 13, thereby increasing the limitation of the position between the quartz tube 13 and the sleeve 142, so that the quartz tube 13 will not drop and tilt due to the gravity of one end. Then, the push rod 144 slides on the inner side wall surface of the sleeve 142, and the conical disk 145 at one end of the push rod 144 slides on the inner side wall surface of the expansion soft sleeve head 146, so as to expand the surface of the expansion soft sleeve head 146 outward, and then the second fitting soft strip 147 on the outer surface of the expansion soft sleeve head 146 is tightly attached to the inner side wall surface of one end of the quartz tube 13. The expansion angle of the expansion soft sleeve head 146 can effectively clamp and fix quartz tubes 13 with different sizes, radii, and thicknesses, and the utilization effect avoids that when the traditional locking device clamps and fixes the quartz tube 13, due to the too hard material on the surface of the locking device, when the quartz tube 13 is clamped, it will cause excessive extrusion at the corner position of the surface of one end of the quartz tube 13, resulting in cracking or cracking at the corner position of the quartz tube 13;

[0040] One end of the quartz tube 13 is butt-jointed to the inner wall surface of the sleeve 142, and the other end of the quartz tube 13 is lapped on the top surface of the closing positioning cover 126. The silica gel strip 127 on the inner wall surface of the closing positioning cover 126 is fitted to be in contact with the surface of the quartz tube 13. Then, a portable level is held manually to preliminarily detect the horizontal angle of the quartz tube 13. If the horizontal angle of the quartz tube 13 is offset, the turntable 125 is rotated in the gap between the fixed table arm 122 and the limit sleeve 123. Under the limitation of the limit sleeve 123, the threaded rod 124 on the inner wall surface of the turntable 125 moves up and down, and then the closing positioning cover 126 on the inner wall surface of the limit sleeve 123 is moved directionally, so that the closing positioning cover 126 can only move vertically up and down. Then, the quartz tube 13 can only move vertically up and down, and there will be no excessive offset when one end of the quartz tube 13 moves, which will cause the quartz tube 13 to have a docking deviation when adjusting the angle by moving. After the quartz tube 13 is adjusted to the horizontal angle, the slider 14 is used to push one end of the quartz tube 13, and one end of the quartz tube 13 is moved into the single-layer quartz furnace chamber 11, so that the two quartz tubes 13 are docked. Then, the docking part of the quartz tube 13 is heated electromagnetically by the thermal field, so that the docking part of the quartz tube 13 melts and the docking of the quartz tube 13 is extruded and fixed together;

[0041] When the two quartz tubes 13 are moved into the single-layer quartz furnace chamber 113, the circulating water inlet 111 is used to circulate and pour cooling water into the single-layer quartz furnace chamber 11, so that the inside of the single-layer quartz furnace chamber 11 always remains in a low-temperature state. Then, the vacuum suction port 118 is used to suck air from the inside of the single-layer quartz furnace chamber 113, so that the inside of the single-layer quartz furnace chamber 113 is in a semi-vacuum state. Then, high-temperature heating is carried out by the thermal field induction coil 116 and the induction heating power supply 117, so that the docking part of the quartz tube 13 begins to melt, and gradually adheres together as the quartz tube 13 continues to melt. To avoid the internal oxygen flow generating air flow during the melting and docking of the quartz tube 13, and too large an air flow will cause defects such as cracks and pores at the docking part of the quartz tube 13, and even cause welding points at the docking part. Evacuating oxygen can effectively reduce the air flow, and thus affect the appearance of defects at the docking part of the quartz tube 13.

[0042] The foregoing has shown and described the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited by the above embodiments, and what is described in the above embodiments and the specification is only to illustrate the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention will have various changes and improvements, and these changes and improvements fall within the scope of the present invention claimed. The scope of the present invention claimed is defined by the appended claims and their equivalents.

Claims

1. A horizontal silicon carbide epitaxial furnace, comprising a single-layer quartz furnace chamber (11) and sealing flanges (12) symmetrically arranged on the central surfaces of both sides of the single-layer quartz furnace chamber (11), a slider (14) movably overlapped on the outer surface of the sealing flange (12), and a quartz tube (13) movably sleeved on the slider (14), the sealing flange (12) and the inner wall surface of the single-layer quartz furnace chamber (11), characterized in that: A port full protection extrusion unit is fixedly mounted on the outer surface of the slider (14), and the port full protection extrusion unit comprises a positioning ring (141) fixedly connected to the top surface of the slider (14), a sleeve (142) is detachably mounted on the inner wall of the positioning ring (141), a push rod (144) is movably sleeved on the inner wall of the sleeve (142), and one end of the push rod (144) is fixedly connected to a sleeve movably sleeved on the inner wall of the sleeve (142). The conical disk (145) is provided on the inner wall surface of the sleeve (142), and an expansion soft sleeve (146) wrapped around the outer surface of the conical disk (145) is fixedly connected to the inner wall surface of the sleeve (142) and located in the middle position, and a second fitting soft strip (147) is fixedly connected to the outer surface of the expansion soft sleeve (146), and a first fitting soft strip (143) is provided on the inner wall surface of the sleeve (142), and a limiting groove (148) is provided at the connection position between the expansion soft sleeve (146) and the sleeve (142); A horizontal positioning unit is fixedly mounted on the outer surface of the sealing flange (12), and the horizontal positioning unit comprises a fixed platform arm (122) fixedly connected to a side surface of the single-layer quartz furnace chamber (11), a limiting track (121) is fixedly connected to a side surface of the single-layer quartz furnace chamber (11) and located at two side edge positions of the fixed platform arm (122), a limiting sleeve (123) is fixedly connected to the top surface of the fixed platform arm (122), a turntable (125) is movably sleeved at the joint between the fixed platform arm (122) and the limiting sleeve (123), and a threaded rod (121) arranged on the inner wall surface of the turntable (125) is movably sleeved on the outer surface of the fixed platform arm (122). 24) A closed positioning cover (126) is fixedly connected to one end of the threaded rod (124); the outer surface of the No. 1 closed positioning cover (126) is movably sleeved on the inner wall of the limiting sleeve (123); a raised silicone strip (127) is fixedly connected to the inner surfaces of the two groups of closed positioning covers (126); a clamping joint (128) is fixedly connected to the outer surfaces of the two groups of closed positioning covers (126); a clamping lock (1210) is movably sleeved on the outer surface of the clamping joint (128); a threaded telescopic rod (129) is provided on one side surface of the clamping lock (1210); and an extrusion limiting groove (1211) is provided on the outer surface of the No. 2 closed positioning cover (126).

2. A horizontal silicon carbide epitaxial furnace according to claim 1, characterized in that: Furnace chamber mounting plates (112) are provided on both side surfaces of the single-layer quartz furnace chamber one (11), and a single-layer quartz furnace chamber two (113) wrapped around the outer surface of the quartz tube (13) is fixedly connected to the inner wall surface of the single-layer quartz furnace chamber one (11) and located in the middle.

3. A horizontal silicon carbide epitaxial furnace according to claim 2, characterized in that: A limiting rod (114) is fixedly connected to the inner wall surface of the single-layer quartz furnace chamber one (11) and located at an edge position on one side of the single-layer quartz furnace chamber two (113); a sliding plate (115) wrapped around the outer surface of the single-layer quartz furnace chamber two (113) is movably sleeved on the outer surface of the limiting rod (114).

4. The horizontal silicon carbide epitaxial furnace according to claim 3, characterized in that: An induction heating power source (117) is provided on the outer surface of the slide plate (115), and a thermal field induction coil (116) wrapped around the outer surface of the second single-layer quartz furnace chamber (113) is fixedly connected to one side surface of the induction heating power source (117).

5. The horizontal silicon carbide epitaxial furnace according to claim 2, characterized in that: A circulating water inlet (111) is provided on the outer surface of the single-layer quartz furnace chamber one (11), and a vacuum extraction port (118) passing through the outer surface of the single-layer quartz furnace chamber one (11) is fixedly connected to the outer surface of the single-layer quartz furnace chamber two (113).

6. The horizontal silicon carbide epitaxial furnace according to claim 1, characterized in that: The outer surface of the sliding block (14) is movably sleeved on the inner wall surface of the limiting track (121).

7. The horizontal silicon carbide epitaxial furnace according to claim 1, characterized in that: The surfaces of both sides of the single-layer quartz furnace chamber (11) are symmetrically provided with swing arms (1212), and one end of the swing arm (1212) is provided with a downward pressing positioning head (1213) movably overlapped on the inner wall surface of the extrusion limiting groove (1211).

Images